CN109920806A - Display module and the touch-control display panel and electronic device for applying it - Google Patents
Display module and the touch-control display panel and electronic device for applying it Download PDFInfo
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- CN109920806A CN109920806A CN201910261962.5A CN201910261962A CN109920806A CN 109920806 A CN109920806 A CN 109920806A CN 201910261962 A CN201910261962 A CN 201910261962A CN 109920806 A CN109920806 A CN 109920806A
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Abstract
A kind of display module a, comprising: substrate, the substrate include viewing area and non-display area, and the non-display area is arranged around the viewing area;One thin film transistor (TFT) array, the thin film transistor (TFT) array include multiple thin film transistor (TFT)s, and the multiple thin film transistor (TFT) is set in the viewing area, and the thin film transistor (TFT) includes grid, source electrode, drain electrode, insulating layer and the first passivation layer;One blocking portion, the blocking portion are set to the non-display area, the blocking portion it is at least partly identical as at least one layer of material in the grid, source electrode, drain electrode, insulating layer or the first passivation layer.The present invention also provides the touch-control display panels and electronic device of the application display module.
Description
Technical field
The present invention relates to a kind of display module and using its touch-control display panel and electronic device.
Background technique
Portable electronic device (such as smart phone) with touch function is very popular in existing market.It is existing
Portable electronic device generally have display area, used in can be LCD or OLED, but no matter it is above-mentioned which kind of display
Technology requires to be packaged, and the upper lower glass plate of viewing area is bonded by traditional encapsulating structure using frame glue, but frame glue
Material it is more single and structure is relatively simple, the entrance of steam can not be effectively prevent, so that viewing area is easy to be invaded by steam
Aging.It is that those skilled in the art need to solve that encapsulating structure, which how to be improved, to avoid steam intrusion.
Summary of the invention
In view of this, the present invention provides a kind of display module, which there is preferable encapsulating structure can effectively keep away
Exempt from aqueous vapor intrusion.
In addition, there is a need to provide a kind of touch-control display panel and electronic device with the display module.
A kind of display module, comprising:
One substrate, the substrate include viewing area and non-display area, and the non-display area is arranged around the viewing area;
One thin film transistor (TFT) array, the thin film transistor (TFT) array include multiple thin film transistor (TFT)s, and the multiple film is brilliant
Body pipe is set in the viewing area, and the thin film transistor (TFT) includes grid, source electrode, drain electrode, insulating layer and the first passivation layer;
One blocking portion, the blocking portion are set to the non-display area, the blocking portion at least partly with the grid,
At least one layer of material in source electrode, drain electrode, insulating layer or the first passivation layer is identical.
In an embodiment, the blocking portion includes the first sub- barrier layer, the first sub- barrier layer and the grid
Material is identical.
In an embodiment, the blocking portion further includes the second sub- barrier layer, the sub- barrier layer of third and the 4th sub- barrier layer,
The second sub- barrier layer is set to the described first sub- barrier layer far from the substrate side, and the sub- barrier layer of third is set to
Far from the described first sub- barrier layer side, the 4th sub- barrier layer is set to third and stops on the second sub- barrier layer
For layer far from the described second sub- barrier layer side, the second sub- barrier layer is identical as the material of the insulating layer, third
Barrier layer is identical as the material of the source electrode and drain electrode, and the 4th sub- barrier layer is identical as the material of the passivation layer.
In an embodiment, the blocking portion further includes the sub- barrier layer of third, the sub- barrier layer of third and the source electrode
And the material of drain electrode is identical.
In an embodiment, the thin film transistor (TFT) array further includes a flatness layer, and the flatness layer is set to described thin
For film transistor array far from the substrate side, the blocking portion further includes the 5th sub- barrier layer, the 5th sub- barrier layer with
The material of the flatness layer is identical.
In an embodiment, the quantity of the blocking portion be it is multiple, the multiple blocking portion is set to the same of the substrate
One surface, the multiple blocking portion are all set in the non-display area.
