CN108269902A - A kind of LED encapsulation structure and its packaging method - Google Patents
A kind of LED encapsulation structure and its packaging method Download PDFInfo
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- CN108269902A CN108269902A CN201810039003.4A CN201810039003A CN108269902A CN 108269902 A CN108269902 A CN 108269902A CN 201810039003 A CN201810039003 A CN 201810039003A CN 108269902 A CN108269902 A CN 108269902A
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- 238000005538 encapsulation Methods 0.000 title claims abstract description 28
- 238000000034 method Methods 0.000 title claims description 11
- 238000004806 packaging method and process Methods 0.000 title description 7
- 239000000758 substrate Substances 0.000 claims abstract description 105
- 229910000833 kovar Inorganic materials 0.000 claims abstract description 44
- 229910002065 alloy metal Inorganic materials 0.000 claims abstract description 41
- 239000011521 glass Substances 0.000 claims abstract description 38
- 230000001681 protective effect Effects 0.000 claims abstract description 11
- 229910017083 AlN Inorganic materials 0.000 claims description 31
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 31
- 239000000463 material Substances 0.000 claims description 18
- 229910052751 metal Inorganic materials 0.000 claims description 17
- 239000002184 metal Substances 0.000 claims description 17
- 239000011324 bead Substances 0.000 claims description 13
- 229910000679 solder Inorganic materials 0.000 claims description 13
- 238000003466 welding Methods 0.000 claims description 13
- 229910045601 alloy Inorganic materials 0.000 claims description 10
- 239000000956 alloy Substances 0.000 claims description 10
- 229910018054 Ni-Cu Inorganic materials 0.000 claims description 7
- 229910018481 Ni—Cu Inorganic materials 0.000 claims description 7
- 238000003698 laser cutting Methods 0.000 claims description 7
- 230000005540 biological transmission Effects 0.000 claims description 6
- 239000004020 conductor Substances 0.000 claims description 5
- 230000027756 respiratory electron transport chain Effects 0.000 claims description 4
- 230000004075 alteration Effects 0.000 abstract description 9
- 238000007788 roughening Methods 0.000 abstract description 4
- 230000017525 heat dissipation Effects 0.000 abstract description 3
- 230000005764 inhibitory process Effects 0.000 abstract description 3
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 abstract description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 12
- 238000005516 engineering process Methods 0.000 description 9
- 238000001228 spectrum Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 6
- 238000004506 ultrasonic cleaning Methods 0.000 description 6
- 239000004744 fabric Substances 0.000 description 5
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- 238000005520 cutting process Methods 0.000 description 4
- 238000005286 illumination Methods 0.000 description 4
- 244000137852 Petrea volubilis Species 0.000 description 3
- 238000005275 alloying Methods 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000001291 vacuum drying Methods 0.000 description 3
- 230000000007 visual effect Effects 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 101100192157 Mus musculus Psen2 gene Proteins 0.000 description 2
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- 239000010949 copper Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
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- MEYZYGMYMLNUHJ-UHFFFAOYSA-N tunicamycin Natural products CC(C)CCCCCCCCCC=CC(=O)NC1C(O)C(O)C(CC(O)C2OC(C(O)C2O)N3C=CC(=O)NC3=O)OC1OC4OC(CO)C(O)C(O)C4NC(=O)C MEYZYGMYMLNUHJ-UHFFFAOYSA-N 0.000 description 2
- 241001062009 Indigofera Species 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
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- 238000001816 cooling Methods 0.000 description 1
- 235000019628 coolness Nutrition 0.000 description 1
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- 239000005357 flat glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The present invention provides a kind of LED encapsulation structure, and including package main body, package main body includes：Substrate, surface are equipped with kovar alloy metal frame, and kovar alloy metal frame is equipped with conductive layer, and conductive layer is equipped with die bond region, and die bond region is used to install LED chip；Glass substrate is installed, glass substrate periphery is covered with protective cover, and protection cover outer surface is concaveconvex structure on die bond region；Edge filter and diffuser, the light that diffuser reflects for reception from edge filter are further included in package main body.The present invention can make LED rapid heat dissipations, resistance to UV irradiations, high temperature resistant, color inhibition by more than encapsulating structure, convenient for industrialization；Enable the path of light that light is excited consistent, all no color differnece or aberration very little in terms of all angles；The light that can be launched by conductive layer for reflecting LED chip becomes reflecting layer；By the way that using concaveconvex structure, protective cover is realized effectively and simply the roughening on LED package surface, so as to improve the luminous efficiency of high efficiency LED.
