CN104319629A - High-power semiconductor laser based on VCSEL and VCSEL laser module thereof - Google Patents
High-power semiconductor laser based on VCSEL and VCSEL laser module thereof Download PDFInfo
- Publication number
- CN104319629A CN104319629A CN201410643574.0A CN201410643574A CN104319629A CN 104319629 A CN104319629 A CN 104319629A CN 201410643574 A CN201410643574 A CN 201410643574A CN 104319629 A CN104319629 A CN 104319629A
- Authority
- CN
- China
- Prior art keywords
- vcsel
- laser module
- laser
- reflection
- optical transmission
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 31
- 230000003287 optical effect Effects 0.000 claims abstract description 53
- 230000005540 biological transmission Effects 0.000 claims abstract description 44
- 238000003491 array Methods 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 4
- 230000003667 anti-reflective effect Effects 0.000 claims description 3
- 230000008020 evaporation Effects 0.000 claims description 3
- 238000001704 evaporation Methods 0.000 claims description 3
- 238000005498 polishing Methods 0.000 claims description 3
- 238000002310 reflectometry Methods 0.000 abstract description 11
- 238000010586 diagram Methods 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000003814 drug Substances 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 241001270131 Agaricus moelleri Species 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 230000003679 aging effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Landscapes
- Semiconductor Lasers (AREA)
Abstract
The invention discloses a VCSEL laser module. The VCSEL laser module comprises a VCSEL chip array formed by a plurality of VCSEL chips, and an inner wall reflection type optical transmission device arranged in front of the light-exiting surface of the VCSEL chip array, wherein the light-exiting surface of the VCSEL chip array carries out secondary reflection on light reflected by a target object and the inner wall reflection type optical transmission device. According to the VCSEL laser module, based on the extremely high reflectivity of the surfaces of the VCSEL chips and the inner wall reflection type optical transmission device, efficient laser transmission is achieved, the reflected light refracted by the target object is efficiently reutilized, and the utilization rate of lasers is greatly increased. The structure can greatly increase the exiting efficiency of the lasers and the absorptivity of the target object, effectively gather light beams and further improve the optical power intensity of an exiting opening. The invention further provides a high-power semiconductor laser comprising the VCSEL laser module. The laser has broad application prospects in the fields of laser medical treatment, industrial laser processing and the like.
Description
Technical field
The present invention relates to a kind of semiconductor laser module, particularly relate to a kind of vertical cavity surface emitting laser (Vertical Cavity Surface Emitting Laser is called for short VCSEL) that uses as the laser module of light source; Relate to a kind of high-power semiconductor laser based on VCSEL laser module simultaneously, belong to semiconductor laser field.
Background technology
In the past between Two decades years, in high-power semiconductor laser field, the edge-emission semiconductor laser based on GaAs material occupies dominant position always, and is widely used in the fields such as industry, medical treatment, scientific research.But edge-emission semiconductor laser exists its fatal defect, although its life expectancy reaches tens thousand of hours, but under pulse condition, catastrophic optical damage damage probability is very big, serious to aging effects, so its actual life far can not reach desirable life expectancy.Therefore, need to provide a kind of semiconductor laser that can be used for industrial circle newly.
In field of semiconductor lasers, according to light emission direction and the flat relation of plane of laser chip place epitaxial wafer, laser can be divided into vertical cavity surface emitting laser (Vertical Cavity Surface Emitting Laser is called for short VCSEL) and edge-emission semiconductor laser (Edge Emitting Laser Diode) two classes.Wherein, the light emission direction of vertical cavity surface emitting laser, perpendicular to epitaxial wafer direction, penetrate, and the light emission direction of edge-emission semiconductor laser is parallel to epitaxial wafer direction, penetrates from the edge of reaction zone from the end face of reaction zone.The structure of vertical cavity surface emitting laser (VCSEL) and edge-emission semiconductor laser can be shown in Figure 1 schematic diagram.
Edge-emission semiconductor laser and VCSEL have following features respectively: edge-emission semiconductor laser is linear light sorurce, it is very big with the angle of divergence difference of horizontal direction in the vertical direction, and (vertical direction full-shape is about about 60 ~ 70 degree, horizontal direction full-shape is about about 7 ~ 10 degree), and its far field light intensity presents Gaussian Profile; And VCSEL is sphere shape light, its angle of divergence less (angle of divergence full-shape is about about 15 ~ 20 degree), its far field light intensity is similar to flat-top distribution, energy even.Therefore, compared with edge-emission semiconductor laser, the light that VCSEL launches more easily converges, and Energy distribution is even on far field objects thing.In addition, compared with edge-emission semiconductor laser, VCSEL also has other advantage, such as: there is higher working temperature, and the longer and failure rate is low of life expectancy, and can adopt and be similar to LED technique and encapsulate, packaging technology requires low.But traditional VCSEL, due to relatively low electrical efficiency, poor optical brightness, is never paid close attention in high power market.
