CN102262998B - Ion implantation device - Google Patents
Ion implantation device Download PDFInfo
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- CN102262998B CN102262998B CN2011101261575A CN201110126157A CN102262998B CN 102262998 B CN102262998 B CN 102262998B CN 2011101261575 A CN2011101261575 A CN 2011101261575A CN 201110126157 A CN201110126157 A CN 201110126157A CN 102262998 B CN102262998 B CN 102262998B
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- 238000005468 ion implantation Methods 0.000 title claims abstract description 45
- 239000000758 substrate Substances 0.000 claims abstract description 191
- 238000010884 ion-beam technique Methods 0.000 claims abstract description 100
- 230000007246 mechanism Effects 0.000 claims abstract description 14
- 238000000034 method Methods 0.000 claims description 56
- 230000008569 process Effects 0.000 claims description 56
- 230000005855 radiation Effects 0.000 claims description 3
- 238000005286 illumination Methods 0.000 abstract 1
- 238000002513 implantation Methods 0.000 description 28
- 150000002500 ions Chemical class 0.000 description 21
- 150000005837 radical ions Chemical class 0.000 description 14
- 230000009471 action Effects 0.000 description 12
- 238000010586 diagram Methods 0.000 description 12
- 230000032258 transport Effects 0.000 description 9
- 239000011521 glass Substances 0.000 description 4
- 230000000903 blocking effect Effects 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 230000036544 posture Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000003760 hair shine Effects 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002341 toxic gas Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/026—Means for avoiding or neutralising unwanted electrical charges on tube components
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26586—Bombardment with radiation with high-energy radiation producing ion implantation characterised by the angle between the ion beam and the crystal planes or the main crystal surface
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/15—Means for deflecting or directing discharge
- H01J2237/1506—Tilting or rocking beam around an axis substantially at an angle to optical axis
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Abstract
The invention provides an ion implantation device, which can substantially improve quantity of processed substrates in init time and ion implantation quantity in unit time, and can deal with the problem of large-scale substrates and avoid that the device becomes excessively large. The ion implantation device comprises a conveying mechanism (3) and a pair of ion beam illumination mechanisms (5), wherein the conveying mechanism comprises a pair of tracks (31, 32) mutually separated and parallelly arranged, panel portions of substrates having the same shape are parallelly arranged with the tracks (31, 32) along the tracks (31, 32), and the substrates (2) maintain parallel and respectively move towards opposite directions. Observed from a direction vertical to the panel portions, when substrates (2) at the tracks arrive at a preset superposition position, the substrates are basically superposed, and ion beams (B) avoid the substrates at the superposition position, and respectively pass through the moving direction side of the substrates (2) and the opposite direction of the moving direction.
Description
Technical field
The present invention relates to a kind of for the ion implantation apparatus with the Implantation substrate.
Background technology
For example,, for the characteristic expectation is attached on the parts such as glass substrate that flat-panel monitor uses, usually utilize the ion beam with shape to scan ion to substrate.
In ion implantation process as above, the long limit size of utilizing in advance the bundle section is shone greater than the maximum sized band shape ion beam of real estate board, the more whole regional crosscut ion beam that makes the panel part of substrate by conveyer is (with reference to patent documentation 1: No. 7-99224, Japanese Patent Publication communique Unexamined Patent).
By adopting this ion implantation apparatus can make the whole zone of ion beam irradiation in the panel part of substrate, thus but number and the Implantation amount of increase unit interval treatment substrate.
Yet, for a radical ion bundle as above, in the ion implantation apparatus of crosscut substrate one by one, if want on this basis to improve the disposal ability of Implantation, by changing various parameters,, such as accelerating travelling speed etc., can improve by a small margin and but be difficult to increase substantially disposal ability.
On the other hand, this ion implantation apparatus needs the disposal ability that keeps identical with the existing apparatus cardinal principle at least, also requires to tackle the maximization of substrate in recent years.That is, flat-panel monitor is gradually to large scale development, and correspondingly the size of required glass substrate also maximizes gradually, for example is about 2200mm * 2500mm.For this situation, the length dimension on the long limit of bundle section of the ion beam of existing ion implantation apparatus irradiation, greatly about the 1000mm left and right, therefore can not carry out ion with ion beam irradiation in the whole zone of the panel part of substrate as existing apparatus.
