CN102456793A - Light-emitting diode component and manufacturing method for same - Google Patents
Light-emitting diode component and manufacturing method for same Download PDFInfo
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- CN102456793A CN102456793A CN2010105268422A CN201010526842A CN102456793A CN 102456793 A CN102456793 A CN 102456793A CN 2010105268422 A CN2010105268422 A CN 2010105268422A CN 201010526842 A CN201010526842 A CN 201010526842A CN 102456793 A CN102456793 A CN 102456793A
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Abstract
The invention discloses a light-emitting diode component and a manufacturing method for the same. The light-emitting diode component comprises a substrate, an epitaxial layer, a first electrode and a second electrode. The epitaxial layer is disposed on the substrate, the first electrode is disposed on the epitaxial layer and provided with a first conductive branch, the second electrode is disposed on the epitaxial layer, and the first conductive branch of the second electrode is disposed with the first conductive branch of the first electrode in an overlapping manner. The conductive branch of the first electrode is disposed with the first conductive branch of the second electrode in an overlapping manner, so that the light-emitting area can be efficiently increased, the light absorption probability of the electrodes can be decreased, and a capacitive adsorption stored charge can be formed to enhance the antistatic capacity of the component.
Description
Technical field
The present invention relates to a kind of light-emitting diode and manufacturing approach thereof.
Background technology
(light-emitting diode LED) is a kind of light-emitting component that is formed by semi-conducting material manufacturing to light-emitting diode.Because light-emitting diode belongs to chemiluminescence; Have advantages such as power consumption is low, component life is long, reaction speed is fast; Add the little characteristic of processing minimum or arrayed elements easily of volume; Therefore in recent years along with technology is constantly progressive, its range of application has contained the indicator light of computer or household appliances, backlight and even the traffic signals or the automobile-used indicator light of liquid crystal indicator.
Fig. 1 is a kind of vertical view of known light-emitting diode 1, and Fig. 2 is the generalized section of the light-emitting diode 1 of Fig. 1 along the AA line segment.Light-emitting diode 1 comprises substrate 11, n type semiconductor layer 12, multiple quantum trap layer 13, p type semiconductor layer 14, light transmission conductive layer 15, first electrode 16 and second electrode 17.Wherein, First electrode 16 has conductive pad 161 and conductive branches 162; Second electrode 17 has conductive pad 171 and two conductive branches 172; Conductive pad 161,171 usefulness lead-in wire is to receive drive signal, and conductive branches 162,172 is arranged at respectively on n type semiconductor layer 12 and the light transmission conductive layer 15, emits beam to make light-emitting diode 1 through drive signal.
Wherein, the conductive branches 162 of first electrode 16 and the conductive branches 172 of second electrode 17 are arranged at diverse location in vertical direction, promptly shift to install.Yet this kind electrode configuration mode not only reduces the light-emitting area of element, and in addition, the metal electrode of increase also can cause light absorption, causes the luminous power of light-emitting diode 1 to reduce.
Therefore, how a kind of light-emitting diode with brand-new electrode configuration is provided, and can increases light-emitting area and reduce electrode extinction probability, become one of important topic.
Summary of the invention
Because above-mentioned problem, one of the object of the invention can increase light-emitting area and reduce electrode extinction probability for a kind of light-emitting diode with brand-new electrode configuration is provided, and then the luminous power of lift elements.
For reaching above-mentioned purpose, comprise substrate, epitaxial loayer, first electrode and second electrode according to a kind of light-emitting diode of the present invention.Epitaxial loayer is arranged on the substrate, and first electrode is arranged at epitaxial loayer, and second electrode is arranged on the epitaxial loayer, and the overlapping setting of first conductive branches of first conductive branches of second electrode and first electrode.
In an embodiment, first conductive branches of first electrode and first conductive branches of second electrode are strip, and conductive branches is in order to evenly to spread electric current.
In an embodiment; First electrode can also have connecting portion and be connected with first conductive branches of first electrode; Second electrode also can have connecting portion and be connected with first conductive branches of second electrode; The not overlapping setting of these connecting portions, and can be cushion, for example be the conductive pad (conductive pad) of lead-in wire usefulness.
