CN102110759A - Structure and method for packaging light-emitting diode (LED) - Google Patents
Structure and method for packaging light-emitting diode (LED) Download PDFInfo
- Publication number
- CN102110759A CN102110759A CN2009103122300A CN200910312230A CN102110759A CN 102110759 A CN102110759 A CN 102110759A CN 2009103122300 A CN2009103122300 A CN 2009103122300A CN 200910312230 A CN200910312230 A CN 200910312230A CN 102110759 A CN102110759 A CN 102110759A
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- China
- Prior art keywords
- light
- emitting diode
- carbon nano
- backlight unit
- substrate
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
- H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The invention relates to a structure for packaging a light-emitting diode (LED), which comprises a substrate, at least one LED chip, a packaging silicone layer and a carbon nanotube thin-film arranged on the substrate. At least two conducting regions that are spaced with each other are formed on the carbon nanotube thin-film, the two electrodes of the at least one LED chip are electrically connected with the at least two conducting regions respectively, and the carbon nanotube thin-film and the LED chip are covered by the packaging silicone layer. In the LED packaging structure, the carbon nanotube thin-film with an axial heat conductivity larger than 6,600 W/m.K is used as a conducting layer, and greatly improves the heat dissipation performance of the LED packaging structure. The packaging silicone layer can be filled in the space among the plurality of conducting regions, so that the insulating property among the conducting regions is improved, and the LED chip and the carbon nanotube thin-film are tightly bonded on the substrate.
Description
Technical field
The present invention relates to a kind of package structure for LED and method for packing thereof.
Background technology
Owing to have the characteristic of high benefit, and in automobile, traffic signal lamp indication, screen display, even be used widely by field such as illumination as light emitting source for light-emitting diode.During light-emitting diode work, can produce big calorimetric.If untimely heat radiation will influence the performance of light-emitting diode, even light-emitting diode is damaged because of overheated.Therefore, light-emitting diode need adopt different encapsulating structures, to improve its radiating effect.
A kind of package structure for LED, it comprises substrate, conductive layer, encapsulation glue-line, light-emitting diode chip for backlight unit, two gold threads, metab and glass lenss.The reverse side of this substrate is printed with circuit and pad.This conductive layer is formed at the front of this substrate by the method for electro-coppering or silver.This light-emitting diode chip for backlight unit is bonded on this conductive layer.By gold thread this light-emitting diode chip for backlight unit and conductive layer are electrically connected.This metab is provided with around this light-emitting diode chip for backlight unit, and the full surface electrical of this metab is coated with silver layer.This glass lens is placed on the metab.
Is the conductive layer of above-mentioned package structure for LED formed at the front of this substrate by the method for electro-coppering or silver, yet the thermal conductivity of copper or silver is about 380 watts/meter? Kelvin, its heat dispersion is not good.And the metal base of above-mentioned package structure for LED is unfavorable for the light-emitting diode chip for backlight unit heat radiation around this light-emitting diode chip for backlight unit.
Summary of the invention
In view of above-mentioned condition, be necessary to provide a kind of package structure for LED and method for packing thereof of good heat dispersion performance.
A kind of package structure for LED, it comprise substrate, at least one light-emitting diode chip for backlight unit, be arranged at the carbon nano-tube film on the substrate and be covered in carbon nano-tube film and light-emitting diode chip for backlight unit on the encapsulation glue-line.Be formed with at least two conductive regions of space on the carbon nano-tube film.Each light-emitting diode chip for backlight unit comprises two electrodes, and two electrodes of this at least one light-emitting diode chip for backlight unit correspondence respectively are electrically connected at least two conductive regions.
A kind of light emitter diode seal method, it comprises the steps: to provide a substrate and at least two light-emitting diode chip for backlight unit, and each light-emitting diode chip for backlight unit comprises two electrodes; One deck carbon nano-tube film is set on substrate; On carbon nano-tube film, form at least four conductive regions of space; Two electrode pairs of at least two light-emitting diode chip for backlight unit should be electrically connected at least four conductive regions; On carbon nano-tube film and at least two light-emitting diode chip for backlight unit, apply one deck encapsulation glue-line.
