CN100391316C - 借助于等离子体产生远紫外线和/或软x射线辐射的装置和方法 - Google Patents
借助于等离子体产生远紫外线和/或软x射线辐射的装置和方法 Download PDFInfo
- Publication number
- CN100391316C CN100391316C CNB2004800072273A CN200480007227A CN100391316C CN 100391316 C CN100391316 C CN 100391316C CN B2004800072273 A CNB2004800072273 A CN B2004800072273A CN 200480007227 A CN200480007227 A CN 200480007227A CN 100391316 C CN100391316 C CN 100391316C
- Authority
- CN
- China
- Prior art keywords
- radiation source
- plasma
- material bundle
- bundle
- dish
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000005855 radiation Effects 0.000 title claims abstract description 77
- 238000000034 method Methods 0.000 title claims abstract description 32
- 239000000463 material Substances 0.000 claims abstract description 136
- 230000014759 maintenance of location Effects 0.000 claims description 22
- 239000007789 gas Substances 0.000 claims description 21
- 239000002245 particle Substances 0.000 claims description 16
- 238000003860 storage Methods 0.000 claims description 16
- 239000000203 mixture Substances 0.000 claims description 9
- 239000007787 solid Substances 0.000 claims description 8
- 239000007788 liquid Substances 0.000 claims description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 239000004615 ingredient Substances 0.000 claims description 2
- 230000005284 excitation Effects 0.000 claims 1
- 230000003287 optical effect Effects 0.000 abstract description 18
- 238000005457 optimization Methods 0.000 abstract description 7
- 230000000903 blocking effect Effects 0.000 abstract 1
- 238000011109 contamination Methods 0.000 abstract 1
- 238000005286 illumination Methods 0.000 abstract 1
- 210000002381 plasma Anatomy 0.000 description 31
- 230000000694 effects Effects 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000000926 separation method Methods 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 239000012634 fragment Substances 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 210000002500 microbody Anatomy 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 230000001360 synchronised effect Effects 0.000 description 3
- 229910052724 xenon Inorganic materials 0.000 description 3
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000000109 continuous material Substances 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 239000008187 granular material Substances 0.000 description 2
- 239000003595 mist Substances 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 229910052714 tellurium Inorganic materials 0.000 description 2
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 230000003044 adaptive effect Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 239000013528 metallic particle Substances 0.000 description 1
- 230000010363 phase shift Effects 0.000 description 1
- 230000000191 radiation effect Effects 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 230000011218 segmentation Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 150000003497 tellurium Chemical class 0.000 description 1
- 229910001432 tin ion Inorganic materials 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 230000001960 triggered effect Effects 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
- H05G2/001—Production of X-ray radiation generated from plasma
- H05G2/003—Production of X-ray radiation generated from plasma the plasma being generated from a material in a liquid or gas state
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
- H05G2/001—Production of X-ray radiation generated from plasma
- H05G2/003—Production of X-ray radiation generated from plasma the plasma being generated from a material in a liquid or gas state
- H05G2/005—Production of X-ray radiation generated from plasma the plasma being generated from a material in a liquid or gas state containing a metal as principal radiation generating component
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- X-Ray Techniques (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
Claims (21)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP03100681.0 | 2003-03-18 | ||
EP03100681 | 2003-03-18 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1762183A CN1762183A (zh) | 2006-04-19 |
CN100391316C true CN100391316C (zh) | 2008-05-28 |
Family
ID=33016959
