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CN100376725C - CaB4 compound crystal and preparation method thereof - Google Patents

CaB4 compound crystal and preparation method thereof Download PDF

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Publication number
CN100376725C
CN100376725C CNB200610048112XA CN200610048112A CN100376725C CN 100376725 C CN100376725 C CN 100376725C CN B200610048112X A CNB200610048112X A CN B200610048112XA CN 200610048112 A CN200610048112 A CN 200610048112A CN 100376725 C CN100376725 C CN 100376725C
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crystal
cab
compound
cab4
compound crystal
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CN1920121A (en
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田永君
柳忠元
孙亚馨
于栋利
何巨龙
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Yanshan University
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Yanshan University
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Abstract

The invention discloses the binary CaB4 compound crystal and preparing method. The CaB4 compound crystal is black crystal with metallic luster, the chemical composition of which is Ca: B=1: 4. The crystal structure is tetragonal structure, the space group is P4/mbm, and the crystal parameter is a=b=0.7174nm, c=0.4103nm. The method comprises the following steps: 1 mixing the Ca and B according to proportion 1:4 at Ar condition, performing, enveloping Ta; 2 treating at 1200-1600Deg.C and 1-6GPa, dissolving Ca and CaO with dilute hydrochloric acid, and getting the product. The new non-metallic material maybe is the material for making electronic component.

Description

CaB4化合物晶体及其制备方法 CaB4 compound crystal and preparation method thereof

技术领域technical field

本发明涉及一种新型非金属材料,特别是涉及一种二元CaB4化合物晶体及其制备方法。The invention relates to a novel non-metallic material, in particular to a binary CaB4 compound crystal and a preparation method thereof.

技术背景technical background

在二元Ca-B相图中(图1),CaB6是唯一的Ca-B化合物。CaB6很容易制备得到,如用金属钙和单质硼直接反应,可制备得到高纯度的CaB6粉末;以CaO和纯B为原料,1600℃保温1小时即可反应生成CaB6相;使用CaCO3,B4C和活性C粉在真空条件下,1400℃保温2.5小时也可得到CaB6粉末。CaB6具有许多优异的性能,比如具有高熔点、高强度和高的化学稳定性,最近又发现微量La掺杂的CaB6具有高的居里温度(900K),在极高的温度下仍具有铁磁性,使其有可能成为一种新型的电子元件的制造材料。直到最近,R.Schmitt等人以Ca,B和C为原料通过元素之间的固相反应制备得到了C掺杂的CaB4-xCx相。制备方法如下,原料的配比为Ca∶B∶C=3∶2∶1,密封在Ar气环境下,在1000℃保温2小时,用盐酸除去样品中剩余的Ca以及中间相CaC2和CaB2C2,得到了黑色晶体粉末,即CaB4-xCx相。他们进行了各种尝试制备不含C的纯CaB4,但均未成功。其中,包括调整Ca和B之间的配比,反应温度在800~1200℃范围内,保温不同的时间,均得到的是CaB6相。作者认为只有在含C的环境下,才能生成CaB4-xCx相,其中含碳量<5%。In the binary Ca-B phase diagram (Figure 1), CaB 6 is the only Ca-B compound. CaB 6 is easy to prepare, such as direct reaction of metal calcium and elemental boron, can prepare high-purity CaB 6 powder; use CaO and pure B as raw materials, 1600 ℃ for 1 hour to react to form CaB 6 phase; use CaCO 3. CaB 6 powder can also be obtained by heating B 4 C and active C powder at 1400°C for 2.5 hours under vacuum. CaB 6 has many excellent properties, such as high melting point, high strength and high chemical stability. Recently, it has been found that CaB 6 doped with a small amount of La has a high Curie temperature (900K), and it still has a high Curie temperature (900K) at extremely high temperatures. Ferromagnetism makes it possible to become a new type of electronic component manufacturing material. Until recently, R. Schmitt et al. used Ca, B, and C as raw materials to prepare C-doped CaB 4-x C x phases through solid-state reactions between elements. The preparation method is as follows, the ratio of raw materials is Ca: B: C = 3: 2: 1, sealed in an Ar gas environment, kept at 1000 ° C for 2 hours, and the remaining Ca in the sample and the mesophase CaC 2 and CaB are removed with hydrochloric acid 2 C 2 , a black crystalline powder was obtained, that is, the CaB 4-x C x phase. They made various attempts to prepare pure CaB 4 without C, but were unsuccessful. Among them, including adjusting the ratio between Ca and B, the reaction temperature is in the range of 800-1200 ° C, and the temperature is kept for different times, and the CaB 6 phase is obtained. The authors believe that the CaB 4-x C x phase can only be formed in a C-containing environment, where the carbon content is <5%.

