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CN108242445B - 用于薄膜晶体管的阵列基板及其显示装置 - Google Patents

用于薄膜晶体管的阵列基板及其显示装置 Download PDF

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Publication number
CN108242445B
CN108242445B CN201711339007.6A CN201711339007A CN108242445B CN 108242445 B CN108242445 B CN 108242445B CN 201711339007 A CN201711339007 A CN 201711339007A CN 108242445 B CN108242445 B CN 108242445B
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active layer
thin film
film transistor
electrode
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CN108242445A (zh
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金昌垠
张勇均
白贞恩
金成真
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LG Display Co Ltd
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LG Display Co Ltd
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Abstract

公开了薄膜晶体管阵列基板和显示装置。薄膜晶体管阵列基板包括：基板；设置在所述基板上的栅电极；有源层，其与所述栅电极相对，具有厚度不同的第一区域和第二区域，并且至少包含半导体材料；置于所述栅电极与所述有源层之间的栅极绝缘膜；以及分别与所述有源层接触的源电极和漏电极。

Description

用于薄膜晶体管的阵列基板及其显示装置
交叉引用
本申请要求于2016年12月23日提交的第10-2016-0178302号韩国专利申请的优先权权益，其通过引用合并到本文中，如同在此充分阐述一样。
技术领域
本公开内容涉及薄膜晶体管阵列基板和包括该薄膜晶体管阵列基板的显示装置。
背景技术
近来，随着多媒体的发展，平板显示器(FDP)正变得越来越重要。因此，诸如液晶显示(LCD)装置、等离子体显示面板(PDP)、场发射显示(FED)装置、有机发光显示(OLED)装置的各种显示器被投入实际使用中。
用于驱动显示装置的方法包括无源矩阵方法和使用薄膜晶体管的有源矩阵方法。在无源矩阵方法中，阳极和阴极形成为彼此正交并且选择线来驱动，而在有源矩阵方法中，薄膜晶体管连接至各个像素电极以根据开/关切换进行驱动。
薄膜晶体管非常重要的不仅包括薄膜晶体管的基本特性比如电子迁移率和漏电流，而且包括可以保持长使用寿命的耐久性和电可靠性。具体地，薄膜晶体管的有源层可以主要由非晶硅、多晶硅或氧化物半导体形成。虽然非晶硅具有成膜工艺简单和生产成本低的优点，但是也具有电子迁移率低至0.5cm2/Vs的缺点。氧化物半导体的开/关比为约108并且具有低漏电流，但是缺点在于其电子迁移率为10cm2/Vs，低于多晶硅的电子迁移率。多晶硅具有约100cm2/Vs的高电子迁移率，但是缺点是其与氧化物半导体相比具有低的开/关比并且将其应用于大面积是昂贵的。因此，正在继续研究改善薄膜晶体管的特性比如电子迁移率、漏电流、开/关比等。
发明内容
因此，本公开内容的实施方式涉及用于薄膜晶体管的阵列基板及其显示装置，这基本上消除了由于现有技术的限制和缺点而导致的一个或更多个问题。
本公开内容的一个方面提供了薄膜晶体管阵列基板和包括其的显示装置，所述薄膜晶体管阵列基板可以通过形成具有不同沟道厚度的有源层来改善装置特性。
另外的特征和方面将在下面的描述中得以阐明，并且部分地将从描述中变得明显，或者可以通过本文提供的发明概念的实践而得知。可以通过在书面说明中具体指出的或能够从中导出的以及附图中具体指出的结构来实现和获得本发明概念的其他特征和方面。
为了实现本发明概念的这些方面或其他方面，如实施和广泛描述的，薄膜晶体管阵列基板包括：基板；设置在基板上的栅电极；有源层，该有源层与栅电极相对，具有厚度不同的第一区域和第二区域，并且至少包含半导体材料；置于栅电极与有源层之间的栅极绝缘膜；以及分别与有源层接触的源电极和漏电极。
第一区域的厚度小于第二区域的厚度。
有源层包括沟道区，并且第一区域和第二区域与沟道区完全交叠。
第一区域与选自源电极和漏电极中的任一个相邻，并且第二区域与选自源电极和漏电极中的另一个相邻。
第一区域的厚度在3nm至10nm的范围内。
第二区域的厚度为第一区域的厚度的1.5倍至3倍。
第二区域的长度为基于沟道区的长度的50％至90％。
有源层还包含多个碳同素异形体，并且碳同素异形体分散在半导体材料中。
碳同素异形体具有一维结构或二维结构。
碳同素异形体包括以下中的一种或多种：还原的石墨烯氧化物(rGO)、非氧化的石墨烯、石墨烯纳米带、碳纳米管(CNT)。
半导体材料包括以下中的一种或多种：陶瓷半导体、有机半导体、过渡金属硫族化物、和氧化物半导体。
基于100重量百分比的半导体材料，第一有源层中的碳同素异形体以0.01重量百分比至1重量百分比的量被包含。