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2004800072273A Expired - Lifetime CN100391316C (zh) | 2003-03-18 | 2004-03-09 | 借助于等离子体产生远紫外线和/或软x射线辐射的装置和方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US7460646B2 (zh) |
EP (1) | EP1606980B1 (zh) |
CN (1) | CN100391316C (zh) |
AT (1) | ATE476859T1 (zh) |
DE (1) | DE602004028446D1 (zh) |
TW (1) | TW200501836A (zh) |
WO (1) | WO2004084592A2 (zh) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6770895B2 (en) | 2002-11-21 | 2004-08-03 | Asml Holding N.V. | Method and apparatus for isolating light source gas from main chamber gas in a lithography tool |
US6919573B2 (en) | 2003-03-20 | 2005-07-19 | Asml Holding N.V | Method and apparatus for recycling gases used in a lithography tool |
DE102004005241B4 (de) | 2004-01-30 | 2006-03-02 | Xtreme Technologies Gmbh | Verfahren und Einrichtung zur plasmabasierten Erzeugung weicher Röntgenstrahlung |
DE102004037521B4 (de) | 2004-07-30 | 2011-02-10 | Xtreme Technologies Gmbh | Vorrichtung zur Bereitstellung von Targetmaterial für die Erzeugung kurzwelliger elektromagnetischer Strahlung |
DE102005007884A1 (de) | 2005-02-15 | 2006-08-24 | Xtreme Technologies Gmbh | Vorrichtung und Verfahren zur Erzeugung von extrem ultravioletter (EUV-) Strahlung |
JP5156192B2 (ja) * | 2006-01-24 | 2013-03-06 | ギガフォトン株式会社 | 極端紫外光源装置 |
US8525138B2 (en) | 2006-03-31 | 2013-09-03 | Energetiq Technology, Inc. | Laser-driven light source |
DE102006017904B4 (de) | 2006-04-13 | 2008-07-03 | Xtreme Technologies Gmbh | Anordnung zur Erzeugung von extrem ultravioletter Strahlung aus einem energiestrahlerzeugten Plasma mit hoher Konversionseffizienz und minimaler Kontamination |
JP5386799B2 (ja) * | 2007-07-06 | 2014-01-15 | 株式会社ニコン | Euv光源、euv露光装置、euv光放射方法、euv露光方法および電子デバイスの製造方法 |
WO2009066242A2 (en) * | 2007-11-22 | 2009-05-28 | Philips Intellectual Property & Standards Gmbh | Method of increasing the operation lifetime of a collector optics arranged in an irradiation device and corresponding irradiation device |
KR101652364B1 (ko) * | 2008-09-11 | 2016-09-09 | 에이에스엠엘 네델란즈 비.브이. | 방사선 소스 및 리소그래피 장치 |
WO2011013779A1 (ja) * | 2009-07-29 | 2011-02-03 | 株式会社小松製作所 | 極端紫外光源装置、極端紫外光源装置の制御方法、およびそのプログラムを記録した記録媒体 |
JP6010438B2 (ja) * | 2012-11-27 | 2016-10-19 | 浜松ホトニクス株式会社 | 量子ビーム生成装置、量子ビーム生成方法、及び、レーザ核融合装置 |
US9301381B1 (en) * | 2014-09-12 | 2016-03-29 | International Business Machines Corporation | Dual pulse driven extreme ultraviolet (EUV) radiation source utilizing a droplet comprising a metal core with dual concentric shells of buffer gas |
US11587781B2 (en) | 2021-05-24 | 2023-02-21 | Hamamatsu Photonics K.K. | Laser-driven light source with electrodeless ignition |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4723262A (en) * | 1984-12-26 | 1988-02-02 | Kabushiki Kaisha Toshiba | Apparatus for producing soft X-rays using a high energy laser beam |
US5991360A (en) * | 1997-02-07 | 1999-11-23 | Hitachi, Ltd. | Laser plasma x-ray source, semiconductor lithography apparatus using the same and a method thereof |
US6075838A (en) * | 1998-03-18 | 2000-06-13 | Plex Llc | Z-pinch soft x-ray source using diluent gas |
CN1300179A (zh) * | 1999-12-16 | 2001-06-20 | 中国科学院长春光学精密机械研究所 | 喷气靶激光等离子体软x射线源 |
WO2002085080A1 (fr) * | 2001-04-18 | 2002-10-24 | Commissariat A L'energie Atomique | Procede et dispositif de generation de lumiere dans l'extreme ultraviolet notamment pour la lithographie |
US6507641B1 (en) * | 1999-10-08 | 2003-01-14 | Nikon Corporation | X-ray-generation devices, X-ray microlithography apparatus comprising same, and microelectronic-device fabrication methods utilizing same |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5270542A (en) * | 1992-12-31 | 1993-12-14 | Regents Of The University Of Minnesota | Apparatus and method for shaping and detecting a particle beam |
FR2799667B1 (fr) * | 1999-10-18 | 2002-03-08 | Commissariat Energie Atomique | Procede et dispositif de generation d'un brouillard dense de gouttelettes micrometriques et submicrometriques, application a la generation de lumiere dans l'extreme ultraviolet notamment pour la lithographie |
JP2003513418A (ja) | 1999-10-27 | 2003-04-08 | ジェイ エム エー アール リサーチ、インク | マイクロターゲットを用いた方法及びラジエーション生成システム |
TWI246872B (en) * | 1999-12-17 | 2006-01-01 | Asml Netherlands Bv | Radiation source for use in lithographic projection apparatus |