In an embodiment, first conductive branches of first electrode is positioned at the groove of epitaxial loayer, and can be covered by the reflector.Through the light emitting path of the adjustable optical diode of haircuting in reflector, and further avoid electrode to absorb light and be lifted out optical efficiency.
In an embodiment, epitaxial loayer has first semiconductor layer, second semiconductor layer and multiple quantum trap layer, and the multiple quantum trap layer is between first semiconductor layer and second semiconductor layer, and first electrode is positioned at the surface of the groove of second semiconductor layer.
In an embodiment, insulating barrier is between first conductive branches of first conductive branches of first electrode and second electrode.Through the setting of insulating barrier, first conductive branches of first electrode and first conductive branches of second electrode form shunt capacitance.Electric capacity can absorb store charge and increase the light-emitting diode antistatic effect.
In an embodiment; First electrode also has second conductive branches; Second electrode also has second conductive branches; The overlapping setting of these second conductive branches, and the second conductive branches portion of first conductive branches of first electrode and first electrode can laterally arrange, and first conductive branches of second electrode and second conductive branches of second electrode can laterally arrange.The overlapping setting of these first conductive branches through first electrode and second electrode; And the overlapping setting of these second conductive branches of first electrode and second electrode; Can increase overlapping area, and reduce electrode extinction probability, and increase capacitance and promote antistatic effect.
For reaching above-mentioned purpose, the manufacturing approach of foundation a kind of light-emitting diode of the present invention is contained in and forms epitaxial loayer on the substrate; Form first conductive branches of first electrode in epitaxial loayer; And first conductive branches that on epitaxial loayer, forms second electrode, make first conductive branches of second electrode and the overlapping setting of first conductive branches of first electrode.
In an embodiment, manufacturing approach also comprises first conductive branches that the formation reflector covers first electrode.Through the light emitting path of the adjustable optical diode of haircuting in reflector, and further avoid electrode to absorb light and be lifted out optical efficiency.
In an embodiment, manufacturing approach also comprises and forms insulating barrier between first conductive branches of first conductive branches of first electrode and second electrode.But insulating barrier for example filling in groove.Can make first conductive branches of the electrode of winning and first conductive branches of second electrode form electric capacity through insulating barrier, electric capacity can absorb store charge and increase the light-emitting diode antistatic effect.
In an embodiment, manufacturing approach also comprises second conductive branches that forms first electrode; And second conductive branches that forms second electrode, and make second conductive branches of first electrode and the overlapping setting of second conductive branches of second electrode.Through the overlapping setting of first conductive branches of first electrode and second electrode, and the overlapping setting of second conductive branches of first electrode and second electrode, can increase overlapping area, and reduce electrode extinction probability, and increase capacitance and promote antistatic effect.
Hold the above; Light-emitting diode of the present invention and manufacturing approach thereof are the overlapping settings of first conductive branches through first conductive branches of first electrode and second electrode; Can reduce the shared area of electrode and effectively increase light-emitting area with activation; Reduce electrode extinction probability, and the electrode of overlapping setting can form electric capacity and increase the element antistatic effect to absorb store charge, but the so luminous power and the element efficiency of lift elements.
Description of drawings
Fig. 1 is a kind of vertical view of known light-emitting diode;
Fig. 2 is the generalized section of the light-emitting diode of Fig. 1 along the AA line segment;
Fig. 3 is the schematic top plan view of a kind of light-emitting diode of the preferred embodiment of the present invention;
Fig. 4 is the generalized section of the light-emitting diode of Fig. 3 along the AA line segment;
Fig. 5 is the process step figure of a kind of light-emitting diode manufacturing approach of the preferred embodiment of the present invention; And
Fig. 6 A to Fig. 6 D is the schematic flow sheet of a kind of light-emitting diode manufacturing approach of the preferred embodiment of the present invention.