Maximize if only by increase, with the long edge lengths of the bundle section of shape ion beam, deal with substrate, with the amount that ion beam maximizes, compare, it is excessive that ion beam irradiation apparatus itself can become.In the load-bearing scope on the ground of factory that thus, is difficult to make the weight of ion implantation apparatus to remain on to be provided with described ion implantation apparatus etc.
Summary of the invention
In view of the above problems, the object of the present invention is to provide the ion implantation apparatus that can address the above problem simultaneously, but the first technical task of the present invention is to increase substantially the number of unit interval treatment substrate and the Implantation amount of unit interval, in addition, the second technical task of the present invention is to tackle the maximization of substrate in recent years, in case locking apparatus integral body is excessive.
Namely, ion implantation apparatus of the present invention comprises: conveyer, have and be separated from each other and parallel pair of tracks, make along each described track same shape substrate panel part and described parallel track and make each substrate on each track keep the posture that is parallel to each other, and each substrate is advanced respectively round about; And a pair of ion beam irradiation mechanism, the position of the substrate crosscut that the ion beam irradiation with shape is advanced on by described track at the ion beam first type surface, described first type surface is larger surface in the side parallel with described ion beam direction of advance, observe from the direction vertical with described panel part, when the substrate on each track arrives the coincidence position of regulation, each described substrate overlaps substantially, and each described ion beam avoids being positioned at the substrate of described coincidence position and direction of advance one side and the side opposite to direction of advance by described substrate respectively.
According to said structure, each substrate advances respectively round about, each described ion beam avoids being positioned at the substrate of described coincidence position and direction of advance one side and the side opposite to direction of advance by described substrate respectively, therefore, can prevent from blocking from shining the substrate that each ion beam unilateral observation is positioned at front side the substrate that is positioned at rear side, thereby prevent ion beam irradiation less than the substrate that is positioned at rear side, and can guarantee that the position beyond the coincidence position has two radical ion bundles to be radiated at respectively on each substrate all the time.
Therefore, owing to transporting simultaneously two substrates, and two radical ion bundles are passed through all the time simultaneously to different substrate ions in the position beyond described coincide point, so compare with the existing ion implantation apparatus that carries out one by one Implantation by a radical ion bundle, but can increase substantially the number of unit interval treatment substrate and the Implantation amount of unit interval.
In addition, by using two radical ion bundles, the set positions of each ion beam irradiation substrate can be become different positions, for example substrate can be divided into these two zones of the first half and Lower Half, and by each ion beam, Implantation is carried out in each zone, its result, transport also and can carry out Implantation to the whole zone of the panel part of substrate by a substrate.Therefore, need not the band shape ion beam irradiation that the long side direction of bundle section is long on large substrate.Need not to use excessive ion beam irradiation apparatus, and can use, with the size of ion beam, be in a ratio of two small-sized ion beam irradiation apparatus, thereby the weight of ion implantation apparatus integral body can be remained in the load-bearing scope on ground.
For example, if linear array two radical ion bundles and form a long ion beam with shape, due to the needs ion beam irradiation mechanism that is arranged above and below, so be subject to the impact of analyzing magnet and peristome etc., produce the zone be difficult to shine ion beam at central portion, cause can not with even ion beam be radiated on the whole zone of panel part of substrate.And in the present invention,, due to the separately irradiation of each ion beam,, so need not overlapping each ion beam irradiation mechanism, just uniform ion ground can be injected the whole zone of the panel part of substrate.
As only using small-sized ion beam irradiation mechanism and only making large-scale substrate move once, just the embodiment of ion beam irradiation in the whole zone of panel part can be observed from the direction vertical with described panel part, each ion beam staggers mutually.
In order not waste the ion beam with shape, energy maximum area ground ion, and the Implantation amount in whole zone that guarantees panel part is even, and from parallel with described panel part and with the direction of described parallel track, observe, each ion beam is adjacent and substantially link together.
Reduce in ion implantation apparatus by the volume in the room of vacuum exhaust, make described room easily guarantee vacuum degree, in addition, in order to reduce as far as possible the area that arranges of ion implantation apparatus integral body, each described ion beam is used for the process chamber internal radiation substrate after vacuum exhaust, described conveyer make described substrate in described process chamber from a rail moving to another track.
The pollution that causes in order to prevent from sneaking into atmosphere in process chamber etc., and easily guarantee the vacuum degree in process chamber, described ion implantation apparatus also comprises loadlock and treats unit room, under atmospheric pressure, substrate is transported into described loadlock, describedly treats that unit room is arranged between described loadlock and described process chamber.
