CN101626036A - Thin film transistor, method of manufacturing the thin film transistor and flat panel display device having the thin film transistor - Google Patents
Thin film transistor, method of manufacturing the thin film transistor and flat panel display device having the thin film transistor Download PDFInfo
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- CN101626036A CN101626036A CN200910133952A CN200910133952A CN101626036A CN 101626036 A CN101626036 A CN 101626036A CN 200910133952 A CN200910133952 A CN 200910133952A CN 200910133952 A CN200910133952 A CN 200910133952A CN 101626036 A CN101626036 A CN 101626036A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 20
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- 150000001875 compounds Chemical class 0.000 claims abstract description 44
- 239000010408 film Substances 0.000 claims abstract description 34
- 238000000034 method Methods 0.000 claims description 30
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 27
- 229910052809 inorganic oxide Inorganic materials 0.000 claims description 27
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 16
- 239000011787 zinc oxide Substances 0.000 claims description 12
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 11
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 11
- 229910052782 aluminium Inorganic materials 0.000 claims description 11
- 229910052733 gallium Inorganic materials 0.000 claims description 11
- 229910052735 hafnium Inorganic materials 0.000 claims description 11
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 11
- 229910052738 indium Inorganic materials 0.000 claims description 11
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 11
- 229910052718 tin Inorganic materials 0.000 claims description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 10
- 239000011248 coating agent Substances 0.000 claims description 9
- 238000000576 coating method Methods 0.000 claims description 9
- 229910005265 GaInZnO Inorganic materials 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 8
- 235000012239 silicon dioxide Nutrition 0.000 claims description 8
- 239000000377 silicon dioxide Substances 0.000 claims description 8
- 239000004411 aluminium Substances 0.000 claims description 7
- 230000015572 biosynthetic process Effects 0.000 claims description 7
- 238000000059 patterning Methods 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 6
- 239000012212 insulator Substances 0.000 claims description 5
- 150000002500 ions Chemical class 0.000 claims description 5
- 238000000137 annealing Methods 0.000 claims description 4
- 229910007717 ZnSnO Inorganic materials 0.000 claims description 3
- 239000004973 liquid crystal related substance Substances 0.000 claims description 3
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims 8
- 229910052720 vanadium Inorganic materials 0.000 claims 8
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 claims 8
- 229910052726 zirconium Inorganic materials 0.000 claims 8
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 claims 1
- 229910001195 gallium oxide Inorganic materials 0.000 claims 1
- 229910000449 hafnium oxide Inorganic materials 0.000 claims 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims 1
- 230000004913 activation Effects 0.000 abstract 3
- 230000008569 process Effects 0.000 description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 230000006378 damage Effects 0.000 description 6
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 239000000463 material Substances 0.000 description 5
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- 230000005540 biological transmission Effects 0.000 description 4
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
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- 229920005591 polysilicon Polymers 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 3
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910016048 MoW Inorganic materials 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
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- 230000008439 repair process Effects 0.000 description 2
- 230000009183 running Effects 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 229910005533 GaO Inorganic materials 0.000 description 1
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- 238000005468 ion implantation Methods 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
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- Liquid Crystal (AREA)
- Electroluminescent Light Sources (AREA)
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Abstract
A thin film transistor, a method of manufacturing the thin film transistor, and a flat panel display device including the thin film transistor. The thin film transistor includes: a gate electrode formed on a substrate; a gate insulating film formed on the gate electrode; an activation layer formed on the gate insulating film; a passivation layer including a compound semiconductor oxide, formed on the activation layer; and source and drain electrodes that contact the activation layer.
Description
Cross reference to related application
The application requires the rights and interests of on July 8th, 2008 to the korean patent application 10-2008-0066002 of Korea S Department of Intellectual Property submission, and its disclosure is incorporated herein by reference.
Technical field
Each side of the present invention relates to thin-film transistor, make the method for this thin-film transistor and comprise the panel display apparatus of this thin-film transistor.
Background technology
Thin-film transistor generally includes: active layer comprises channel region, source region and drain region; And grid, be formed on the channel region.Grid is by gate insulating film and active layer electric insulation.
