CN109957203B - 树脂组合物、预浸料、与铜箔基板 - Google Patents
树脂组合物、预浸料、与铜箔基板 Download PDFInfo
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- CN109957203B CN109957203B CN201711474481.XA CN201711474481A CN109957203B CN 109957203 B CN109957203 B CN 109957203B CN 201711474481 A CN201711474481 A CN 201711474481A CN 109957203 B CN109957203 B CN 109957203B
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- 239000011342 resin composition Substances 0.000 title claims abstract description 41
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- 239000000758 substrate Substances 0.000 title claims description 34
- 239000011889 copper foil Substances 0.000 title claims description 29
- -1 prepreg Substances 0.000 title description 5
- 239000011347 resin Substances 0.000 claims abstract description 41
- 229920005989 resin Polymers 0.000 claims abstract description 41
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- 239000011256 inorganic filler Substances 0.000 claims abstract description 27
- 229910003475 inorganic filler Inorganic materials 0.000 claims abstract description 27
- 125000006267 biphenyl group Chemical group 0.000 claims abstract description 23
- 239000004848 polyfunctional curative Substances 0.000 claims abstract description 19
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910052582 BN Inorganic materials 0.000 claims abstract description 7
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims abstract description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 7
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims abstract description 5
- 229910052742 iron Inorganic materials 0.000 claims abstract description 5
- JMANVNJQNLATNU-UHFFFAOYSA-N oxalonitrile Chemical compound N#CC#N JMANVNJQNLATNU-UHFFFAOYSA-N 0.000 claims abstract description 5
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims abstract description 5
