CN102393572A - Coplanar waveguide silicon-based electro-optic modulator - Google Patents
Coplanar waveguide silicon-based electro-optic modulator Download PDFInfo
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- CN102393572A CN102393572A CN2011103649157A CN201110364915A CN102393572A CN 102393572 A CN102393572 A CN 102393572A CN 2011103649157 A CN2011103649157 A CN 2011103649157A CN 201110364915 A CN201110364915 A CN 201110364915A CN 102393572 A CN102393572 A CN 102393572A
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Abstract
The invention provides a coplanar waveguide silicon-based electro-optic modulator. The modulator comprises an input waveguide, a first beam splitter, a first modulation arm, a second modulation arm, a silicon-based optical delay line device, a second beam splitter and an output waveguide, wherein the input end of the first beam splitter is connected with the input waveguide; one end of the first modulation arm is connected with the output end of the first beam splitter; one end of the second modulation arm is connected with the output end of the first beam splitter; the silicon-based optical delay line device is coupled with the first modulation arm or the second modulation arm; the input end of the second beam splitter is connected with the other end of the first modulation arm and the other end of the second modulation arm; and one end of the output waveguide is connected with the output end of the second beam splitter.
Description
Technical field
The present invention relates to the optical device preparation field, especially the co-planar waveguide silicon-based electro-optical modulator.
Background technology
Silica-based photomodulator is the important devices in silica-based light interconnection and the optical communication system, and its effect is that electric signal is transformed into light signal, utilizes the huge advantage of optical signal transmission, realizes data communication more at a high speed.The effective method that changes the refractive index of silicon is to utilize the free carrier plasma dispersion effect.The plasma dispersion effect of silicon has reacted refractive index and the absorption coefficient of the silicon variation relation with free carrier concentration.Change the refractive index of silicon, plasma dispersion effect is than the fast one magnitude of thermo-optic effect.Therefore utilize plasma dispersion effect to realize that high-speed optical signal modulation in the silicon is effective means.Utilize the p-i-n structure, reverse pn structure and mos capacitance structure realize the injection of charge carrier or extract to be the generally electricity structure of employing of silicon-based electro-optical modulator research institute.Simultaneously, Mach-Zehnder interferometer structure and micro-ring resonant cavity configuration are the general optical textures of employing of institute in the silicon-based electro-optical modulator research.Micro-ring resonant cavity configuration modulating speed is fast, but bandwidth of operation and its application is restricted to wavelength and temperature sensitive characteristic.And the Mach-Zehnder interferometer structure is insensitive to temperature and wavelength, and process allowance is big, is had an optimistic view of by the forerunner of silicon-based electro-optical modulators such as Intel and IBM research.Yet the electrooptic modulator of Mach-Zehnder interferometer structure also is faced with a problem that modulation efficiency is not high, makes its size be far longer than the electrooptic modulator of micro-ring resonant cavity configuration, is unfavorable for preparation of devices and integrated with electronics device.
Summary of the invention
The objective of the invention is to propose the co-planar waveguide silicon-based electro-optical modulator; The present modulation efficiency that faces is not high in the research of solution silicon-based electro-optical modulator; Size is big, to problems such as wavelength and responsive to temperatures, has the modulation efficiency height; Low in energy consumption, can adopt identical advantages such as the disposable preparation of technology with silicon-based electro-optical modulator.
A kind of co-planar waveguide silicon-based electro-optical modulator comprises:
One input waveguide;
One first beam splitter, the input end of this first beam splitter is connected with input waveguide;
One first modulation arm, an end of this first modulation arm is connected with the first beam splitter output terminal;
One second modulation arm, an end of this second modulation arm is connected with the first beam splitter output terminal;
One silica-based optical delay line device, this silica-based optical delay line device and first modulation arm or the coupling of second modulation arm;
One second beam splitter, the input end of this second beam splitter is connected with the other end of first modulation arm and second modulation arm;
One output waveguide, an end of this output waveguide is connected with the output terminal of second beam splitter.
Wherein said first beam splitter and second beam splitter are multi-mode interference coupler, Y branch beam splitter or direct coupling beam divider.
Wherein said silica-based optical delay line device is a silicon-based micro ring resonator optical delay line device.
Wherein said silica-based optical delay line device is a silicon-based cascade micro-ring resonant cavity optical delay line device.
Wherein said silica-based optical delay line device is silica-based little dish resonator cavity optical delay line device.
Wherein said silica-based optical delay line device is the little dish resonator cavity of a silicon-based cascade optical delay line device.