Active layer is usually by forming such as semi-conducting materials such as amorphous silicon or polysilicons.But,, be difficult to realize high-speed driving circuit owing to its electron mobility is low if active layer is formed by amorphous silicon.If active layer is formed by polysilicon, need to increase the separate compensation circuit because of threshold voltage is inhomogeneous.
The conventional method of using low temperature polycrystalline silicon (LTPS) to make thin-film transistor comprises such as expensive process such as laser annealings.In addition, this method is difficult to be applied to larger sized substrate.
In order to overcome the above problems, studied recently compound semiconductor as active layer.For example, the open 2004-273614 of Japan Patent discloses the compound semiconductor that will contain zinc oxide (ZnO) or contain zinc oxide (ZnO) is used as active layer as principal component thin-film transistor.
Compound semiconductor is be evaluated as the stabilizing material with amorphous shape.If as active layer, then this compound semiconductor has plurality of advantages with such compound semiconductor, because thin-film transistor can use existing processes equipment to make being lower than under 350 ℃ the temperature.In addition, can omit ion implantation technology.
But when the film that forms on to compound semiconductor carried out etching, compound semiconductor can be by plasma damage.This damage has reduced the electric property of compound semiconductor, causes the threshold voltage of thin-film transistor to change.
Summary of the invention
Each side of the present invention provide a kind of at passivation layer formation and/or patterning during have the damage-resistant of improvement thin-film transistor, make the method for described thin-film transistor and have the panel display apparatus of described thin-film transistor.
Each side of the present invention provides a kind of and resists thin-film transistor that exterior light damages, make the method for described thin-film transistor and have the panel display apparatus of described thin-film transistor.
Each side of the present invention provides a kind of thin-film transistor, comprising: substrate; Be formed on the grid on the substrate; Be formed on the gate insulating film on the grid; Be formed on the active layer that comprises the compound semiconductor oxide on the gate insulating film; Be formed on the passivation layer on the active layer; And source electrode that contacts with active layer and drain electrode.Described passivation layer is formed by inorganic oxide.
According to another aspect of the present invention, provide a kind of method of making thin-film transistor, comprising: on substrate, form grid; On grid, form gate insulating film; On gate insulating film, form the active layer that comprises the compound semiconductor oxide; On active layer, form the passivation layer that comprises inorganic oxide; And the formation source electrode and the drain electrode that contact with active layer.
According to a further aspect of the invention, provide a kind of panel display apparatus, comprising: the first relative substrate and second substrate; Be formed on the pixel electrode on first substrate, be formed on pixel electrode scan line and data wire on every side; With the thin-film transistor that pixel electrode, scan line and data wire link to each other, be used to control the signal that offers each pixel electrode; And the liquid crystal that is injected into the seal cavity between first substrate and second substrate.Each thin-film transistor comprises: be formed on the grid on first substrate; By the active layer that the compound semiconductor oxide forms, described active layer is by gate insulating film and gate insulator; Be formed on the passivation layer on the active layer; And source electrode that contacts with active layer and drain electrode.Described passivation layer is formed by inorganic oxide.
According to a further aspect of the invention, provide a kind of panel display apparatus, comprising: the first relative substrate and second substrate; Be formed on the organic light emitting apparatus on first substrate; Be formed on organic light emitting apparatus scan line and data wire on every side; And the thin-film transistor that links to each other with scan line, data wire and organic light emitting apparatus.Each organic light emitting apparatus comprises first electrode, organic thin film layer and second electrode.Each thin-film transistor comprises: be formed on the grid on first substrate; Compound semiconductor oxide active layer by gate insulating film and gate insulator; Be formed on the inorganic oxide passivation layer on the active layer; And source electrode that contacts with active layer and drain electrode.
According to a further aspect of the invention, during source electrode and drain electrode formation, passivation layer can be used as etching stop layer, even active layer is damaged, also can prevent the contaminated and/or damage of channel layer.Passivation layer can make active layer be repaired by annealing process subsequently.Therefore, each side of the present invention can prevent that thin-film transistor from making electric property worsen because of active layer is impaired, and can improve the substrate performance.Passivation layer is formed by the less relatively inorganic oxide of band gap, thereby makes it can absorb exterior light effectively.
Others of the present invention and/or advantage will partly be set forth at the following description book, and its partial content is conspicuous in specification, perhaps can understand by practice of the present invention.
