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CN101496167A - 用于过电压保护的包括电压可变换材料的半导体器件 - Google Patents

用于过电压保护的包括电压可变换材料的半导体器件 Download PDF

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Publication number
CN101496167A
CN101496167A CNA2006800515745A CN200680051574A CN101496167A CN 101496167 A CN101496167 A CN 101496167A CN A2006800515745 A CNA2006800515745 A CN A2006800515745A CN 200680051574 A CN200680051574 A CN 200680051574A CN 101496167 A CN101496167 A CN 101496167A
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CN
China
Prior art keywords
semiconductor device
voltage switchable
pipe core
core welding
semiconductor element
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CNA2006800515745A
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English (en)
Inventor
L·科索沃斯基
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Shocking Technologies Inc
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Shocking Technologies Inc
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Publication of CN101496167A publication Critical patent/CN101496167A/zh
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Abstract

提供将电压可变换材料用于过电压保护的半导体器件。在各个实现中，电压可变换材料代替常规管芯附连粘合剂、未充满层、以及封装物。虽然电压可变换材料通常起电介质材料的作用，但在过电压事件期间，电压可变换材料变成导电、并可将电传导到接地。因此，电压可变换材料与到诸如衬底上的接地迹线、或在倒装封装中的接地焊球的接地的通路接触。