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- SZGZILRQIYNODJ-UHFFFAOYSA-L disodium;7,12-dihydroquinoxalino[3,2-b]phenazine-2,9-disulfonate Chemical compound [Na+].[Na+].[O-]S(=O)(=O)C1=CC=C2N=C(C=C3C(NC4=CC=C(C=C4N3)S(=O)(=O)[O-])=C3)C3=NC2=C1 SZGZILRQIYNODJ-UHFFFAOYSA-L 0.000 description 5
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- VJJZJBUCDWKPLC-UHFFFAOYSA-N 3-methoxyapigenin Chemical compound O1C2=CC(O)=CC(O)=C2C(=O)C(OC)=C1C1=CC=C(O)C=C1 VJJZJBUCDWKPLC-UHFFFAOYSA-N 0.000 description 2
- YBRVSVVVWCFQMG-UHFFFAOYSA-N 4,4'-diaminodiphenylmethane Chemical compound C1=CC(N)=CC=C1CC1=CC=C(N)C=C1 YBRVSVVVWCFQMG-UHFFFAOYSA-N 0.000 description 2
- OSDWBNJEKMUWAV-UHFFFAOYSA-N Allyl chloride Chemical compound ClCC=C OSDWBNJEKMUWAV-UHFFFAOYSA-N 0.000 description 2
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- AFCARXCZXQIEQB-UHFFFAOYSA-N N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CCNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 AFCARXCZXQIEQB-UHFFFAOYSA-N 0.000 description 2
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- 229910000027 potassium carbonate Inorganic materials 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
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- KUBDPQJOLOUJRM-UHFFFAOYSA-N 2-(chloromethyl)oxirane;4-[2-(4-hydroxyphenyl)propan-2-yl]phenol Chemical compound ClCC1CO1.C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 KUBDPQJOLOUJRM-UHFFFAOYSA-N 0.000 description 1
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- JLBSVDZUWJLOCF-GTWSWNCMSA-N DDM-838 Chemical compound C1CCCNC(=O)C1NC(=O)CC(C)OC(=O)C(CCCCNC(=O)\C=C/CCCCCCCCCCCCCCCCC)NC(=O)C(N=1)(C)COC=1C1=CC=CC=C1O JLBSVDZUWJLOCF-GTWSWNCMSA-N 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
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- HFBMWMNUJJDEQZ-UHFFFAOYSA-N acryloyl chloride Chemical compound ClC(=O)C=C HFBMWMNUJJDEQZ-UHFFFAOYSA-N 0.000 description 1
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- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
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Classifications
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Abstract