Description of reference numerals
1,2: light-emitting diode
11,21: substrate
The 12:N type semiconductor layer
13,223: the multiple quantum trap layer
The 14:P type semiconductor layer
15,28: light transmission conductive layer
16,23: the first electrodes
161: conductive pad
162: conductive branches
17,24: the second electrodes
171: conductive pad
172: conductive branches
22: epitaxial loayer
221: the first semiconductor layers
222: the second semiconductor layers
231,241: the first conductive branches
232,242: connecting portion
233,243: the second conductive branches
25: groove
26: the reflector
27: insulating barrier
S01～S03: step of manufacturing
Embodiment
Below will a kind of light-emitting diode and manufacturing approach thereof according to the preferred embodiment of the present invention be described with reference to relevant drawings, wherein components identical will be explained with identical reference marks.
Fig. 3 is the schematic top plan view of a kind of light-emitting diode 2 of the preferred embodiment of the present invention, and Fig. 4 is the generalized section of the light-emitting diode 2 of Fig. 3 along the AA line segment.Please with reference to Fig. 3 and shown in Figure 4, light-emitting diode 2 comprises substrate 21, epitaxial loayer 22, first electrode 23 and second electrode 24.
The material of substrate 21 can for example comprise sapphire (sapphire), carborundum (SiC), gallium phosphide (GaP) or silicon (Si), is example with the sapphire at this.
And in order to electrically conduct second semiconductor layer 222; First semiconductor layer 221 for example utilizes with the part in the multiple quantum trap layer 223, and the photoengraving carving technology removes; Second semiconductor layer, 222 surfaces in order to exposed portions serve; First electrode 23 is arranged on the surface that second semiconductor layer 222 exposed; First electrode 23 includes first conductive branches 231, second conductive branches 233 and connecting portion 232, and wherein first conductive branches 231 and second conductive branches 233 for example are the conductive branches of strip, in order to electric current is evenly spread; And connecting portion 232 is connected to form conductive path with first conductive branches 231 and second conductive branches 233 respectively, and this connecting portion 232 for example is the conductive pad (conductive pad) of lead-in wire usefulness.
Light-emitting diode 2 can also comprise light transmission conductive layer (transparent conductive layer, TCL) 28, it is arranged on the epitaxial loayer 22, in order to electric current is evenly spread the back through first semiconductor layer 221, then again through multiple quantum trap layer 223.The light transmission conductive layer 28 of present embodiment can for example be tin indium oxide (ITO).
As shown in Figure 4; In the present embodiment; First conductive branches 231 of first electrode 23 and second conductive branches 233 are positioned at the groove 25 that epitaxial loayer 22 is removed part; And can cover by reflector 26, reflector 26 can partly cover first conductive branches 231 and second conductive branches 233 or cover first conductive branches 231 fully and second conductive branches 233.Through the light emitting path of the reflector 26 adjustable optical diode elements 2 of haircuting, and further avoid electrode 23,24 to absorb light and be lifted out optical efficiency.Reflector 26 can be the rete of reflective metals formation or is made up of catoptric arrangement, wherein also can add transparent dielectric material.For example reflector 26 can comprise metallic reflective material aluminium, silver or platinum or its alloy or reflector 26 and can be Bragg reflection structure (DBR), and can comprise titanium dioxide (TiO
2), silicon dioxide (SiO
2) or silicon nitride (SiN) or reflector 26 can form by metallic aluminium, silver or platinum and transparent dielectric material titanium dioxide, silicon dioxide or silicon nitride.
In addition; In the present embodiment; Insulating barrier 27 is between first conductive branches 241 of first conductive branches 231 of first electrode 23 and second electrode 24; In groove 25, and first conductive branches 241 of second electrode 24 and second conductive branches 243 are arranged on this insulating barrier 27 in these insulating barrier 27 fillings, and first conductive branches, the 241 overlapping settings of first conductive branches 231 of first electrode 23 and second electrode 24; Second conductive branches 232 of this first electrode 23 and second conductive branches, the 242 overlapping settings of this second electrode 24, and the lap of this two electrode is to be electrically insulated with insulating barrier 27 to separate.In addition, in other embodiments, insulating barrier 27 is first semiconductor layer 221 of extensible cover part also.Setting through insulating barrier 27; First conductive branches 241 of first conductive branches 231 of first electrode 23 and second electrode 24 forms shunt capacitance; Second conductive branches 242 of second conductive branches 232 of first electrode 23 and second electrode 24 forms shunt capacitances, and electric capacity can absorb store charge and increase the antistatic effect of light-emitting diode 2.And the insulating barrier here 27 also is equivalent to the effect of electric current barrier layer; Can avoid directly directly circulation between the conductive branches of first electrode 23 and second electrode 24 of electric current through being provided with of insulating barrier 27; Can let electric current spread more uniformly, increase light-emitting area, improve luminous efficiency.
