CN106848043A - The method for packing and LED component of a kind of LED component - Google Patents
The method for packing and LED component of a kind of LED component Download PDFInfo
- Publication number
- CN106848043A CN106848043A CN201710191155.1A CN201710191155A CN106848043A CN 106848043 A CN106848043 A CN 106848043A CN 201710191155 A CN201710191155 A CN 201710191155A CN 106848043 A CN106848043 A CN 106848043A
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- Prior art keywords
- led
- metal
- led component
- silver
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 238000012856 packing Methods 0.000 title claims abstract description 28
- 238000000034 method Methods 0.000 title claims abstract description 22
- 239000000758 substrate Substances 0.000 claims abstract description 30
- 238000003466 welding Methods 0.000 claims abstract description 24
- 239000000919 ceramic Substances 0.000 claims abstract description 18
- 230000005496 eutectics Effects 0.000 claims abstract description 15
- 229910052751 metal Inorganic materials 0.000 claims description 46
- 239000002184 metal Substances 0.000 claims description 46
- 238000007789 sealing Methods 0.000 claims description 18
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 14
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 14
- 239000010931 gold Substances 0.000 claims description 14
- 239000011135 tin Substances 0.000 claims description 14
- 229910052718 tin Inorganic materials 0.000 claims description 14
- 229910052737 gold Inorganic materials 0.000 claims description 13
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 11
- 239000010949 copper Substances 0.000 claims description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 10
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 10
- 229910052802 copper Inorganic materials 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 10
- 239000004332 silver Substances 0.000 claims description 10
- 229910052709 silver Inorganic materials 0.000 claims description 9
- 229910010272 inorganic material Inorganic materials 0.000 claims description 5
- 239000011147 inorganic material Substances 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- 238000007747 plating Methods 0.000 claims description 5
- 229910001128 Sn alloy Inorganic materials 0.000 claims description 4
- QCEUXSAXTBNJGO-UHFFFAOYSA-N [Ag].[Sn] Chemical compound [Ag].[Sn] QCEUXSAXTBNJGO-UHFFFAOYSA-N 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 3
- 238000001704 evaporation Methods 0.000 claims description 3
- 230000008020 evaporation Effects 0.000 claims description 3
- 238000009434 installation Methods 0.000 claims description 3
- 229910017083 AlN Inorganic materials 0.000 claims description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 2
- 229910000640 Fe alloy Inorganic materials 0.000 claims description 2
- 229910010293 ceramic material Inorganic materials 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 claims description 2
- 239000011521 glass Substances 0.000 claims description 2
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical group [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 claims description 2
- 239000007769 metal material Substances 0.000 claims description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 238000004544 sputter deposition Methods 0.000 claims description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims 2
- 229910001316 Ag alloy Inorganic materials 0.000 claims 1
- 229910001020 Au alloy Inorganic materials 0.000 claims 1
- 229910000881 Cu alloy Inorganic materials 0.000 claims 1
- 239000010437 gem Substances 0.000 claims 1
- 229910001751 gemstone Inorganic materials 0.000 claims 1
- 229910001092 metal group alloy Inorganic materials 0.000 claims 1
- 239000000203 mixture Substances 0.000 claims 1
- 239000004575 stone Substances 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- 238000005538 encapsulation Methods 0.000 abstract description 9
- 230000004907 flux Effects 0.000 abstract description 4
- 239000004065 semiconductor Substances 0.000 abstract description 4
- 238000004806 packaging method and process Methods 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 10
- 239000003292 glue Substances 0.000 description 9
- 230000008569 process Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000007493 shaping process Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 239000006071 cream Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910052573 porcelain Inorganic materials 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The invention belongs to field of semiconductor package, it is particularly suited for the light source device encapsulation that light emitting semiconductor device (LED) and laser lighting packaging etc. are exported with luminous flux density high and short wavelength's high-energy.It is related to a kind of method for packing of LED component, the LED component is including by transparent inorganic seal cover board, metallic packing ring, ceramic substrate, LED chip and part is constituted etc. LED welding leads, being welded by transparent inorganic seal cover board, metallic packing ring and ceramic substrate eutectic and being packaged to form closed LED component.
Description
Technical field
The invention belongs to field of semiconductor package, it is particularly suited for light emitting semiconductor device (LED) and laser lighting encapsulation
The light source device encapsulation that device etc. is exported with luminous flux density high and short wavelength's high-energy, tool is originally related to a kind of LED component
Method for packing and LED component.
Background technology
LED chip is packaged using organic glue mainly in LED encapsulation fields at present, part LED is by organic gel
Water is potted in support reflection chamber, also has and organic glue is formed into variously-shaped cladding LED chip using mould-forming process.
