CN100490180C - 纵向场效应晶体管及其制造方法 - Google Patents
纵向场效应晶体管及其制造方法 Download PDFInfo
- Publication number
- CN100490180C CN100490180C CNB2005800017622A CN200580001762A CN100490180C CN 100490180 C CN100490180 C CN 100490180C CN B2005800017622 A CNB2005800017622 A CN B2005800017622A CN 200580001762 A CN200580001762 A CN 200580001762A CN 100490180 C CN100490180 C CN 100490180C
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- upper electrode
- active region
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- lower electrode
- electric conductor
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- Expired - Fee Related
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Images
Classifications
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- H01L29/78696—
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H01L29/0665—
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- H01L29/0673—
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- H01L29/0676—
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- H01L29/1606—
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- H01L29/42384—
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- H01L29/7781—
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- H01L29/78642—
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/902—Specified use of nanostructure
- Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
- Y10S977/936—Specified use of nanostructure for electronic or optoelectronic application in a transistor or 3-terminal device
- Y10S977/938—Field effect transistors, FETS, with nanowire- or nanotube-channel region
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
Claims (23)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP291170/2004 | 2004-10-04 | ||
JP2004291170 | 2004-10-04 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1906771A CN1906771A (zh) | 2007-01-31 |
CN100490180C true CN100490180C (zh) | 2009-05-20 |
Family
ID=34956325
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2005800017622A Expired - Fee Related CN100490180C (zh) | 2004-10-04 | 2005-09-28 | 纵向场效应晶体管及其制造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7586130B2 (zh) |
JP (1) | JP4568286B2 (zh) |
CN (1) | CN100490180C (zh) |
WO (1) | WO2006038504A1 (zh) |
Families Citing this family (72)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100574317B1 (ko) * | 2004-02-19 | 2006-04-26 | 삼성전자주식회사 | 게이트 구조물, 이를 갖는 반도체 장치 및 그 형성 방법 |
JP2007535413A (ja) * | 2004-04-30 | 2007-12-06 | ナノシス・インコーポレイテッド | ナノワイヤ成長および採取のための系および方法 |
US7230286B2 (en) | 2005-05-23 | 2007-06-12 | International Business Machines Corporation | Vertical FET with nanowire channels and a silicided bottom contact |
US20060281321A1 (en) * | 2005-06-13 | 2006-12-14 | Conley John F Jr | Nanowire sensor device structures |
US7446372B2 (en) * | 2005-09-01 | 2008-11-04 | Micron Technology, Inc. | DRAM tunneling access transistor |
TWI300251B (en) * | 2006-07-14 | 2008-08-21 | Ind Tech Res Inst | Manufacturing method of vertical thin film transistor |
EP2074660A1 (en) * | 2006-09-04 | 2009-07-01 | Nxp B.V. | Control of carbon nanostructure growth in an interconnect structure |
US7573420B2 (en) * | 2007-05-14 | 2009-08-11 | Infineon Technologies Ag | RF front-end for a radar system |
US20100096621A1 (en) * | 2007-03-23 | 2010-04-22 | Takashi Chuman | Organic transistor and manufacture method thereof |
WO2009023304A2 (en) * | 2007-05-02 | 2009-02-19 | Atomate Corporation | High density nanotube devices |
EP2019313B1 (en) * | 2007-07-25 | 2015-09-16 | Stichting IMEC Nederland | Sensor device comprising elongated nanostructures, its use and manufacturing method |
