CN109285913A - Low surface leakage current mesa-type photodetector and method of making the same - Google Patents
Low surface leakage current mesa-type photodetector and method of making the same Download PDFInfo
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- CN109285913A CN109285913A CN201811349887.XA CN201811349887A CN109285913A CN 109285913 A CN109285913 A CN 109285913A CN 201811349887 A CN201811349887 A CN 201811349887A CN 109285913 A CN109285913 A CN 109285913A
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Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
- H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes
- H10F30/2255—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes in which the active layers form heterostructures, e.g. SAM structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/127—The active layers comprising only Group III-V materials, e.g. GaAs or InP
- H10F71/1272—The active layers comprising only Group III-V materials, e.g. GaAs or InP comprising at least three elements, e.g. GaAlAs or InGaAsP
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/129—Passivating
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/30—Coatings
- H10F77/306—Coatings for devices having potential barriers
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Abstract
The invention belongs to detector chip manufacturing technology field, specially a kind of low tracking current mesa-type photodetectors and preparation method thereof, the method includes the top layer deposition exposure masks in epitaxial wafer, output mesa etch window by photoetching process；Epitaxial wafer is etched by epitaxial mesa using wet etching, carries out surface chemistry cleaning, removal wet etching reaction residual product etc.；It is handled using sulfuration process, is passivated the sidewall surfaces of epitaxial mesa, reduce its surface state；Sidewall surfaces are handled using hmds, are coated with benzocyclobutene, form protective layer；Under nitrogen atmosphere protection, using distribution elevated cure；Etched portions protective layer keeps the top of table top exposed, according to evaporating or sputtering mode surface deposition metal film on the contact layer, forms P-type electrode after being stripped；By thinning back side, anti-reflection film is overleaf deposited；N electrode is made using Lift-off.The present invention solves mesa device sidewall surfaces as caused by wet etching and is passivated difficult problem.
Description
Technical field
The invention belongs to detector chip manufacturing technology field, specially a kind of low tracking current mesa photodetection
Device and preparation method thereof.
Background technique
Performance of semiconductor device is seriously influenced by semiconductor surface effect.In mesa technology production, lattice period
Property can be destroyed, and outermost layer atomic surface will generate dangling bonds, these dangling bonds can capture internal electronics or hole, shape
Increase surface state at surface depletion layer.And outermost surface, there is also other defect and impurity oxides, these factors can prohibit
Impurity energy level is introduced in band and generates complex centre, is increased recombination-rate surface, is increased device surface leakage current, seriously affected device
Part electric property.
Mesa-type photodetectors are widely used in high-speed electronic components and opto-electronic device, and work is in one often
Determine bias state, the minority carrier life time for reducing surface recombination center can be aggravated under the high electric field of surface, increase tracking current.Therefore,
The side wall passivation of table top photodetector is be difficult the problem of.The technique side of mesa device tracking current is reduced at present
Method has:
(1), a kind of table top indium gallium arsenic detector preparation method (application number 201110317200.6) and PIN table top InGaAs
Infrared detector and preparation method thereof (application number 201510031343.9) is all made of vulcanization reduction table after wet etching table top
Then face state protects sulfuric horizon with inorganic passivating film (silicon nitride either aluminium oxide).The plasma that this technique introduces
Bombardment and higher growth temperature (generally higher than 250 DEG C) can destroy sulfuric horizon, deteriorate passivation effect, increase tracking current
Greatly.
(2), based on the photoelectronic detector chip manufacture method (application number for exempting from plasma process reduction dark current
201310013303.2) damage of the plasma to corrosion surface is avoided, is taken using organic passivation film (benzocyclobutene BCB)
For chemical vapor deposition passivation technique, dark current is reduced.But before BCB passivation, surface sulfide processing is not done, corrodes side wall
Surface is easy to produce high surfaces state, deteriorates passivation effect.