Along with the progress of technology, VCSEL achieves the high-power output close to edge-emission semiconductor laser gradually, simultaneously due to the structure of its uniqueness, the plurality of advantages existed in its application, as high reliability, high temperature resistant, uniform optical distribution, surperficial high reflectance etc.If improved VCSEL, make it can be applied to part industrial application gradually, a brand-new revolution will be brought to field of semiconductor lasers.
Vertical cavity surface emitting laser (VCSEL) contrasts with the specific performance of edge-emission semiconductor laser and refers to table 1.
Note: * FIT leads the number of faults occurred in i.e. every 1,000,000,000 devices function hour
The structural behaviour of table 1 edge-emission semiconductor laser and VCSEL contrasts
Summary of the invention
Primary technical problem to be solved by this invention is to provide a kind of VCSEL laser module that can realize efficiency light transmission and converge.
Another technical problem to be solved by this invention is to provide a kind of high-power semiconductor laser comprising above-mentioned VCSEL laser module.
In order to realize foregoing invention object, the present invention adopts following technical proposals:
A kind of VCSEL laser module, the inwall reflection-type optical transmission apparatus in the VCSEL chip array comprising multiple VCSEL chip composition and the exiting surface front being arranged on described VCSEL chip array; The exiting surface of described VCSEL chip array carries out secondary reflection to the reflection ray reflected through object and described inwall reflection-type optical transmission apparatus.
Wherein more preferably, the exit portal area of described inwall reflection-type optical transmission apparatus is less than entrance port area.
Wherein more preferably, the entrance port of described inwall reflection-type optical transmission apparatus all covers and only covers the light-emitting zone of described VCSEL chip array.
Wherein more preferably, in described VCSEL chip array, multiple VCSEL chip is close-packed arrays in a plane, and its exiting surface forms a planar light extracting face.
Or wherein more preferably, in described VCSEL chip array, multiple VCSEL chip is in certain angle arrangement, the exiting surface of multiple VCSEL chip forms the polygon exiting surface that take object as the approximate arc in the center of circle.
Wherein more preferably, described inwall reflection-type optical transmission apparatus is the mirror barrel of inwall polishing.
Or wherein more preferably, described inwall reflection-type optical transmission apparatus is bored based on the leaded light of inwall total reflection.
Wherein more preferably, described leaded light cone entrance port and exit portal evaporation optical anti-reflective film.
A kind of high-power semiconductor laser, comprises above-mentioned VCSEL laser module.
VCSEL laser module provided by the invention, adopts the emission of light of inwall reflection-type optical transmission apparatus to VCSEL chip array effectively to transmit, makes it be radiated on object; And by inwall reflection-type optical transmission apparatus, by the light reflection that reflects from object to the exiting surface of VCSEL chip array, the exiting surface of VCSEL chip array carries out secondary reflection to the reflection ray reflected through object and described inwall reflection-type optical transmission apparatus.Surface due to VCSEL chip array has high reflectivity, especially on the area shared by VCSEL chip, reflectivity up to 99.5% even more than, so the reflection ray that object can turn back by this VCSEL Chip array surface carries out efficient secondary utilization, substantially increase the utilance of laser.
This VCSEL laser module can increase substantially the outgoing efficiency of laser and the absorptivity of object, and by using the inwall reflection-type optical transmission apparatus of taper effectively to converge emergent ray, the optical power density of exit portal can be improved further.In conjunction with VCSEL itself, there is longer useful life, and it shows high reliability under pulse condition, above-mentioned VCSEL laser module is applied to high-power semiconductor laser, there is great realistic meaning.The high-power semiconductor laser comprising above-mentioned VCSEL laser module provided by the invention has broad application prospects at laser medicine and industrial lasers processing and other fields.
