CN101855723B - 功率半导体模块 - Google Patents
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Abstract
为提供一种结构紧凑、成本低廉、且同时提供了防爆保护的功率半导体模块(1),该功率半导体模块(1)带有至少两个相互连接的具有可控功率半导体的功率半导体单元(11),其中,为每个功率半导体单元(11)配设有冷却板(3、4),功率半导体与该冷却板(3、4)导热地连接,本发明建议提供一种功率半导体单元(11)布置在其内的模块壳体(2),其中,所述冷却板(3、4)构成该模块壳体的至少一部分。
Description
技术领域
本发明涉及一种功率半导体模块,该功率半导体模块带有至少两个相互连接的具有可控功率半导体的功率半导体单元,其中,为每个功率半导体单元配设有冷却板,可控功率半导体与该冷却板导热地连接。
本发明还涉及一种由串联的这种功率半导体模块形成的整流器支路,以及由这种整流器支路形成的整流器。
背景技术
这样的功率半导体单元从DE3032133中已知。在DE 3032133中描述的功率半导体单元具有夹在两个电极之间的压力接触的功率半导体。电极之一与冷却管线相连接,且因此同时用作冷却板。
市场上常见的功率半导体单元通常已装配有壳体和冷却板。这种单元的电气布线也是已知的。在EP0845809A2中描述了一种功率半导体单元,该功率半导体单元具有带冷却板的壳体。壳体以泡沫材料填充,以在爆炸情况中吸收爆炸力。在冷却板上布置了功率半导体芯片,其中,设置有用于将功率半导体芯片相互连接的连接引线。已知的功率半导体单元的缺点在于,仅能以复杂的方式与另外的功率半导体单元组装为功率半导体模块,因而导致一种占据空间的构造。特别地,在应用于高压和强电技术的领域中时,这能够导致连接引线的熔断,且导致发生电弧,由此将产生爆炸气体。由于此不希望的危险源,在实践中,已知的功率半导体模块不可使用在能量传输和分配领域内。
发明内容
本发明所要解决的技术问题是提供一种结构紧凑且成本低廉的前述功率半导体模块,其中同时提供了防爆炸保护。
本发明通过提供一种功率半导体单元布置在其中的模块壳体解决此技术问题,其中,功率半导体单元的冷却板形成该模块壳体的至少一部分。
根据本发明,提供了带有至少两个功率半导体单元的功率半导体模块。每个功率半导体单元的功率半导体与冷却板导热地连接,如在现有技术中已知。根据本发明,两个功率半导体单元布置在一共同的模块壳体内。在此,每个功率半导体单元的冷却板构成了功率半导体模块的模块壳体的界壁。根据本发明的功率半导体模块因此由多个功率半导体单元组装成,其中,功率半导体单元例如具有专属的单元壳体,在所述单元壳体内合适地布置了相互连接的功率半导体芯片。根据本发明的功率半导体模块例如与能量存储器并联。功率半导体模块和能量存储器则共同构成了支路模块,其中,此支路模块相互串联而形成整流器支路。此整流器支路又用作所谓的多级整流器的相位部件,所述相位部件例如可使用在能量传输和分配领域中。但是此外,也可考虑用在驱动技术领域中。
根据本发明,通过使功率半导体单元的冷却板同时也用作功率半导体模块的壳体壁,提供了一种紧凑的部件。此外,将通常机械稳定的冷却板也用作防爆炸保护。
可控功率半导体例如是可关断的功率半导体,例如IGBT,GTO,IGCT等,但也例如是不可关断的功率半导体,例如晶闸管。在本发明的范围内,功率半导体单元也可以具有例如二极管,空载二极管等的非可控功率半导体。
模块壳体合适地具有在冷却板之间延伸且由不导电的绝缘材料(例如陶瓷、塑料等)制造的模块侧壁。与此不同的是,在本发明的范围内,模块侧壁也由导电的材料制成。
合适地提供了用于连接功率半导体单元的连接夹,其中连接夹延伸通过至少一个模块侧壁。以此方式,提供了一种用于功率半导体模块的结构简单的连接。
功率半导体单元有利地相互面对。这也提供了针对爆炸气体或热气体传播的优点,使得爆炸力由机械上坚固的冷却板承受。此外,以连接夹实现了简单的布线(Verschienung)。
为在爆炸情况下提供进一步的阻尼,模块壳体合适地以填充材料(例如耐热的泡沫材料、塑料等)填充。
功率半导体有利地通过连接引线相互连接。此功率半导体单元可在市场上廉价地且多规格地获取。
功率半导体模块有利地具有至少一个与冷却板固定连接的保持环,所述保持环形成从冷却板突出的侧壁段,所述侧壁段至少部分地包围功率半导体单元。通过由机械稳定的材料且例如由金属或钢制成的保持环提供了另外的防爆炸保护。
如上文中已阐述,合适的是使此功率半导体模块与能量存储器(例如电容器)并联连接而形成整流器支路模块。整流器支路模块的串联合适地形成了整流器支路,所述整流器支路例如通过交流端子与交流电网的一相连接,且通过直流端子连接在直流中间电路上。串联则在交流端子和直流端子之间延伸。
附图说明
本发明的其它合适构造和优点是如下参考附图的本发明实施例的描述的对象,其中相同的附图标号表示作用相同的部件,且其中:
图1示出了根据本发明的功率半导体模块的实施例的透视图;而
图2示出了图1所示功率半导体模块的侧面剖视图。
具体实施方式