In an embodiment, the blocking portion further includes a protective layer, and the protective layer is set at least one described resistance
Outermost of the stopper far from the substrate.
In an embodiment, the structure of the multiple blocking portion is not exactly the same.
In an embodiment, the display module further includes cover board and frame glue, and the frame glue is set to the non-display area
And covering the blocking portion at least partly, the cover board passes through the frame glue and the substrate bonding.
In an embodiment, the cover board includes multiple interruptions to the orientation substrate protrusion, and the interruption is set
It is placed between two blocking portions but is not contacted with the substrate.
The present invention also provides a kind of display panel and a kind of electronic device, the display panel and electronic device include above-mentioned
Display module.
Display module of the invention can effectively promote the seal degree of encapsulation by the way that blocking portion is arranged in non-display area.
Detailed description of the invention
Fig. 1 is the stereoscopic schematic diagram of display module of the invention.
Fig. 2 is schematic cross-sectional view of the Fig. 1 along II-II line.
Fig. 3 is the partial schematic sectional view of the non-display area the invention shows mould group in an embodiment.
Fig. 4 is the partial schematic sectional view of the non-display area the invention shows mould group in another embodiment.
Fig. 5 is the partial schematic sectional view of the non-display area the invention shows mould group in another embodiment.
Fig. 6 is the partial schematic sectional view of the non-display area the invention shows mould group in another embodiment.
Fig. 7 is the partial schematic sectional view of the non-display area the invention shows mould group in another embodiment.
Fig. 8 is the partial schematic sectional view of the non-display area the invention shows mould group in another embodiment.
Fig. 9 is the stereoscopic schematic diagram of electronic device of the present invention.
Main element symbol description
The present invention that the following detailed description will be further explained with reference to the above drawings.
Specific embodiment
In order to keep techniques disclosed in this application content more detailed with it is complete, be referred to attached drawing and it is of the invention under
Various specific embodiments are stated, identical label represents same or similar component in attached drawing.However, the ordinary skill of this field
Personnel should be appreciated that embodiment provided hereinafter is not intended to limit the invention covered range.In addition, attached drawing is only
It is drawn for being schematically illustrated, and not according to its full size.
With reference to the accompanying drawings, a specific embodiment of the invention is described in further detail.
As shown in FIG. 1, FIG. 1 is the stereoscopic schematic diagrams of display module 10 of the invention, as shown in Fig. 2, Fig. 2 is Fig. 1 along II-
The schematic cross-sectional view of II line.The display module 10 of first embodiment of the invention includes substrate 11, thin film transistor (TFT) array 12, stops
Portion 13, frame glue 14 and cover board 15.
The substrate 11 is the bearing basement of the display module 10, the thin film transistor (TFT) array 12 of the display module 10
11 1 surface of substrate is set to blocking portion 13.The substrate 11 can be flexible material or non-flexible material, in this reality
It applies in example, the material of the substrate 11 can be organic matter, such as polycarbonate (Polycarbonate, PC), polyimides
(Polyimide, PI), polyethylene naphthalate (Polyethylene naphthalate two formic acid
Glycol ester, PEN), polyethylene terephthalate (polyethylene glycol terephthalate, PET)
And cyclic olefin copolymer (Cyclo-olefin polymer, COP);The material of the substrate 11 may be inorganic matter,
Such as silica (SiO2).It should be understood that the material of substrate 11 can select according to actual needs.
The substrate 11 includes viewing area 111 and non-display area 112, and 111 counterpart substrate 11 of viewing area is provided with film crystalline substance
The middle section on the surface of body pipe array 12 and blocking portion 13 is arranged, and 112 counterpart substrate 11 of non-display area is provided with film crystal
The periphery setting on the surface of pipe array 12 and blocking portion 13, that is, non-display area 112 is arranged around viewing area 111.Thin film transistor (TFT)
Array 12 is set in viewing area 111, and blocking portion 13 is set in non-display area 112.
