CN109261582A - Grinding table cleaning device and its cleaning method - Google Patents
Grinding table cleaning device and its cleaning method Download PDFInfo
- Publication number
- CN109261582A CN109261582A CN201710586286.XA CN201710586286A CN109261582A CN 109261582 A CN109261582 A CN 109261582A CN 201710586286 A CN201710586286 A CN 201710586286A CN 109261582 A CN109261582 A CN 109261582A
- Authority
- CN
- China
- Prior art keywords
- grinding table
- cleaning
- cleaning case
- acid solution
- deionized water
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/02—Cleaning by the force of jets or sprays
- B08B3/022—Cleaning travelling work
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/34—Accessories
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B55/00—Safety devices for grinding or polishing machines; Accessories fitted to grinding or polishing machines for keeping tools or parts of the machine in good working condition
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Grinding-Machine Dressing And Accessory Apparatuses (AREA)
Abstract
The present invention provides a kind of grinding table cleaning device and its cleaning methods, for cleaning the alkaline slurries on grinding table, the grinding table is for grinding wafer, the grinding table includes chuck and the polishing cloth that is laid on the chuck, the grinding table cleaning device includes: the first cleaning case, for storing deionized water；Second cleaning case, for storing acid solution；Transfer pipeline is all connected with first cleaning case and second cleaning case, for conveying the acid solution in deionized water and the second cleaning case in the first cleaning case, and is sprayed on the grinding table, with the alkaline slurries cleaned on the grinding table.In grinding table cleaning device provided by the invention, it is provided with the first cleaning case and the second cleaning case simultaneously, deionized water and acid solution are conveyed respectively, to when cleaning grinding table, the lapping liquid of alkalinity can be neutralized using acid solution, it is thoroughly cleaned grinding table, avoids corrosion of the lapping liquid to wafer.
Description
Technical field
The present invention relates to technical field of semiconductors, in particular to a kind of grinding table cleaning device and its cleaning method.
Background technique
Wafer (Wafer) is the carrier for producing used in integrated circuits, is widely used in technical field of semiconductors, for crystalline substance
For member, the defect level of wafer surface is most important parameter.The most common defect of wafer is that occur ring-type among wafer
Differential interference, i.e., be linked to be cricoid shallow hole with will appear at Radius in wafer, inventor has found that these cricoid elementary errors are dry
Caused by relating to the alkaline slurries corrosion mainly as wafer during grinding technics.
Refering to fig. 1~4, wafer 3 is placed on a round chuck 1, has on chuck 1 several during grinding
A polishing cloth 2 is arranged for vacuumizing to adsorb wafer 3 in annular via on chuck, and the wafer 1 to be ground is placed on throwing
On light cloth 2, for protecting wafer, polishing cloth 2 is adhered on round chuck 1 polishing cloth 2, since polishing cloth 2 is porous material,
Negative-pressure sucking can be transmitted, while again since the material is soft for polishing cloth, can directly contact, make with wafer to avoid harder chuck
It is damaged at the back side.After wafer grinding, ground wafer is removed, polishing cloth 2 is cleaned using cleaning device 4, still
The lapping liquid of alkalinity between 1 edge of polishing cloth 2 and chuck is difficult to clean.When wafer is again placed on polishing cloth 2, polishing
Lapping liquid in cloth 2 easily corrodes wafer 3, forms cricoid shallow hole 31.
Chuck 1 can be rotated around the center of circle, and during Concentric rotation, alkaline lapping liquid can due to the effect of centrifugal force outward
Diffusion, however lapping liquids of these alkalinity are easier to be trapped between polishing cloth 2 and chuck 1, this annular region over time
The just region high at ph value, as shown in Figure 4.Whenever wafer 3 is contacted with the region, alkaline slurries will carry out wafer
Corrosion ultimately causes shallower pit, and assembles circlewise.
Existing solution includes:
1, increase the washing time to polishing cloth, rinse polishing cloth well as far as possible, but this can seriously affect production effect
Rate, and water consumption is big.
2, increase polishing cloth replacement frequency, the usage amount of polishing cloth certainly will be caused to increase in this way.