图1在透视图中示出了根据本发明的功率半导体模块1的实施例。所示出的功率半导体模块1具有模块壳体2,所述模块壳体2由上模块壳体壁3,下模块壳体壁4以及模块侧壁5构成。为将模块壳体壁3、4和模块侧壁5机械地连接而设置有轮廓板6,所述轮廓板6与各壁固定地螺纹连接。为将功率半导体模块1导电连接而设置有前连接夹7和8以及后连接夹9和10。连接夹8和10位于地电势上,而连接夹7和9位于相对较高的电势上,例如1千伏。
图2在横截面侧视图中示出了图1所示功率半导体模块1,图中可更好地观察到上模块壳体壁3、下模块壳体壁4和模块侧壁5。尤其示出了上模块壳体壁3和下模块壳体壁4分别与功率半导体单元11连接。功率半导体单元11的每个在其内部具有示意地示出的功率半导体,所述功率半导体通过连接引线以及其它导轨相互连接。连接件12用于将功率半导体单元11连接在连接夹7、8、9、10上。连接件12与图2中示意性示出的功率半导体或功率半导体芯片的导电连接在图2中为清晰起见未示出。未示出的连接在本发明的范围内是任意的。
功率半导体单元11在结构上相同且相互面对地布置,使得其功率半导体或功率半导体芯片与上模块壳体壁3以及下模块壳体壁4导热地连接。所述上模块壳体壁3和下模块壳体壁4同时用作功率半导体单元11的功率半导体的冷却板3、4。换言之,为功率半导体单元11的运行总要提供的冷却板3、4同时形成了功率半导体模块1的上、下模块壳体壁。以此方式廉价地提供了模块壳体2。在此,紧凑且廉价的模块壳体2同时构成了防爆炸保护。
功率半导体单元11是市场上常见的功率半导体单元,它自身通常具有单元壳体,在所述单元壳体内又布置有作为功率半导体的功率半导体芯片。在本发明的所示实施例中,功率半导体单元11的功率半导体芯片至少部分地通过连接引线相互连接。由于功率半导体单元11的功率半导体芯片的这种连接,特别在高短路电流时,可发生连接引线的熔断而导致电弧的形成。电弧释放出爆炸气体,由于功率半导体单元11的相互面对的布置,所述爆炸气体基本上被引向作为上和下壳体壁的稳定地对置的冷却板3、4。
每个半导体单元11由保持环13围绕,所述保持环13以其凸缘段固定地螺纹连接在各冷却板3、4上。从各冷却板3、4突出的保持环13的侧壁段包围了各功率半导体单元11且因此构成了附加的防爆炸保护。保持环13例如由钢制造。
为进一步提高功率半导体模块的抗爆性,在功率半导体单元11的连接件12之间设置有填充空间14,在所述填充空间14内布置耐热填充材料。填充材料例如是不导电的耐热塑料。在爆炸情况下,塑料变形且同时吸收了所释放的爆炸能量。
在所示的实施例中,模块侧壁5由不导电的绝缘材料(例如以玻璃纤维强化的塑料)制成,其中也可考虑将金属材料,即导电材料用于模块侧壁5。模块侧壁5由连接夹7或连接夹9和10穿过,使得从外部实现了功率半导体模块1的简单的连接。在导电的模块侧壁5的情况中,处于与被穿过的模块侧壁5的电势不同的电势下的连接夹7通过合适的绝缘单元相对于所述模块侧壁5绝缘。在合适的扩展中,市场上常见的绝缘套管固定在模块侧壁5上,所述绝缘套管实现了连接夹7穿过各模块侧壁的绝缘穿过。
功率半导体模块1有利地与电容器或其它能量存储器并联,其中功率半导体模块1和能量存储器的并联连接形成了支路模块。支路模块的串联又构成了作为多极整流器的一部分的整流器支路。此多极整流器例如使用在高压直流输电中。
Claims (8)
1.一种功率半导体模块(1),该功率半导体模块带有至少两个相互连接的具有可控功率半导体芯片的功率半导体单元(11),其中,为每个功率半导体单元(11)配设有冷却板(3、4),所述可控功率半导体芯片与该冷却板(3、4)导热地连接,
其中,一种模块壳体(2),所述功率半导体单元布置在所述模块壳体(2)内,其中所述功率半导体单元(11)的冷却板(3、4)构成所述模块壳体(2)的至少一部分,
其特征在于,所述功率半导体芯片通过连接引线相互连接。
2.根据权利要求1所述的功率半导体模块(1),其特征在于,所述功率半导体单元(11)相互面对。
3.根据权利要求1或2所述的功率半导体模块(1),其特征在于,所述模块壳体(2)具有在所述冷却板(3、4)之间延伸且由绝缘材料组成的侧壁(5)。
4.根据权利要求3所述的功率半导体模块(1),其特征在于用于连接所述功率半导体单元(11)的连接夹(7、8、9、10),其中,所述连接夹(7、8、9、10)延伸穿过所述侧壁。
5.根据权利要求1所述的功率半导体模块(1),其特征在于,所述冷却板(3、4)构成所述模块壳体的上侧和下侧。
6.根据权利要求1所述的功率半导体模块(1),其特征在于至少一个与冷却板(3、4)固定连接的保持环,所述保持环具有从冷却板突出的侧壁段,所述侧壁段至少部分地包围功率半导体单元(11)。
7.一种整流器支路,其特征在于,根据上述权利要求中任一项所述的功率半导体模块(1)的串联。
8.一种整流器,其特征在于,根据权利要求7所述的整流器支路的桥接。
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JP2011503852A (ja) | 2011-01-27 |
US20100265744A1 (en) | 2010-10-21 |
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ES2705170T3 (es) | 2019-03-22 |
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