CN109031821A - Thin-film transistor array base-plate, display screen and electronic equipment - Google Patents
Thin-film transistor array base-plate, display screen and electronic equipment Download PDFInfo
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- CN109031821A CN109031821A CN201810732209.5A CN201810732209A CN109031821A CN 109031821 A CN109031821 A CN 109031821A CN 201810732209 A CN201810732209 A CN 201810732209A CN 109031821 A CN109031821 A CN 109031821A
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- 239000010409 thin film Substances 0.000 title claims abstract description 81
- 239000010410 layer Substances 0.000 claims abstract description 151
- 239000011241 protective layer Substances 0.000 claims abstract description 31
- 239000011521 glass Substances 0.000 claims abstract description 30
- 239000000758 substrate Substances 0.000 claims abstract description 29
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 17
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 15
- 238000009413 insulation Methods 0.000 claims description 15
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 15
- 239000011159 matrix material Substances 0.000 claims description 8
- 239000010408 film Substances 0.000 claims description 4
- 230000005540 biological transmission Effects 0.000 abstract description 11
- 239000004973 liquid crystal related substance Substances 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910003978 SiClx Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 238000005549 size reduction Methods 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Optics & Photonics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Thin Film Transistor (AREA)
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
The present invention provides a kind of thin-film transistor array base-plate, display screen and electronic equipments; wherein; thin-film transistor array base-plate includes glass substrate, refracting layer, the first protective layer, thin film transistor (TFT), dielectric layer, data line, the second protective layer, insulating layer, pixel electrode; thin film transistor (TFT) is connect with data line; the orthographic projection region of at least part covering data line of at least part covering thin film transistor (TFT) orthographic projection region on the glass substrate of refracting layer and refracting layer on the glass substrate.Thin-film transistor array base-plate provided by the invention, multiple reflections, the refraction of backlight are realized using the refractive index difference between refracting layer and glass substrate, the data line and the light under thin film transistor (TFT) shielded area for making thin-film transistor array base-plate enter pixel openings area, to improve the light transmission rate of the display screen with the thin-film transistor array base-plate, under identical power consumption, the display brightness of display screen is improved, and then increases the competitiveness of product in market.
Description
Technical field
The present invention relates to field of display technology, in particular to a kind of thin-film transistor array base-plate and have film
The display screen of transistor (TFT) array substrate and electronic equipment with the display screen.
Background technique
The present invention belongs to the relevant technologies related to the present invention for the description of background technique, be only used for explanation and just
In understanding summary of the invention of the invention, it should not be construed as applicant and be specifically identified to or estimate applicant being considered of the invention for the first time
The prior art for the applying date filed an application.
Currently, the method for liquid crystal display (Liquid Crystal Display, LCD) raising transmitance is main in the market
It is to reduce black matrix" (Black Matrix, BM) width and support column dimension, improves pixel aperture ratio, but may cause display
Shield the risks such as light leakage and colour contamination, moreover, after support column size reduction, the anti-face pressure reduced capability of display screen is easy to appear yellow group not
It is good.In existing scheme, the aperture opening ratio of 5.5 inches of full HD (Full High Definition, FHD) panels (Panel) is about
The area of 48%-55%, a pixel 50% or so are accounted for by thin film transistor (TFT) (Thin Film Transistor, TFT) and BM
With, it is remaining to be only for backlight past area thoroughly, so the light 50% or so that backlight issues is absorbed by TFT element and BM,
This part light occupies power consumption and without promoting display brightness.
