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CN109920806A - Display module and the touch-control display panel and electronic device for applying it - Google Patents

Display module and the touch-control display panel and electronic device for applying it Download PDF

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Publication number
CN109920806A
CN109920806A CN201910261962.5A CN201910261962A CN109920806A CN 109920806 A CN109920806 A CN 109920806A CN 201910261962 A CN201910261962 A CN 201910261962A CN 109920806 A CN109920806 A CN 109920806A
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CN
China
Prior art keywords
sub
barrier layer
layer
blocking portion
display module
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201910261962.5A
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Chinese (zh)
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CN109920806B (en
Inventor
钟金峰
江显伟
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Interface Optoelectronics Shenzhen Co Ltd
Cheng Cheng Technology Chengdu Co Ltd
General Interface Solution Ltd
Original Assignee
Interface Optoelectronics Shenzhen Co Ltd
Cheng Cheng Technology Chengdu Co Ltd
General Interface Solution Ltd
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Application filed by Interface Optoelectronics Shenzhen Co Ltd, Cheng Cheng Technology Chengdu Co Ltd, General Interface Solution Ltd filed Critical Interface Optoelectronics Shenzhen Co Ltd
Priority to CN201910261962.5A priority Critical patent/CN109920806B/en
Priority to TW108113288A priority patent/TWI761674B/en
Publication of CN109920806A publication Critical patent/CN109920806A/en
Application granted granted Critical
Publication of CN109920806B publication Critical patent/CN109920806B/en
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Anticipated expiration legal-status Critical

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Abstract

A kind of display module a, comprising: substrate, the substrate include viewing area and non-display area, and the non-display area is arranged around the viewing area;One thin film transistor (TFT) array, the thin film transistor (TFT) array include multiple thin film transistor (TFT)s, and the multiple thin film transistor (TFT) is set in the viewing area, and the thin film transistor (TFT) includes grid, source electrode, drain electrode, insulating layer and the first passivation layer;One blocking portion, the blocking portion are set to the non-display area, the blocking portion it is at least partly identical as at least one layer of material in the grid, source electrode, drain electrode, insulating layer or the first passivation layer.The present invention also provides the touch-control display panels and electronic device of the application display module.

Description

Display module and the touch-control display panel and electronic device for applying it
Technical field
The present invention relates to a kind of display module and using its touch-control display panel and electronic device.
Background technique
Portable electronic device (such as smart phone) with touch function is very popular in existing market.It is existing Portable electronic device generally have display area, used in can be LCD or OLED, but no matter it is above-mentioned which kind of display Technology requires to be packaged, and the upper lower glass plate of viewing area is bonded by traditional encapsulating structure using frame glue, but frame glue Material it is more single and structure is relatively simple, the entrance of steam can not be effectively prevent, so that viewing area is easy to be invaded by steam Aging.It is that those skilled in the art need to solve that encapsulating structure, which how to be improved, to avoid steam intrusion.
Summary of the invention
In view of this, the present invention provides a kind of display module, which there is preferable encapsulating structure can effectively keep away Exempt from aqueous vapor intrusion.
In addition, there is a need to provide a kind of touch-control display panel and electronic device with the display module.
A kind of display module, comprising:
One substrate, the substrate include viewing area and non-display area, and the non-display area is arranged around the viewing area;
One thin film transistor (TFT) array, the thin film transistor (TFT) array include multiple thin film transistor (TFT)s, and the multiple film is brilliant Body pipe is set in the viewing area, and the thin film transistor (TFT) includes grid, source electrode, drain electrode, insulating layer and the first passivation layer;
One blocking portion, the blocking portion are set to the non-display area, the blocking portion at least partly with the grid, At least one layer of material in source electrode, drain electrode, insulating layer or the first passivation layer is identical.
In an embodiment, the blocking portion includes the first sub- barrier layer, the first sub- barrier layer and the grid Material is identical.
In an embodiment, the blocking portion further includes the second sub- barrier layer, the sub- barrier layer of third and the 4th sub- barrier layer, The second sub- barrier layer is set to the described first sub- barrier layer far from the substrate side, and the sub- barrier layer of third is set to Far from the described first sub- barrier layer side, the 4th sub- barrier layer is set to third and stops on the second sub- barrier layer For layer far from the described second sub- barrier layer side, the second sub- barrier layer is identical as the material of the insulating layer, third Barrier layer is identical as the material of the source electrode and drain electrode, and the 4th sub- barrier layer is identical as the material of the passivation layer.