Thin film transistor (TFT) array 12 includes multiple thin film transistor (TFT)s 120, and thin film transistor (TFT) 120 is set to 11 surface of substrate.
Thin film transistor (TFT) 120 includes grid 121, insulating layer 122, channel layer 123, source electrode 124, the 125, first passivation layer 126 of drain electrode, resistance
Interlayer 127, the second passivation layer 128 and flatness layer 129.Grid 121 is set to 11 surface of substrate, and insulating layer 122 covers grid
121, channel layer 123 is set to insulating layer 122 and is set to insulating layer 122 far far from 121 side of grid, source electrode 124 and drain electrode 125
From 121 surface of grid and cover channel layer 123 at least partly, source electrode 124 is not contacted with drain electrode 125, channel layer 123, source electrode
124 with drain electrode 125 be conductive material, and source electrode 124 is electrically connected by channel layer 123 and drain electrode 125, the first passivation layer 126
Source electrode 124, drain electrode 125 and channel layer 123 are covered not by the part of the surface of 125 covering of source electrode 124 and drain electrode, barrier layer 127
It is set to 11 surface of substrate and covers the exposed surface of the first passivation layer 126, insulating layer 122, the second passivation layer 128 is set to resistance
For interlayer 127 far from 11 side of substrate, flatness layer 129 is set to the second passivation layer 128 far from 127 side of barrier layer.
Multiple thin film transistor (TFT)s 120 can be made together by being etched by light processing procedure, for example, passing through physics gas on 11 surface of substrate
Mutually deposition (PVD) or the mode of chemical vapor deposition (CVD) form layer of material layer, then pass sequentially through exposure, development and
The mode of etching makes the material layer pattern to obtain multiple spaced grids 121, by this method can be in substrate
11 surfaces obtain the grid 121 of multiple thin film transistor (TFT)s 120 simultaneously;Similarly, the insulating layer 122 of multiple thin film transistor (TFT)s 120, logical
Channel layer 123, source electrode 124, the 125, first passivation layer 126 of drain electrode, barrier layer 127, the second passivation layer 128 and flatness layer 129
It can be made together by being etched by light processing procedure respectively.
Blocking portion 13 at least partly with grid 121, source electrode 124, drain electrode 125, insulating layer 122 and the first passivation layer 126
In at least one layer of material it is identical and with along be etched by light processing procedure in complete.Blocking portion 13 can be multilayered structure,
It may include the sub- barrier layer of multilayer laminated setting, the grid on wherein at least one sub- barrier layer and thin film transistor (TFT) 120
121, source electrode 124, the 125, insulating layer 122 that drains are identical at least one layer of material in the first passivation layer 126 and with along with
It completes in photoetch processing procedure.Frame glue 14 is set to non-display area 112 and covers blocking portion 13 at least partly, and cover board 15 is logical
It crosses frame glue 14 and substrate 11 bonds.
As shown in Fig. 2, the quantity of blocking portion 13 is at least one, and frame glue 14 covers blocking portion 13 in an embodiment
Close to 111 side of viewing area, the one end of blocking portion 13 far from viewing area 111 is not covered by frame glue 14.Blocking portion 13 includes multiple
Sub- barrier layer, defining multiple sub- barrier layers is respectively the first sub- barrier layer 131, the second sub- barrier layer 132, the sub- barrier layer of third
133 and the 4th sub- barrier layer 134;First sub- barrier layer 131 is set to 11 surface of substrate, and the second sub- barrier layer 132 is set to
Far from 11 side of substrate, the sub- barrier layer 133 of third is set to the second sub- barrier layer 132 far from the first son on the first sub- barrier layer 131
131 side of barrier layer, the 4th sub- barrier layer 134 are set to the sub- barrier layer 133 of third far from the second sub- 132 side of barrier layer.The
One sub- barrier layer 131 is identical as the material of grid 121 and completes being etched by light in processing procedure with along with, it is possible to understand that, the
One sub- barrier layer 131 is obtained after being etched by light with grid 121 by same layer of material;Second sub- barrier layer 132 and insulating layer 122
Material it is identical and with along be etched by light processing procedure in complete;The sub- barrier layer of third 133 and source electrode 124 and drain electrode 125
Material is identical and completes being etched by light in processing procedure with along with;The material phase on the 4th sub- barrier layer 134 and the first passivation layer 126
With and with along be etched by light processing procedure in complete.