KR100900148B1 (ko) * | 2007-10-31 | 2009-06-01 | 주식회사 하이닉스반도체 | 반도체 소자 및 그 제조 방법 |
US8395901B2 (en) * | 2007-11-13 | 2013-03-12 | William Marsh Rice University | Vertically-stacked electronic devices having conductive carbon films |
FR2924108B1 (fr) * | 2007-11-28 | 2010-02-12 | Commissariat Energie Atomique | Procede d'elaboration, sur un materiau dielectrique, de nanofils en materiaux semi-conducteur connectant deux electrodes |
WO2009087623A1 (en) * | 2008-01-07 | 2009-07-16 | Ramot At Tel Aviv University Ltd. | Electric nanodevice and method of manufacturing same |
TWI368315B (en) * | 2008-08-27 | 2012-07-11 | Nanya Technology Corp | Transistor structure, dynamic random access memory containing the transistor structure, and method of making the same |
US8384007B2 (en) * | 2009-10-07 | 2013-02-26 | Zena Technologies, Inc. | Nano wire based passive pixel image sensor |
KR101579135B1 (ko) * | 2008-12-03 | 2015-12-22 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판 및 그 제조 방법 |
KR101539669B1 (ko) * | 2008-12-16 | 2015-07-27 | 삼성전자주식회사 | 코어-쉘 타입 구조물 형성방법 및 이를 이용한 트랜지스터 제조방법 |
FR2949278B1 (fr) * | 2009-08-18 | 2012-11-02 | Commissariat Energie Atomique | Procede de fabrication d'un dispositif d'emission de lumiere a base de diodes electroluminescentes |
TWI406419B (zh) * | 2009-11-06 | 2013-08-21 | Chunghwa Picture Tubes Ltd | 垂直式薄膜電晶體及其製造方法以及包括該垂直式薄膜電晶體之顯示裝置及其製造方法 |
US8269209B2 (en) * | 2009-12-18 | 2012-09-18 | Intel Corporation | Isolation for nanowire devices |
US9305766B2 (en) | 2009-12-22 | 2016-04-05 | Qunano Ab | Method for manufacturing a nanowire structure |
US7923313B1 (en) | 2010-02-26 | 2011-04-12 | Eastman Kodak Company | Method of making transistor including reentrant profile |
US8803203B2 (en) * | 2010-02-26 | 2014-08-12 | Eastman Kodak Company | Transistor including reentrant profile |
CA2800142C (en) | 2010-05-24 | 2018-06-05 | Siluria Technologies, Inc. | Nanowire catalysts |
FR2962595B1 (fr) | 2010-07-06 | 2015-08-07 | Commissariat Energie Atomique | Dispositif microélectronique a niveaux métalliques d'interconnexion connectes par des vias programmables |
US8901537B2 (en) | 2010-12-21 | 2014-12-02 | Intel Corporation | Transistors with high concentration of boron doped germanium |
US9484432B2 (en) | 2010-12-21 | 2016-11-01 | Intel Corporation | Contact resistance reduction employing germanium overlayer pre-contact metalization |
US8847232B2 (en) | 2011-01-07 | 2014-09-30 | Eastman Kodak Company | Transistor including reduced channel length |
US8847226B2 (en) | 2011-01-07 | 2014-09-30 | Eastman Kodak Company | Transistor including multiple reentrant profiles |
US8338291B2 (en) | 2011-01-07 | 2012-12-25 | Eastman Kodak Company | Producing transistor including multiple reentrant profiles |
US8304347B2 (en) | 2011-01-07 | 2012-11-06 | Eastman Kodak Company | Actuating transistor including multiple reentrant profiles |
US8383469B2 (en) | 2011-01-07 | 2013-02-26 | Eastman Kodak Company | Producing transistor including reduced channel length |
US7985684B1 (en) | 2011-01-07 | 2011-07-26 | Eastman Kodak Company | Actuating transistor including reduced channel length |
US8409937B2 (en) | 2011-01-07 | 2013-04-02 | Eastman Kodak Company | Producing transistor including multi-layer reentrant profile |
US8492769B2 (en) | 2011-01-07 | 2013-07-23 | Eastman Kodak Company | Transistor including multi-layer reentrant profile |
US9431400B2 (en) * | 2011-02-08 | 2016-08-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor memory device and method for manufacturing the same |
