CN102122691A - LED (light-emitting diode) epitaxial wafer, LED structure and formation method of LED structure - Google Patents
LED (light-emitting diode) epitaxial wafer, LED structure and formation method of LED structure Download PDFInfo
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Abstract
The invention provides an LED (light-emitting diode) epitaxial wafer which comprises a substrate, a first porous structure layer formed on the top layer of the substrate, a second porous structure layer formed on the first porous structure layer and an LED structure layer formed on the second porous structure layer, wherein the porosity and aperture of the second porous structure layer are smaller than those of the first porous structure layer, and the LED structure layer at least comprises a first-type semiconductor layer, a luminous layer and a second-type semiconductor layer. An LED structure which has the characteristics of large porosity and great thermal mismatch between an epitaxy on porous silicon and a Si (silicon) material is adopted, thereby enabling a weak porous silicon layer to deform partially, releasing thermal mismatch stress, ensuring the integrity of the epitaxial LED structure, forming the large-size epitaxial LED structure, and improving the quality of an epitaxial crystal of the LED structure layer through the second porous structure layer.
Description
Technical field
The present invention relates to light-emitting diode (light emitting diode, LED) technical field, the formation method of particularly a kind of LED epitaxial wafer, LED structure and LED structure.
Background technology
In recent years, LED is long with its life-span, luminous efficiency is high, volume is little, sturdy and durable, color abundant, is widely used in fields such as display screen, backlight, special lighting.The core of LED is the LED epitaxial wafer, and its primary structure comprises: substrate, resilient coating, n type semiconductor layer, luminescent layer, electronic barrier layer, p type semiconductor layer.As the luminescent layer of LED epitaxial wafer core between n type semiconductor layer and p type semiconductor layer, the PN junction that the interface of p type semiconductor layer and n type semiconductor layer is constituted.Yet because Al
2O
3(sapphire) or SiC substrate are very expensive, and therefore present LED is very expensive.
Therefore how on other more cheap substrates, to make the LED device and just become problem demanding prompt solution.Because the Si material is cheap, therefore technical maturity, and diameter wafers is arranged, has occurred much using different materials based on the application of Si material as application needs such as photoelectricity, microwaves at present, as GaN etc.But because there are very big thermal stress mismatch in Si material and these III-V group iii v compound semiconductor materials, the thermal stress mismatch will can cause that be full of cracks (Crack) appears in film when big epitaxial thickness, the film quality that extension is come out is not good, therefore limit growth for Thin Film thickness and growth quality, caused the Si material substrate not to be applied in well in the LED device.
Summary of the invention
Purpose of the present invention is intended to solve at least one of above-mentioned technological deficiency, has proposed the formation method of a kind of LED epitaxial wafer, LED structure and LED structure especially.
For achieving the above object, one aspect of the present invention has proposed a kind of LED epitaxial wafer, comprising: substrate; Be formed on first porous structure layer on the described substrate top layer; Be formed on second porous structure layer on described first porous structure layer, wherein, porosity in described second porous structure layer and aperture are all less than porosity and aperture in described first porous structure layer; With the LED structure sheaf that is formed on described second porous structure layer, wherein, comprise first type semiconductor layer, luminescent layer and second type semiconductor layer among the described LED structure sheaf at least.
In one embodiment of the invention, also comprise: be formed on the patterned structures layer between described second porous structure layer and the described LED structure sheaf.
In one embodiment of the invention, also comprise: be formed on the 3rd porous structure layer between described first porous structure layer and the described substrate, porosity in described the 3rd porous structure layer and aperture are all less than porosity and aperture in described first porous structure layer.
In one embodiment of the invention, comprise a plurality of first areas and the interval second area between described two first areas in described first porous structure layer, wherein, the porosity of described first area and aperture are all greater than the porosity and the aperture of described second area.
In one embodiment of the invention, also comprise: be formed on the AlN resilient coating between described second porous structure layer and the described LED structure sheaf.