In an embodiment, the blocking portion further includes the sub- barrier layer of third, the sub- barrier layer of third and the source electrode And the material of drain electrode is identical.
In an embodiment, the thin film transistor (TFT) array further includes a flatness layer, and the flatness layer is set to described thin For film transistor array far from the substrate side, the blocking portion further includes the 5th sub- barrier layer, the 5th sub- barrier layer with The material of the flatness layer is identical.
In an embodiment, the quantity of the blocking portion be it is multiple, the multiple blocking portion is set to the same of the substrate One surface, the multiple blocking portion are all set in the non-display area.
In an embodiment, the blocking portion further includes a protective layer, and the protective layer is set at least one described resistance Outermost of the stopper far from the substrate.
In an embodiment, the structure of the multiple blocking portion is not exactly the same.
In an embodiment, the display module further includes cover board and frame glue, and the frame glue is set to the non-display area And covering the blocking portion at least partly, the cover board passes through the frame glue and the substrate bonding.
In an embodiment, the cover board includes multiple interruptions to the orientation substrate protrusion, and the interruption is set It is placed between two blocking portions but is not contacted with the substrate.
The present invention also provides a kind of display panel and a kind of electronic device, the display panel and electronic device include above-mentioned Display module.
Display module of the invention can effectively promote the seal degree of encapsulation by the way that blocking portion is arranged in non-display area.
Detailed description of the invention
Fig. 1 is the stereoscopic schematic diagram of display module of the invention.
Fig. 2 is schematic cross-sectional view of the Fig. 1 along II-II line.
Fig. 3 is the partial schematic sectional view of the non-display area the invention shows mould group in an embodiment.
Fig. 4 is the partial schematic sectional view of the non-display area the invention shows mould group in another embodiment.
Fig. 5 is the partial schematic sectional view of the non-display area the invention shows mould group in another embodiment.
Fig. 6 is the partial schematic sectional view of the non-display area the invention shows mould group in another embodiment.
Fig. 7 is the partial schematic sectional view of the non-display area the invention shows mould group in another embodiment.
Fig. 8 is the partial schematic sectional view of the non-display area the invention shows mould group in another embodiment.
Fig. 9 is the stereoscopic schematic diagram of electronic device of the present invention.
Main element symbol description
The present invention that the following detailed description will be further explained with reference to the above drawings.
Specific embodiment
In order to keep techniques disclosed in this application content more detailed with it is complete, be referred to attached drawing and it is of the invention under Various specific embodiments are stated, identical label represents same or similar component in attached drawing.However, the ordinary skill of this field Personnel should be appreciated that embodiment provided hereinafter is not intended to limit the invention covered range.In addition, attached drawing is only It is drawn for being schematically illustrated, and not according to its full size.
With reference to the accompanying drawings, a specific embodiment of the invention is described in further detail.
As shown in FIG. 1, FIG. 1 is the stereoscopic schematic diagrams of display module 10 of the invention, as shown in Fig. 2, Fig. 2 is Fig. 1 along II- The schematic cross-sectional view of II line.The display module 10 of first embodiment of the invention includes substrate 11, thin film transistor (TFT) array 12, stops Portion 13, frame glue 14 and cover board 15.
The substrate 11 is the bearing basement of the display module 10, the thin film transistor (TFT) array 12 of the display module 10 11 1 surface of substrate is set to blocking portion 13.The substrate 11 can be flexible material or non-flexible material, in this reality It applies in example, the material of the substrate 11 can be organic matter, such as polycarbonate (Polycarbonate, PC), polyimides (Polyimide, PI), polyethylene naphthalate (Polyethylene naphthalate two formic acid Glycol ester, PEN), polyethylene terephthalate (polyethylene glycol terephthalate, PET) And cyclic olefin copolymer (Cyclo-olefin polymer, COP);The material of the substrate 11 may be inorganic matter, Such as silica (SiO2).It should be understood that the material of substrate 11 can select according to actual needs.
The substrate 11 includes viewing area 111 and non-display area 112, and 111 counterpart substrate 11 of viewing area is provided with film crystalline substance The middle section on the surface of body pipe array 12 and blocking portion 13 is arranged, and 112 counterpart substrate 11 of non-display area is provided with film crystal The periphery setting on the surface of pipe array 12 and blocking portion 13, that is, non-display area 112 is arranged around viewing area 111.Thin film transistor (TFT) Array 12 is set in viewing area 111, and blocking portion 13 is set in non-display area 112.