Description
Technical field
Present invention design field of semiconductor package, especially a kind of LED encapsulation structure and its packaging method.
Background technology
LED is referred to as forth generation lighting source or green light source, has the characteristics that energy-saving and environmental protection, long lifespan, small,
It is widely used in the fields such as various instructions, display, decoration, backlight, general lighting and urban landscape.According to using function not
Together, presentation of information, signal lamp, Vehicular lamp, liquid crystal screen backlight, five major class of general illumination can be divided into.
LED product is mainly used in backlight, color screen, three big field of room lighting.Future is constantly ripe in technology and leads
Under the influence of the factors such as incandescent lamp climax rise that the product price of cause declines and the new round whole world prohibits selling, room lighting will substitute
Backlight becomes future LED fastest-rising subdivision field.In addition, it is driven in recent years in the product up-gradation such as small clearance display screen factor
Under dynamic, LED product speedup is also constantly promoted, and the trend of solid growth is presented.
At present, common LED package coolings are slow, irradiated intolerant to UV, non-refractory, easily turn yellow, are not easy to industrialization.
Invention content
The object of the present invention is to provide a kind of simple in structure, convenient for industrialization, aberration is small, and the LED that illumination effect is good
Encapsulating structure and its packaging method.
The purpose of the present invention is what is realized using following technical scheme.
A kind of LED encapsulation structure, including package main body, the package main body includes：
Substrate；
The surface is equipped with kovar alloy metal frame, and the outer edge size of the kovar alloy metal frame is less than the substrate
Size；
The kovar alloy metal frame is quadrangle, and the kovar alloy metal frame is equipped with conductive layer, is set on the conductive layer
There is die bond region；
The die bond region is used to install LED chip；
Glass substrate is installed on the die bond region, including glass substrate and is vertically distributed in the multiple of the glass substrate
Pixel, each pixel include multiple sub-pixel microcavitys, and the glass substrate periphery is covered with protective cover, the protection cover outer surface
For concaveconvex structure；And
Edge filter and diffuser are further included in the package main body, the diffuser reflects for receiving from the edge filter
Light.
Specifically, the substrate is the aluminium nitride substrate with metallic circuit.
Specifically, the material of the kovar alloy metal frame be Mo-Ni-Cu alloys, and the kovar alloy metal frame with
The substrate is welded to connect.
Specifically, the LED chip is welded to connect with the die bond region.
Specifically, the material of the conductive layer is selected from metal, conductive compound and the high molecular material for being mixed with conductive materials
Any one of, the conductive layer is：The conductive layer that single conductive layer or plurality of conductive layers and insulating layer are alternatively formed.
Specifically, the concaveconvex structure is micro-structure, and the order of magnitude of the micro-structure is nanoscale.
Further, the sub-pixel microcavity is set in the glass substrate, and is up stacked gradually from glass substrate
There are opaque anode layer, hole transmission layer, luminescent layer, electron transfer layer and semitransparent cathode layer, every layer far from the glass lined
The top surface at bottom has identical curvature.
The present invention provides another LED encapsulation methods, include the following steps：
Step 1, circuit of the welding with metal on the substrate of sheet, and the kovar alloy metal is welded on the substrate
Frame；
Step 2 welds conductive layer on the kovar alloy metal frame；
LED chip is fixed on the conductive layer by step 3 by welding in the conductive layer upper surface；
Step 4, above the LED chip, glass substrate is installed, and is covered with protective cover in the glass substrate periphery, is made
LED lamp bead encapsulation is obtained to complete；
Step 5, by the way of laser cutting, LED lamp bead from the substrate of sheet is cut down, is divided into single LED
Lamp bead.