本发明提供树脂组合物,包括:1.0重量份的(a)具有联苯基的导热树脂;1.0至10.0重量份的(b)聚苯醚;0.001至5.0重量份的(c)硬化剂;以及0.1至3.0重量份的(d)无机填料,其中(d)无机填料为表面改性有含铁氧化物的氮化硼、氮化铝、氮化硅、碳化硅、氧化铝、氮化碳、八面体结构的碳、或上述的组合,且(d)无机填料的形态为片状或针状。
Description
【技术领域】
本公开涉及树脂组合物,更特别地涉及其所用的具有联苯基的导热树脂、聚苯醚、与无机填料。
【背景技术】
云端、互联、及物联网的兴起、4G、5G通讯技术与显示技术提升,光电与半导体等产业所需的电路板与IC载板走向高速化、高密度化、密集化、与积层化,因此未来其特性需求除低介电、高绝缘性外,需兼具低介电损失、与高导热性,以电路板为例,其结构中的铜箔基板(copper clad laminate)的简易结构为铜箔/介电层/铜箔,中间介电层的组合物多为导热性差的树脂、玻纤布、或绝缘纸,导致铜箔基板的导热性差。一般而言,为了增加介电层的导热性,需添加大量的导热粉体。然而上述导热粉体之间的树脂导热差,因此分散于树脂中的导热粉体的导热效果有限。
为解决上述问题,目前亟需新的导热树脂搭配导热粉体,以增加铜箔之间的介电层导热性。
【发明内容】
本发明一实施例提供树脂组合物,包括:1.0重量份的(a)具有联苯基的导热树脂;1.0至10.0重量份的(b)聚苯醚;0.001至5.0重量份的(c)硬化剂: 如SA90系统,硬化剂为DIC 8000-65T(活性酯)/胺类/酚类硬化剂;如SA9000 系统,硬化剂为一般常见的过氧化物/可产生自由基的硬化剂;以及0.1至3.0 重量份的(d)无机填料,其中(d)无机填料为表面改性有含铁氧化物的氮化硼、氮化铝、氮化硅、碳化硅、氧化铝、氮化碳、八面体结构的碳、或上述的组合,且(d)无机填料的形态为片状或针状。
本发明一实施例提供预浸料(prepreg),包括:补强材料,该预浸料是将含浸于上述树脂组合物后经磁场配向与硬化而成。
本发明一实施例提供铜箔基板,包括:上述预浸料,该铜箔基板是由该预浸料与铜箔压合而成。
【具体实施方式】
本发明一实施例提供树脂组合物,包括:(a)具有联苯基的导热树脂、(b) 聚苯醚、(c)硬化剂、与(d)无机填料。以1.0重量份的(a)具有联苯基的导热树脂为基准,(b)聚苯醚的用量介于1.0至10.0重量份之间。若(b)聚苯醚的比例过高,则导热特性较差。若(b)聚苯醚的比例过低,则电性特性(Dk/Df)较差。以1.0重量份的(a)具有联苯基的导热树脂为基准,(c)硬化剂的用量介于 0.001至5.0重量份之间。若(c)硬化剂的比例过高,则交联程度不足,造成基板物性不佳。若(c)硬化剂的比例过低,则硬化不足,造成基板加工性不佳。以1.0重量份的(a)具有联苯基的导热树脂为基准,(d)无机填料的用量介于0.1 至3.0重量份之间。若(d)无机填料的比例过高,则基板拉力变差且容易爆板。若(d)无机填料的比例过低,则导热特性不佳。
上述(d)无机填料为表面改性有含铁氧化物的氮化硼、氮化铝、氮化硅、碳化硅、氧化铝、氮化碳、八面体结构的碳、或上述的组合,且(d)无机填料的形态为片状或针状。在一实施例中,(d)无机填料的制备方法可参考中国台湾专利I588251。在另一实施例中,为了增加(d)无机填料与树脂组合物中其他的有机材料的间的兼容性,可将0.01%至10%重量份的耦合剂(以1.0重量份的 (a)具有联苯基的导热树脂为基准)加入树脂组合物中。若耦合剂的比例过高,则有基板物性变差的疑虑。在一实施例中,耦合剂可为硅烷、钛酸酯、锆酸酯、或上述的组合。举例来说,硅烷可含胺基(氨基)、环氧基、丙烯酸基、乙烯基、或上述的组合。在另一实施例中,可先将上述耦合剂与无机填料混合,使耦合剂添加(比如接枝)至无机填料,以进一步改善无机填料与树脂组合物中的其他有机材料的间的兼容性。
在一实施例中,(a)具有联苯基的导热树脂的末端具有烯基,其结构如式 1所示:
在式1中,R1为-CH2-、-C(=O)-、或-(CH2)-(C6H5)-,且R2为H或CH3。举例来说,(a)具有联苯基的导热树脂可为式2、式3、或式4所示的结构:
在此实施例中,(b)聚苯醚的末端亦具有烯基,其结构如式5所示:
在式5中,其中Ar为芳香基,每一R3各自为H、CH3、或且R4为m与n为正整数,且m+n=6~300。在一实施例中,(b)聚苯醚的重均分子量介于1000至7000之间。若(b)聚苯醚的重均分子量过高,则树脂的反应基过少且溶解性不佳,导致基板机械性质较差。若(b)聚苯醚的重均分子量过低,则基板特性较脆。