Thin film transistor (TFT) array 12 includes multiple thin film transistor (TFT)s 120, and thin film transistor (TFT) 120 is set to 11 surface of substrate. Thin film transistor (TFT) 120 includes grid 121, insulating layer 122, channel layer 123, source electrode 124, the 125, first passivation layer 126 of drain electrode, resistance Interlayer 127, the second passivation layer 128 and flatness layer 129.Grid 121 is set to 11 surface of substrate, and insulating layer 122 covers grid 121, channel layer 123 is set to insulating layer 122 and is set to insulating layer 122 far far from 121 side of grid, source electrode 124 and drain electrode 125 From 121 surface of grid and cover channel layer 123 at least partly, source electrode 124 is not contacted with drain electrode 125, channel layer 123, source electrode 124 with drain electrode 125 be conductive material, and source electrode 124 is electrically connected by channel layer 123 and drain electrode 125, the first passivation layer 126 Source electrode 124, drain electrode 125 and channel layer 123 are covered not by the part of the surface of 125 covering of source electrode 124 and drain electrode, barrier layer 127 It is set to 11 surface of substrate and covers the exposed surface of the first passivation layer 126, insulating layer 122, the second passivation layer 128 is set to resistance For interlayer 127 far from 11 side of substrate, flatness layer 129 is set to the second passivation layer 128 far from 127 side of barrier layer.
Multiple thin film transistor (TFT)s 120 can be made together by being etched by light processing procedure, for example, passing through physics gas on 11 surface of substrate Mutually deposition (PVD) or the mode of chemical vapor deposition (CVD) form layer of material layer, then pass sequentially through exposure, development and The mode of etching makes the material layer pattern to obtain multiple spaced grids 121, by this method can be in substrate 11 surfaces obtain the grid 121 of multiple thin film transistor (TFT)s 120 simultaneously;Similarly, the insulating layer 122 of multiple thin film transistor (TFT)s 120, logical Channel layer 123, source electrode 124, the 125, first passivation layer 126 of drain electrode, barrier layer 127, the second passivation layer 128 and flatness layer 129 It can be made together by being etched by light processing procedure respectively.
Blocking portion 13 at least partly with grid 121, source electrode 124, drain electrode 125, insulating layer 122 and the first passivation layer 126 In at least one layer of material it is identical and with along be etched by light processing procedure in complete.Blocking portion 13 can be multilayered structure, It may include the sub- barrier layer of multilayer laminated setting, the grid on wherein at least one sub- barrier layer and thin film transistor (TFT) 120 121, source electrode 124, the 125, insulating layer 122 that drains are identical at least one layer of material in the first passivation layer 126 and with along with It completes in photoetch processing procedure.Frame glue 14 is set to non-display area 112 and covers blocking portion 13 at least partly, and cover board 15 is logical It crosses frame glue 14 and substrate 11 bonds.
As shown in Fig. 2, the quantity of blocking portion 13 is at least one, and frame glue 14 covers blocking portion 13 in an embodiment Close to 111 side of viewing area, the one end of blocking portion 13 far from viewing area 111 is not covered by frame glue 14.Blocking portion 13 includes multiple Sub- barrier layer, defining multiple sub- barrier layers is respectively the first sub- barrier layer 131, the second sub- barrier layer 132, the sub- barrier layer of third 133 and the 4th sub- barrier layer 134;First sub- barrier layer 131 is set to 11 surface of substrate, and the second sub- barrier layer 132 is set to Far from 11 side of substrate, the sub- barrier layer 133 of third is set to the second sub- barrier layer 132 far from the first son on the first sub- barrier layer 131 131 side of barrier layer, the 4th sub- barrier layer 134 are set to the sub- barrier layer 133 of third far from the second sub- 132 side of barrier layer.The One sub- barrier layer 131 is identical as the material of grid 121 and completes being etched by light in processing procedure with along with, it is possible to understand that, the One sub- barrier layer 131 is obtained after being etched by light with grid 121 by same layer of material;Second sub- barrier layer 132 and insulating layer 122 Material it is identical and with along be etched by light processing procedure in complete;The sub- barrier layer of third 133 and source electrode 124 and drain electrode 125 Material is identical and completes being etched by light in processing procedure with along with;The material phase on the 4th sub- barrier layer 134 and the first passivation layer 126 With and with along be etched by light processing procedure in complete.