在另一个方面中，显示装置包括：基板；设置在所述基板上的栅电极；有源层，有源层与栅电极相对，具有不同厚度的第一区域和第二区域，并且至少包含半导体材料；置于栅电极与有源层之间的栅极绝缘膜；分别与有源层接触的源电极和漏电极；设置在源电极与漏电极上的有机绝缘膜；以及设置在有机绝缘膜上的像素电极。
有源层还包含多个碳同素异形体，并且碳同素异形体分散在半导体材料中。
显示装置还包括电连接至像素电极的有机发光二极管，设置在有机发光二极管上的封装层、以及设置在封装层上的盖窗。
显示装置还包括公共电极，其被设置为与在同一平面上的或在其下部的像素电极间隔开；以及设置在公共电极上的液晶层。
应该理解，前面的一般描述以及后面的详细描述都是示例性的和解释性的，并且旨在提供对本发明概念的进一步解释。
附图说明
附图被包括以提供对本公开内容的进一步理解，并且被并入本申请中且构成本申请的一部分，在附图中，示出了本公开内容的实施方案并且与描述一起用于说明本发明的原理。在图中：
图1和图2示出了根据本公开内容的示例性实施方式的薄膜晶体管阵列基板的横截面视图。
图3至图5示出了说明根据本公开内容的示例性实施方式的有源层的平面视图。
图6至图8示出了说明根据本公开内容的示例性实施方式的薄膜晶体管阵列基板的各种结构的横截面视图。
图9示出了根据本公开内容的一个示例性实施方式的液晶显示装置的横截面视图。
图10示出了根据本公开内容的一个示例性实施方式的有机发光显示装置的横截面视图。
图11示出了说明仅仅由氧化物半导体材料制成的有源层的拉曼光谱分析结果的曲线图。
图12示出了说明其中氧化物半导体材料和碳纳米管混合的有源层的拉曼光谱分析结果的曲线图。
图13示出了说明根据比较例1、比较例2和比较3和示例制造的薄膜晶体管的电流-电压曲线的曲线图。
图14示出了说明表示图13的漏极电流的平方根值的SQRT-电压的曲线图。
具体实施方式
下文中，将参照说明性附图详细地描述本公开内容的示例性实施方式。在向附图的构成元件添加附图标记时，应注意在整个说明书中，相同的构成元件尽可能由相同的附图标记表示，即使他们显示在不同的附图中，相似的附图标记基本上表示相似的部件。此外，在说明本公开内容的示例性实施方案中，如果确定关于与本发明相关的已知功能或配置的详细描述可能使本发明的要点变得模糊，则将省略其详细描述。
在说明本发明的构成元件中，可以使用术语比如第一、第二、A、B、(a)和(b)。这些术语旨在将构成元件与其他构成元件区分开，并且构成元件的性质、顺序、序列等不受这些术语的限制。当构成元件被描述为与其他构成元件“链接”、“耦接”或“连接”时，可以理解为构成元件直接链接、耦接或连接至不同的构成元件，但是还可以理解为在各个构成元件之间链接、耦接或连接有不同的构成元件。在相同的上下文中，当构成元件被描述为形成在不同的构成元件的“上”或“下”时，应理解为包括其中构成元件直接形成在不同构成元件上的情况和其中通过将其他不同构成元件置于不同构成元件上来间接形成构成元件的情况。
下面描述的根据本公开内容的显示装置可以为有机发光显示装置、液晶显示装置、电泳显示装置等。在本公开内容中，液晶显示装置被描述作为示例性实施方式。液晶显示器由薄膜晶体管阵列基板、滤色基板和置于这两种基板之间的液晶层组成，其中像素电极和公共电极形成在薄膜晶体管上。在这种液晶显示器中，液晶由垂直或水平施加到公共电极和像素电极的电场驱动。根据本公开内容的显示装置还可用于有机发光显示装置。例如，有机发光显示装置包括连接至薄膜晶体管的第一电极和第二电极，以及设置在其间的由有机材料制成的发光层。因此，由第一电极供应的空穴和由第二电极供应的电子在发光层中结合形成为空穴-电子对的激子，并且激子通过返回到基态时产生的能量发光。下面描述的本公开内容的包含碳同素异形体的有源层可用于上述显示装置的薄膜晶体管。
下文中，将参照附图描述本公开内容的示例性实施方式。
本公开内容公开了只包含半导体材料的薄膜晶体管或者还包含碳同素异形体的薄膜晶体管，并且公开了其中形成包括具有不同厚度的区域的有源层的薄膜晶体管。使用薄膜晶体管作为显示装置的开关元件或驱动元件。
<半导体材料>
本公开内容的有源层包含半导体材料。用于本公开内容的半导体材料可为可以涂覆有溶液的陶瓷半导体、有机半导体、过渡金属硫族化物、或氧化物半导体。
陶瓷半导体利用陶瓷的电特性。由于陶瓷被束缚至某些离子或原子，所以它们不能自由移动并且因此不易带电。然而，当从外部施加电场时，由于束缚电子响应于状态的变化而重新排列，所以电子可以移动。陶瓷半导体由通过金属元素比如硅(Si)、锗(Ge)、硒(Se)、铝(Al)、钛(Ti)、锆(Zr)等与氧(O)、碳(C)、氮(N)等之间的结合制备的氧化物、碳化物和氮化物组成。典型的陶瓷半导体可包含钛酸钡(BaTiO3)。
有机半导体是具有半导体特性的有机化合物并且可包含聚合物有机半导体或低分子有机半导体。聚合物有机半导体的示例可以包括聚[(9,9-二辛基芴基-2,7-二基)-共-联噻吩](F8T2)、聚[(5,6-二氢-5-辛基-4,6-二氧-4H-噻吩并[3,4-C]吡咯-1,3-二基){4,8-双[(2-丁基辛基)氧基]苯并[1,2-b:4,5-b′]二噻吩-2,6-二基}](PBDTBOTPDO)、聚[[5-(2-乙基己基)-5,6-二氢-4,6-二氧-4H-噻吩并[3,4-c]吡咯-1,3-二基][4,8-双[(2-乙基己基)氧基]苯并[1,2-b:4,5-b′]二噻吩-2,6-二基]](PBDT-TPD)、聚[1-(6-{4,8-双[(2-乙基己基)氧基-6-甲基苯并[1,2-b:4,5-b′]二噻吩-2-基}-3-氟-4-甲基噻吩并[3,4-b]噻吩-2-基)-1-辛酮](PBDTTT-CF)、聚[N-9′-十七烷基-2,7-咔唑-交替-5,5-(4′,7′-二-2-噻吩基-2′,1′,3′-苯并噻二唑)(