CN101820009A - Crystal silicon solar cell with selective emitter and preparation method thereof - Google Patents
Crystal silicon solar cell with selective emitter and preparation method thereof Download PDFInfo
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- CN101820009A CN101820009A CN200910264504A CN200910264504A CN101820009A CN 101820009 A CN101820009 A CN 101820009A CN 200910264504 A CN200910264504 A CN 200910264504A CN 200910264504 A CN200910264504 A CN 200910264504A CN 101820009 A CN101820009 A CN 101820009A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention discloses a crystal silicon solar cell with a selective emitter and a preparation method thereof, which relate to the technical field of the production of crystal silicon solar cells, in particular to the crystal silicon solar cell with the selective emitter and the preparation method thereof. The method comprises the following steps of: forming heavy doping in an area, which contacts a silicon wafer, of a positive surface electrode, performing reverse etching by using the positive surface electrode as a mask; forming light doping in other areas of the front surface of the silicon plate; and thus, obtaining a selective emitter structure. The crystal silicon solar cell with the selective emitter has high photoelectric conversion efficiency due to the selective emitter structure, has the characteristics of simple process and low cost and has a high practical value.
Description
Technical field:
What the present invention relates to is the technical field that a kind of crystal-silicon solar cell is produced, and what be specifically related to is a kind of crystal silicon solar cell with selective emitter and preparation method thereof.
Background technology:
The general nitrogen that adopts carries liquid POCl in the conventional crystal-silicon solar cell suitability for industrialized production
3Enter diffusion furnace, silicon chip is carried out the high temperature phosphorous diffusion.Consequently form uniform PN junction at the silicon chip surface layer, promptly the whole silicon wafer surface is even doping.The emitter solar battery structure of this even doping also is unfavorable for the raising of its photoelectric conversion efficiency.Better structure is that (selective emitter, SE) solar battery structure promptly adopt heavy doping in the zone that silicon chip contacts with metal electrode, and adopt lighter doping relatively in other zone selective emitter.The heavy doping of electrode contact zone helps forming ohmic contact, reduce the contact resistance loss of solar cell, other regional light dope then helps reducing the compound of photo-generated carrier, improve the shortwave current response of solar cell, thereby improve the output current (and short circuit current) of solar cell, realize the raising of photoelectric conversion efficiency.At present, the average light photoelectric transformation efficiency of the conventional single crystal silicon solar cell of suitability for industrialized production is between 16.5%-17.0%.If but adopted selective emitting electrode structure, then could improve the average conversion efficiency of single crystal silicon solar cell more than 0.5%.
Just because of selective emitter solar battery has higher photoelectric conversion efficiency, its production that moves towards the industrialization gradually becomes novel crystal silicon solar cell of future generation.The preparation of selective emitter solar battery can adopt a lot of methods to carry out, such as, the diffusion of mask secondary, laser processing, selectivity heating etc.Although these methods under lab can obtain higher photoelectric conversion efficiency of the solar battery, these technologies are all relatively complicated, and cost of manufacture is higher, do not accepted by most of solar cell company.People more wish to adopt simple, the lower-cost method of a kind of technology to prepare selective emitter solar battery.
Summary of the invention:
The purpose of this invention is to provide a kind of crystal silicon solar cell with selective emitter and preparation method thereof, it had both had the higher photoelectric conversion efficiency that selective emitting electrode structure brings, have simple, the lower-cost characteristics of technology again, have good practical values.
In order to solve the existing problem of background technology, the present invention is by the following technical solutions: it forms heavy doping at front surface electrode and silicon chip contact area, and be that mask carries out reverse etching with the front surface electrode, form light dope in other zone of silicon chip front surface, thereby obtain selective emitting electrode structure; The preparation method of this crystal silicon solar cell with selective emitter may further comprise the steps: one, silicon chip surface texturing, two, High temperature diffusion is carried out heavy doping, three, remove periphery or back side PN junction, four, remove phosphorosilicate glass, five, silk screen printing backplate and back side aluminum slurry and oven dry, six, the positive silver electrode of silk screen printing, seven, the electrode co-sintering, eight, be that mask carries out reverse etching and obtains light dope in other zone of silicon chip front surface with the front surface electrode, nine, the coated with antireflection film.
