CN108279247B - A kind of a wide range of direct detection imaging device of electron-beam excitation fluorescence and its method - Google Patents
A kind of a wide range of direct detection imaging device of electron-beam excitation fluorescence and its method Download PDFInfo
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Abstract
The invention discloses a kind of a wide range of direct detection imaging device of electron-beam excitation fluorescence and its methods.Imaging device of the invention includes: scanning electron microscope system, sweep generator, phosphor collection coupled system, semiconductor photodetector, scanning synchronous signal acquisition device, Collaborative Control and data processing output system；The present invention uses modular framework, and the configuration adjustment of each module and subsequent upgrade flexibly facilitate very much；By the large-scale semiconductor photodetection chip for introducing semiconductor photodetector, so that in scanning electron microscope system semiconductor photodetector can be coupled to identical high collection efficiency convergence in the fluorescence that big imaging is excited within sweep of the eye, it solves the problems, such as that a wide range of fluorescent scanning is imaged obtained image and is difficult with unified standard to calculate and compare the fluorescent excitation intensity or fluorescence excitation yield at different location, a wide range of quick detection and analysis based on electron-beam excitation fluorescence signal can be completed.
Description
Technical field
The present invention relates to the detection of the fluorescence signal of electron-beam excitation and processing techniques, and in particular to a kind of electron-beam excitation is glimmering
Wide range direct detection imaging device and its method.
Background technique
The fluorescence signal of electron-beam excitation, refer to when beam bombardment on the surface of the material, in addition to secondary electron, back scattering electricity
Outside son, auger electrons and X-ray, the frequency launched is in ultraviolet, infrared or visible light wave range electromagnetic wave；Its basic principle
It is excited by incident electron to upper state for the electronics of material internal, return lower state by certain relaxation time transition and discharges energy
Amount, a portion energy are emitted in the form of electromagnetic radiation.Material generates the physical process of fluorescence under electron-beam excitation
It is determined by its electronic structure, and the same elemental composition of electronic structure, lattice structure and defect and locating mechanics, calorifics, electromagnetism
It is related to learn the factors such as environment.Therefore, electron-beam excitation fluorescence spectrum can reflect material physics itself by material electronics structure
Characteristic.
The detection and processing of electron-beam excitation fluorescence signal are usually combined with scanning or transmission electron microscope, Neng Goushi
The binding of existing morphology observation, structure and constituent analysis with electron-beam excitation fluorescence spectrum.Used in electron-beam excitation fluorescence
Electron beam spot is very small, and energy is high；Compared to luminescence generated by light, electron-beam excitation fluorescence signal has high-space resolution, Gao Ji
The features such as sending out energy, wide spectral range, big shooting depth, and can be realized full spectrum or the imaging of single spectrum fluorescent scanning.Electronics
Shu Jifa fluorescence signal can be applied to the photism of the fluorescent materials such as micron, the semiconductor-quantum-point of nanoscale, quantum wire
Quality Research.
Usual electron-beam excitation fluorescence collects excited fluorescence, such as paraboloid of revolution concave reflection using reflecting surface mirror
Mirror or rotation ellipsoid concave mirror, fluorescence excitation position are located at a focal position of reflecting surface mirror and condenser system, and
Excited fluorescence is by reflecting surface mirror and condenser system post-concentration in reflecting surface mirror and another focal point of condenser system, two cokes
Point position has mutual corresponding conjugate relation.If fluorescence excites the focal position of position deviation reflecting surface mirror and condenser system,
Then excited fluorescence another focal point collection efficiency will be very low.In general, being limited by machining and optical aberration, focus is not
It is the stringent point in mathematical meaning, and is extended to focal spot.For general reflecting surface mirror and condenser system, can guarantee to be conjugated
The focused spot diameter range of relationship only about 50 microns, when the 50 micron diameter focal spot is deviateed in fluorescence excitation position, fluorescence is received
Collection efficiency will reduce rapidly.Therefore, the detection and processing of electron-beam excitation fluorescence signal are applied to scanning electron microscope, carry out
Fluorescent scanning imaging and when spectral measurement, the equally distributed range of phosphor collection efficiency is only the 50 of reflecting surface mirror and condenser system
Within the scope of micron diameter focal spot, the fluorescence that cannot achieve in wider (such as 500 microns even 1 mm dia ranges) is uniformly received
Collection, so that a wide range of fluorescent scanning is imaged obtained image and is difficult with unified standard to calculate and compare at different location
Fluorescent excitation intensity or fluorescence excitation yield and fluorescence spectrum information.However, for special material analysis, such as
The crystal inside dislocation of the fluorescence for the zircon studied needed for matter archaeology field, the required light-emitting film studied of semiconductor field is distributed
Etc., it is required to high-resolution fluorescence imaging and spectral measurement under a wide range of visual field, to improve analysis detection efficiency.If big model
It encloses under visual field, that is, under a wide range of electron beam scanning imagery in scanning electron microscope, position fluorescence intensity
Collection efficiency is inhomogenous, fluorescence imaging analysis requirement required for being just unable to satisfy.Therefore, it is necessary to increase electron-beam excitation fluorescence
The uniform collection range of signal is the key that carry out one of a wide range of rapid fluorescence detection and analysis.
Usual electron-beam excitation fluorescence signal results from vacuum specimen chamber, and fluorescence signal is needed from vacuum sample chamber interior
It is transmitted to the fluorescence intensity or spectrum investigating system of vacuum sample outdoor, is be easy to cause in the transmission process of fluorescence signal glimmering
The decaying of luminous intensity and the distortion of spectral signal, and overall system configuration is cumbersome, operates with versus busy.For example,
When carrying out fluorescence intensity detection using photomultiplier tube, since photomultiplier tube outer dimension is typically larger than 10~30mm, and work
As when need about one kilovolt of high direct voltage, therefore be difficult to be integrated to scanning electron microscope system by size and electromagnetic interference influence
Vacuum specimen chamber in, can only by peep pass to vacuum sample chamber interior fluorescence signal transmit optical path input fluorescence signal carry out
Fluorescence intensity detection；When transmitting optical path progress fluorescence signal transmission by fluorescence signal, due to coupling efficiency and fluorescence signal
20% or more decaying is reduced the detection efficient of fluorescence intensity by the sink effect in transmission optical path, fluorescence signal intensity；And
And load to outside scanning electron microscope system photomultiplier tube and its detection circuit needs again additionally install and configure, increasing
The complexity of system and the convenience of operation are added.
Summary of the invention
In order to realize a wide range of direct detection and fluorescence letter of the fluorescence signal of electron-beam excitation in vacuum sample room
Number processing and analysis, the present invention provides a kind of a wide range of direct detection imaging device of electron-beam excitation fluorescence and its method；It is logical
The ingehious design of phosphor collection and signal processing apparatus is crossed to detect focusing electron beam in sample surfaces progress point by point scanning and swash
The fluorescence signal of hair realizes high efficiency fluorescence imaging；Using and being accurately positioned by large-scale semiconductor photodetection chip
To realize a wide range of uniformly fluorescence signal detection；And it is straight in vacuum sample room by large-scale semiconductor photodetection chip
Connect the direct detection being fixedly connected to realize fluorescence signal in vacuum sample room.
It is an object of the present invention to provide a kind of a wide range of direct detection imaging devices of electron-beam excitation fluorescence.