The pollution that causes for the atmosphere that prevents from reliably sneaking in process chamber and prevent that gas that produces in process chamber etc. is discharged in atmosphere, is provided with vacuum valve described treating between unit room and described process chamber.
Be used for substrate is transported into next door in described process chamber or the switching number of times of vacuum valve in order to reduce as far as possible, and easily keep vacuum degree and cleannes in process chamber, described conveyer be used for making substrate along a track from described standby indoor advancing in described process chamber, and it is indoor to make described substrate advance to described standby in along another track from described process chamber, can simultaneously the substrate on each track be transported and be transported into described process chamber.
As mentioned above, according to the present invention, due to each substrate is advanced respectively round about, and make ion beam avoid each substrate in the coincidence position, shine respectively each substrate in direction of advance one side and a side opposite to direction of advance, so can prevent from because of a substrate, another substrate being blocked and causing irradiation less than ion beam.Therefore, two radical ion Shu Tongchang can give different substrates with Implantation, thereby can increase substantially treating capacity and the injection rate of the substrate that once transports.In addition, owing to using two radical ion bundles, thus staggered in the position of the described substrate of irradiation, even large-scale substrate, also can be by Implantation is carried out respectively in two zones, thus once just can be with the whole zone of Implantation., owing to can using more small-sized ion beam irradiation apparatus,, so can not cause the excessive maximization of device, thereby can tackle substrate, maximize.
Description of drawings
Fig. 1 means the schematic diagram of the ion implantation apparatus of first embodiment of the invention.
Fig. 2 is the schematic diagram with the shape ion beam of explanation the first execution mode.
Fig. 3 means the schematic action diagram of the action in the ion implantation process of the first execution mode.
Fig. 4 means the schematic diagram of the ion implantation apparatus of second embodiment of the invention.
Fig. 5 means the schematic action diagram of the action in the ion implantation process of the second execution mode.
Fig. 6 means the schematic diagram based on the injection device of the comparative example of the second execution mode.
Fig. 7 means the schematic action diagram based on the action of the comparative example of the second execution mode.
Description of reference numerals
100 ion implantation apparatuses
5 ion beam irradiation mechanisms
3 conveyers
31,32 tracks
34 overlap position
The B ion beam
Embodiment
Below, with reference to accompanying drawing, the first execution mode of the present invention is described.
As shown in Figure 1, the ion implantation apparatus 100 of the first execution mode be used for the large substrate 2 that flat-panel monitor etc. is used at the process chamber 10 internal radiation ion beam B by after vacuum exhaust, carry out Implantation.At this, the substrate 2 of present embodiment for example comprises glass substrate, scribbles the glass substrate of alignment film, the substrate of semiconductor substrate and other irradiation ion beams B.In addition, although the substrate 2 in present embodiment be shaped as rectangular thin sheet form, can be also circular.
Described ion implantation apparatus 100 comprises: process chamber 10, by the room after vacuum exhaust, is used for ion beam B is radiated at substrate 2; Treating unit room 8, is the room with described process chamber 10 adjacency, pending substrate 2 standbies such as makes; Loadlock 6, be used for treating between unit room 8 and atmosphere to pick and place substrate 2 described.Each room is the cuboid of hollow substantially, and the connecting portion between each room is by vacuum valve G(gate valve) separate.
More particularly, described ion implantation apparatus 100 comprises: conveyer 3, in described loadlock 6, describedly treat unit room 8 and described process chamber 10, with substrate 2 with two row respectively direction towards the opposite transport; Control part (not shown), control or according to this position, carry out various controls the position of the substrate 2 on described conveyer 3; And ion beam irradiation mechanism 5, a pair of ion beam B is radiated on the substrate 2 that described conveyer 3 transports described process chamber 10 is interior.
Below each several part is described.In the following description, adopt right-handed coordinate system to describe, that is, with horizontal plane as the XY plane, with vertical upward direction as Z axis.
Described conveyer 3 has and is separated from each other and parallel pair of tracks, make along each described track same shape substrate 2 panel part and described parallel track and make each substrate 2 keeping parallelism postures on each track, and each substrate is advanced in the opposite direction.