Description of drawings
From below in conjunction with the description of accompanying drawing to execution mode, these and/or other aspect of the present invention and advantage will become apparent and be easier to understand:
Fig. 1 is the cross-sectional view of the thin-film transistor of each side according to the present invention;
Fig. 2 A～2D is the cross-sectional view of manufacturing according to the method for the thin-film transistor of exemplary embodiment of the invention;
Fig. 3 A and 4A are the curve charts that the expression leakage current changes with gate voltage;
Fig. 3 B and 4B are expression threshold voltage curve charts over time;
Fig. 5 A is an electric property curve chart of representing not have the thin-film transistor of passivation layer;
Fig. 5 B and 5C are the electric property curve charts that expression has the thin-film transistor of passivation layer;
Fig. 6 A and 6B are the electric property curve charts of expression thin-film transistor of each side according to the present invention;
Fig. 7 A and 7B are the reliability curve figure of expression thin-film transistor of each side according to the present invention;
Fig. 8 A and 8B are that the transistorized transmission performance of expression absorbs the curve chart that changes with exterior light;
Fig. 9 is the cross-sectional view of thin-film transistor according to an illustrative embodiment of the invention;
Figure 10 is the vertical view according to the panel display apparatus with thin-film transistor of exemplary embodiment of the invention;
Figure 11 A and 11B are respectively vertical view and the cross-sectional views according to the panel display apparatus with thin-film transistor of exemplary embodiment of the invention; With
Figure 12 is the cross-sectional view of the organic light emitting apparatus of Figure 11 A and Figure 11 B.
Embodiment
Now will be in detail with reference to embodiments of the present invention, embodiment represents that in the accompanying drawings wherein, identical Reference numeral refers to similar elements in the text.For each side of the present invention is described, execution mode is described below with reference to accompanying drawing.Described illustrative embodiments can not deviate from the spirit or scope of the present invention with various different modes modifications.Therefore, accompanying drawing and explanation are considered to qualitative explanation and are unrestricted.In addition, when a certain element was called as " on another element ", it can perhaps have one or more insertion elements to insert wherein and indirectly on this element directly on another element.Equally, when a certain element was called as " linking to each other with another element ", it can directly link to each other with this element, perhaps can have one or more insertion elements to insert and wherein and indirectly link to each other with this element.
Fig. 1 is the cross-sectional view according to the thin-film transistor of exemplary embodiment of the invention.In this thin-film transistor, resilient coating 11 is formed on the substrate 10, and grid 12 is formed on the resilient coating 11.Be formed on the gate insulating film 13 by the active layer 14 of gate insulating film 13, be positioned on the grid 12 with grid 12 insulation.Active layer 14 can be formed by the compound semiconductor oxide.Channel region 14a, source region 14b and drain region 14c are provided in active layer 14.Channel region 14a and grid 12 are overlapping.
Fig. 2 A～2D is the cross-sectional view of manufacturing according to the method for the thin-film transistor of exemplary embodiment of the invention.With reference to Fig. 2 A, resilient coating 11 is formed on the substrate 10, and grid 12 is formed on the resilient coating 11.Gate insulating film 13 is formed on grid 12 and the resilient coating 11.Substrate 10 can be such as silicon semiconductor substrates such as (Si), such as insulated substrate or metal substrates such as glass or plastics.Grid 12 can comprise Al, Cr or MoW, perhaps can comprise conducting polymer.Gate insulating film 13 can be by such as SiO
2, SiN
XOr Ga
2O
3Form Deng insulating material.
With reference to Fig. 2 B, active layer 14 is formed on the gate insulating film 13, is positioned on the grid 12.Active layer 14 comprises channel region 14a, source region 14b and drain region 14c.Active layer 14 can be formed by compound semiconductor oxide or zinc oxide.For example, active layer 14 can be formed by ZnO, ZnGaO, ZnInO, ZnSnO or GaInZnO.