Summary of the invention
In order to solve the problems, such as it is above-mentioned one of at least, the present invention provides a kind of thin-film transistor array base-plates, including glass
Substrate, being cascading on the glass substrate has refracting layer, the first protective layer, gate insulation layer, dielectric layer, the second protective layer
And insulating layer；The thin film transistor (TFT) of multiple array settings, is formed between first protective layer and second protective layer, often
One thin film transistor (TFT) includes grid, source electrode and drain electrode, and the grid is formed in the dielectric layer and the gate insulation layer
Between, the source electrode and drain electrode is formed in second protective layer；A plurality of spaced data line, is formed in described second
In insulating layer, data line described in each is connect by one first via hole with the source electrode of a thin film transistor (TFT)；With multiple pictures
Plain electrode is formed on the insulating layer, and each pixel electrode passes through one second via hole and a thin film transistor (TFT)
Drain electrode connection；Wherein, at least part of the refracting layer covers the multiple thin film transistor (TFT) on the glass substrate
At least part of orthographic projection region and the refracting layer covers orthographic projection of the multiple data lines on the glass substrate
Region, the refracting layer is for reflecting the backlight blocked by the thin film transistor (TFT) and the data line.
Thin-film transistor array base-plate provided by the invention, it is real using the refractive index difference between refracting layer and glass substrate
The multiple reflections of existing backlight, refraction, the data line and the light under thin film transistor (TFT) shielded area for making thin-film transistor array base-plate
Pixel openings area is entered, so that the light transmission rate of the display screen with the thin-film transistor array base-plate is improved, identical
Under power consumption, the display brightness of display screen is improved, and then increase the competitiveness of product in market.
Additional aspect and advantage of the invention will become obviously in following description section, or practice through the invention
Recognize.
Detailed description of the invention
Above-mentioned and/or additional aspect of the invention and advantage will become from the description of the embodiment in conjunction with the following figures
Obviously and it is readily appreciated that, in which:
Fig. 1 is the partial structural diagram of thin-film transistor array base-plate of the present invention；
Fig. 2 be in Fig. 1 A-A to the first schematic cross-sectional view；
Fig. 3 is the first schematic cross-sectional view of B-B direction in Fig. 1；
Fig. 4 be in Fig. 1 A-A to second of schematic cross-sectional view；
Fig. 5 is second of schematic cross-sectional view of B-B direction in Fig. 1；
Fig. 6 be display screen of the present invention first cut open to structural schematic diagram；
Fig. 7 be display screen of the present invention second cut open to structural schematic diagram.
Wherein, corresponding relationship of the Fig. 1 into Fig. 7 between appended drawing reference and component names are as follows:
10 glass substrates, 20 refracting layers, 21 silicon nitride layers, 22 silicon oxide layers, 30 thin film transistor (TFT)s, 31 drain electrodes, 32 source electrodes,
33 active layers, 34 gate insulation layers, 40 loopholes, 50 pixel electrodes, 60 data lines, 70 light shield layers, 80 first protective layers, 90 second
Protective layer, 101 public electrodes, 102 insulating layers, 103 dielectric layers, 104 second via holes, 105 first via holes, 100 thin film transistor (TFT)s
Array substrate, 200 backlight modules, 300 colored filters, 301 black matrix"s, 302 color layers, 303 glass plates, 304 protective layers,
400 open regions.
Wherein, Fig. 1 section line part is thin film transistor (TFT) and data line shading light part.
Specific embodiment
To better understand the objects, features and advantages of the present invention, with reference to the accompanying drawing and specific real
Applying mode, the present invention is further described in detail.It should be noted that in the absence of conflict, the implementation of the application
Feature in example and embodiment can be combined with each other.
In the following description, numerous specific details are set forth in order to facilitate a full understanding of the present invention, still, the present invention may be used also
To be implemented using other than the one described here other modes, therefore, protection scope of the present invention is not by described below
Specific embodiment limitation.
Following the discussion provides multiple embodiments of the invention.Although each embodiment represents the single combination of invention,
But different embodiments of the invention can replace, or merge combination, therefore the present invention is it is also contemplated that comprising documented identical
And/or all possible combinations of different embodiments.Thus, if one embodiment includes A, B, C, another embodiment includes B
With the combination of D, then the present invention also should be regarded as including the every other possible combined realities of one or more containing A, B, C, D
Example is applied, although the embodiment may not have specific literature record in the following contents.