More particularly, in present embodiment, described pair of tracks comprises: the first track 31, from substrate erect device 40 successively according to described loadlock 6, describedly treat that the direction of advance of unit room 8, described process chamber 10 is advanced substrate 2, wherein, described substrate erects device 40 for making undressed substrate 2 convert from the horizontally-arranged state of level the state of erecting to; And second track 32, reversed in order with the first track 31, make by each room and processed substrate 2 direction towards the opposite advances to substrate storage device 41, wherein, substrate storage device 41 can convert substrate 2 to the horizontally-arranged state of level and storage from erecting state again.As shown in Figure 1, on the first track 31 and the second track 32, transport each substrate 2 along X-direction erecting under state, the panel part of each substrate 2 is kept towards Y direction.
In addition, described conveyer 3 make substrate 2 in described process chamber 10 from a rail moving to another track.More particularly, in the deep of process chamber 10, also comprise the 3rd track 33, described the 3rd track 33 can make substrate 2 move to the second track 32 from the first track 31, can make substrate 2 carry out u turn in process chamber 10.
In addition, in described process chamber 10, from the direction vertical with described panel part, be that Y direction is observed, the substrate 2 on each track can overlap substantially when arriving the coincidence position 34 of regulation.Specifically, as shown in Fig. 1 (b), be positioned at the process chamber 10 coincidence positions 34 of central authorities substantially, the profile of the substrate 2 on the profile that makes the substrate 2 on the first track 31 and the second track 32 is consistent.
Described control part is so-called computer, such as be used for to travelling speed and the position of each substrate 2 control, according to the position of each substrate 2 to being arranged on opening or closing of vacuum valve G between each room and controlling and the conducting of ion beam B or disconnection etc. being controlled.
Described a pair of ion beam irradiation mechanism 5 is used for being radiated at the ion beam B of shape the position of substrate 2 crosscuts that ion beam first type surface Ba advanced on described track, and wherein, described first type surface Ba is larger surface in the side parallel with the ion beam direction of advance.At this, each described ion beam irradiation mechanism 5 is described in detail, the ion beam B that penetrates from ion source 52, by analyzing magnet 56, after amount of exercise is analyzed, then penetrates with the ion beam with shape by slit 59.As shown in Figure 2, also claim banded etc. with the ion beam B(of shape) the long edge lengths Wz of bundle section more much larger than the length Wx of minor face, the part that represents with oblique line in Fig. 2 is the end face of restrainting, the represented side of Reference numeral Ba is first type surface Ba.
Each described ion beam B avoids being positioned at the substrate 2 of described coincidence position 34, respectively direction of advance one side and the side opposite to direction of advance by described substrate 2.In the present embodiment, the ion beam irradiation mechanism 5 that is arranged in direction of advance one side (accompanying drawing right side) of described coincidence position 34 is radiated at the first ion beam B on substrate 2, and the ion beam irradiation mechanism 5 that is arranged in a side opposite to direction of advance (accompanying drawing left side) is radiated at the second ion beam B on substrate 2.
In addition, as shown in Fig. 1 (b), from the direction vertical with panel part, be that Y direction is observed, each ion beam B shines mutually with staggering, utilizes each ion beam B that the panel part integral body of substrate 2 is scanned by ion beam B.In other words, from parallel with described panel part and with the direction of described parallel track, be that X-direction is observed, each ion beam B is adjacent and substantially link together.By in this way ion beam B being radiated on substrate 2, as long as in direction of advance or with the direction of advance rightabout, transport substrate 2 No. one time, just can be with the whole zone of Implantation panel part.
For the ion implantation apparatus 100 of described structure, the action with reference to the action diagram of Fig. 3 during to Implantation describes.In addition, in this action specification, with in process chamber 10 on the first track 31 and the substrate 2 that transports on the second track 32 be called first substrate, second substrate.In the situation that substrate 2 is moved on the second track 32 from the first track 31, although the title of described substrate 2 becomes second substrate by first substrate, the same substrate 2 that refers to.(a)～(f) expression of Fig. 3 is along with the position of the substrate of time variation.
As shown in Fig. 3 (a), at first make and be transported into the left side standby of the interior first substrate of process chamber 10 at the second ion beam B, and make the right side standby of second substrate at the first ion beam B, wherein, described second substrate is to inject primary ions and moved to the substrate 2 of the second track 32 from the first track 31 through each ion beam B.
Then, as shown in Fig. 3 (b), first substrate moves to the position of the second ion beam B scanning, and the zone of panel part Lower Half is injected into ion.Second substrate moves to the position of the first ion beam B scanning simultaneously, and the zone of the panel part first half is injected into ion.