Description

用于过电压保护的包括电压可变换材料的半导体器件
相关申请的交叉引用
本申请要求对通过引用纳入于此的2005年11月22日提交的题为“Over-Voltage Protection for Semiconductor Devices Using Voltage SwitchableDielectric Material as an Encapsulant or Underfill”(对使用电压可变换电介质材料作为封装物或未充满层的半导体器件的过电压保护)的美国临时专利申请No.60/739,724的优先权。
发明背景
发明领域
本发明一般涉及电子器件领域，尤其涉及过电压保护。
现有技术描述
包括半导体管芯或芯片的半导体器件容易受过电压事件影响或破坏。过电压事件的示例包括静电放电(ESD)、线路瞬变、以及雷击。当带静电的人触摸半导体器件时，通常会发生静电放电。线路瞬变包括AC电源线上的电源浪涌，并且也可由诸如闭合开关或开启马达的事件引起。
也称为非线性电阻材料的电压可变换材料是通常起电介质材料作用的材料，但在施加称为开关电压的充足电压之后将快速变成导电的。电压可变换材料在非导电状态和导电状态之间切换的能力使这些材料非常适于过电压保护应用。
在现有技术中，电压可变换材料已经以多种不同方式用于过电压保护。例如，在Behling等人的专利(US 6,570,765)中，微隙在各接触部分之间限定并且接地棒用电压可变换材料填充。Intrater(US 6,433,394)示教具有多个其间有精确间隙、置于接地层外围的周围的导电焊盘的集成电路芯片、以及包括置于集成电路芯片上的电压可变换材料的保护器件。Shrier等人的专利(US6,542,065)示教包括嵌有电压可变换材料的加强层的可变电压保护组件。因此，在现有技术中，通过电压可变换材料的使用实现过电压保护需要重新设计半导体器件以包括例如附加的特征，例如Behling等人专利中的微隙、Intrater专利中的保护器件、以及Shrier等人专利中的加强层。
概要
本发明的一示例性半导体器件包括电介质衬底和半导体管芯。电介质衬底在其一个表面上包括管芯焊盘和多个导电迹线。半导体管芯用包括第一电压可变换材料的管芯附连粘合剂与管芯焊盘附连。管芯附连粘合剂还接触多个导电迹线中的一个导电迹线。在一些实例中，为了接触导电迹线，管芯附连粘合剂延伸到管芯焊盘之外。在其它实例中，导电迹线在半导体管芯和管芯焊盘之间延伸。在其它实施方式中，半导体器件包括封装物，该封装物包括可与第一电压可变换材料相同的第二电压可变换材料。
本发明的另一示例性半导体器件包括电介质衬底、半导体管芯、以及未充满层(underfill layer)。电介质衬底在其一个表面上包括包含接地用接合焊盘的管芯焊盘。半导体管芯通过多个焊球与管芯焊盘倒装接合。未充满层包括第一电压可变换材料且被置于管芯焊盘与半导体管芯之间。未充满层还与多个焊球中的一个焊球接触，该焊球与接地用接合焊盘连接。在其它实施方式中，半导体器件包括封装物，该封装物包括可与第一电压可变换材料相同的第二电压可变换材料。
本发明的又一示例性半导体器件包括电介质衬底、半导体管芯、以及封装物。电介质衬底在其一个表面上包括管芯焊盘和多个导电迹线，且半导体管芯与管芯焊盘附连。封装物包括封装半导体管芯的第一电压可变换材料。在一些实施方式中，半导体管芯用管芯附连粘合剂附连到管芯焊盘，且在一部分这些实施方式中，管芯附连粘合剂包括第二电压可变换材料。如以上所述，第一和第二电压可变换材料可以是相同的。
在其它实施方式中，半导体管芯被倒装接合到管芯焊盘，且半导体器件进一步包括置于管芯焊盘和半导体管芯之间的未充满层。在一些实例中，未充满层可包括第二电压可变换材料。在其它实施方式中，半导体器件包括置于衬底表面上并与封装物接触的接地迹线。
本发明的再一示例性半导体器件包括电介质衬底，该电介质衬底在其一个表面上包括包含接地用接合焊盘的管芯焊盘。该半导体器件还包括通过多个焊球倒装接合到管芯焊盘的半导体管芯。该半导体器件进一步包括由第一电压可变换材料形成，置于半导体管芯和衬底之间，并与接地用接合焊盘接触的球。
本发明的另一示例性半导体器件包括电介质衬底、半导体管芯、以及封装物。电介质衬底在其一个表面上包括管芯焊盘，并且半导体管芯与管芯焊盘附连。封装物包括第一共形层和覆盖在第一共形层上的第二层。包括第一电压可变换材料的第一共形层适应半导体管芯以及至少部分的电介质衬底。
本发明的又一示例性半导体器件包括晶片级封装。该晶片级封装包括半导体管芯，该半导体管芯在其一个表面上包括其中至少一个是接地用接合焊盘的多个接合焊盘。晶片级封装进一步包括置于接合焊盘上的焊球，以及包括包住半导体管芯的电压可变换材料的封装物，其中焊球伸出封装物。封装物接触置于接地用接合焊盘上的焊球。
附图简述
图1是根据本发明一示例性实施方式的半导体器件的横截面视图。
图2是根据本发明另一示例性实施方式的半导体器件的横截面视图。