The insulating barrier 27 of present embodiment is the printing opacity insulating barrier, and its material can comprise transparent material, for example silicon dioxide (SiO
2), silicon nitride (SiN), titanium dioxide (TiO
2), aluminium oxide (Al
2O
3) or spin silicon-coated glass (silicon on glass, SOG) or insulating barrier 27 can comprise the normal material of high dielectric, for example nitrogen-oxygen-silicon hafnium compound (HfSiON), hafnium oxide (HfO
2) or zirconium dioxide (ZrO
2).
First conductive branches, 231,241 overlapping settings through first electrode 23 and second electrode 24; And second conductive branches, 233, the 243 overlapping settings of first electrode 23 and second electrode 24; Can reduce electrode shading area; And then the increase efficient lighting area, and increase capacitance and promote antistatic effect.In this embodiment, second conductive branches 233,243 is connected with connecting portion 232,242 respectively, in other embodiments, and second conductive branches 233,243 or can be connected with first electrode 23 another connecting portion with second electrode 24.In addition, in the present embodiment, two connecting portions, 232, the 242 not overlapping settings of electrode.
Below illustrate the manufacturing approach of light-emitting diode 2 with Fig. 5 and Fig. 6 A to Fig. 6 D.Wherein Fig. 5 is the process step figure of manufacturing approach, wherein comprises step S01 to step S03, and Fig. 6 A to Fig. 6 D is the schematic flow sheet of manufacturing approach.
Shown in Fig. 6 A, at first, on substrate 21, form epitaxial loayer 22 (step S01), (metal organic chemical vapor deposition MOCVD) is formed at epitaxial loayer 22 on the substrate 21 can for example to pass through the Metalorganic chemical vapor deposition method.Epitaxial loayer 22 can for example comprise first semiconductor layer 221, second semiconductor layer 222 and multiple quantum trap layer 223, wherein first semiconductor layer 221 and second semiconductor layer 222 have different electrically.In the present embodiment, first semiconductor layer 221 is the P type, and second semiconductor layer is the N type, and multiple quantum trap layer 223 is located between first semiconductor layer 221 and second semiconductor layer 222.After forming epitaxial loayer 22; For second semiconductor layer 222 that electrically conducts; First semiconductor layer 221 for example utilizes with the part in the multiple quantum trap layer 223, and the photoengraving carving technology removes; In order to second semiconductor layer, 222 surfaces of exposed portions serve, also comprise in the present embodiment epitaxial loayer 22 is etched groove 25, wherein groove etching to the second semiconductor layer 222 of epitaxial loayer 22.
Then, for example see through electron beam evaporation plating (Electron Beam Evaporation) on epitaxial loayer 22 the electrode evaporation metal on it, and the floating separating process of photoetching forms first electrode 23.Shown in Fig. 6 B, form first conductive branches 231 and second conductive branches 233 (step S02) of first electrode 23 at epitaxial loayer 22.In this, first conductive branches 231 of first electrode 23 and second conductive branches 233 are formed in the groove 25 and are positioned at groove 25 surfaces, and contact second semiconductor layer 222.Certainly, in the formation step of first conductive branches 231, also can form the connecting portion 232 of first electrode 23 simultaneously, and connecting portion 232 is connected (please with reference to Fig. 3) with first conductive branches 231 and second conductive branches 233 respectively.In addition, manufacturing approach also comprises first conductive branches 231 that forms reflector 26 coverings first electrode 23, and at this, reflector 26 also covers second conductive branches 233 of first electrode 23.
