CN108993096B - Heat recycling system for membrane-based gas absorption - Google Patents
Heat recycling system for membrane-based gas absorption Download PDFInfo
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- CN108993096B CN108993096B CN201810635630.4A CN201810635630A CN108993096B CN 108993096 B CN108993096 B CN 108993096B CN 201810635630 A CN201810635630 A CN 201810635630A CN 108993096 B CN108993096 B CN 108993096B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
- B01D53/14—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols by absorption
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- Chemical Kinetics & Catalysis (AREA)
- Separation Using Semi-Permeable Membranes (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The invention relates to a heat exchange technology, and provides a heat recycling system for membrane-based gas absorption, which comprises: a temperature raising device (3) arranged on one conveying conduit of the first container (1) and the second container (2); a cooling device (4) arranged on a return conduit of the first container (1) and the second container (2); and the thermal circulation device is arranged between the temperature rising device (3) and the temperature reducing device (4) and is used for carrying out heat exchange on high-temperature fluid in the conveying conduit and low-temperature fluid in the backflow conduit, wherein the thermal circulation device comprises a semiconductor group, the semiconductor group is connected between the temperature rising device (3) and the temperature reducing device (4) through a heat conducting element, and the semiconductor group is electrified. The invention directly utilizes the waste heat in the device, can complete the transfer of heat from a low-temperature heat source to a high-temperature heat source by matching with a small amount of electric energy, and the occupied area of the device is greatly reduced, and the compactness is greatly improved.
Description
Technical Field
The present invention relates to heat exchange technology, and more particularly, to a thermal recycling device and system for membrane-based gas absorption.
Background
The membrane absorption is a novel absorption process combining the membrane technology and the common absorption technology, and has the advantages of no interference of gas-liquid flow and large specific surface area and large contact area of atmosphere and liquid. The process of membrane absorption consists mainly of absorption and dissociation, wherein the temperature of the absorption part is in the low temperature region (e.g. 30 ℃) and the temperature of the dissociation part is about in the high temperature region (e.g. 65 ℃ 5). Typically, the heating and cooling in the absorption and dissociation are performed separately, two sets of equipment are required, the energy consumed to do so is large, and the device is therefore increased in area.
Disclosure of Invention
Aiming at the problems in the prior art, the invention provides a thermal recycling system aiming at membrane-based gas absorption, which comprises the following components: the heating device is arranged on one conveying conduit of the first container and the second container; the cooling device is arranged on one backflow conduit of the first container and the second container; and the thermal circulation device is arranged between the temperature rising device and the temperature reducing device and is used for carrying out heat exchange on the high-temperature fluid in the conveying conduit and the low-temperature fluid in the backflow conduit, wherein the thermal circulation device comprises a semiconductor group, the semiconductor group is connected between the temperature rising device and the temperature reducing device through a heat conducting element, and the semiconductor group is electrified.
Optionally, the thermal recycling device includes: and the heat conducting element is connected to the end part of the semiconductor and comprises a heat conducting gel and a copper plate, and the heat conducting gel is coated on the copper plate.
Optionally, the semiconductor group is composed of a P-type semiconductor chip and an N-type semiconductor chip, wherein the N-type semiconductor chip is connected with a positive power supply electrode, and the P-type semiconductor chip is connected with a negative power supply electrode.
Optionally, the semiconductor group includes a plurality of groups of P-type semiconductor chips and N-type semiconductor chips, the outermost N-type semiconductor chip is connected to the positive electrode of the power supply, and the outermost P-type semiconductor chip is connected to the negative electrode of the power supply.
Optionally, the system further comprises: the micro-structure heat exchange element is positioned inside the temperature rising device and the temperature reducing device, and one end of the micro-structure heat exchange element is connected to the thermal circulation device.
Optionally, the microstructured heat exchange element has a plurality of holes therein for the passage of fluid.
Optionally, the microstructure heat exchange element has a copper wire wrapped with a heat insulating material, the copper wire being connected to a thermal cycling device.
Optionally, the copper wire is connected to a thermally conductive gel and/or copper plate.