With reference to Fig. 2 C, subsequently passivation layer 15 is carried out patterning, make source region 14b and drain region 14c exposed contact hole 15a thereby form.Passivation layer 15 is formed by inorganic oxide, and this inorganic oxide comprises the element of for example selecting from the group that is made of gallium (Ga), indium (In), tin (Sn), zirconium (Zr), hafnium (Hf) and vanadium (V), perhaps can comprise silicon (Si) or aluminium (Al).Passivation layer 15 can be by forming with compound semiconductor oxide identical materials.For example, passivation layer can be formed by ZnO, ZnGaO, ZnInO, ZnSnO, GaO, HfO or GaInZnO.Perhaps, passivation layer 15 comprises some elements that comprise in the compound semiconductor oxide at least, as Ga
2O
3Deng.Passivation layer 15 also can comprise silicon dioxide (SiO
2), aluminium oxide (Al
2O
3) or aluminum oxynitride (AlON).
When using silicon dioxide, set depositing temperature and be lower than 300 ℃, set oxygen partial pressure and be at least 50%.When using aluminium oxide, set depositing temperature and be lower than 300 ℃, and setting aluminium (Al) content is 2～50%.When using aluminum oxynitride, set oxygen partial pressure and be about 4%, in sputter deposition craft, in nitrogen and argon atmosphere, use aluminium oxide (Al
2O
3) target.
With reference to Fig. 2 D, on passivation layer 15 and among the contact hole 15a, form after the conductive layer, conductive layer is carried out patterning, thereby form source electrode 16a and the drain electrode 16b that contacts with drain region 14c by contact hole 15a and source region 14b.Source electrode 16a and drain electrode 16b can be formed by metal, for example Mo, MoW, Al, AlNd or AlLiLa etc.
Conductive layer is being carried out in the process of patterning, passivation layer 15 can be used as the etching stop layer that helps etching technics.In etching technics, protect the channel region 14a of active layer 14 thus.Also prevented since the organic material of subsequent technique to the pollution of active layer 14.
But when passivation layer 15 is when being formed by the material that has low etching selection with respect to compound semiconductor, active layer 14 can be impaired in the etching process of contact hole 15a.Should correspondingly select material and/or lithographic method thus.When active layer 14 is impaired, if after forming source electrode 16a and drain electrode 16b, under 200～350 ℃ temperature, at about 10e
-2Vacuum in and at nitrogen (N
2) and oxygen (O
2) atmosphere in make active layer 14 annealing, can repair active layer 14.
The electric property of inferring compound semiconductor produces because of plasma damage worsens the anoxic that is mainly caused by the surface grating breakage.Therefore, each side of the present invention is protected active layer 14 by using inorganic oxide passivation layer 15.Also allow to repair active layer 14 by annealing process subsequently.The reparation of inferring active layer 14 is results of the oxygen diffusion of passivation layer 15.
Fig. 3 A represents not contain the curve chart that the leakage current Id (A) of the thin-film transistor of passivation layer changes with gate voltage Vg.Fig. 3 B is this transistorized threshold voltage vt h time history plot of expression.Fig. 4 A is that each side comprises the curve chart that the leakage current Id (A) of the thin-film transistor of passivation layer 15 changes with gate voltage Vg according to the present invention in expression.Fig. 4 B is a curve chart of representing that this transistorized threshold voltage vt h that comprises passivation layer 15 changes with stress time.During source electrode 16a and drain electrode 16b are applied the Vd voltage of 10V, carry out 50 hours test.Set gate voltage Vg to guarantee the electric current of 3 μ A.
Under the situation of Fig. 3 A and 3B, threshold voltage vt h passes in just (+) in time to unexpected increase, and threshold voltage increases it can not accurately be measured after about 5 hours.On the contrary, under the situation of Fig. 4 A and 4B, the fluctuation width of threshold voltage vt h is lower than about 1V, and keeps stable above 50 hours.
In having the conventional thin-film transistor of polysilicon active layer, passivation layer is usually by silicon dioxide (SiO
2), silicon nitride (SiN
x) or aluminium oxide (Al
2O
3) form.But, under the situation of thin-film transistor, if passivation layer is the silicon dioxide (SiO that is formed by routine with the active layer that forms by the compound semiconductor oxide
2), silicon nitride (SiN
x) or aluminium oxide (Al
2O
3) form, its electric property can seriously descend.Infer that this decline is to be caused by the plasma in the depositing operation.If produce damage, the carrier concentration of active layer may increase owing to anoxic.In addition, cut-off current may increase because of carrier concentration, causes its S factor to reduce.