As shown in Figure 1, thin-film transistor array base-plate 100 is divided into grid by data line 60 and grid line (not shown)
The multiple thin film transistor regions and multiple pixel openings areas 400 of arrangement, are provided with a film crystalline substance in each thin film transistor region
Body pipe 30.
As shown in Figures 2 and 3, the thin-film transistor array base-plate 100 that the embodiment of first aspect present invention provides, including
Thin film transistor (TFT) 30, the dielectric layer that glass substrate 10, refracting layer 20, light shield layer 70, the first protective layer 80, multiple arrays are arranged
103, data line 60, the second protective layer 90, public electrode 101, insulating layer 102, pixel electrode 50, the second via hole 104, the first mistake
Hole 105.
Specifically, thin film transistor (TFT) 30 includes the active layer 33 being cascading, gate insulation layer 34, drain electrode 31, source electrode
32, grid (not shown), source electrode 32 and drain electrode 31 are connect with active layer 33 respectively, and grid setting is in drain electrode 31 and source electrode 32
Between；Refracting layer 20 is arranged on the glass substrate 10, and light shield layer 70 is arranged on refracting layer 20, and the setting of the first protective layer 80 is being rolled over
It penetrates on layer 20, and covers light shield layer 70, active layer 33 is arranged on the first protective layer 80, and the setting of gate insulation layer 34 is in the first protection
On layer 80, and active layer 33 is covered, grid is arranged on gate insulation layer 34, and dielectric layer 103 is arranged on gate insulation layer 34, and covers
It is provided with drain/source hole on lid grid, gate insulation layer 34 and dielectric layer 103, drain electrode 31 or source are formed in drain/source hole
Pole 32, grid are located between source electrode 32 and drain electrode 31, data line 60 be arranged on dielectric layer 103 and by the first via hole 105 with
Source electrode 32 connects, and the second protective layer 90 is arranged on dielectric layer 103, and covers drain electrode 31, source electrode 32, data line 60, common electrical
Pole 101 is arranged on the second protective layer 90, and insulating layer 102 is arranged on public electrode 101, and pixel electrode 50 is arranged in insulating layer
It on 102, and is connect by the second via hole 104 with drain electrode 31, pixel electrode 50 is arranged in pixel openings area 400；Refracting layer 20
At least part covers at least one of multiple thin film transistor (TFT)s 30 orthographic projection region on the glass substrate 10 and refracting layer 20
Divide the orthographic projection region of covering multiple data lines 60 on the glass substrate 10, refracting layer 20 is used for 30 sum number of birefringent thin film transistor
The backlight blocked according to line 60.
Thin-film transistor array base-plate provided by the invention utilizes the refringence between refracting layer 20 and glass substrate 10
The multiple reflections of different realization backlight, refraction, make under the data line and thin film transistor (TFT) shielded area of thin-film transistor array base-plate
Light enter pixel openings area 400, to improve the light transmission rate of the display screen with the thin-film transistor array base-plate,
Under identical power consumption, the display brightness of display screen is improved, and then increase the competitiveness of product in market.
As shown in Fig. 2, the setting of refracting layer 20 is on the glass substrate 10, the first protective layer 80 is arranged on refracting layer 20, grid
Insulating layer 34 is arranged on the first protective layer 80, and dielectric layer 103 is arranged on gate insulation layer 34, and data line 60 is arranged in dielectric layer
It is connect on 103 and by the first via hole 105 with source electrode 32, the second protective layer 90 is arranged on dielectric layer 103, and covers data line
60, public electrode 101 is arranged on the second protective layer 90, and insulating layer 102 is arranged on public electrode 101, and pixel electrode 50 is set
It sets on insulating layer 102.