Summary of the invention
In view of this, the present invention provides a kind of low tracking current mesa-type photodetectors and preparation method thereof.Solution
Certainly mesa device sidewall surfaces as caused by wet etching are passivated difficult problem.It is logical first after table top moulding process
Corrosion material surface state is effectively reduced in over cure, possesses and the comparable dark current levels of planar device.Use will not give sulphur again
Change the phenylpropyl alcohol cyclobutane (BCB) that layer causes damage and be used as protective layer, plays the effect for keeping sulfuric horizon steady in a long-term.It is being biased
Under, ingredient in photodetector dark current from tracking current also very little occurs mainly with body dark current, provides one
The production method of the low tracking current mesa-type photodetectors of kind.
The production methods of the low tracking current mesa-type photodetectors the following steps are included:
S1, the top layer deposition exposure mask in epitaxial wafer, output mesa etch window by photoetching process；
S2, the epitaxial wafer is etched by epitaxial mesa using wet etching, carries out surface chemistry cleaning, removal wet process is carved
Erosion reaction residual product, oxide on surface and impurity contamination object；
S3, it is handled using sulfuration process, is passivated the sidewall surfaces of epitaxial mesa, reduce its surface state；
S4, sidewall surfaces are handled using hmds, is coated with benzocyclobutene, form protective layer；In nitrogen gas
Under atmosphere protection, using distribution elevated cure；
S5, etched portions protective layer, keep the top of the epitaxial mesa exposed, connect according to evaporating or sputtering mode described
Contact layer upper surface deposits metal film, forms P-type electrode after being stripped；
S6, the thinning back side by epitaxial mesa, overleaf deposit anti-reflection film；
S7, N-type electrode is made using Lift-off.
Further, the step S1 is specifically included: plasma reinforced chemical vapour deposition is used, on the epitaxial wafer
One layer of composite dielectric film is grown, by photoetching process spin coating photoresist, after exposure development, falls compound Jie with hydrogen fluoride corrosion
Plasma membrane is cleaned up, and mesa etch exposure mask is left, so that it is determined that table top etching window out.
Further, in step S2, epitaxial wafer is performed etching according to mesa etch window, is etched away in the epitaxial wafer
Portion of buffer layer, absorbed layer, graded bedding, charge layer, dynode layer and contact layer；So as to form epitaxial mesa；For convenience
Description, epitaxial mesa namely table top of the invention.
Further, the raw material that the sulfuration process processing in the step S3 uses include (NH4)2S、(NH4)2Sx、
H2S, any one or a few in NaS, ZnS, passivation mode include wet chemistry reaction and magnetron sputtering.
It preferably, in the step S4 the use of hmds processing sidewall surfaces include using gas phase coating, molten
Liquid immerses, rotary coating mode etc..
A kind of low tracking current mesa-type photodetectors of the invention, including epitaxial mesa, under epitaxial mesa
Surface is deposited with anti-reflection film, and N electrode is formed on anti-reflection film；Matcoveredn is coated in epitaxial mesa upper surface；On the protection layer
Side's deposit metal film, forms P electrode；The epitaxial mesa includes substrate layer, and sequence is laminated in the buffering on the substrate
Layer, absorbed layer, graded bedding, charge layer, dynode layer and contact layer；The buffer layer, absorbed layer, graded bedding, charge layer, multiplication
Layer, contact layer and P-type electrode are concentric and radius is sequentially reduced, so that the mesa side walls formed are inclined surface.
Preferably, the material of the substrate layer, buffer layer, charge layer and dynode layer is InP, the material of the absorbed layer
Expect to be InGaAs, the material of the graded bedding and contact layer is InGaAsP.
Preferably, the buffer layer with a thickness of 0.1~1 μm；1~3 μm of the thickness of absorbed layer；Graded bedding with a thickness of
0.01~0.1 μm, charge layer with a thickness of 0.1~0.5 μm；The thickness of dynode layer and contact layer is 0.05~0.1 μm.
Preferably, the doping concentration of the buffer layer is less than 8 × 1017cm-3；The doping concentration of graded bedding be less than or equal to 1 ×
1017cm-3；The doping concentration of charge layer is 5 × 1016~5 × 1017cm-3；The doping concentration of dynode layer and contact layer is all larger than 1
×1019cm-3。
Compared with prior art, the present invention having the advantages that:
(1), the optimum selecting of corrosive liquid has isotropism to the corrosion of different materials, makes the side wall of epitaxial mesa not
There are material interface layering, the material interface of continuously smooth is conducive to mesa passivation.Simultaneously in wet etching course, reaction life
Easily removal is remained at object, will not cover or be adhered to side wall and hinder chemical reaction.