For this reason, it is necessary to provide a kind of cleaning device of grinding table to solve the problems, such as grinding corrosion wafer.
Summary of the invention
In view of this, the purpose of the present invention is to provide a kind of grinding table cleaning device and its cleaning method, to solve to grind
The problem of grinding platform corrosion wafer.
In order to solve the above technical problems, the present invention provides a kind of grinding table cleaning device, for cleaning the alkali on grinding table
Property lapping liquid, for grinding wafer, the grinding table cleaning device includes: the grinding table
First cleaning case, for storing deionized water；
Second cleaning case, for storing acid solution；
Transfer pipeline is all connected with first cleaning case and second cleaning case, for conveying first cleaning
The acid solution in deionized water and second cleaning case in case, and be sprayed on the grinding table, to be ground described in cleaning
Grind the alkaline slurries on platform.
Optionally, the acid solution include one of hydrochloric acid solution, hydrogen fluoride solution or buffered hydrofluoric acid solution or
It is several.
Optionally, the transfer pipeline includes central conduit, one end of the central conduit and first cleaning case and
Second cleaning case is connected to, and the other end of the central conduit is located at the center of the grinding table.
Optionally, the transfer pipeline further includes edge pipeline, and one end of the edge pipeline and the central conduit connect
Logical, the other end of the edge pipeline is located at the marginal position of the grinding table.
Optionally, it is provided with first switch control valve on the transfer pipeline, it is described for controlling the conveying of deionized water
First switch control valve is located at the water outlet of first cleaning case.
Optionally, it is provided with second switch control valve on the transfer pipeline, it is described for controlling the conveying of acid solution
Second switch control valve is located at the water outlet of second cleaning case.
Optionally, the grinding table cleaning device further include:
First water pump, for the deionized water in first cleaning case to be pumped into the transfer pipeline；
Second water pump, for the acid solution in second cleaning case to be pumped into the transfer pipeline；
First water pump is located in first cleaning case, and second water pump is located in second cleaning case.
Optionally, the range of the pH value of the acid solution is 5~6.5.
To solve the above-mentioned problems, the present invention also provides a kind of cleaning methods of grinding table, and the grinding table is for grinding
Wafer, comprising the following steps:
S1, while the acid solution in the deionized water and the second cleaning case in the first cleaning case is conveyed, and utilize conveying
It is cleaned on water pipe line spraying to the grinding table；
S2, the first preset time of cleaning stop conveying acid solution, are only cleaned with deionized water to grinding table；
S3 is simultaneously stopped conveying deionized water and acid solution after cleaning the second preset time.
Optionally, first preset time is 3 seconds~5 seconds.
Optionally, second preset time is 3 seconds~5 seconds.
In grinding table cleaning device provided by the invention, while it being provided with the first cleaning case and the second cleaning case, respectively
Deionized water and acid solution are conveyed, to can neutralize the lapping liquid of alkalinity using acid solution when cleaning grinding table, make
Grinding table is thoroughly cleaned, and avoids corrosion of the lapping liquid to wafer.
In the cleaning method of grinding table provided by the invention, grinding is first cleaned simultaneously with deionized water and acid solution
Platform has completely removed the acid solution on grinding table, and is individually cleaned with deionized water to grinding table, guarantees on grinding table
Wafer not by sour corrosion.
Detailed description of the invention
Fig. 1 is positional diagram of the wafer in grinding with polishing cloth and chuck in the prior art；
Fig. 2 is the schematic diagram of cleaning device cleaning grinding table in the prior art；
Fig. 3 is the schematic diagram for grinding corrosion wafer in the prior art；
Fig. 4 is the position view that lapping liquid is easily collected on chuck；
Fig. 5 is the schematic diagram of grinding table cleaning device cleaning grinding table in one embodiment of the application；
Fig. 6 is the schematic diagram of grinding table cleaning device cleaning grinding table in another embodiment of the application；
In Fig. 1~4: 1- chuck；2- polishing cloth；3- wafer；31- ring-type shallow hole；4- cleaning device；
In Fig. 5~Fig. 6: 10- chuck；20- polishing cloth；The first cleaning case of 30-；31- first switch control valve；40- second
Cleaning case；41- second switch control valve；50- transfer pipeline；51- central conduit；The edge 52- pipeline.