Wherein said silica-based optical delay line device is a silicon based photon crystal resonator cavity optical delay line device.
Wherein said silica-based optical delay line device is a silicon base Fabry-Perot harmonic light lag line device.
Description of drawings
For further specifying content of the present invention and characteristics, below in conjunction with accompanying drawing and embodiment the present invention is done a detailed description, wherein:
Fig. 1 is the block scheme of co-planar waveguide silicon-based electro-optical modulator of the present invention.
Fig. 2 is that the present invention utilizes micro-ring resonant cavity optical delay line device to make up the embodiment of co-planar waveguide silicon-based electro-optical modulator.
Fig. 3 a to Fig. 3 c is three embodiment that utilize cascade micro-ring resonant cavity optical delay line device to make up the co-planar waveguide silicon-based electro-optical modulator of the present invention.
Fig. 4 is that the present invention of the present invention utilizes photonic crystal optical delay line device to make up the embodiment of co-planar waveguide silicon-based electro-optical modulator.
Embodiment
Visible from Fig. 1, high-level efficiency co-planar waveguide silicon-based electro-optical modulator of the present invention comprises an input waveguide 1; One first beam splitter 2, the input end of this first beam splitter 2 is connected with input waveguide 1, and first beam splitter 2 can be multi-mode interference coupler, Y branch beam splitter or direct coupling beam divider; One first modulation arm 3, an end of this first modulation arm 3 is connected with first beam splitter, 2 output terminals; One second modulation arm 4, an end of this second modulation arm 4 is connected with first beam splitter, 2 output terminals; One silica-based optical delay line device 31; This silica-based optical delay line device 31 and first modulation arm 3 or 4 couplings of second modulation arm, silica-based optical delay line device 31 is silicon-based micro ring resonator optical delay line devices, or silicon-based cascade micro-ring resonant cavity optical delay line device; Or silica-based little dish resonator cavity optical delay line device; Or the little dish resonator cavity of silicon-based cascade optical delay line device, or silicon based photon crystal resonator cavity optical delay line device, or silicon base Fabry-Perot harmonic light lag line device; One second beam splitter 5, the input end of this second beam splitter 5 is connected with the other end of first modulation arm 3 and second modulation arm 4, and second beam splitter 5 can be multi-mode interference coupler, Y branch beam splitter or direct coupling beam divider; One output waveguide 6, an end of this output waveguide 6 is connected with the output terminal of second beam splitter 5.From the light of input waveguide 1 input, be divided into two bundles that intensity, phase place equate at first beam splitter 2, get into modulation arm 3 and modulation arm 4 respectively; Optical delay line device 31 is coupled with modulation arm 3, and the light that gets into modulation arm 3 will be coupled into optical delay line device 31, and the light that another bundle gets into modulation arm 4 then continues to maintain the original state and in modulation arm 4, transmits; When optical delay line device 31 is applied modulation signal; When injecting charge carrier, because the light delay effect of optical delay line device 31 makes the light group velocity reduce; Thereby making increases with the interactional photon number of unit charge carrier; That is to say, make that modulation efficiency improves through the required charge carrier number minimizing of the light phase change π of modulation arm 3.When the phase differential of the light of exporting when the light of modulation arm 3 output and modulation arm 4 is π; The output terminal of second beam splitter 5 produces to interfere and disappears mutually; The output light signal is low in the output waveguide 6; When the equiphase of the light of modulation arm 3 output and modulation arm 4 outputs, the output terminal of second beam splitter 5 produces interferes longly mutually, and exporting light signal in the output waveguide 6 is height.
Fig. 2 is an embodiment of high-level efficiency co-planar waveguide silicon-based electro-optical modulator of the present invention.Silica-based optical delay line device 31 is coupled with the modulation arm 3 of co-planar waveguide silicon-based electro-optical modulator.In the present embodiment, silica-based optical delay line device 31 is a silicon-based micro ring resonator.Light from input waveguide 1 input; Be divided into two bundles that intensity, phase place equate at first beam splitter 2; Get into modulation arm 3 and modulation arm 4 respectively, when silicon-based micro ring resonator was in the overcoupling state, the group velocity that is coupled into the light in the micro-ring resonant cavity lag line device 31 was slack-off.At this moment; In micro-ring resonant cavity, inject charge carrier, because the group velocity of light is slack-off, photon is before the micro-ring resonant cavity that is coupled out continues transmission; To there be the charge carrier of more opportunity and injection to interact; Thereby make the light phase in the micro-ring resonant cavity compare with the light phase in the ordinary silicon based optical waveguide, variable quantity is bigger, thereby makes in modulation arm 3 phase differential of the light exported in light and the modulation arm 4 of output more effectively reach the required π phase place of intensity modulated.When the phase differential of the light of exporting when the light of modulation arm 3 output and modulation arm 4 is π; The output terminal of second beam splitter 5 produces to interfere and disappears mutually; The output light signal is low in the output waveguide 6; When the equiphase of the light of modulation arm 3 output and modulation arm 4 outputs, the output terminal of second beam splitter 5 produces interferes longly mutually, and exporting light signal in the output waveguide 6 is height.Fig. 2 is the schematically statement of embodiment, and optical delay line device 31 equally also can be coupled with modulation arm 4, and perhaps modulation arm 3 respectively has an optical delay line device and its coupling with modulation arm 4.