(2), it generates vulcanization passivation layer on the surface of the material using vulcanization reaction, can be effectively reduced material surface state.And lead to
The mode that over cure layer is combined with benzocyclobutene (BCB) can be obviously improved respectively as passivation layer and protection isolation layer
The long-time stability of sulfuric horizon.
(3), inorganic passivating film (Si3N4 and SiO2) is substituted using benzocyclobutene (BCB) and protects surface sulfide passivation layer,
With obvious beneficial effect.Firstly, avoiding energetic plasma in chemical vapor deposition (CVD) technique to vulcanization layer surface
The decomposition of sulfuric horizon under the conditions of bombardment or high growth temperature, caused passivation effect deterioration.Secondly, passing through hmds
(HMDS) improve surface adhesion, enhance the interfacial contact of sulfuric horizon and benzocyclobutene (BCB).Finally, benzocyclobutene
(BCB) solidification process can discharge gas unlike polyimide curing reaction, cause loose hole.Its solidification is not simple
The volatile matter that evaporates become solid, but in heat cure occur chemical reaction make molecular radical structure change, entirely reacted
There is no gas generation, more conducively protection vulcanization layer surface in journey.
(4), the mesa-type photodetectors that this method is prepared have under applying bias compared with low-dark current, and explanation has
Good surface state.Meanwhile dark current size is directly proportional to area, its main component of surface come self dark current, leakage current at
Divide very little, shows that this method has good passivation effect.
Detailed description of the invention
Fig. 1 is epitaxial material structure schematic diagram；
Fig. 2 is etching mesa technology schematic diagram；
The passivation of Fig. 3 surface sulfide and BCB protective layer process schematic representation；
Fig. 4 chip back process schematic representation；
In figure, 1, substrate layer, 2, buffer layer, 3, absorbed layer, 4, graded bedding, 5, charge layer, 6, dynode layer, 7, contact layer,
8, composite dielectric film, 9, P-type electrode, 10, protective layer, 11, anti-reflection film.
Specific embodiment
In order to make the objectives, technical solutions, and advantages of the present invention clearer, below in conjunction with attached drawing to of the invention real
The technical solution applied in example is clearly and completely described, it is clear that described embodiment is only that present invention a part is implemented
Example, instead of all the embodiments.
Embodiment 1
A kind of production method of low tracking current mesa-type photodetectors of the invention can be realized according to following scheme:
(1), it defines mesa etch window and mesa etch window is outputed by photoetching process in epitaxial wafer top layer deposition exposure mask
Mouthful；
(2), epitaxial wafer is etched by platform using wet etching, then carries out surface chemistry cleaning, removal wet etching is anti-
Answer residual product, oxide on surface, surface impurity pollutant.
(3), it is handled using sulfuration process, is passivated sidewall surfaces, reduces its surface state.
(4), surface enhanced adhesion is handled with hmds (HMDS), is coated with BCB.Under N2 atmosphere protection,
Using distribution elevated cure.
(5), P electrode is defined, metal film is deposited with evaporating or sputtering mode, forms P electrode figure after being stripped.
(6), thinning back side overleaf deposits anti-reflection film.
(7), N electrode is defined, N electrode is made using Lift-off, completes the production of photoelectric detector chip technique.
Etchant solution in the step (2) is required to meet:, material almost the same to the various corrosion rates to corrosion material
Expect interface continuous and derivable, solution corrosion rate stabilization is controllable, and reacts residual product and easily remove.
Surface chemistry cleaning in the step (2) includes organic solvent and weakly acidic solution, such as: ethyl alcohol, acetone, ice second
Acid, citric acid, the mixed solution of H2SO4 and hydrogen peroxide, hydrofluoric acid and ammonium fluoride mixed solution in any one or a few.
Sulfuration process raw material in the step (3) include: (NH4)2S、(NH4)2Sx、H2S, appointing in NaS, ZnS
Meaning is one or more of, and sulfur passivation mode includes wet chemistry reaction and magnetron sputtering.