PCDTBT)、聚[[9-(1-辛基壬基)-9H-咔唑-2,7-二基]-2,5-噻吩二基-2,1,3-苯并噻二唑-4,7-二基-2,5-噻吩二基])、聚[2,6-(4,4-双-(2-乙基己基)-4H-环戊并[2,1-b；3,4-b′]二噻吩)-交替-4,7(2,1,3-苯并噻二唑)](PCPDTBT)、聚[2,7-(9,9-二辛基芴)-交替-4,7-双(噻吩-2-基)苯并-2,1,3-噻二唑](PFO-DBT)、聚[双(4-苯基)(2,4,6-三甲基苯基)胺](PTAA)、聚[(5,6-二氢-5-辛基-4,6-二氧-4H-噻吩并[3,4-c]吡咯-1,3-二基)[4,8-双[(2-乙基己基)氧基]苯并[1,2-b:4,5-b′]二噻吩-2,6-二基]]、聚[(9,9-二-正辛基芴基-2,7-二基)-交替-(苯并[2,1,3]噻二唑-4,8-二基)](F8BT)、聚(3-十二烷基噻吩-2,5-二基)(P3DDT)、聚(3-己基噻吩-2,5-二基)(P3HT)、聚[2-甲氧基-5-(3′,7′-二甲基辛氧基)-1,4-亚苯基亚乙烯基](MDMOPPV)、聚[2-甲氧基-5-(2-乙基己氧基)-1,4-亚苯基亚乙烯基](MEH-PPV)、聚(3-辛基噻吩-2,5-二基)(P3OT)和聚({4,8-双[(2-乙基己基)氧基]苯并[1,2-b:4,5-b′]二噻吩-2,6-二基}{3-氟-2-[(2-乙基己基)羰基]噻吩并[3,4-b]噻吩二基})(PTB7)等。
低分子有机半导体可包括，例如，6,13-双(三异丙基甲硅烷基乙炔基)并五苯(TIPS-并五苯)、6,13-双((三乙基甲硅烷基)乙炔基)并五苯(TES并五苯)、5,5′-双(7-己基-9H-芴-2-基)-2,2′-联噻吩(DH-FTTF)、2,8-二氟-5,11-双(三乙基甲硅烷基乙炔基)蒽二噻吩)(二F-TES-ADT)、5,5′-二己基-2,2′-联噻吩(DH2T)、3,3″′-二己基-2,2′:5′,2″:5″,2″′-四噻吩(DH4T)、5,5″″′-二己基-2,2′:5′,2″:5″,2″′:5″′,2″″:5″″,2″″′-六噻吩(DH6T)、2(4,4′-[4,4-双(2-乙基己基)-4H-噻咯并[3,2-b:4,5-b′]二噻吩-2,6-二基]双[7-(5′-己基-[2,2′-联噻吩]-5-基)-[1,2,5]噻二唑并[3,4-c]吡啶]、5,5′-双{[4-(7-己基噻吩-2-基)噻吩-2-基]-[1,2,5]噻二唑并[3,4-c]吡啶}-3,3′-二-2-乙基己基亚甲硅烷-2,2′-联噻吩)(DTS(PTTh2))、2,5-二-(2-乙基己基)-3,6-双-(5″-正己基-[2,2′,5′,2″]三噻吩-5-基)-吡咯并[3,4-c]吡咯-1,4-二酮(SMDPPEH)、5,11-双(三乙基甲硅烷基乙炔基)蒽二噻吩(TES-ADT)等。
如上所述的有机半导体，可以使用选自聚合物有机半导体和低分子有机半导体中的至少两种，或者可以使用相互不同的聚合物有机半导体，或者可以使用相互不同的低分子有机半导体。
过渡金属二硫族化合物是具有半导体特性的材料并且可以包含过渡金属硫化物、过渡金属硒化物、过渡金属碲化物等。作为过渡金属二硫族化合物，可以使用例如SnSe2、CdSe、ZnSe、ZnTe、MoS2、MoSe2、MoTe2、WS2、WSe2、WTe2等。
氧化物半导体是具有半导体特性的材料并且可以为包含金属例如镓(Ga)、铟(In)、锌(Zn)、锡(Sn)、硅(Si)、锆(Zr)等的氧化物。要使用的氧化物半导体的示例可包括IGZO、In2O3、ZnO、IZO、IGO等，但不限于此并且可以使用已知的材料。
<碳同素异形体>
本公开内容的有源层还包含分散在上述半导体材料中的碳同素异形体。
本公开内容中公开的碳同素异形体表示具有彼此共价键合的碳原子的多环芳香族分子。共价键合的碳原子可以形成作为重复单元的6元环，并且另外地，还可包含选自5元环和7元环中的至少一个。碳同素异形体可为单层或者其可以包括堆叠在碳同素异形体的不同层上的多个碳同素异形体层。碳同素异形体可具有一维结构或二维结构。碳同素异形体的最大厚度为约10nm，具体地约1nm至约9nm，并且更具体地约2nm至约8nm。
碳同素异形体主要可以通过四种不同的方法来制造，例如物理剥离(physicalexfoliation)、化学气相沉积、化学剥离和外延生长(epitaxial growth)。物理剥离是一种将透明胶带连接到石墨样品上，然后将其去除，从而获得从透明胶带的表面上的石墨分离的碳同素异形体片的方法。化学气相沉积是一种通过在基板的表面上用高动能吸收/分解气体或蒸气形式的碳前体以生长碳的晶体同素异形体的方法，其中旨在生长碳的晶体同素异形体，从而分离碳原子并在相应的碳原子之间建立原子键的形成。化学剥离利用石墨的氧化-还原特性，将石墨添加到硫酸和硝酸的混合物中，并且羧基化合物附在碳同素异形板的边缘。通过氯化亚砜将所得物转化成酰氯，然后再次使用十八烷基胺形成为碳同素异形体酰胺。当使用溶液比如四氢呋喃回收碳同素异形体酰胺时，发生粉碎，获得单个的碳同素异形体片。外延生长是一种通过在1,500℃的高温下加热硅碳化物(SiC)获得碳同素异形体的方法，并且由此除去硅(Si)并且通过剩余的碳获得碳同素异形体。
用于本公开内容的碳同素异形体可包含还原的石墨烯氧化物(rGO)、非氧化的石墨烯、石墨烯纳米带、碳纳米管(CNT)等。还原的石墨烯氧化物(GO)为石墨烯氧化物的还原形式，并且还原的石墨烯氧化物可以通过还原石墨烯氧化物来制备，所述石墨烯氧化物是通过向石墨中添加强酸而被氧化并化学形成小颗粒来制备的。非氧化的石墨烯是指不同于氧化还原过程，通过上述制备碳同素异形体的方法中的方法制备的碳同素异形体。石墨烯纳米带是通过切割具有纳米宽度的带状石墨烯来制备并根据其宽度具有恒定的能带隙。石墨烯纳米带可以由含有碳同素异形体的单体合成或者通过切割碳纳米管并将其扩散到平面上来合成。除了碳同素异形体的上述类型以外，已知的碳同素异形体结构比如石墨烯纳米网等可用于本公开内容的碳同素异形体。