As shown in figure 3, the partial schematic sectional view of the non-display area 112 for display module 10 stops in an embodiment
The quantity in portion 13 is at least two, and frame glue 14 covers two blocking portions 13 one end close to each other, and two blocking portions 13 are mutually remote
From end do not covered by frame glue 14.Two blocking portions 13 include four sub- barrier layers: defining four sub- barrier layer difference
For the first sub- barrier layer 131, the second sub- barrier layer 132, the sub- barrier layer 133 of third and the 4th sub- barrier layer 134;First son resistance
Barrier 131 is set to 11 surface of substrate, and the second sub- barrier layer 132 is set to the first sub- barrier layer 131 far from 11 side of substrate, and
Three sub- barrier layers 133 are set to the second sub- barrier layer 132 far from the first sub- 131 side of barrier layer, and the 4th sub- barrier layer 134 is arranged
In the sub- barrier layer 133 of third far from the second sub- 132 side of barrier layer.First sub- barrier layer 131 it is identical as the material of grid 121 and
It completes being etched by light in processing procedure with along with, it is possible to understand that, the first sub- barrier layer 131 is with grid 121 by same layer material
Layer obtains after being etched by light;Second sub- barrier layer 132 is identical as the material of insulating layer 122 and makes being etched by light in processing procedure with along with
It completes;The sub- barrier layer 133 of third is identical as the material of source electrode 124 and drain electrode 125 and makes being etched by light in processing procedure with along with
It completes;4th sub- barrier layer 134 is identical as the material of the first passivation layer 126 and completes being etched by light in processing procedure with along with;
Blocking portion 13 close to viewing area 111 further includes a protective layer 136, and protective layer 136 is set to the outermost of the blocking portion 13, is prevented
Sheath 136 is identical as the material of barrier layer 127 and completes being etched by light in processing procedure with along with.
As shown in figure 4, the partial schematic sectional view of the non-display area 112 for display module 10, in another embodiment, resistance
The quantity of stopper 13 is at least two, and frame glue 14 covers two blocking portions 13 one end close to each other, and two blocking portions 13 are mutual
Separate end is not covered by frame glue 14.One of blocking portion 13 includes the first sub- barrier layer 131, the second sub- barrier layer
132, the sub- barrier layer 133 of third, the 4th sub- barrier layer 134 and protective layer 136;First sub- barrier layer 131 is set to substrate 11
Surface, the second sub- barrier layer 132 are set to the first sub- barrier layer 131 far from 11 side of substrate, and the sub- barrier layer 133 of third is set to
Far from the first sub- 131 side of barrier layer, it is remote that the 4th sub- barrier layer 134 is set to the sub- barrier layer 133 of third on the second sub- barrier layer 132
From the second sub- 132 side of barrier layer, protective layer 136 is set to the outermost of the blocking portion 13.Another blocking portion 13 includes the
One sub- barrier layer 131 and the sub- barrier layer 133 of third, the first sub- barrier layer 131 are set to 11 surface of substrate, the sub- barrier layer of third
133 are set to the described first sub- barrier layer 131 far from 11 side of substrate.The material on the first sub- barrier layer 131 and grid 121
It is identical and with along be etched by light processing procedure in complete, it is possible to understand that, the first sub- barrier layer 131 is with grid 121 by same
Layer of material obtains after being etched by light;The sub- barrier layer 133 of third is identical as the material of insulating layer 122 and system is being etched by light with along with
It completes in journey;The sub- barrier layer 133 of third is identical as the material of source electrode 124 and drain electrode 125 and processing procedure is being etched by light with along with
In complete;4th sub- barrier layer 134 is identical as the material of the first passivation layer 126 and makes being etched by light in processing procedure with along with
It completes;Protective layer 136 is identical as the material of barrier layer 127 and completes being etched by light in processing procedure with along with.