Accompanying drawing explanation
Fig. 1 is the structural representation of vertical cavity surface emitting laser and edge-emitting laser;
Fig. 2 is in the first embodiment of the present invention, the structural representation of VCSEL laser module;
Fig. 3 is in VCSEL chip array, the first arrangement mode schematic diagram of multiple VCSEL chip;
Fig. 4 is in VCSEL chip array, the second arrangement mode schematic diagram of multiple VCSEL chip;
Fig. 5 is in the second embodiment of the present invention, the structural representation of VCSEL laser module.
Embodiment
Below in conjunction with the drawings and specific embodiments, detailed specific description is carried out to technology contents of the present invention.
High-power semiconductor laser provided by the invention, comprises VCSEL laser module as shown in Figure 2.This VCSEL laser module, the inwall reflection-type optical transmission apparatus 2 in the VCSEL chip array 1 comprising multiple VCSEL chip composition and the exiting surface front being arranged on VCSEL chip array 1.By VCSEL chip array 1 and inwall reflection-type optical transmission apparatus 2 being placed on the front of object 3, then opening VCSEL laser, realizing the laser ablation effect of VCSEL laser module to object 3.Wherein, inwall reflection-type optical transmission apparatus 2 effectively can transmit the emission of light of VCSEL chip array 1, makes its cover on object 3; And, inwall reflection-type optical transmission apparatus 2, can by the light reflection that reflects from object 3 on the exiting surface of VCSEL chip array 1, the exiting surface of VCSEL chip array 1 can carry out efficient secondary reflection to the reflection ray reflected through object 3 and inwall reflection-type optical transmission apparatus 2.
Specifically, as shown in Figure 3 and Figure 4, in VCSEL chip array 1, single VCSEL chip of laser 10 is directly welded on heat radiation substrate, forms an exit plane; Multiple VCSEL chip 10 close-packed arrays, forms a larger exiting surface; Welded by spun gold 11 between multiple VCSEL chip 10, and outside whole exiting surface, be connected with negative electrode 12 and anode 13.The character of VCSEL itself determines this exiting surface and has high reflectivity for laser, on the area especially shared by VCSEL chip 10, reflectivity up to 99.5% even more than.For the gap portion that reflectivity is relatively low, arranged more closely by VCSEL chip 10, it can be made to be reduced to minimum degree.Therefore, the exiting surface of VCSEL chip 10 has higher secondary utilance for the reflection ray reflexing to its surface.
Composition graphs 2 to Fig. 5 is known, in VCSEL chip array 1, multiple VCSEL chip 10 can in a plane close-packed arrays, thus make its exiting surface close-packed arrays become a planar light extracting face, also can be in certain angle arrangement by multiple VCSEL chip 10, make its exiting surface form the polygon exiting surface of the approximate arc that is the center of circle with object 3.Wherein, multiple VCSEL chip separately with object 3 for the center of circle, equidistant, equiangularly arranged.VCSEL chip array 1 is similar to the structural representation of the polygon exiting surface of arc see Fig. 5.
Inwall reflection-type optical transmission apparatus 2 can be selected and bore (can be the optics such as directional light cone or halfpace type light cone) based on the leaded light of inwall total reflection, utilizes inwall total reflection mode to realize laser from chip light emitting district to the transmission of object 3 and convergence.Refractive index and the transmitance of guide-lighting cone are more high better, and the length selection of guide-lighting cone is more short better, but will note the selection of guide-lighting coning angle, after avoiding multiple total reflection, overflow angle of total reflection scope because incident angle changes.In order to improve the light transmission efficiency of guide-lighting cone, entrance port and the exit portal of guide-lighting cone can distinguish evaporation optical anti-reflective film.
Inwall reflection-type optical transmission apparatus 2 can also select the mirror barrel of inwall polishing, utilizes inwall mirror-reflection mode to realize laser from chip light emitting district to the transmission of object 3 and convergence.Therefore, the inwall reflectivity of mirror barrel is more high better, and the selection of angle is the smaller the better, and the selection of length is also more short better.
Inwall reflection-type optical transmission apparatus 2 is best with the reflection of parallel inwall, or formation exit portal is greater than the opening angle of entrance port, and be also conducive to the abundant injection of laser, wherein, opening angle is advisable to be less than 15 degree.If need the optical power density improving delivery outlet position, the low-angle that can also do from entrance port to exit portal shrinks, but will notice that converging angles is larger for planar light extracting face, then larger on the impact of outgoing efficiency.In addition, if select an exit portal area to be less than the inwall reflection-type optical transmission apparatus 2 of VCSEL chip 10 luminous zone area, then the optical power density on object 3 surface can be improved to a certain extent.It should be noted that, for planar light extracting face, can select in above-mentioned several design any one, namely can select parallel inwall reflection, design that design that exit portal is greater than entrance port or exit portal are less than entrance port.And for the polygon exiting surface of approximate arc, preferably select the design that loophole is less than entrance port, thus the optical power density on object 3 surface can be improved further.