As shown in Fig. 3 (c), each substrate 2 advances to direction separately respectively, and after the Implantation end was carried out in half zone, in the coincidence position 34 between the first ion beam B and the second ion beam B, each substrate 2 was seen substantially and overlapped from Y direction.Therefore, can obviously find out with reference to the accompanying drawings, the first substrate that is positioned at the last side of body can not block the ion beam B that shine to the second substrate of rear side.
Then, as shown in Fig. 3 (d), this moment is opposite with Fig. 3 (b), and first substrate moves to the position of the first ion beam B scanning, and the zone of the panel part first half is injected into ion.Second substrate moves to the position of the second ion beam B scanning simultaneously, and the zone of panel part Lower Half is injected into ion.
Then, by after ion beam B, as shown in Fig. 3 (e), first substrate advances to the deep of process chamber 10 when each substrate 2, and second substrate advances to the gateway of transporting of process chamber 10.At this moment, ion has all been injected in the whole zone of the panel part of each substrate 2.
Finally, as shown in Fig. 3 (f), open vacuum valve G, second substrate is transported to treating unit room 8 from process chamber 10, simultaneously new first substrate is transported into.In addition, the first substrate that is positioned at process chamber 10 deeps at synchronization moves to the second track 32 along the 3rd track 33.After this repeat the operation of Fig. 3 (a)～(f).That is, by making substrate 2, advance on the first track 31, the whole zone of panel part be injected into ion once after, by advancing on the second track 32, the whole zone of panel part is re-injected ion.Therefore, can further increase the Implantation amount to substrate 2, even perhaps accelerate travelling speed, also can guarantee to inject the ion concentration of expectation when leaving process chamber 10.
Hence one can see that, because each ion beam B can, simultaneously to two substrate 2 ions,, so with the situation that existing use one radical ion bundle B processes one by one, compare, can increase substantially the treating capacity of unit interval usually.In addition, in the first embodiment, substrate 2 moves to the second track 32 totals from the first track 31 and is injected into four secondary ions in process chamber 10, therefore can increase considerably the Implantation amount to a substrate 2.
In addition, from the direction with parallel track, observe two radical ion bundle B, each ion beam B is adjacent and substantially link together, therefore just can be with the zone that is equivalent to two B of the ion beam with shape on the Implantation Z-direction by transporting a substrate 2.Therefore, even large-scale substrate 2 also need not to use a long band shape ion beam B of long limit who restraints section, as long as once just ion can be injected the whole zone of the panel part of substrate 2 substantially equably.Therefore, need not to use excessive ion beam B irradiation unit, and can use small-sized ion beam B irradiation unit, thereby the weight of whole ion implantation apparatus is remained in the load-bearing scope on ground.
Therefore easily in addition, be provided with and treat unit room 8 between described loadlock 6 and described process chamber 10, in addition, each room is separated by vacuum valve G, guarantees the vacuum degree in described process chamber 10, and prevents that easily toxic gas etc. from leaking into outside.
Then, the second execution mode is described.
The first execution mode makes substrate 2 move to the second track 32 from the first track 31, and carry out u turn, yet as shown in Figure 4, the ion implantation apparatus 100 of the second execution mode does not possess makes the round structure of substrate 2 from the first track 31 to second tracks 32, and directly linear moves.
Therefore, as shown in Figure 4, centered by process chamber 10, be provided with symmetrically successively and treat that unit room 8, loadlock 6, substrate erect device 40 and substrate storage device 41.
As shown in the action diagram of Fig. 5, the ion implantation apparatus 100 of the second execution mode and the difference of the first execution mode be, only with the whole zone of Implantation panel part once.In addition, the ion implantation apparatus 100 of the second execution mode and the identical point of the first execution mode be, in process chamber 10, during except the transporting or be transported into of substrate 2 and the coincidence position 34 of substrate 2, two radical ion bundle B always are radiated on certain substrate 2.
Then, for by making substrate 2 before come in to increase substantially round about respectively the reason of the treating capacity of unit interval, contrast the situation that hypothesis the second execution mode shown in Figure 6 only transports a row substrate 2 and describe.In addition, Fig. 7 is corresponding with the action diagram of Fig. 5, means the action diagram of existing situation of the moving state of substrate 2.