US8669552B2 (en) | 2011-03-02 | 2014-03-11 | Applied Materials, Inc. | Offset electrode TFT structure |
US8686486B2 (en) * | 2011-03-31 | 2014-04-01 | Semiconductor Energy Laboratory Co., Ltd. | Memory device |
MY162772A (en) | 2011-05-24 | 2017-07-14 | Siluria Technologies Inc | Catalysts for oxidative coupling of methane |
CN102299260B (zh) * | 2011-06-27 | 2013-12-25 | 福州华映视讯有限公司 | 垂直式有机薄膜晶体管的制作方法 |
US8637355B2 (en) | 2011-08-26 | 2014-01-28 | Eastman Kodak Company | Actuating transistor including single layer reentrant profile |
US8617942B2 (en) | 2011-08-26 | 2013-12-31 | Eastman Kodak Company | Producing transistor including single layer reentrant profile |
US8592909B2 (en) | 2011-08-26 | 2013-11-26 | Eastman Kodak Company | Transistor including single layer reentrant profile |
US8803227B2 (en) | 2011-09-29 | 2014-08-12 | Eastman Kodak Company | Vertical transistor having reduced parasitic capacitance |
US8865576B2 (en) | 2011-09-29 | 2014-10-21 | Eastman Kodak Company | Producing vertical transistor having reduced parasitic capacitance |
JP5591784B2 (ja) * | 2011-11-25 | 2014-09-17 | 株式会社東芝 | 配線及び半導体装置 |
WO2013082318A2 (en) | 2011-11-29 | 2013-06-06 | Siluria Technologies, Inc. | Nanowire catalysts and methods for their use and preparation |
JP6308998B2 (ja) | 2012-05-24 | 2018-04-11 | シルリア テクノロジーズ, インコーポレイテッド | 触媒ナノワイヤを含む触媒およびそれらの使用 |
CN102842601B (zh) * | 2012-08-17 | 2015-05-13 | 京东方科技集团股份有限公司 | 一种阵列基板及其制作方法 |
JP6003460B2 (ja) * | 2012-09-24 | 2016-10-05 | 株式会社デンソー | 縦型トランジスタの製造方法 |
KR102050561B1 (ko) * | 2012-12-18 | 2020-01-09 | 삼성디스플레이 주식회사 | 수직형 박막트랜지스터 및 이의 제조 방법 |
CA2902192C (en) | 2013-03-15 | 2021-12-07 | Siluria Technologies, Inc. | Catalysts for petrochemical catalysis |
WO2015140806A1 (en) * | 2014-03-20 | 2015-09-24 | Skokie Swift Corporation | Vertical field effect transistor having a disc shaped gate |
CA2947483C (en) | 2014-05-02 | 2023-08-01 | Siluria Technologies, Inc. | Heterogeneous catalysts |
EP3194070B1 (en) | 2014-09-17 | 2020-12-23 | Lummus Technology LLC | Catalysts for oxidative coupling of methane and oxidative dehydrogenation of ethane |
US9263260B1 (en) | 2014-12-16 | 2016-02-16 | International Business Machines Corporation | Nanowire field effect transistor with inner and outer gates |
US9679965B1 (en) | 2015-12-07 | 2017-06-13 | Samsung Electronics Co., Ltd. | Semiconductor device having a gate all around structure and a method for fabricating the same |
US9799655B1 (en) | 2016-04-25 | 2017-10-24 | International Business Machines Corporation | Flipped vertical field-effect-transistor |
US9755073B1 (en) | 2016-05-11 | 2017-09-05 | International Business Machines Corporation | Fabrication of vertical field effect transistor structure with strained channels |
US9917196B1 (en) | 2016-10-14 | 2018-03-13 | International Business Machines Corporation | Semiconductor device and method of forming the semiconductor device |
US10396208B2 (en) | 2017-01-13 | 2019-08-27 | International Business Machines Corporation | Vertical transistors with improved top source/drain junctions |
US10332840B2 (en) | 2017-03-21 | 2019-06-25 | Macronix International Co., Ltd. | Semiconductor device with physically unclonable function (PUF) and apparatus including the same |
US10020381B1 (en) * | 2017-05-17 | 2018-07-10 | International Business Machines Corporation | Embedded bottom metal contact formed by a self-aligned contact process for vertical transistors |
CN107195687B (zh) * | 2017-06-07 | 2019-07-09 | 京东方科技集团股份有限公司 | 一种tft及其制作方法、阵列基板、显示面板及显示装置 |