Fig. 3 is an embodiment of high-level efficiency co-planar waveguide silicon-based electro-optical modulator of the present invention.Silica-based optical delay line device 31 is made up of the cascade micro-ring resonant cavity, is coupled with the modulation arm 3 of co-planar waveguide silicon-based electro-optical modulator.Compare with the single micro-ring resonant cavity described in Fig. 2, the cascade micro-ring resonant cavity has higher bandwidth and bigger light delay, thereby can more effectively promote the charge carrier of photon and injection to interact.Fig. 3 a is that optical delay line device 31 is the co-planar waveguide silicon-based electro-optical modulator of all-pass wave filtering type cascade micro-ring resonant cavity configuration; Fig. 3 b is that optical delay line device 31 is the co-planar waveguide silicon-based electro-optical modulator of coupled resonator optical-waveguide-type cascade micro-ring resonant cavity configuration, and Fig. 3 c is that optical delay line device 31 is the co-planar waveguide silicon-based electro-optical modulator of all-pass wave filtering type coupled resonator optical-waveguide-type cascade micro-ring resonant cavity configuration.The optical delay line device of cascade micro-ring resonant cavity configuration also has an advantage; Can on each micro-ring resonant cavity, inject charge carrier respectively; The superposition phase difference of final output reaches the required π phase place of intensity modulated and gets final product; And do not need directly to utilize a micro-ring resonant cavity just to be adjusted to the π phase differential, when improving silicon-based electro-optical modulator efficient, can also effectively reduce the modulator power consumption.When the phase differential of the light of exporting when the light of modulation arm 3 output and modulation arm 4 is π; The output terminal of second beam splitter 5 produces to interfere and disappears mutually; The output light signal is low in the output waveguide 6; When the equiphase of the light of modulation arm 3 output and modulation arm 4 outputs, the output terminal of second beam splitter 5 produces interferes longly mutually, and exporting light signal in the output waveguide 6 is height.Fig. 3 is the schematically statement of embodiment, and optical delay line device 31 equally also can be coupled with modulation arm 4, and perhaps modulation arm 3 respectively has an optical delay line device and its coupling with modulation arm 4.
Fig. 4 is an embodiment of high-level efficiency co-planar waveguide silicon-based electro-optical modulator of the present invention.Silicon based photon optical delay line device 31 is that the photonic crystal optical delay line constitutes, and is coupled with the modulation arm 3 of co-planar waveguide silicon-based electro-optical modulator.The photonic crystal optical delay line can be so that device size be littler owing to the strong restriction to light.When the phase differential of the light of exporting when the light of modulation arm 3 output and modulation arm 4 is π; The output terminal of second beam splitter 5 produces to interfere and disappears mutually; The output light signal is low in the output waveguide 6; When the equiphase of the light of modulation arm 3 output and modulation arm 4 outputs, the output terminal of second beam splitter 5 produces interferes longly mutually, and exporting light signal in the output waveguide 6 is height.Fig. 4 is the schematically statement of embodiment, and optical delay line device 31 equally also can be coupled with modulation arm 4, and perhaps modulation arm 3 respectively has an optical delay line device and its coupling with modulation arm 4.
In sum, high-level efficiency co-planar waveguide silicon-based electro-optical modulator of the present invention has the following advantages at least:
High-level efficiency co-planar waveguide silicon-based electro-optical modulator modulation efficiency of the present invention is high, compact conformation, and size is little.
High-level efficiency co-planar waveguide silicon-based electro-optical modulator of the present invention all can with same material in the Mach-Zehnder modulator structure, prepare under the same technology, do not need any additional technique.
