[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

CN109950172A - Semiconductor curing method - Google Patents

Semiconductor curing method Download PDF

Info

Publication number
CN109950172A
CN109950172A CN201711383262.0A CN201711383262A CN109950172A CN 109950172 A CN109950172 A CN 109950172A CN 201711383262 A CN201711383262 A CN 201711383262A CN 109950172 A CN109950172 A CN 109950172A
Authority
CN
China
Prior art keywords
curing
plate
product
curing method
glass plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201711383262.0A
Other languages
Chinese (zh)
Inventor
汤剑波
张伟
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitech Semiconductor Wuxi Co Ltd
Original Assignee
Hitech Semiconductor Wuxi Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitech Semiconductor Wuxi Co Ltd filed Critical Hitech Semiconductor Wuxi Co Ltd
Priority to CN201711383262.0A priority Critical patent/CN109950172A/en
Publication of CN109950172A publication Critical patent/CN109950172A/en
Pending legal-status Critical Current

Links

Landscapes

  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)

Abstract

The invention provides a semiconductor curing method, which comprises the following steps of placing a light and thin or soft sample on a transparent glass plate; adhering one surface to be protected to a curing flat plate; and coating a small amount of curing agent on one surface of the product opposite to the glass plate, and placing the product on a heating table for baking and curing. The invention has simple structure, avoids the phenomena of warping and twisting, can protect the sample and reduce the stress in the cutting process.

Description

A kind of curing method of semiconductor
Technical field
The invention mainly relates to semiconductor field more particularly to a kind of curing methods of semiconductor.
Background technique
Existing curing method: being to be mixed into liquid using curing agent and solidification powder being placed in grinding tool after sample sections Mold is poured into, solidifies demoulding after a period of time.
Have the following problems a little: too soft or too thin sample is sliced clamping timing and is easy for deforming, influences subsequent point Analysis, it is higher to the requirement for horizontality of subsequent incision if laying flat on one's back solidification, it is relatively time-consuming.
Chinese invention patent is disclosed, patent name: application number CN200810096293.2 reduces the heat of encapsulation angularity Processing method, the applying date: 20080508, it discloses a kind of heat treatment methods comprising provides a lead frame type semiconductor package It fills semi-finished product and imports a heating means.Lead frame type semiconductor packaging semi-finished product includes a lead frame and an adhesive body.It leads Coil holder includes multiple encapsulation units, and adhesive body coats these encapsulation units.Heating means are equipped with a merging temperature and one Peak temperature.The temperature of lead frame type semiconductor packaging semi-finished product is by merging temperature through the thermal response time and to reach to peak value temperature Degree, and the deformation quantity of lead frame type semiconductor packaging semi-finished product is made to reduce or be released the stress between lead frame and adhesive body To reduce angularity, wherein peak temperature is set between 190 degree~260 degree.
Summary of the invention
In view of the above drawbacks of the prior art, the present invention provides a kind of curing method of semiconductor, and solution is as follows, by Following steps composition:
(1) frivolous or soft sample is placed on transparency glass plate;
(2) one side to be protected will be needed close to solidification plate;
(3) it is coated with a small amount of curing agent in the product one side opposite with glass plate, is placed on warm table and toasts admittedly Change.
Preferably, a solidification plate can be used again in the another side that product is not coated with curing agent when sample is intractable It is pressed, it is then placed on warm table and toasts, two sides is all solidified.
Preferably, solidification plate is glass plate.
Preferably, cured temperature is 220 DEG C.
Preferably, the size for solidifying plate is slightly larger than the size of product.
The phenomenon that beneficial effects of the present invention: avoiding warpage, distortion occurs, and can protect sample, reduces incision process In stress.
Specific embodiment
The present invention includes:
(1) frivolous or soft sample is placed on transparency glass plate;
(2) one side to be protected will be needed close to solidification plate, can be played a protective role;
(3) it is coated with a small amount of curing agent in the product one side opposite with glass plate, is placed on warm table and toasts admittedly Change.
It is preferred in this embodiment, when sample is intractable one can be used again in the another side that product is not coated with curing agent A solidification plate is pressed, is then placed on warm table and toasts, and two sides is all solidified.
Preferred in this embodiment, solidification plate is glass plate;And the size for solidifying plate is mating with product size;Choosing The transparency of glass plate is high, it can be seen that the position of incision, will not be easy to break, and it otherwise will lead to injury to personnel.
It is preferred in this embodiment, it is preferred that cured temperature is 220 DEG C.
It is preferred in this embodiment, it is preferred that the size for solidifying plate is slightly larger than the size of product.
In use, by the curing agent of liquid being become the plate and a kind of liquid curing-agent of a solid, in this way may be used Very thin or very soft sample is sticked on plate, warpage is prevented, then the generation of distortion is solidified using curing agent, Both warpage is avoided, the phenomenon that distortion occurs, and can protect sample, reduces the stress during cutting.
The principles and effects of present patent application are only illustrated in above-described embodiment, not for limitation this patent Shen Please.Any person skilled in the art can all carry out above-described embodiment under the spirit and scope without prejudice to present patent application Modifications and changes.Therefore, such as those of ordinary skill in the art without departing from the revealed essence of present patent application All equivalent modifications or change completed under mind and technical idea, the claim that should be asked by this patent are covered.