Hmds (HMDS) surface treatment mode in the step (4) include: gas phase coating, solution immerse,
Rotary coating etc..After the completion of coating, about 1~5min is toasted under certain temperature (90~120 DEG C).
BCB in the step (4) is nonphotosensitive, can also be light sensitivity BCB.With good electrical insulation capability,
The features such as thermal stability, adhesiveness are good, resistance to water soak is good and stress is small.Its BCB solidification temperature is relatively low, and thermosetting is divided into 2
Reaction process is walked, after heat suffered by molecule reaches open loop energy, ring-opening reaction generation occurred for its four annulus of cyclobutane intermediate before this
Body.And then for open-loop products through thermal response and from addition polymerization, the polymer matrix for forming producing high-molecular realizes the solidification of BCB.
Embodiment 2
The present embodiment is column, epitaxial wafer with the table-board manufacture technology of avalanche photodide on the basis of embodiment 1
Structure includes as shown in Figure 1: N-type InP substrate 1；N-type InP buffer layer 2, with a thickness of 0.1~1 μm, doping concentration less than 8 ×
1017cm-3；It is non-to mix-InGaAs absorbed layer 3,1~3 μm of thickness；N-type InGaAsP graded bedding 4, with a thickness of 0.01~0.1 μm, mixes
Miscellaneous concentration is less than or equal to 1 × 1017cm-3；N-type InP charge layer 5, with a thickness of 0.1~0.5 μm, doping concentration is 5 × 1016~5
×1017cm-3；InP dynode layer 6, p-type-InGaAsP contact layer 7,0.05~0.1 μm of thickness, doping concentration is greater than 1 × 1019cm-3。
Specific preparation process is as follows:
(11) plasma reinforced chemical vapour deposition (PECVD) is used, grows layer of sin x/SiO2/ SiNx complex media
Film 8 after exposure development, is eroded deielectric-coating with HF, cleaned up, leave mesa etch by photoetching process spin coating photoresist
Exposure mask.Pass through one chip wet-method etching equipment bromine aqueous solution (HBr, H2O2And H2O composition) carry out table top molding etching, corrosion
20 DEG C of liquid temperature, time 4min, corrosion depth to N-type substrate, as shown in Figure 2.
(22) surface clean, deionized water rinses 5min and successively boils 3min with acetone, ethyl alcohol, molten in room temperature HF acid
Soaking 30sec in liquid removes surface organic matter and oxide, and wash by water 5min, drying.
(33) surface sulfide is passivated, and epitaxial wafer is placed in 60 DEG C of vulcanization amine aqueous solutions, impregnates 30min, on the surface of the material
Generate sulfuric horizon.Deionized water rinses 5min after taking-up, dries in nitrogen cylinder.
(44) 3min is immersed in HMDS solution, toasts 5min at 95 DEG C.
(55) AP3000, condition 4000RPM/30Sec are coated, BCB protective layer 10, condition 4000RPM/ are and then coated
30Sec.(wherein O2 content is less than 100ppm) under nitrogen protection, by heating curve: 50 DEG C of constant temperature 5min, it is every later to increase 50
DEG C constant temperature 15min, until constant temperature 60min at 260 DEG C of final solidification temperature.With 5200NJ photoresist, P is produced in exposed development
Type electrode pattern.Then plasma gas CF4:O2=90:60ml/min etches away BCB protective layer 10 under 150W power
Expose the quilting material of table top.
(66) electron beam evaporation platform is used, one layer of Ti/Pt/Au metal film is deposited at 80 DEG C, produces P with removing mode
Type electrode 9, as shown in Figure 3.
(77) layer of sin x after the thinning back side of table top, being grown as anti-reflection film 11, optical graving makes N electrode figure,
Anti-reflection film is eroded with hydrofluoric acid, after cleaning up.One layer of Cr/Au is deposited, N electrode is made by optical graving, completes technique system
Make, as shown in Figure 4.
Embodiment provided above has carried out further detailed description, institute to the object, technical solutions and advantages of the present invention
It should be understood that embodiment provided above is only the preferred embodiment of the present invention, be not intended to limit the invention, it is all
Any modification, equivalent substitution, improvement and etc. made for the present invention, should be included in the present invention within the spirit and principles in the present invention
Protection scope within.