Specifically, the substrate is aluminium nitride substrate, and the material of the kovar alloy metal frame is Mo-Ni-Cu alloys, institute
It states and is welded under the conditions of vacuum high-temperature between aluminium nitride substrate and kovar alloy, Ag70-Cu28-Ti2 activity may be used in solder
Solder.
Specifically, the outer edge size of the kovar alloy metal frame is less than the size of the substrate.
Beneficial effects of the present invention are：1st, the kovar alloy metal frame purpose smaller than substrate is in order to which structure is convenient for batch
Change, after the completion of entire encapsulation, take the mode of laser cutting, many lamp beads are cut down from the big substrate of sheet,
The place that position, that is, aluminium nitride of cutting goes out greatly than that can cut down metal frame；
2nd, by more than encapsulating structure, LED rapid heat dissipations, resistance to UV irradiations, high temperature resistant, color inhibition can be made；
3rd, enable the path of light that light is excited consistent, all no color differnece or aberration very little in terms of all angles；
4th, cloth circuits can be not only used for by conductive layer, can also be used to the light that reflection LED chip is launched becomes anti-
Penetrate layer；
5th, by the way that using concaveconvex structure, protective cover is realized effectively and simply the roughening on LED packaging bodies surface, so as to carry
The luminous efficiency of high efficiency LED is risen.
Above description is only the general introduction of technical solution of the present invention, in order to better understand the technological means of the present invention,
And it can be implemented in accordance with the contents of the specification, and in order to allow the above and other objects, features and advantages of the present invention can
It is clearer and more comprehensible, special below to lift preferred embodiment, and coordinate attached drawing, detailed description are as follows.
Description of the drawings
Fig. 1 is the schematic diagram for the LED encapsulation structure that first embodiment of the invention provides；
Fig. 2 is the outer surface schematic diagram of sub-pixel microcavity；
Fig. 3 is the structure diagram of sub-pixel microcavity；
Fig. 4 is the schematic diagram of the light route of sub-pixel microcavity；
Fig. 5 is the schematic diagram of Fig. 3 light routes；
Fig. 6 is the schematic diagram for the LED encapsulation structure that second embodiment of the invention provides；
Specific embodiment
For the ease of understanding the present invention, the present invention is described more fully below with reference to relevant drawings.In attached drawing
Give the better embodiment of the present invention.But the present invention can realize in many different forms, however it is not limited to herein
Described embodiment.On the contrary, the purpose of providing these embodiments is that make to understand more the disclosure
Add thorough and comprehensive.
Unless otherwise defined, all of technologies and scientific terms used here by the article is with belonging to technical field of the invention
The normally understood meaning of technical staff is identical.Term used in the description of the invention herein is intended merely to description tool
The purpose of the embodiment of body, it is not intended that in the limitation present invention.Term as used herein " and/or " including one or more
The arbitrary and all combination of relevant Listed Items.
Referring to Fig. 1, it is a kind of LED encapsulation structure that first embodiment of the invention provides, including package main body 100, institute
Package main body is stated to include：Substrate 110, substrate 110 are the aluminium nitride substrate 110 with metallic circuit.Aluminium nitride substrate 110 is pottery
One kind of porcelain substrate.Aluminium nitride substrate 110 has higher thermal conductivity, and the thermal conductivity of aluminium nitride substrate 110 is 170 ~ 230w/
Mk, the thermal conductivity the high more product can be helped to radiate.And aluminium nitride substrate 110 has more matched coefficient of thermal expansion so that LED light
Too large deformation will not be generated in temperature difference drastic change leads to internal metallic circuit desoldering.Meanwhile the solderability of aluminium nitride substrate 110
More preferably, welding can be repeated several times.
In this embodiment, aluminium nitride substrate 110 is according to the requirement of product, and production method is also different, including thin
Membrane technology, directly covers copper method and laser activation metallization technology at thick film technology.