Specific embodiment
Below in conjunction with the drawings and specific embodiments to grinding table cleaning device proposed by the present invention and its cleaning method make into
One step is described in detail.According to claims and following explanation, advantages and features of the invention will be become apparent from.It should be noted that
Attached drawing is all made of very simplified form and using non-accurate ratio, only to convenient, lucidly aid illustration is of the invention
The purpose of embodiment.
Embodiment one
Refering to Fig. 5, the present embodiment provides a kind of grinding table cleaning devices, for cleaning the alkaline slurries on grinding table,
The grinding table is for grinding wafer, and grinding table includes chuck 10 and the polishing cloth 20 that is laid on chuck 10, the grinding table
Cleaning device includes: the first cleaning case 30, for storing deionized water；Second cleaning case 40, for storing acid solution；And
Transfer pipeline 50, transfer pipeline 50 are all connected with the first cleaning case 30 and the second cleaning case 40, for conveying the first cleaning case 30
In deionized water and the second cleaning case 40 in acid solution, and be sprayed on grinding table, to clean the alkalinity on grinding table
Lapping liquid.Due to for grinding wafer lapping liquid present alkalinity, so using acid solution add deionized water to grinding table into
Row cleaning, can neutralize partial alkaline lapping liquid, to reduce the corrosion to wafer.
Wherein, the acid solution is hydrochloric acid solution (HCl), hydrogen fluoride solution (HF) or buffered hydrofluoric acid solution (hydrogen fluorine
Acid and ammonium fluoride), and acid solution is weak acid, the range of pH value is 5~6.5, and specific pH value can be according to alkaline slurries
PH value is adaptively adjusted.The reason of using weak acid: it is on the one hand to then be easy convenient for storage and conveying according to strong acid
Corrode the second cleaning case 40 and transfer pipeline 50, the second cleaning case 40 and transfer pipeline for needing to select corrosion resistance strong
50, to will increase cost, if on the other hand control is improper, strong acid can corrode grinding table instead, keep the pH value of grinding table less than normal,
To cause to carry out sour corrosion to wafer.
Preferably, hydrogen fluoride solution (HF) can be selected in acid solution, using hydrogen fluoride solution (HF) by silica
(SiO2) material lapping liquid erosion removal.
Further, transfer pipeline 50 includes central conduit 51, one end of central conduit 51 and the first cleaning case 30 and the
Two cleaning cases 40 are connected to, and the other end of central conduit 51 is located at the center of grinding table, and cleaning solution is from grinding table
Heart position is sprayed around, to achieve the purpose that clean grinding table.
Refering to Fig. 6, in order to preferably clean the marginal portion of wafer, transfer pipeline 50 further includes two edge pipelines 52,
One end of edge pipeline 52 is connected to central conduit 51, and the other end of edge pipeline 52 is located at the marginal position of grinding table, spout
Inclination downward, thoroughly cleans the marginal portion of wafer.
In order to control deionized water conveying on-off and conveying uninterrupted, is provided on transfer pipeline 50
One switching control pilot 31, for controlling the conveying of deionized water, the valve processed of first switch control 31 is located at the water outlet of the first cleaning case 30
Mouthful.Further, in order to control acid solution conveying on-off and conveying uninterrupted, also set up on transfer pipeline 50
There is second switch control valve 41, for controlling the conveying of acid solution, second switch control valve 41 is located at the second cleaning case 40
Water outlet.
In grinding table cleaning device provided in this embodiment further include: the first water pump (is shown) in figure, is used for institute
It states the deionized water in the first cleaning case 30 and is pumped into the transfer pipeline 50；Second water pump (is shown) in figure, and being used for will be described
Acid solution in second cleaning case 40 is pumped into the transfer pipeline 50；First water pump is located in the first cleaning case 30, the second water
Pump is located in the second cleaning case 40.
Certainly, those skilled in the art can also design other water pumping modes according to specific application environment, or save first
Water pump and the second water pump convey cleaning solution (deionized water and acid solution) using gravitional force.