A kind of light emitter diode seal method, it comprises the steps: to provide a substrate and a light-emitting diode chip for backlight unit, and light-emitting diode chip for backlight unit comprises two electrodes; One deck carbon nano-tube film is set on substrate; On carbon nano-tube film, form two conductive regions of space; Two electrode pairs of light-emitting diode chip for backlight unit should be electrically connected on two conductive regions; On carbon nano-tube film and light-emitting diode chip for backlight unit, apply one deck encapsulation glue-line.
Above-mentioned lumination of light emitting diode diode package structure adopts carbon nano-tube film as conductive layer, is the axial thermal conductivity rate of carbon nano-tube greater than 6600 watts/meter? Kelvin, the heat dispersion of its bigger raising package structure for LED.Simultaneously, in the process of preparation carbon nano-tube film, can directly form the conductive region of space according to design in advance, need not to electroplate or printed conductive layer on substrate, therefore, above-mentioned package structure for LED is made more convenient.The encapsulation glue-line can be filled between a plurality of conductive regions, to increase the insulating properties between the conductive region, simultaneously, light-emitting diode chip for backlight unit and carbon nano-tube film is closely sticked on the substrate.
Description of drawings
Fig. 1 is the generalized section of the package structure for LED of embodiment of the present invention one.
Fig. 2 is the generalized section of the package structure for LED of embodiment of the present invention two.
Fig. 3 is the flow chart of light emitter diode seal method of the present invention.
Fig. 4 is the flow chart of another method for packing of light-emitting diode of the present invention.
The main element symbol description
| |
10 |
| Carbon nano- |
20 |
| Groove | 21 |
| |
23 |
| Light-emitting diode chip for |
30 |
| Electrode | 31、32 |
| The encapsulation glue- |
40 |
| Package structure for |
100、101 |
Embodiment
Below in conjunction with drawings and the embodiments package structure for LED of the present invention and method for packing thereof are described in further detail.
See also Fig. 1, the package structure for LED 100 of embodiment of the present invention one, it is used for many light-emitting diodes composition arrays and uses together.Encapsulation LED encapsulating structure 100 comprises substrate 10, carbon nano-tube film 20, at least two light-emitting diode chip for backlight unit 30 and encapsulation glue-lines 40.Carbon nano-tube film 20 is tiled on the substrate 10.Offer a plurality of grooves 21 on the carbon nano-tube film 20, to form at least four conductive regions 23 of space.The corresponding respectively a plurality of different conductive region 23 that is electrically connected carbon nano-tube film 20 of the electrode 31,32 of at least two light-emitting diode chip for backlight unit 30.Encapsulation glue-line 40 contains fluorescent material, and it is coated on the carbon nano-tube film 20, and complete covering luminousing diode chip 30.Encapsulation glue-line 40 is filled in a plurality of grooves 21.In the present embodiment, substrate 10 is a ceramic substrate.
Above-mentioned package structure for LED 100 also is used for single light-emitting diode to be used separately, at this moment, package structure for LED 100 need be cut into a plurality of single package structure for LED.
See also Fig. 2, the package structure for LED 101 of embodiment of the present invention two is comparatively similar to the package structure for LED 100 of execution mode one, and its difference is: package structure for LED 101 only encapsulates a light-emitting diode chip for backlight unit 30.Form a groove 21 on the carbon nano-tube film 20, thereby form two conductive regions 23 of space.Electrode 31,32 correspondences of light-emitting diode chip for backlight unit 30 are electrically connected on two conductive regions 23.
Above-mentioned package structure for LED 100 and package structure for LED 101 adopt carbon nano-tube film 20 as conductive layer, is the axial thermal conductivity rate of carbon nano-tube greater than 6600 watts/meter? Kelvin, the therefore bigger heat dispersion that has improved package structure for LED 100 and package structure for LED 101.And, in the process of preparation carbon nano-tube film 20, can directly form the conductive region 23 of space according to design in advance, need not on substrate, to electroplate or printed conductive layer, therefore, the manufacturing of above-mentioned package structure for LED 100 and package structure for LED 101 is more convenient.In addition, encapsulation glue-line 40 is filled in a plurality of grooves 21, to increase the insulating properties between the conductive region 23, simultaneously, light-emitting diode chip for backlight unit 30 and carbon nano-tube film 20 is closely sticked on the substrate 10.