The a wide range of direct detection imaging device of electron-beam excitation fluorescence of the invention include: scanning electron microscope system,
Sweep generator, phosphor collection coupled system, semiconductor photodetector, scanning synchronous signal acquisition device, Collaborative Control with
Data processing output system；Wherein, Collaborative Control and data processing output system be as synchronously control and data acquisition center, with
Scanning electron microscope system, sweep generator, semiconductor photodetector and scanning synchronous signal acquisition device are connected with each other；
Sweep generator is additionally coupled to the electron beam external scan regulation interface of scanning electron microscope system；Phosphor collection coupling
System is mounted in the vacuum sample room of scanning electron microscope system；Semiconductor photodetector a part is aobvious positioned at scanning electron
In the vacuum sample room of micromirror systems, another part is located at outside vacuum sample room；Scanning electron microscope system, scanning signal hair
Raw device and semiconductor photodetector are further connected to scanning synchronous signal acquisition device；Collaborative Control and data processing output system
Electric mirror control signal is issued, the electron beam external scan triggering interface of scanning electron microscope system, control scanning electricity are transmitted to
Sub- microscopic system receives external signal；Collaborative Control and data processing output system to sweep generator issue synchronize sweep
Control signal is retouched, sweep generator generates the scan control signal of number, is transmitted to scanning synchronous signal acquisition device, and will
After the scan control signal transformation conditioning of number is at the scan control signal of simulation, it is transmitted to the electricity of scanning electron microscope system
Beamlet external scan regulates and controls interface, controls electron beam scan position and the scanning residence time of scanning electron microscope system；It sweeps
Electron microscopy system launching electronics beam is retouched, the detection to be analyzed being irradiated in the vacuum sample room of scanning electron microscope system
Sample on, excite detection to be analyzed sample generate fluorescence；Phosphor collection coupled system collects fluorescence, and in vacuum specimen chamber
It is interior that the fluorescence to expose thoroughly in range is transmitted to semiconductor photodetector with identical coupling efficiency；Semiconductor photodetector is true
Fluorescence is converted into photo-signal in empty sample room, and photo-signal is transmitted to outside vacuum sample room, in Collaborative Control
Under the synchronous acquisition trigger signal control issued with data processing output system, photo-signal is converted into fluorescence intensity letter
Number, and fluorescence intensity signals are transmitted separately to scan the external signal of synchronous signal acquisition device and scanning electron microscope system
Acquisition interface；It scans synchronous signal acquisition device and controls signal in the synchronous acquisition that Collaborative Control and data processing output system issue
Under control, the scan control signal of the number of sweep generator, the fluorescence intensity letter of semiconductor photodetector are received respectively
Number and the scanning electron microscope system secondary electron or backscattered electron signal that generate, then will be transmitted to after signal aggregation process
Collaborative Control and data processing output system；It is controlled and is believed by the synchronous scanning that Collaborative Control and data processing output system issue
Number, synchronous acquisition trigger signal and synchronous acquisition control signal there is synchronous temporal and logic relation, issue a synchronous scanning
It is synchronous to issue corresponding synchronous acquisition trigger signal and synchronous acquisition control signal when controlling signal, it realizes in electronics beam scanning
In the scanning residence time that position remains unchanged, the acquisition of fluorescence intensity signals is carried out in the range that exposes thoroughly, finally by cooperateing with
Control carries out the signal processing analysis of real-time synchronization with data processing output system and shows output.
Scanning electron microscope system includes: electron gun, electron-optical system, vacuum specimen chamber, signal detection system, electricity
Gas control system and user's control system；Wherein, electron gun launching electronics beam forms the focusing of high quality through electron-optical system
Electron beam is incident on the sample of the detection to be analyzed in vacuum sample room, the sample phase of electron beam and detection to be analyzed
Interaction generates signal, and the fluorescence of generation is collected by phosphor collection coupled system, other signals are collected by signal detection system；Electricity
Gas control system provides electron beam external scan triggering interface, electron beam external scan regulates and controls interface, external signal acquisition interface
With signal shared interface；Electron beam external scan triggers the Electronic Speculum that interface Collaborative Control and data processing output system issue
Signal is controlled, electron beam external scan regulates and controls the scan control signal for the simulation that interface sweep generator issues, control
Electron-optical system processed executes the control manipulation by sweep generator, and external signal acquisition interface is synchronous to receive semiconductor light
The fluorescence intensity signals of detector finally directly acquire fluorescence intensity point by user's control system of scanning electron microscope system
The image of cloth；Caused by the synchronous sample interaction for reading electron beam and detection to be analyzed of signal detection system except fluorescence with
Other outer signals, and each signal scanning imaging results are presented by user's control system；Signal detection system is in addition to fluorescence
Other signals improved, and by electric control system provide signal shared interface, be transmitted to scanning synchronization signal adopt
The synchronous data collection unit of storage.
Sweep generator includes: sweep generator power supply, scan control unit, digital analog converter and simulation letter
Number conditioning output unit；Wherein, sweep generator power supply is respectively connected to scan control unit, digital analog converter and simulation
Signal condition output unit；Scan control unit receives the synchronous scanning that Collaborative Control and data processing output system issue and controls
Signal, it is digital signal that synchronous scanning, which controls signal,；Scan control unit handles the signal received, and being converted to has
The scan control signal of the number of sequential logic set by user, and the scan control signal of number is exported respectively to digital-to-analogue
The synchronous data collection unit of converter and scanning synchronous signal acquisition device；Digital analog converter turns the scan control signal of number
The scan control signal that scanning electron microscope system is capable of received simulation is changed and is modulated to, and according to set by user
Sequential logic is sequentially output to analog signal conditioner output unit；Analog signal conditioner output unit to the analog signal of input into
Row improves, and the scan control signal of the simulation after conditioning is transmitted to the electron beam external scan of scanning electron microscope system
Regulate and control interface.
Phosphor collection coupled system includes: reflecting surface mirror and reflecting surface mirror fixation in situ device；Wherein, reflecting surface mirror uses
For rotation ellipsoid concave mirror or paraboloid of revolution concave mirror；Reflecting surface mirror is solid by reflecting surface mirror fixation in situ device
It is scheduled in the vacuum specimen chamber of scanning electron microscope system, a through-hole is opened on reflecting surface mirror, so that scanning electron microscope system
The electron beam that high quality caused by uniting focuses passes through reflecting surface mirror, so that the sample with detection to be analyzed interacts；Electronics
Fluorescence is generated after beam and the interaction of the sample of detection to be analyzed, fluorescence is incident to semiconductor light detection by the coupling of reflecting surface mirror
Device.
The setting position of reflecting surface mirror is determined by reflecting surface mirror fixation in situ device, and guarantees scanning electron microscope system
Scanning range center at electron beam be combined through the focus of reflecting surface mirror again with the axis in opened hole on reflecting surface mirror；Instead
Penetrate face mirror by reflecting surface mirror fixation in situ device with the electron-optical system of scanning electron microscope system object lens rigidity and
It closely connects, the design focus of reflecting surface mirror is enabled to be located at the object of the electron-optical system of scanning electron microscope system
Below mirror lower surface within 6mm；The surface of sample in the vacuum specimen chamber of scanning electron microscope system, which is equally adjusted to, sweeps
It retouches below the object lens lower surface of the electron-optical system of electron microscopy system within 6mm, guarantees the design focus of reflecting surface mirror
Positioned at the surface of sample；6mm of the sample below the object lens lower surface of the electron-optical system of scanning electron microscope system with
It inside can be realized the high-resolution imaging of scanning electron microscope；Reflecting surface mirror has three-dimensional greater than the phosphor collection of 1/4 spherical surface
Angle has high phosphor collection efficiency；One end of reflecting surface mirror fixation in situ device is fixed on the true of scanning electron microscope system
On empty sample room, other end position is flexibly adjustable, is fixed by positioning device in the electronic light of scanning electron microscope system
On the object lens of system, and its position is accurately positioned by standard of object lens.