Optionally, the first container is an adsorption tank, the second container is a dissociation tank, and the liquid portion of the adsorption tank and the liquid portion of the dissociation tank are connected through the conveying conduit and the return conduit.
Optionally, the adsorption tank has an asymmetric membrane inside to separate the liquid portion and the gas portion, and the dissociation tank has an asymmetric membrane inside to separate the liquid portion and the gas portion.
The beneficial effects of the invention are as follows:
in order to increase the energy utilization efficiency, the semiconductor is selected to use the Peltier effect to transfer the temperature of the cold end to the hot end, thereby achieving the purpose of reducing the energy consumption.
If the invention is utilized, the waste heat in the device can be directly utilized, the heat transfer from the low-temperature heat source to the high-temperature heat source can be completed by matching with a small amount of electric energy, the occupied area of the device can be greatly reduced, and the compactness is greatly improved.
Drawings
Fig. 1 is a schematic structural diagram of the device of the present invention.
Fig. 2 is a cross-sectional view of a micro heat exchange element.
Fig. 3 is a side view of a micro heat exchange element.
Reference numerals
Adsorption box 1, dissociation box 2, heating device 3, heat sink 4, heat conduction element 5.
Detailed Description
Embodiments of the present invention will now be described with reference to the drawings, wherein like elements are designated by like reference numerals. The following embodiments and technical features in the embodiments may be combined with each other without collision.
The system of the invention comprises an adsorption box 1, a dissociation box 2, a heating device 3, a cooling device 4 and a heat conducting element 5.
The adsorption tank 1 (first container) has a rectangular parallelepiped structure, and is partitioned by an asymmetric membrane in the middle. Wherein the left half part (G in the figure represents gas) of the adsorption tank 1 is a gas part, and the right half part is a liquid part (L in the figure represents liquid part), so that the dense film in the asymmetric membrane is near the right side of the liquid, and the filtering membrane is on the left side. The dissociation case 2 (second container) has a rectangular parallelepiped structure, and is partitioned by an asymmetric membrane. The dissociation tank 2 is opposite to the adsorption tank 1, and has a liquid portion (L in the figure) on the left side and a gas portion (G in the figure) on the right side, so that the dense film that is not formed is on the left side and the filtration film is on the right side. The gas and liquid parts of the adsorption box 1 and the dissociation box 2 are connected with an upper conduit and a lower conduit to ensure the transportation of the gas and the liquid, wherein the conduit connected with the liquid part is required to have better heat transfer performance to ensure the heat transfer efficiency of the semiconductor.
The temperature raising device 3 is provided in a connection pipe (transport pipe) from the liquid portion of the adsorption tank 1 to the liquid portion of the dissociation tank 2. A cooling device 4 is provided in a connection pipe (return pipe) from the liquid portion of the dissociation tank 2 to the liquid portion of the adsorption tank 1. In addition, in order to ensure the required adsorption and dissociation temperature, a semiconductor heat transfer device is additionally arranged to transfer heat, and the heat of the part needing to be cooled is transferred to the part needing to be heated
Between the temperature increasing device 3 and the temperature decreasing device 4, a heat transfer device is connected, the heat transfer device comprising: p-type semiconductor wafer, N-type semiconductor wafer, metal plate, heat conductive element 5. The N-type semiconductor is connected with the positive electrode of the power supply, and the P-type semiconductor is connected with the negative electrode of the power supply. The P-type semiconductor wafer is connected between the temperature raising device 3 and the temperature lowering device 4 through the metal plate and the heat conducting element 5, and the N-type semiconductor wafer is connected between the temperature raising device 3 and the temperature lowering device 4 through the metal plate and the heat conducting element 5. The heat conducting element 5 may be a heat conducting gel. The metal plate may be a copper plate. The metal plate and the heat conducting element 5 may be formed by combining a plurality of pieces, for example, a thin layer of heat conducting gel may be added between two copper plates. Due to the characteristics of the heat conducting gel, the heat conducting gel can not only obtain excellent heat transfer performance, but also increase the service life of the equipment due to stable chemical properties.