As shown in figure 3, the partial schematic sectional view of the non-display area 112 for display module 10 stops in an embodiment The quantity in portion 13 is at least two, and frame glue 14 covers two blocking portions 13 one end close to each other, and two blocking portions 13 are mutually remote From end do not covered by frame glue 14.Two blocking portions 13 include four sub- barrier layers: defining four sub- barrier layer difference For the first sub- barrier layer 131, the second sub- barrier layer 132, the sub- barrier layer 133 of third and the 4th sub- barrier layer 134;First son resistance Barrier 131 is set to 11 surface of substrate, and the second sub- barrier layer 132 is set to the first sub- barrier layer 131 far from 11 side of substrate, and Three sub- barrier layers 133 are set to the second sub- barrier layer 132 far from the first sub- 131 side of barrier layer, and the 4th sub- barrier layer 134 is arranged In the sub- barrier layer 133 of third far from the second sub- 132 side of barrier layer.First sub- barrier layer 131 it is identical as the material of grid 121 and It completes being etched by light in processing procedure with along with, it is possible to understand that, the first sub- barrier layer 131 is with grid 121 by same layer material Layer obtains after being etched by light;Second sub- barrier layer 132 is identical as the material of insulating layer 122 and makes being etched by light in processing procedure with along with It completes;The sub- barrier layer 133 of third is identical as the material of source electrode 124 and drain electrode 125 and makes being etched by light in processing procedure with along with It completes;4th sub- barrier layer 134 is identical as the material of the first passivation layer 126 and completes being etched by light in processing procedure with along with; Blocking portion 13 close to viewing area 111 further includes a protective layer 136, and protective layer 136 is set to the outermost of the blocking portion 13, is prevented Sheath 136 is identical as the material of barrier layer 127 and completes being etched by light in processing procedure with along with.
As shown in figure 4, the partial schematic sectional view of the non-display area 112 for display module 10, in another embodiment, resistance The quantity of stopper 13 is at least two, and frame glue 14 covers two blocking portions 13 one end close to each other, and two blocking portions 13 are mutual Separate end is not covered by frame glue 14.One of blocking portion 13 includes the first sub- barrier layer 131, the second sub- barrier layer 132, the sub- barrier layer 133 of third, the 4th sub- barrier layer 134 and protective layer 136;First sub- barrier layer 131 is set to substrate 11 Surface, the second sub- barrier layer 132 are set to the first sub- barrier layer 131 far from 11 side of substrate, and the sub- barrier layer 133 of third is set to Far from the first sub- 131 side of barrier layer, it is remote that the 4th sub- barrier layer 134 is set to the sub- barrier layer 133 of third on the second sub- barrier layer 132 From the second sub- 132 side of barrier layer, protective layer 136 is set to the outermost of the blocking portion 13.Another blocking portion 13 includes the One sub- barrier layer 131 and the sub- barrier layer 133 of third, the first sub- barrier layer 131 are set to 11 surface of substrate, the sub- barrier layer of third 133 are set to the described first sub- barrier layer 131 far from 11 side of substrate.The material on the first sub- barrier layer 131 and grid 121 It is identical and with along be etched by light processing procedure in complete, it is possible to understand that, the first sub- barrier layer 131 is with grid 121 by same Layer of material obtains after being etched by light;The sub- barrier layer 133 of third is identical as the material of insulating layer 122 and system is being etched by light with along with It completes in journey;The sub- barrier layer 133 of third is identical as the material of source electrode 124 and drain electrode 125 and processing procedure is being etched by light with along with In complete;4th sub- barrier layer 134 is identical as the material of the first passivation layer 126 and makes being etched by light in processing procedure with along with It completes;Protective layer 136 is identical as the material of barrier layer 127 and completes being etched by light in processing procedure with along with.
