CN107331752A - Improve the LED encapsulation structure of voltage endurance capability - Google Patents
Improve the LED encapsulation structure of voltage endurance capability Download PDFInfo
- Publication number
- CN107331752A CN107331752A CN201710544797.5A CN201710544797A CN107331752A CN 107331752 A CN107331752 A CN 107331752A CN 201710544797 A CN201710544797 A CN 201710544797A CN 107331752 A CN107331752 A CN 107331752A
- Authority
- CN
- China
- Prior art keywords
- conductive layer
- encapsulation structure
- led
- led encapsulation
- endurance capability
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005538 encapsulation Methods 0.000 title claims abstract description 28
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 239000000919 ceramic Substances 0.000 claims abstract description 10
- 238000000034 method Methods 0.000 claims description 14
- 239000003989 dielectric material Substances 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 7
- 238000004806 packaging method and process Methods 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- 238000000608 laser ablation Methods 0.000 claims description 3
- 238000003801 milling Methods 0.000 claims description 3
- 239000007921 spray Substances 0.000 claims description 3
- 238000009826 distribution Methods 0.000 claims description 2
- 238000000926 separation method Methods 0.000 claims 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 5
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- DBMJMQXJHONAFJ-UHFFFAOYSA-M Sodium laurylsulphate Chemical compound [Na+].CCCCCCCCCCCCOS([O-])(=O)=O DBMJMQXJHONAFJ-UHFFFAOYSA-M 0.000 description 2
- 239000000084 colloidal system Substances 0.000 description 2
- 238000012856 packing Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 235000019333 sodium laurylsulphate Nutrition 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
Improve the LED encapsulation structure of voltage endurance capability, it is characterized in that the LED encapsulation structure include being arranged in ceramic substrate conductive layer, the conductive layer is separated into the multiple compartments and at least one LED die on conductive layer exposed surface of multiple light-emitting zones, each LED die is with the first electrode being electrically connected with light-emitting zone.
Description
Technical field
The present invention relates to LED encapsulation structure.
Background technology
LED encapsulation technology is exactly that LED chip is packaged, and the light source that can be used directly is made.LED common at present
Encapsulating structure will using encapsulated layer in a plane of substrate to be fixed on LED chip on the substrate of one plane, then
The LED chip is encapsulated on the substrate.Although use demand can be substantially met using such a encapsulating structure, due to LED core
The reason for piece self character, the voltage endurance capability using the LED chip of existing LED encapsulation structure is all poor, therefore provides a kind of
Improving the LED encapsulation structure of voltage endurance capability turns into urgent problem to be solved in the prior art.
The content of the invention
To solve aforementioned technical problem, present invention employs following technical scheme：There is provided the LED envelopes for improving voltage endurance capability
Assembling structure, it is characterized in that the LED encapsulation structure includes being arranged in conductive layer in ceramic substrate, by the conduction
Layer is separated into multiple compartments of multiple light-emitting zones and at least one LED die on conductive layer exposed surface,
Each LED die has the first electrode being electrically connected with light-emitting zone.
Improve the LED encapsulation structure of voltage endurance capability, it is characterised in that each compartment can be from the exposure of the conductive layer
Surface extends to the ceramic substrate.The height that the width of the compartment is more than.And filled in compartment as packaging plastic
Dielectric material.There is provided the LED encapsulation structure for improving voltage endurance capability, it is characterized in that each LED die is respectively provided with the luminous zone
The second electrode being electrically connected in domain.
Present invention also offers a kind of method for the LED encapsulation structure for manufacturing and improving voltage endurance capability.Methods described include with
Lower step：
1) multiple compartments are formed in conductive layer on a ceramic substrate is arranged using material removal method, it is each described
Compartment extends through the conductive layer conductive layer is separated into multiple light-emitting zones.
2) at least one LED die is installed on the exposed surface of the conductive layer, the first, second of the LED die
Into electrical connection in electrode and light-emitting zone.
3) formed in the conductive layer after compartment, use the described one kind of the dielectric material filling as packaging plastic
The method that manufacture improves the LED encapsulation structure of voltage endurance capability, it is characterized in that the material removal process can be laser ablation, spray
Water is processed and any one in micro- milling.
The LED encapsulation structure for the raising voltage endurance capability that the present invention is provided, compared with prior art, by improving LED encapsulation
Structure, the structure and layout of optimization conductive layer, compartment and tube core, improves LED voltage endurance capability, solves in the prior art
The problem of existing.
Embodiment
The LED encapsulation structure for the raising voltage endurance capability that the present invention is provided, the LED encapsulation structure includes distribution and arranged
In the conductive layer in ceramic substrate, the conductive layer is separated into multiple compartments of multiple light-emitting zones and installed in leading
At least one LED die on electric layer exposed surface, each LED die has the first electrode being electrically connected with light-emitting zone
And second electrode.Each compartment can extend to the ceramic substrate from the exposed surface of the conductive layer.The compartment
The height that is more than of width.And dielectric material as packaging plastic is filled in compartment.
Each LED die is respectively provided with the second electrode being electrically connected in the light-emitting zone.
