CN102324453A - High-power LED (Light Emitting Diode) packaging process of double-layer lens - Google Patents
High-power LED (Light Emitting Diode) packaging process of double-layer lens Download PDFInfo
- Publication number
- CN102324453A CN102324453A CN201110304919A CN201110304919A CN102324453A CN 102324453 A CN102324453 A CN 102324453A CN 201110304919 A CN201110304919 A CN 201110304919A CN 201110304919 A CN201110304919 A CN 201110304919A CN 102324453 A CN102324453 A CN 102324453A
- Authority
- CN
- China
- Prior art keywords
- lens
- led
- power led
- double layer
- injection moulding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Led Device Packages (AREA)
Abstract
The invention discloses a high-power LED (Light Emitting Diode) packaging process of a double-layer lens. The process comprises the following steps of: (1) washing a bracket and carrying out die bonding and wire bonding; (2) forming a first lens by using a first lens mold; (3) baking the first lens; (4) forming a second lens by using a second lens mold; (5) baking the second lens; (6) cooling and detecting; splitting the light; and then packaging. According to the invention, two-injection molding process is adopted for the high-power LED lens; the first lens is used for covering the chip and filling a small gap in the base; and the second lens is directly formed outside the first lens to be closely bonded with the first lens and secondarily bonded with the base; and the two-injection molding process obtains more stable effect while being compared with once glue injection form in the prior art so that the cracking, fall-off and light leakage of the silica gel lens can be prevented.
Description
[technical field]
The present invention relates to a kind of LED packaging technology, refer in particular to a kind of high-power LED encapsulation technology of double layer lens.
[background technology]
Along with the continuous progress of national semiconductor lighting engineering and the continuous call of energy-saving and emission-reduction and low-carbon economy, the LED illumination comes into one's own all the more.Compare with traditional incandescent lamp, under same brightness, the electric energy that LED consumes is merely 1/8th of incandescent lamp.The application of LED lighting technology is energy savings greatly, reduces emission of carbon-dioxide, the environment of preserving our planet.Great power LED has good application prospects with its long-life, high light efficiency, advantage such as energy-conservation.Existing high-power LED encapsulation generally has two kinds, and the one, the PC lens arrangement, another kind is the silica-gel lens structure.Because silica-gel lens has good light transmittance and resistance to elevated temperatures, can adapt to the reflow soldering process of automation and extensively adopted.Yet existing high-power LED encapsulation technology is when making silica-gel lens; Adopt the method for single injection-molded; Silica-gel lens after the method moulding and stand base inside and conductive feet, chip combine dynamics not enough, under the hot operation state, burst apart easily, or produce the defective of light leak.
[summary of the invention]
The present invention is directed to the silica-gel lens that exists in the prior art and combine the not enough technological deficiency of dynamics with rack body, provide a kind of silica-gel lens to combine firm high-power LED encapsulation technology.
In order to reach above-mentioned technical purpose, the technological means that the present invention taked is a kind of high-power LED encapsulation technology of double layer lens, may further comprise the steps:
The first step: adopt ultrasonic wave plasma cleaning equipment that led support is cleaned, then led chip is fixed in the cup bowl of led support, and led chip is carried out the conductivity connection;
Second step: aforementioned led support is put into the anchor clamps that preset adopt first lens die to form first lens in the pedestal injection moulding of led support, said first lens are silica-gel lens;
The 3rd step: the LED that will be formed with first lens puts into baking box and toasts; Baking is divided into three phases, and the phase I baking temperature is at 80 ℃～100 ℃, stoving time 60min; The second stage baking temperature is between 120 ℃～150 ℃; Stoving time is 40min, and the phase III baking temperature is between 180 ℃～200 ℃, and stoving time is 20min;
The 4th step: from baking box, take out aforementioned LED; Putting into the anchor clamps that preset after the cooling adopts second lens die outside said first lens, to form second lens through injection moulding; Said second lens are silica-gel lens, and the distance at lens top, the said second lens top to the first is between 1～3mm;
The 5th step: the LED that will be formed with second lens puts into baking box and toasts; Baking is divided into three phases, and the phase I baking temperature is at 80 ℃～100 ℃, stoving time 40min; The second stage baking temperature is between 120 ℃～150 ℃; Stoving time is 30min, and the phase III baking temperature is between 180 ℃～200 ℃, and stoving time is 15min;
The 6th step: from baking box, take out LED, detect after the cooling, beam split, pack at last.