As shown in figure 5, the partial schematic sectional view of the non-display area 112 for display module 10, in another embodiment, resistance
The quantity of stopper 13 is at least two, and frame glue 14 covers two blocking portions 13 one end close to each other, and two blocking portions 13 are mutual
Separate end is not covered by frame glue 14.One of blocking portion 13 includes the first sub- barrier layer 131, the second sub- barrier layer
132, the sub- barrier layer 133 of third, the 4th sub- barrier layer 134 and protective layer 136;First sub- barrier layer 131 is set to substrate 11
Surface, the second sub- barrier layer 132 are set to the first sub- barrier layer 131 far from 11 side of substrate, and the sub- barrier layer 133 of third is set to
Far from the first sub- 131 side of barrier layer, it is remote that the 4th sub- barrier layer 134 is set to the sub- barrier layer 133 of third on the second sub- barrier layer 132
From the second sub- 132 side of barrier layer, protective layer 136 is set to the outermost of the blocking portion 13.Another blocking portion 13 includes the
One sub- barrier layer 131, the sub- barrier layer 133 of third and the 5th sub- barrier layer 135;First sub- barrier layer 131 is set to substrate 11
Surface, the sub- barrier layer 133 of third are set to the first sub- barrier layer 131 far from 11 side of substrate, and the 5th sub- barrier layer 135 is set to
The sub- barrier layer 133 of third is far from the first sub- 131 side of barrier layer.First sub- barrier layer 131 it is identical as the material of grid 121 and
It is etched by light in processing procedure and completes with along with, it is possible to understand that, the first sub- barrier layer 131 is with grid 121 by same layer of material
It is obtained after being etched by light;Second sub- barrier layer 132 is identical as the material of insulating layer 122 and makes being etched by light in processing procedure with along with
It completes;The sub- barrier layer 133 of third is identical as the material of source electrode 124 and drain electrode 125 and has made being etched by light in processing procedure with along with
At;4th sub- barrier layer 134 is identical as the material of the first passivation layer 126 and completes being etched by light in processing procedure with along with;The
Five sub- barrier layers 135 are identical as the material of flatness layer 129 and complete being etched by light in processing procedure with along with;Protective layer 136 with
The material of barrier layer 127 is identical and completes being etched by light in processing procedure with along with.
As shown in fig. 6, the partial schematic sectional view of the non-display area 112 for display module 10, in another embodiment, resistance
The quantity of stopper 13 is at least two, and frame glue 14 covers two blocking portions 13 one end close to each other, and two blocking portions 13 are mutual
Separate end is not covered by frame glue 14.One of blocking portion 13 includes the first sub- barrier layer 131, the sub- barrier layer of third
133, the 5th sub- barrier layer 135 and protective layer 136;First sub- barrier layer 131 is set to 11 surface of substrate, the sub- barrier layer of third
133 are set to the first sub- barrier layer 131 far from 11 side of substrate, and it is remote that the 5th sub- barrier layer 135 is set to the sub- barrier layer 133 of third
From the first sub- 131 side of barrier layer, protective layer 136 is set to the outermost of the blocking portion 13.Another blocking portion 13 includes the
One sub- barrier layer 131, the sub- barrier layer 133 of third and the 5th sub- barrier layer 135;First sub- barrier layer 131 is set to substrate 11
Surface, the sub- barrier layer 133 of third are set to the first sub- barrier layer 131 far from 11 side of substrate, and the 5th sub- barrier layer 135 is set to
The sub- barrier layer 133 of third is far from the first sub- 131 side of barrier layer.First sub- barrier layer 131 it is identical as the material of grid 121 and
It is etched by light in processing procedure and completes with along with, it is possible to understand that, the first sub- barrier layer 131 is with grid 121 by same layer of material
It is obtained after being etched by light;Second sub- barrier layer 132 is identical as the material of insulating layer 122 and makes being etched by light in processing procedure with along with
It completes;The sub- barrier layer 133 of third is identical as the material of source electrode 124 and drain electrode 125 and has made being etched by light in processing procedure with along with
At;4th sub- barrier layer 134 is identical as the material of the first passivation layer 126 and completes being etched by light in processing procedure with along with;The
Five sub- barrier layers 135 are identical as the material of flatness layer 129 and complete being etched by light in processing procedure with along with;Protective layer 136 with
The material of barrier layer 127 is identical and completes being etched by light in processing procedure with along with.