图3是根据本发明又一示例性实施方式的半导体器件的横截面视图。
图4是根据本发明再一示例性实施方式的半导体器件的横截面视图。
图5是根据本发明另一示例性实施方式的半导体器件的横截面视图。
图6是根据本发明又一示例性实施方式的半导体器件的横截面视图。
图7是根据本发明再一示例性实施方式的半导体器件的横截面视图。
图8是根据本发明另一示例性实施方式的半导体器件的横截面视图。
图9是根据本发明再一示例性实施方式的半导体器件的横截面视图。
发明详细描述
本发明对诸如经封装的半导体管芯的半导体器件提供过电压保护。经封装的半导体管芯可例如在芯片级封装(CSP)中按照常规地进行引线接合或倒装接合。可采用本发明的其它半导体器件包括晶片级封装。在本发明中过电压保护通过用电压可变换材料代替半导体器件的其它材料来实现。在本文的各个实现方式中，电压可变换材料代替电介质材料并与电气接地接触。因而，电压可变换材料通常起电介质材料的作用，但在过电压事件期间电压可变换材料能够将电传导到电气接地。
图1示出诸如集成电路的本发明一示例性半导体器件100的横截面视图。该半导体器件100包括与衬底120附连的半导体管芯或芯片110。在此实施方式中，半导体管芯110用包括电压可变换材料的管芯附连粘合剂130附连到衬底120的管芯焊盘(未示出)。可以理解，衬底120的管芯焊盘仅仅是衬底的一个已被指示成半导体管芯110位置的区域。因此管芯焊盘不需要被限定范围，虽然在一些实施方式中管芯焊盘被清楚地限定。
半导体管芯110在其上表面上包括通过布线150与衬底120上的导电迹线140电连接的接合焊盘(未示出)。为了例示目的，在附图中迹线140的厚度被大大地放大了。迹线140例如可通过穿过衬底120的通孔(未示出)与焊球160连接。焊球160可依次与通向电源、接地源和信号源的印刷电路板(未示出)上的布线连接。这样，半导体管芯110与电源和地面连接且能够发送和接收信号。应该注意，术语“焊球”在此被宽泛地使用以也包括焊料隆起焊盘。
在图1示出的实施方式中，半导体管芯110上的一个接合焊盘通过接地迹线170与地面连接。接地迹线170在半导体管芯110和管芯焊盘之间延伸使得接地迹线170与管芯附连粘合剂130接触。换句话说，接地迹线170延伸到管芯焊盘内。在管芯附连工艺期间，管芯附连粘合剂130被涂敷到管芯焊盘上和接地迹线170的延伸到管芯焊盘内的那部分上。将认识到典型的半导体管芯110将包括多个接地用接合焊盘，并且这些接合焊盘中的任何一个或全部都可与接地迹线170连接。
适用于管芯附连粘合剂130的电压可变换材料包括与微粒导体混合的基体材料。为了管芯附连粘合剂130，基体材料可与常规管芯附连粘合剂类似且可包括环氧树脂、聚酰亚胺、硅酮、及其组合。因此，管芯附连粘合剂130可通过常规技术涂敷。适当的电压可变换材料例如由Wakabayashi等人专利(US3,685,026)和Shrier专利(US 4,977,357)示教。
其它适当的电压可变换材料包括约占体积的30％到80％的电介质材料、约占体积的0.1％到70％的电导体、以及约占体积的0％到70％的半导体材料。电介质材料的示例包括但不限于：有机硅聚合物、环氧树脂、聚酰亚胺、聚乙烯、聚丙烯、聚苯醚、聚砜、溶胶凝胶材料、陶瓷、二氧化硅、氧化铝、氧化锆、以及其它金属氧化物绝缘体。导电材料的示例包括但不限于诸如铜、铝、镍、以及不锈钢的金属。半导体材料的示例包括有机和无机半导体。适当的无机半导体包括硅、碳化硅、氮化硼、氮化铝、氧化镍、氧化锌、以及硫化锌。适当的有机半导体包括聚3己基噻吩、并五苯、苝、碳纳米管、以及C60富勒烯。
图2示出本发明的另一示例性半导体器件200的横截面视图。在此实施方式中，管芯附连粘合剂210至少部分地覆盖接地迹线220。在这里，为了与接地迹线220接触，管芯附连粘合剂210延伸到管芯焊盘之外。在一些实施方式中，接地迹线220向管芯焊盘延伸来最小化到达接地迹线220所需的额外管芯附连粘合剂210的量。与之前的实施方式类似，在管芯附连工艺期间，管芯附连粘合剂210被涂敷在管芯焊盘和接地迹线220的至少一部分上。在本实施方式和先前描述的实施方式中，管芯附连粘合剂210、130通常起电介质材料的作用，但在过电压事件期间将把电传导到接地迹线220、170，然后传导到地面。在本实施方式和先前描述的实施方式中，管芯附连粘合剂210、130可用与用于分散常规管芯附连粘合剂的设备相同的设备来分散。
图3示出本发明的又一示例性半导体器件300的横截面视图。在此实施方式中，半导体管芯310被倒装接合到衬底320。在倒装接合时，半导体管芯310被反转(相对于先前两个实施方式中的方向)，以使得半导体管芯310上的接合焊盘可在管芯焊盘内与衬底320上相匹配的一组接合焊盘直接连接。倒装接合时相对的接合焊盘对之间的连接由焊球330制成。