High-power LED lens of the present invention adopts the technology of twice injection molded; First lens are used to cover chip and fill the little space in the pedestal; Second lens directly are formed at outside first lens, fully closely paste with first lens, and form the secondary stickup with pedestal; Compare with the form of an injecting glue in the prior art and to have more firm effect, can prevent bursting apart, come off and light leakage phenomena of silica-gel lens.
Preferably; The surface of said first lens and second lens is matsurface; The surface of first lens is made matsurface and is mainly used in second lens and forms firm cohesive force, and the surface of second lens is made matsurface and is mainly used in diffusion light, changes the propagation path of light; Avoid total reflection, improve external quantum efficiency.
Preferably, evenly be mixed with fluorescent material in said second lens.
Preferably, said led chip is a blue-light LED chip, and said fluorescent material is yellow fluorescent powder.
Preferably, the peak wavelength of said blue-light LED chip is between 445～475nm, and the peak wavelength that said yellow fluorescent powder is stimulated is between 540～580nm.
Preferably, accomplish the first step, carrying out on led chip, putting fluorescent glue, and toasting before second step, said led chip is a blue-light LED chip, and said fluorescent glue is a yellow fluorescent glue.
Preferably, said fluorescent material is red fluorescence powder.
Preferably, the peak wavelength that is stimulated of said red fluorescence powder is between 620～660nm.
Preferably, the distance at lens top, the said second lens top to the first is 2mm.
Preferably; The injection moulding air pressure that injection moulding forms first lens in said second step is between 1Mpa～3Mpa; The injection moulding air pressure that injection moulding forms second lens in said the 4th step is between 2Mpa～4Mpa; The mode that the injection moulding air pressure of said shaping first lens and second lens adopts staged to increase progressively gradually, and before each pressurization minibreak 1s～5s.
[description of drawings]
Shown in Figure 1 is the structural representation of led support of the present invention;
Shown in Figure 2 is the generalized section of the first transparent formed structure of the present invention;
Shown in Figure 3 is the generalized section of the second forming lens structure of the present invention;
Shown in Figure 4 for the structural representation of first kind of preferred implementation of the present invention;
Shown in Figure 5 for the structural representation of second kind of preferred implementation of the present invention;
Another structural representation for the formation of the present invention's first lens shown in Figure 6;
Another structural representation for the formation of the present invention's second lens shown in Figure 7;
Shown in Figure 8 is process flow diagram of the present invention.
[embodiment]
For further detailed elaboration technical scheme of the present invention, describe below in conjunction with accompanying drawing.
Referring to Figure of description 1, Fig. 2 Fig. 3 and Fig. 8 institute not, the invention discloses a kind of high-power LED encapsulation technology of double layer lens, may further comprise the steps:
The first step: adopt ultrasonic wave plasma cleaning equipment that led support 1 is cleaned; Then led chip 5 is fixed on (promptly solid brilliant process) in the cup bowl 4; And weld conductor wire 5a, 5b, the both positive and negative polarity of led chip 5 is electrically connected with conductive feet 2a, 2b through conductor wire 5a, 5b;
Second step: aforementioned led support 1 is put into the anchor clamps that preset adopt first lens die to form first lens 61 in pedestal 3 injection mouldings of led support 1; Said first lens 61 are silica-gel lens; Injection moulding forms the injection moulding air pressure of first lens between 1Mpa～3Mpa; The mode that said injection moulding air pressure adopts staged to increase progressively is gradually pressurizeed respectively like a minute 1Mpa, 1.5Mpa, 2Mpa three phases, and before each pressurization minibreak 1s～5s;
When injecting glue first, owing in the cavity 10 in the pedestal 3 a lot of little spaces are arranged, and conductor wire 5a, 5b are directly exposed, should not adopt bigger injection moulding air pressure to carry out injecting glue.Earlier carry out injecting glue with less injection moulding air pressure, and pause 5s, make colloid fill various little spaces naturally lentamente, be difficult for this moment producing bubble, and can protect conductor wire 5a, 5b not to receive extruding more energetically.After injecting the part colloid under the injection moulding air pressure of the 1Mpa first time; Because most little space is filled; And conductor wire 5a, 5b have also obtained good protection; Adopt the injection moulding air pressure of 1.5Mpa to carry out the secondary injecting glue this moment, the 2s that pauses then, and the injection moulding air pressure that directly is pressurized to 2Mpa at last carries out sealing.Three injecting glue modes stage by stage can be avoided generation, protection conductor wire 5a, the 5b of bubble, and make colloid fully contact the firm bonding force of formation with support.