本公开内容的碳同素异形体以薄片形式使用。碳同素异形体薄片可以通过以下步骤来制备：将分散体涂覆在基板上，其中碳同素异形体分散在溶剂中；使溶剂干燥；以及向其施加物理力。作为施加物理力的方法，碳同素异形体薄片可以通过例如球磨机、珠磨机、超声波均化器、搅拌等方法来获得。
<碳同素异形体-半导体材料混合物>
当本公开内容的有源层包含碳同素异形体和半导体材料时，碳同素异形体-半导体材料混合物可以通过使碳同素异形体与半导体材料混合来制备。
更具体地，制备碳同素异形体薄片和半导体材料。碳同素异形体薄片和半导体材料以粉末的形式制备。碳同素异形体薄片和半导体材料在将它们添加至溶剂中之后进行混合以生产碳同素异形体半导体混合物。与前述不同，本公开内容的碳同素异形体-半导体混合物可以通过使其中分散了碳同素异形体的碳同素异形体分散体混合在包含半导体材料的半导体溶液中来制备。
具体地，使用的溶剂可为选自以下中的至少一种：水；醇类，选自乙醇、甲醇、异丙醇、丁醇、2-乙基己基醇、甲氧基戊醇、丁氧基乙醇、乙氧基乙氧基乙醇、丁氧基乙氧基乙醇、甲氧基丙氧基丙醇、酯醇(texanol)、松油醇、及其组合；四氢呋喃(THF)；丙三醇、乙二醇、三乙二醇、聚乙二醇、丙二醇、二丙二醇、二己二醇或其烷基醚；甘油(glycerin)、N-甲基-2-吡咯烷酮(NMP)、2-吡咯烷酮、乙酰丙酮、1,3-二甲基咪唑啉酮、硫二甘醇、二甲基亚砜(DMSO)、N,N-二甲基乙酰胺(DMAc)、二甲基甲酰胺(DMF)、环丁砜、二乙醇胺、三乙醇胺。
为了碳同素异形体的良好分散，可以添加其他添加剂或者可以向其照射超声波。当用超声波照射碳同素异形体-半导体混合物时，优选间隔数次照射超声波。例如，混合碳同素异形体和半导体材料并用超声波破碎机用强超声波(约250W)照射约30分钟。通过重复这个过程，可以制备具有良好分散的碳同素异形体的碳同素异形体-半导体混合物。
基于100重量百分比(wt％)的半导体材料固体，用于本公开内容的碳同素异形体-半导体混合物的碳同素异形体可以以0.01wt％至1wt％之间的量被包含。具体地，当基于100wt％的半导体材料固体，碳同素异形体的含量等于或大于0.01wt％时，可以提高电荷迁移率，而当基于100wt％的半导体材料固体，碳同素异形体的含量等于或小于1wt％时，可以表现出防止开关比降低的效果。
下文中，将描述包括使用上述材料的有源层的薄膜晶体管及其显示装置。由碳同素异形体-半导体材料混合物制成的有源层作为一个示例来描述，但是还可应用由上述材料制成的有源层。
图1和图2示出了根据本公开内容的示例性实施方式的薄膜晶体管阵列基板的横截面视图；图3至图5示出了说明根据本公开内容的示例性实施方式的有源层的平面视图；以及图6至图8示出了说明根据本公开内容的示例性实施方式的薄膜晶体管阵列基板的各种结构的横截面视图。
<薄膜晶体管阵列基板>
本公开内容中公开的薄膜晶体管阵列基板使用其中栅电极设置在有源层下的底部栅极型薄膜晶体管作为一个示例性实施方式来说明。
参照图1，栅电极120设置在基板110上。基板110由透明或不透明的玻璃、塑料或金属制成。栅电极120可由选自以下中的任一者的单层或多层形成：铜(Cu)、钼(Mo)、铝(Al)、铬(Cr)、金(Au)、钛(Ti)、镍(Ni)、钕(Nd)、钽(Ta)、和钨(W)、或其合金。栅极绝缘膜130设置在栅电极120上用于使栅电极120绝缘。栅极绝缘膜130由硅氧化物膜(SiOx)、硅氮化物膜(SiNx)或其多层形成。
有源层140设置在栅极绝缘膜130上。有源层140由上述半导体材料、碳同素异形体、或其混合物制成。本公开内容的有源层140包括具有不同厚度的第一区域142和第二区域146。第一区域142比第二区域146薄，并且第二区域146比第一区域142厚。即，有源层140中的薄区域对应第一区域142而有源层140中的厚区域对应第二区域146。
有源层140包括沟道区(CH)。沟道区(CH)是指在与栅电极120交叠的有源层140中源电极150a与漏电极150b之间的空间。有源层140的第一区域142和第二区域146对应于与沟道区(CH)完全交叠的区域。即，第一区域142没有与源电极150a(或漏电极150b)交叠并且第二区域146没有与漏电极150b(或源电极150a)交叠。在本公开内容中，显示第一区域142与源电极150a相邻，但是不限于此，第二区域146可以与源电极150a相邻。
沟道区(CH)形成在有源层140的第一区域142中。由于厚度相对较薄，所以电子浓度分布相对较窄并且有效沟道长度相对较短。因此，第一区域142可以使阈值电压(Vth)沿正方向移动。此外，当多个碳同素异形体包含在有源层140的第一区域142中时，多个碳同素异形体可以通过使载流子快速移动通过碳同素异形体来增加电子迁移率。
沟道区(CH)形成在有源层140的第二区域146中。由于厚度相对较厚，所以电子浓度分布得相对较宽并且有效沟道长度相对较长。因此，第二区域146可以增加电子迁移率并且防止阈值电压(Vth)沿负方向移动。此外，当多个碳同素异形体包含在有源层140的第二区域146中时，多个碳同素异形体可以通过使载流子快速移动穿过碳同素异形体来增加电子迁移率。
因此，本公开内容的有源层140的优点在于其包括具有较小厚度的第一区域142和具有较大厚度的第二区域146，由此增加电子迁移率并且防止阈值电压沿负方向移动。