Semiconductor photodetector includes: large-scale semiconductor photodetection chip, semiconductor chip extraction circuit board, circuit
Plate barrier enclosure shell, circuit board housing locating connector, electric signal transmission circuit, electric signal transmission circuit vacuum peep logical dress
It sets and photo-signal amplification controller；Wherein, circuit board housing locating connector location and installation is in phosphor collection coupled systemes
On the reflecting surface mirror fixation in situ device of system；Shielding circuit board package casing location and installation is in circuit board housing locating connector
On；Large-scale semiconductor photodetection chip is welded on semiconductor chip and draws on circuit board, and the two is located at shielding circuit board envelope
In casing, semiconductor chip draws circuit board and provides power supply, photo-signal and control for semiconductor optoelectronic detection chip
The connection pin of signal processed；The surface of shielding circuit board package casing is provided with optical window；Scanning electron microscope system
Vacuum specimen chamber locular wall on be provided with electric signal transmission circuit vacuum and peep exchange device；One end of electric signal transmission circuit connects
Large-scale semiconductor photodetection chip, the other end peep exchange device by electric signal transmission circuit vacuum and are connected to vacuum specimen chamber
Outer photo-signal amplification controller；Photo-signal amplification controller is integrated with large-scale semiconductor photodetection chip work
Power supply required for making is drawn the pin of circuit board by semiconductor chip through electric signal transmission circuit and is partly led for large area
Body photodetection chip provides power supply；Fluorescence caused by the electron-beam excitation sample of scanning electron microscope system, through electricity
The optical window of road plate barrier enclosure case surface, is incident on large-scale semiconductor photodetection chip, fluorescence is converted to
Photo-signal is drawn the pin on circuit board by semiconductor chip and is put through electric signal transmission circuit transmission to photo-signal
Big controller, photo-signal amplification controller are converted to the photo-signal that large-scale semiconductor photodetection chip exports
The glimmering of the received simulation of external signal sniffing interface of synchronous signal acquisition device and scanning electron microscope system can be scanned
Light intensity signal；Photo-signal amplification controller is connected to synchronous data collection unit and the association of scanning synchronous signal acquisition device
With the Collaborative Control unit of control and data processing output system；Photo-signal amplification controller is according to Collaborative Control and data
The synchronous acquisition trigger signal realization that processing output system issues starts, suspends or stop signal acquisition output, and adjusts in real time
The conditioning parameter of the quasi- fluorescence intensity signals of mould preparation, the fluorescence intensity signals for the simulation that photo-signal amplification controller is exported
The external signal sniffing interface of conditioning to scanning synchronous signal acquisition device and scanning electron microscope system being capable of received mould
Quasi- fluorescence intensity signals, and the fluorescence intensity signals of the simulation after conditioning are transmitted to the synchronization for scanning synchronous signal acquisition device
The external signal acquisition interface of data acquisition unit and scanning electron microscope system, or the fluorescence intensity signals of simulation are turned
The external signal sniffing interface for being changed to scanning synchronous signal acquisition device and scanning electron microscope system being capable of received number
Fluorescence intensity signals, and digital signal condition is carried out, by the digital data transmission after conditioning to scanning synchronous signal acquisition device
Synchronous data collection unit.In vacuum sample room, electron beam generates fluorescence in a wide range of interior scanning sample；Fluorescence is by glimmering
Light is collected coupled system coupling and is incident in large-scale semiconductor photodetection chip processes, the fluorescence damage at each scan position
Consumption is all consistent, and the efficiency that fluorescence is collected at different scan positions is identical, thus undistorted glimmering in a wide range of interior realization
Light imaging.
Fluorescence is converted to photo-signal by large-scale semiconductor photodetection chip, using silicon photomultiplier, snowslide
One of the photoelectric detector based on semiconductor chip such as photodiode, photodiode and miniature photomultiplier,
And the array structure photoelectric detector being made of above-mentioned photoelectric detector；The ruler of large-scale semiconductor photodetection chip
It is very little to be required to collect the electron beam within the scope of sample surfaces deviation reflecting surface mirror foci 0.5mm by scanning electron microscope system
Fluorescence signal caused by sample is excited, the focus of reflecting surface mirror is just the center of the scanning range of scanning electron microscope system
Place.The fluorescence escape efficiency of optical window is 90% or more, so that coupling incidence by the reflecting surface mirror of phosphor collection coupled system
Fluorescence can be incident on large-scale semiconductor photodetection chip.Shielding circuit board package casing is used except optical window part
Lightweight metal material；Shielding circuit board package casing is the power input and photoelectric current letter of large-scale semiconductor photodetection chip
Number draw provide electromagnetic shielding, on the one hand can guarantee that the electromagnetic interference in vacuum sample room will not influence large-scale semiconductor light
Electric detection chip works normally, and the electromagnetic radiation that on the other hand can guarantee that large-scale semiconductor photodetection chip is formed will not
It is transmitted in vacuum specimen chamber.The positioning of shielding circuit board package casing is fixedly attached on circuit board housing locating connector；
Circuit board housing locating connector one end is located by connecting to the reflecting surface mirror fixation in situ device of phosphor collection coupled system,
Other end, which is located by connecting, shielding circuit board package casing and stores portion of the fixed telecommunication transmission circuit in vacuum sample room
Divide cable；Circuit board housing locating connector requires the operating position for being accurately positioned large-scale semiconductor photodetection chip,
Three dimension location required precision is lower than 0.1 millimeter.Electric signal transmission circuit uses flexible shielded cable, is used for transmission large area
Power supply required for semiconductor optoelectronic detection chip works and control signal, and its photo-signal of output.
Scanning synchronous signal acquisition device includes: data acquisition controller, synchronous data collection unit, Data buffer sum number
According to output unit；Wherein, data acquisition controller and synchronous data collection unit, Data buffer and data outputting unit connect
It connects, and is connect with Collaborative Control with the Collaborative Control unit of data processing output system；Synchronous data collection unit also with data
Buffer is connected, and the light with the analog signal conditioner output unit of sweep generator, semiconductor photodetector respectively
The signal shared interface of the electric control system of current signal amplification controller and scanning electron microscope system connects；Data
Buffer is also connect with data outputting unit；Data outputting unit is additionally coupled to the number of Collaborative Control Yu data processing output system
According to acquisition unit；Data acquisition controller, which receives the synchronous acquisition that Collaborative Control and data processing output system issue and controls, to be believed
Number, and be respectively converted into data acquisition instructions and be transmitted to synchronous data collection unit, it is converted to instruction data storage and is transmitted to number
According to buffer, is converted to data output instruction and is transmitted to data outputting unit；Synchronous data collection unit receives data acquisition control
The data acquisition instructions that device processed issues, scan control signal, the semiconductor of the number of synchronous acquisition sweep generator output
The fluorescence intensity signals of optical detector conditioning output, the secondary electron of scanning electron microscope system conditioning output and back scattering are electric
Subsignal, data acquisition instructions control the acquisition of synchronous data collection unit beginning and end, and control signal according to synchronous acquisition
Sequential logic set by middle user sets sequential logic when each circuit-switched data is acquired to synchronous data collection unit；It is synchronous
Data acquisition unit collects glimmering at corresponding electron beam scan position in single pixel residence time (i.e. a timing cycles)
Light intensity signal and secondary electron or backscattered electron signal data, electron beam scan position is the same as fluorescence intensity signals and secondary electricity
Son or backscattered electron signal have one-to-one relationship；Synchronous data collection unit, which finally exports data to data, keeps in
Device；Data buffer receives the instruction data storage that data acquisition controller issues, when temporary set with set format
Between the collected data of synchronous data collection unit institute in range, instruction data storage is according to user in synchronous acquisition control signal
Set time series stereodata Data buffer completes the temporary of the acquired data of synchronous data collection unit；Data output is single
Member receives the data output instruction that data acquisition controller issues, and reads the data in Data buffer, and according to set
Format and sequential logic with digital signal forwarding output to Collaborative Control and data processing output system, data output instruction according to
Synchronous acquisition controls time series stereodata data outputting unit set by user in signal and completes Data buffer output data
Forwarding output.