Fig. 5 A is an electric property curve chart of representing not form in it thin-film transistor of passivation layer.Fig. 5 B and 5C represent to form silicon dioxide (SiO respectively in it
2) passivation layer and aluminium oxide (Al
2O
3) the electric property curve chart of thin-film transistor of passivation layer.These passivation layers use common process to form.Shown in Fig. 5 B and 5C, forming silicon dioxide (SiO
2) passivation layer and aluminium oxide (Al
2O
3) after the passivation layer, the electric property of thin-film transistor reduces, shown in I-V (current-voltage) curve.
Fig. 6 A has represented to comprise the result that the thin-film transistor of GaInZnO passivation layer and GaInZnO active layer produces.Fig. 6 B has represented to comprise Ga
2O
3The result that the thin-film transistor of passivation layer and GaInZnO active layer produces.3.3V threshold voltage when not comprising passivation layer with the thin-film transistor shown in Fig. 5 A is compared, and their threshold voltage has increased about 2.4V (Fig. 6 A), and has reduced about 0.2V (Fig. 6 B).
Fig. 7 A and 7B be expression each side according to the present invention comprise active layer 14 and Ga
2O
3The reliability curve figure of the thin-film transistor of passivation layer, active layer 14 forms by the pressure deposit GaInZnO at 3mTorr.In Fig. 7 A and 7B, dotted line is represented threshold voltage vt h, and solid line is represented noise or unexpected change in voltage.Source voltage and drain voltage are 10V, set gate voltage to guarantee the constant current of 3 μ A.
After 50 hours (Fig. 7 A) and 10000 hours (Fig. 7 B) carried out in test, under two kinds of situations, slight variation is arranged all.Represent the dotted line that threshold voltage vt h changes from Fig. 7, infer after 30000 hours, to have 1.2V or lower variation.
The passivation layer that stable electric property forms owing to inorganic oxide.In other words, because passivation layer comprises inorganic oxide, the excess carrier that produce in passivation layer 15 easier catching (inhibition) depositing operations, thus prevent that electric property from worsening because of the charge carrier of surplus.
And passivation layer of the present invention prevents that transistor performance from worsening because of exterior light.Although compound semiconductor GaInZnO has large band gap, if its absorbing light then can produce superfluous charge carrier cause leakage current to produce, and transistorized performance can reduce.Particularly compare with top gate structure, bottom grating structure is more responsive to exterior light.
Shown in Fig. 5 B, if passivation layer 15 is by the silicon dioxide (SiO of large band gap
2) form, then can not effectively stop exterior light.Therefore, shown in Fig. 8 A, transistorized transmission performance reduces.In Fig. 8 A, when source electrode 16a was applied the Vd voltage of 5.1V with drain electrode 16b, thin-film transistor was applied in the light of 0～20000 lux.
But shown in Fig. 6 B, in thin-film transistor of the present invention, passivation layer is by such as Ga
2O
3Deng having relative inorganic oxide formation, make that exterior light is easy to absorb than spatia zonularis.Therefore, shown in Fig. 8 B, active layer is by passivation layer protection and not damaged by exterior light, and has prevented that the oxygen that the optical absorption because of light produces from separating, and kept transistorized transmission performance.
The picture quality of the display unit of this thin-film transistor that active layer can cause comprising because of the extinction deterioration reduces and power consumption increases.Therefore, Chang Gui amorphous silicon film transistor has the double-gate structure that can reduce leakage current, leakage (LDD) structure or the bias structure of light dope usually.But the drain current that has in this case, on-state reduces and increases the problem of additional technique.But for the present invention, because passivation layer is formed by the inorganic oxide of narrow band gap, exterior light is effectively absorbed, and is not used to compensate independent technology or the device that electric property descends so do not need to increase.
Fig. 9 is the cross-sectional view according to the thin-film transistor of another illustrative embodiments of the present invention.Though the passivation layer 15 of the thin-film transistor of Fig. 1 is to stride across active layer 14 and dielectric film 13 and form, and the thin-film transistor of Fig. 9 comprises the passivation layer 25 that only forms on active layer.In addition, as shown in Figure 1, source electrode 26a contacts with drain region 14c with the source region 14b of active layer 14 with drain electrode 26b, rather than the contact hole that passes in the passivation layer 15 contacts with it.