The 3rd step: the LED that will be formed with first lens 61 puts into baking box and toasts; Baking is divided into three phases, and the phase I baking temperature is at 80 ℃～100 ℃, stoving time 60min; The second stage baking temperature is between 120 ℃～150 ℃; Stoving time is 40min, and the phase III baking temperature is between 180 ℃～200 ℃, and stoving time is 20min;
Three temperature lifting type roasting modes stage by stage help colloid to finalize the design slowly, eliminate internal stress, and form firm bonding force.
The 4th step: from baking box, take out aforementioned LED; Putting into the anchor clamps that preset after the cooling adopts second lens die outside said first lens 61, to form second lens 62 through injection moulding; Form the mode that the mode of second lens 62 adopts the injection pressure stage to increase progressively equally and carry out injecting glue (specifically referring to the injecting glue mode in second step); Said second lens 62 are silica-gel lens, the distance h at said second lens, 62 top to the first lens 61 tops between 1～3mm, preferred 2mm;
The 5th step: the LED that will be formed with second lens 62 puts into baking box and toasts; Baking is divided into three phases, and the phase I baking temperature is at 80 ℃～100 ℃, stoving time 40min; The second stage baking temperature is between 120 ℃～150 ℃; Stoving time is 30min, and the phase III baking temperature is between 180 ℃～200 ℃, and stoving time is 15min;
Three temperature lifting type roasting modes stage by stage help colloid to finalize the design slowly, eliminate internal stress, and form firm bonding force.
The 6th step: from baking box, take out LED, detect after the cooling, beam split, pack at last.
High-power LED lens of the present invention adopts the technology of twice injection molded; First lens 61 are used to cover the little space that led chip 5 is filled in the pedestal 3; Second lens 62 directly are formed at outside first lens 61, fully closely paste with first lens 61, and form the secondary stickup with pedestal 3; Compare with the form of an injecting glue in the prior art and to have more firm effect, can prevent bursting apart, come off and light leakage phenomena of silica-gel lens.
As further improvement of the present invention; The surface of said first lens 61 and second lens 62 is matsurface (not shown); The surface of first lens 61 is made matsurface and is mainly used in and the firm cohesive force of second lens, 62 formation, and the surface of second lens 62 is made matsurface and is mainly used in diffusion light, changes the propagation path of light; Avoid total reflection, improve external quantum efficiency.
As shown in Figure 4; Fig. 4 be of the present invention first kind preferred embodiment, promptly in second lens 62, evenly be mixed with fluorescent material 620, this moment led chip 5 be blue-light LED chip; Said fluorescent material 620 is yellow fluorescent powder, and led chip 5 sends blue-light excited yellow fluorescent powder and sends white light; The peak wavelength of said blue-light LED chip is between 445～475nm, and the peak wavelength that said yellow fluorescent powder is stimulated is between 540～580nm.Fluorescent material 620 is blended in second lens 62, on the one hand be fluorescent material 620 away from led chip 5, can reduce the light decay of fluorescent material 620, enlarged the area that fluorescent material 620 is stimulated on the other hand, can improve light efficiency, can avoid the generation of yellow circle simultaneously.
