CN101798182A - Preparation method of laminated ceramic composite - Google Patents
Preparation method of laminated ceramic composite Download PDFInfo
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- CN101798182A CN101798182A CN201010106602A CN201010106602A CN101798182A CN 101798182 A CN101798182 A CN 101798182A CN 201010106602 A CN201010106602 A CN 201010106602A CN 201010106602 A CN201010106602 A CN 201010106602A CN 101798182 A CN101798182 A CN 101798182A
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- ceramic composite
- laminated ceramic
- whisker
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Abstract
The invention discloses a preparation method of a laminated ceramic composite, which is used for solving the technical problem that the ceramic composite prepared by using the traditional preparation method has the defects of low volume fraction and forward interface. The preparation method comprises the steps of: preparing a crystal whisker preformed film on a glass substrate by using a tape casting method; depositing silicon carbide in the crystal whisker preformed film by a chemical gaseous-phase osmose process; preparing a crystal whisker film on a SiCw/SiC laminated ceramic composite layer by using the tape casting method; depositing silicon carbide again; and repeating such steps till the SiCw/SiC laminated ceramic composite is prepared. The method not only can reduce the damage to a reinforcer, but also can carry out cooperative control on the binary interface of a material system, improve the crystal whisker volume fraction of the laminated ceramic composite to 50% from 30 % in the prior art, and achieve 30-80 MPa tensile strength of the laminated ceramic composite under the condition of ensuring the toughness.
Description
Technical field
The present invention relates to a kind of preparation method of matrix material, particularly a kind of preparation method of laminated ceramic composite.
Background technology
Ceramic layered reference bionics thought is carried out the structure design of stupalith, makes intensity and defective irrelevant, becomes a kind of anti-defective material.Ceramic layered material mainly is laminated mutually by high-modulus and two kinds of stupaliths of low modulus.Wherein the main effect of high-modulus pottery is carrying and strengthening, and the main effect of low modulus pottery is a deflection crackle and toughness reinforcing.Weak interface layer bonded result causes this material to obtain toughness to sacrifice intensity, and therefore ceramic layered in the improved while of toughness, intensity decreases.
The investigator adds whisker or particle in ceramic layered, wish further to improve its obdurability.But the stratiform base substrate no matter which kind of moulding process prepares; generally all under air or protective atmosphere, carry out normal pressure or hot pressed sintering; sintering temperature is very high; bigger to the whisker damage; the interface is wayward; and the volume fraction that adds whisker is restricted, and can not give full play to the contribution of whisker to ceramic obdurability.
Document " Al
2O
3-TiB
2-SiC
wThe experimental study of composite ceramic material friction and wear characteristic. Deng Jianxin, Ai Xing, Zhao Jun, Li Jiuli. tribology journal, 1997,17 (4): 289 " a kind of composite ceramic material disclosed, researchist's hot pressed sintering under the condition of 1720 ℃ and 36MPa has made Al
2O
3-TiB
2-SiC
wComposite ceramic material, the result shows that SiC whisker percent by volume reaches 30% at most, and does not measure the tensile strength of matrix material.
Summary of the invention
In order to overcome low, the uppity deficiency in interface of laminated ceramic composite volume fraction of existing laminated ceramic composite preparation method preparation, the invention provides a kind of preparation method of laminated ceramic composite, adopt chemical vapor infiltration to prepare laminated ceramic composite in conjunction with casting method.Adopt casting method to prepare the whisker preform film on glass substrate, chemical vapor infiltration is depositing silicon carbide in whisker film precast body, at one deck SiC
wCurtain coating whisker film on the/SiC laminated ceramic composite, depositing silicon carbide once more, the circulation above-mentioned steps is finished SiC
wThe preparation of/SiC laminated ceramic composite.This method can not only reduce the damage to the enhancing body, and the binary interface of energy Collaborative Control material system, improves whisker volume fraction in the laminated ceramic composite, is guaranteeing that flexible simultaneously, can improve the intensity of laminated ceramic composite.
The technical solution adopted for the present invention to solve the technical problems: a kind of preparation method of laminated ceramic composite is characterized in comprising the steps:
(a) at first adopt the stable SiC of wet mixing Prepared by Ball Milling
wSlurry adopts casting method curtain coating whisker film on glass substrate, film thickness scope 150 μ m～1000 μ m, and the whisker percent by volume is controlled at 30～50%;
(b) adopt chemical vapor infiltration deposition SiC matrix, mode of deposition is as follows: trichloromethyl silane is the source material, and argon gas is a diluent gas, and flow is 1.5～2L/min, and hydrogen is carrier gas, and flow is 1.5～2L/min; The mol ratio of hydrogen and trichloromethyl silane is 10: 1, and depositing temperature is 1000～1100 ℃, and depositing time 80～100h finishes one deck SiC
wThe preparation of/SiC matrix material;
(c) at one deck SiC
wCurtain coating whisker film on the/SiC matrix material adopts chemical vapor infiltration deposition SiC matrix again, and condition is with (b);
(d) repeating step (a)～(c) forms SiC
w/ SiC laminated ceramic composite.