As shown in figure 3, the setting of refracting layer 20 is on the glass substrate 10, light shield layer 70 is arranged on refracting layer 20, and first protects
Sheath 80 is arranged on refracting layer 20, and covers light shield layer 70, and active layer 33 is arranged on the first protective layer 80, gate insulation layer 34
It is arranged on the first protective layer 80, and covers active layer 33, grid (not shown) is arranged on gate insulation layer 34, dielectric layer
103 are arranged on gate insulation layer 34, and cover grid, are provided on gate insulation layer 34 and dielectric layer 103 and pass through drain/source hole,
Drain electrode 31 or source electrode 32 are formed in drain/source hole, grid is located between source electrode 32 and drain electrode 31, the setting of the second protective layer 90
On dielectric layer 103, and drain electrode 31, source electrode 32 are covered, public electrode 101 is arranged on the second protective layer 90, and insulating layer 102 is set
It sets in public electrode 101
On, pixel electrode 50 is arranged on insulating layer 102, and is connect by the second via hole 104 with drain electrode 31.Refracting layer 20
It is correspondingly arranged with thin film transistor (TFT) 30, i.e. projection of the thin film transistor (TFT) 30 on refracting layer 20 is overlapped with refracting layer 20, makes film
Light under transistor shielded area enters pixel openings area 400, to improve with the thin-film transistor array base-plate
The light transmission rate of display screen improves the display brightness of display screen under identical power consumption, and then increases the market competition of product
Power.
In one embodiment of the invention, as shown in Figures 2 and 3, refracting layer 20 includes multiple sublayers；Sublayer includes nitrogen
SiClx layer 21 and silicon oxide layer 22, silicon nitride layer 21 are arranged alternately with silicon oxide layer 22；Utilize silicon nitride layer 21 and silicon oxide layer
Refraction variation between 22, light enter after refracting layer 20 the multiple refraction for passing through silicon nitride layer 21 and silicon oxide layer 22, make more
Light enter pixel openings, to make more to be utilized by data line and the backlight that thin film transistor (TFT) blocks, that is, improve
The utilization rate of light improves the display brightness of the display screen with the thin-film transistor array base-plate, and then increases product
The market competitiveness.
In one embodiment of the invention, the sublayer connecting in refracting layer 20 with glass substrate 10 is silicon nitride layer 21；
The anaclasis that more glass substrates 10 reflect can be entered refracting layer by silicon nitride, then the silicon nitride layer by being arranged alternately
21 with the reflection and refraction of silicon oxide layer 22, make more to be utilized by data line with the backlight that thin film transistor (TFT) blocks and enter
Pixel openings further improve the light transmission rate of display screen to improve the utilization rate of light, improve the display of display screen
Brightness, and then increase the competitiveness of product in market.
In one embodiment of the invention, as shown in Figures 2 and 3, refracting layer 20 includes 2~6 sublayers；The layer of sublayer
Number within the above range, under the depth information for guaranteeing thin-film transistor array base-plate, can effectively enter anaclasis
Pixel openings, to improve the utilization rate of light, the light for improving the display screen with the thin-film transistor array base-plate is penetrated
Rate improves the display brightness of display screen, and then increases the competitiveness of product in market.Refracting layer 20 includes 4 sublayers.
In one embodiment of the invention, refracting layer 20 includes 2n sublayer, and n is non-zero natural number；Refracting layer 20 wraps
Even number sublayer is included, keeps silicon oxide layer 22 identical with the number of plies of silicon nitride layer 21, makes full use of silicon oxide layer 22 and silicon nitride layer
21 refractive index difference realizes the multiple reflections of light, refraction, so that more anaclasis is entered pixel openings area 400, to mention
The high light transmission rate of the display screen with the thin-film transistor array base-plate, improves the display brightness of display screen, Jin Erzeng
The competitiveness of product in market is added.
In one embodiment of the invention, the thickness of sublayer are as follows: D=550/ (4N) nm；D is the thickness of sublayer, and N is son
The refractive index of layer；The thickness of sublayer is calculated by above-mentioned formula, the reflectivity of sublayer is passing through 22 He of silicon oxide layer up to 50%
The refractive index difference of silicon nitride layer 21 realizes the multiple reflections of light, refraction, anaclasis effectively can be entered pixel openings,
To improve the utilization rate of light, the light transmission rate of the display screen with the thin-film transistor array base-plate is improved, is improved
The display brightness of display screen, and then increase the competitiveness of product in market.