The light that LED chip is sent is transmitted and sent by organic glue.When the light that LED chip is sent has high-energy-density,
The strand for irradiating organic glue by long-time can produce fracture, and then produce the change of color for example to turn to be yellow, glue body
The phenomenon and then generation cracking for becoming fragile, destroy the sealing property of LED package, and LED component can be caused to fail.
Especially think highly of in the ultraviolet device of low wavelength and the laser of high-energy-density and produce this phenomenon.In order to overcome this kind of mistake
Effect, has partial encapsulation device by the way of being combined without cover plate and organic glue, is coated in without cover plate using organic glue
Around, fixed to and with the support cavity of ledge structure.Although can be increased the service life using this method,
Irradiation for a long time still can make glue fail so that LED component air-tightness is bad, or even cover plate comes off.This kind has step
Ceramics bracket shaping difficulty is high, and welding effect is poor, and technology difficulty is big.Sum it up, current product is still present uses nothing
The defect and step of machine glue or the ceramic substrate of groove structure are produced into height, and the big predicament of shaping difficulty is low so as to hinder
Wavelength LED component and the LED component of luminous flux density high and promoting the use of for laser lighting device.
The content of the invention
It is an object of the invention to carry out a kind of high reliability of full-inorganic material, UV resistant irradiation, humidity and resistance to
The good LED packagings of burn into air-tightness.The LED component includes transparent sealing cover plate, metallic packing ring, substrate, LED chip
With LED welding leads, LED welding leads will be made to be connected with LED chip on LED chip installation base plate, by by transparent sealing lid
Eutectic welding is packaged to form confined space between plate and metallic packing ring, and between metallic packing ring and substrate, and makes LED
Chip is located in the confined space.
Organic material is not used by the LED light source whole process made by the method for packing so that LED light source is not encapsulated
The aging influence of internal inorganic material, the characteristics of with simple production process, low cost, long-life and high reliability.
Used as a kind of technical characteristic of the invention, the seal cover board is made up of transparent inorganic material, and around cover plate
Have a circle for and sealing ring welding metal level, its material is preferably made of sapphire, silicon, glass system inorganic material, this
Metal level is circular, quadrangle or polygonal shape, and the material of metal level is the one kind or many in gold, silver, copper, golden tin, silver-colored tin
Kind of metal is by common burning, sputtering, evaporation, plating, deposition or chemically reacts and is made, metallic layer thickness ranges 0.1um~
Between 100um.
Used as a kind of technical characteristic of the invention, sealing ring main body used by the LED component is by metals such as gold, silver, copper, iron
Alloy is formed, the metal that one or more in the surface of sealing ring carries out plating gold, silver, copper, golden tin, silver-colored tin is mixed
Layer, thickness is between 1~10um.
Used as a kind of technical characteristic of the invention, the LED component substrate is made up of ceramics, metal or graphite system material
Planar structure, the preferred aluminum oxide of ceramic material and aluminium nitride material are with one side or two-sided line layer and line layer
It is made up of conducting metal, the metal level is to mix for one or more in gold, silver, copper, golden tin, silver-colored tin, the substrate entirety
Thickness between 0.1~5mm, preferably between 0.3~1.0mm, between 0.03~1mm of metal thickness, preferably 0.05~
Between 0.5mm.
Used as a kind of technical characteristic of the invention, the LED component is chip used for LED vertical chip or LED flip chip,
And chip bottom pad metal layer is gold-tin alloy, silver-tin alloy or gold, can form gold with LED light source substrate in high temperature environments
Category eutectic connection, hot environment be vacuum environment or nitrogen environment, temperature between 150 °~450 °, preferable temperature be 285 °~
Between 415 °, the chip wavelength be 210nm~1100nm between, preferably：Ultraviolet band between 265nm~365nm and 430
The blue laser chip of~460nm.
Used as a kind of technical characteristic of the invention, the eutectic welding temperature of its seal cover board and sealing ring and ceramic substrate exists
Between 265 °~415 °, and completed in vacuum environment or nitrogen environment.
As a kind of technical characteristic of the invention, the saturating transmissivity of light of its transparent sealing cover plate>70%, refractive index is 1.2
Between~2.
Brief description of the drawings：
Technical scheme in order to illustrate more clearly the embodiments of the present invention, below will be to that will make needed for embodiment description
Accompanying drawing is briefly described.Described accompanying drawing is a part of embodiment of the invention, rather than whole embodiments, this area
Technical staff on the premise of not paying creative work, other designs and attached can also be obtained according to these accompanying drawings
Figure, belongs within embodiment of the present invention category.