As shown in fig. 7, the partial schematic sectional view of the non-display area 112 for display module 10, in another embodiment, resistance
The quantity of stopper 13 is at least two, and frame glue 14 covers 111 one end of close viewing area and another blocking of a blocking portion 13
The one end of portion 13 far from viewing area 111, the end that two blocking portions 13 are located remotely from each other are not covered by frame glue 14.Two blocking portions
It include the first sub- barrier layer 131, the second sub- barrier layer 132, the sub- barrier layer 133 of third, the 4th sub- barrier layer 134 and protection
Layer 136;In blocking portion 13 near substrate 11 be arranged sub- barrier layer be the first sub- barrier layer 131, be set to first son stop
Layer 131 is the second sub- barrier layer 132 far from 11 side of substrate, is set to the second sub- barrier layer 132 far from the first sub- barrier layer
131 sides are the sub- barrier layer 133 of third, and being set to the sub- barrier layer 133 of third far from the second sub- 132 side of barrier layer is
Four sub- barrier layers 134, protective layer 136 are set to the outermost of the blocking portion 13.The material on the first sub- barrier layer 131 and grid 121
Expect identical and completes being etched by light in processing procedure with along with, it is possible to understand that, the first sub- barrier layer 131 is with grid 121 by same
Layer of material layer obtains after being etched by light.Second sub- barrier layer 132 is identical as the material of insulating layer 122 and is being etched by light with along with
It completes in processing procedure.The sub- barrier layer 133 of third is identical as the material of source electrode 124 and drain electrode 125 and makes being etched by light with along with
It completes in journey.4th sub- barrier layer 134 is identical as the material of the first passivation layer 126 and makes being etched by light in processing procedure with along with
It completes.Protective layer 136 is identical as the material of barrier layer 127 and completes being etched by light in processing procedure with along with.
As shown in figure 8, the partial schematic sectional view of the non-display area 112 for display module 10, in another embodiment, resistance
The quantity of stopper 13 is at least two, and frame glue 14 covers 111 one end of close viewing area and another blocking of a blocking portion 13
The one end of portion 13 far from viewing area 111, the end that two blocking portions 13 are located remotely from each other are not covered by frame glue 14.Two blocking portions
It include the first sub- barrier layer 131, the second sub- barrier layer 132, the sub- barrier layer 133 of third, the 4th sub- barrier layer 134 and protection
Layer 136;In blocking portion 13 near substrate 11 be arranged sub- barrier layer be the first sub- barrier layer 131, be set to first son stop
Layer 131 is the second sub- barrier layer 132 far from 11 side of substrate, is set to the second sub- barrier layer 132 far from the first sub- barrier layer
131 sides are the sub- barrier layer 133 of third, and being set to the sub- barrier layer 133 of third far from the second sub- 132 side of barrier layer is
Four sub- barrier layers 134, protective layer 136 are set to the outermost of the blocking portion 13.The material on the first sub- barrier layer 131 and grid 121
Expect identical and completes being etched by light in processing procedure with along with, it is possible to understand that, the first sub- barrier layer 131 is with grid 121 by same
Layer of material layer obtains after being etched by light.Second sub- barrier layer 132 is identical as the material of insulating layer 122 and is being etched by light with along with
It completes in processing procedure.The sub- barrier layer 133 of third is identical as the material of source electrode 124 and drain electrode 125 and makes being etched by light with along with
It completes in journey.4th sub- barrier layer 134 is identical as the material of the first passivation layer 126 and makes being etched by light in processing procedure with along with
It completes.Protective layer 136 is identical as the material of barrier layer 127 and completes being etched by light in processing procedure with along with.Cover board 15 is also
Including interruption 151, interruption 151 extends from cover board 15 to 11 direction of substrate but does not contact with substrate 11, and interruption 151 is arranged
It is contacted between two blocking portions 13 and not with any one blocking portion 13.