In one embodiment of the invention, as shown in Figure 2 and Figure 4, multiple loopholes 40 are provided on refracting layer 20, thoroughly
Unthreaded hole 40 is correspondingly arranged with pixel electrode 50；The region that pixel electrode 50 is arranged is pixel openings area 400, and loophole 40 is set
It sets, on the one hand, be correspondingly arranged refracting layer 20 with data line 60, i.e. projection of the data line 60 on refracting layer 20 and refracting layer 20
It is overlapped, the backlight that data line 60 blocks is entered in pixel openings area, to improve with the thin-film transistor array base-plate
The light transmission rate of display screen improve the display brightness of display screen under identical power consumption, and then the market for increasing product is competing
Power is striven, on the other hand, ensure that light is directly shot out from open region by loophole 40, avoid the folding of 20 pairs of light of refracting layer
The case where penetrating, reflect and absorb, the light projected from pixel openings is caused to reduce, even if more light enter pixel and open
Mouthful, to improve the utilization rate of light, the display brightness of display screen is improved, and then increase the competitiveness of product in market.
The manufacturing process of refracting layer in the present invention are as follows: refracting layer, tool are formed by chemical meteorology deposition on the glass substrate
Body, alternating chemistries vapor phase deposition silicon nitride and silicon oxide layer form refracting layer on the glass substrate, using exposure, development,
Etching and removing form loophole.
In one embodiment of the invention, as shown in Figure 4 and Figure 5, refracting layer 20 is silicon nitride layer 21 or silicon oxide layer
22.Reflection, the refraction of backlight are realized using the refractive index difference between silicon nitride layer 21 or silicon oxide layer 22 and glass substrate 10,
The data line and the light under thin film transistor (TFT) shielded area for making thin-film transistor array base-plate enter pixel openings area 400, from
And the light transmission rate of the display screen with the thin-film transistor array base-plate is improved, under identical power consumption, improve display screen
Display brightness, and then increase the competitiveness of product in market.
In one embodiment of the invention, refracting layer 20 is directly directly contacted with thin film transistor (TFT) 30, in this way can be more
The backlight that good birefringent thin film transistor and data line blocks, makes more light enter pixel openings area 400, to improve
The light transmission rate of display screen with the thin-film transistor array base-plate improves the display brightness of display screen, and then increases
The competitiveness of product in market.
As shown in Figure 6 and Figure 7, a kind of display screen that the embodiment of second aspect of the present invention provides, including stack gradually and set
Backlight module 200, thin-film transistor array base-plate 100 and the colored filter 300 set；Wherein, thin-film transistor array base-plate
100 be the thin-film transistor array base-plate 100 of any of the above-described.
The display screen that second aspect of the present invention provides includes the whole for the thin-film transistor array base-plate that first aspect provides
Feature and beneficial effect are not just repeating herein.
As shown in Figure 6 and Figure 7, in one embodiment of the invention, colored filter 300 include: black matrix" 301,
Color layer 302, glass plate 303 and protective layer 304, the data line 60 of black matrix" 301 and thin-film transistor array base-plate 100 and
Thin film transistor (TFT) 30 is correspondingly arranged；Reduce the absorption of 301 pairs of light of black matrix" and block, makes more light from pixel openings area
400 project, to improve the light transmission rate of display screen, improve the display brightness of display screen, and then increase the city of product
Field competitiveness.
In one embodiment of the invention, display screen include In-cell screen, On-cell screen, GFF screen or
Other mode liquid crystal display screens (Liquid Crystal Display, LCD) etc., just do not enumerate herein.
The embodiment of third aspect present invention provides a kind of electronic equipment, including above-mentioned display screen.
The electronic equipment that third aspect present invention provides includes the whole features for the display screen that second aspect provides, herein
Just do not repeating.
In one embodiment of the invention, electronic equipment may include mobile phone, tablet computer, laptop etc., herein
Just do not enumerate.