参照图2，本公开内容的有源层140的第一区域142的厚度(FT)可在3nm至10nm的范围内。当第一区域142的厚度(FT)为3nm或更大时，沟道区(CH)可以形成为具有防止电子迁移率降低的减小的厚度，而当第一区域142的厚度(FT)为10nm或更小时，可以防止有源层140变厚。本公开内容的有源层140的第二区域146的厚度(ST)可以为第一区域142的厚度(FT)的1.5倍至3倍。当第二区域146的厚度(ST)为第一区域142的厚度(FT)的1.5倍或更高时，可以向沟道区(CH)供应载流子以增加电子迁移率，而当第二区域146的厚度(ST)为第一区域142的厚度(FT)的3倍或更小时，可以防止有源层140变厚。
同时，本公开内容的有源层140的第二区域146的长度(SL)可以在基于沟道区(CH)的长度(CHL)的50％至90％的范围内形成。当第二区域146的长度(SL)等于或大于基于沟道区(CH)的长度(CHL)的50％时，电子浓度可以通过优化沟道区(CH)中的电子浓度来增加，而当第二区域146的长度(SL)等于或小于基于沟道区(CH)的长度(CHL)的90％时，可以防止阈值电压(Vth)沿负方向移动。
因此，如图3中所示，有源层140的第二区域146的长度(SL)可以基于沟道区(CH)的长度(CHL)以至少5:5的比率形成。优选地，如图4中所示，有源层140的第二区域146的长度(SL)可以基于沟道区(CH)的长度(CHL)以至少7:3的比率形成。然而，如图5中所示，优选的是基于沟道区(CH)的长度(CHL)，有源层140的第二区域146的长度(SL)没有超过至少9:1的比率。
当本公开内容的有源层140包含半导体材料和碳同素异形体时，基于100wt％的半导体材料，有源层140在第一区域142和第二区域146中可包含量为0.01wt％至1wt％的碳同素异形体。具体地，当基于100wt％的半导体材料，碳同素异形体的含量比等于或大于0.01wt％时，可以提高有源层的电子迁移率，而当基于100重量％的半导体材料，碳同素异形体的含量比等于或小于1wt％时，可以防止晶体管的阈值电压沿负(-)方向移动。作为参考，100wt％的半导体材料意指100wt％的半导体材料固体，并且是指基于100wt％的半导体材料固体，碳同素异形体固体的wt％。
可以通过将碳同素异形体和半导体材料的上述混合物涂覆在其上形成有栅极绝缘膜130的基板110上两次以形成第一区域142和第二区域146来形成上述有源层140。用于涂覆碳同素异形体-半导体混合物的示例性方法可包括旋涂、狭缝涂覆、丝网印刷、喷墨印刷等，只要涉及涂覆溶液，可以使用任何方法。通过将碳同素异形体-半导体薄膜在250℃下加热2小时来除去溶剂。然后，可以通过光刻法使碳同素异形体-半导体薄膜图案化来制备本公开内容的有源层140。例如，可以通过形成具有预定厚度的有源层的图案作为第一涂覆并且进一步在有源层的图案上形成具有预定厚度的有源层的图案作为第二涂覆来形成包括具有不同厚度的第一区域142和第二区域146的有源层。然而，本公开内容不限于此并且具有不同厚度的有源层可以通过使用半色调掩模的单个涂覆来形成。
与有源层140的一侧接触的源电极150a和与有源层140的另一侧接触的漏电极150b设置在有源层140上。源电极150a和漏电极150b可以由单层或多层形成。当源电极150a和漏电极150b由单层形成时，它们可以由选自以下的任一者制成：钼(Mo)、铝(Al)、铬(Cr)、金(Au)、钛(Ti)、镍(Ni)、钕(Nd)、和铜(Cu)、或其合金。此外，当源电极150a和漏电极150b由多层形成时，它们可以由钼/铝-钕、钼/铝、或钛/铝的双层，或者钼/铝-钕/钼、钼/铝/钼、或钛/铝/钛的三层形成。
可以在本公开内容的有源层140的沟道区(CH)中形成薄第一区域以防止阈值电压沿负方向移动，并且可以形成厚第二区域，由此提高电子迁移率。因此，电子迁移率和阈值电压可以通过形成使沟道区(CH)具有不同厚度的有源层140来控制。
在本公开内容的上述有源层140中，当通过将碳同素异形体分散在半导体材料中向源电极150a和漏电极150b施加电压时，电子和空穴移动至有源层140的沟道。具体地，由于碳同素异形体分散在有源层140的沟道中，所以电子和空穴根据半导体材料中的半导体材料的电荷迁移率移动，并且非常快速地在设置为靠近导体的碳同素异形体中移动。当电子和空穴沿着半导体和碳同素异形体移动时，可以显著提高电子迁移率。具体地，虽然半导体材料具有电子迁移率由于散射减小的特征，该散射是电子移动期间发生的现象，但是散射很少在碳同素异形体中发生，因此可以消除电子迁移率降低的风险。
此外，由于本公开内容的有源层140包含少量的碳同素异形体，所以通过碳同素异形体之间的接触(或化学键合)几乎不形成载流子移动通过的路径。因此，可以防止由于有源层140的半导体特征的恶化引起的关断(OFF)电流的增加。
同时，本公开内容的薄膜晶体管阵列基板关于薄膜晶体管可具有各种结构。
参照图6，本公开内容的薄膜晶体管阵列基板被形成为具有底部栅极型结构，其中源电极150a和漏电极150b可以设置在有源层140与栅极绝缘膜130之间。更具体地，栅电极120设置在基板110上并且栅极绝缘膜130设置在栅电极120上。彼此间隔开的源电极150a和漏电极150b可以设置在栅极绝缘膜130上，并且有源层140可以被设置成与栅极绝缘膜130上的源电极150a和漏电极150b接触。具体地，可以布置有源层140以使得第一区域142被设置成与源电极150a相邻，而第二区域146被设置成与漏电极150b相邻。因此，使得有源层140的沟道区(CH)形成为具有不同的厚度。
