CN109950172A - Semiconductor curing method - Google Patents
Semiconductor curing method Download PDFInfo
- Publication number
- CN109950172A CN109950172A CN201711383262.0A CN201711383262A CN109950172A CN 109950172 A CN109950172 A CN 109950172A CN 201711383262 A CN201711383262 A CN 201711383262A CN 109950172 A CN109950172 A CN 109950172A
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- China
- Prior art keywords
- curing
- plate
- product
- curing method
- glass plate
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- 238000001723 curing Methods 0.000 title claims abstract description 24
- 239000004065 semiconductor Substances 0.000 title claims abstract description 15
- 239000011521 glass Substances 0.000 claims abstract description 12
- 238000007711 solidification Methods 0.000 claims description 11
- 230000008023 solidification Effects 0.000 claims description 11
- 239000003795 chemical substances by application Substances 0.000 abstract description 9
- 238000010438 heat treatment Methods 0.000 abstract description 4
- 238000005520 cutting process Methods 0.000 abstract description 2
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 239000000047 product Substances 0.000 description 7
- 239000011265 semifinished product Substances 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000005538 encapsulation Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000004806 packaging method and process Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 241001391944 Commicarpus scandens Species 0.000 description 1
- 208000027418 Wounds and injury Diseases 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 208000014674 injury Diseases 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Landscapes
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Abstract
The invention provides a semiconductor curing method, which comprises the following steps of placing a light and thin or soft sample on a transparent glass plate; adhering one surface to be protected to a curing flat plate; and coating a small amount of curing agent on one surface of the product opposite to the glass plate, and placing the product on a heating table for baking and curing. The invention has simple structure, avoids the phenomena of warping and twisting, can protect the sample and reduce the stress in the cutting process.
Description
Technical field
The invention mainly relates to semiconductor field more particularly to a kind of curing methods of semiconductor.
Background technique
Existing curing method: being to be mixed into liquid using curing agent and solidification powder being placed in grinding tool after sample sections
Mold is poured into, solidifies demoulding after a period of time.
Have the following problems a little: too soft or too thin sample is sliced clamping timing and is easy for deforming, influences subsequent point
Analysis, it is higher to the requirement for horizontality of subsequent incision if laying flat on one's back solidification, it is relatively time-consuming.
Chinese invention patent is disclosed, patent name: application number CN200810096293.2 reduces the heat of encapsulation angularity
Processing method, the applying date: 20080508, it discloses a kind of heat treatment methods comprising provides a lead frame type semiconductor package
It fills semi-finished product and imports a heating means.Lead frame type semiconductor packaging semi-finished product includes a lead frame and an adhesive body.It leads
Coil holder includes multiple encapsulation units, and adhesive body coats these encapsulation units.Heating means are equipped with a merging temperature and one
Peak temperature.The temperature of lead frame type semiconductor packaging semi-finished product is by merging temperature through the thermal response time and to reach to peak value temperature
Degree, and the deformation quantity of lead frame type semiconductor packaging semi-finished product is made to reduce or be released the stress between lead frame and adhesive body
To reduce angularity, wherein peak temperature is set between 190 degree~260 degree.
Summary of the invention
In view of the above drawbacks of the prior art, the present invention provides a kind of curing method of semiconductor, and solution is as follows, by
Following steps composition:
(1) frivolous or soft sample is placed on transparency glass plate;
(2) one side to be protected will be needed close to solidification plate;
(3) it is coated with a small amount of curing agent in the product one side opposite with glass plate, is placed on warm table and toasts admittedly
Change.
Preferably, a solidification plate can be used again in the another side that product is not coated with curing agent when sample is intractable
It is pressed, it is then placed on warm table and toasts, two sides is all solidified.
Preferably, solidification plate is glass plate.
Preferably, cured temperature is 220 DEG C.
Preferably, the size for solidifying plate is slightly larger than the size of product.
The phenomenon that beneficial effects of the present invention: avoiding warpage, distortion occurs, and can protect sample, reduces incision process
In stress.
Specific embodiment
The present invention includes:
(1) frivolous or soft sample is placed on transparency glass plate;
(2) one side to be protected will be needed close to solidification plate, can be played a protective role;
(3) it is coated with a small amount of curing agent in the product one side opposite with glass plate, is placed on warm table and toasts admittedly
Change.
It is preferred in this embodiment, when sample is intractable one can be used again in the another side that product is not coated with curing agent
A solidification plate is pressed, is then placed on warm table and toasts, and two sides is all solidified.
Preferred in this embodiment, solidification plate is glass plate;And the size for solidifying plate is mating with product size;Choosing
The transparency of glass plate is high, it can be seen that the position of incision, will not be easy to break, and it otherwise will lead to injury to personnel.
It is preferred in this embodiment, it is preferred that cured temperature is 220 DEG C.