Fig. 1 show the transparent inorganic seal cover board in embodiment, and it is planar structure, and 1 is transparent inorganic cover plate, and 11 are
Metal level on transparent inorganic cover plate.
Fig. 2 show the ceramic substrate front in embodiment, and 4 is ceramic substrate, and 41 are shown as the metal on ceramic substrate
Layer, the metal level be with metal sealing welding region, 43 viewing areas be ceramic substrate and LED chip welding metallic region.
Fig. 3 show the metallic packing ring in embodiment, and 2 is category sealing ring, 21 sealings formed by metallic packing ring
Region.
Fig. 4 show the sectional view of the LED component in embodiment, and 11 is institute's shape after inorganic transparent cover plate and welding metal rings
Into eutectic metal level；41 by the eutectic metal level formed after sealed eyelet and ceramic substrate welding；42 metal levels are pottery
Porcelain substrate and the metal level of external circuit connection.
Specific embodiment
The technique effect of design of the invention, concrete structure and generation is carried out clearly below with reference to embodiment and accompanying drawing
Chu, complete description, to be completely understood by the purpose of the present invention, feature and effect.Obviously, described specific embodiment is
A part of embodiment of the invention, rather than whole embodiments, based on embodiments of the invention, those skilled in the art is not
The other embodiment obtained on the premise of paying creative work, belongs to protection scope of the present invention.In the invention
Various technical characteristics, can be with combination of interactions on the premise of not conflicting conflict.
What the embodiment of the present invention was realized in：A kind of LED component of inorganic encapsulated, it is first that plane ceramic substrate is positive and negative
Two sides sputters layer of metal copper, forms metal level 41 and metal level 42；Wherein 41 metal levels can also have not according to different chips
Similar shape and circuit structure, only choose the one kind of flip-chip as embodiment, such as 43 metal level institutes in figure in the present embodiment
The flip-chip that is shown as matching symmetrical structure and the metal level shape that is formed.Formed by laser boring on the both sides of metal level 43
The via of double-sided substrate, plug fills out the metal materials such as copper slurry or silver paste and forms circuit turn-on i.e. metal level 43 and gold in via
Belong to the partially ON of layer 42.Metal level 42 designs different metal level shapes also dependent on different line constructions.By etching
Go out corresponding circuit, mainly there are two functional areas, one is chip welding region, and two is metallic packing ring welding region.Then
Gold is welded by the eutectic that the methods such as plating, evaporation, deposition or chemical reaction form golden tin, gold, silver tin or silver on layers of copper surface
Category layer.
The preferred sapphire material of inorganic transparent cover plate, metalized is carried out by the peripheral region of sapphire cover plate, is formed
11 metal levels.
Becket 2 is processed by shape, then forms two metal-plateds of end face by Treatment of Metal Surface
Layer.
The encapsulation process of the LED component in the present embodiment is：
Step one：First LED chip 3 and ceramic substrate 4 are attached, connected mode can be eutectic, tin cream welding or
Elargol bonding mode.
Step 2：Sealed eyelet 2 and ceramic substrate 4 are welded, encapsulation cavity is formed.
Step 3：The upper surface of inorganic transparent seal cover board 1 and sealed eyelet 2 is carried out into eutectic welding, encapsulation is completed
The sealing of cavity.
Or the encapsulation process for having another LED component is：
Step one：LED chip 3 and sealed eyelet 2 are placed on ceramic substrate 4 simultaneously, then carry out eutectic welding.
Step 2：The upper end of inorganic transparent seal cover board 1 and closed metal ring is welded.
Or have another assemble method：
Step one：LED chip and ceramic substrate 4 are welded.
Step 2：2 sealed eyelets and inorganic transparent cover plate are welded.
Step 3：The component that step one and step 2 are formed is welded.
The described eutectic that is welded as is welded in above step, and hot environment is vacuum environment or nitrogen environment, and temperature exists
Between 150 °~450 °, pressure can be applied to the top of each part in welding process, solder resist can be used during eutectic
Improve welding quality.
Although it should be strongly noted that the present invention is just for short wavelength's LED component and the laser device of luminous flux density high
It is set forth and is illustrated with embodiment, but encapsulating structure of the invention equally other high reliability LED components and laser device
Encapsulating structure, to solve requirement of these devices to qualities such as high leakproofness, corrosion resistance and long-lives.
The preferred embodiment invented is illustrated above, but the invention is not limited to the embodiment,
Those of ordinary skill in the art can also make many kinds of equivalent modifications or replacement on the premise of without prejudice to spirit of the invention, this
A little equivalent modifications or replacement are all contained in the application claim limited range.