当(a)具有联苯基的导热树脂的末端具有烯基,且(b)聚苯醚的末端具有烯基时,(c)硬化剂包括三烯丙基异氰酸酯(TAIC)、三乙烯胺、三烯丙基氰酸酯(TAC)、或上述的组合。在此实施例中,树脂组合物还包括0.001至0.05重量份的(e)自由基起始剂(以1.0重量份的(a)具有联苯基的导热树脂为基准)。若 (e)自由基起始剂的比例过高,将使树脂组合物交联后的分子量偏低,造成基板物性不佳。若(e)自由基起始剂的比例过低,则硬化不足,造成基板加工性不佳。举例来说,(e)自由基起始剂可为光起始剂、热起始剂、或上述的组合。
在一实施例中,(a)具有联苯基的导热树脂的末端具有环氧基,其结构如式6所示:
在式6中,R7为-(CH2)n-,且n=1-3,且R8为H或CH3。在此实施例中,(b) 聚苯醚的末端可具有羟基,其结构如式7所示。
在式7中,其中Ar为芳香基,每一R3各自为H、CH3、 且R4为m与n为正整数,且m+n=6~300。若(b)聚苯醚的重均分子量过高,则树脂的反应基过少且溶解性不佳,导致基板机械性质较差。若(b)聚苯醚的重均分子量过低,则基板特性较脆。
当(a)具有联苯基的导热树脂的末端具有环氧基,且(b)聚苯醚的末端具有羟基时,(c)硬化剂包括活性酯、多元胺、多元醇、或上述的组合。举例来说,活性酯可为购自DIC的8000-65T、8150-60T、或8100-65T。上述多元胺可具有至少两个胺基,而多元醇可具有至少两个醇基。举例来说,多元胺可为4,4’-二氨基二苯基砜(4,4'-Diamino diphenylsulfone,DDS)、JER-113、或4,4’- 二胺基二苯甲烷(4,4'-亚甲基联苯胺,4,4'-Methylenedianiline,DDM)。多元醇可为乙二醇、丙二醇、或聚乙二醇。
在一实施例中,(a)具有联苯基的导热树脂的末端具有环氧基,其结构如式6所示。(b)聚苯醚的末端具有烯基,其结构如式5所示。如此一来,树脂组合物需进一步包含1.0至10.0重量份的(f)兼容剂,其结构如式8所示:
在式8中,R5为-CH2-或-C(CH3)2-,R6为-(CH2)n-,且n=1-3。若(f)相容剂的比例过高,则树脂/基板的导热性不佳。若(f)兼容剂的比例过低,则(a)具有联苯基的导热树脂与(b)聚苯醚将无法兼容而产生相分离。在此实施例中, (C)硬化剂:如SA90系统(聚苯醚的末端具有羟基),硬化剂为DIC 8000-65T(酯类)/胺类/酚类硬化剂;如SA9000系统(聚苯醚的末端具有烯基),硬化剂为一般常见自由基起始剂(如过氧化物);或上述的组合。在一实施例中,可将补强材料含浸于上述的树脂组合物中,接着以磁场配向树脂组合物后,再硬化树脂组合物以形成预浸料。在一实施例中,补强材料包括玻璃、陶瓷、碳材、树脂、或上述的组合,且补强材料的形状为纤维、粉体、片状物、编织物、或上述的组合。举例来说,补强材料可为玻纤布。在一实施例中,可将玻纤布含浸于树脂组合物中(A阶段,A-stage),接着含浸于树脂混合物中玻纤布,通过0.1 Tesla至10 Tesla的外加磁场系统,以磁场配向(d)无机填料,且外加磁场方向垂直于玻纤布的表面方向。在一实施例中,磁场配向的时间介于0.01秒至300秒之间。当外加磁场的强度越强,则磁场配向的时间越短,反之亦然。然而外加磁场过高的设备成本将大幅提升,而外加磁场过低则会大幅增加磁场配向的时间。接着将磁场配向后的玻纤布置入50.0℃至500.0℃的烘箱,以硬化树脂组合物以形成预浸料(B阶段,B-stage)。经上述磁场配向与硬化后产生的预浸料,具有热传导性高、介电常数低、以及介电损失低等特性,适用于铜箔基板。在一实施例中,可将上述预浸料与铜箔压合成铜箔基板。举例来说,可取多个预浸料夹设于两片铜箔之间,接着热压合上述堆栈结构以形成铜箔基板。上述铜箔基板在耐焊锡强度测试后,未发现爆板现象。
为了让本公开的上述和其他目的、特征、和优点能更明显易懂,下文特举数个实施例配合所附图示,作详细说明如下:
实施例
合成例1
取40.0g的4,4'-双(2,3,6-三甲基酚)(4,4'-Bi(2,3,6-trimethyl phenol),TMP-BP,购自三菱化学株式会社)及33.9 g的烯丙基氯(Allyl chloride,购自景明化工),加入40.0 g的二甲基亚砜(Dimethyl sulfoxide,DMSO)中,再加入微量的四正丁基铵盐(Tetra-n-butyl ammonium,购自景明化工)及氢氧化钠,加热至80℃后反应3小时。待完全反应后将温度降至室温,经过滤纯化得到产物。上述产物如下式:
上式产物的光谱如下:1H NMR(500MHz,CDCl3):δ6.69(s,2H), 6.12~6.04(m,2H),5.39(d,J=17.5Hz,2H),5.20(d,J=10.5Hz,2H),4.25(d, J=5.5Hz,4H),2.18(s,6H),2.16(s,6H),1.83(s,6H)。