Described silicon chip surface texturing is meant that the method for dry etchings such as wet etchings such as adopting acid, alkali or plasma etching, reactive ion etching erodes away small pyramid or bowl configurations at silicon chip surface, to increase the roughness of silicon chip surface, reduce the light emission of silicon chip surface.
Described High temperature diffusion is carried out heavy doping and is meant and carries out high temperature phosphorous diffusion (to P type silicon chip) or boron diffusion (to N type silicon chip) forming PN junction in diffusion furnace, and obtains the diffusion layer square resistance less than 20 ohm.
Described removal periphery or back side PN junction are meant that wet etching system such as the aqueous solution that adopts aqueous acid, alkali or plasma etching system, reactive ion etching system or laser cutting etc. will get rid of at the PN junction at the silicon chips periphery or the back side in will spreading.
Described is that mask carries out reverse etching and is meant that at other zone acquisition light dope of silicon chip front surface with the front surface electrode be the mask that stops reaction with the front surface electrode, employing can corrosion of silicon but not corroding metal, acid solution or aqueous slkali or plasma based or reactive ion system, silicon chip surface is optionally eroded very thin one deck, but do not corrode metal electrode, thereby form light dope in other zone of silicon chip surface.
Preferably, the reactive ion system of plasma based, sulphur hexafluoride and oxygen mixed gas that described reverse corrosion system is carbon tetrafluoride and oxygen mixed gas, or ammonia spirit, tetramethyl ammonium hydroxide solution, but be not limited to these corrosion systems.
Described coated with antireflection film is meant that using plasma strengthens the method for chemical vapour deposition (CVD) (PECVD) at silicon chip surface deposited silicon nitride antireflective coating, but be not limited to silicon nitride film, the film (as silicon dioxide, magnesium fluoride etc.) of all right other material, or the compound plural layers of multiple material.
The present invention compares conventional suitability for industrialized production crystal-silicon solar cell, only increased reverse etching process of a step, and utilized the front metal electrode of solar cell oppositely to corrode dexterously, therefore as mask, have simple, the lower-cost characteristics of technology, have good practical values.
Embodiment:
This embodiment is by the following technical solutions: it forms heavy doping at front surface electrode and silicon chip contact area, and be that mask carries out reverse etching with the front surface electrode, form light dope in other zone of silicon chip front surface, thereby obtain selective emitting electrode structure; The preparation method of this crystal silicon solar cell with selective emitter may further comprise the steps: one, silicon chip surface texturing, two, High temperature diffusion is carried out heavy doping, three, remove periphery or back side PN junction, four, remove phosphorosilicate glass, five, silk screen printing backplate and back side aluminum slurry and oven dry, six, the positive silver electrode of silk screen printing, seven, the electrode co-sintering, eight, be that mask carries out reverse etching and obtains light dope in other zone of silicon chip front surface with the front surface electrode, nine, the coated with antireflection film.
The detailed step that this embodiment adopts is as follows:
One, be that 125mm * 125mm, thickness are about 200 microns p type single crystal silicon sheet and put into the solution that NaOH, sodium metasilicate, isopropyl alcohol and deionized water form and corrode with area, obtain surface unanimity, pyramid matte silicon chip of uniform size, realize the silicon chip surface texturing, light reflectivity to obtain to reduce cleans up silicon chip then.
Two, silicon chip is put into diffusion furnace, and utilize nitrogen to carry liquid POCl
3Enter in the diffusion furnace silicon chip is carried out High temperature diffusion, diffusion temperature is 950 ℃, and the time is 1 hour, and the square resistance that the diffusion back obtains is about about 15 ohm.
Three, the silicon chip after will spreading is put into the etching machine, utilizes the method for the plasma etching of carbon tetrafluoride and oxygen mixed gas to get rid of the PN junction of silicon chips periphery.
Four, utilize hydrofluoric acid solution that the phosphorosilicate glass that silicon chip surface forms is got rid of.
Five, the method for utilizing silk screen printing silver-colored aluminum slurry and oven dry on silicon chip back of the body surface printing, to use as back electrode, aluminum slurry and oven dry in other the regional silk screen printing of the silicon chip back side then is with as the back side aluminium back of the body.
Six, utilize the method for silk screen printing at silicon chip front surface printing front silver electrode paste.
Seven, silicon chip is put into high temperature sintering furnace and carried out high temperature sintering, make metal electrode sizing solidify, and form alloy and ohmic contact with silicon chip.