此外，参照图7，由顶部栅极结构组成的本公开内容的薄膜晶体管阵列基板的特征在于栅电极120、源电极150a和漏电极150b可以设置在栅极绝缘膜130上。更具体地，有源层140设置在基板110上并且栅极绝缘膜130设置在有源层140上。彼此间隔开的源电极150a和漏电极150b可以设置在栅极绝缘膜130上并且与有源层140接触，栅电极120可以置于源电极150a与漏电极150b之间。具体地，可以布置有源层140以使得第一区域142被设置成与源电极150a相邻，而第二区域146被设置成与漏电极150b相邻。因此，使有源层140的沟道区(CH)形成为具有不同厚度。
此外，参照图8，由顶部栅极结构组成的本公开内容的薄膜晶体管阵列基板的特征在于源电极150a和漏电极150b可以设置在有源层140下面。更具体地，彼此间隔开的源电极150a和漏电极150b可以设置在基板110上并且有源层140可以被设置成在源电极150a和漏电极150b上与源电极150a和漏电极150b接触。栅极绝缘膜130可以设置在有源层140上并且栅电极120可以设置在栅极绝缘膜130上。具体地，可以布置有源层140以使得第一区域142被设置为与源电极150a相邻，而第二区域146被设置为与漏电极150b相邻。因此，使有源层140的沟道区(CH)形成为具有不同的厚度。
下文中，将参照图9和图10，对包括本公开内容的薄膜晶体管阵列基板的显示装置进行描述。下面将公开包括根据上述实施方式的薄膜晶体管阵列基板的显示装置并且将省略任何重复描述。图9示出了说明根据本公开内容的一个示例性实施方式的液晶显示装置的横截面视图，以及图10示出了说明根据本公开内容的一个示例性实施方式的有机发光显示装置的横截面视图。
<显示装置>
参照图10，有机绝缘膜160设置在源电极150a和漏电极150b上。有机绝缘膜160用于使其下面的不平整部分平面化，并且可以由有机材料例如光敏性丙烯酰、聚酰亚胺、苯并环丁烯树脂、丙烯酸酯树脂等制成。有机绝缘膜160包括露出漏电极150b的通孔165。虽然没有示出，但是由硅氧化物(SiOx)、硅氮化物(SiNx)或其多层制成的钝化膜可以设置在源电极150a和漏电极150b上。
像素电极170和公共电极180设置在有机绝缘膜160上。像素电极170通过形成在有机绝缘膜160上的通孔165连接至漏电极150b。像素电极160由透明和导电材料比如铟锡氧化物(ITO)和铟锌氧化物(IZO)形成。公共电极180由与像素电极170相同的材料制成。交替布置像素电极170和公共电极180并且在像素电极170与公共电极180之间形成水平电场。
设置与基板110相对的顶部基板190并且将液晶层(LC)置于基板110与顶部基板190之间。本公开内容的示例性实施方式已经关于其中像素电极170和公共电极180设置在同一平面上的面内切换(IPS)液晶显示器进行了描述。然而，本公开内容不限于此，而是相反的，公共电极180可以设置在像素电极170的下部或者公共电极180可以设置在顶部基板190上。
同时，参照图10，本公开内容的显示装置可以为包括有机发光二极管的有机发光显示器。更具体地，有机绝缘膜160位于源电极150a和漏电极150b上。有机绝缘膜160包括露出漏电极150b的通孔165。
像素电极170设置在有机绝缘膜160上。像素电极170通过有机绝缘膜160上的通孔165连接至漏电极150b。堤层(bank layer)175设置在像素电极170上。堤层175可以是通过暴露像素电极170的一部分来限定像素的像素限定层。有机层190设置在堤层175和露出的像素电极170上。有机层190包括通过电子与空穴之间的结合发光的发光层，并且可以包括空穴注入层、空穴传输层、电子传输层、或电子注入层。对置电极(opposing electrode)200设置在其上形成有机层190的基板110上。对置电极200是阴极并且可由具有低功函数的镁(Mg)、钙(Ca)、铝(Al)、银(Ag)或其合金制成。因此，形成包括像素电极170、有机层190和对置电极200的有机发光二极管(OLED)。
封装层210设置在其上形成有机发光二极管(OLED)的基板110上。封装层210封装基板110，其包括下面的有机发光二极管(OLED)，并且可以由无机膜、有机膜或其多层结构组成。盖窗220设置在封装层210上并且形成有机发光显示装置。
在下文中，将描述关于根据本公开内容的实施方式的包括第一区域和第二区域的有源层的实验示例。下面的实验示例仅是本公开内容的示例性实施方式，并且本公开内容不限于此。
实验例1：有源层混合物的分析
仅仅由氧化物半导体材料组成的有源层和其中氧化物半导体材料和碳同素异形体混合的有源层的组成经历拉曼光谱分析。具体地，使用碳纳米管作为碳同素异形体并且基于100wt％的半导体材料固体混合0.1wt％的石墨烯。图11示出了说明仅仅由氧化物半导体材料制成的有源层的拉曼光谱分析结果的曲线图，以及图12示出了说明其中氧化物半导体材料和碳纳米管混合的有源层的拉曼光谱分析结果的曲线图。
参照图11，仅仅由氧化物半导体材料组成的有源层的拉曼光谱分析结果仅仅显示出其中形成有源层的基板的峰。
同时，参照图12，其中氧化物半导体材料和碳纳米管混合的有源层的拉曼光谱分析结果显示出除了基板峰以外的碳同素异形体存在的G峰、D峰、2D峰。通常地，当碳纳米管存在于薄膜中时，G峰、D峰和2D峰出现在拉曼光谱分析中。具体地，G峰的位置为1580cm-1，D峰的位置为1340cm-1并且2D峰的位置为2700cm-1。G峰，被称作石墨的'g'之后的G峰，是在石墨材料中常见的峰，以及D峰是由于晶体中的缺陷的峰，是与石墨烯或碳纳米管的缺陷相关的峰。由于当具有1350cm-1的能量的声子的非弹性散射连续出现两次时出现2D峰，所以2D峰在2700cm-1周围出现。在D峰中，随着碳纳米管中存在的缺陷的数量增加，峰值增加。因此，基于G峰、D峰和2D峰的出现的拉曼光谱分析结果确定作为碳同素异形体的碳纳米管的存在。
实验例2：薄膜晶体管的评价
<比较例1>
涂覆纯IGZO并且在450℃下热处理1小时以形成涂层，随后图案化以形成单层有源层并且制备底部栅极型薄膜晶体管。