合成例2
取40.0 g的TMP-BP及40.2 g的丙烯酰氯(Acryloyl chloride,购自景明化工),置入100.0 g的四氢呋喃中,再加入微量的三乙胺(triethylamine,购自景明化工)及氢氧化钠,于-30℃以下进行反应,且持续搅拌直至温度达室温以上。待完全反应后,经过滤纯化得到产物。上述产物如下式:
上式产物的光谱如下:1H NMR(500MHz,CDCl3):δ6.85(s,2H),6.66(d, J=17.5Hz,2H),6.40(dd,J=17.5Hz,J=10.5Hz,2H),6.05(d,J=10.5Hz,2H),2.12 (s,6H),2.10(s,6H),1.94(s,6H)。
合成例3
取40.0 g的TMP-BP及67.8 g的4-乙烯基苄基氯(4-vinyl benzyl chloride,购自景明化工),置入200.0 g的甲乙酮(Methyl Ethyl Ketone,MEK)溶剂中,再加入微量的四正丁基铵盐(tetra-n-butylammonium)及碳酸钾(Potassium carbonate),于90℃以下反应约4小时,待完全反应后,将温度降至室温,经过滤纯化后得产物。上述产物如下式:
上式产物的光谱如下:1H NMR(500MHz,CDCl3):δ7.49~7.45(m,8H), 6.81(s,2H),6.75(dd,J=17.5Hz,J=17.5Hz,2H),5.78(d,J=17.5Hz,2H),5.27(d, J=11Hz,2H),4.83(s,4H),2.30(s,6H),2.28(s,6H),1.94(s,6H)。
合成例4
依中国台湾专利I588251的实施例24,制备磁性导热材料,其组成为氮化硼粉体上部分披覆含铁氧化物。
合成例5
取10.0 g的合成例4制备的磁性导热材料与0.05 g的硅烷(购自DOW CORNING的Z6011)加入250.0 mL水溶液中,混合后形成含有硅烷的磁性导热材料。
实施例1-1
取10.0 g(1.0重量份)的合成例1的产物作为具有联苯基的导热树脂、5.0 g(0.5重量份)的末端具有烯基的聚苯醚(SA9000,购自Sabic,其结构如式5,其中m+n=6~300)、5.2 g(0.52重量份)的三烯丙基异氰酸酯作为硬化剂、0.08 g (0.008重量份)的自由基起始剂101(购自Aldrich)、以及11.4 g(1.14重量份)的合成例4的磁性导热材料,加入50.0mL共溶剂(甲苯/丙二醇甲醚/丁酮, v/v/v=6/2/2)后混合均匀,以形成树脂组合物。
将玻纤布(购自ASAHI KASEI Co.,L-glass style 106)含浸至上述树脂组合物中,接着将含有上述树脂组合物的玻纤布(A阶段,A-stage),通过0.5 Tesla 的外加磁场系统以磁场配向磁性导热材料,外加磁场方向垂直于玻纤布的表面方向,且磁场配向的时间为30秒。接着将磁场配向后的玻纤布置入170.0 ℃的烘箱,硬化树脂组合物以形成预浸料(B阶段,B-stage)。上述预浸料的厚度为0.08 mm,导热系数为0.82 W/mK(测量标准为ASTM-D5470),介电常数为3.47@10GHz,而介电损失为0.0059@10GHz(测量标准为JIS C2565)。
取6片上述预浸料迭合后,夹置于两片铜箔之间。接着以170℃~210℃热压合上述迭层结构,以形成铜箔基板。上述铜箔基板经耐焊锡强度测试(340 ℃,10秒)后,未发现爆板现象。
实施例1-2
实施例1-2与实施例1-1类似,差别在于实施例1-2将合成例1的产物置换为合成例2的产物。其他组成与比例、后续形成预浸料与铜箔基板的步骤,以及预浸料与铜箔基板的性质测量方法与实施例1-1类似,在此不再重述。上述预浸料的厚度为0.08 mm,导热系数为0.81 W/mK(测量标准为 ASTM-D5470),介电常数为3.50@10GHz,而介电损失为0.0061@10GHz(测量标准为JIS C2565)。上述铜箔基板经耐焊锡强度测试后,未发现爆板现象。
实施例1-3
实施例1-3与实施例1-1类似,差别在于实施例1-3将合成例1的产物置换为合成例3的产物。其他组成与比例、后续形成预浸料与铜箔基板的步骤,以及预浸料与铜箔基板的性质测量方法与实施例1-1类似,在此不再重述。上述预浸料的厚度为0.08 mm,导热系数为0.84 W/mK(测量标准为 ASTM-D5470),介电常数为3.45@10GHz,而介电损失为0.0059@10GHz(测量标准为JIS C2565)。上述铜箔基板经耐焊锡强度测试后,未发现爆板现象。