In addition, the heat transfer device may include a plurality of P-type semiconductor chips and N-type semiconductor chips (only one P-type semiconductor chip and one N-type semiconductor chip are shown in fig. 1). The P-type and N-type semiconductor chips connected to the cooling device 4 on the outermost side need to be connected to a set of conductive gel and copper plate, respectively, and each of the remaining semiconductor chips is connected to a set of conductive gel and copper plate. And finally, connecting the power supply anode to the N-type semiconductor on the most edge, and connecting the power supply cathode to the P-type semiconductor chip.
The temperature raising device 3 and the temperature lowering device 4 are internally provided with microstructure heat exchange elements, and the structures of the microstructure heat exchange elements are shown in figures 2-3. The microstructure heat exchange element adopts copper pipes as materials to strengthen the heat transfer capacity, and a part of the front end and the rear end are provided with threads so as to be convenient to be connected with other parts. The micro-structure heat exchange element is internally provided with a plurality of holes (for example, square), so that the heat exchange effect is enhanced and the heat transfer capacity is improved when fluid passes through. The heat is transferred to the heat conducting gel and copper plate group of the heat transfer device through the copper wire wrapped by the heat insulating material, and is conducted through the semiconductor heat transfer device. The heat insulation material is added to ensure that heat is not excessively dissipated in the process of heat transfer of the copper wire.
The operation of the system of the present invention will be described with carbon dioxide and nitrogen as examples. The mixed gas of carbon dioxide and nitrogen enters the adsorption box 1 through the first pipeline. The left side of the adsorption tank 1 is a gas part, wherein carbon dioxide gas enters the right absorption liquid through an asymmetric membrane with a dense membrane, and nitrogen cannot permeate through the asymmetric membrane and is discharged along with a second pipeline above. The asymmetric membrane is adopted to better ensure that the pressure at two sides is not enough to make liquid permeate out under the condition of not reducing the gas absorptivity.
The carbon dioxide-containing adsorption liquid from the adsorption tank 1 enters a pipeline, is heated by a temperature raising device 3, and then enters a dissociation tank 2. In the dissociation tank 2, carbon dioxide diffuses from the liquid to the gas side due to temperature, and is carried out via scavenging. The dissociated absorption liquid passes through the cooling device 4 to obtain lower temperature, and then enters the absorption box 1 again for the next round of circulation.
In this case, the heat of the temperature raising device 3 comes from the temperature lowering device, and the heat transfer between the temperature difference of 35 ℃ can be completed by the peltier effect (the heat transfer efficiency is related to the current and the peltier coefficient) because the temperature difference is not large, and the heat transfer of 1kg of fluid can be completed for 1 second by using about 20w of electricity. The two copper sheet ends on the extreme side of the low temperature device 3 are electrified with direct current, the positive electrode is connected with the N-type semiconductor, and the negative electrode is connected with the P-type semiconductor, so that heat transfer from the low temperature part to the high temperature part is completed.
The above embodiments are only preferred embodiments of the present invention, and it is intended that the common variations and substitutions made by those skilled in the art within the scope of the technical solution of the present invention are included in the scope of the present invention.
Claims (5)
1. A thermal recycling system for membrane-based gas absorption, comprising:
a temperature raising device (3) arranged on one conveying conduit of the first container (1) and the second container (2);
a cooling device (4) arranged on a return conduit of the first container (1) and the second container (2);
the thermal circulation device is arranged between the temperature rising device (3) and the temperature reducing device (4) and is used for carrying out heat exchange on the high-temperature fluid in the conveying conduit and the low-temperature fluid in the reflux conduit,
the micro-structure heat exchange element is positioned in the heating device (3) and the cooling device (4), one end of the micro-structure heat exchange element is connected to the thermal circulation device, and a plurality of holes for fluid to pass through are formed in the micro-structure heat exchange element;
wherein the thermal circulation device comprises a semiconductor group which is connected between a heating device (3) and a cooling device (4) through a heat conduction element based on the Peltier effect, and the semiconductor group is electrified and consists of a P-type semiconductor chip and an N-type semiconductor chip, wherein the N-type semiconductor chip is connected with a positive electrode of a power supply, the P-type semiconductor chip is connected with a negative electrode of the power supply,
the first container (1) is an adsorption tank, the second container (2) is a dissociation tank, the liquid part of the adsorption tank and the liquid part of the dissociation tank are connected through the conveying conduit and the backflow conduit, an asymmetric membrane is arranged in the adsorption tank to separate the liquid part and the gas part, and an asymmetric membrane is arranged in the dissociation tank to separate the liquid part and the gas part.