Claims (5)

1. a kind of curing method of semiconductor, which is characterized in that comprise the steps of:
(1) frivolous or soft sample is placed on transparency glass plate;
(2) one side to be protected will be needed close to solidification plate;
(3) it is coated with a small amount of curing agent in the product one side opposite with glass plate, is placed on baking-curing on warm table.
2. a kind of curing method of semiconductor according to claim 1, it is characterised in that: it is described can when sample is intractable It uses a solidification plate pressed again not to be coated with the another side of curing agent in product, is then placed on warm table and toasts, it will Two sides all solidifies.
3. a kind of curing method of semiconductor according to claim 2, it is characterised in that: the solidification plate is glass Plate.
4. a kind of curing method of semiconductor according to claim 2, it is characterised in that: the cured temperature is 220 ℃。
5. a kind of curing method of semiconductor according to claim 2, it is characterised in that: the size for solidifying plate is omited Greater than the size of product.
CN201711383262.0A 2017-12-20 2017-12-20 Semiconductor curing method Pending CN109950172A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201711383262.0A CN109950172A (en) 2017-12-20 2017-12-20 Semiconductor curing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201711383262.0A CN109950172A (en) 2017-12-20 2017-12-20 Semiconductor curing method

Publications (1)

Publication Number Publication Date
CN109950172A true CN109950172A (en) 2019-06-28

Family

ID=67005201

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201711383262.0A Pending CN109950172A (en) 2017-12-20 2017-12-20 Semiconductor curing method

Country Status (1)

Country Link
CN (1) CN109950172A (en)

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1217576A (en) * 1997-11-19 1999-05-26 松下电器产业株式会社 Circuit-board flattening method and method for producing semiconductor device
CN1577781A (en) * 2003-07-28 2005-02-09 三洋电机株式会社 Semiconductor device and manufacturing method of the same
JP2009212439A (en) * 2008-03-06 2009-09-17 Fuji Electric Device Technology Co Ltd Method of manufacturing semiconductor device and semiconductor manufacturing apparatus
US20090297867A1 (en) * 2008-06-03 2009-12-03 Sumco Corporation Semiconductor thin film-attached substrate and production method thereof
JP2014204044A (en) * 2013-04-08 2014-10-27 株式会社ディスコ Method of processing wafer
US20160141268A1 (en) * 2014-11-19 2016-05-19 Shin-Etsu Chemical Co., Ltd. Method for manufacturing semiconductor apparatus and semiconductor apparatus
JP2017220622A (en) * 2016-06-10 2017-12-14 セントラル硝子株式会社 Processing method of semiconductor wafer

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1217576A (en) * 1997-11-19 1999-05-26 松下电器产业株式会社 Circuit-board flattening method and method for producing semiconductor device
CN1577781A (en) * 2003-07-28 2005-02-09 三洋电机株式会社 Semiconductor device and manufacturing method of the same
JP2009212439A (en) * 2008-03-06 2009-09-17 Fuji Electric Device Technology Co Ltd Method of manufacturing semiconductor device and semiconductor manufacturing apparatus
US20090297867A1 (en) * 2008-06-03 2009-12-03 Sumco Corporation Semiconductor thin film-attached substrate and production method thereof
JP2014204044A (en) * 2013-04-08 2014-10-27 株式会社ディスコ Method of processing wafer
US20160141268A1 (en) * 2014-11-19 2016-05-19 Shin-Etsu Chemical Co., Ltd. Method for manufacturing semiconductor apparatus and semiconductor apparatus
JP2017220622A (en) * 2016-06-10 2017-12-14 セントラル硝子株式会社 Processing method of semiconductor wafer

Similar Documents

Publication Publication Date Title
CN104039087B (en) Organic silica gel die-free encapsulation method for circuit board assembly
CN102061474B (en) Super-thickness chemical thinning method for semiconductor wafer
CN108559425B (en) Solvent-free adhesive for preventing warping of FDM printing device, printing platform and manufacturing method of solvent-free adhesive
JPS62119139A (en) Paste for bonding semiconductor
CN109950172A (en) Semiconductor curing method
CN104910853A (en) UV rapidly curable warm water fast hydrolyzed glue and preparation method thereof
CN114643651B (en) Silicon carbide wafer waxing method and auxiliary waxing device
CN106571419A (en) Method for manufacturing flashlight
JP5764629B2 (en) Manufacturing method of sheet resin
CN105489511B (en) Mark the preparation method and mold of diameter BGA package metal soldered ball
CN105965710B (en) A kind of preparation method and application of silicon rod gold steel wire cutting resin plate
CN107473605B (en) Manufacturing method and application of honeycomb blind hole toughened glass
CN106003763B (en) The processing method of one anti-deformation TAC eyeglass
CN109514973A (en) A kind of applying method of the 3D tempered glass protective film for display screen
CN109994390A (en) A kind of pre-packaged method of chip
CN105537062A (en) Adjustable glue pot type precise glue point blocking method
CN104891787B (en) The molding machine and forming method of optical glass
JP6283611B2 (en) Glass molded article and method for producing the same, optical element blank, optical element and method for producing the same
CN113752740A (en) Preparation method of cold enamel product
CN208357189U (en) A kind of bonding wafer and roasting glue device
JP2011212344A (en) Method for producing ornament, and ornament
CN104741331A (en) Dust-free cotton swab and manufacturing method thereof
CN111923306A (en) Manufacturing method of optical fairing polishing die
JPS5936821B2 (en) Silicon wafer manufacturing method
CN110867506B (en) Application of film remover

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
RJ01 Rejection of invention patent application after publication

Application publication date: 20190628

RJ01 Rejection of invention patent application after publication