CN109994050B - Micro LD device based on VCSEL technology - Google Patents
Micro LD device based on VCSEL technology Download PDFInfo
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- CN109994050B CN109994050B CN201711499330.XA CN201711499330A CN109994050B CN 109994050 B CN109994050 B CN 109994050B CN 201711499330 A CN201711499330 A CN 201711499330A CN 109994050 B CN109994050 B CN 109994050B
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- 238000005516 engineering process Methods 0.000 title claims abstract description 18
- 239000000758 substrate Substances 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 239000011521 glass Substances 0.000 claims description 2
- 239000000463 material Substances 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 239000010409 thin film Substances 0.000 claims description 2
- 239000011159 matrix material Substances 0.000 abstract description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 6
- 150000004706 metal oxides Chemical class 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 239000002245 particle Substances 0.000 description 5
- 230000000295 complement effect Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 244000141359 Malus pumila Species 0.000 description 1
- 235000021016 apples Nutrition 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
Classifications
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
- G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Lasers (AREA)
Abstract
The invention discloses a Micro LD device based on VCSEL technology, which controls an MOS integrated circuit (active matrix) through a computer, wherein the MOS integrated circuit can respectively control the switch and intensity of each VCSEL vertical cavity surface emitting laser diode in a Micro laser diode array, and finally forms an image. Compared with Micro LEDs, micro LD has larger light intensity, better directivity and better coherence in unit area, and has wider application prospect in industrial field and display field.
Description
Technical Field
The invention relates to a Micro LD device based on VCSEL technology.
Background
In recent years, micro LED technology has rapidly advanced, and explosion is applied in the display field and the industrial field. And a great amount of technical investment of large enterprises such as apples, samsung, beijing east and the like is obtained. Micro LED technology, i.e. LED miniaturization and matrixing technology. Refers to a high density micro-sized LED array integrated on a chip, such as an LED display screen where each LED pixel is addressable and individually driven to light. That is to say, micro LED technology is to array Micro LED chips on an integrated power supply circuit, and to control the switch and brightness of each Micro LED particle independently by the integrated power supply circuit, and finally form the required two-dimensional graph.
Since Micro LED particles emit light at 360 degrees, the Micro LED particles converge the divergence angle through a reflecting layer, a reflecting cup, a Micro lens and the like, but the final divergence angle is still large. In practical applications, it is often necessary to generate enough light intensity on the acting surface, and the light efficiency of the LED is greatly reduced by a mechanism that converges the divergence angle, such as a reflective layer, a reflective cup, and the like. Meanwhile, in practical application, higher requirements are also put forward for the light intensity of unit area.
To solve the above problems, the applicant of the present invention has first proposed a VCSEL-based Micro LD technology worldwide as an alternative to the next generation display and industrial application of Micro LED technology. Vertical-Cavity-Surface-Emitting Laser diodes (VCSELs) that emit perpendicular to the wafer Surface, with the resonator axis parallel to the PN junction Surface. A VCSEL is understood to be all such diode lasers with emission direction perpendicular to the resonator facets. In particular, this may be a surface-emitting laser whose resonator length is smaller than the thickness of the active region, a surface-emitting laser whose resonator is integrally lengthened, or a surface-emitting laser with an external or coupled resonator. Micro LD technology, i.e., micro Laser Diode matrix technology, i.e., microminiaturization and matrixing technology of LD (Laser Diode). Micro LD technology refers to integrating a high-density Micro-sized LD array on one Micro LD chip and making each LD pixel addressable, individually driven on. VCSEL-based Micro LD technology refers to integrating a high density Micro-sized VCSEL array on one Micro LD chip and making each VCSEL pixel addressable, individually driven on.
Compared with Micro LEDs, the light intensity of the Micro LD per unit area can be improved by two orders of magnitude, and the divergence angle is converged to within 30 degrees or even within 5 degrees by 180 degrees of light emission of the LEDs. Micro LD particles can adopt a single-mode laser, and emergent light of each LD particle has better coherence and more consistent polarization state.
Disclosure of Invention
The invention aims to solve the problem that a Micro LD device based on VCSEL technology can finally obtain a VCSEL array integrated with high density and Micro size on a Micro LD chip, and each VCSEL pixel can be addressed and driven to light independently, so that any optical pattern of a large number of pixels can be formed. The optical performance of the device, other display devices and other exposure devices exceeding the traditional Micro LEDs and other light sources is finally obtained.
The invention comprises the following steps: a component (1) substrate, a component (2) MOS integrated circuit, a component (3) VCSEL array (totally called VCSEL, vertical-Cavity-Surface-emission-Laser, chinese name Vertical Cavity Surface-emission Laser diode), and a component (4) external control system; each electrode power supply state of the electrode array of the component (22) on the MOS integrated circuit of the component (2) can be independently addressed and controlled through the external control system of the component (4), and then the VCSEL of each component (31) is independently controlled to emit light and extinguish through the power supply of each electrode in the electrode array of the component (22), and the VCSEL of each component (31) is controlled to emit light and extinguish to finally form a required specific laser pattern.