2. The system of claim 1, wherein the system further comprises a controller configured to control the controller,
the heat conducting element comprises a heat conducting gel and a copper plate, and the heat conducting gel is coated on the copper plate.
3. The system of claim 1, wherein the system further comprises a controller configured to control the controller,
the semiconductor group comprises a plurality of groups of P-type semiconductor chips and N-type semiconductor chips, the outermost N-type semiconductor chip is connected with the positive electrode of the power supply, and the outermost P-type semiconductor chip is connected with the negative electrode of the power supply.
4. The system of claim 1, wherein the system further comprises a controller configured to control the controller,
the microstructure heat exchange element is provided with a copper wire wrapped by a heat insulation material, and the copper wire is connected to the thermal circulation device.
5. The system of claim 4, wherein the system further comprises a controller configured to control the controller,
the copper wires are connected to the heat conducting gel and/or the copper plate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810635630.4A CN108993096B (en) | 2018-06-20 | 2018-06-20 | Heat recycling system for membrane-based gas absorption |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201810635630.4A CN108993096B (en) | 2018-06-20 | 2018-06-20 | Heat recycling system for membrane-based gas absorption |
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| CN108993096A CN108993096A (en) | 2018-12-14 |
| CN108993096B true CN108993096B (en) | 2023-09-26 |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1273565A (en) * | 1997-10-03 | 2000-11-15 | Usf过滤分离集团公司 | Purification of liquid flow |
| CN1759922A (en) * | 2004-10-13 | 2006-04-19 | 中国科学院大连化学物理研究所 | A kind of application of membrane module in mixed gas separation of adopting the densified polymer film |
| KR20110031940A (en) * | 2011-03-16 | 2011-03-29 | 임광희 | Visible ray utilizing devices to treat waste-air |
| WO2012144189A1 (en) * | 2011-04-21 | 2012-10-26 | パナソニック株式会社 | Device for adsorbing and emitting carbon dioxide |
| WO2015109283A1 (en) * | 2014-01-20 | 2015-07-23 | Prism Analytical Technologies, Inc. | Ambient air purifier with humidification and dehumidification |
| CN106523057A (en) * | 2016-11-24 | 2017-03-22 | 华北电力大学 | Atmospheric low temperature source utilization device |
-
2018
- 2018-06-20 CN CN201810635630.4A patent/CN108993096B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1273565A (en) * | 1997-10-03 | 2000-11-15 | Usf过滤分离集团公司 | Purification of liquid flow |
| CN1759922A (en) * | 2004-10-13 | 2006-04-19 | 中国科学院大连化学物理研究所 | A kind of application of membrane module in mixed gas separation of adopting the densified polymer film |
| KR20110031940A (en) * | 2011-03-16 | 2011-03-29 | 임광희 | Visible ray utilizing devices to treat waste-air |
| WO2012144189A1 (en) * | 2011-04-21 | 2012-10-26 | パナソニック株式会社 | Device for adsorbing and emitting carbon dioxide |
| WO2015109283A1 (en) * | 2014-01-20 | 2015-07-23 | Prism Analytical Technologies, Inc. | Ambient air purifier with humidification and dehumidification |
| CN106523057A (en) * | 2016-11-24 | 2017-03-22 | 华北电力大学 | Atmospheric low temperature source utilization device |
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| CN108993096A (en) | 2018-12-14 |
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Effective date of registration: 20230808 Address after: 102206 No. 2 Nong Road, Changping District, Beijing Applicant after: NORTH CHINA ELECTRIC POWER University Address before: 102206 No. 2 Nong Road, Zhu Xin Zhuang, Beijing, Changping District Applicant before: NORTH CHINA ELECTRIC POWER University Applicant before: JIANGSU CHANGQING AGROCHEMICAL Co.,Ltd. |
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