Further, 110 top of substrate is equipped with kovar alloy metal frame 120, and kovar alloy metal frame 120 is quadrangle,
The outer edge size of kovar alloy metal frame 120 is less than the size of substrate 110, and kovar alloy metal frame 120 is smaller than substrate 110
Purpose be in order to which structure is convenient for mass, after the completion of entire encapsulation, the mode of laser cutting is taken, by many lamp beads from sheet
Big substrate on cut down, position, that is, aluminium nitride of cutting is than place that kovar alloy metal frame 120 goes out greatly.
Specifically, the material of the kovar alloy metal frame 120 is Mo-Ni-Cu alloys, and aluminium nitride substrate 110 and can
It cuts down and is welded under the conditions of vacuum high-temperature between alloying metal frame 120, Ag70-Cu28-Ti2 activated solders may be used in solder.Weldering
Before connecing, first with the face of weld of sand paper grinding aluminium nitride substrate 110, make, by mortgage surfacing, then with alcohol washes, putting
Enter in acetone soln with ultrasonic cleaning about 15min, remove oil stain for being soldered surface etc..Ag70-Cu28-Ti2 activated solders
The oxide layer on surface is first removed before use, then places into and ultrasonic cleaning is carried out in acetone soln, it is finally excellent in vacuum degree
In 1.0 X 10-3It is welded to connect in the vacuum drying oven of Pa.
In this embodiment, welding temperature 1150K, heating rate are 10 DEG C/min, are distinguished in 1000K and 1150K
Keep the temperature 10min.
Further, the kovar alloy metal frame 120 is equipped with conductive layer（It is not shown）.Specifically, the material of conductive layer
Expect to be selected from any one of metal, conductive compound and the high molecular material for being mixed with conductive materials, conductive layer can be led for individual layer
The conductive layer that electric layer or plurality of conductive layers and insulating layer are alternatively formed can not only be used for cloth circuits by conductive layer, may be used also
To be used for reflecting LED chip（It is not shown）The light launched becomes reflecting layer.
Further, the conductive layer is equipped with die bond region（It is not shown）, die bond region is used to install LED chip, LED
Chip is welded to connect with die bond region.
Further, Fig. 2 ~ 3 are please referred to, glass substrate 200 are installed on the die bond region, including glass substrate
200 and multiple pixels of the glass substrate 200 are vertically distributed in, each pixel includes multiple sub-pixel microcavitys.The present embodiment
In, each pixel includes 203 3 red sub-pixel microcavity 201, green sub-pixels microcavity 202 and blue subpixels microcavity pictures
Plain microcavity.Each sub-pixel microcavity is semicylinder shape, is semicircle on section, in this way, the light that light is excited is micro-
The distance that intracavitary is undergone is all consistent, and generated resonance spectrum is also consistent, therefore it is inclined not have in terms of all angles color
Difference.Sub-pixel microcavity is set in the glass substrate, and opaque anode layer 210 is up stacked gradually from glass substrate 200（Such as
Ag）, barrier layer 220（Such as Ag20）, hole transmission layer 230（NPB）, luminescent layer 240（Alg3）, electron transfer layer 250（Al/
LiF）And semitransparent cathode layer 260（Such as Ag）.Opaque anode layer 210 is to be set to arc-shaped in glass substrate, other layers
For the fan layer stacked gradually, both ends are located in glass substrate 200, and each layer has identical curvature.When making, grayscale is used
Mask plate makes the shape of each tunic.
Further clearly to illustrate that this scheme of the invention used can improve the aberration problem of LED.It is demonstrate,proved from principle
Its bright effect please coordinate with reference to Fig. 4, vertical direction of the light 1 along each layer, therefore light 1 does not become in sub-pixel microcavity
Resonance, some light 4 are emitted to outside sub-pixel microcavity.