实施例1-4
取28.0 g(1.0重量份)的末端具有烯基的聚苯醚(SA9000,购自Sabic,其结构如式5,其中m+n=6~300)、12.0 g(0.43重量份)的三烯丙基异氰酸酯作为硬化剂、0.5 g(0.017重量份)的自由基起始剂101(购自Aldrich)、以及8.0 g (0.29重量份)的合成例4的磁性导热材料,加入14.5 g(0.52重量份)氧化硅 Megasil 525(购自硅比科),加入40.0 mL的共溶剂(甲苯/二甲苯,v/v=6/4)后混合均匀,以形成树脂组合物。
后续形成预浸料与铜箔基板的步骤,以及预浸料与铜箔基板的性质测量方法与实施例1-1类似,在此不再重述。上述预浸料的厚度为0.08 mm,导热系数为0.635 W/mK(测量标准为ASTM-D5470),介电常数为3.06@10GHz,而介电损失为0.0034@10GHz(测量标准为JISC2565)。上述铜箔基板经耐焊锡强度测试后,未发现爆板现象。
实施例2
取17.0 g(1.0重量份)的具有联苯基的导热树脂(YX4000,购自三菱化学株式会社,其结构如式6,其中R7为-CH2-,R8为H)、25.0 g(1.5重量份)的末端具有羟基的聚苯醚(SA90,购自Sabic,其结构如式7,其中m与n为正整数,且m+n=6~300)、25.0 g(1.47重量份)的活性酯8000-65T(购自DIC)作为硬化剂、以及20.0 g(1.2重量份)的合成例4的磁性导热材料,加入15.0 g(0.88重量份)氧化硅Megasil 525(购自硅比科)加入40.0 mL的共溶剂(甲苯/丁酮,v/v=4/6) 后混合均匀,以形成树脂组合物。
后续形成预浸料与铜箔基板的步骤,以及预浸料与铜箔基板的性质测量方法与实施例1-1类似,在此不再重述。上述预浸料的厚度为0.08 mm,导热系数为0.779 W/mK,介电常数为3.40@10GHz,而介电损失为 0.0054@10GHz。上述铜箔基板经耐焊锡强度测试后,未发现爆板现象(> 60min.)且基板拉力为4.63 lb/in(测量标准为IPC-TM-650 2.4.8)。
实施例3
取1500.0 g(1.0重量份)的具有联苯基的导热树脂(YX4000,购自三菱化学株式会社,其结构如式6,其中R7为-CH2-,R8为H)、5000.0 g(3.33重量份) 的末端具有烯基的聚苯醚(SA9000,购自Sabic,其结构如式5所示,其中 m+n=6~300)、1500.0 g(1.0重量份)的氢化环氧树脂YX8000(购自三菱化学株式会社,其结构如式8所示,其中R5为-C(CH3)2-,R6为-CH2-)作为兼容剂、900.0 g(0.6重量份)的多元胺JER-113(购自三菱化学株式会社)作为硬化剂、2100.0 g(1.5重量份)的三烯丙基异氰酸酯作为硬化剂、70.0 g(0.05重量份)的自由基起始剂101、以及6800.0 g(4.6重量份)的合成例5中含有硅烷的磁性导热材料,加入9000.0 mL的共溶剂(甲苯/丙二醇甲醚/丁酮,v/v/v=6/2/2)后混合均匀,以形成树脂组合物。上述多元胺JER-113的结构如式12所示:
(式12)
后续形成预浸料与铜箔基板的步骤,以及预浸料与铜箔基板的性质测量方法与实施例1-1类似,在此不再重述。上述预浸料的厚度为0.08 mm,导热系数为0.942 W/mK,介电常数为3.38@10GHz,而介电损失为 0.0098@10GHz。上述铜箔基板经耐焊锡强度测试后,未发现爆板现象。
比较例1
取10.0 g(1.0重量份)的环氧树脂Epon828(购自长春树脂)、10.7 g(1.07 重量份)的活性酯8000-65T(购自DIC)作为硬化剂、以及11.6 g(1.16重量份) 的合成例4的磁性导热材料,加入50.0 mL的共溶剂(甲苯/丙二醇甲醚/丁酮, v/v/v=6/2/2)后混合均匀,以形成树脂组合物。
后续形成预浸料与铜箔基板的步骤,以及预浸料与铜箔基板的性质测量方法与实施例1-1类似,在此不再重述。上述预浸料的厚度为0.08 mm,导热系数为0.583 W/mK(测量标准为ASTM-D5470),介电常数为4.17@10GHz,而介电损失为0.010@10GHz(测量标准为JISC2565)。上述铜箔基板经耐焊锡强度测试后,未发现爆板现象。由上述可知,磁性导热材料搭配其他一般环氧树脂形成的预浸料,其性质比本公开实施例的树脂混合物形成的预浸料性质差。
比较例2