The substrate material of the component (1) adopts silicon base or glass base.
The component (2) is a MOS integrated circuit (MOS full-scale Metal Oxide semiconductor, chinese) and the component (2) is a MOS integrated circuit comprising PMOS (P-CHANNEL METAL Oxide Semiconductor ), NMOS (N-CHANNEL METAL Oxide Semiconductor, N-channel Metal Oxide semiconductor), CMOS (Complement Metal Oxide Semiconductor, composite complementary Metal Oxide semiconductor) and other types.
The MOS integrated circuit surface of the component (2) comprises C component (21) pins (C is larger than or equal to 1) which are connected with an external control system of the component (4), and the electrode array of the component (22) is connected with the VCSEL array of the component (3) and supplies power to the VCSEL array of the component (3). The pins of the component (21) can be arranged at any position of the MOS integrated circuit of the component (2).
The MOS integrated circuit of the component (2) comprises a multi-layer circuit structure, the surface of the MOS integrated circuit of the component (2) comprises a component (22) electrode array, each electrode in the component (22) electrode array can be independently addressed and independently control a current switch, each electrode is provided with a corresponding independent driving circuit, and driving current is provided by a thin film transistor.
The component (22) electrode array is provided with M rows (M is an integer greater than 1) and N columns (N is an integer greater than 1), and M x N electrodes are arranged in a rectangular mode, namely an included angle of 90 degrees is formed between an M-row arrangement axis M and an N-column arrangement axis N.
The VCSEL array of the component (3) comprises A rows (A is an integer larger than 1) and B columns (A is an integer larger than 1) of VCSELs of the component (31), and the total of the A.times.B VCSELs of the component (31) are arranged in a rectangular mode, namely, an included angle of 90 degrees is formed between an arrangement axis of the A rows and an arrangement axis of the B columns.
The laser emission direction of the component (31) VCSEL is perpendicular to the component (1) substrate plane; the laser wavelength range is more than or equal to 350 nanometers and less than or equal to 890 nanometers; the VCSEL side of the component (31) is 500 nm or more and 500 μm or less.
The number m of m rows of the component (22) electrode array is larger than or equal to the number A (m is larger than or equal to A) of A rows of the VCSEL array of the component (3), and the number n of n columns of the component (22) electrode array is larger than or equal to the number B (n is larger than or equal to B) of B columns of the VCSEL array of the component (3). That is, each component (31) VCSEL may be connected to an electrode in an electrode array of 1 or more components 22.
The external control system of the component (4) is a control system capable of converting a graphic digital signal into a required electric signal; the external control system of the component (4) is connected with each electrode on the electrode array of the component (22) through a plurality of leads of the component (41), and can independently control the power supply state of each electrode on the electrode array of the component (22).
Drawings
FIG. 1 is a device diagram of a Micro LD based on VCSEL technology
Fig. 2 is a 45 view of a MOS integrated circuit
Fig. 3 is a front view of a MOS integrated circuit
Fig. 4 is a 45 view of a VCSEL array
Figure 5 is a front view of a VCSEL array
It is understood that various changes and modifications may be made by one skilled in the art after reading the disclosure herein, and that such equivalents are intended to be within the scope of the application as defined by the appended claims.
Claims (6)
1. An apparatus of Micro LD based on VCSEL technology, comprising: a component (1) substrate, a component (2) MOS integrated circuit, a component (3) VCSEL array and a component (4) external control system; each electrode power supply state of the electrode array of the component (22) on the MOS integrated circuit of the component (2) can be independently addressed and controlled through the external control system of the component (4), so that the VCSEL of each component (31) is independently controlled to emit light and extinguish through the power supply of each electrode in the electrode array of the component (22), and the VCSEL of each component (31) is controlled to emit light and extinguish to finally form a required laser pattern; the MOS integrated circuit surface of the component (2) comprises C component (21) pins, wherein C is more than or equal to 1, the component (21) pins are connected with an external control system of the component (4), and the electrode array of the component (22) is connected with the VCSEL array of the component (3) and supplies power for the VCSEL array of the component (3); pins of the component (21) are arranged at any positions of the MOS integrated circuit of the component (2); the electrode array of the component (22) is provided with M rows and N columns, and M x N electrodes are arranged in a rectangular shape, wherein M is an integer greater than 1, N is an integer greater than 1, and an included angle of 90 degrees is formed between an M row arrangement axis M and an N column arrangement axis N; the VCSEL array of the component (3) is provided with A rows and B columns of VCSELs of the component (31), and the total of the A.times.B VCSELs of the component (31) are arranged in a rectangular shape, wherein A is an integer greater than 1, B is an integer greater than 1, and the arrangement axis of the A rows and the arrangement axis of the B columns form an included angle of 90 degrees; the laser emission direction of the VCSEL of the component (31) is perpendicular to the substrate plane of the component (1); the laser wavelength range is more than or equal to 350 nanometers and less than or equal to 890 nanometers; the VCSEL side of the component (31) is 500 nm or more and 500 μm or less.