It resonates in the chamber that the launch wavelength of sub-pixel microcavity can be formed with opaque anode layer, some light 2 is emitted
To outside chamber；And light 3 deviates the vertical direction of each layer, dimension can be represented with following formula：
λ=2πL/（2πm-|Φ1|-|Φ2|）
Wherein Φ 1 and Φ 2 is illustrated respectively in the phase shift generated on 260 interface of opaque anode layer 210 and semitransparent cathode layer, table
It is as follows up to formula：
1,2=arctan of Φ [2Kmncos θ/(n2cos2 θ-Nm2-Km2)] (S-polarization light)
1,2=arctan of Φ { 2ncos θ (Nm2Km+Km3)/[n2 (Nm2+Km2)-cos2 θ (Nm2-Km2) 2] } (P polarization light)
Wherein Nm and Km represents the refractive index and extinction coefficient of metal respectively；θ is that the light generated in device is mapped on metal electrode
With the angle of electrode normal direction；N is the refractive index of the organic matter adjacent with metal.
It is, wavelength without generate resonance relevant with wavelength in the wavelength of sub-pixel microcavity resonance according to above-mentioned formula
It is only related to luminescent material, therefore the light 2 and 4 spectrum of light being emitted to outside sub-pixel microcavity are different, therefore chromaticity coordinates
Value is also different, so human eye sees that light 2 and light 4 can generate aberration.
By above-mentioned deep analysis and research, after LED is redesigned, then come the light path of analyzing LED, Fig. 5 please be join.Light
Line 1 and light 3 are propagated, therefore resonance can be formed in sub-pixel microcavity, and it goes out along the axis direction of each layer flex layers
The light 2 penetrated is identical with the spectrum of light 4, so chromaticity coordinates value is identical.And light 5 and light 7 is not along the axis direction of each layer
It propagates, therefore resonance is formed not in sub-pixel microcavity, some light 6 and light 8 are projected outside chamber, and federation and the light of resonance
Line generates overlapping.Therefore no matter this structure watches at which visual angle, can all have two parts light：A part be
The light of resonance and then outgoing is formed in sub-pixel microcavity, this some light intensity is relatively narrow compared with strong and spectrum line, another part
It is the light of off-resonance outgoing, this some light intensity is weaker and spectrum line is wider.Due to the present embodiment sub-pixel microcavity
Semicircle is shaped to, so no matter being watched at that visual angle, the spectrum for the light that resonates is identical, the light of off-resonance light
Spectrum is also identical, therefore no matter in which visual angle viewing, chromaticity coordinates value all same, so as to reduce aberration.
In addition, the semicylinder shape of each of which sub-pixel microcavity both can laterally arrange, i.e. the pixel of semi-cylindrical
Axis direction for laterally, so in above-below direction watch when no color differnece, but in left and right directions watch when have aberration；It can also indulge
To arrangement, i.e. the axis direction of the pixel of semi-cylindrical is longitudinal, no color differnece when watching in left and right directions in this way, but upper and lower
There is aberration in direction when watching.
Further, 200 periphery of glass substrate is covered with protective cover（It is not shown）, protection cover outer surface is concave-convex knot
Structure, concaveconvex structure are micro-structure, and the order of magnitude of micro-structure is nanoscale, effectively and simple by the way that protective cover is used concaveconvex structure
Single roughening for realizing LED packaging bodies surface, so as to improve the luminous efficiency of high efficiency LED.
Further, edge filter and diffuser are further included in the package main body, the diffuser is used to receive from side
The light of edge filter reflection, wherein, edge filter is positioned over above LED chip, transmission edge increase with the incidence angle of light and
Shift to shorter wavelength.The edge of the optical filter of low and high wavelength is shifted with the increase of incidence angle, leads to what LED was radiated
Increase function of the reflection as illumination incident angle.