Then; Shown in Fig. 6 C; Manufacturing approach also comprises and forms insulating barrier 27 between first conductive branches 241 of first conductive branches 231 of first electrode 23 and second electrode 24, and (Chemical vapor deposition is CVD) at the surface of whole light-emitting diode 2 formation insulating barrier to utilize chemical vapour deposition (CVD) at this; And then remove unwanted part with the photoengraving carving technology; And form first conductive branches 231 and second conductive branches 233 that insulating barrier 27 covers first electrode 23, at this, insulating barrier 27 fillings are in groove 25.
Then, shown in Fig. 6 D, manufacturing approach also comprises the conductive layer that utilizes electron beam evaporation plating for example on epitaxial loayer 22, to form the printing opacity that covers whole, and then removes unwanted part with the photoengraving carving technology, forms light transmission conductive layer 28 on epitaxial loayer 22.And then for example see through the electron beam evaporation plating electrode metal on light transmission conductive layer 28, and the floating separating process of photoetching, and form second electrode 24.Form first conductive branches 241 and second conductive branches 243 of second electrode 24; Make first conductive branches 231, the 233 overlapping settings (step S03) of second conductive branches of first conductive branches 241, second conductive branches 243 and first electrode 23 of second electrode 24, and insulating barrier 27 is between first conductive branches 241 of first conductive branches 231, second conductive branches 233 and second electrode 24 of first electrode 23, second conductive branches 243.Certainly, in the formation step of first conductive branches 241, also can form the connecting portion 242 of second electrode 24 simultaneously, and connecting portion 242 is connected with first conductive branches 241 and second conductive branches 243 respectively.Wherein, the connecting portion 232 of first electrode 23 not with the connecting portion 242 overlapping settings of second electrode 24, second conductive branches, the 243 overlapping settings of second conductive branches 233 of first electrode 23 and second electrode 24.
Because the technical characterictic of the element that manufacturing approach is mentioned has been specified in the foregoing description, so repeat no more in this.
In sum; Light-emitting diode of the present invention and manufacturing approach thereof are the overlapping settings of first conductive branches through first conductive branches of first electrode and second electrode; Can reduce the electrode shared area that is crisscross arranged and effectively increase light-emitting area with activation; Reduce electrode extinction probability, and the electrode of overlapping setting can form shunt capacitance and increase the element antistatic effect to absorb store charge, but the so luminous power and the element efficiency of lift elements.
The above is merely illustrative, but not is restricted person.Anyly do not break away from spirit of the present invention and category, and, all should be contained in the claim its equivalent modifications of carrying out or change.
Claims (17)
1. light-emitting diode comprises:
Substrate;
Epitaxial loayer is arranged on this substrate;
First electrode is arranged at this epitaxial loayer and has first conductive branches; And
Second electrode is arranged on this epitaxial loayer, and the overlapping setting of this first conductive branches of first conductive branches of this second electrode and this first electrode.
2. light-emitting diode as claimed in claim 1, wherein this first conductive branches of this first conductive branches of this first electrode and this second electrode is a strip.
3. light-emitting diode as claimed in claim 1; Wherein this first electrode also has connecting portion and is connected with this first conductive branches of this first electrode; This second electrode also has connecting portion and is connected the not overlapping setting of these a plurality of connecting portions with this first conductive branches of this second electrode.
4. light-emitting diode as claimed in claim 3, wherein these a plurality of connecting portions are conductive pad.
5. light-emitting diode as claimed in claim 1, wherein this first conductive branches of this first electrode is positioned at the groove of this epitaxial loayer.
6. light-emitting diode as claimed in claim 5; Wherein this epitaxial loayer has first semiconductor layer, second semiconductor layer and multiple quantum trap layer; This multiple quantum trap layer is between this first semiconductor layer and this second semiconductor layer, and this first electrode is positioned at the surface of this groove of this second semiconductor layer.
7. light-emitting diode as claimed in claim 5, wherein this first conductive branches of this first electrode is covered by the reflector.
8. light-emitting diode as claimed in claim 5 also comprises:
Insulating barrier is between this first conductive branches of this first conductive branches of this first electrode and this second electrode.
9. light-emitting diode as claimed in claim 1, wherein this first conductive branches of this first conductive branches of this first electrode and this second electrode forms electric capacity.