With inwall reflection-type optical transmission apparatus 2 near one end of object 3 for exit portal, with inwall reflection-type optical transmission apparatus 2 near one end of VCSEL chip array 1 for entrance port.The entrance port all standing of inwall reflection-type optical transmission apparatus 2 and only cover the light-emitting zone of VCSEL chip battle array 1, and reduce gap as far as possible and avoid covering the not light-emitting zone of VCSEL chip.Such as, the surface of the VCSEL chip array 1 shown in Fig. 3, the entrance port of inwall reflection-type optical transmission apparatus 2 only can cover the exiting surface (region namely in Fig. 3 in dotted line frame) of middle 6 pieces of VCSEL chips 10, the surface of the VCSEL chip array 1 shown in Fig. 4, the entrance port of inwall reflection-type optical transmission apparatus 2 only can cover the exiting surface (region namely in Fig. 4 in dotted line frame) of compact arranged 4 pieces of VCSEL chips 10, instead of covers the whole surface of VCSEL chip array 1 as shown in Figure 3 and Figure 4.
Like this, VCSEL chip light emitting district and this inwall reflection-type optical transmission apparatus 2 constitute one object 3 one end open, inwall has the cavity of high reflectivity.In this cavity, the laser that VCSEL itself sends, and the laser that object is reflected back, except absorbing because of slight internal, escaping slot and total reflection overflow except a small amount of optical loss that (if using guide-lighting cone) cause, and most luminous energy exports from the exit portal of inwall reflection-type optical transmission apparatus 2 near object 3 one end and fully absorbed by object 3.
In actual use, inwall reflection-type optical transmission apparatus 2 entrance port closely covers the luminous zone of VCSEL chip 10, the two should be close as far as possible, escape to avoid the laser at gap place, simultaneously for the non-luminous region of VCSEL chip 10, the outside of optics should be placed in as far as possible, the reflecting rate that VCSEL exiting surface is greater than 99.5% can be made full use of like this.The exit portal of inwall reflection-type optical transmission apparatus, as far as possible near object 3 surface, does not specifically have mandatory required distance, but the gap that nearer Distance geometry is less, more fully can improve the laser light absorbing efficiency of object.
In high-power applications occasion, general edge-emitting laser often superposes encapsulation in the vertical direction successively, realizes larger gross power and exports.Need between multiple edge-emitting laser to ensure certain gap, so that encapsulation and heat radiation.This part gap generally comprises space and heat carrier.These gaps and each chip together form the exiting surface of whole laser.This exiting surface is very low to sharp light reflectance, often absorbs reverberation, instead of is gone back by reflected light back.Therefore, in a lot of medical treatment with industrial applications, edge-emitting laser is generally only applicable to the disposable radiation to object, and very low to the utilance of the reverberation that object turns back.And at this on the one hand, surface due to VCSEL chip array has high reflectivity, especially on the area shared by VCSEL chip, reflectivity up to 99.5% even more than, VCSEL laser shows more excellent characteristic in conjunction with specific optical delivery device.In this VCSEL module, the reflection ray that object can turn back by VCSEL Chip array surface carries out efficient secondary utilization, substantially increase the utilance of laser, significantly can improve the outgoing efficiency of laser and the absorptivity of object, and the optical power density of exit portal can be improved further.
In sum, VCSEL laser module provided by the invention relies on the high reflectivity of VCSEL chip surface and inwall reflection-type optical transmission apparatus, achieve high efficiency laser transmission, and efficient secondary utilization has been carried out to the reverberation that object turns back, substantially increase the utilance of laser.This structure significantly can improve the outgoing efficiency of laser and the absorptivity of object, and can effective converging beam, improves the optical power density of exit portal further.Because VCSEL itself has longer useful life, and it shows high reliability under pulse condition, above-mentioned VCSEL laser module is applied to high-power semiconductor laser field, has great realistic meaning.This high-power semiconductor laser comprising VCSEL laser module, structure is simple, with low cost, is convenient to application implementation, has broad application prospects at laser medicine and industrial lasers processing and other fields.