Embodiment two
Based on above-mentioned grinding table cleaning device, the present embodiment provides a kind of cleaning methods of grinding table, for cleaning grinding
Alkaline slurries on platform, for grinding table for grinding wafer, the grinding table includes chuck 10 and the throwing that is laid on chuck 10
Light cloth 20, specific cleaning method the following steps are included:
S1, while the acid solution in the deionized water and the second cleaning case 40 in the first cleaning case 30 is conveyed, and utilize
Transfer pipeline 50 is sprayed on grinding table and is cleaned；
Wherein, the flow that deionized water is controlled using first switch control valve 31 is controlled using second switch control valve 41
After the flow of acid solution, acid solution and deionized water mix in transfer pipeline 50, the weak acid with certain pH value is formed
Solution, specific pH value can be controlled by two switching control pilots by the flow of control deionized water or acid solution.
S2, the first preset time of cleaning stop conveying acid solution, are only cleaned with deionized water to grinding table；
The purpose of this step is that the grinding table after making cleaning keeps neutral as far as possible, avoids excessive acid solution on grinding table
It retains, and is difficult to be neutralized with lapping liquid, to cause sour corrosion to wafer.
S3 is simultaneously stopped conveying deionized water and acid solution after cleaning the second preset time；
Cleaning is completed, and after the completion of the grinding of next wafer, repeats S1~S3.
Wherein, first preset time is 3 seconds~5 seconds；Second preset time is 3 seconds~5 seconds.
In conclusion in grinding table cleaning device provided by the invention, while being provided with the first cleaning case and second clearly
Tank-washer conveys deionized water and acid solution respectively, to can neutralize alkalinity using acid solution when cleaning grinding table
Lapping liquid is thoroughly cleaned grinding table, avoids corrosion of the lapping liquid to wafer.
In the cleaning method of grinding table provided by the invention, grinding is first cleaned simultaneously with deionized water and acid solution
Platform has completely removed the acid solution on grinding table, and is individually cleaned with deionized water to grinding table, guarantees on grinding table
Wafer not by sour corrosion.
Each embodiment in this specification is described in a progressive manner, the highlights of each of the examples are with other
The difference of embodiment, the same or similar parts in each embodiment may refer to each other.For system disclosed in embodiment
For, due to corresponding to the methods disclosed in the examples, so being described relatively simple, related place is referring to method part illustration
?.
Foregoing description is only the description to present pre-ferred embodiments, not to any restriction of the scope of the invention, this hair
Any change, the modification that the those of ordinary skill in bright field does according to the disclosure above content, belong to the protection of claims
Range.
Claims (11)
1. a kind of grinding table cleaning device, for cleaning the alkaline slurries on grinding table, the grinding table is used to grind wafer,
It is characterized in that, the grinding table cleaning device includes:
First cleaning case, for storing deionized water；
Second cleaning case, for storing acid solution；
Transfer pipeline is all connected with first cleaning case and second cleaning case, for conveying in first cleaning case
Deionized water and second cleaning case in acid solution, and be sprayed on the grinding table, to clean the grinding table
On alkaline slurries.
2. grinding table cleaning device as described in claim 1, which is characterized in that the acid solution includes hydrochloric acid solution, fluorine
Change one or more of hydrogen solution or buffered hydrofluoric acid solution.
3. grinding table cleaning device as described in claim 1, which is characterized in that the transfer pipeline includes central conduit, institute
The one end for stating central conduit is connected to first cleaning case and second cleaning case, the other end position of the central conduit
In the center of the grinding table.
4. grinding table cleaning device as claimed in claim 3, which is characterized in that the transfer pipeline further includes edge pipeline,
One end of the edge pipeline is connected to the central conduit, and the other end of the edge pipeline is located at the edge of the grinding table
Position.
5. grinding table cleaning device as described in claim 1, which is characterized in that be provided with first switch on the transfer pipeline
Control valve, for controlling the conveying of deionized water, the first switch control valve is located at the water outlet of first cleaning case.