The present invention has also proposed a kind of formation method of LED epitaxial wafer on the other hand, may further comprise the steps: substrate is provided; Form first porous structure layer and second porous structure layer on described substrate top layer, wherein, porosity in described second porous structure layer and aperture are all less than porosity and aperture in described first porous structure layer; With formation LED structure sheaf on described second porous structure layer, wherein, comprise first type semiconductor layer, luminescent layer and second type semiconductor layer among the described LED structure sheaf at least.
In one embodiment of the invention, also comprise: between described second porous structure layer and described LED structure sheaf, form one deck patterned structures layer at least.
In one embodiment of the invention, also comprise: between described first porous structure layer and described substrate, form the 3rd porous structure layer, wherein, porosity in described the 3rd porous structure layer and aperture are all less than porosity and aperture in described first porous structure layer.
In one embodiment of the invention, comprise a plurality of first areas and the interval second area between described two first areas in described first porous structure layer, wherein, the porosity of described first area and aperture are all greater than the porosity and the aperture of described second area.
In one embodiment of the invention, also comprise: between described second porous structure layer and described LED structure sheaf, form the AlN resilient coating.
The embodiment of the invention has also proposed a kind of formation method of LED structure more on the one hand, comprising: form the LED epitaxial wafer by above-described method; On second type semiconductor layer of described LED epitaxial wafer, form second electrode; With the upset of described epitaxial wafer and be transferred to substrate; Remove first porous structure layer in the described epitaxial wafer and second porous structure layer and described substrate to expose described first type semiconductor layer; On described first type semiconductor layer, form first electrode layer.
In one embodiment of the invention, first porous structure layer in the described removal epitaxial wafer and second porous structure layer and substrate further comprise: peel off the described substrate in the described epitaxial wafer, and continue to regenerate new porous structure layer and LED structure sheaf to form new epitaxial wafer on described substrate; Remove described first porous structure layer and described second porous structure layer.
In one embodiment of the invention, described substrate is a metal substrate, and described first electrode layer is a transparency electrode.
In one embodiment of the invention, also comprise: on described metal substrate, form reflector layer.
In one embodiment of the invention, described substrate is a glass substrate.
In one embodiment of the invention, described glass substrate has the through hole that a plurality of and described second electrode pair is answered, and is filled with electric conducting material in the described through hole.
In one embodiment of the invention, described substrate is a ceramic substrate.
In one embodiment of the invention, described ceramic substrate has the through hole that a plurality of and described second electrode pair is answered, and is filled with electric conducting material in the described through hole.
In one embodiment of the invention, also comprise: on described ceramic substrate, form reflector layer.
In one embodiment of the invention, before forming first electrode layer on described first type semiconductor layer, also comprise: roughening is carried out on the surface to described first type semiconductor layer.
The embodiment of the invention has also proposed a kind of LED structure more on the one hand, forms by aforesaid method.
The embodiment of the invention has the following advantages:
1, the present invention adopts extension and the big LED structure of Si material thermal mismatching on the big porous silicon of porosity, thereby can partial deformation take place in cooling procedure by the porous silicon layer of fragility and discharge thermal mismatch stress, guarantee LED structure intact of extension, can extension go out large-sized LED structure.
2, can control the release of thermal mismatch stress by patterned porous silicon (being the porous silicon structure of a plurality of first areas and second area), provide favorable mechanical to support, further improve the quality of epitaxial film.
3, in embodiments of the present invention, when forming the LED structure, substrate and porous structure layer are removed, thereby can be avoided, limit as heat radiation etc. because the light tight LED of causing structures such as Si substrate are restricted, the LED structure can be made vertical stratification in addition, thereby increase light-emitting area.
4, in embodiments of the present invention, the LED structure can be turn to substrate arbitrarily, for example metal substrate, glass substrate or ceramic substrate.Metal substrate can be used as an electrode, thereby forms the vertical electrode structure of LED easily, and the glass substrate printing opacity can be with it as exiting surface, and ceramic substrate has good thermal characteristics.
5, in embodiments of the present invention, when forming the LED structure, the recycling of Si substrate promptly can be regenerated new LED structure sheaf once more on the Si substrate.