The thin-film transistor of Fig. 9 can use the method manufacturing identical with the thin-film transistor of Fig. 1, difference is not to be by passivation layer 15 patternings are formed contact hole 15a, but when patterning, part passivation layer 25 is removed, make passivation layer 25 exist only on the part active layer 14.
The thin-film transistor of each side can be used for panel display apparatus according to the present invention.Figure 10 is the vertical view that comprises the panel display apparatus of the thin-film transistor of each side according to the present invention.Panel display apparatus comprises the display panel 100 of display image.Display panel 100 comprises the first relative substrate 110 and second substrate 120, and liquid crystal layer 130 disposed therein.The matrix arrangements of scan line 111 and data wire 112 and forms pixel 113 on matrix on first substrate 110.
Each pixel 113 comprises pixel electrode 115 and thin-film transistor 114.Thin-film transistor 114 is connected with data wire 112 with scan line 111.The signal that thin-film transistor 114 control provides to each pixel electrode 115 from scan line 111 and data wire 112.Thin-film transistor 114 can come example by the thin-film transistor of Fig. 1 or Fig. 9, and can make according to the manufacture method of Fig. 2 A～2D.
Figure 11 A and 11B are the vertical view and the cross-sectional views of another illustrative embodiments of panel display apparatus.This panel display apparatus comprises the display panel 200 of display image.Display panel 200 comprises the substrate 210 with pixel region 220 and is arranged in pixel region 220 non-pixel region 230 on every side.A plurality of organic light emitting apparatus 300 are arranged in the matrix of scan line 224 and data wire 226 and with it and are connected, and described matrix is formed on the substrate 210.Scan line 224 and data wire 226 are stretched in the pixel region 200.In non-pixel region 230, form power line (not shown) that makes organic light emitting apparatus 300 runnings and scanner driver 234 and the data driver 236 of signal provision being given scan line 224 and data wire 226.
With reference to Figure 12, each organic light emitting apparatus 300 comprise anode 317, negative electrode 320 and be formed on anode 317 and negative electrode 320 between organic thin film layer 319.Organic thin film layer 319 comprises hole transmission layer, organic luminous layer and the electron transfer layer that piles up.Organic thin film layer 319 also can comprise hole injection layer and electron injecting layer.Organic light emitting apparatus 300 can further comprise the thin-film transistor of control organic light emitting apparatus 300 runnings and keep the capacitor of signal.Thin-film transistor with Fig. 1 or Fig. 9 structure can be made according to the example fabrication method of the present invention shown in Fig. 2 A～2D.
With reference to Figure 11 A and 12, in each organic light emitting apparatus 300, resilient coating 11 is formed on the substrate 210, and grid 12 is formed on the resilient coating 11 in the pixel region 220.Scan line 224 is connected with the grid 12 and the scanner driver 234 of organic light emitting apparatus 300.Data wire 226 makes organic light emitting apparatus 300 be connected with data driver 236.The pad 228 that receives external signal can be formed in the non-pixel region 230.The active layer 14 that comprises channel region, source region and drain region is formed on the grid 12.Active layer 14 is by gate insulating film 13 and grid 12 electric insulations.
Organic levelling blanket 17 is formed on source electrode 16a and the drain electrode 16b.On levelling blanket 17, form the hole that drain electrode 16b is exposed.Anode 317 is connected with drain electrode 16b by the hole.Pixel defines film 318 and is formed on the levelling blanket 17 and has the hole that anode 317 is exposed.Organic thin film layer 319 is formed on the exposed anode 317, defines on the film 318 and with organic thin film layer 319 and contacts and negative electrode 320 is formed on pixel.
With reference to Figure 11 B, the hermetic sealing substrate 400 of sealing pixel region 220 is arranged on the upper substrate 210.Hermetic sealing substrate 400 engages with upper substrate 210 by sealant 410, thereby finishes display panel 200.
Though illustrated and illustrated some illustrative embodiments of the present invention, but what those skilled in the art should understand that is, can change on these illustrative embodiments but do not deviate from principle of the present invention and spirit, scope of the present invention is limited by claims and equivalent thereof.
Claims (36)
1, a kind of thin-film transistor comprises:
Substrate;
Be formed on the grid on the described substrate;
Be formed on the gate insulating film on described grid and the described substrate;
Be formed on the active layer that also passes through described gate insulating film and described gate insulator on the described gate insulating film, described active layer comprises compound semiconductor oxide or zinc oxide;
Be formed on the passivation layer on the described active layer, comprise inorganic oxide; With
The source electrode and the drain electrode that contact with described active layer.