The invention has the beneficial effects as follows: the present invention adopts chemical vapor infiltration to prepare laminated ceramic composite in conjunction with casting method.Adopt casting method to prepare the whisker preform film on glass substrate, chemical vapor infiltration is depositing silicon carbide in whisker film precast body, at one deck SiC
wCurtain coating whisker film on the/SiC laminated ceramic composite, depositing silicon carbide once more, the circulation above-mentioned steps is finished SiC
wThe preparation of/SiC laminated ceramic composite.This method can not only reduce strengthening the damage of body, and the binary interface of energy Collaborative Control material system, the whisker volume fraction brings up to 50% by 30% of prior art in the laminated ceramic composite, guaranteeing flexible simultaneously, the tensile strength of laminated ceramic composite has reached 30～80MPa.
Below in conjunction with drawings and Examples the present invention is elaborated.
Description of drawings
Fig. 1 is preparation method's schema of laminated ceramic composite of the present invention.
Fig. 2 is three prepared shape ceramic composite material structure synoptic diagram layer by layer of the inventive method.
Among the figure, 1-SiC
w/ SiC composite bed, the interface between 2-SiC whisker and the SiC matrix, 3-SiC
wThe compound interface layer of/SiC.
Embodiment
With reference to Fig. 1, Fig. 2.Following examples with prepare three layer by layer the shape ceramic composite be example, the present invention is elaborated.At first utilize the chemical vapour infiltration method in the whisker film, to deposit the SiC matrix, finish one deck SiC
wThe preparation of/SiC composite bed 1; Again at one deck SiC
wCurtain coating silicon carbide whisker film deposits the SiC matrix again on the/SiC composite bed 1, and the said process that circulates at last obtains to have the SiC of the strong and weak coupling in binary interface
w/ SiC laminated ceramic composite.Interface 2 between SiC whisker and the SiC matrix, and SiC as can see from Figure 2
wThe compound interface layer 3 of/SiC.By the thickness of control interfacial layer, make the strong and weak rational Match in binary interface, improve SiC
wThe obdurability of/SiC laminated ceramic composite.
Embodiment 1:(1) adopt casting method to prepare the silicon carbide whisker film, film thickness is 150 μ m, and the whisker percent by volume is 40%;
(2) with trichloromethyl silane (CH
3SiCl
3, MTS) being the source material, argon gas is a diluent gas, and flow is 2L/min, and hydrogen is carrier gas, and flow is 2L/min.H
2With the mol ratio of MTS be 10: 1, adopt the chemical vapour infiltration method on SiC whisker film, to deposit the SiC matrix, depositing temperature is 1000 ℃, depositing time is 100h;
(3) one-sided curtain coating SiC on SiC
wFilm, whisker film thickness are 500 μ m, and the whisker percent by volume is 40%;
(4) at SiC
wDeposit SiC on the film, depositing time is 100h;
(5) opposite side curtain coating SiC on SiC
wFilm, whisker film thickness are 500 μ m, and the whisker percent by volume is 40%;
(6) at SiC
wDeposit SiC on the film, depositing time is 100h, obtains three layers of SiC
w/ SiC laminated ceramic composite.
The SiC that present embodiment is prepared
wThe Instron1196 electronic universal experimental machine test that/SiC laminated ceramic composite is produced through Britain Instron company, tensile strength is 30MPa.
Embodiment 2:(1) adopt casting method to prepare SiC
wFilm, whisker film thickness are 500 μ m, and the whisker percent by volume is 50%;
(2) with trichloromethyl silane (CH
3SiCl
3, MTS) being the source material, argon gas is a diluent gas, and flow is 1.8L/min, and hydrogen is carrier gas, and flow is 1.8L/min.H
2With the mol ratio of MTS be 10: 1, adopt the chemical vapour infiltration method on SiC whisker film, to deposit the SiC matrix, depositing temperature is 1100 ℃, depositing time is 90h;
(3) a side curtain coating SiC on SiC
wFilm, whisker film thickness are 500 μ m, and the whisker percent by volume is 50%;
(4) at SiC
wDeposit SiC on the film, depositing time is 100h;
(5) another side curtain coating SiC on SiC
wFilm, whisker film thickness are 500 μ m, and the whisker percent by volume is 50%;
(6) at SiC
wDeposit SiC on the film, depositing time is 100h, obtains three layers of SiC
w/ SiC laminated ceramic composite.