Collaborative Control and data processing output system include: a computer, Collaborative Control unit and data acquisition unit；
Wherein, data acquisition unit is installed in the computer of Collaborative Control and data processing output system, and with scanning synchronization signal
The data outputting unit of collector, Collaborative Control are connected with the Collaborative Control unit of data processing output system；Computer mentions
For user's operating and controlling interface and interactive interface, and complete the record storage of Various types of data operation and information；Collaborative Control unit according to
User's manipulation command issues electric mirror control signal, to the scan control of sweep generator to scanning electron microscope system
Unit issues synchronous scanning control signal, issues synchronous acquisition touching to the photo-signal amplification controller of semiconductor photodetector
Signal, to scanning synchronous signal acquisition device data acquisition controller issue synchronous acquisition control signal, to Collaborative Control with
The data acquisition unit of data processing output system issues data acquisition instructions and time series stereodata signal, and completes and company, institute
The feedback interaction that each section carries out signal implementation progress is connect, realizes the synchronous synergetic operation of measuring device each section, most backcasting
The user's operating and controlling interface and interactive interface feedback control and parameter information of machine；Synchronous scanning controls signal, synchronous acquisition triggering letter
Number there is synchronous temporal and logic relation with synchronous acquisition control signal, when issuing a synchronous scan control signal, synchronous sending
Synchronous acquisition trigger signal and synchronous acquisition control signal, realize the scanning residence time remained unchanged in electron beam scan position
It is interior, while the acquisition of fluorescence intensity signals is carried out, the signal output and display of real-time synchronization are finally carried out by computer, complete electricity
Beamlet excites fluorescence imaging and measurement function；Collaborative Control unit is installed on the calculating of Collaborative Control Yu data processing output system
In machine, and with the scan control of the electron beam external scan of scanning electron microscope system triggering interface, sweep generator
Unit, semiconductor photodetector photo-signal amplification controller, scan synchronous signal acquisition device data acquisition controller,
Collaborative Control is connected with the data acquisition unit of data processing output system；Data acquisition unit can summarize acquisition by scanning
The collected data-signal of synchronous signal acquisition device, further according to the data acquisition instructions and time series stereodata of Collaborative Control unit
Data signal transmission to computer is carried out aggregation process by signal.
It is another object of the present invention to provide a kind of a wide range of direct detection imaging devices of electron-beam excitation fluorescence
Control method.
The control method of a wide range of direct detection imaging device of electron-beam excitation fluorescence of the invention, comprising the following steps:
1) Collaborative Control and data processing output system issue electric mirror control signal, are transmitted to scanning electron microscope system
Electron beam external scan trigger interface, control scanning electron microscope system receive external signal；
2) Collaborative Control and data processing output system issue synchronous scanning to sweep generator and control signal, scanning
Signal generator generate number scan control signal, be transmitted to scanning synchronous signal acquisition device, and by number scan control
After signal transformation conditioning is at the scan control signal of simulation, it is transmitted to the electron beam external scan tune of scanning electron microscope system
Interface is controlled, electron beam scan position and the scanning residence time of scanning electron microscope system are controlled；
3) scanning electron microscope system launching electronics beam is irradiated in the vacuum sample room of scanning electron microscope system
Detection to be analyzed sample on, excite detection to be analyzed sample generate fluorescence；
4) phosphor collection coupled system collect fluorescence, and in vacuum sample room by the fluorescence to expose thoroughly in range with identical
Transmission coupling efficiency is transmitted to semiconductor photodetector；
5) fluorescence is converted to photo-signal in vacuum sample room by semiconductor photodetector, and is transmitted to vacuum sample
Outdoor turns photo-signal under the synchronous acquisition trigger signal control that Collaborative Control and data processing output system issue
Fluorescence intensity signals are changed to, and fluorescence intensity signals are transmitted separately to scanning synchronous signal acquisition device and scanning electron microscope
The external signal acquisition interface of system；
6) scanning synchronous signal acquisition device controls in the synchronous acquisition that Collaborative Control and data processing output system issue and believes
Number control under, respectively receive sweep generator number scan control signal, semiconductor photodetector fluorescence intensity
The secondary electron or backscattered electron signal that signal and scanning electron microscope system generate, then will be transmitted after signal aggregation process
To Collaborative Control and data processing output system；
7) signal, synchronous acquisition trigger signal are controlled by the synchronous scanning that Collaborative Control and data processing output system issue
There is synchronous temporal and logic relation with synchronous acquisition control signal, it is synchronous to issue when issuing a synchronous scanning control signal
Corresponding synchronous acquisition trigger signal and synchronous acquisition control signal, and realization stops in the scanning that electron beam scan position remains unchanged
It stays in the time, the acquisition of fluorescence intensity signals is carried out in the range that exposes thoroughly, be finally by Collaborative Control and data processing output
System carries out the signal processing analysis of real-time synchronization and shows output.
Advantages of the present invention:
The a wide range of direct detection imaging device of electron-beam excitation fluorescence of the invention uses modular framework, each module
Configuration adjustment and subsequent upgrade flexibly facilitate very much；Unified synchronous association of each module in Collaborative Control and data processing output system
It is cooperated with each other under regulation system, guarantees stringent timing and logical order, and each mould can be detected by feedback interactive signal
The operating condition of block finally realizes a wide range of direct detection imaging of high-precision electron-beam excitation fluorescence；Phosphor collection coupled systemes
The focus of the reflecting surface mirror of system be located at below the object lens lower surface of the electron-optical system of scanning electron microscope system 6mm with
It is interior, it can be realized the high-resolution imaging of scanning electron microscope；Reflecting surface mirror has three-dimensional greater than the phosphor collection of 1/4 spherical surface
Angle has high phosphor collection efficiency；By introducing the reflecting surface mirror fixation in situ device of phosphor collection coupled system for reflecting surface
Mirror is directly fixed and is accurately located in scanning electron microscope system, in actual operation without doing additional adjustment, greatly mentions
The high efficiency of experiment test；By introducing the large-scale semiconductor photodetection chip of semiconductor photodetector, so that sweeping
Retouching electron microscopy system can assemble coupling in the fluorescence that big imaging is excited within sweep of the eye with identical high collection efficiency
It is bonded to semiconductor photodetector, a wide range of fluorescent scanning is solved obtained image is imaged and be difficult with unified standard to survey
The problem of calculating and comparing the fluorescent excitation intensity or fluorescence excitation yield at different location, can complete glimmering based on electron-beam excitation
The a wide range of quick detection and analysis of optical signal；It is partly led by being introduced directly into the vacuum sample room of scanning electron microscope system
Body optical detector reduces the fluorescence intensity in conventional fluorescent signal light transmission road and is lost, and improves the detection effect of fluorescence intensity
Rate, simultaneously because only being passed by electric signal without installing additional fluorescence detection device outside scanning electron microscope system
The photo-signal that transmission of electricity Lu Jiang represents fluorescence intensity signals is transmitted to photo-signal amplification controller, greatly reduces system
Complexity, improve the convenience of operation and configuration.