As shown in figure 5, the partial schematic sectional view of the non-display area 112 for display module 10, in another embodiment, resistance The quantity of stopper 13 is at least two, and frame glue 14 covers two blocking portions 13 one end close to each other, and two blocking portions 13 are mutual Separate end is not covered by frame glue 14.One of blocking portion 13 includes the first sub- barrier layer 131, the second sub- barrier layer 132, the sub- barrier layer 133 of third, the 4th sub- barrier layer 134 and protective layer 136;First sub- barrier layer 131 is set to substrate 11 Surface, the second sub- barrier layer 132 are set to the first sub- barrier layer 131 far from 11 side of substrate, and the sub- barrier layer 133 of third is set to Far from the first sub- 131 side of barrier layer, it is remote that the 4th sub- barrier layer 134 is set to the sub- barrier layer 133 of third on the second sub- barrier layer 132 From the second sub- 132 side of barrier layer, protective layer 136 is set to the outermost of the blocking portion 13.Another blocking portion 13 includes the One sub- barrier layer 131, the sub- barrier layer 133 of third and the 5th sub- barrier layer 135;First sub- barrier layer 131 is set to substrate 11 Surface, the sub- barrier layer 133 of third are set to the first sub- barrier layer 131 far from 11 side of substrate, and the 5th sub- barrier layer 135 is set to The sub- barrier layer 133 of third is far from the first sub- 131 side of barrier layer.First sub- barrier layer 131 it is identical as the material of grid 121 and It is etched by light in processing procedure and completes with along with, it is possible to understand that, the first sub- barrier layer 131 is with grid 121 by same layer of material It is obtained after being etched by light;Second sub- barrier layer 132 is identical as the material of insulating layer 122 and makes being etched by light in processing procedure with along with It completes;The sub- barrier layer 133 of third is identical as the material of source electrode 124 and drain electrode 125 and has made being etched by light in processing procedure with along with At;4th sub- barrier layer 134 is identical as the material of the first passivation layer 126 and completes being etched by light in processing procedure with along with;The Five sub- barrier layers 135 are identical as the material of flatness layer 129 and complete being etched by light in processing procedure with along with;Protective layer 136 with The material of barrier layer 127 is identical and completes being etched by light in processing procedure with along with.
As shown in fig. 6, the partial schematic sectional view of the non-display area 112 for display module 10, in another embodiment, resistance The quantity of stopper 13 is at least two, and frame glue 14 covers two blocking portions 13 one end close to each other, and two blocking portions 13 are mutual Separate end is not covered by frame glue 14.One of blocking portion 13 includes the first sub- barrier layer 131, the sub- barrier layer of third 133, the 5th sub- barrier layer 135 and protective layer 136;First sub- barrier layer 131 is set to 11 surface of substrate, the sub- barrier layer of third 133 are set to the first sub- barrier layer 131 far from 11 side of substrate, and it is remote that the 5th sub- barrier layer 135 is set to the sub- barrier layer 133 of third From the first sub- 131 side of barrier layer, protective layer 136 is set to the outermost of the blocking portion 13.Another blocking portion 13 includes the One sub- barrier layer 131, the sub- barrier layer 133 of third and the 5th sub- barrier layer 135;First sub- barrier layer 131 is set to substrate 11 Surface, the sub- barrier layer 133 of third are set to the first sub- barrier layer 131 far from 11 side of substrate, and the 5th sub- barrier layer 135 is set to The sub- barrier layer 133 of third is far from the first sub- 131 side of barrier layer.First sub- barrier layer 131 it is identical as the material of grid 121 and It is etched by light in processing procedure and completes with along with, it is possible to understand that, the first sub- barrier layer 131 is with grid 121 by same layer of material It is obtained after being etched by light;Second sub- barrier layer 132 is identical as the material of insulating layer 122 and makes being etched by light in processing procedure with along with It completes;The sub- barrier layer 133 of third is identical as the material of source electrode 124 and drain electrode 125 and has made being etched by light in processing procedure with along with At;4th sub- barrier layer 134 is identical as the material of the first passivation layer 126 and completes being etched by light in processing procedure with along with;The Five sub- barrier layers 135 are identical as the material of flatness layer 129 and complete being etched by light in processing procedure with along with;Protective layer 136 with The material of barrier layer 127 is identical and completes being etched by light in processing procedure with along with.