<比较例2>
在与上述比较例1中相同的工艺条件下制备薄膜晶体管，不同之处在于通过使IGZO溶液与基于100wt％的IGZO固体的0.1wt％的碳纳米管粉末混合来形成厚度为20nm的有源层。
<比较例3>
在与上述比较例2中相同的工艺条件下制备薄膜晶体管，不同之处在于形成厚度为5nm的有源层。
<示例>
在与上述比较例1中相同的工艺条件下制造薄膜晶体管，不同之处在于通过使IGZO溶液与基于100wt％的IGZO固体的0.1wt％的碳纳米管粉末混合来形成薄有源层，并且通过在薄有源层上进行额外涂覆来形成具有部分较厚部分的有源层。具体地，在图1的结构中，第一区域形成为具有5nm的厚度，并且第二区域形成为具有10nm的厚度。
测量根据比较例1、比较例2和比较例3以及示例制造的薄膜晶体管的电流-电压曲线并且示出在图13中，以及测量表示图13的漏极电流的平方根值的SQRT-电压并且示出在图14中。阈值电压和电子迁移率示出在下表1中。
[表1]
比较例1 比较例2 比较例3 示例
阈值电压(Vth，V) -0.5 -9 6.1 2.2
电子迁移率(cm<sup>2</sup>/Vs) 3.3 10.4 0.86 8.4
参照图13、图14和表1，在其中设置仅仅由IGZO制成的单层有源层的比较例1中，阈值电压示出为-0.5V，并且电子迁移率示出为3.3cm2/Vs。在其中设置混合有IGZO和碳纳米管的单层有源层的比较例2中，阈值电压示出为-9V并且电子迁移率示出为10.4cm2/Vs。在其中设置混合有IGZO和碳纳米管的厚度为5nm的单层有源层的比较例3中，阈值电压示出为6.1V并且电子迁移率示出为0.86cm2/Vs。同时，在其中设置混合有IGZO和碳纳米管并且包括厚度为5nm的第一区域和厚度为10nm的第二区域的有源层的示例中，阈值电压示出为2.2V并且电子迁移率示出为8.4cm2/Vs。
根据上述结果，确定了在其中设置仅仅由IGZO制成的单层有源层的比较例1中，阈值电压特征良好，但是电子迁移率较低。在其中设置混合有IGZO和碳纳米管的单层有源层的比较例2中，电子迁移率较高，但是阈值电压沿负(-)方向移动从而特性较低。此外，在其中设置混合有IGZO和碳纳米管、厚度为5nm的单层有源层的比较例3中，电子迁移率非常低并且阈值电压沿正(+)方向显著移动。同时，在其中设置混合有IGZO和碳纳米管并且包括厚度为5nm的第一区域和厚度为10nm的第二区域的有源层的示例中，电子迁移率示出为比比较例1和比较例3的电子迁移率更加快速并且阈值电压与比较例和比较例3相比示出为优异。
因此，本公开内容可以通过形成薄第一区域来防止阈值电压沿负方向移动并且通过形成厚第二区域来提高电子迁移率。因此，电子迁移率和阈值电压可以通过形成使得沟道区具有不同厚度的有源层来控制。
对于本领域技术人员而言明显的是，可以在不脱离本公开内容的技术思想或范围的情况下对本公开内容的薄膜晶体管阵列基板及其显示装置进行各种修改和变型。因此，本公开内容旨在覆盖本公开内容的修改和变型，只要它们落入所附权利要求及其等同物的范围内。

Claims (13)

1.一种薄膜晶体管阵列基板，包括：
基板；
设置在所述基板上的栅电极；
有源层，所述有源层与所述栅电极相对，具有厚度不同的第一区域和第二区域，并且包含至少半导体材料和多个碳同素异形体，所述多个碳同素异形体分散在所述至少半导体材料中；
置于所述栅电极与所述有源层之间的栅极绝缘膜；以及
分别与所述有源层接触的源电极和漏电极，
其中，基于100重量百分比的所述至少半导体材料，所述有源层中的所述多个碳同素异形体以0.01重量百分比至1重量百分比的量被包含。
2.根据权利要求1所述的薄膜晶体管阵列基板，其中所述第一区域的厚度小于所述第二区域的厚度。
3.根据权利要求1所述的薄膜晶体管阵列基板，其中：
所述有源层包括沟道区；以及
所述第一区域和所述第二区域与所述沟道区完全交叠。
4.根据权利要求1所述的薄膜晶体管阵列基板，其中：
所述第一区域与选自所述源电极和所述漏电极中的任一个相邻；并且
所述第二区域与选自所述源电极和所述漏电极中的另一个相邻。
5.根据权利要求1所述的薄膜晶体管阵列基板，其中所述第一区域的厚度在3nm至10nm的范围内。
6.根据权利要求5所述的薄膜晶体管阵列基板，其中所述第二区域的厚度为所述第一区域的厚度的1.5倍至3倍。
7.根据权利要求3所述的薄膜晶体管阵列基板，其中所述第二区域的长度为基于所述沟道区的长度的50％至90％。
8.根据权利要求1所述的薄膜晶体管阵列基板，其中所述碳同素异形体具有一维结构或二维结构。
9.根据权利要求1所述的薄膜晶体管阵列基板，其中所述碳同素异形体包括以下中的一种或多种：还原的石墨烯氧化物rGO、非氧化的石墨烯、石墨烯纳米带、以及碳纳米管CNT。
10.根据权利要求1所述的薄膜晶体管阵列基板，其中所述至少半导体材料包括以下中的一种或多种：陶瓷半导体、有机半导体、过渡金属硫族化物、以及氧化物半导体。
11.一种显示装置，包括：
基板；
设置在所述基板上的栅电极；
有源层，所述有源层与所述栅电极相对，具有不同厚度的第一区域和第二区域，并且包含至少半导体材料和多个碳同素异形体，所述多个碳同素异形体分散在所述至少半导体材料中；
置于所述栅电极与所述有源层之间的栅极绝缘膜；
分别与所述有源层接触的源电极和漏电极；
设置在所述源电极与所述漏电极之间的有机绝缘膜；以及
设置在所述有机绝缘膜上的像素电极，
其中，基于100重量百分比的所述至少半导体材料，所述有源层中的所述多个碳同素异形体以0.01重量百分比至1重量百分比的量被包含。
12.根据权利要求11所述的显示装置，还包括：
电连接至所述像素电极的有机发光二极管；
设置在所述有机发光二极管上的封装层；以及
设置在所述封装层上的盖窗。