US6738452B2 (en) * | 2002-05-28 | 2004-05-18 | Northrop Grumman Corporation | Gasdynamically-controlled droplets as the target in a laser-plasma extreme ultraviolet light source |
-
2004
- 2004-03-09 US US10/548,966 patent/US7460646B2/en active Active
- 2004-03-09 WO PCT/IB2004/050213 patent/WO2004084592A2/en active Application Filing
- 2004-03-09 DE DE602004028446T patent/DE602004028446D1/de not_active Expired - Lifetime
- 2004-03-09 CN CNB2004800072273A patent/CN100391316C/zh not_active Expired - Lifetime
- 2004-03-09 EP EP04718711A patent/EP1606980B1/en not_active Expired - Lifetime
- 2004-03-09 AT AT04718711T patent/ATE476859T1/de not_active IP Right Cessation
- 2004-03-15 TW TW093106843A patent/TW200501836A/zh unknown
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4723262A (en) * | 1984-12-26 | 1988-02-02 | Kabushiki Kaisha Toshiba | Apparatus for producing soft X-rays using a high energy laser beam |
US5991360A (en) * | 1997-02-07 | 1999-11-23 | Hitachi, Ltd. | Laser plasma x-ray source, semiconductor lithography apparatus using the same and a method thereof |
US6075838A (en) * | 1998-03-18 | 2000-06-13 | Plex Llc | Z-pinch soft x-ray source using diluent gas |
US6507641B1 (en) * | 1999-10-08 | 2003-01-14 | Nikon Corporation | X-ray-generation devices, X-ray microlithography apparatus comprising same, and microelectronic-device fabrication methods utilizing same |
CN1300179A (zh) * | 1999-12-16 | 2001-06-20 | 中国科学院长春光学精密机械研究所 | 喷气靶激光等离子体软x射线源 |
WO2002085080A1 (fr) * | 2001-04-18 | 2002-10-24 | Commissariat A L'energie Atomique | Procede et dispositif de generation de lumiere dans l'extreme ultraviolet notamment pour la lithographie |
Also Published As
Publication number | Publication date |
---|---|
WO2004084592A3 (en) | 2005-01-13 |
CN1762183A (zh) | 2006-04-19 |
EP1606980A2 (en) | 2005-12-21 |
DE602004028446D1 (de) | 2010-09-16 |
ATE476859T1 (de) | 2010-08-15 |
US7460646B2 (en) | 2008-12-02 |
WO2004084592A2 (en) | 2004-09-30 |
TW200501836A (en) | 2005-01-01 |
US20060203965A1 (en) | 2006-09-14 |
EP1606980B1 (en) | 2010-08-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN100391316C (zh) | 借助于等离子体产生远紫外线和/或软x射线辐射的装置和方法 | |
RU2670273C2 (ru) | Устройство и способ для генерации излучения из лазерной плазмы | |
US20040170252A1 (en) | EUV, XUV, and X-Ray wavelength sources created from laser plasma produced from liquid metal solutions, and nano-size particles in solutions | |
JP2942544B2 (ja) | プラズマ・フォーカス高エネルギ・フォトン・ソース | |
JP5448775B2 (ja) | 極端紫外光源装置 | |
US8212228B2 (en) | Extreme ultra violet light source apparatus | |
CN100446167C (zh) | 带有改进脉冲功率系统的等离子聚集光源 | |
US8513630B2 (en) | Extreme ultraviolet light source apparatus | |
US7297968B2 (en) | Debris collector for EUV light generator | |
JP5108367B2 (ja) | 極端紫外光源装置 | |
JP2004533704A (ja) | 特にリソグラフィのための極短紫外の光を生成するための方法及び装置 | |
JP5312837B2 (ja) | 極端紫外光源装置 | |
KR20080011048A (ko) | 극단 자외광 광원 장치 및 극단 자외광 발생 방법 | |
JP5983594B2 (ja) | 光源装置 | |
US20080142738A1 (en) | Generator for flux specific bursts on nano-particles | |
JP2007258069A (ja) | 極端紫外光源装置 | |
JP2002008891A (ja) | 電磁波発生装置、これを用いた半導体製造装置並びに半導体デバイスの製造方法 | |
Amano et al. | Laser-plasma extreme ultraviolet source incorporating a cryogenic Xe target | |
JP2000098100A (ja) | 軟x線平行光束形成装置 | |
Endo | High-average power EUV light source for the next-generation lithography by laser-produced plasma | |
JPH06226088A (ja) | 超微粒子製造装置 | |
Endo | Laser-produced-plasma for EUV lithography | |
JPH067475B2 (ja) | 極端紫外光発生装置 | |
JPH04317722A (ja) | 同位体分離装置 | |
JPH05234857A (ja) | シンクロトロン放射光照射装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CP01 | Change in the name or title of a patent holder |
Address after: Holland Ian Deho Finn Patentee after: KONINKLIJKE PHILIPS N.V. Address before: Holland Ian Deho Finn Patentee before: Koninklijke Philips Electronics N.V. |
|
CP01 | Change in the name or title of a patent holder | ||
TR01 | Transfer of patent right |
Effective date of registration: 20190805 Address after: Tokyo, Japan Patentee after: USHIO DENKI Kabushiki Kaisha Address before: Holland Ian Deho Finn Patentee before: KONINKLIJKE PHILIPS N.V. |
|
TR01 | Transfer of patent right | ||
CX01 | Expiry of patent term |
Granted publication date: 20080528 |
|
CX01 | Expiry of patent term |