6, because ceramic substrate and glass substrate are insulator, therefore in embodiments of the present invention, can on ceramic substrate and glass substrate, through hole be set, thereby be beneficial to the vertical stratification of making the two sides extraction electrode.
7, in addition, in embodiments of the present invention, because of epitaxial layer quality on less aperture and the fine and close porous layer better, can improve the epitaxial crystal quality of LED structure sheaf by the second less and fine and close porous structure layer of aperture, as surface roughness and defect concentration etc., and the porous layer of larger aperture is beneficial to and peels off, and can come at the bottom of the peeling liner and epitaxial loayer by the first bigger porous layer of aperture.
8, forming reflector layer on substrate can reflect away the light that LED produces, thereby increases the light extraction efficiency of LED.
9, before forming first electrode layer, the total reflection that roughened can reduce light is carried out on the surface of first type semiconductor layer, increased light extraction efficiency.
10, the AlN resilient coating between second porous structure layer and described LED structure sheaf can suppress the epitaxial interface defective effectively, prevents that extension from forming polycrystalline structure and antiphase domain structure etc., thereby improves epitaxial layer quality.
Aspect that the present invention adds and advantage part in the following description provide, and part will become obviously from the following description, or recognize by practice of the present invention.
Description of drawings
Above-mentioned and/or additional aspect of the present invention and advantage are from obviously and easily understanding becoming the description of embodiment below in conjunction with accompanying drawing, wherein:
Fig. 1 is the structure chart of the LED epitaxial wafer of the embodiment of the invention;
Fig. 2 is the structure chart of the LED epitaxial wafer of another embodiment of the present invention;
Fig. 3 is the structure chart of the LED epitaxial wafer of another embodiment of the present invention;
Fig. 4 is the structure chart of the LED epitaxial wafer of yet another embodiment of the invention;
Fig. 5 is the structure chart of the LED epitaxial wafer of another embodiment of the present invention;
Fig. 6 is the structure chart of the LED epitaxial wafer of yet another embodiment of the invention;
Fig. 7-9 is the formation method intermediate steps schematic diagram of the LED epitaxial wafer of the embodiment of the invention;
Figure 10-14 is the intermediate steps schematic diagram of formation method of the LED structure of the embodiment of the invention.
Embodiment
Describe embodiments of the invention below in detail, the example of described embodiment is shown in the drawings, and wherein identical from start to finish or similar label is represented identical or similar elements or the element with identical or similar functions.Below by the embodiment that is described with reference to the drawings is exemplary, only is used to explain the present invention, and can not be interpreted as limitation of the present invention.
Disclosing hereinafter provides many different embodiment or example to be used for realizing different structure of the present invention.Of the present invention open in order to simplify, hereinafter parts and the setting to specific examples is described.Certainly, they only are example, and purpose does not lie in restriction the present invention.In addition, the present invention can be in different examples repeat reference numerals and/or letter.This repetition is in order to simplify and purpose clearly, itself not indicate the relation between various embodiment that discuss of institute and/or the setting.In addition, various specific technology and the examples of material that the invention provides, but those of ordinary skills can recognize the property of can be applicable to of other technologies and/or the use of other materials.In addition, first feature described below second feature it " on " structure can comprise that first and second features form the embodiment of direct contact, can comprise that also additional features is formed on the embodiment between first and second features, such first and second features may not be direct contacts.
As shown in Figure 1, be the structure chart of the LED epitaxial wafer of the embodiment of the invention.This LED epitaxial wafer 1000 comprises substrate 1100, first porous structure layer 1200, second porous structure layer 1300 and LED structure sheaf 1400, wherein, comprise first type semiconductor layer 1410, luminescent layer 1420 and second type semiconductor layer 1430 among the LED structure sheaf 1400.In one embodiment of the invention, substrate 1100 can be and contains the Si substrate, for example body Si substrate, SOI substrate etc.Wherein, porosity in second porous structure layer 1300 and aperture are all less than porosity and aperture in first porous structure layer 1200, can discharge thermal mismatch stress by first porous structure layer 1200 like this, and improve the epitaxial crystal quality of LED structure sheaf 1400 by second porous structure layer 1300, as surface roughness and defect concentration etc.Wherein, first type semiconductor layer 1410 can be N type GaN layer, luminescent layer 1420 can be InGaN/GaN multiple quantum well light emitting layer, second type semiconductor layer 1430 can be P type GaN layer, wherein, also can comprise the P type AIGaN layer between the luminescent layer 1420 and second type semiconductor layer 1430, this P type AIGaN layer can be used as barrier layer.In one embodiment of the invention, second porous structure layer 1300 can be formed pure Si after 1200 annealing of first porous structure layer.Usually, the thinner thickness of second porous structure layer 1300 is about in ten nm, thereby is convenient to the conduction of stress.