See also Fig. 3, the invention provides a kind of LED encapsulation method, this method for packing is used for encapsulating simultaneously a plurality of light-emitting diode chip for backlight unit 30, and it comprises the steps:
Step S201 provides a substrate 10 and at least two light-emitting diode chip for backlight unit 30, and each light-emitting diode chip for backlight unit 30 comprises two electrodes 31,32.In the present embodiment, substrate 10 is the aluminium base of ceramic substrate or process anodized.
Step S202 is provided with one deck carbon nano-tube film 20 on substrate 10.
Step S203, at least four conductive regions 23 of formation space on carbon nano-tube film 20.Can on carbon nano-tube film 20, form a plurality of grooves 21, to form at least four conductive regions 23 by the method for laser drilling or selectivity heating.
Step S204 is with electrode 31,32 corresponding the electrical connections on four conductive regions 23 of at least two light-emitting diode chip for backlight unit 30 at least.
Step S205 applies an encapsulation glue-line 40 at least on carbon nano-tube film 20 and this four light-emitting diode chip for backlight unit 30.Encapsulation glue-line 40 contains fluorescent material, and the outer surface of encapsulation glue-line 40 is more smooth.
Step S206, cutting substrate 10 is to form a plurality of single package structure for LED 101.
If be used to form package structure for LED 100, then step S206 can omit.Above-mentioned method for packing can form a plurality of single package structure for LED 101 simultaneously in batches, and it is higher that it makes efficient.And method for packing need not electroplated metal layer on substrate 10, and its manufacture method is simpler.
See also Fig. 4, the invention provides another kind of LED encapsulation method, this method for packing is used to encapsulate single light-emitting diode chip for backlight unit 30, and it comprises the steps:
Step S301 provides a substrate 10 and a light-emitting diode chip for backlight unit 30, light-emitting diode chip for backlight unit 30 comprise two electrodes 31,32.In the present embodiment, substrate 10 is the aluminium base of ceramic substrate or process anodized.
Step S302 is provided with one deck carbon nano-tube film 20 on substrate 10.
Step S303, the conductive region 23 of two spaces of formation on carbon nano-tube film 20.Can on carbon nano-tube film 20, form a groove 21, to form this two conductive regions 23 by the method for laser drilling or selectivity heating.
Step S204 is with electrode 31,32 corresponding these two conductive regions 23 that are electrically connected of light-emitting diode chip for backlight unit 30.
Step S205 applies an encapsulation glue-line 40 on carbon nano-tube film 20 and this light-emitting diode chip for backlight unit 30.
Be appreciated that those skilled in the art also can do other variation in spirit of the present invention, certainly, the variation that these are done according to spirit of the present invention all should be included in the present invention's scope required for protection.
Claims (10)
1. package structure for LED, comprise substrate, at least one light-emitting diode chip for backlight unit, each light-emitting diode comprises two electrodes, it is characterized in that: this encapsulating structure also comprises the encapsulation glue-line and is arranged at carbon nano-tube film on this substrate, be formed with at least two conductive regions of space on this carbon nano-tube film, two electrodes of this at least one light-emitting diode chip for backlight unit correspondence respectively are electrically connected on this at least two conductive regions, and this encapsulation glue-line covers this carbon nano-tube film and this light-emitting diode chip for backlight unit.
2. package structure for LED as claimed in claim 1 is characterized in that: offer at least one groove on this carbon nano-tube film, to form this at least two conductive regions.
3. package structure for LED as claimed in claim 1 is characterized in that: this encapsulation glue-line contains fluorescent material.
4. package structure for LED as claimed in claim 1 is characterized in that: this substrate is a ceramic substrate.
5. light emitter diode seal method, it comprises the steps:
A substrate and at least two light-emitting diode chip for backlight unit are provided, and each light-emitting diode chip for backlight unit comprises two electrodes;
One deck carbon nano-tube film is set on this substrate;
On this carbon nano-tube film, form the conductive region of at least four spaces;
Two electrode pairs of these at least two light-emitting diode chip for backlight unit should be electrically connected on this a plurality of conductive regions;
On this carbon nano-tube film and this two light-emitting diode chip for backlight unit, apply an encapsulation glue-line at least.