Claims (9)
1. a kind of low tracking current mesa-type photodetectors, which is characterized in that including epitaxial mesa, under epitaxial mesa
Surface is deposited with anti-reflection film, and N electrode is formed on anti-reflection film；Matcoveredn is coated in epitaxial mesa upper surface；On the protection layer
Side's deposit metal film, forms P electrode；The epitaxial mesa includes substrate layer, and sequence is laminated in the buffering on the substrate
Layer, absorbed layer, graded bedding, charge layer, dynode layer and contact layer；The buffer layer, absorbed layer, graded bedding, charge layer, multiplication
Layer, contact layer and P-type electrode are concentric and radius is sequentially reduced, so that the mesa side walls formed are inclined surface.
2. a kind of low tracking current mesa-type photodetectors according to claim 1, which is characterized in that the substrate
Layer, buffer layer, charge layer and dynode layer material be InP, the material of the absorbed layer is InGaAs, the graded bedding with
And the material of contact layer is InGaAsP.
3. a kind of low tracking current mesa-type photodetectors according to claim 1, which is characterized in that the buffering
Layer with a thickness of 0.1~1 μm；1~3 μm of the thickness of absorbed layer；Graded bedding with a thickness of 0.01~0.1 μm, the thickness of charge layer
It is 0.1~0.5 μm；The thickness of dynode layer and contact layer is 0.05~0.1 μm.
4. a kind of low tracking current mesa-type photodetectors according to claim 1, which is characterized in that the buffering
The doping concentration of layer is less than 8 × 1017cm-3；The doping concentration of graded bedding is less than or equal to 1 × 1017cm-3；The doping concentration of charge layer
It is 5 × 1016~5 × 1017cm-3；The doping concentration of dynode layer and contact layer is all larger than 1 × 1019cm-3。
5. a kind of production method of low tracking current mesa-type photodetectors, which is characterized in that the method includes following
Step:
S1, the top layer deposition exposure mask in epitaxial wafer, output mesa etch window by photoetching process；
S2, the epitaxial wafer is etched by epitaxial mesa using wet etching, carries out surface chemistry cleaning, removal wet etching is anti-
Answer residual product, oxide on surface and impurity contamination object；
S3, it is handled using sulfuration process, is passivated the sidewall surfaces of epitaxial mesa, reduce its surface state；
S4, sidewall surfaces are handled using hmds, is coated with benzocyclobutene, form protective layer；It is protected in nitrogen atmosphere
Under shield, using distribution elevated cure；
S5, etched portions protective layer, keep the top of the epitaxial mesa exposed, according to evaporation or sputtering mode in the contact layer
Upper surface deposits metal film, forms P-type electrode after being stripped；
S6, the thinning back side by epitaxial mesa, overleaf deposit anti-reflection film；
S7, N-type electrode is made using Lift-off.
6. a kind of production method of low tracking current mesa-type photodetectors according to claim 5, feature exist
In the step S1 is specifically included: using plasma reinforced chemical vapour deposition, one layer of compound Jie is grown on the epitaxial wafer
Plasma membrane after exposure development, is fallen the composite dielectric film with hydrogen fluoride corrosion, is cleaned by photoetching process spin coating photoresist
Completely, mesa etch exposure mask is left, so that it is determined that table top etching window out.
7. a kind of production method of low tracking current mesa-type photodetectors according to claim 5, feature exist
In, in step S2, epitaxial wafer is performed etching according to mesa etch window, etch away portion of buffer layer in the epitaxial wafer,
Absorbed layer, graded bedding, charge layer, dynode layer and contact layer；So as to form epitaxial mesa.
8. a kind of production method of low tracking current mesa-type photodetectors according to claim 5, feature exist
In the raw material that the sulfuration process processing in the step S3 uses include (NH4)2S、(NH4)2Sx、H2S, in NaS, ZnS
Any one or a few, passivation mode includes wet chemistry reaction and magnetron sputtering.
9. a kind of production method of low tracking current mesa-type photodetectors according to claim 5, feature exist
In including using, gas phase coating, solution immerses the use hmds processing sidewall surfaces in the step S4, rotation applies
Mode for cloth.
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