Eight, silicon chip is put into the etching machine, utilize the plasma of carbon tetrafluoride and oxygen mixed gas to carry out etching, because it is very slow that this plasma and metal react, so silicon chip surface optionally can be eroded very thin one deck and do not damage the metal electrode of solar cell.Make the square resistance of electrodeless covering place silicon chip surface be about about 80 ohm by adjusting etching technics.
Nine, utilize the method for plasma enhanced chemical vapor deposition (PECVD) at silicon chip surface deposition last layer silicon nitride antireflective and passivating film.The final selective emitter solar battery that obtains.
This embodiment has following beneficial effect:
One, it compares conventional suitability for industrialized production crystal-silicon solar cell, only increased reverse etching process of a step, and utilized the front metal electrode of solar cell oppositely to corrode dexterously, therefore as mask, have simple, the lower-cost characteristics of technology, have good practical values.
Two, compare with comparing conventional suitability for industrialized production crystal-silicon solar cell, form heavy doping, can reduce the contact resistance of metal electrode and silicon chip, improve the fill factor, curve factor and the photoelectric conversion efficiency of solar cell at front surface electrode and silicon chip contact area.
Claims (3)
1. crystal silicon solar cell with selective emitter and preparation method thereof, it is characterized in that it forms heavy doping at front surface electrode and silicon chip contact area, and be that mask carries out reverse etching with the front surface electrode, form light dope in other zone of silicon chip front surface, thereby obtain selective emitting electrode structure.
2. a kind of crystal silicon solar cell with selective emitter according to claim 1 and preparation method thereof, the preparation process that it is characterized in that it: one, silicon chip surface texturing, two, High temperature diffusion is carried out heavy doping, three, remove periphery or back side PN junction, four, remove phosphorosilicate glass, five, silk screen printing backplate and back side aluminum slurry and oven dry, six, the positive silver electrode of silk screen printing, seven, electrode co-sintering, eight, be that mask carries out reverse etching and obtains light dope in other zone of silicon chip front surface with the front surface electrode, nine, the coated with antireflection film.
3. a kind of crystal silicon solar cell with selective emitter according to claim 1 and preparation method thereof, it is characterized in that described is that mask carries out reverse etching and is meant that at other zone acquisition light dope of silicon chip front surface with the front surface electrode be the mask that stops reaction with the front surface electrode, employing can corrosion of silicon but is not corroded the corrosion of metal system, silicon chip surface is optionally eroded very thin one deck, but do not corrode metal electrode, thereby form light dope in other zone of silicon chip surface.
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| CN200910264504A CN101820009A (en) | 2009-12-25 | 2009-12-25 | Crystal silicon solar cell with selective emitter and preparation method thereof |
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| CN200910264504A CN101820009A (en) | 2009-12-25 | 2009-12-25 | Crystal silicon solar cell with selective emitter and preparation method thereof |
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Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102185005A (en) * | 2010-10-18 | 2011-09-14 | 江阴浚鑫科技有限公司 | Method for manufacturing selective emitter battery |
| CN102629643A (en) * | 2012-04-16 | 2012-08-08 | 中利腾晖光伏科技有限公司 | Manufacturing method of high-square-resistance solar cell |
| CN102709342A (en) * | 2012-07-05 | 2012-10-03 | 合肥海润光伏科技有限公司 | Selective emitter structure of solar cell and preparation method thereof |
| CN102766908A (en) * | 2012-07-25 | 2012-11-07 | 苏州阿特斯阳光电力科技有限公司 | Boron diffusion method of crystalline silicon solar cell |