虽然焊球330提供了半导体管芯310和衬底320之间的机械连接，但设置包括电压可变换材料的未充满层340来增加倒装接合的弹性。与先前的两个实施方式中一样，本实施方式中的半导体管芯310具有一个或多个接地用接合焊盘，每个接合焊盘通过焊球330与衬底320上的接合焊盘(未示出)连接。这些到接地的焊球330连接各自在未充满层340内可在过压事件期间起接地端子的作用。有利地，用于形成未充满层340的电压可变换材料可通过与用于注入常规未充满材料的设备相同的设备在半导体管芯310和衬底320之间注入。
图4和图5示出本发明的另外两个示例性半导体器件400和500的横截面视图。图4的半导体器件400包括用在一些实施方式中包括电压可变换材料的管芯附连粘合剂430与衬底420附连的半导体管芯410。半导体器件400还包括封装物440，该封装物440包括电压可变换材料并封装半导体管芯410。
图5的半导体器件500包括倒装接合到衬底520的半导体管芯510以及在一些实施方式中包括电压可变换材料的未充满层530。半导体器件500还包括封装物540，该封装物540包括电压可变换材料并封装半导体管芯510。在图4和图5示出的实施方式中，封装物440、540通常是电介质但在过压事件期间起导电到近接地位置的作用。封装物440、540可通过诸如模制和丝网印刷的常规方法进行涂敷。
在图4的实施方式中，与封装物440接触的任何接地迹线450可在过压事件期间起接地的作用。同样在这个实施方式中，如果管芯附连粘合剂430包括电压可变换材料，则封装物440的电压可变换材料可以与管芯附连粘合剂的电压可变换材料相同或不同。
在图5的实施方式中，还提供接地迹线550。在一些实施方式中，接地迹线550与接地焊球560电连通。在那些其中未充满层530也包括电压可变换材料的实施方式中，接地迹线550是可任选的，因为接地焊球560可在过压事件期间起接地的作用。同样在图5的实施方式中，如果未充满层530包括电压可变换材料，则封装物540的电压可变换材料可以与未充满层530的电压可变换材料相同或不同。
图6示出本发明的另一示例性半导体器件600的横截面视图。在这个实施方式中，支承半导体管芯620的衬底610被安装在印刷电路板630上。焊球640提供衬底610和印刷电路板630之间的电连接。如上所述，这些连接中的一部分提供电接地。半导体器件600还包括未充满层650，该未充满层650包括电压可变换材料。未充满层650与以上关于图3讨论的未充满层340类似地提供过电压保护。虽然图6示出的实施方式包括与衬底610引线接合的半导体管芯620，但可以理解半导体管芯620还可被倒装接合到衬底610上。此外，在一些实施方式中，封装物660和/或管芯附连粘合剂670还可包括电压可变换材料。对于倒装接合，管芯附连粘合剂670由也可包括电压可变换材料的另一未充满层代替。
在又一示例性半导体器件700中，如图7的横截面所示，半导体管芯710被倒装接合到衬底720上。在此实施方式中，焊球730的一部分由包括电压可变换材料的球740代替。在此实施方式中，球740被置于半导体管芯710上的接合焊盘和衬底720之间用于接地。与焊球730类似，球740可在倒装接合之前通过诸如丝网印刷的常规工艺在半导体管芯710上形成。此外，在一些实施方式中，封装物750和/或未充满层760还可包括电压可变换材料。
在再一示例性半导体器件800中，如图8的横截面所示，半导体管芯810通过管芯附连粘合剂830与衬底820附连。在此实施方式中，封装物840包括两层，即包括电压可变换材料的共形层850和置于共形层850上的常规封装物的第二层860。使用薄的共形层850代替图4和图5的较厚的封装物440和540提供相同的过电压保护，但每个半导体器件800使用较少的电压可变换材料。
共形层850被置于衬底820的半导体管芯810和接地迹线870上。这样，共形层850与接地源接触。在一些实施方式中，共形层850的厚度在约为50密尔的数量级上。共形层850可例如通过喷墨印刷、丝网印刷、或喷涂形成。常规封装物的第二层860可例如通过诸如模制和丝网印刷的常规方法形成。可以理解，半导体管芯810还可倒装接合到衬底820上。如上所述，管芯附连粘合剂830或在倒装接合情况下的未充满层还可包括电压可变换材料。
图9示出本发明的另一示例性半导体器件900的横截面视图。半导体器件900包括晶片级封装。半导体器件900包括具有置于焊盘(未示出)上的焊球920的半导体管芯910和形成为包住半导体管芯910的封装物930。只有焊球920凸出封装物930之外。封装物930包括电压可变换材料并与置于接地用接合焊盘上的至少一个焊球920接触。
在前面的说明书中，已参考本发明具体实施方式对本发明进行了描述，但本领域技术人员将认识到本发明不限于此。上述发明的各种特征和方面可单独地或共同地使用。更进一步地，本发明可在不背离本说明书更宽泛的精神和范围的情况下用在任何数目的超出在本文中所描述的环境和应用中。因此，说明书和附图被认为是示例性的而非限制性的。将认识到，在此使用的术语“包括”、“包含”、以及“具有”具体旨在作为技术领域开放性术语来理解。