Above the high-power semiconductor laser based on VCSEL provided by the present invention and VCSEL laser module thereof are described in detail.For one of ordinary skill in the art, to any apparent change that it does under the prerequisite not deviating from connotation of the present invention, all by formation to infringement of patent right of the present invention, corresponding legal liabilities will be born.
Claims (9)
1. a VCSEL laser module, the inwall reflection-type optical transmission apparatus in the VCSEL chip array that it is characterized in that comprising multiple VCSEL chip composition and the exiting surface front being arranged on described VCSEL chip array;
The exiting surface of described VCSEL chip array carries out secondary reflection to the reflection ray reflected through object and described inwall reflection-type optical transmission apparatus.
2. VCSEL laser module as claimed in claim 1, is characterized in that:
The exit portal area of described inwall reflection-type optical transmission apparatus is less than entrance port area.
3. VCSEL laser module as claimed in claim 1 or 2, is characterized in that:
The entrance port of described inwall reflection-type optical transmission apparatus all covers and only covers the light-emitting zone of described VCSEL chip array.
4. VCSEL laser module as claimed in claim 1 or 2, is characterized in that:
In described VCSEL chip array, multiple VCSEL chip is close-packed arrays in a plane, and its exiting surface forms a planar light extracting face.
5. VCSEL laser module as claimed in claim 1 or 2, is characterized in that:
In described VCSEL chip array, multiple VCSEL chip is in certain angle arrangement, and the exiting surface of multiple VCSEL chip forms the polygon exiting surface that take object as the approximate arc in the center of circle.
6. VCSEL laser module as claimed in claim 1 or 2, is characterized in that:
Described inwall reflection-type optical transmission apparatus is the mirror barrel of inwall polishing.
7. VCSEL laser module as claimed in claim 1 or 2, is characterized in that:
Described inwall reflection-type optical transmission apparatus is bored based on the leaded light of inwall total reflection.
8. VCSEL laser module as claimed in claim 7, is characterized in that:
The entrance port of described leaded light cone and exit portal evaporation optical anti-reflective film.
9. a high-power semiconductor laser, is characterized in that the VCSEL laser module comprised in claim 1 ~ 8 described in any one.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410643574.0A CN104319629A (en) | 2014-11-10 | 2014-11-10 | High-power semiconductor laser based on VCSEL and VCSEL laser module thereof |
| EP14905924.8A EP3220494A4 (en) | 2014-11-10 | 2014-12-07 | High-power semiconductor laser based on vcsel and optical convergence method therefor |
| PCT/CN2014/093208 WO2016074299A1 (en) | 2014-11-10 | 2014-12-07 | High-power semiconductor laser based on vcsel and optical convergence method therefor |
| US15/525,592 US10199801B2 (en) | 2014-11-10 | 2014-12-07 | High-power semiconductor laser based on VCSEL and optical convergence method therefor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410643574.0A CN104319629A (en) | 2014-11-10 | 2014-11-10 | High-power semiconductor laser based on VCSEL and VCSEL laser module thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104319629A true CN104319629A (en) | 2015-01-28 |
Family
ID=52374828
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410643574.0A Pending CN104319629A (en) | 2014-11-10 | 2014-11-10 | High-power semiconductor laser based on VCSEL and VCSEL laser module thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104319629A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109994050A (en) * | 2017-12-29 | 2019-07-09 | 北京德瑞工贸有限公司 | A kind of device of the Micro LD based on VCSEL technology |
| CN110190518A (en) * | 2018-02-23 | 2019-08-30 | 朗美通经营有限责任公司 | Transmitter array including the distribution of non-homogeneous transmitter |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201556835U (en) * | 2009-11-07 | 2010-08-18 | 桂林电子科技大学 | Light pipe capable of symmetrically converting semiconductor laser and array beams thereof |
| CN202602081U (en) * | 2012-05-11 | 2012-12-12 | 中国工程物理研究院激光聚变研究中心 | Coupling system of 100-kilowatt level area array LD array |
| WO2013032954A1 (en) * | 2011-08-26 | 2013-03-07 | Joseph John R | High speed free-space optical communications |
| US20130223846A1 (en) * | 2009-02-17 | 2013-08-29 | Trilumina Corporation | High speed free-space optical communications |