The quantity of blocking portion 13 can be to be multiple, and the structure of each blocking portion 13 is not exactly the same.Blocking portion 13 is multilayer
Structure, include at least two layers, grid 121, source electrode 124, drain electrode 125 and flatness layer 129 can be metal material, insulating layer 122,
First passivation layer 126 and barrier layer 127 can be organic material, and blocking portion 13 can be the mixing of metal material and organic material
Object, the mixed structure have more preferable leakproofness compared to traditional single layer frame glue 14, and the packaging mechanism of display module 10 can have
Effect prevents steam from invading.And the sub- barrier layer of blocking portion 13 is identical as the material of unit in thin film transistor (TFT) 120, blocking portion
13 can complete in identical photoetch processing procedure with thin film transistor (TFT) 120, that is, in the process of production thin film transistor (TFT) 120
The middle range for changing etching retains some materials to form blocking portion 13, without opening up additional processing procedure in non-display area 112.
The present invention also provides a kind of electronic device 1, which includes main body 20 and the display that is set in main body 20
Panel 30, for display panel 30 for showing picture, display panel 30 includes at least display module 10, and the display module 10 can be with
For display module described in above-described embodiment.In Fig. 9 only by taking electronic device 1 is mobile phone as an example, in other embodiments, the electronics
Device 1 can also be personal computer, tablet computer, intelligent appliance etc..
Above, a specific embodiment of the invention is described with reference to the accompanying drawings.But those skilled in the art
It is understood that without departing from the spirit and scope of the present invention, can also make to a specific embodiment of the invention each
Kind change and replacement.These changes and replacement are all fallen within the scope of the invention as defined in the claims.
Claims (12)
1. a kind of display module characterized by comprising
One substrate, the substrate include viewing area and non-display area, and the non-display area is arranged around the viewing area;
One thin film transistor (TFT) array, the thin film transistor (TFT) array include multiple thin film transistor (TFT)s, the multiple thin film transistor (TFT)
It is set in the viewing area, the thin film transistor (TFT) includes grid, source electrode, drain electrode, insulating layer and the first passivation layer;
Blocking portion, the blocking portion are set to the non-display area, the blocking portion at least partly with the grid, source electrode,
At least one layer of material in drain electrode, insulating layer and the first passivation layer is identical.
2. display module as described in claim 1, it is characterised in that: the blocking portion includes the first sub- barrier layer, and described the
One sub- barrier layer is identical as the material of the grid.
3. display module as claimed in claim 2, it is characterised in that: the blocking portion further includes the second sub- barrier layer, third
Sub- barrier layer and the 4th sub- barrier layer, the second sub- barrier layer are set to the described first sub- barrier layer far from the substrate one
Side, the sub- barrier layer of third are set to the described second sub- barrier layer far from the described first sub- barrier layer side, the 4th son
Barrier layer is set to the sub- barrier layer of the third far from the described second sub- barrier layer side, the second sub- barrier layer and it is described absolutely
The material of edge layer is identical, and the sub- barrier layer of third is identical as the material of the source electrode and drain electrode, the 4th sub- barrier layer with
The material of the passivation layer is identical.