As shown in Figure 5, shown in Figure 5 be of the present invention second kind preferred embodiment, promptly accomplish the first step; Carried out before second step, some fluorescent glue 50 on led chip 5, and toast; Said led chip 5 is a blue-light LED chip, and said fluorescent glue 50 is a yellow fluorescent glue, and the said fluorescent material 621 that is blended in second lens 62 is red fluorescence powder; The peak wavelength that said red fluorescence powder 621 is stimulated adds red fluorescence powder 621 and can improve color rendering index between 620～660nm.
The injection moulding air pressure that injection moulding forms first lens 61 in second step is between 1Mpa～3Mpa; The injection moulding air pressure that injection moulding forms second lens 62 in said the 4th step is greater than the injection moulding air pressure that forms first lens 61; Can be chosen between 2Mpa～4Mpa (air pressure in each stage is respectively greater than the air pressure in each stage of first forming lens); The mode that the injection moulding air pressure of first lens 61 and second lens 62 of being shaped all adopts staged to increase progressively gradually, and before each pressurization minibreak 1s～5s.
Like Fig. 6, shown in Figure 7; Fig. 6, the sketch map for the present invention's first lens 61 and second lens, 62 another kind of shaped structures shown in Figure 7; After i.e. first lens, 61 moulding; In pedestal 3, also be reserved with part little space 101 to be filled, can form the stickup of three aspects with the surface of sidewall, bottom and first lens 61 of pedestal 3 after 62 moulding of second lens then, thereby make second lens 62 more firm; Can farthest avoid the technological deficiencies such as bursting apart and come off of first lens 61, improve the stability of product.
The above only with convenient explanation the present invention, in not breaking away from creation spirit category of the present invention, knows this technological any simple modification and distortion that personnel did, still belongs to protection scope of the present invention.
Claims (10)
1. the high-power LED encapsulation technology of a double layer lens; May further comprise the steps: the first step: adopt ultrasonic wave plasma cleaning equipment that led support is cleaned; Then led chip is fixed in the cup bowl of led support, and led chip is carried out the conductivity connection;
Second step: aforementioned led support is put into the anchor clamps that preset adopt first lens die to form first lens in the pedestal injection moulding of led support, said first lens are silica-gel lens;
The 3rd step: the LED that will be formed with first lens puts into baking box and toasts; Baking is divided into three phases, and the phase I baking temperature is at 80 ℃～100 ℃, stoving time 60min; The second stage baking temperature is between 120 ℃～150 ℃; Stoving time is 40min, and the phase III baking temperature is between 180 ℃～200 ℃, and stoving time is 20min;
The 4th step: from baking box, take out aforementioned LED; Putting into the anchor clamps that preset after the cooling adopts second lens die outside said first lens, to form second lens through injection moulding; Said second lens are silica-gel lens, and the distance at lens top, the said second lens top to the first is between 1～3mm;
The 5th step: the LED that will be formed with second lens puts into baking box and toasts; Baking is divided into three phases, and the phase I baking temperature is at 80 ℃～100 ℃, stoving time 40min; The second stage baking temperature is between 120 ℃～150 ℃; Stoving time is 30min, and the phase III baking temperature is between 180 ℃～200 ℃, and stoving time is 15min;
The 6th step: from baking box, take out led support, detect after the cooling, beam split, pack at last.
2. the high-power LED encapsulation technology of a kind of double layer lens according to claim 1, it is characterized in that: the surface of said first lens and second lens is matsurface.
3. the high-power LED encapsulation technology of a kind of double layer lens according to claim 2 is characterized in that: evenly be mixed with fluorescent material in said second lens.
4. the high-power LED encapsulation technology of a kind of double layer lens according to claim 3, it is characterized in that: said led chip is a blue-light LED chip, said fluorescent material is yellow fluorescent powder.
5. the high-power LED encapsulation technology of a kind of double layer lens according to claim 4, it is characterized in that: the peak wavelength of said blue-light LED chip is between 445～475nm, and the peak wavelength that said yellow fluorescent powder is stimulated is between 540～580nm.