As shown in Figure 2, be the structure chart of the LED epitaxial wafer of another embodiment of the present invention.This LED epitaxial wafer 1000 also comprises the patterned structures layer 1500 that is formed between second porous structure layer 1300 and the LED structure sheaf 1400.This patterned structures layer 1500 can improve the interfacial state between the LED structure sheaf 1400 and second porous structure layer 1300.
As shown in Figure 3, be the structure chart of the LED epitaxial wafer of another embodiment of the present invention.This LED epitaxial wafer 1000 also comprises the 3rd porous structure layer 1600 that is formed between first porous structure layer 1200 and the substrate 1100, wherein, porosity in the 3rd porous structure layer 1600 and aperture are all less than porosity and aperture in first porous structure layer 1200.In an embodiment of the present invention, can form first porous structure layer 1200, second porous structure layer 1300 and the 3rd porous structure layer 1600 by anode oxidation method.Particularly, can form, do not repeat them here by the mode of injection among substrate or control oxidation current.
As shown in Figure 4, be the structure chart of the LED epitaxial wafer of yet another embodiment of the invention.Wherein, comprise a plurality of first areas 1210 and the second area 1220 between two first areas 1210 at interval in first porous structure layer 1200, wherein, the porosity of first area 1210 and aperture are all greater than the porosity and the aperture of second area 1220.Can control the release of thermal mismatch stress like this by patterned porous silicon (being the porous silicon structure of a plurality of first areas and second area), provide favorable mechanical to support, further improve the quality of epitaxial film.As shown in Figure 5, be the structure chart of the LED epitaxial wafer of another embodiment of the present invention.In this embodiment, also comprise the 3rd porous structure layer 1600,, can in subsequent technique, remove first porous structure layer 1200 at an easy rate by the stress difference between the 3rd porous structure layer 1600 and first porous structure layer 1200.
As shown in Figure 6, be the structure chart of the LED epitaxial wafer of yet another embodiment of the invention.This LED epitaxial wafer 1000 also comprises the AlN resilient coating 1700 that is formed between second porous structure layer 1300 and the LED structure sheaf 1400.Certainly in other embodiments of the invention, this AlN resilient coating 1700 also can be formed between patterned structures layer 1500 and the LED structure sheaf 1400.
Shown in Fig. 7-9, be the formation method intermediate steps schematic diagram of the LED epitaxial wafer of the embodiment of the invention, this method may further comprise the steps:
Step S101 provides substrate 1100.
Step S102, on substrate 1100 top layers, form first porous structure layer 1200 and second porous structure layer 1300, as shown in Figure 7, wherein, porosity in second porous structure layer 1300 and aperture are all less than porosity and aperture in first porous structure layer 1200.In one embodiment of the invention, comprise a plurality of first areas 1210 and the interval second area 1220 between two first areas 1210 in first porous structure layer 1200, wherein, the porosity of first area 1210 and aperture are all greater than the porosity and the aperture of second area 1220.Wherein, in an embodiment of the present invention, the width of second area 1220 is less.
In a preferred embodiment of the invention, also can between second porous structure layer 1300 and LED structure sheaf 1400, form patterned structures layer 1500.This patterned structures layer 1500 can improve the interfacial state between the LED structure sheaf 1400 and second porous structure layer 1300.