Detailed description of the invention
Fig. 1 is the signal of one embodiment of a wide range of direct detection imaging device of electron-beam excitation fluorescence of the invention
Figure；
Fig. 2 is the phosphor collection coupled system of a wide range of direct detection imaging device of electron-beam excitation fluorescence of the invention
The schematic diagram of amplification；
Fig. 3 is the semiconductor photodetector of a wide range of direct detection imaging device of electron-beam excitation fluorescence of the invention true
Empty sample is the schematic diagram of indoor amplification.
Specific embodiment
With reference to the accompanying drawing, by embodiment, the present invention will be further described.
As shown in Figure 1, a wide range of direct detection imaging device of the electron-beam excitation fluorescence of the present embodiment includes: scanning electron
Microscopic system, sweep generator, phosphor collection coupled system, semiconductor photodetector, scanning synchronous signal acquisition device,
Collaborative Control and data processing output system；Wherein, Collaborative Control and data processing output system are as synchronously control and data
Acquisition center, with scanning electron microscope system, sweep generator, semiconductor photodetector and scanning synchronous signal acquisition
Device is connected with each other；Sweep generator is additionally coupled to the electron beam external scan regulation interface of scanning electron microscope system；
Phosphor collection coupled system is mounted in the vacuum sample room of scanning electron microscope system；Semiconductor photodetector a part position
In in the vacuum sample room of scanning electron microscope system, another part is located at outside vacuum sample room；Scanning electron microscope system
System, sweep generator and semiconductor photodetector are further connected to scanning synchronous signal acquisition device.
Scanning electron microscope system includes electron gun 11, electron-optical system 12, vacuum specimen chamber 17, signal detection system
System 13, electric control system 14 and user's control system；Wherein, 11 launching electronics beam 15 of electron gun, through electron-optical system 12
The focusing electron beam 15 for forming high quality, is incident on the sample 16 of the detection to be analyzed in vacuum specimen chamber 17, electronics
Beam 15 and the interaction of the sample 16 of detection to be analyzed generate signal, and the fluorescence of generation is collected by phosphor collection coupled system,
He is collected signal by signal detection system 13；Electric control system 14 provides electron beam external scan and triggers interface 19, electron beam
External scan regulates and controls interface 110, external signal acquisition interface 111 and signal shared interface 112；The triggering of electron beam external scan connects
Mouth 19 receives the electric mirror control signal that Collaborative Controls and data processing output system issue, and electron beam external scan regulates and controls interface
110 receive the scan control signal for the simulation that sweep generator issues, and control electron-optical system 12 is executed to be believed by scanning
The control manipulation of number generator, the synchronous fluorescence intensity signals for receiving semiconductor photodetector of external signal acquisition interface 111, can
For acquiring fluorescence intensity signals, fluorescence intensity point is finally directly acquired by user's control system of scanning electron microscope system
The image of cloth；The synchronous reading electron beam of signal detection system 13 and the sample 16 of detection to be analyzed interact generated except glimmering
Other signals other than light, and each signal scanning imaging results are presented by user's control system；Signal detection system 13 is to except glimmering
Other signals other than light are improved, and the signal shared interface 112 provided by electric control system 14, are transmitted to scanning
The synchronous data collection unit of synchronous signal acquisition device.
Scanning electron microscope system has following function: electron-optical system in 1. scanning electron microscope systems,
Signal detection system and electric control system, which can cooperate with, provides adjusting function outside Electron Beam properties of flow, respectively by electric-controlled
System processed provides electron beam external scan triggering interface 19 and electron beam external scan regulates and controls interface 110, and electron-optical system is held
The external control manipulation that row is generated by external scanning signals generator, signal detection system complete the synchronous reading of signal so that electricity is presented
Imaging results outside beamlet under regulation；2. signal detection system, electric control system in scanning electron microscope system and
User's control system, which can cooperate with, completes synchronous reception, conditioning, display function that the same condition interaction of electron beam generates signal,
Including the fluorescence detected by the semiconductor photodetector etc. outside scanning electron microscope system, respectively by signal detection system
External signal acquisition interface 111 is provided and signal is improved, electric control system is electric by the signal collaboration scanning after conditioning
The electron beam scan synchronizing signal that sub- microscopic system itself or external scanning signals generator generate is transmitted to user's manipulation
The signal received is analyzed and processed and completes to show and store by system, user's control system, which can be used for electricity
The fluorescence imaging of beamlet excitation；3. the signal detection system and electric control system in scanning electron microscope system can cooperate with
The output sharing functionality that the same condition interaction of electron beam generates signal is completed, signal and right is acquired by signal detection system respectively
Signal is improved, and the signal after conditioning is transmitted to external equipment by signal shared interface 112 by electric control system, is such as swept
Synchronous signal acquisition device is retouched, realizes that signal with the shared of external equipment, completes signal monitoring, processing and analysis by external equipment
It can be used for the signals such as secondary electron and backscattered electron with the shared of external equipment Deng, the function.
Sweep generator includes sweep generator power supply 21, scan control unit 22,23 and of digital analog converter
Analog signal conditioner output unit 24；Wherein, sweep generator power supply 21 is respectively connected to scan control unit 22, digital-to-analogue
Converter 23 and analog signal conditioner output unit 24, are provided operating voltage, are connected with each other with power supply line；Scan control unit
22, which receive the synchronous scanning that Collaborative Control and data processing output system issue, controls signal, and it is number that synchronous scanning, which controls signal,
Signal stops including scan position signal (the position coordinates signal in two-dimensional Cartesian system or polar coordinate system), single pixel point
Stay time signal and scan control mode signal (such as transversal scanning, longitudinal scanning, circular scanning, helical scanning or arbitrarily selected
Sector scanning etc.), scan control unit 22 handles the signal received, is converted to timing set by user
The scan control signal of the number of logic, the two-dimensional coordinate information comprising each position pixel in scanning area set by user,
And the scan control signal of number is exported to the synchronous data collection list of digital analog converter 23 and scanning synchronous signal acquisition device
Member；The scan control signal of number is converted and be modulated to scanning electron microscope system by digital analog converter 23 can be received
The scan control signal of simulation, gained analog signal include the two-dimensional coordinate of each position pixel in scanning area set by user
Information, and be sequentially output according to sequential logic set by user to analog signal conditioner output unit 24；Analog signal conditioner
Output unit 24 will be filtered the scan control signal of the simulation of input, noise reduction, amplification and clipping, and by the mould after conditioning
Quasi- scan control signal is transmitted to the electron beam external scan regulation interface 110 of scanning electron microscope system.
As shown in Fig. 2, phosphor collection coupled system includes reflecting surface mirror 31 and reflecting surface mirror fixation in situ device 32；Its
In, reflecting surface mirror 31 is fixed on the vacuum specimen chamber 17 of scanning electron microscope system by reflecting surface mirror fixation in situ device 32
In, a through-hole is opened on reflecting surface mirror 31, so that high quality caused by scanning electron microscope system focuses electron beam and passes through instead
Penetrate face mirror 31, thus with scanning electron microscope system sample stage carried sample interaction；Reflecting surface mirror 31 is set
Positioning is set to be determined by reflecting surface mirror fixation in situ device 32, and guarantees electron beam with the axis weight in opened hole on reflecting surface mirror 31
It is combined through the focus of reflecting surface mirror 31；Reflecting surface mirror 31 passes through the same scanning electron microscope of reflecting surface mirror fixation in situ device 32
18 rigidity of object lens and short distance of the electron-optical system of system connect, and enable to the design focus of reflecting surface mirror 31 to be located at and sweep
Within 18 lower surface of the object lens lower section 6mm for retouching the electron-optical system of electron microscopy system, scanning electron microscopy can be realized
The high-resolution imaging of mirror；Reflecting surface mirror 31 has the phosphor collection solid angle greater than 1/4 spherical surface, has high phosphor collection effect
Rate；One end of reflecting surface mirror fixation in situ device 32 is fixed on the vacuum specimen chamber of scanning electron microscope system, and in addition one
End position is flexibly adjustable, can be fixed by positioning device in the object lens 18 of the electron-optical system of scanning electron microscope system
On, and be that standard is accurately positioned its position with object lens 18；Fluorescence is generated after electron beam and sample interaction, fluorescence passes through reflection
Face mirror 31 couples the optical window 431 being incident on the shielding circuit board package casing of semiconductor photodetector, and then is incident to
The surface of large-scale semiconductor photodetection chip.