取28.0 g(1.0重量份)的末端具有烯基的聚苯醚(SA9000,购自Sabic,其结构如式5,其中m+n=6~300)、12.0 g(0.43重量份)的三烯丙基异氰酸酯作为硬化剂、0.5 g(0.017重量份)的自由基起始剂101(购自Aldrich)、以及8.0 g (0.29重量份)的纯氮化硼导热材料(购自Saint-Gobain),加入14.5 g(0.52重量份) 氧化硅Megasil 525(购自硅比科),加入40.0 mL的共溶剂(甲苯/二甲苯,v/v=6/4) 后混合均匀,以形成树脂组合物。
后续形成预浸料与铜箔基板的步骤,以及预浸料与铜箔基板的性质测量方法与实施例1-1类似,在此不再重述。上述预浸料的厚度为0.08 mm,导热系数为0.575 W/mK(测量标准为ASTM-D5470),介电常数为3.07@10GHz,而介电损失为0.0043@10GHz(测量标准为JISC2565)。上述铜箔基板经耐焊锡强度测试后,未发现爆板现象。由上述可知,聚苯醚树脂搭配不含耦合剂的磁性导热粉体形成预浸料,其性质比本公开实施例1-4的树脂混合物形成的预浸料性质差。
比较例3
取17.0 g(1.0重量份)的具有联苯基的导热树脂(YX4000,购自三菱化学株式会社,其结构如式6,其中R7为-CH2-,R8为H)、25.0 g(1.5重量份)的末端具有羟基的聚苯醚(SA90,购自Sabic,其结构如式7,其中m与n为正整数,且m+n=6~300)、25.0 g(1.47重量份)的活性酯8000-65T(购自DIC)作为硬化剂、以及32.2 g(1.89重量份)的合成例4的磁性导热材料,加入12.9 g(0.76重量份)氧化硅Megasil 525(购自硅比科),加入40.0 mL的共溶剂(甲苯/丁酮, v/v=4/6)后混合均匀,以形成树脂组合物。
后续形成预浸料与铜箔基板的步骤,以及预浸料与铜箔基板的性质测量方法与实施例2类似,在此不再重述。上述预浸料的厚度为0.08 mm,导热系数为1.013 W/mK,介电常数为3.465@10GHz,而介电损失为0.0062@10GHz。上述铜箔基板经耐焊锡强度测试后,发现有爆板现象(<10sec(秒))且基板拉力为3.37 lb/in。由上述可知,聚苯醚树脂及导热树脂,搭配磁性导热粉体的比例过高时,所形成的预浸料的性质比本公开实施例2的树脂混合物形成的预浸料性质差。
虽然本公开已以数个实施例披露如上,然其并非用以限定本公开,任何本技术领域的技术人员在不脱离本公开的精神和范围内,应可作任意的更动与润饰,因此本公开的保护范围应视所附权利要求书所界定的范围为准。
Claims (14)
3.如权利要求1所述的树脂组合物,其中(c)硬化剂包括三烯丙基异氰酸酯、三乙烯胺、三烯丙基氰酸酯、或上述的组合。
4.如权利要求1所述的树脂组合物,还包括0.001至0.05重量份的(e)自由基起始剂。
5.如权利要求1所述的树脂组合物,还包括0.01%至10.0%重量份的耦合剂。
6.如权利要求5所述的树脂组合物,其中该耦合剂添加至(d)无机填料上。
7.一种树脂组合物,包括:
1.0重量份的(a)具有联苯基的导热树脂;
1.0至10.0重量份的(b)聚苯醚;
0.001至5.0重量份的(c)硬化剂;
0.1至3.0重量份的(d)无机填料;和
1.0至10.0重量份的(f)兼容剂,
其中(d)无机填料为表面改性有含铁氧化物的氮化硼、氮化铝、氮化硅、碳化硅、氧化铝、氮化碳、八面体结构的碳、或上述的组合,且(d)无机填料的形态为片状或针状;
其中(a)具有联苯基的导热树脂的末端具有环氧基,其结构为:
其中R7为-(CH2)n-,且n=1-3,以及R8为H或CH3;
其中(f)兼容剂的结构为:
其中R5为-CH2-或-C(CH3)2-,以及R6为-(CH2)n-,且n=1-3;
其中(b)聚苯醚的末端具有烯基,其结构为:
8.如权利要求7所述的树脂组合物,其中(c)硬化剂包括(c1)三烯丙基异氰酸酯、三乙烯胺、三烯丙基氰酸酯、或上述的组合,以及(c2)活性酯、多元胺、多元醇、或上述的组合。
9.如权利要求7所述的树脂组合物,还包括0.001至0.05重量份的(e)自由基起始剂。
10.如权利要求7所述的树脂组合物,还包括0.01%至10.0%重量份的耦合剂。
11.如权利要求10所述的树脂组合物,其中该耦合剂添加至(d)无机填料上。
12.一种预浸料,包括:
补强材料,该预浸料是将该补强材料含浸于权利要求1-11任一项所述的树脂组合物后经磁场配向与硬化而成。
13.如权利要求12所述的预浸料,其中该补强材料包括玻璃、陶瓷、碳材、树脂、或上述的组合,且该补强材料的形状为纤维、粉体、片状物、编织物、或上述的组合。
14.一种铜箔基板,包括权利要求12-13任一项所述的预浸料,该铜箔基板是由该预浸料与铜箔压合而成。
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