In another preferred embodiment of the present invention, also can between first porous structure layer 1200 and substrate 1100, form the 3rd porous structure layer 1600, wherein, porosity in the 3rd porous structure layer 1600 and aperture are all less than porosity and aperture in first porous structure layer 1200.In an embodiment of the present invention, can form first porous structure layer 1200, second porous structure layer 1300 and the 3rd porous structure layer 1600 by anode oxidation method.Particularly, can form, do not repeat them here by the mode of injection among substrate or control oxidation current.
Step S103 forms AlN resilient coating 1700, as shown in Figure 8 on second porous structure layer 1300.
Step S104 forms LED structure sheaf 1400 on AlN resilient coating 1700, as shown in Figure 9, wherein, comprise first type semiconductor layer 1410, luminescent layer 1420 and second type semiconductor layer 1430 among the LED structure sheaf 1400 at least.Wherein, first type semiconductor layer 1410 can be N type GaN layer, luminescent layer 1420 can be InGaN/GaN multiple quantum well light emitting layer, second type semiconductor layer 1430 can be P type GaN layer, wherein, also can comprise the P type AIGaN layer between the luminescent layer 1420 and second type semiconductor layer 1430, this P type AIGaN layer can be used as barrier layer.
Shown in Figure 10-14, be the intermediate steps schematic diagram of the formation method of the LED structure of the embodiment of the invention, this method may further comprise the steps:
Step S201 forms the LED epitaxial wafer, and this LED epitaxial wafer is aforesaid epitaxial wafer 1000.
Step S202 forms second electrode 2100, as shown in figure 10 on second type semiconductor layer 1430 of LED epitaxial wafer.
Step S203 is with epitaxial wafer upset and be transferred to substrate 2200, as shown in figure 11.In one embodiment of the invention, described transfer is meant epitaxial wafer bonding or pressure welding to substrate 2200.In one embodiment of the invention, this substrate 2200 can be metal substrate, glass substrate or ceramic substrate.When adopting glass substrate or ceramic substrate, can on glass substrate or ceramic substrate, form a plurality of through holes 2210 in advance, each through hole 2210 is corresponding with a LED unit, the formation metal just can connect the metal 2220 at the glass substrate or the ceramic substrate back side afterwards in through hole like this, thereby helps to form the vertical electrode structure of LED.In an embodiment of the present invention, through hole 2210 can be different shape, for example circular, square, rectangle, rhombus etc., and among through hole 2210, be filled with electric conducting material.In an embodiment of the present invention, if adopt the light-proof material of metal substrate or this class of ceramic substrate, then need on metal substrate or ceramic substrate, form reflector layer.In one embodiment of the invention, because the size of through hole 2210 is bigger, the light extraction efficiency of LED may be influenced, therefore also reflector layer can be on glass substrate, formed for glass substrate.Certainly in other embodiments of the invention, the LED device that also can glass substrate forms two-sided bright dipping.
Step S204, first porous structure layer 1200 in the removal epitaxial wafer and second porous structure layer 1300 and substrate 1100 are to expose first type semiconductor layer 1410, as shown in figure 12.In other embodiments of the invention, also comprise removal AlN resilient coating 1700.In an embodiment of the present invention, described place to go be meant peel off, mode such as burn into polishing.In a preferred embodiment of the invention, at the bottom of can first peeling liner 1100, and continue on substrate 1100, to regenerate new porous structure layer and LED structure sheaf to form new epitaxial wafer, thereby can also reuse this substrate 1100, promptly on this substrate 1100, regenerate new LED layer structure once more.The present invention can greatly reduce device cost like this.In an embodiment of the present invention, also can comprise reflector layer 2300.
Step S205 carries out roughening to form matte layer 2400, as shown in figure 13 to the surface of first type semiconductor layer 1410.
Step S206 forms first electrode layer 2300, as shown in figure 14 on the matte layer 2400 of first type semiconductor layer 1410.
The embodiment of the invention has also proposed a kind of LED structure more on the one hand, by the LED structure of aforesaid method formation, as shown in figure 14.