Semiconductor photodetector include: large-scale semiconductor photodetection chip 41, semiconductor chip draw circuit board 42,
Shielding circuit board package casing 43, circuit board housing locating connector 44, electric signal transmission circuit 45, electric signal transmission circuit
Vacuum peeps exchange device 46 and photo-signal amplification controller 47；Wherein, 44 location and installation of circuit board housing locating connector
On the reflecting surface mirror fixation in situ device 32 of phosphor collection coupled system；43 location and installation of shielding circuit board package casing is in electricity
On road plate shell locating connector 44；Large-scale semiconductor photodetection chip 41 is welded on semiconductor chip and draws circuit board
On 42, the two is located in shielding circuit board package casing 43, and it is semiconductor optoelectronic detection chip that semiconductor chip, which draws circuit board,
Power supply, photo-signal and the connection pin for controlling signal are provided；It is arranged on the surface of shielding circuit board package casing 43
There is optical window 431；Electric signal transmission circuit vacuum is provided on the locular wall of the vacuum specimen chamber of scanning electron microscope system
Peep exchange device 46；One end of electric signal transmission circuit 45 connects large-scale semiconductor photodetection chip 41, and the other end passes through electricity
Signal circuit vacuum peeps the photo-signal amplification controller 47 that exchange device is connected to outside vacuum sample room；Photo-signal
Amplification controller 47 is integrated with power supply required for large-scale semiconductor photodetection chip operation, through electric signal transmission electricity
Road provides power supply by the pin that semiconductor chip draws circuit board for large-scale semiconductor photodetection chip.
Photo-signal amplification controller is triggered according to the synchronous acquisition that Collaborative Control and data processing output system issue
Signal realization starts, suspends or stop signal acquisition output, and adjusts the conditioning parameter of the fluorescence intensity signals of simulation in real time,
The fluorescence intensity signals for the simulation that photo-signal amplification controller exports are improved to scanning synchronous signal acquisition device and scanning
The external signal sniffing interface of electron microscopy system is capable of the fluorescence intensity signals of received simulation, and by the mould after conditioning
Quasi- fluorescence intensity signals are transmitted to synchronous data collection unit and the scanning electron microscope system of scanning synchronous signal acquisition device
The external signal acquisition interface of system, or the fluorescence intensity signals of simulation are converted into scanning synchronous signal acquisition device and scanning electricity
The external signal sniffing interface of sub- microscopic system is capable of the fluorescence intensity signals of received number, and carries out digital signal tune
Reason, by the digital data transmission after conditioning to the synchronous data collection unit and scanning electron microscopy for scanning synchronous signal acquisition device
The external signal acquisition interface of mirror system.
Scanning synchronous signal acquisition device includes data acquisition controller 51, synchronous data collection unit 52, Data buffer
53 and data outputting unit 54；Wherein, data acquisition controller 51 and synchronous data collection unit 52,53 sum number of Data buffer
It connects according to output unit 54, and is connect with Collaborative Control with the Collaborative Control unit of data processing output system；Synchrodata is adopted
Collection unit 52 also with scanning synchronous signal acquisition device Data buffer 53 be connected, and respectively with the mould of sweep generator
Quasi- signal condition output unit 24, the photo-signal amplification controller 47 of semiconductor photodetector and scanning electron microscope
The signal shared interface 112 of the electric control system of system connects；Data buffer 53 is also connect with data outputting unit 54；Number
The data acquisition unit of Collaborative Control Yu data processing output system is additionally coupled to according to output unit 54；Data acquisition controller 51
It receives the synchronous acquisition that Collaborative Control and data processing output system issue and controls signal, be converted to data acquisition instructions and be transmitted to
Synchronous data collection unit 52 is converted to instruction data storage and is transmitted to Data buffer 53, is converted to data output instruction biography
Transport to data outputting unit 54；Data acquisition instructions control the acquisition of 52 beginning and end of synchronous data collection unit, and according to same
Sequential logic set by user sets each circuit-switched data to synchronous data collection unit 52 and is acquired in step acquisition control signal
When sequential logic；Instruction data storage is temporary according to time series stereodata data set by user in synchronous acquisition control signal
Storage 53 completes the temporary of the acquired data of synchronous data collection unit 52；Data output instruction controls signal according to synchronous acquisition
Time series stereodata data outputting unit 54 set by middle user completes the forwarding output of 53 output data of Data buffer；Together
The data acquisition instructions synchronous acquisition sweep generator that step data acquisition unit 52 is issued according to data acquisition controller 51
Output number scan control signal (according to Sequential logic output set by user user set scanning area in everybody
Set the two-dimensional coordinate information of pixel), semiconductor photodetector conditioning output fluorescence intensity signals, scanning electron microscope system
The secondary electron and backscattered electron signal of system conditioning output, and data are exported to Data buffer 53；Synchronous data collection
Unit 52 collects the fluorescence intensity in single pixel residence time (i.e. a timing cycles) at corresponding electron beam scan position
Signal and secondary electron or backscattered electron signal data, electron beam scan position is the same as fluorescence intensity signals and secondary electron or back
Scattered electron signal has one-to-one relationship；Data buffer 53 receives the data storage that data acquisition controller 51 issues and refers to
It enables, with the collected data of synchronous data collection unit institute in the temporary set time range of set format；Data output
Unit 54 reads the data in Data buffer 53, and is forwarded and exported with digital signal according to set format and sequential logic
To Collaborative Control and data processing output system.
Collaborative Control and data processing output system include that a computer 61, Collaborative Control unit 62 and data acquisition are single
Member 63；Wherein, data acquisition unit 63 is installed in the computer 61 of Collaborative Control and data processing output system, and with scanning
The data outputting unit 54 of synchronous signal acquisition device, Collaborative Control are connected with the Collaborative Control unit 62 of data processing output system
It connects；Computer 61 provides user's operating and controlling interface and interactive interface, and completes the record storage of Various types of data operation and information；Collaboration
Control unit 62 issues electric mirror control signal according to user's manipulation command, to scanning electron microscope system, sends out to scanning signal
The scan control unit 22 of raw device issues synchronous scanning control signal, amplifies control to the photo-signal of semiconductor photodetector
Device 47 issues synchronous acquisition trigger signal, issues synchronous acquisition control to the data acquisition controller 51 of scanning synchronous signal acquisition device
Signal processed issues data acquisition instructions and sequential logic to the data acquisition unit 63 of Collaborative Control and data processing output system
Signal is controlled, and completes the feedback interaction for carrying out signal implementation progress with connected each section, realizes that measuring device each section is same
Synthetic operation is walked, finally to user's operating and controlling interface of computer 61 and interactive interface feedback control and parameter information；Synchronous scanning
Controlling signal, synchronous acquisition trigger signal has synchronous temporal and logic relation with synchronous acquisition control signal, and it is synchronous to issue one
It is synchronous to issue synchronous acquisition trigger signal and synchronous acquisition control signal when scan control signal, it realizes in electronics beam scanning position
It sets in the scanning residence time remained unchanged, while carrying out the acquisition of fluorescence intensity signals, finally carried out in real time by computer 61
Synchronous signal output and display, complete a wide range of direct detection imaging function of electron-beam excitation fluorescence；Collaborative Control unit 62
Be installed in the computer 61 of Collaborative Control and data processing output system, and with the electron beam of scanning electron microscope system outside
Portion scanning triggering interface 19, the scan control unit 22 of sweep generator, semiconductor photodetector photo-signal put
Big controller 47, the data acquisition controller 51 for scanning synchronous signal acquisition device, Collaborative Control and data processing output system
Data acquisition unit 63 is connected；Data acquisition unit 63 can summarize acquisition by the collected number of scanning synchronous signal acquisition device
It is believed that number, data acquisition instructions and time series stereodata signal further according to Collaborative Control unit 62 extremely count data signal transmission
Calculation machine 61 carries out aggregation process.