The above; Only be embodiments of the invention; Be not that the present invention is done any pro forma restriction; Every according to technical spirit of the present invention to any simple modification, equivalent variations and modification that above embodiment did, all still belong within the technical scheme scope of the present invention, so protection scope of the present invention is when being as the criterion with claims.
Claims (8)
1. co-planar waveguide silicon-based electro-optical modulator comprises:
One input waveguide;
One first beam splitter, the input end of this first beam splitter is connected with input waveguide;
One first modulation arm, an end of this first modulation arm is connected with the first beam splitter output terminal;
One second modulation arm, an end of this second modulation arm is connected with the first beam splitter output terminal;
One silica-based optical delay line device, this silica-based optical delay line device and first modulation arm or the coupling of second modulation arm;
One second beam splitter, the input end of this second beam splitter is connected with the other end of first modulation arm and second modulation arm;
One output waveguide, an end of this output waveguide is connected with the output terminal of second beam splitter.
2. co-planar waveguide silicon-based electro-optical modulator according to claim 1, wherein said first beam splitter and second beam splitter are multi-mode interference coupler, Y branch beam splitter or direct coupling beam divider.
3. co-planar waveguide silicon-based electro-optical modulator according to claim 1, wherein said silica-based optical delay line device is a silicon-based micro ring resonator optical delay line device.
4. co-planar waveguide silicon-based electro-optical modulator according to claim 1, wherein said silica-based optical delay line device are silicon-based cascade micro-ring resonant cavity optical delay line devices.
5. co-planar waveguide silicon-based electro-optical modulator according to claim 1, wherein said silica-based optical delay line device are silica-based little dish resonator cavity optical delay line devices.
6. co-planar waveguide silicon-based electro-optical modulator according to claim 1, wherein said silica-based optical delay line device are the little dish resonator cavity of silicon-based cascade optical delay line devices.
7. co-planar waveguide silicon-based electro-optical modulator according to claim 1, wherein said silica-based optical delay line device are silicon based photon crystal resonator cavity optical delay line devices.
8. co-planar waveguide silicon-based electro-optical modulator according to claim 1, wherein said silica-based optical delay line device are silicon base Fabry-Perot harmonic light lag line devices.
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| CN2011103649157A CN102393572A (en) | 2011-11-17 | 2011-11-17 | Coplanar waveguide silicon-based electro-optic modulator |
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| CN2011103649157A CN102393572A (en) | 2011-11-17 | 2011-11-17 | Coplanar waveguide silicon-based electro-optic modulator |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105629625A (en) * | 2016-03-02 | 2016-06-01 | 北方工业大学 | Dual microring resonant cavity differential delay based all-optical logic exclusive OR gate |
| CN105910546A (en) * | 2016-04-20 | 2016-08-31 | 北京信息科技大学 | BOTDR system based on dual-channel Mach-Zehnder interferometer |
| CN105953724A (en) * | 2016-04-20 | 2016-09-21 | 北京信息科技大学 | Two-channel adjustable Mach-Zehnder interferometer |
| CN109960063A (en) * | 2017-12-14 | 2019-07-02 | 科大国盾量子技术股份有限公司 | A kind of polarization modulating arrangement that silicon substrate is integrated |
| CN111711488A (en) * | 2020-07-23 | 2020-09-25 | 北京爱杰光电科技有限公司 | Optical signal transmitting device for 5G communication |
-
2011
- 2011-11-17 CN CN2011103649157A patent/CN102393572A/en not_active Withdrawn
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105629625A (en) * | 2016-03-02 | 2016-06-01 | 北方工业大学 | Dual microring resonant cavity differential delay based all-optical logic exclusive OR gate |
| CN105910546A (en) * | 2016-04-20 | 2016-08-31 | 北京信息科技大学 | BOTDR system based on dual-channel Mach-Zehnder interferometer |
| CN105953724A (en) * | 2016-04-20 | 2016-09-21 | 北京信息科技大学 | Two-channel adjustable Mach-Zehnder interferometer |
| CN109960063A (en) * | 2017-12-14 | 2019-07-02 | 科大国盾量子技术股份有限公司 | A kind of polarization modulating arrangement that silicon substrate is integrated |
| CN109960063B (en) * | 2017-12-14 | 2024-02-06 | 科大国盾量子技术股份有限公司 | Silicon-based integrated polarization modulation device |
| CN111711488A (en) * | 2020-07-23 | 2020-09-25 | 北京爱杰光电科技有限公司 | Optical signal transmitting device for 5G communication |
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Application publication date: 20120328 |