2, thin-film transistor as claimed in claim 1, wherein said source electrode contacts with described active layer by the contact hole that is formed in the described passivation layer with drain electrode.
3, thin-film transistor as claimed in claim 1, wherein said compound semiconductor oxide comprises zinc oxide.
4, thin-film transistor as claimed in claim 3, wherein said compound semiconductor oxide is by at least a ion doping in gallium, indium, tin, zirconium, hafnium and the vanadium.
5, thin-film transistor as claimed in claim 1, wherein said inorganic oxide comprise the element that also comprises in the described compound semiconductor oxide.
6, thin-film transistor as claimed in claim 5, wherein said compound semiconductor oxide comprises gallium, indium, tin, zirconium, hafnium, vanadium or their combination.
7, thin-film transistor as claimed in claim 1, wherein said inorganic oxide comprises silicon or aluminium.
8, thin-film transistor as claimed in claim 1, wherein said inorganic oxide comprises silicon dioxide, aluminium oxide, gallium oxide, hafnium oxide or aluminum oxynitride.
9, thin-film transistor as claimed in claim 1 further comprises the resilient coating that is formed between described substrate and the described grid.
10, a kind of method of making thin-film transistor comprises:
On substrate, form grid;
On described grid, form gate insulating film;
On described gate insulating film, form the active layer that comprises compound semiconductor oxide or zinc oxide;
On described active layer, form the passivation layer that comprises inorganic oxide; With
Form the source electrode and the drain electrode that contact with described active layer.
11, the method for manufacturing thin-film transistor as claimed in claim 10, the formation of wherein said passivation layer comprises: form contact hole in described passivation layer.
12, the method for manufacturing thin-film transistor as claimed in claim 11, the formation of wherein said source electrode and drain electrode comprises:
Forming conductive layer on the described passivation layer and in described contact hole; With
Described conductive layer is carried out patterning form described source electrode and drain electrode, described source electrode contacts with described active layer by described contact hole with drain electrode.
13, the method for manufacturing thin-film transistor as claimed in claim 10 further comprises making described passivation layer annealing.
14, the method for manufacturing thin-film transistor as claimed in claim 10, wherein said compound semiconductor oxide comprises zinc oxide.
15, the method for manufacturing thin-film transistor as claimed in claim 14, wherein said compound semiconductor oxide is by at least a ion doping in gallium, indium, tin, zirconium, hafnium and the vanadium.
16, the method for manufacturing thin-film transistor as claimed in claim 10, wherein said inorganic oxide comprise the element that also comprises in the described compound semiconductor oxide.
17, the method for manufacturing thin-film transistor as claimed in claim 16, wherein said compound semiconductor oxide comprises gallium, indium, tin, zirconium, hafnium, vanadium or their combination.
18, the method for manufacturing thin-film transistor as claimed in claim 10, wherein said inorganic oxide comprises silicon or aluminium.
19, the method for manufacturing thin-film transistor as claimed in claim 10, the formation of wherein said source electrode and drain electrode comprise described passivation layer as etching stop layer.
20, the method for manufacturing thin-film transistor as claimed in claim 10 further is included on the described substrate and forms resilient coating.
21, a kind of panel display apparatus comprises:
Relative first substrate and second substrate;
Be arranged in the pixel electrode on first substrate;
Be arranged on first substrate and scan line and data wire around described pixel electrode;
Link to each other with described scan line, data wire and pixel electrode with the thin-film transistor of the operation of control pixel electrode, each described thin-film transistor comprises,
Be formed on the grid on described first substrate,
Be formed on the gate insulating film on described grid and described first substrate,
Be formed on the active layer that also passes through described gate insulating film and described gate insulator on the described gate insulating film, described active layer comprises compound semiconductor oxide or zinc oxide,
Be formed on the passivation layer that comprises inorganic oxide on the described active layer and
The source electrode and the drain electrode that contact with described active layer;
Be arranged in the public electrode on described second substrate; With
Be injected into the liquid crystal layer in the space between described first substrate and second substrate.