The embodiment of the invention has the following advantages:
1, the present invention adopts extension and the big LED structure of Si material thermal mismatching on the big porous silicon of porosity, thereby can partial deformation take place in cooling procedure by the porous silicon layer of fragility and discharge thermal mismatch stress, guarantee LED structure intact of extension, can extension go out large-sized LED structure.
2, can control the release of thermal mismatch stress by patterned porous silicon (being the porous silicon structure of a plurality of first areas and second area), provide favorable mechanical to support, further improve the quality of epitaxial film.
3, in embodiments of the present invention, when forming the LED structure, substrate and porous structure layer are removed, thereby can be avoided, limit as heat radiation etc. because the light tight LED of causing structures such as Si substrate are restricted, the LED structure can be made vertical stratification in addition, thereby increase light-emitting area.
4, in embodiments of the present invention, the LED structure can be turn to substrate arbitrarily, for example metal substrate, glass substrate or ceramic substrate.Metal substrate can be used as an electrode, thereby forms the vertical electrode structure of LED easily, and the glass substrate printing opacity can be with it as exiting surface, and ceramic substrate has good thermal characteristics.
5, in embodiments of the present invention, when forming the LED structure, the recycling of Si substrate promptly can be regenerated new LED structure sheaf once more on the Si substrate.
6, because ceramic substrate and glass substrate are insulator, therefore in embodiments of the present invention, can on ceramic substrate and glass substrate, through hole be set, thereby be beneficial to the vertical stratification of making the two sides extraction electrode.
7, in addition, better because of epitaxial layer quality on less aperture and the fine and close porous layer in embodiments of the present invention, can improve the epitaxial crystal quality of LED structure sheaf by the second less and fine and close porous structure layer of aperture, as surface roughness and defect concentration etc.; And the porous layer of larger aperture is beneficial to and peels off, and can come at the bottom of the peeling liner and epitaxial loayer by the first bigger porous layer of aperture.
8, forming reflector layer on substrate can reflect away the light that LED produces, thereby increases the light extraction efficiency of LED.
9, before forming first electrode layer, the total reflection that roughened can reduce light is carried out on the surface of first type semiconductor layer, increased light extraction efficiency.
10, the AlN resilient coating between second porous structure layer and described LED structure sheaf can suppress the epitaxial interface defective effectively, prevents that extension from forming polycrystalline structure and antiphase domain structure etc., thereby improves epitaxial layer quality.
Although illustrated and described embodiments of the invention, for the ordinary skill in the art, be appreciated that without departing from the principles and spirit of the present invention and can carry out multiple variation, modification, replacement and modification that scope of the present invention is by claims and be equal to and limit to these embodiment.
Claims (21)
1. a LED epitaxial wafer is characterized in that, comprising:
Substrate;
Be formed on first porous structure layer on the described substrate top layer;
Be formed on second porous structure layer on described first porous structure layer, wherein, porosity in described second porous structure layer and aperture are all less than porosity and aperture in described first porous structure layer; With
Be formed on the LED structure sheaf on described second porous structure layer, wherein, comprise first type semiconductor layer, luminescent layer and second type semiconductor layer among the described LED structure sheaf at least.
2. LED epitaxial wafer as claimed in claim 1 is characterized in that, also comprises:
Be formed on the patterned structures layer between described second porous structure layer and the described LED structure sheaf.
3. LED epitaxial wafer as claimed in claim 1 or 2 is characterized in that, also comprises:
Be formed on the 3rd porous structure layer between described first porous structure layer and the described substrate, porosity in described the 3rd porous structure layer and aperture are all less than porosity and aperture in described first porous structure layer.
4. LED epitaxial wafer as claimed in claim 1 or 2, it is characterized in that, comprise a plurality of first areas and the interval second area between described two first areas in described first porous structure layer, wherein, the porosity of described first area and aperture are all greater than the porosity and the aperture of described second area.
5. LED epitaxial wafer as claimed in claim 1 or 2 is characterized in that, also comprises:
Be formed on the AlN resilient coating between described second porous structure layer and the described LED structure sheaf.