Claims (20)

1.一种半导体器件，包括：
在其一个表面上包括管芯焊盘和多个导电迹线的电介质衬底；以及
用包括第一电压可变换材料的管芯附连粘合剂与所述管芯焊盘附连的半导体管芯，所述管芯附连粘合剂接触所述多个导电迹线中的一个导电迹线。
2.如权利要求1所述的半导体器件，其特征在于，所述管芯附连粘合剂至少部分地覆盖所述导电迹线。
3.如权利要求1所述的半导体器件，其特征在于，所述导电迹线在所述半导体管芯和所述管芯焊盘之间延伸。
4.如权利要求1所述的半导体器件，其特征在于，所述管芯附连粘合剂延伸到所述管芯焊盘之外以与所述导电迹线接触。
5.如权利要求1所述的半导体器件，进一步包括封装物，其包括第二电压可变换材料。
6.如权利要求5所述的半导体器件，其特征在于，所述第一和第二电压可变换材料相同。
7.一种半导体器件，包括：
在其一个表面上包括管芯焊盘和多个导电迹线的电介质衬底；
与所述管芯焊盘附连的半导体管芯；以及
包括覆盖在所述半导体管芯和至少一部分所述电介质衬底上的第一电压可变换材料的封装物。
8.如权利要求7所述的半导体器件，其特征在于，所述半导体管芯用管芯附连粘合剂与所述管芯焊盘附连。
9.如权利要求8所述的半导体器件，其特征在于，所述管芯附连粘合剂包括第二电压可变换材料。
10.如权利要求9所述的半导体器件，其特征在于，所述第一和第二电压可变换材料相同。
11.如权利要求7所述的半导体器件，其特征在于，所述半导体管芯被倒装接合到所述管芯焊盘，且所述半导体器件进一步包括置于管芯焊盘和半导体管芯之间的未充满层。
12.如权利要求11所述的半导体器件，进一步包括置于所述衬底的一个表面上并与所述封装物接触的接地迹线。
13.如权利要求11所述的半导体器件，其特征在于，所述未充满层包括第二电压可变换材料。
14.如权利要求13所述的半导体器件，其特征在于，所述第一和第二电压可变换材料相同。
15.一种半导体器件，包括：
在其一个表面上包括管芯焊盘的电介质衬底，所述管芯焊盘包括接地用接合焊盘；
通过多个焊球倒装接合到所述管芯焊盘的半导体管芯；以及
由第一电压可变换材料形成、置于所述半导体管芯和所述衬底之间、并与所述接地用接合焊盘接触的球。
16.如权利要求15所述的半导体器件，进一步包括封装物，其包括第二电压可变换材料。
17.一种半导体器件，包括：
在其一个表面上包括管芯焊盘的电介质衬底；
与所述管芯焊盘附连的半导体管芯；以及
封装物，包括
由适应所述半导体管芯和至少一部分所述电介质衬底的第一电压可变换材料组成的第一共形层，以及
覆盖在所述第一共形层上的第二层。
18.如权利要求17所述的半导体器件，其特征在于，所述半导体管芯用包括第二电压可变换材料的管芯附连粘合剂与所述管芯焊盘附连。
19.如权利要求17所述的半导体器件，其特征在于，所述半导体器件被倒装接合到所述管芯焊盘，且所述半导体器件进一步包括未充满层，所述未充满层包括置于所述管芯焊盘和所述半导体管芯之间的第二电压可变换材料。
20.一种晶片级封装，包括：
在其表面上包括多个接合焊盘的半导体管芯，所述接合焊盘中的至少一个是接地用接合焊盘；
置于所述接合焊盘上的焊球；以及
包括包住所述半导体管芯、并与置于所述接地用接合焊盘之上的焊球接触的电压可变换材料的封装物，所述焊球凸出所述封装物之外。
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CN102005418A (zh) * 2009-08-31 2011-04-06 株式会社日立制作所 半导体装置及其制造方法
CN102005418B (zh) * 2009-08-31 2013-09-11 株式会社日立制作所 半导体装置及其制造方法
CN102169871A (zh) * 2010-02-26 2011-08-31 联能科技（深圳）有限公司 抗静电的电路结构及制造方法
CN102169871B (zh) * 2010-02-26 2013-03-27 联能科技（深圳）有限公司 抗静电的电路结构及制造方法

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EP1969627A2 (en) 2008-09-17
US8310064B2 (en) 2012-11-13
US7923844B2 (en) 2011-04-12
KR20080084812A (ko) 2008-09-19
EP1969627A4 (en) 2010-01-20

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