It is a kind of LED encapsulation structure that second embodiment of the invention provides please refer to 6, including package main body 100,
The package main body includes：Substrate 110, substrate 110 are the aluminium nitride substrate 110 with metallic circuit.Aluminium nitride substrate 110 is
One kind of ceramic substrate.Aluminium nitride substrate 110 has higher thermal conductivity, and the thermal conductivity of aluminium nitride substrate 110 is 170 ~ 230w/
Mk, the thermal conductivity the high more product can be helped to radiate.And aluminium nitride substrate 110 has more matched coefficient of thermal expansion so that LED light
Too large deformation will not be generated in temperature difference drastic change leads to internal metallic circuit desoldering.Meanwhile the solderability of aluminium nitride substrate 110
More preferably, welding can be repeated several times.
In this embodiment, aluminium nitride substrate 110 is according to the requirement of product, and production method is also different, including thin
Membrane technology, directly covers copper method and laser activation metallization technology at thick film technology.
Further, 110 top of substrate is equipped with kovar alloy metal frame 120, and kovar alloy metal frame 120 is quadrangle,
The outer edge size of kovar alloy metal frame 120 is less than the size of substrate 110, and kovar alloy metal frame 120 is smaller than substrate 110
Purpose be in order to which structure is convenient for mass, after the completion of entire encapsulation, the mode of laser cutting is taken, by many lamp beads from sheet
Big substrate on cut down, position, that is, aluminium nitride of cutting is than place that kovar alloy metal frame 120 goes out greatly.
Specifically, the material of the kovar alloy metal frame 120 is Mo-Ni-Cu alloys, and aluminium nitride substrate 110 and can
It cuts down and is welded under the conditions of vacuum high-temperature between alloying metal frame 120, Ag70-Cu28-Ti2 activated solders may be used in solder.Weldering
Before connecing, first with the face of weld of sand paper grinding aluminium nitride substrate 110, make, by mortgage surfacing, then with alcohol washes, putting
Enter in acetone soln with ultrasonic cleaning about 15min, remove oil stain for being soldered surface etc..Ag70-Cu28-Ti2 activated solders
The oxide layer on surface is first removed before use, then places into and ultrasonic cleaning is carried out in acetone soln, it is finally excellent in vacuum degree
In 1.0 X 10-3It is welded to connect in the vacuum drying oven of Pa.
In this embodiment, welding temperature 1150K, heating rate are 10 DEG C/min, are distinguished in 1000K and 1150K
Keep the temperature 10min.
Further, the kovar alloy metal frame 120 is equipped with conductive layer（It is not shown）.Specifically, the material of conductive layer
Expect to be selected from any one of metal, conductive compound and the high molecular material for being mixed with conductive materials, conductive layer can be led for individual layer
The conductive layer that electric layer or plurality of conductive layers and insulating layer are alternatively formed can not only be used for cloth circuits by conductive layer, may be used also
To be used for reflecting LED chip（It is not shown）The light launched becomes reflecting layer.
Further, the conductive layer is equipped with die bond region（It is not shown）, die bond region is used to install LED chip, LED
Chip is welded to connect with die bond region.
Further, flat glass substrate 200 is installed, the size of glass substrate 200 just and can be cut down on die bond region
Alloying metal frame 120 is in the same size.
Further, edge filter and diffuser are further included in the package main body, diffuser is filtered for receiving from edge
The light of device reflection, wherein, edge filter is positioned over above LED chip, and transmission edge is as the incidence angle of light increases and shifts to
Shorter wavelength.The edge of the optical filter of low and high wavelength is shifted with the increase of incidence angle, the increase that LED is caused to radiate
Reflect the function as illumination incident angle.
The present invention provides another LED encapsulation methods, include the following steps：
Step 1, circuit of the welding with metal on the substrate 110 of sheet, and the kovar alloy gold is welded on substrate 110
Belong to frame 120.Specifically, substrate 110 is aluminium nitride substrate 110, and the material of kovar alloy metal frame 120 is Mo-Ni-Cu alloys,
It is welded under the conditions of vacuum high-temperature between aluminium nitride substrate 110 and kovar alloy metal frame 120, Ag70- may be used in solder
Cu28-Ti2 activated solders.The outer edge size of kovar alloy metal frame 120 is less than the size of substrate 110.