13.根据权利要求11所述的显示装置，还包括：
公共电极，被设置为与在同一平面上的或在其下部的像素电极间隔开；以及
设置在所述公共电极上的液晶层。
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Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5973358A (en) * 1997-07-01 1999-10-26 Citizen Watch Co., Ltd. SOI device having a channel with variable thickness
JP2003518828A (ja) * 1999-12-20 2003-06-10 ノキア コーポレイション 通信ネットワークにおけるコール・ドロップバックの実行方法及びその装置
JP2005259884A (ja) * 2004-03-10 2005-09-22 Seiko Epson Corp 半導体装置およびその製造方法
JP2006237587A (ja) * 2005-01-28 2006-09-07 Semiconductor Energy Lab Co Ltd 半導体装置、電子機器、及び半導体装置の作製方法
JP2007188923A (ja) * 2006-01-11 2007-07-26 Toray Ind Inc 電界効果型トランジスタおよびそれを用いた画像表示装置
US20140103332A1 (en) * 2012-10-16 2014-04-17 Samsung Display Co., Ltd. Thin film transistor display panel
US20160334918A1 (en) * 2014-12-29 2016-11-17 Boe Technology Group Co., Ltd Thin-film transistor, array substrate and fabrication method, and display device

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2358081B (en) 2000-01-07 2004-02-18 Seiko Epson Corp A thin-film transistor and a method for maufacturing thereof
TWI244571B (en) * 2002-01-30 2005-12-01 Sanyo Electric Co Semiconductor display device
JP2005093874A (ja) 2003-09-19 2005-04-07 Seiko Epson Corp 半導体装置および半導体装置の製造方法
US8164089B2 (en) 2009-10-08 2012-04-24 Xerox Corporation Electronic device
KR101281463B1 (ko) 2010-07-06 2013-07-03 엘지디스플레이 주식회사 박막 트랜지스터 기판 및 그를 이용한 액정표시장치
KR101535619B1 (ko) 2013-10-04 2015-07-09 포항공과대학교 산학협력단 알킬화 그래핀 옥사이드 조성물 및 그를 포함하는 전계효과 트랜지스터형 가스 센서
KR102194824B1 (ko) * 2014-03-17 2020-12-24 삼성디스플레이 주식회사 디스플레이 장치
KR102326152B1 (ko) * 2014-08-14 2021-11-16 삼성디스플레이 주식회사 표시장치

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5973358A (en) * 1997-07-01 1999-10-26 Citizen Watch Co., Ltd. SOI device having a channel with variable thickness
JP2003518828A (ja) * 1999-12-20 2003-06-10 ノキア コーポレイション 通信ネットワークにおけるコール・ドロップバックの実行方法及びその装置
JP2005259884A (ja) * 2004-03-10 2005-09-22 Seiko Epson Corp 半導体装置およびその製造方法
JP2006237587A (ja) * 2005-01-28 2006-09-07 Semiconductor Energy Lab Co Ltd 半導体装置、電子機器、及び半導体装置の作製方法
JP2007188923A (ja) * 2006-01-11 2007-07-26 Toray Ind Inc 電界効果型トランジスタおよびそれを用いた画像表示装置
US20140103332A1 (en) * 2012-10-16 2014-04-17 Samsung Display Co., Ltd. Thin film transistor display panel
US20160334918A1 (en) * 2014-12-29 2016-11-17 Boe Technology Group Co., Ltd Thin-film transistor, array substrate and fabrication method, and display device

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