In the present invention, term " multiple " then refers to two or more, unless otherwise restricted clearly.For this field
Those of ordinary skill for, the specific meanings of the above terms in the present invention can be understood according to specific conditions.
In the description of this specification, the description of term " one embodiment ", " some embodiments ", " specific embodiment " etc.
Mean that particular features, structures, materials, or characteristics described in conjunction with this embodiment or example are contained at least one reality of the invention
It applies in example or example.In the present specification, schematic expression of the above terms are not necessarily referring to identical embodiment or reality
Example.Moreover, description particular features, structures, materials, or characteristics can in any one or more of the embodiments or examples with
Suitable mode combines.
The foregoing is only a preferred embodiment of the present invention, is not intended to restrict the invention, for the skill of this field
For art personnel, the invention may be variously modified and varied.All within the spirits and principles of the present invention, made any to repair
Change, equivalent replacement, improvement etc., should all be included in the protection scope of the present invention.
Claims (10)
1. a kind of thin-film transistor array base-plate characterized by comprising
Glass substrate, being cascading on the glass substrate has refracting layer, the first protective layer, gate insulation layer, dielectric layer,
Two protective layers and insulating layer；
The thin film transistor (TFT) of multiple array settings, is formed between first protective layer and second protective layer, Mei Yisuo
Stating thin film transistor (TFT) includes grid, source electrode and drain electrode, and the grid is formed between the dielectric layer and the gate insulation layer,
The source electrode and drain electrode is formed in second protective layer；
A plurality of spaced data line, is formed in the second insulating layer, and data line described in each passes through one first mistake
The source electrode of thin film transistor (TFT) described in Kong Yuyi connects；With
Multiple pixel electrodes are formed on the insulating layer, and each pixel electrode is described thin by one second via hole and one
The drain electrode of film transistor connects；
Wherein, at least part of the refracting layer covers orthographic projection of the multiple thin film transistor (TFT) on the glass substrate
At least part of region and the refracting layer covers orthographic projection region of the multiple data lines on the glass substrate,
The refracting layer is for reflecting the backlight blocked by the thin film transistor (TFT) and the data line.
2. thin-film transistor array base-plate according to claim 1, which is characterized in that
The refracting layer includes multiple sublayers；
The sublayer includes silicon nitride layer and silicon oxide layer, and the silicon nitride layer is arranged alternately with the silicon oxide layer.
3. thin-film transistor array base-plate according to claim 2, which is characterized in that
The sublayer connecting in the refracting layer with the glass substrate is silicon nitride layer.
4. thin-film transistor array base-plate according to claim 2, which is characterized in that
The refracting layer includes the 2n sublayers, and n is non-zero natural number.
5. thin-film transistor array base-plate according to claim 2, which is characterized in that
The thickness of the sublayer are as follows: D=550/ (4N) nm；
D is the thickness of sublayer, and N is the refractive index of sublayer.
6. thin-film transistor array base-plate according to claim 1, which is characterized in that
The refracting layer is silicon nitride layer or silicon oxide layer.
7. thin-film transistor array base-plate according to claim 1 to 6, which is characterized in that on the refracting layer
Multiple loopholes are provided with, the loophole is correspondingly arranged with the pixel electrode.
8. a kind of display screen, which is characterized in that including the backlight module, thin-film transistor array base-plate and coloured silk being cascading
Colo(u)r filter；Wherein, the thin-film transistor array base-plate is thin film transistor (TFT) array base described in any one of claim 1-7
Plate.
9. display screen according to claim 8, which is characterized in that the colored filter includes: black matrix", colour
Layer, glass plate and protective layer, the data line and thin film transistor (TFT) pair of the black matrix" and the thin-film transistor array base-plate
It should be arranged.
10. a kind of electronic equipment, which is characterized in that including the display screen of claim 8 or 9.
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| CN201810732209.5A CN109031821A (en) | 2018-07-05 | 2018-07-05 | Thin-film transistor array base-plate, display screen and electronic equipment |
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