As shown in fig. 7, the partial schematic sectional view of the non-display area 112 for display module 10, in another embodiment, resistance The quantity of stopper 13 is at least two, and frame glue 14 covers 111 one end of close viewing area and another blocking of a blocking portion 13 The one end of portion 13 far from viewing area 111, the end that two blocking portions 13 are located remotely from each other are not covered by frame glue 14.Two blocking portions It include the first sub- barrier layer 131, the second sub- barrier layer 132, the sub- barrier layer 133 of third, the 4th sub- barrier layer 134 and protection Layer 136;In blocking portion 13 near substrate 11 be arranged sub- barrier layer be the first sub- barrier layer 131, be set to first son stop Layer 131 is the second sub- barrier layer 132 far from 11 side of substrate, is set to the second sub- barrier layer 132 far from the first sub- barrier layer 131 sides are the sub- barrier layer 133 of third, and being set to the sub- barrier layer 133 of third far from the second sub- 132 side of barrier layer is Four sub- barrier layers 134, protective layer 136 are set to the outermost of the blocking portion 13.The material on the first sub- barrier layer 131 and grid 121 Expect identical and completes being etched by light in processing procedure with along with, it is possible to understand that, the first sub- barrier layer 131 is with grid 121 by same Layer of material layer obtains after being etched by light.Second sub- barrier layer 132 is identical as the material of insulating layer 122 and is being etched by light with along with It completes in processing procedure.The sub- barrier layer 133 of third is identical as the material of source electrode 124 and drain electrode 125 and makes being etched by light with along with It completes in journey.4th sub- barrier layer 134 is identical as the material of the first passivation layer 126 and makes being etched by light in processing procedure with along with It completes.Protective layer 136 is identical as the material of barrier layer 127 and completes being etched by light in processing procedure with along with.
As shown in figure 8, the partial schematic sectional view of the non-display area 112 for display module 10, in another embodiment, resistance The quantity of stopper 13 is at least two, and frame glue 14 covers 111 one end of close viewing area and another blocking of a blocking portion 13 The one end of portion 13 far from viewing area 111, the end that two blocking portions 13 are located remotely from each other are not covered by frame glue 14.Two blocking portions It include the first sub- barrier layer 131, the second sub- barrier layer 132, the sub- barrier layer 133 of third, the 4th sub- barrier layer 134 and protection Layer 136;In blocking portion 13 near substrate 11 be arranged sub- barrier layer be the first sub- barrier layer 131, be set to first son stop Layer 131 is the second sub- barrier layer 132 far from 11 side of substrate, is set to the second sub- barrier layer 132 far from the first sub- barrier layer 131 sides are the sub- barrier layer 133 of third, and being set to the sub- barrier layer 133 of third far from the second sub- 132 side of barrier layer is Four sub- barrier layers 134, protective layer 136 are set to the outermost of the blocking portion 13.The material on the first sub- barrier layer 131 and grid 121 Expect identical and completes being etched by light in processing procedure with along with, it is possible to understand that, the first sub- barrier layer 131 is with grid 121 by same Layer of material layer obtains after being etched by light.Second sub- barrier layer 132 is identical as the material of insulating layer 122 and is being etched by light with along with It completes in processing procedure.The sub- barrier layer 133 of third is identical as the material of source electrode 124 and drain electrode 125 and makes being etched by light with along with It completes in journey.4th sub- barrier layer 134 is identical as the material of the first passivation layer 126 and makes being etched by light in processing procedure with along with It completes.Protective layer 136 is identical as the material of barrier layer 127 and completes being etched by light in processing procedure with along with.Cover board 15 is also Including interruption 151, interruption 151 extends from cover board 15 to 11 direction of substrate but does not contact with substrate 11, and interruption 151 is arranged It is contacted between two blocking portions 13 and not with any one blocking portion 13.
The quantity of blocking portion 13 can be to be multiple, and the structure of each blocking portion 13 is not exactly the same.Blocking portion 13 is multilayer Structure, include at least two layers, grid 121, source electrode 124, drain electrode 125 and flatness layer 129 can be metal material, insulating layer 122, First passivation layer 126 and barrier layer 127 can be organic material, and blocking portion 13 can be the mixing of metal material and organic material Object, the mixed structure have more preferable leakproofness compared to traditional single layer frame glue 14, and the packaging mechanism of display module 10 can have Effect prevents steam from invading.And the sub- barrier layer of blocking portion 13 is identical as the material of unit in thin film transistor (TFT) 120, blocking portion 13 can complete in identical photoetch processing procedure with thin film transistor (TFT) 120, that is, in the process of production thin film transistor (TFT) 120 The middle range for changing etching retains some materials to form blocking portion 13, without opening up additional processing procedure in non-display area 112.