发明内容Contents of the invention

为了克服只有在含C的环境下才能生成CaB4-xCx相,本发明提供一种CaB4化合物晶体及其制备方法,该制备方法操作简便,制备的CaB4化合物晶体不含碳。In order to overcome that the CaB 4-x C x phase can only be generated in an environment containing C, the invention provides a CaB 4 compound crystal and a preparation method thereof. The preparation method is easy to operate, and the prepared CaB 4 compound crystal does not contain carbon.

这种CaB4化合物晶体的化学成分为:Ca∶B=1∶4,晶体结构为四方结构,空间群为P4/mbm,晶格参数a=b=0.7174nm,c=0.4103nm,其外观为具有金属光泽的黑色晶体,具有金属性质。The chemical composition of this CaB 4 compound crystal is: Ca: B=1: 4, crystal structure is tetragonal structure, space group is P4/mbm, lattice parameter a=b=0.7174nm, c=0.4103nm, and its appearance is Metallic black crystals with metallic properties.

CaB4化合物晶体的制备方法如下:The preparation method of CaB 4 compound crystal is as follows:

(1)将纯Ca和B按1∶4比例配制,在Ar气的环境下充分混合压片,外包Ta片;(1) Prepare pure Ca and B at a ratio of 1:4, fully mix and press into tablets under the environment of Ar gas, and outsource Ta tablets;

(2)经过1200~1600℃高温和1~6GPa高压处理后,用稀盐酸溶掉剩余的Ca和CaO,得到CaB4化合物晶体。(2) After high temperature treatment at 1200-1600° C. and high pressure treatment at 1-6 GPa, dilute hydrochloric acid was used to dissolve the remaining Ca and CaO to obtain CaB 4 compound crystals.

附图说明Description of drawings

图1为B-Ca相图;Fig. 1 is B-Ca phase diagram;

图2为CaB4晶体的X射线衍射图。Fig. 2 is an X-ray diffraction pattern of CaB4 crystal.

具体实施方式Detailed ways

实施例Example

将Ca和B按1∶4比例配制,在Ar气的环境下充分混合压片,外包Ta片,经高温高压1400℃、6GPa处理后,用稀盐酸溶掉剩余的Ca和CaO后,得到具有金属光泽的黑色晶状CaB4粉末。CaB4化合物晶体的化学成分为:Ca∶B=1∶4,晶体结构为四方结构,空间群为P4/mbm,晶格参数a=b=0.7174nm,c=0.4103nm,具有金属性质。CaB4晶体的X射线衍射图谱如图2所示,各晶面的面间距及相对强度列入表1中。Prepare Ca and B at a ratio of 1:4, fully mix and press tablets in an Ar gas environment, wrap Ta tablets, and after high temperature and high pressure treatment at 1400°C and 6GPa, dissolve the remaining Ca and CaO with dilute hydrochloric acid to obtain Metallic black crystalline CaB4 powder. The chemical composition of the CaB 4 compound crystal is: Ca:B=1:4, the crystal structure is tetragonal, the space group is P4/mbm, the lattice parameters a=b=0.7174nm, c=0.4103nm, and has metallic properties. The X-ray diffraction pattern of CaB 4 crystal is shown in Figure 2, and the interplanar spacing and relative intensity of each crystal plane are listed in Table 1.