6. the high-power LED encapsulation technology of a kind of double layer lens according to claim 3 is characterized in that: accomplish the first step, carrying out before second step; On led chip, put fluorescent glue; And toast, said led chip is a blue-light LED chip, said fluorescent glue is a yellow fluorescent glue.
7. the high-power LED encapsulation technology of a kind of double layer lens according to claim 6, it is characterized in that: said fluorescent material is red fluorescence powder.
8. the high-power LED encapsulation technology of a kind of double layer lens according to claim 7, it is characterized in that: the peak wavelength that said red fluorescence powder is stimulated is between 620～660nm.
9. according to the high-power LED encapsulation technology of each described a kind of double layer lens of claim 1 to 8, it is characterized in that: the distance at lens top, the said second lens top to the first is 2mm.
10. the high-power LED encapsulation technology of a kind of double layer lens according to claim 9; It is characterized in that: the injection moulding air pressure that injection moulding forms first lens in said second step is between 1Mpa～3Mpa; The injection moulding air pressure that injection moulding forms second lens in said the 4th step is between 2Mpa～4Mpa; The mode that the injection moulding air pressure of said shaping first lens and second lens adopts staged to increase progressively gradually, and before each pressurization minibreak 1s～5s.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110304919A CN102324453A (en) | 2011-09-30 | 2011-09-30 | High-power LED (Light Emitting Diode) packaging process of double-layer lens |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110304919A CN102324453A (en) | 2011-09-30 | 2011-09-30 | High-power LED (Light Emitting Diode) packaging process of double-layer lens |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102324453A true CN102324453A (en) | 2012-01-18 |
Family
ID=45452157
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110304919A Pending CN102324453A (en) | 2011-09-30 | 2011-09-30 | High-power LED (Light Emitting Diode) packaging process of double-layer lens |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102324453A (en) |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103117353A (en) * | 2013-02-01 | 2013-05-22 | 苏州君耀光电有限公司 | Fluorescent glue and process of packaging white light LED (light-emitting diode) by same |
| CN103413885A (en) * | 2013-07-31 | 2013-11-27 | 广州硅能照明有限公司 | Manufacturing method of isolation type COB light source module |
| CN104022213A (en) * | 2014-04-11 | 2014-09-03 | 深圳市迈克光电子科技有限公司 | Remote phosphor COB integrated light source and preparation method thereof |
| CN105355757A (en) * | 2015-11-16 | 2016-02-24 | 江西华柏节能照明科技协同创新有限公司 | Integrated light engine packaging method |
| WO2017113249A1 (en) * | 2015-12-30 | 2017-07-06 | 周肇梅 | Backlight module |
| CN108281536A (en) * | 2017-12-27 | 2018-07-13 | 张红 | A kind of astigmatism type paster LED lamp bead |
| CN108717935A (en) * | 2018-05-25 | 2018-10-30 | 王加骇 | Semiconductor packaging device |
| CN109167166A (en) * | 2018-09-18 | 2019-01-08 | 四川九洲电器集团有限责任公司 | A kind of microwave radiometer and antenna dosing technology |
| CN111081849A (en) * | 2020-01-03 | 2020-04-28 | 广东省半导体产业技术研究院 | LED packaging structure and packaging method |
| US10746916B2 (en) | 2018-05-02 | 2020-08-18 | Huizhou China Star Optoelectronics Technology Co., Ltd. | Backlight module and LCD device |
| CN112885797A (en) * | 2021-01-18 | 2021-06-01 | 重庆大学 | Low-contact thermal resistance compression-type semiconductor device structure and manufacturing method |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101876406A (en) * | 2009-12-14 | 2010-11-03 | 东莞市光宇新能源科技有限公司 | Technique for manufacturing high-power light emitting diode (LED) lamp |