6. grinding table cleaning device as described in claim 1, which is characterized in that be provided with second switch on the transfer pipeline
Control valve, for controlling the conveying of acid solution, the second switch control valve is located at the water outlet of second cleaning case.
7. grinding table cleaning device as described in claim 1, which is characterized in that further include:
First water pump, for the deionized water in first cleaning case to be pumped into the transfer pipeline；
Second water pump, for the acid solution in second cleaning case to be pumped into the transfer pipeline；
First water pump is located in first cleaning case, and second water pump is located in second cleaning case.
8. grinding table cleaning device as described in claim 1, which is characterized in that the range of the pH value of the acid solution is 5
~6.5.
9. a kind of cleaning method of grinding table, the grinding table is for grinding wafer, which comprises the following steps:
S1, while the acid solution in the deionized water and the second cleaning case in the first cleaning case is conveyed, and utilize transfer pipeline
It is sprayed on the grinding table and is cleaned；
S2, the first preset time of cleaning stop conveying acid solution, are only cleaned with deionized water to grinding table；
S3 is simultaneously stopped conveying deionized water and acid solution after cleaning the second preset time.
10. the cleaning method of grinding table as claimed in claim 9, which is characterized in that first preset time is 3 seconds~5
Second.
11. the cleaning method of grinding table as claimed in claim 9, which is characterized in that second preset time is 3 seconds~5
Second.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710586286.XA CN109261582A (en) | 2017-07-18 | 2017-07-18 | Grinding table cleaning device and its cleaning method |
| TW106141267A TW201908024A (en) | 2017-07-18 | 2017-11-28 | Grinding table cleaning device and cleaning method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710586286.XA CN109261582A (en) | 2017-07-18 | 2017-07-18 | Grinding table cleaning device and its cleaning method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109261582A true CN109261582A (en) | 2019-01-25 |
Family
ID=65152585
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710586286.XA Pending CN109261582A (en) | 2017-07-18 | 2017-07-18 | Grinding table cleaning device and its cleaning method |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN109261582A (en) |
| TW (1) | TW201908024A (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050206005A1 (en) * | 1999-12-31 | 2005-09-22 | Buehler Mark F | Composition and a method for defect reduction |
| CN101439494A (en) * | 2007-11-22 | 2009-05-27 | 上海华虹Nec电子有限公司 | Cleaner for CMP equipment grinding head |
| CN102157368A (en) * | 2010-02-11 | 2011-08-17 | 中芯国际集成电路制造(上海)有限公司 | Method for removing residues after chemical mechanical polishing |
| CN102554748A (en) * | 2010-12-23 | 2012-07-11 | 中芯国际集成电路制造(北京)有限公司 | Polishing method |
| CN105474367A (en) * | 2013-08-28 | 2016-04-06 | 胜高科技股份有限公司 | Method and device for polishing semiconductor wafer |
-
2017
- 2017-07-18 CN CN201710586286.XA patent/CN109261582A/en active Pending
- 2017-11-28 TW TW106141267A patent/TW201908024A/en unknown
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050206005A1 (en) * | 1999-12-31 | 2005-09-22 | Buehler Mark F | Composition and a method for defect reduction |
| CN101439494A (en) * | 2007-11-22 | 2009-05-27 | 上海华虹Nec电子有限公司 | Cleaner for CMP equipment grinding head |
| CN102157368A (en) * | 2010-02-11 | 2011-08-17 | 中芯国际集成电路制造(上海)有限公司 | Method for removing residues after chemical mechanical polishing |
| CN102554748A (en) * | 2010-12-23 | 2012-07-11 | 中芯国际集成电路制造(北京)有限公司 | Polishing method |
| CN105474367A (en) * | 2013-08-28 | 2016-04-06 | 胜高科技股份有限公司 | Method and device for polishing semiconductor wafer |
Non-Patent Citations (1)
| Title |
|---|
| 刘玉岭: "《超大规模集成电路衬底材料性能及加工测试技术工程》", 31 August 2002 * |
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| Publication number | Publication date |
|---|---|
| TW201908024A (en) | 2019-03-01 |
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Application publication date: 20190125 |