It is preferred in this embodiment, it is preferred that the size for solidifying plate is slightly larger than the size of product.
In use, by the curing agent of liquid being become the plate and a kind of liquid curing-agent of a solid, in this way may be used
Very thin or very soft sample is sticked on plate, warpage is prevented, then the generation of distortion is solidified using curing agent,
Both warpage is avoided, the phenomenon that distortion occurs, and can protect sample, reduces the stress during cutting.
The principles and effects of present patent application are only illustrated in above-described embodiment, not for limitation this patent Shen
Please.Any person skilled in the art can all carry out above-described embodiment under the spirit and scope without prejudice to present patent application
Modifications and changes.Therefore, such as those of ordinary skill in the art without departing from the revealed essence of present patent application
All equivalent modifications or change completed under mind and technical idea, the claim that should be asked by this patent are covered.
Claims (5)
1. a kind of curing method of semiconductor, which is characterized in that comprise the steps of:
(1) frivolous or soft sample is placed on transparency glass plate;
(2) one side to be protected will be needed close to solidification plate;
(3) it is coated with a small amount of curing agent in the product one side opposite with glass plate, is placed on baking-curing on warm table.
2. a kind of curing method of semiconductor according to claim 1, it is characterised in that: it is described can when sample is intractable
It uses a solidification plate pressed again not to be coated with the another side of curing agent in product, is then placed on warm table and toasts, it will
Two sides all solidifies.
3. a kind of curing method of semiconductor according to claim 2, it is characterised in that: the solidification plate is glass
Plate.
4. a kind of curing method of semiconductor according to claim 2, it is characterised in that: the cured temperature is 220
℃。
5. a kind of curing method of semiconductor according to claim 2, it is characterised in that: the size for solidifying plate is omited
Greater than the size of product.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201711383262.0A CN109950172A (en) | 2017-12-20 | 2017-12-20 | Semiconductor curing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201711383262.0A CN109950172A (en) | 2017-12-20 | 2017-12-20 | Semiconductor curing method |
Publications (1)
Publication Number | Publication Date |
---|---|
CN109950172A true CN109950172A (en) | 2019-06-28 |
Family
ID=67005201
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201711383262.0A Pending CN109950172A (en) | 2017-12-20 | 2017-12-20 | Semiconductor curing method |
Country Status (1)
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CN (1) | CN109950172A (en) |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1217576A (en) * | 1997-11-19 | 1999-05-26 | 松下电器产业株式会社 | Circuit-board flattening method and method for producing semiconductor device |
CN1577781A (en) * | 2003-07-28 | 2005-02-09 | 三洋电机株式会社 | Semiconductor device and manufacturing method of the same |
JP2009212439A (en) * | 2008-03-06 | 2009-09-17 | Fuji Electric Device Technology Co Ltd | Method of manufacturing semiconductor device and semiconductor manufacturing apparatus |
US20090297867A1 (en) * | 2008-06-03 | 2009-12-03 | Sumco Corporation | Semiconductor thin film-attached substrate and production method thereof |
JP2014204044A (en) * | 2013-04-08 | 2014-10-27 | 株式会社ディスコ | Method of processing wafer |
US20160141268A1 (en) * | 2014-11-19 | 2016-05-19 | Shin-Etsu Chemical Co., Ltd. | Method for manufacturing semiconductor apparatus and semiconductor apparatus |
JP2017220622A (en) * | 2016-06-10 | 2017-12-14 | セントラル硝子株式会社 | Processing method of semiconductor wafer |
-
2017
- 2017-12-20 CN CN201711383262.0A patent/CN109950172A/en active Pending
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1217576A (en) * | 1997-11-19 | 1999-05-26 | 松下电器产业株式会社 | Circuit-board flattening method and method for producing semiconductor device |
CN1577781A (en) * | 2003-07-28 | 2005-02-09 | 三洋电机株式会社 | Semiconductor device and manufacturing method of the same |
JP2009212439A (en) * | 2008-03-06 | 2009-09-17 | Fuji Electric Device Technology Co Ltd | Method of manufacturing semiconductor device and semiconductor manufacturing apparatus |
US20090297867A1 (en) * | 2008-06-03 | 2009-12-03 | Sumco Corporation | Semiconductor thin film-attached substrate and production method thereof |
JP2014204044A (en) * | 2013-04-08 | 2014-10-27 | 株式会社ディスコ | Method of processing wafer |
US20160141268A1 (en) * | 2014-11-19 | 2016-05-19 | Shin-Etsu Chemical Co., Ltd. | Method for manufacturing semiconductor apparatus and semiconductor apparatus |
JP2017220622A (en) * | 2016-06-10 | 2017-12-14 | セントラル硝子株式会社 | Processing method of semiconductor wafer |
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PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
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RJ01 | Rejection of invention patent application after publication |
Application publication date: 20190628 |
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RJ01 | Rejection of invention patent application after publication |