| CN101982892A (en) * | 2010-08-18 | 2011-03-02 | 深圳市洲明科技股份有限公司 | Packaging structure and method of high-power LED |
-
2011
- 2011-09-30 CN CN201110304919A patent/CN102324453A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101876406A (en) * | 2009-12-14 | 2010-11-03 | 东莞市光宇新能源科技有限公司 | Technique for manufacturing high-power light emitting diode (LED) lamp |
| CN101982892A (en) * | 2010-08-18 | 2011-03-02 | 深圳市洲明科技股份有限公司 | Packaging structure and method of high-power LED |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103117353A (en) * | 2013-02-01 | 2013-05-22 | 苏州君耀光电有限公司 | Fluorescent glue and process of packaging white light LED (light-emitting diode) by same |
| CN103413885A (en) * | 2013-07-31 | 2013-11-27 | 广州硅能照明有限公司 | Manufacturing method of isolation type COB light source module |
| CN104022213A (en) * | 2014-04-11 | 2014-09-03 | 深圳市迈克光电子科技有限公司 | Remote phosphor COB integrated light source and preparation method thereof |
| CN105355757A (en) * | 2015-11-16 | 2016-02-24 | 江西华柏节能照明科技协同创新有限公司 | Integrated light engine packaging method |
| WO2017113249A1 (en) * | 2015-12-30 | 2017-07-06 | 周肇梅 | Backlight module |
| CN108281536A (en) * | 2017-12-27 | 2018-07-13 | 张红 | A kind of astigmatism type paster LED lamp bead |
| US10746916B2 (en) | 2018-05-02 | 2020-08-18 | Huizhou China Star Optoelectronics Technology Co., Ltd. | Backlight module and LCD device |
| CN108717935A (en) * | 2018-05-25 | 2018-10-30 | 王加骇 | Semiconductor packaging device |
| CN108717935B (en) * | 2018-05-25 | 2020-10-30 | 江苏爱矽半导体科技有限公司 | Semiconductor packaging equipment |
| CN109167166A (en) * | 2018-09-18 | 2019-01-08 | 四川九洲电器集团有限责任公司 | A kind of microwave radiometer and antenna dosing technology |
| CN111081849A (en) * | 2020-01-03 | 2020-04-28 | 广东省半导体产业技术研究院 | LED packaging structure and packaging method |
| CN112885797A (en) * | 2021-01-18 | 2021-06-01 | 重庆大学 | Low-contact thermal resistance compression-type semiconductor device structure and manufacturing method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102324453A (en) | High-power LED (Light Emitting Diode) packaging process of double-layer lens | |
| CN103904072A (en) | High-power LED chip integrated packaging structure | |
| CN203839375U (en) | Large-power LED chip integrated packaging structure | |
| CN102878456B (en) | A kind of high-power LED lamp module of chip on board | |
| CN103050603B (en) | The manufacture method of LED encapsulation structure | |
| CN202523753U (en) | Hidden pin high-power LED (light-emitting diode) bracket and packaging structure | |
| CN202487569U (en) | LED module group | |
| CN203850298U (en) | An LED lamp filament | |
| CN101894765A (en) | Manufacturing method of LED device | |
| CN100563035C (en) | A kind of packaging technology of great power LED | |
| CN201621499U (en) | LED bulb employing integral fluorescence conversion technology | |
| CN101442093A (en) | Encapsulation method for LED | |
| CN201547559U (en) | High-power LED lamp | |
| CN203277499U (en) | LED module group | |
| CN103453349A (en) | Led lamp | |
| CN202736973U (en) | Three-dimensional cladded and packaged LED chip | |
| CN102412246A (en) | LED module based on metal-based PCB and manufacturing process thereof | |
| CN202142531U (en) | LED (Light Emitting Diode) module based on metal base PCB (Printed Circuit Board) | |
| CN202040633U (en) | Wide-area luminous light string structure | |
| CN104183581A (en) | LED module and manufacturing process thereof | |
| CN204497229U (en) | The large power white light LED of bright dipping time space aberration can be eliminated | |
| CN204230289U (en) | LED chip and the LED support for LED chip | |
| CN203589071U (en) | An LED support and an LED | |
| CN2796104Y (en) | High brightness light emitting diode packaging structure | |
| CN202252970U (en) | Modular LED lamp |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20120118 |