表1CaB4晶体的各晶面的面间距及相对强度Table 1 Interplanar spacing and relative strength of each crystal plane of CaB 4 crystal

  hh   kk   ll   d<sub>obs</sub>()d<sub>obs</sub>( )   d<sub>cat</sub>()d<sub>cat</sub>(A)   I<sub>obs</sub>(%)I<sub>obs</sub>(%) I<sub>cat</sub>(%)I<sub>cat</sub>(%)   hh   kk   ll   d<sub>obs</sub>()d<sub>obs</sub>( )   d<sub>cat</sub>()d<sub>cat</sub>(A) I<sub>obs</sub>(%)I<sub>obs</sub>(%) I<sub>cat</sub>(%)I<sub>cat</sub>(%)   1001101120112010011011201120   1022122320313210221223203132   0100111012121201001110121212   5.05784.09243.57873.20223.18422.69642.52522.26642.15532.04911.98361.90051.78911.77895.05784.09243.57873.20223.18422.69642.52522.26642.15532.04911.98361.90051.78911.7789   5.073114.103713.587183.208443.190542.700782.527652.268742.157602.051851.985511.902161.790441.781085.073114.103713.587183.208443.190542.700782.527652.268742.157602.051851.985511.902161.790441.78108   2297332641008216119421922973326410082161194219   2277322651007216017321722773226510072160173217   1131323113021311313231130213   4234334543252542343345432525   0201121122313002011211223130   1.73791.72701.68931.60051.56201.42681.35281.32981.32591.30391.27701.26621.25761.22911.73791.72701.68931.60051.56201.42681.35281.32981.32591.30391.27701.26621.25761.2291   1.740041.728591.691021.601971.563471.428441.354451.330951.327091.304951.278131.267141.258321.230391.740041.728591.691021.601971.563471.428441.354451.330951.327091.304951.278131.267141.258321.23039   251981442442212102115251981442442212102115   251971442432112111115251971442432112111115

Claims (2)

1.一种二元CaB4化合物晶体,其特征在于:所合成的CaB4化合物晶体的外观为具有金属光泽的黑色晶体,其化学成分为:Ca∶B=1∶4,晶体结构为四方结构,空间群为P4/mbm,晶格参数a=b=0.7174nm,c=0.4103nm,具有金属性质。1. a binary CaB 4 compound crystal, it is characterized in that: the appearance of the synthesized CaB 4 compound crystal is a black crystal with metallic luster, its chemical composition is: Ca: B=1: 4, and the crystal structure is a tetragonal structure , the space group is P4/mbm, the lattice parameters a = b = 0.7174nm, c = 0.4103nm, with metallic properties. 2.一种制备权利要求1所述的CaB4化合物晶体的方法,其特征在于:2. a method for preparing CaB compound crystal according to claim 1, characterized in that: (1)将纯Ca和B按1∶4比例配制,在Ar气的环境下充分混合压片,外包Ta片;(1) Prepare pure Ca and B at a ratio of 1:4, fully mix and press into tablets under the environment of Ar gas, and outsource Ta tablets; (2)经过1200~1600℃高温和1~6GPa高压处理后,用稀盐酸溶掉剩余的Ca和CaO,得到CaB4化合物晶体。(2) After high temperature treatment at 1200-1600° C. and high pressure treatment at 1-6 GPa, dilute hydrochloric acid was used to dissolve the remaining Ca and CaO to obtain CaB 4 compound crystals.
CNB200610048112XA 2006-08-03 2006-08-03 CaB4 compound crystal and preparation method thereof Expired - Fee Related CN100376725C (en)

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4949305A (en) * 1972-05-31 1974-05-13
CN1125211A (en) * 1995-09-07 1996-06-26 华东理工大学 Large block body tight nanometer ceramic material and its preparation method
US20030059641A1 (en) * 2001-09-24 2003-03-27 Weaver Samuel C. Metal matrix composites of aluminum, magnesium and titanium using silicon hexaboride, calcium hexaboride, silicon tetraboride, and calcium tetraboride

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4949305A (en) * 1972-05-31 1974-05-13
CN1125211A (en) * 1995-09-07 1996-06-26 华东理工大学 Large block body tight nanometer ceramic material and its preparation method
US20030059641A1 (en) * 2001-09-24 2003-03-27 Weaver Samuel C. Metal matrix composites of aluminum, magnesium and titanium using silicon hexaboride, calcium hexaboride, silicon tetraboride, and calcium tetraboride

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
. V.P.Afanasev,A.S.Gudovskikh,A.P.Sazanov et.al.Peterb.Zh.Elektron,No.2. 1995 *
SYNTHESIS OF CaB6 SINGLE CRYSTAL AND SAMPLEEVALUTION BY PIXE MEASUREMENT. M.MIHARA et.al.International Journal of PIXE,Vol.15 No.1&2. 2005 *

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