(b) of (b) if of comparison diagram 5 and Fig. 7 or (d) of Fig. 5 and Fig. 7 (d) etc., can obviously find out, in the situation that only transport a row substrate 2, exist a radical ion bundle B can not be radiated at time on any substrate, and two radical ion bundle B of the ion implantation apparatus 100 of the second execution mode can ion.Hence one can see that, only has by transporting round about respectively each substrate 2, and make each ion beam B avoid being positioned at the substrate 2 that overlaps position 34 to shine, could increase substantially by present embodiment the treating capacity of unit interval.
Other execution modes are described.In each described execution mode, the size of each ion beam only can be shone the subregion of each substrate, yet can be also that the long edge lengths of ion beam can be shone the whole zone of real estate board.Such device also can increase substantially accessible number of unit interval and Implantation amount.
In addition, can be also from the direction with parallel track, be that X-direction is observed, each ion beam is partially overlapped.For example, can only make the Implantation amount of central portion of real estate board on the high side.
The structure of the process chamber shown in also can a plurality of described the second execution modes of spread configuration forms ion implant systems.In the manner described, owing to the Implantation zone can being divided into little zone, so can tackle the Implantation in the whole zone of panel part of large substrate more or change each regional Implantation amount, thereby can improve the degree of freedom of various Implantation modes.
For example, under need not the vacuum degree in process chamber is carried out the situation such as tight management, can omit the described unit room for the treatment of, but process chamber directly is connected with loadlock.
In described the first execution mode and described the second execution mode, to a substrate by once or the twice sweep ion beam carry out Implantation, carry out ion but also can carry out Multiple-Scan according to the dosage etc. of expectation.For example,, if the ion implantation apparatus of the first execution mode erects at described substrate the connection device that substrate is set between device and described substrate storage device, make substrate again return to the first track from the second track, through repeatedly finishing Implantation after circulation.In addition, can also keep first substrate and second substrate substantially to overlap in described coincidence position in process chamber, and after making respectively both repeatedly come and go fortune inlet side and deep one side, substrate is transported and is transported into process chamber, and substrate is transported to the second track from the first track.
In addition,, as long as without prejudice to purport of the present invention, can carry out various distortion or execution mode is carried out various combinations.
Claims (8)
1. ion implantation apparatus is characterized in that comprising:
Conveyer, have and be separated from each other and parallel pair of tracks, make along each described track same shape substrate panel part and described parallel track and make each substrate on each track keep the posture that is parallel to each other, and each substrate is advanced respectively round about; And
A pair of ion beam irradiation mechanism, the position of the substrate crosscut that the ion beam irradiation with shape is advanced on by described track at the ion beam first type surface, described first type surface is larger surface in the side parallel with described ion beam direction of advance,
Observe from the direction vertical with described panel part, when the substrate on each track arrives the coincidence position of regulation, each described substrate overlaps substantially, and each described ion beam avoids being positioned at the substrate of described coincidence position and direction of advance one side and the side opposite to direction of advance by described substrate respectively.
2. ion implantation apparatus according to claim 1, is characterized in that, from the direction vertical with described panel part, observes, and each ion beam staggers mutually.
3. ion implantation apparatus according to claim 2, is characterized in that, from parallel with described panel part and with the direction of described parallel track, observe, each ion beam is adjacent and substantially link together.
4. the described ion implantation apparatus of any one according to claim 1～3, is characterized in that,
Each described ion beam is used for the process chamber internal radiation substrate after vacuum exhaust,
Described conveyer make described substrate in described process chamber from a rail moving to another track.
5. ion implantation apparatus according to claim 4, it is characterized in that, described ion implantation apparatus also comprises loadlock and treat under atmospheric pressure, substrate to be transported into described loadlock by unit room, describedly treats that unit room is arranged between described loadlock and described process chamber.
6. ion implantation apparatus according to claim 5, is characterized in that, described treating, is provided with vacuum valve between unit room and described process chamber.
7. ion implantation apparatus according to claim 5, is characterized in that,
Described conveyer be used for making substrate along a track from described standby indoor advancing in described process chamber, and it is indoor to make described substrate advance to described standby in along another track from described process chamber, can simultaneously the substrate on each track be transported and be transported into described process chamber.