US10121877B1 (en) | 2017-09-13 | 2018-11-06 | International Business Machines Corporation | Vertical field effect transistor with metallic bottom region |
KR102337408B1 (ko) | 2017-09-13 | 2021-12-10 | 삼성전자주식회사 | 수직 채널을 가지는 반도체 소자 및 그 제조 방법 |
DE112017007816T5 (de) | 2017-09-15 | 2020-04-30 | Intel Corporation | Dünnfilm-tunnelfeldeffekttransistoren mit relativ erhöhter breite |
KR102465533B1 (ko) * | 2017-11-21 | 2022-11-11 | 삼성전자주식회사 | 수직 채널을 가지는 반도체 소자 |
US10396151B1 (en) | 2018-06-14 | 2019-08-27 | International Business Machines Corporation | Vertical field effect transistor with reduced gate to source/drain capacitance |
WO2024033742A1 (ja) * | 2022-08-10 | 2024-02-15 | 株式会社半導体エネルギー研究所 | シフトレジスタ |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3583575D1 (de) * | 1984-10-17 | 1991-08-29 | Hitachi Ltd | Komplementaere halbleiteranordnung. |
US5106778A (en) * | 1988-02-02 | 1992-04-21 | Massachusetts Institute Of Technology | Vertical transistor device fabricated with semiconductor regrowth |
US5362972A (en) | 1990-04-20 | 1994-11-08 | Hitachi, Ltd. | Semiconductor device using whiskers |
KR100480773B1 (ko) * | 2000-01-07 | 2005-04-06 | 삼성에스디아이 주식회사 | 카본 나노 튜브를 이용한 3극 전계방출소자의 제작방법 |
EP1129990A1 (en) | 2000-02-25 | 2001-09-05 | Lucent Technologies Inc. | Process for controlled growth of carbon nanotubes |
US6509586B2 (en) | 2000-03-31 | 2003-01-21 | Fujitsu Limited | Semiconductor device, method for fabricating the semiconductor device and semiconductor integrated circuit |
DE10036897C1 (de) | 2000-07-28 | 2002-01-03 | Infineon Technologies Ag | Feldeffekttransistor, Schaltungsanordnung und Verfahren zum Herstellen eines Feldeffekttransistors |
US7301199B2 (en) | 2000-08-22 | 2007-11-27 | President And Fellows Of Harvard College | Nanoscale wires and related devices |
EP1314189B1 (en) | 2000-08-22 | 2013-02-27 | President and Fellows of Harvard College | Electrical device comprising doped semiconductor nanowires and method for its production |
JP4225716B2 (ja) * | 2001-09-11 | 2009-02-18 | 富士通株式会社 | 円筒状多層構造体による半導体装置 |
US7084507B2 (en) | 2001-05-02 | 2006-08-01 | Fujitsu Limited | Integrated circuit device and method of producing the same |
JP4234348B2 (ja) | 2001-09-06 | 2009-03-04 | 日本電信電話株式会社 | パターン間配線形成法 |
GB2384008B (en) | 2001-12-12 | 2005-07-20 | Electrovac | Method of synthesising carbon nano tubes |
CN1615537A (zh) | 2001-12-12 | 2005-05-11 | 宾夕法尼亚州立大学 | 化学反应器模板:牺牲层的制备和模板的应用 |
DE10250868B8 (de) * | 2002-10-31 | 2008-06-26 | Qimonda Ag | Vertikal integrierter Feldeffekttransistor, Feldeffekttransistor-Anordnung und Verfahren zum Herstellen eines vertikal integrierten Feldeffekttransistors |
JP4071601B2 (ja) * | 2002-11-11 | 2008-04-02 | 富士通株式会社 | 半導体装置 |
JP4762522B2 (ja) * | 2003-10-28 | 2011-08-31 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US7405129B2 (en) * | 2004-11-18 | 2008-07-29 | International Business Machines Corporation | Device comprising doped nano-component and method of forming the device |
US7230286B2 (en) * | 2005-05-23 | 2007-06-12 | International Business Machines Corporation | Vertical FET with nanowire channels and a silicided bottom contact |
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- 2005-09-28 JP JP2006539239A patent/JP4568286B2/ja not_active Expired - Fee Related
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US7586130B2 (en) | 2009-09-08 |
US20060125025A1 (en) | 2006-06-15 |
JPWO2006038504A1 (ja) | 2008-05-15 |
CN1906771A (zh) | 2007-01-31 |
WO2006038504A1 (ja) | 2006-04-13 |
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