Claims (10)
1. a kind of method for packing of LED component, it is characterised in that the LED component include transparent sealing cover plate, metallic packing ring,
Substrate, LED chip and LED welding leads, will be such that LED welding leads are connected with LED chip on LED chip installation base plate, pass through
By eutectic welding is packaged to form closed between transparent sealing cover plate and metallic packing ring, and between metallic packing ring and substrate
Space, and make LED chip in the confined space.
2. the method for packing of LED component as claimed in claim 1, it is characterised in that the seal cover board is by transparent inorganic
Material is constituted, and have around cover plate a circle for and metallic packing ring welding metal level, seal cover board material is preferably with blue
Jewel, silicon or glass material, the metal level is circular, quadrangle or polygonal shape, the material of metal level is gold, silver, copper,
One or more metal in golden tin, silver-colored tin is made up, metal of common burning, sputtering, evaporation, plating, deposition or chemical reaction
Layer thickness range is between 0.1um~100um.
3. the method for packing of LED component as claimed in claim 1, it is characterised in that the main body of the metallic packing ring be by
Gold, silver, copper, iron or metal alloy are formed, one or more shape in its surface carries out plating gold, silver, copper, golden tin, silver-colored tin
Into metal surface, the thickness of metal surface is between 1~10um.
4. the method for packing of LED component as claimed in claim 1, it is characterised in that the substrate is by ceramics, metal or stone
The planar structure that black system material is made, the preferred aluminum oxide of ceramic material and aluminium nitride material, with one side or two-sided line
Road floor and line layer is made up of conducting metal, the conductive metallic material is one or more in gold, silver, copper, golden tin, silver-colored tin
Mix, between 0.1~5mm, preferably between 0.3~1.0mm, the thickness of conducting metal exists the substrate integral thickness
Between 0.03~1mm, preferably between 0.05~0.5mm.
5. LED component as claimed in claim 1, method for packing characterized in that, the substrate integral thickness preferably 0.3~
Between 1.0mm, the thickness of conducting metal is preferably between 0.05~0.5mm.
6. LED component as claimed in claim 1, it is characterised in that the LED chip is LED vertical chip or LED upside-down mounting cores
Piece, and chip bottom pad metal layer is gold-tin alloy, silver-tin alloy or gold, can form metal with substrate in high temperature environments and be total to
Crystalline substance connection.
7. the method for packing of LED component as claimed in claim 6, it is characterised in that hot environment is vacuum environment or nitrogen
Environment, temperature between 150 °~450 °, preferable temperature be 285 °~415 ° between, the LED chip wavelength be 210nm~
Between 1100nm, preferably：The blue laser chip of ultraviolet band and 430~460nm between 265nm~365nm.
8. the method for packing of LED component as claimed in claim 1, it is characterised in that the seal cover board and sealing ring and close
The eutectic welding temperature of seal ring and substrate is completed between 265 °~415 ° in vacuum environment or nitrogen environment.
9. the method for packing of LED component as claimed in claim 1, it is characterised in that the light of its transparent sealing cover plate is transmitted
Rate>70%, refractive index is between 1.2~2.
10. a kind of LED component, it is characterised in that the LED component includes transparent sealing cover plate, metallic packing ring, substrate, LED core
Piece and LED welding leads, are welded by transparent sealing cover plate, metallic packing ring and ceramic substrate eutectic and are packaged to form closed
Space, on LED chip installation base plate and in confined space.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710191155.1A CN106848043A (en) | 2017-03-28 | 2017-03-28 | The method for packing and LED component of a kind of LED component |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710191155.1A CN106848043A (en) | 2017-03-28 | 2017-03-28 | The method for packing and LED component of a kind of LED component |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106848043A true CN106848043A (en) | 2017-06-13 |
Family
ID=59142449
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710191155.1A Pending CN106848043A (en) | 2017-03-28 | 2017-03-28 | The method for packing and LED component of a kind of LED component |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106848043A (en) |
Cited By (32)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108155283A (en) * | 2018-02-01 | 2018-06-12 | 赛创电气（铜陵）有限公司 | A kind of ceramic circuit-board preparation method and ceramic circuit harden structure with box dam |
| CN108269902A (en) * | 2018-01-16 | 2018-07-10 | 深圳市光脉电子有限公司 | A kind of LED encapsulation structure and its packaging method |
| CN108428779A (en) * | 2017-09-21 | 2018-08-21 | 张胜翔 | Inorganic bonding package structure of ultraviolet light emitting diode |
| CN108461613A (en) * | 2018-05-31 | 2018-08-28 | 深圳市瑞丰光电紫光技术有限公司 | A kind of UV-LED light sources and its lamps and lanterns |
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Application publication date: 20170613 |