Before welding, first with the face of weld of sand paper grinding aluminium nitride substrate 110, make, by mortgage surfacing, then to use wine
Seminal plasma is washed, and with ultrasonic cleaning about 15min in acetone soln is put into, removes oil stain for being soldered surface etc..Ag70-Cu28-
Ti2 activated solders first remove the oxide layer on surface before use, then place into and ultrasonic cleaning is carried out in acetone soln, finally
It is better than 1.0 X 10 in vacuum degree-3It is welded to connect in the vacuum drying oven of Pa.
In this embodiment, welding temperature 1150K, heating rate are 10 DEG C/min, are distinguished in 1000K and 1150K
Keep the temperature 10min.
Step 2 welds conductive layer on the kovar alloy metal frame 120, and the material of conductive layer is selected from metal, conducting
Close object and be mixed with any one of high molecular material of conductive materials, conductive layer can be single conductive layer or plurality of conductive layers and
The conductive layer that insulating layer is alternatively formed can not only be used for cloth circuits by conductive layer, can also be used to reflect LED chip hair
The light of injection becomes reflecting layer.
LED chip is fixed on the conductive layer by step 3 by welding in the conductive layer upper surface.
Step 4, above the LED chip, glass substrate 200 is installed, and is covered with protective cover in glass substrate periphery,
So that LED lamp bead encapsulation is completed.
Specifically, glass substrate 200 and multiple pixels of the glass substrate 200 are vertically distributed in, each pixel includes
Multiple sub-pixel microcavitys.In the present embodiment, each pixel includes red sub-pixel microcavity 201, green sub-pixels microcavity 202 and indigo plant
203 3 sub-pixel microcavitys of sub-pixels microcavity.Each sub-pixel microcavity is semicylinder shape, is semicircle on section,
In this way, the distance that the light that light is excited is undergone in microcavity is all consistent, generated resonance spectrum is also consistent, therefore from each
A angle, which is seen, does not have misalignment.Sub-pixel microcavity is set in the glass substrate, from glass substrate 200 up successively
Opaque anode layer 210 is laminated（Such as Ag）, barrier layer 220（Such as Ag20）, hole transmission layer 230（NPB）, luminescent layer 240
（Alg3）, electron transfer layer 250（Al/LiF）And semitransparent cathode layer 260（Such as Ag）.Opaque anode layer 210 is is set to glass
Arc-shaped on glass substrate, other layers are the fan layer stacked gradually, and both ends are located in glass substrate 200, and each layer has identical
Curvature.When making, the shape of each tunic is made using gray level mask plate.
Step 5, by the way of laser cutting, LED lamp bead from the substrate of sheet is cut down, is divided into single
LED lamp bead.
Beneficial effects of the present invention are：1st, the kovar alloy metal frame purpose smaller than substrate is in order to which structure is convenient for batch
Change, after the completion of entire encapsulation, take the mode of laser cutting, many lamp beads are cut down from the big substrate of sheet,
The place that position, that is, aluminium nitride of cutting goes out greatly than that can cut down metal frame；
2nd, by more than encapsulating structure, LED rapid heat dissipations, resistance to UV irradiations, high temperature resistant, color inhibition can be made；
3rd, enable the path of light that light is excited consistent, all no color differnece or aberration very little in terms of all angles；
4th, cloth circuits can be not only used for by conductive layer, can also be used to the light that reflection LED chip is launched becomes anti-
Penetrate layer；
5th, by the way that using concaveconvex structure, protective cover is realized effectively and simply the roughening on LED packaging bodies surface, so as to carry
The luminous efficiency of high efficiency LED is risen.
In the description of the present invention, it is to be understood that term " interior ", " top ", " middle part ", " side ", " on " etc. fingers
The orientation or position relationship shown is based on orientation shown in the drawings or position relationship, is for only for ease of the description present invention and simplifies
Description rather than instruction imply that signified unit or element must have specific orientation, with specific azimuth configuration and behaviour
Make, therefore be not considered as limiting the invention.