Present invention also offers a kind of method for the LED encapsulation structure for manufacturing and improving voltage endurance capability.Methods described include with
Lower step：
1) multiple compartments are formed in conductive layer on a ceramic substrate is arranged using material removal method, it is each described
Compartment extends through the conductive layer conductive layer is separated into multiple light-emitting zones.
2) at least one LED die is installed on the exposed surface of the conductive layer, the first, second of the LED die
Into electrical connection in electrode and light-emitting zone.
3) formed after compartment, filled using the dielectric material as packaging plastic in the conductive layer
The material removal process can be any one in laser ablation, water spray processing and micro- milling.
The use dielectric material of the packing colloid makes, the relative dielectric constant scope 50~200 of the dielectric material.
The LED encapsulation structure for improving voltage endurance capability, it is characterized in that the relative dielectric constant scope of dielectric material is preferred
80~150.
The LED encapsulation structure for improving voltage endurance capability, it is characterized in that being adulterated in described packing colloid by nanometer silver granuel
Son.
The preparation method of the nano silver particles is：
1) in the presence of surfactant such as sodium lauryl sulfate and dodecyl sodium sulfate；
2) 532nm is used, 10ns laser irradiates silver metal matrix material in acetone, water, methanol, isopropanol equal solvent
At solution interface, laser lift-off silver foil is used, nano silver particles are obtained.
Voltage-withstand test is tested
Respectively take 100 simulation high-tension life test is respectively adopted LED made from embodiment 1~4, voltage is set
For the 150% of rated voltage, using rated voltage under life-span as 100, it is rated voltage voltage increase during surge current occur
120%
| Example No. | 1 | 2 | 3 | 4 |
| Life-span | 85 | 85 | 84 | 82 |
Test result indicates that, can be in height using the LED of the LED encapsulation structure encapsulation of the raising voltage endurance capability of the present invention
Voltage keeps higher service life.
Claims (5)
1. the LED encapsulation structure of voltage endurance capability is improved, it is characterized in that the LED encapsulation structure is arranged in ceramics including distribution
Conductive layer on substrate, multiple compartments that the conductive layer is separated into multiple light-emitting zones and sudden and violent installed in conductive layer
Reveal at least one LED die on surface, each LED die has the first electrode being electrically connected with light-emitting zone.
2. the LED encapsulation structure of voltage endurance capability is improved as claimed in claim 1, it is characterised in that each compartment can be from institute
The exposed surface for stating conductive layer extends to the ceramic substrate.The height that the width of the compartment is more than.And filled out in compartment
Use the dielectric material for packaging plastic as.
3. such as claim 1 provides the LED encapsulation structure for improving voltage endurance capability, it is characterized in that each LED die is respectively provided with institute
State the second electrode being electrically connected in light-emitting zone.
4. a kind of method for manufacturing the LED encapsulation structure that voltage endurance capability is improved as described in claims 1 to 3 is any.Methods described
Comprise the following steps：
1) multiple compartments are formed in conductive layer on a ceramic substrate is arranged using material removal method, each separation
Chamber extends through the conductive layer conductive layer is separated into multiple light-emitting zones；
2) at least one LED die is installed on the exposed surface of the conductive layer, in first, second electrode of the LED die
With in light-emitting zone into electrical connection；
3) formed after compartment, filled using the dielectric material as packaging plastic in the conductive layer.
5. a kind of method for manufacturing the LED encapsulation structure for improving voltage endurance capability as claimed in claim 4, it is characterized in that the material
Material removal process can be any one in laser ablation, water spray processing and micro- milling.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710544797.5A CN107331752A (en) | 2017-07-06 | 2017-07-06 | Improve the LED encapsulation structure of voltage endurance capability |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710544797.5A CN107331752A (en) | 2017-07-06 | 2017-07-06 | Improve the LED encapsulation structure of voltage endurance capability |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107331752A true CN107331752A (en) | 2017-11-07 |
Family
ID=60195800
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710544797.5A Pending CN107331752A (en) | 2017-07-06 | 2017-07-06 | Improve the LED encapsulation structure of voltage endurance capability |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107331752A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101436557A (en) * | 2007-11-13 | 2009-05-20 | 香港科技大学 | Wafer level encapsulation method of LED array encapsulation and LED encapsulation device made thereby |
| CN102110759A (en) * | 2009-12-25 | 2011-06-29 | 鸿富锦精密工业（深圳）有限公司 | Structure and method for packaging light-emitting diode (LED) |
| WO2015109574A1 (en) * | 2014-01-26 | 2015-07-30 | 上海瑞丰光电子有限公司 | Led wafer-level encapsulation method |
-
2017
- 2017-07-06 CN CN201710544797.5A patent/CN107331752A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101436557A (en) * | 2007-11-13 | 2009-05-20 | 香港科技大学 | Wafer level encapsulation method of LED array encapsulation and LED encapsulation device made thereby |
| CN102110759A (en) * | 2009-12-25 | 2011-06-29 | 鸿富锦精密工业（深圳）有限公司 | Structure and method for packaging light-emitting diode (LED) |
| WO2015109574A1 (en) * | 2014-01-26 | 2015-07-30 | 上海瑞丰光电子有限公司 | Led wafer-level encapsulation method |
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|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20171107 |