6. light emitter diode seal method as claimed in claim 5 is characterized in that: the method by laser drilling or selectivity heating forms this at least four conductive regions at this carbon nano-tube film.
7. light emitter diode seal method as claimed in claim 5 is characterized in that: this encapsulation glue-line contains fluorescent material.
8. light emitter diode seal method as claimed in claim 5 is characterized in that: this method for packing comprises that also cutting is coated with the substrate of this encapsulation glue-line, to form the step of a plurality of single light-emitting diodes.
9. light emitter diode seal method, it comprises the steps:
A kind of substrate and a light-emitting diode chip for backlight unit are provided, and this light-emitting diode chip for backlight unit comprises two electrodes;
One deck carbon nano-tube film is set on this substrate;
On this carbon nano-tube film, be formed with the conductive region of two spaces;
Two electrode pairs of this light-emitting diode chip for backlight unit should be electrically connected on this two conductive regions;
On this carbon nano-tube film and light-emitting diode chip for backlight unit, apply one deck encapsulation glue-line.
10. light emitter diode seal method as claimed in claim 9 is characterized in that: the method by laser drilling or selectivity heating forms this two conductive regions at this carbon nano-tube film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009103122300A CN102110759A (en) | 2009-12-25 | 2009-12-25 | Structure and method for packaging light-emitting diode (LED) |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009103122300A CN102110759A (en) | 2009-12-25 | 2009-12-25 | Structure and method for packaging light-emitting diode (LED) |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102110759A true CN102110759A (en) | 2011-06-29 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009103122300A Pending CN102110759A (en) | 2009-12-25 | 2009-12-25 | Structure and method for packaging light-emitting diode (LED) |
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| Country | Link |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103280510A (en) * | 2013-05-27 | 2013-09-04 | 立达信绿色照明股份有限公司 | LED (light-emitting diode) packaging structure and packaging method thereof |
| CN104576910A (en) * | 2015-01-05 | 2015-04-29 | 福建天电光电有限公司 | Radiating-improved semiconductor light-emitting device, manufacturing method of radiating-improved semiconductor light-emitting device and three-dimensional LED light source |
| CN104752571A (en) * | 2013-12-31 | 2015-07-01 | 晶能光电（江西）有限公司 | Cutting method of wafer grade white-light LED chip |
| CN106876552A (en) * | 2017-02-27 | 2017-06-20 | 深圳市华星光电技术有限公司 | Micro- LED array substrate and display panel |
| CN107331752A (en) * | 2017-07-06 | 2017-11-07 | 庞绮琪 | Improve the LED encapsulation structure of voltage endurance capability |
| WO2024169703A1 (en) * | 2023-02-15 | 2024-08-22 | 惠州市聚飞光电有限公司 | Light-emitting apparatus and manufacturing method therefor |
-
2009
- 2009-12-25 CN CN2009103122300A patent/CN102110759A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103280510A (en) * | 2013-05-27 | 2013-09-04 | 立达信绿色照明股份有限公司 | LED (light-emitting diode) packaging structure and packaging method thereof |
| CN104752571A (en) * | 2013-12-31 | 2015-07-01 | 晶能光电（江西）有限公司 | Cutting method of wafer grade white-light LED chip |
| CN104576910A (en) * | 2015-01-05 | 2015-04-29 | 福建天电光电有限公司 | Radiating-improved semiconductor light-emitting device, manufacturing method of radiating-improved semiconductor light-emitting device and three-dimensional LED light source |
| CN104576910B (en) * | 2015-01-05 | 2017-08-01 | 福建天电光电有限公司 | The manufacture method of luminous semiconductor device |
| CN106876552A (en) * | 2017-02-27 | 2017-06-20 | 深圳市华星光电技术有限公司 | Micro- LED array substrate and display panel |
| CN106876552B (en) * | 2017-02-27 | 2019-07-26 | 深圳市华星光电技术有限公司 | Micro- LED array substrate and display panel |
| CN107331752A (en) * | 2017-07-06 | 2017-11-07 | 庞绮琪 | Improve the LED encapsulation structure of voltage endurance capability |
| WO2024169703A1 (en) * | 2023-02-15 | 2024-08-22 | 惠州市聚飞光电有限公司 | Light-emitting apparatus and manufacturing method therefor |
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Application publication date: 20110629 |