The SiC that present embodiment is prepared
wThe Instron1196 electronic universal experimental machine test that/SiC laminated ceramic composite is produced through Britain Instron company, tensile strength is 72MPa.
Embodiment 3:(1) adopt casting method to prepare SiC
wFilm, whisker film thickness are 1000 μ m, and the whisker percent by volume is 30%;
(2) with trichloromethyl silane (CH
3SiCl
3, MTS) being the source material, argon gas is a diluent gas, and flow is 1.5L/min, and hydrogen is carrier gas, and flow is 1.5L/min.H
2With the mol ratio of MTS be 10: 1, adopt the chemical vapour infiltration method on SiC whisker film, to deposit the SiC matrix, depositing temperature is 1050 ℃, depositing time is 80h;
(3) two sides curtain coating SiC all on SiC
wFilm, whisker film thickness are 500 μ m, and the whisker percent by volume is 30%;
(4) at SiC
wDeposit SiC on the film, depositing time is 100h, obtains three layers of SiC
w/ SiC laminated ceramic composite.
The SiC that present embodiment is prepared
wThe Instron1196 electronic universal experimental machine test that/SiC laminated ceramic composite is produced through Britain Instron company, tensile strength is 80MPa.
Claims (1)
1. the preparation method of a laminated ceramic composite is characterized in that comprising the steps:
(a) at first adopt the stable SiC of wet mixing Prepared by Ball Milling
wSlurry adopts casting method curtain coating whisker film on glass substrate, film thickness scope 150 μ m～1000 μ m, and the whisker percent by volume is controlled at 30～50%;
(b) adopt chemical vapor infiltration deposition SiC matrix, mode of deposition is as follows: trichloromethyl silane is the source material, and argon gas is a diluent gas, and flow is 1.5～2L/min, and hydrogen is carrier gas, and flow is 1.5～2L/min; The mol ratio of hydrogen and trichloromethyl silane is 10: 1, and depositing temperature is 1000～1100 ℃, and depositing time 80～100h finishes one deck SiC
wThe preparation of/SiC matrix material;
(c) at one deck SiC
wCurtain coating whisker film on the/SiC matrix material adopts chemical vapor infiltration deposition SiC matrix again, and condition is with (b);
(d) repeating step (a)～(c) forms SiC
w/ SiC laminated ceramic composite.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010106602A CN101798182A (en) | 2010-02-04 | 2010-02-04 | Preparation method of laminated ceramic composite |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010106602A CN101798182A (en) | 2010-02-04 | 2010-02-04 | Preparation method of laminated ceramic composite |
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ID=42594047
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102503430A (en) * | 2011-09-23 | 2012-06-20 | 中国科学院上海硅酸盐研究所 | Method for preparing reaction-sintered silicon carbide ceramic by improved tape casting process |
| CN102964139A (en) * | 2012-12-04 | 2013-03-13 | 西北工业大学 | Preparation method of whisker and particle synergistically toughened laminar ceramic matrix composite |
| CN104119094A (en) * | 2014-08-08 | 2014-10-29 | 苏州宏久航空防热材料科技有限公司 | SiC whisker-reinforced ceramic-based composite plate and preparation method thereof |
| CN105642877A (en) * | 2016-01-26 | 2016-06-08 | 辽宁科技大学 | High-strength composite submersed nozzle combined with silicon carbide crystal whiskers and manufacturing method |
-
2010
- 2010-02-04 CN CN201010106602A patent/CN101798182A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102503430A (en) * | 2011-09-23 | 2012-06-20 | 中国科学院上海硅酸盐研究所 | Method for preparing reaction-sintered silicon carbide ceramic by improved tape casting process |
| CN102503430B (en) * | 2011-09-23 | 2013-10-16 | 中国科学院上海硅酸盐研究所 | Method for preparing reaction-sintered silicon carbide ceramic by improved tape casting process |
| CN102964139A (en) * | 2012-12-04 | 2013-03-13 | 西北工业大学 | Preparation method of whisker and particle synergistically toughened laminar ceramic matrix composite |
| CN102964139B (en) * | 2012-12-04 | 2014-11-12 | 西北工业大学 | Preparation method of whisker and particle synergistically toughened laminar ceramic matrix composite |
| CN104119094A (en) * | 2014-08-08 | 2014-10-29 | 苏州宏久航空防热材料科技有限公司 | SiC whisker-reinforced ceramic-based composite plate and preparation method thereof |
| CN104119094B (en) * | 2014-08-08 | 2016-03-02 | 苏州宏久航空防热材料科技有限公司 | Ceramic base composition board of a kind of SiC whisker reinforcement and preparation method thereof |
| CN105642877A (en) * | 2016-01-26 | 2016-06-08 | 辽宁科技大学 | High-strength composite submersed nozzle combined with silicon carbide crystal whiskers and manufacturing method |
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Open date: 20100811 |