It is finally noted that the purpose for publicizing and implementing mode is to help to further understand the present invention, but ability
The technical staff in domain is understood that without departing from the spirit and scope of the invention and the appended claims, various replacements and
Modification is all possible.Therefore, the present invention should not be limited to embodiment disclosure of that, the scope of protection of present invention with
Subject to the range that claims define.
Claims (8)
1. a kind of a wide range of direct detection imaging device of electron-beam excitation fluorescence, which is characterized in that the imaging device includes: to sweep
Retouch electron microscopy system, sweep generator, phosphor collection coupled system, semiconductor photodetector, scanning synchronization signal
Collector, Collaborative Control and data processing output system；Wherein, the Collaborative Control is with data processing output system as synchronous
Control & data acquisition center, it is same with scanning electron microscope system, sweep generator, semiconductor photodetector and scanning
Signal picker is walked to be connected with each other；The sweep generator is additionally coupled to outside the electron beam of scanning electron microscope system
Scanning regulation interface；The phosphor collection coupled system is mounted in the vacuum sample room of scanning electron microscope system；It is described
Semiconductor photodetector a part is located in the vacuum sample room of scanning electron microscope system, and another part is located at vacuum sample
It is outdoor；It is same that the scanning electron microscope system, sweep generator and semiconductor photodetector are further connected to scanning
Walk signal picker；The Collaborative Control and data processing output system issue electric mirror control signal, and it is aobvious to be transmitted to scanning electron
The electron beam external scan of micromirror systems triggers interface, and control scanning electron microscope system receives external signal；Collaborative Control
Synchronous scanning is issued to sweep generator with data processing output system and controls signal, and sweep generator generates number
Scan control signal, be transmitted to scanning synchronous signal acquisition device, and by number scan control signal transformation conditioning at simulation
Scan control signal after, be transmitted to scanning electron microscope system electron beam external scan regulation interface, control scanning electricity
The electron beam scan position of sub- microscopic system and scanning residence time；Scanning electron microscope system launching electronics beam, irradiation
Onto the sample of the detection to be analyzed in the vacuum sample room of scanning electron microscope system, the sample of detection to be analyzed is excited to produce
Raw fluorescence；Phosphor collection coupled system collect fluorescence, and in vacuum sample room by the fluorescence to expose thoroughly in range with identical
Coupling efficiency is transmitted to semiconductor photodetector；Fluorescence is converted to photoelectric current letter in vacuum sample room by semiconductor photodetector
Number, and photo-signal is transmitted to outside vacuum sample room, Collaborative Control and data processing output system issue synchronize adopt
Collect under trigger signal control, photo-signal is converted into fluorescence intensity signals, and fluorescence intensity signals are transmitted separately to sweep
Retouch the external signal acquisition interface of synchronous signal acquisition device and scanning electron microscope system；Scanning synchronous signal acquisition device is being assisted
Under the synchronous acquisition control signal control issued with control with data processing output system, sweep generator is received respectively
The scan control signal of number, the fluorescence intensity signals of semiconductor photodetector and scanning electron microscope system generate secondary
Electronics or backscattered electron signal, then Collaborative Control and data processing output system will be transmitted to after signal aggregation process；By assisting
It is controlled with synchronous scanning control signal, synchronous acquisition trigger signal and synchronous acquisition that control is issued with data processing output system
Signal has synchronous temporal and logic relation, synchronous to issue corresponding synchronous acquisition when issuing a synchronous scanning control signal
Trigger signal and synchronous acquisition control signal, realize within the scanning residence time that electron beam scan position remains unchanged, big
The acquisition that fluorescence intensity signals are carried out in scanning range, finally carries out real-time synchronization by Collaborative Control and data processing output system
Signal processing analysis and show output；The phosphor collection coupled system includes: reflecting surface mirror and reflecting surface mirror fixation in situ
Device；Wherein, the reflecting surface mirror is adopted as rotation ellipsoid concave mirror or paraboloid of revolution concave mirror；Reflecting surface mirror
It is fixed in the vacuum specimen chamber of scanning electron microscope system by reflecting surface mirror fixation in situ device, opens one on reflecting surface mirror
Through-hole, so that the electron beam that high quality caused by scanning electron microscope system focuses passes through reflecting surface mirror, thus with wait divide
The sample interaction of analysis detection；Fluorescence is generated after electron beam and the interaction of the sample of detection to be analyzed, fluorescence passes through reflection
Mirror coupling in face is incident to semiconductor photodetector；The semiconductor photodetector include: large-scale semiconductor photodetection chip,
Semiconductor chip draws circuit board, shielding circuit board package casing, circuit board housing locating connector, electric signal transmission electricity
Road, electric signal transmission circuit vacuum peep exchange device and photo-signal amplification controller；Wherein, the circuit board housing positioning connects
Connection device location and installation is on the reflecting surface mirror fixation in situ device of phosphor collection coupled system；The shielding circuit board encapsulation is outer
Shell location and installation is on circuit board housing locating connector；The large-scale semiconductor photodetection chip is welded on semiconductor
Chip is drawn on circuit board, and the two is located in shielding circuit board package casing, and it is semiconductor light that semiconductor chip, which draws circuit board,
Electric detection chip provides power supply, photo-signal and the connection pin for controlling signal；In shielding circuit board package casing
Surface is provided with optical window；Electric signal transmission circuit is provided on the locular wall of the vacuum specimen chamber of scanning electron microscope system
Vacuum peeps exchange device；One end of the electric signal transmission circuit connects large-scale semiconductor photodetection chip, and the other end passes through
Electric signal transmission circuit vacuum peeps the photo-signal amplification controller that exchange device is connected to outside vacuum sample room；The photoelectric current
Signal amplification controller is integrated with power supply required for large-scale semiconductor photodetection chip operation, through electric signal transmission
Circuit provides power supply by the pin that semiconductor chip draws circuit board for large-scale semiconductor photodetection chip；Scanning electron
Fluorescence caused by the electron-beam excitation sample of microscopic system, through the optical window on shielding circuit board package casing surface,
It is incident on large-scale semiconductor photodetection chip, fluorescence is converted into photo-signal, electricity is drawn by semiconductor chip
For pin on the plate of road through electric signal transmission circuit transmission to photo-signal amplification controller, photo-signal amplification controller will
The photo-signal of large-scale semiconductor photodetection chip output, which is converted to, can be scanned synchronous signal acquisition device and scanning
The fluorescence intensity signals of the received simulation of electron microscopy system；Photo-signal amplification controller is connected to scanning synchronization signal
The synchronous data collection unit and Collaborative Control of collector and the Collaborative Control unit of data processing output system；Photo-signal
The synchronous acquisition trigger signal realization that amplification controller is issued according to Collaborative Control and data processing output system starts, suspend or
The acquisition output of person's stop signal, and the conditioning parameter of the fluorescence intensity signals of simulation is adjusted in real time, photo-signal is amplified and is controlled
The fluorescence intensity signals of the simulation of device output processed are improved to scanning synchronous signal acquisition device and scanning electron microscope system institute energy
The fluorescence intensity signals of enough received simulations, and the fluorescence intensity signals of the simulation after conditioning are transmitted to scanning synchronization signal and are adopted
The synchronous data collection unit of storage and the external signal acquisition interface of scanning electron microscope system, or by the fluorescence of simulation
Strength signal be converted to scanning synchronous signal acquisition device and scanning electron microscope system be capable of received number fluorescence it is strong
Signal is spent, and carries out digital signal condition, by the digital data transmission after conditioning to the same step number for scanning synchronous signal acquisition device
According to acquisition unit.