In the present invention unless specifically defined or limited otherwise, the terms such as term " installation ", " connection ", " fixation " should
It is interpreted broadly, for example, it may be being fixedly connected or being detachably connected or integral；Can be mechanical connection,
It can be that electrical connection can be directly connected, can also be indirectly connected by intermediary, can be the company inside two elements
Logical or two elements interaction relationship, unless otherwise restricted clearly.For the ordinary skill in the art, may be used
To understand the concrete meaning of above-mentioned term in the present invention as the case may be.
Embodiment described above only expresses the several embodiments of the present invention, and description is more specific and detailed, but simultaneously
Cannot the limitation to the scope of the claims of the present invention therefore be interpreted as.It should be pointed out that for those of ordinary skill in the art
For, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to the guarantor of the present invention
Protect range.Therefore, the protection domain of patent of the present invention should be determined by the appended claims.
Claims (10)
1. a kind of LED encapsulation structure, including package main body, which is characterized in that the package main body includes：
Substrate；
The surface is equipped with kovar alloy metal frame, and the outer edge size of the kovar alloy metal frame is less than the substrate
Size；
The kovar alloy metal frame is quadrangle, and the kovar alloy metal frame is equipped with conductive layer, is set on the conductive layer
There is die bond region；
The die bond region is used to install LED chip；
Glass substrate is installed on the die bond region, including glass substrate and is vertically distributed in the multiple of the glass substrate
Pixel, each pixel include multiple sub-pixel microcavitys, and the glass substrate periphery is covered with protective cover, the protection cover outer surface
For concaveconvex structure；And
Edge filter and diffuser are further included in the package main body, the diffuser reflects for receiving from the edge filter
Light.
2. LED encapsulation structure as described in claim 1, which is characterized in that the substrate is the aluminium nitride with metallic circuit
Substrate.
3. LED encapsulation structure as described in claim 1, which is characterized in that the material of the kovar alloy metal frame is Mo-
Ni-Cu alloys, and the kovar alloy metal frame is welded to connect with the substrate.
4. LED encapsulation structure as described in claim 1, which is characterized in that the LED chip connects with die bond region welding
It connects.
5. LED encapsulation structure as described in claim 1, which is characterized in that the material of the conductive layer is selected from metal, conducting
It closes object and is mixed with any one of high molecular material of conductive materials, the conductive layer is：
Single conductive layer or
The conductive layer that plurality of conductive layers and insulating layer are alternatively formed.
6. LED encapsulation structure as described in claim 1, which is characterized in that the concaveconvex structure be micro-structure, the micro-structure
The order of magnitude be nanoscale.
7. LED encapsulation structure as described in claim 1, which is characterized in that the sub-pixel microcavity is set to the glass lined
On bottom, and opaque anode layer, hole transmission layer, luminescent layer, electron transfer layer and half are up sequentially laminated with from glass substrate
Transparent cathode, every layer of top surface far from the glass substrate have identical curvature.
8. a kind of LED encapsulation method, which is characterized in that include the following steps：
Step 1, circuit of the welding with metal on the substrate of sheet, and the kovar alloy metal is welded on the substrate
Frame；
Step 2 welds conductive layer on the kovar alloy metal frame；
LED chip is fixed on the conductive layer by step 3 by welding in the conductive layer upper surface；
Step 4, above the LED chip, glass substrate is installed, and is covered with protective cover in the glass substrate periphery, is made
LED lamp bead encapsulation is obtained to complete；
Step 5, by the way of laser cutting, LED lamp bead from the substrate of sheet is cut down, is divided into single LED
Lamp bead.
9. LED encapsulation method as claimed in claim 8, which is characterized in that the substrate is aluminium nitride substrate, described to cut down conjunction
The material of golden metal frame is Mo-Ni-Cu alloys, is welded under the conditions of vacuum high-temperature between the aluminium nitride substrate and kovar alloy
It connects, Ag70-Cu28-Ti2 activated solders may be used in solder.
10. LED encapsulation method as claimed in claim 8, which is characterized in that the outer edge size of the kovar alloy metal frame
Less than the size of the substrate.
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