6. the formation method of a LED epitaxial wafer is characterized in that, may further comprise the steps:
Substrate is provided;
Form first porous structure layer and second porous structure layer on described substrate top layer, wherein, porosity in described second porous structure layer and aperture are all less than porosity and aperture in described first porous structure layer; With
On described second porous structure layer, form the LED structure sheaf, wherein, comprise first type semiconductor layer, luminescent layer and second type semiconductor layer among the described LED structure sheaf at least.
7. the formation method of LED epitaxial wafer as claimed in claim 6 is characterized in that, also comprises:
Between described second porous structure layer and described LED structure sheaf, form one deck patterned structures layer at least.
8. as the formation method of claim 6 or 7 described LED epitaxial wafers, it is characterized in that, also comprise:
Form the 3rd porous structure layer between described first porous structure layer and described substrate, wherein, porosity in described the 3rd porous structure layer and aperture are all less than porosity and aperture in described first porous structure layer.
9. as the formation method of claim 6 or 7 described LED epitaxial wafers, it is characterized in that, comprise a plurality of first areas and the interval second area between described two first areas in described first porous structure layer, wherein, the porosity of described first area and aperture are all greater than the porosity and the aperture of described second area.
10. as the formation method of claim 6 or 7 described LED epitaxial wafers, it is characterized in that, also comprise:
Between described second porous structure layer and described LED structure sheaf, form the AlN resilient coating.
11. the formation method of a LED structure is characterized in that, comprising:
Form the LED epitaxial wafer by each described method of claim 6-10;
On second type semiconductor layer of described LED epitaxial wafer, form second electrode;
With the upset of described epitaxial wafer and be transferred to substrate;
Remove first porous structure layer, second porous structure layer and described substrate in the described epitaxial wafer to expose described first type semiconductor layer;
On described first type semiconductor layer, form first electrode layer.
12. the formation method of LED structure as claimed in claim 11 is characterized in that, first porous structure layer in the described removal epitaxial wafer and second porous structure layer and substrate further comprise:
Peel off the described substrate in the described epitaxial wafer, and continue on described substrate, to regenerate new porous structure layer and LED structure sheaf to form new epitaxial wafer;
Remove described first porous structure layer and described second porous structure layer.
13. the formation method of LED structure as claimed in claim 11 is characterized in that, also comprises:
Removal is formed on the AlN resilient coating between described second porous structure layer and the described LED structure sheaf.
14. the formation method of LED structure as claimed in claim 11 is characterized in that, described substrate is a metal substrate.
15. the formation method of LED structure as claimed in claim 11 is characterized in that, described substrate is a glass substrate.
16. the formation method of LED structure as claimed in claim 15 is characterized in that, described glass substrate has the through hole that a plurality of and described second electrode pair is answered, and is filled with electric conducting material in the described through hole.
17. the formation method of LED structure as claimed in claim 11 is characterized in that, described substrate is a ceramic substrate.
18. the formation method of LED structure as claimed in claim 17 is characterized in that, described ceramic substrate has the through hole that a plurality of and described second electrode pair is answered, and is filled with electric conducting material in the described through hole.
19. the formation method as claim 14,15 or 17 described LED structures is characterized in that, also comprises:
On described metal substrate, described glass substrate or described ceramic substrate, form reflector layer.
20. the formation method of LED structure as claimed in claim 11 is characterized in that, before forming first electrode layer on described first type semiconductor layer, also comprises:
Roughening is carried out on surface to described first type semiconductor layer.
21. a LED structure is characterized in that, forms by each described method of claim 11-20.
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| CN201110021061.2A CN102122691B (en) | 2011-01-18 | 2011-01-18 | LED (light-emitting diode) epitaxial wafer, LED structure and formation method of LED structure |
| PCT/CN2011/082174 WO2012065536A1 (en) | 2010-11-15 | 2011-11-14 | Semiconductor structure and method for forming the same |
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| CN201110021061.2A CN102122691B (en) | 2011-01-18 | 2011-01-18 | LED (light-emitting diode) epitaxial wafer, LED structure and formation method of LED structure |
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| CN114695078A (en) * | 2020-12-28 | 2022-07-01 | 英飞凌科技股份有限公司 | Semiconductor structure with one or more support structures |
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