2. imaging device as described in claim 1, which is characterized in that the scanning electron microscope system include: electron gun,
Electron-optical system, vacuum specimen chamber, signal detection system, electric control system and user's control system；Wherein, the electronics
Rifle launching electronics beam, through electron-optical system formed high quality focusing electron beam, be incident in vacuum sample room to
On the sample of analysis detection, the sample interaction of electron beam and detection to be analyzed generates signal, and the fluorescence of generation is received by fluorescence
Collect coupled system to collect, other signals are collected by signal detection system；The electric control system provides electron beam external scan
Trigger interface, electron beam external scan regulation interface, external signal acquisition interface and signal shared interface；Outside the electron beam
The electric mirror control signal that scanning triggering interface Collaborative Control and data processing output system issue, electron beam external scan tune
The scan control signal for the simulation that interface sweep generator issues is controlled, control electron-optical system is executed to be believed by scanning
The control manipulation of number generator, the synchronous fluorescence intensity signals for receiving semiconductor photodetector of external signal acquisition interface, finally
The image of fluorescence intensity distribution is directly acquired by user's control system of scanning electron microscope system；The signal detection system
Other signals caused by the synchronous sample interaction for reading electron beam and detection to be analyzed in addition to fluorescence, and by user
Each signal scanning imaging results are presented in control system；The signal detection system adjusts other signals in addition to fluorescence
Reason, and the signal shared interface provided by electric control system, the synchrodata for being transmitted to scanning synchronous signal acquisition device are adopted
Collect unit.
3. imaging device as described in claim 1, which is characterized in that the sweep generator includes: scanning signal hair
Raw device power supply, scan control unit, digital analog converter and analog signal conditioner output unit；Wherein, the scanning signal occurs
Device power supply is respectively connected to scan control unit, digital analog converter and analog signal conditioner output unit；The scan control list
Member receives the synchronous scanning that Collaborative Control and data processing output system issue and controls signal, and it is number that synchronous scanning, which controls signal,
Signal；The scan control unit handles the signal received, is converted to sequential logic set by user
The scan control signal of number, and the scan control signal of number is exported respectively to digital analog converter and scanning synchronization signal and is adopted
The synchronous data collection unit of storage；The scan control signal of number is converted and is modulated to scanning electron by the digital analog converter
Microscopic system is capable of the scan control signal of received simulation, and according to sequential logic set by user be sequentially output to
Analog signal conditioner output unit；The analog signal conditioner output unit improves the analog signal of input, and will adjust
The scan control signal of simulation after reason is transmitted to the electron beam external scan regulation interface of scanning electron microscope system.
4. imaging device as described in claim 1, which is characterized in that the large-scale semiconductor photodetection chip is by fluorescence
Photo-signal is converted to, using in silicon photomultiplier, avalanche photodide, photodiode and miniature photomultiplier
One kind.
5. imaging device as described in claim 1, which is characterized in that the fluorescence escape efficiency of the optical window 90% with
On.
6. imaging device as described in claim 1, which is characterized in that the shielding circuit board package casing except optical window with
Outer part uses lightweight metal material.
7. imaging device as described in claim 1, which is characterized in that the electric signal transmission circuit is using flexible shielding electricity
Cable.
8. a kind of control method of a wide range of direct detection imaging device of electron-beam excitation fluorescence as described in claim 1,
Be characterized in that, the control method the following steps are included:
1) Collaborative Control and data processing output system issue electric mirror control signal, are transmitted to the electricity of scanning electron microscope system
Beamlet external scan triggers interface, and control scanning electron microscope system receives external signal；
2) Collaborative Control and data processing output system issue synchronous scanning to sweep generator and control signal, scanning signal
Generator generate number scan control signal, be transmitted to scanning synchronous signal acquisition device, and by number scan control signal
After transformation conditioning is at the scan control signal of simulation, the electron beam external scan regulation for being transmitted to scanning electron microscope system is connect
Mouthful, control electron beam scan position and the scanning residence time of scanning electron microscope system；
3) scanning electron microscope system launching electronics beam, be irradiated in the vacuum sample room of scanning electron microscope system to
On the sample of analysis detection, the sample of detection to be analyzed is excited to generate fluorescence；
4) phosphor collection coupled system collect fluorescence, and in vacuum sample room by the fluorescence to expose thoroughly in range with identical traffic
Coupling efficiency is transmitted to semiconductor photodetector；
5) fluorescence is converted to photo-signal in vacuum sample room by semiconductor photodetector, and is transmitted to vacuum specimen chamber
Outside, under the synchronous acquisition trigger signal control that Collaborative Control and data processing output system issue, photo-signal is converted
For fluorescence intensity signals, and fluorescence intensity signals are transmitted separately to scanning synchronous signal acquisition device and scanning electron microscope system
The external signal acquisition interface of system；
6) scanning synchronous signal acquisition device controls signal control in the synchronous acquisition that Collaborative Control and data processing output system issue
Under system, the scan control signal of the number of sweep generator, the fluorescence intensity signals of semiconductor photodetector are received respectively
The secondary electron or backscattered electron signal generated with scanning electron microscope system, then association will be transmitted to after signal aggregation process
With control and data processing output system；
7) the synchronous scanning control signal that is issued by Collaborative Control and data processing output system, synchronous acquisition trigger signal and same
It walks acquisition control signal and synchronizes and issue accordingly when issuing a synchronous scanning control signal with synchronous temporal and logic relation
Synchronous acquisition trigger signal and synchronous acquisition control signal, realize when scanning that electron beam scan position remains unchanged stops
In, the acquisition of fluorescence intensity signals is carried out in the range that exposes thoroughly, finally by Collaborative Control and data processing output system into
The signal processing analysis of row real-time synchronization simultaneously shows output.
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| CN111579064B (en) * | 2020-04-26 | 2022-06-10 | 东南大学 | Ultraviolet/visible light signal detection system and method based on quantum dot fluorescence time delay |
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| JPS573358A (en) * | 1980-06-06 | 1982-01-08 | Hitachi Ltd | Detector for electron beam device |
| US4900932A (en) * | 1987-09-05 | 1990-02-13 | Carl-Zeiss-Stiftung | Cathodoluminescence detector utilizing a hollow tube for directing light radiation from the sample to the detector |
| CN103871811A (en) * | 2009-02-06 | 2014-06-18 | 株式会社日立高新技术 | Charged particle radiation device and detector |
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