The present invention also provides a kind of electronic device 1, which includes main body 20 and the display that is set in main body 20 Panel 30, for display panel 30 for showing picture, display panel 30 includes at least display module 10, and the display module 10 can be with For display module described in above-described embodiment.In Fig. 9 only by taking electronic device 1 is mobile phone as an example, in other embodiments, the electronics Device 1 can also be personal computer, tablet computer, intelligent appliance etc..
Above, a specific embodiment of the invention is described with reference to the accompanying drawings.But those skilled in the art It is understood that without departing from the spirit and scope of the present invention, can also make to a specific embodiment of the invention each Kind change and replacement.These changes and replacement are all fallen within the scope of the invention as defined in the claims.

Claims (12)

1. a kind of display module characterized by comprising
One substrate, the substrate include viewing area and non-display area, and the non-display area is arranged around the viewing area;
One thin film transistor (TFT) array, the thin film transistor (TFT) array include multiple thin film transistor (TFT)s, the multiple thin film transistor (TFT) It is set in the viewing area, the thin film transistor (TFT) includes grid, source electrode, drain electrode, insulating layer and the first passivation layer;
Blocking portion, the blocking portion are set to the non-display area, the blocking portion at least partly with the grid, source electrode, At least one layer of material in drain electrode, insulating layer and the first passivation layer is identical.
2. display module as described in claim 1, it is characterised in that: the blocking portion includes the first sub- barrier layer, and described the One sub- barrier layer is identical as the material of the grid.
3. display module as claimed in claim 2, it is characterised in that: the blocking portion further includes the second sub- barrier layer, third Sub- barrier layer and the 4th sub- barrier layer, the second sub- barrier layer are set to the described first sub- barrier layer far from the substrate one Side, the sub- barrier layer of third are set to the described second sub- barrier layer far from the described first sub- barrier layer side, the 4th son Barrier layer is set to the sub- barrier layer of the third far from the described second sub- barrier layer side, the second sub- barrier layer and it is described absolutely The material of edge layer is identical, and the sub- barrier layer of third is identical as the material of the source electrode and drain electrode, the 4th sub- barrier layer with The material of the passivation layer is identical.
4. display module as claimed in claim 2, it is characterised in that: the blocking portion further includes the sub- barrier layer of third, described The sub- barrier layer of third is identical as the material of the source electrode and drain electrode.
5. display module as claimed in claim 4, it is characterised in that: the thin film transistor (TFT) array further includes a flatness layer, The flatness layer is set to the thin film transistor (TFT) array far from the substrate side, and the blocking portion further includes that the 5th son stops Layer, the 5th sub- barrier layer are identical as the material of the flatness layer.
6. display module as described in claim 1, it is characterised in that: the quantity of the blocking portion is multiple, the multiple resistance Stopper is set to the same surface of the substrate, and the multiple blocking portion is all set in the non-display area.
7. display module as claimed in claim 6, it is characterised in that: the blocking portion further includes a protective layer, the protection Layer is set at least one outermost of the blocking portion far from the substrate.
8. display module as claimed in claim 7, it is characterised in that: the structure of the multiple blocking portion is not exactly the same.
9. display module as claimed in claim 8, it is characterised in that: the display module further includes cover board and frame glue, described Frame glue is set to the non-display area and covers the blocking portion at least partly, and the cover board passes through the frame glue and the base Plate bonding.
10. display module as claimed in claim 9, it is characterised in that: the cover board includes multiple convex to the orientation substrate The interruption risen, the interruption are set between two blocking portions but do not contact with the substrate.
11. a kind of touch-control display panel, which is characterized in that the touch-control display panel includes claim 1-10 any one institute The display module stated, the display module is for showing picture.
12. a kind of electronic device, which is characterized in that the electronic device includes display described in claim 1-10 any one Mould group, the display module is for showing picture.
CN201910261962.5A 2019-04-02 2019-04-02 Display module, touch display panel using same and electronic device Active CN109920806B (en)

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Application Number Priority Date Filing Date Title
CN201910261962.5A CN109920806B (en) 2019-04-02 2019-04-02 Display module, touch display panel using same and electronic device
TW108113288A TWI761674B (en) 2019-04-02 2019-04-16 Display module and touch display panel and electronic device using the same

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Application Number Priority Date Filing Date Title
CN201910261962.5A CN109920806B (en) 2019-04-02 2019-04-02 Display module, touch display panel using same and electronic device

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CN109920806A true CN109920806A (en) 2019-06-21
CN109920806B CN109920806B (en) 2021-08-03

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