2. The device according to claim 1, characterized in that the component (1) substrate material is silicon-based or glass-based.
3. The apparatus according to claim 1, wherein: the component (2) MOS integrated circuit comprises PMOS, NMOS and CMOS types.
4. The device of claim 1, wherein the component (2) MOS integrated circuit comprises a multi-layer circuit structure, the component (2) MOS integrated circuit surface comprises an array of component (22) electrodes, each electrode in the array of component (22) electrodes being independently addressable and independently controllable current switches, each electrode having its corresponding independent drive circuit, the drive current being provided by a thin film transistor.
5. The device according to claim 4, characterized in that each component (31) VCSEL is connectable to an electrode in an electrode array of 1 or more components (22).
6. The apparatus of claim 1, wherein the external control system of the component (4) is a control system capable of converting the graphic digital signal into a desired electrical signal, and wherein the external control system of the component (4) is connected to each electrode of the electrode array of the component (22) by a plurality of component (41) leads, and wherein the power state of each electrode of the electrode array of the component (22) is independently controlled.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711499330.XA CN109994050B (en) | 2017-12-29 | 2017-12-29 | Micro LD device based on VCSEL technology |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711499330.XA CN109994050B (en) | 2017-12-29 | 2017-12-29 | Micro LD device based on VCSEL technology |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109994050A CN109994050A (en) | 2019-07-09 |
| CN109994050B true CN109994050B (en) | 2024-11-08 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711499330.XA Active CN109994050B (en) | 2017-12-29 | 2017-12-29 | Micro LD device based on VCSEL technology |
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| Country | Link |
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| CN (1) | CN109994050B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114937917A (en) * | 2022-05-20 | 2022-08-23 | 北京京东方技术开发有限公司 | Optical device, laser light source and manufacturing method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1375744A (en) * | 2001-03-13 | 2002-10-23 | 海德堡印刷机械股份公司 | Image-making device with VCSEL light resource array for machine plate |
| CN102750904A (en) * | 2012-07-18 | 2012-10-24 | 刘纪美 | Active addressing single-chip LED microdisplay |
| CN207966351U (en) * | 2017-12-29 | 2018-10-12 | 北京德瑞工贸有限公司 | A kind of device of the Micro LD based on VCSEL technologies |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5325386A (en) * | 1992-04-21 | 1994-06-28 | Bandgap Technology Corporation | Vertical-cavity surface emitting laser assay display system |
| CN1167300A (en) * | 1997-05-27 | 1997-12-10 | 中国航天工业总公司第一研究院第十三研究所 | Method and system for making and shaping two-dimension body by use of energy field |
| JP3736399B2 (en) * | 2000-09-20 | 2006-01-18 | セイコーエプソン株式会社 | Drive circuit for active matrix display device, electronic apparatus, drive method for electro-optical device, and electro-optical device |
| US7339963B2 (en) * | 2002-11-27 | 2008-03-04 | International Business Machines Corporation | High speed data channel including a CMOS VCSEL driver and a high performance photodetector and CMOS photoreceiver |
| CN104319629A (en) * | 2014-11-10 | 2015-01-28 | 李德龙 | High-power semiconductor laser based on VCSEL and VCSEL laser module thereof |
| WO2016074299A1 (en) * | 2014-11-10 | 2016-05-19 | 李德龙 | High-power semiconductor laser based on vcsel and optical convergence method therefor |
-
2017
- 2017-12-29 CN CN201711499330.XA patent/CN109994050B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1375744A (en) * | 2001-03-13 | 2002-10-23 | 海德堡印刷机械股份公司 | Image-making device with VCSEL light resource array for machine plate |
| CN102750904A (en) * | 2012-07-18 | 2012-10-24 | 刘纪美 | Active addressing single-chip LED microdisplay |
| CN207966351U (en) * | 2017-12-29 | 2018-10-12 | 北京德瑞工贸有限公司 | A kind of device of the Micro LD based on VCSEL technologies |
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| CN109994050A (en) | 2019-07-09 |
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Effective date of registration: 20210728 Address after: 100000 No. a2079, floor 2, building 2, No. 14, Zhonghe street, Beijing Economic and Technological Development Zone (centralized office area) Applicant after: Beijing digital optical core technology Co.,Ltd. Address before: 100083 block a, building 5, Jiulong garden, Shuangjing, Chaoyang District, Beijing Applicant before: BEIJING DERUI INDUSTRY AND TRADE Co.,Ltd. |
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