22, panel display apparatus as claimed in claim 21, wherein said source electrode contacts with described active layer by the contact hole that is formed in the described passivation layer with drain electrode.
23, panel display apparatus as claimed in claim 21, wherein said compound semiconductor oxide comprises zinc oxide.
24, panel display apparatus as claimed in claim 23, wherein said compound semiconductor oxide is by at least a ion doping in gallium, indium, tin, zirconium, hafnium and the vanadium.
25, panel display apparatus as claimed in claim 21, wherein said inorganic oxide comprise the element that also comprises in the described compound semiconductor oxide.
26, panel display apparatus as claimed in claim 25, wherein said compound semiconductor oxide comprises gallium, indium, tin, zirconium, hafnium, vanadium or their combination.
27, panel display apparatus as claimed in claim 21, wherein said inorganic oxide comprises silicon or aluminium.
28, a kind of panel display apparatus comprises:
Relative first substrate and second substrate;
Be arranged in the organic light emitting apparatus on described first substrate;
Be arranged on described first substrate and scan line and data wire around described organic light emitting apparatus;
Layout links to each other with described scan line, data wire and organic light emitting apparatus is used to control the thin-film transistor of the operation of organic light emitting apparatus, and each described thin-film transistor comprises,
Be formed on the grid on described first substrate,
Be formed on the gate insulating film on described grid and described first substrate,
Be formed on the active layer that also passes through described dielectric film and described gate insulator on the described gate insulating film, described active layer comprises compound semiconductor oxide or zinc oxide,
Be formed on the passivation layer that comprises inorganic oxide on the described active layer and
The source electrode and the drain electrode that contact with described active layer.
29, panel display apparatus as claimed in claim 28, wherein said source electrode contacts with described active layer with the hole that drain electrode extends through in the described passivation layer.
30, panel display apparatus as claimed in claim 28, wherein said compound semiconductor oxide comprises zinc oxide.
31, panel display apparatus as claimed in claim 30, wherein said compound semiconductor oxide is by at least a ion doping in gallium, indium, tin, zirconium, hafnium and the vanadium.
32, panel display apparatus as claimed in claim 28, wherein said inorganic oxide comprise the element that also comprises in the described compound semiconductor oxide.
33, panel display apparatus as claimed in claim 32, wherein said compound semiconductor oxide comprises gallium, indium, tin, zirconium, hafnium, vanadium or their combination.
34, panel display apparatus as claimed in claim 28, wherein said inorganic oxide comprises silicon or aluminium.
35, a kind of thin-film transistor comprises:
Substrate;
Be formed on the grid on the described substrate;
Be formed on the gate insulating film on described grid and the described substrate;
Be formed on active layer adjacent with described grid on the described gate insulating film, described active layer comprises ZnO, ZnGaO, ZnInO, ZnSnO or GaInZnO.
36, thin-film transistor as claimed in claim 35, the band gap of wherein said passivation layer is not more than the band gap of described active layer.
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| KR10-2008-0066002 | 2008-07-08 | ||
| KR1020080066002 | 2008-07-08 | ||
| KR1020080066002A KR100963104B1 (en) | 2008-07-08 | 2008-07-08 | Thin film transistor, method of manufacturing the thin film transistor and flat panel display device having the thin film transistor |
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|---|---|
| CN101626036A true CN101626036A (en) | 2010-01-13 |
| CN101626036B CN101626036B (en) | 2015-11-25 |
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| US (3) | US8178884B2 (en) |
| EP (1) | EP2144294B1 (en) |
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Also Published As
| Publication number | Publication date |
|---|---|
| US20100006833A1 (en) | 2010-01-14 |
| US20120033152A1 (en) | 2012-02-09 |
| JP5542352B2 (en) | 2014-07-09 |
| US20120220077A1 (en) | 2012-08-30 |
| JP2010021520A (en) | 2010-01-28 |
| US8193535B2 (en) | 2012-06-05 |
| EP2144294B1 (en) | 2018-11-21 |
| EP2144294A1 (en) | 2010-01-13 |
| US8178884B2 (en) | 2012-05-15 |
| KR100963104B1 (en) | 2010-06-14 |
| CN101626036B (en) | 2015-11-25 |
| US8728862B2 (en) | 2014-05-20 |
| KR20100005900A (en) | 2010-01-18 |
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