4. display module as claimed in claim 2, it is characterised in that: the blocking portion further includes the sub- barrier layer of third, described
The sub- barrier layer of third is identical as the material of the source electrode and drain electrode.
5. display module as claimed in claim 4, it is characterised in that: the thin film transistor (TFT) array further includes a flatness layer,
The flatness layer is set to the thin film transistor (TFT) array far from the substrate side, and the blocking portion further includes that the 5th son stops
Layer, the 5th sub- barrier layer are identical as the material of the flatness layer.
6. display module as described in claim 1, it is characterised in that: the quantity of the blocking portion is multiple, the multiple resistance
Stopper is set to the same surface of the substrate, and the multiple blocking portion is all set in the non-display area.
7. display module as claimed in claim 6, it is characterised in that: the blocking portion further includes a protective layer, the protection
Layer is set at least one outermost of the blocking portion far from the substrate.
8. display module as claimed in claim 7, it is characterised in that: the structure of the multiple blocking portion is not exactly the same.
9. display module as claimed in claim 8, it is characterised in that: the display module further includes cover board and frame glue, described
Frame glue is set to the non-display area and covers the blocking portion at least partly, and the cover board passes through the frame glue and the base
Plate bonding.
10. display module as claimed in claim 9, it is characterised in that: the cover board includes multiple convex to the orientation substrate
The interruption risen, the interruption are set between two blocking portions but do not contact with the substrate.
11. a kind of touch-control display panel, which is characterized in that the touch-control display panel includes claim 1-10 any one institute
The display module stated, the display module is for showing picture.
12. a kind of electronic device, which is characterized in that the electronic device includes display described in claim 1-10 any one
Mould group, the display module is for showing picture.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
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CN201910261962.5A CN109920806B (en) | 2019-04-02 | 2019-04-02 | Display module, touch display panel using same and electronic device |
TW108113288A TWI761674B (en) | 2019-04-02 | 2019-04-16 | Display module and touch display panel and electronic device using the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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CN201910261962.5A CN109920806B (en) | 2019-04-02 | 2019-04-02 | Display module, touch display panel using same and electronic device |
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CN109920806A true CN109920806A (en) | 2019-06-21 |
CN109920806B CN109920806B (en) | 2021-08-03 |
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CN201910261962.5A Active CN109920806B (en) | 2019-04-02 | 2019-04-02 | Display module, touch display panel using same and electronic device |
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Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN101866944A (en) * | 2010-02-26 | 2010-10-20 | 信利半导体有限公司 | Organic light-emitting diode display |
CN105446031A (en) * | 2014-09-30 | 2016-03-30 | 群创光电股份有限公司 | Display panel and display device |
CN106154649A (en) * | 2015-04-02 | 2016-11-23 | 南京瀚宇彩欣科技有限责任公司 | Display device and its manufacture method |
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TWI276891B (en) * | 2006-04-07 | 2007-03-21 | Innolux Display Corp | Liquid crystal panel |
US20110058135A1 (en) * | 2008-05-26 | 2011-03-10 | Sharp Kabushiki Kaisha | Display device |
KR101984269B1 (en) * | 2013-04-29 | 2019-05-30 | 엘지디스플레이 주식회사 | Liquid crystal display device and manufacturing method thereof |
KR102160694B1 (en) * | 2013-11-01 | 2020-09-29 | 삼성디스플레이 주식회사 | Display apparatus and method of manufacturing the same |
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN101866944A (en) * | 2010-02-26 | 2010-10-20 | 信利半导体有限公司 | Organic light-emitting diode display |
CN105446031A (en) * | 2014-09-30 | 2016-03-30 | 群创光电股份有限公司 | Display panel and display device |
CN106154649A (en) * | 2015-04-02 | 2016-11-23 | 南京瀚宇彩欣科技有限责任公司 | Display device and its manufacture method |
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TWI761674B (en) | 2022-04-21 |
TW202038451A (en) | 2020-10-16 |
CN109920806B (en) | 2021-08-03 |
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