8. ion implantation apparatus according to claim 6, is characterized in that,
Described conveyer be used for making substrate along a track from described standby indoor advancing in described process chamber, and it is indoor to make described substrate advance to described standby in along another track from described process chamber, can simultaneously the substrate on each track be transported and be transported into described process chamber.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010120053A JP5311681B2 (en) | 2010-05-26 | 2010-05-26 | Ion implanter |
| JP2010-120053 | 2010-05-26 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102262998A CN102262998A (en) | 2011-11-30 |
| CN102262998B true CN102262998B (en) | 2013-11-20 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011101261575A Active CN102262998B (en) | 2010-05-26 | 2011-05-12 | Ion implantation device |
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| JP (1) | JP5311681B2 (en) |
| KR (1) | KR101243744B1 (en) |
| CN (1) | CN102262998B (en) |
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| KR20020025103A (en) * | 2002-01-15 | 2002-04-03 | (주)한국 티엠 | Smoking cessation agent and manufacturing method thereof |
| KR101769493B1 (en) * | 2011-12-23 | 2017-08-30 | 주식회사 원익아이피에스 | Substrate processing apparatus and substrate processing system |
| TWI524461B (en) * | 2012-02-14 | 2016-03-01 | 愛發科股份有限公司 | Ion beam irradiation apparatus |
| KR101971453B1 (en) * | 2012-11-12 | 2019-04-24 | 주식회사 원익아이피에스 | Substrate processing module and substrate processing system having the same |
| JP5733333B2 (en) * | 2013-04-05 | 2015-06-10 | 日新イオン機器株式会社 | Energy beam irradiation system |
| CN104593744A (en) * | 2013-11-01 | 2015-05-06 | 韦学运 | Automation equipment for processing shield cutter by plasma |
| CN106981540B (en) * | 2017-03-24 | 2019-07-23 | 东莞帕萨电子装备有限公司 | Ion implanting runs piece method and ion implanting runs piece system |
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| CN1195882A (en) * | 1997-04-07 | 1998-10-14 | 日本电气株式会社 | Method and apparatus for ion implantation |
| CN101061563A (en) * | 2004-09-20 | 2007-10-24 | 艾克塞利斯技术公司 | Improved ion beam utilization during scanned ion implantation |
| CN101174534A (en) * | 2006-10-31 | 2008-05-07 | 日新意旺机械股份有限公司 | Ion implanter |
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| JPS4914102B1 (en) * | 1968-12-26 | 1974-04-05 | ||
| JP2743274B2 (en) * | 1988-07-01 | 1998-04-22 | 東京エレクトロン株式会社 | Substrate processing device and substrate transfer device |
| US5053627A (en) * | 1990-03-01 | 1991-10-01 | Ibis Technology Corporation | Apparatus for ion implantation |
| JP2664121B2 (en) * | 1993-02-23 | 1997-10-15 | 株式会社ジーティシー | Ion implanter |
| JPH0799224A (en) * | 1993-09-28 | 1995-04-11 | Hitachi Ltd | Multiple-chamber type semiconductor manufacturing apparatus |
| JPH07252653A (en) * | 1994-03-17 | 1995-10-03 | Rohm Co Ltd | Ion implantation device and ion implantation method using the same |
| US7078714B2 (en) | 2004-05-14 | 2006-07-18 | Nissin Ion Equipment Co., Ltd. | Ion implanting apparatus |
| JP4901203B2 (en) * | 2005-12-12 | 2012-03-21 | 東芝モバイルディスプレイ株式会社 | Ion beam irradiation method and substrate manufacturing apparatus having thin film transistor |
| JP2009152002A (en) * | 2007-12-19 | 2009-07-09 | Nissin Ion Equipment Co Ltd | Ion beam irradiation device |
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- 2010-05-26 JP JP2010120053A patent/JP5311681B2/en active Active
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| CN1195882A (en) * | 1997-04-07 | 1998-10-14 | 日本电气株式会社 | Method and apparatus for ion implantation |
| CN101061563A (en) * | 2004-09-20 | 2007-10-24 | 艾克塞利斯技术公司 | Improved ion beam utilization during scanned ion implantation |
| CN101174534A (en) * | 2006-10-31 | 2008-05-07 | 日新意旺机械股份有限公司 | Ion implanter |
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| JP特开2009-152002A 2009.07.09 |
| JP特开平7-99224A 1995.04.11 |
Also Published As
| Publication number | Publication date |
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| KR101243744B1 (en) | 2013-03-13 |
| JP2011249096A (en) | 2011-12-08 |
| KR20110129821A (en) | 2011-12-02 |
| CN102262998A (en) | 2011-11-30 |
| JP5311681B2 (en) | 2013-10-09 |
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