| CN103412406A (en) * | 2013-07-30 | 2013-11-27 | 中国科学院半导体研究所 | Red light semiconductor area array light source device for laser display |
| CN204290035U (en) * | 2014-11-10 | 2015-04-22 | 李德龙 | Based on high-power semiconductor laser and the VCSEL laser module thereof of VCSEL |
-
2014
- 2014-11-10 CN CN201410643574.0A patent/CN104319629A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20130223846A1 (en) * | 2009-02-17 | 2013-08-29 | Trilumina Corporation | High speed free-space optical communications |
| CN201556835U (en) * | 2009-11-07 | 2010-08-18 | 桂林电子科技大学 | Light pipe capable of symmetrically converting semiconductor laser and array beams thereof |
| WO2013032954A1 (en) * | 2011-08-26 | 2013-03-07 | Joseph John R | High speed free-space optical communications |
| CN202602081U (en) * | 2012-05-11 | 2012-12-12 | 中国工程物理研究院激光聚变研究中心 | Coupling system of 100-kilowatt level area array LD array |
| CN103412406A (en) * | 2013-07-30 | 2013-11-27 | 中国科学院半导体研究所 | Red light semiconductor area array light source device for laser display |
| CN204290035U (en) * | 2014-11-10 | 2015-04-22 | 李德龙 | Based on high-power semiconductor laser and the VCSEL laser module thereof of VCSEL |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109994050A (en) * | 2017-12-29 | 2019-07-09 | 北京德瑞工贸有限公司 | A kind of device of the Micro LD based on VCSEL technology |
| CN110190518A (en) * | 2018-02-23 | 2019-08-30 | 朗美通经营有限责任公司 | Transmitter array including the distribution of non-homogeneous transmitter |
| CN110190518B (en) * | 2018-02-23 | 2022-05-24 | 朗美通经营有限责任公司 | Emitter array including non-homogeneous emitter distribution |
| US11451012B2 (en) | 2018-02-23 | 2022-09-20 | Lumentum Operations Llc | Emitter array that includes inhomogeneous emitter distribution to flatten a beam profile of the emitter array |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10199801B2 (en) | High-power semiconductor laser based on VCSEL and optical convergence method therefor | |
| CN108550677B (en) | Ultraviolet LED packaging device | |
| CN104332822A (en) | Optical convergence method of VCSEL (Vertical Cavity Surface Emitting Laser) and packing structure of VCSEL | |
| US20140098541A1 (en) | Lighting apparatus | |
| CN204290035U (en) | Based on high-power semiconductor laser and the VCSEL laser module thereof of VCSEL | |
| US8823032B2 (en) | Light-emitting diode element, method for manufacturing light guide structure thereof and equipment for forming the same | |
| CN104428961A (en) | A large-diameter laser amplifier based on multi-dimensional laser diode stack side pumping | |
| US20060078031A1 (en) | InGaN LED pumped II-VI semiconductor laser | |
| TWI651491B (en) | Illuminating device | |
| CN104353194A (en) | High-power VCSEL laser treatment device with skin cooling function | |
| CN104319629A (en) | High-power semiconductor laser based on VCSEL and VCSEL laser module thereof | |
| CN204290033U (en) | For realizing the VCSEL individual laser package structure of optical collection | |
| CN204275310U (en) | There is the high power VCSEL device for laser therapy of skin refrigerating function | |
| CN209282608U (en) | A kind of light beam closes beam lens, device and Optical Maser System | |
| CN102868088A (en) | Device and method for enhancing feedback of external cavity feedback spectrum beam combination semiconductor laser | |
| CN101561558B (en) | Reshaping device for semiconductor laser diode array pumping | |
| GB2593181A (en) | Micro-LED device | |
| CN214899327U (en) | Multi-tube semiconductor laser | |
| CN110906281A (en) | Transmission-type laser lighting device based on rod-shaped fluorescent material | |
| CN208707076U (en) | A kind of multiple beam vertical cavity surface-emitting laser chip | |
| CN220891910U (en) | Transmission type laser light source | |
| CN220473795U (en) | Beam shrinking and shaping structure for laser emitted light spots and light source device | |
| CN216450929U (en) | Self-frequency-doubling white light module | |
| CN214011712U (en) | Laser projection module | |
| CN218919558U (en) | Reflection type laser excited fluorescence light source |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C41 | Transfer of patent application or patent right or utility model | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20151009 Address after: 065000 Langfang city of Hebei province Sanhe Yanjiao Development Zone north loop aeonmed Industrial Park G Building 5 floor Applicant after: Sanhe Laser Technology Co., Ltd. Address before: 100094 Beijing city northwest of Haidian District Wang Tun Dian Industrial Zone No. 9 Building No. 1 hospital 3 Applicant before: Li Delong |
|
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20150128 |