| CN102779898A (en) * | 2012-06-27 | 2012-11-14 | 友达光电股份有限公司 | Method for manufacturing solar cells |
| CN102856436A (en) * | 2012-09-05 | 2013-01-02 | 友达光电股份有限公司 | Solar cell and manufacturing method thereof |
| CN104112794A (en) * | 2014-07-28 | 2014-10-22 | 六安市大宇高分子材料有限公司 | Manufacturing method for selective emitter solar battery |
| CN105830226A (en) * | 2013-12-20 | 2016-08-03 | 太阳能公司 | Solar cell and production method therefor |
| CN110571299A (en) * | 2019-08-29 | 2019-12-13 | 东方日升（常州）新能源有限公司 | Self-aligned buried gate passivation contact crystalline silicon solar cell and preparation method thereof |
| CN113972300A (en) * | 2021-10-20 | 2022-01-25 | 晶澳（扬州）太阳能科技有限公司 | Solar cell and preparation method thereof |
| CN114373808A (en) * | 2021-11-26 | 2022-04-19 | 江苏科来材料科技有限公司 | High-efficient crystal silicon battery |
| CN114464707A (en) * | 2022-02-23 | 2022-05-10 | 中南大学 | Method for preparing N-type cell selective emitter by hydrogen plasma treatment |
| CN115020544A (en) * | 2022-06-08 | 2022-09-06 | 中节能太阳能科技（镇江）有限公司 | Method for manufacturing boron-doped selective emitter N-type TOPCon battery |
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2009
- 2009-12-25 CN CN200910264504A patent/CN101820009A/en active Pending
Cited By (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102185005A (en) * | 2010-10-18 | 2011-09-14 | 江阴浚鑫科技有限公司 | Method for manufacturing selective emitter battery |
| CN102629643A (en) * | 2012-04-16 | 2012-08-08 | 中利腾晖光伏科技有限公司 | Manufacturing method of high-square-resistance solar cell |
| CN102629643B (en) * | 2012-04-16 | 2015-07-01 | 中利腾晖光伏科技有限公司 | Manufacturing method of high-square-resistance solar cell |
| CN102779898A (en) * | 2012-06-27 | 2012-11-14 | 友达光电股份有限公司 | Method for manufacturing solar cells |
| CN102709342A (en) * | 2012-07-05 | 2012-10-03 | 合肥海润光伏科技有限公司 | Selective emitter structure of solar cell and preparation method thereof |
| CN102766908B (en) * | 2012-07-25 | 2016-02-24 | 苏州阿特斯阳光电力科技有限公司 | The Boron diffusion method of crystal silicon solar energy battery |
| CN102766908A (en) * | 2012-07-25 | 2012-11-07 | 苏州阿特斯阳光电力科技有限公司 | Boron diffusion method of crystalline silicon solar cell |
| CN102856436A (en) * | 2012-09-05 | 2013-01-02 | 友达光电股份有限公司 | Solar cell and manufacturing method thereof |
| WO2014036763A1 (en) * | 2012-09-05 | 2014-03-13 | 友达光电股份有限公司 | Solar cell and manufacturing method thereof |
| CN105830226A (en) * | 2013-12-20 | 2016-08-03 | 太阳能公司 | Solar cell and production method therefor |
| CN105830226B (en) * | 2013-12-20 | 2018-02-09 | 太阳能公司 | The metallization of solar cell |
| US11127866B2 (en) | 2013-12-20 | 2021-09-21 | Sunpower Corporation | Metallization of solar cells |
| US12074233B2 (en) | 2013-12-20 | 2024-08-27 | Maxeon Solar Pte. Ltd. | Metallization of solar cells |
| CN104112794A (en) * | 2014-07-28 | 2014-10-22 | 六安市大宇高分子材料有限公司 | Manufacturing method for selective emitter solar battery |
| CN104112794B (en) * | 2014-07-28 | 2018-09-14 | 六安市大宇高分子材料有限公司 | A kind of manufacturing method of selective emitter solar battery |
| CN110571299A (en) * | 2019-08-29 | 2019-12-13 | 东方日升（常州）新能源有限公司 | Self-aligned buried gate passivation contact crystalline silicon solar cell and preparation method thereof |
| CN113972300A (en) * | 2021-10-20 | 2022-01-25 | 晶澳（扬州）太阳能科技有限公司 | Solar cell and preparation method thereof |
| CN114373808A (en) * | 2021-11-26 | 2022-04-19 | 江苏科来材料科技有限公司 | High-efficient crystal silicon battery |
| CN114373808B (en) * | 2021-11-26 | 2023-11-10 | 江苏科来材料科技有限公司 | High-efficiency crystalline silicon battery |
| CN114464707A (en) * | 2022-02-23 | 2022-05-10 | 中南大学 | Method for preparing N-type cell selective emitter by hydrogen plasma treatment |
| CN114464707B (en) * | 2022-02-23 | 2023-12-08 | 中南大学 | Method for preparing N-type battery selective emitter through hydrogen plasma treatment |
| CN115020544A (en) * | 2022-06-08 | 2022-09-06 | 中节能太阳能科技（镇江）有限公司 | Method for manufacturing boron-doped selective emitter N-type TOPCon battery |
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Application publication date: 20100901 |