10. light-emitting diode as claimed in claim 1, wherein this first electrode also has second conductive branches, and this second electrode also has second conductive branches, the overlapping setting of these a plurality of second conductive branches.
11. the manufacturing approach of a light-emitting diode comprises:
On substrate, form epitaxial loayer;
Form first conductive branches of first electrode in this epitaxial loayer; And
On this epitaxial loayer, form first conductive branches of second electrode, make this first conductive branches of this second electrode and the overlapping setting of this first conductive branches of this first electrode.
12. the manufacturing approach of light-emitting diode as claimed in claim 11 also comprises:
This epitaxial loayer is etched groove, make first conductive branches of this first electrode be positioned at this groove.
13. the manufacturing approach of light-emitting diode as claimed in claim 12; Wherein this epitaxial loayer has first semiconductor layer and second semiconductor layer; The etching step of this groove is etched to this second semiconductor layer, makes this first conductive branches of this first electrode connect this second semiconductor layer.
14. the manufacturing approach of light-emitting diode as claimed in claim 11 also comprises:
Form this first conductive branches that the reflector covers this first electrode.
15. the manufacturing approach of light-emitting diode as claimed in claim 11 also comprises:
Form insulating barrier between this first conductive branches of this first conductive branches of this first electrode and this second electrode.
16. the manufacturing approach of light-emitting diode as claimed in claim 11 also comprises:
The connecting portion that forms this first electrode is connected with this first conductive branches of this first electrode; And
The connecting portion that forms this second electrode is connected with this first conductive branches of this second electrode, and this connecting portion that makes this first electrode not with the overlapping setting of this connecting portion of this second electrode.
17. the manufacturing approach of light-emitting diode as claimed in claim 11 also comprises:
Form second conductive branches of this first electrode in this epitaxial loayer; And
On this epitaxial loayer, form second conductive branches of this second electrode, and make this second conductive branches of this first electrode and the overlapping setting of this second conductive branches of this second electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010105268422A CN102456793A (en) | 2010-10-25 | 2010-10-25 | Light-emitting diode component and manufacturing method for same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010105268422A CN102456793A (en) | 2010-10-25 | 2010-10-25 | Light-emitting diode component and manufacturing method for same |
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|---|---|
| CN102456793A true CN102456793A (en) | 2012-05-16 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107431108A (en) * | 2015-03-26 | 2017-12-01 | Lg 伊诺特有限公司 | Light-emitting component and light-emitting element package |
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| US6097040A (en) * | 1997-07-23 | 2000-08-01 | Sharp Kabushiki Kaisha | Semiconductor light emitting device that prevents current flow in a portion thereof directly under an electrode wire bonding pad |
| CN1630110A (en) * | 2003-12-18 | 2005-06-22 | 三星电机株式会社 | Nitride semiconductor light emitting device |
| US20060071228A1 (en) * | 2004-10-06 | 2006-04-06 | Lumileds Lighting U.S., Llc | Contact and omnidirectional reflective mirror for flip chipped light emitting devices |
| CN101764187A (en) * | 2008-12-24 | 2010-06-30 | Lg伊诺特有限公司 | Electrode structure for a semiconductor light emitting diode |
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2010
- 2010-10-25 CN CN2010105268422A patent/CN102456793A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6097040A (en) * | 1997-07-23 | 2000-08-01 | Sharp Kabushiki Kaisha | Semiconductor light emitting device that prevents current flow in a portion thereof directly under an electrode wire bonding pad |
| CN1630110A (en) * | 2003-12-18 | 2005-06-22 | 三星电机株式会社 | Nitride semiconductor light emitting device |
| US20060071228A1 (en) * | 2004-10-06 | 2006-04-06 | Lumileds Lighting U.S., Llc | Contact and omnidirectional reflective mirror for flip chipped light emitting devices |
| CN101764187A (en) * | 2008-12-24 | 2010-06-30 | Lg伊诺特有限公司 | Electrode structure for a semiconductor light emitting diode |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107431108A (en) * | 2015-03-26 | 2017-12-01 | Lg 伊诺特有限公司 | Light-emitting component and light-emitting element package |
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Application publication date: 20120516 |