CN107732001B - Pressure sensor based on Wheatstone bridge structure and manufacturing method thereof - Google Patents
Pressure sensor based on Wheatstone bridge structure and manufacturing method thereof Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
- 229910052751 metal Inorganic materials 0.000 claims abstract description 44
- 239000002184 metal Substances 0.000 claims abstract description 44
- 229910002601 GaN Inorganic materials 0.000 claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 230000004888 barrier function Effects 0.000 claims abstract description 20
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims description 48
- 229920002120 photoresistant polymer Polymers 0.000 claims description 33
- 239000000463 material Substances 0.000 claims description 32
- 238000005530 etching Methods 0.000 claims description 29
- 238000001259 photo etching Methods 0.000 claims description 19
- 238000000151 deposition Methods 0.000 claims description 12
- 239000011248 coating agent Substances 0.000 claims description 10
- 238000000576 coating method Methods 0.000 claims description 10
- 238000001883 metal evaporation Methods 0.000 claims description 10
- 238000000137 annealing Methods 0.000 claims description 8
- 150000001875 compounds Chemical class 0.000 claims description 8
- 230000008569 process Effects 0.000 claims description 8
- 238000003486 chemical etching Methods 0.000 claims description 7
- 238000005566 electron beam evaporation Methods 0.000 claims description 7
- 238000011161 development Methods 0.000 claims description 6
- 238000001704 evaporation Methods 0.000 claims description 6
- 238000003475 lamination Methods 0.000 claims description 5
- 238000001459 lithography Methods 0.000 claims description 5
- 238000002955 isolation Methods 0.000 claims description 4
- 238000000206 photolithography Methods 0.000 claims description 4
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims 1
- 238000002360 preparation method Methods 0.000 abstract description 3
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 31
- 239000010408 film Substances 0.000 description 7
- 239000010931 gold Substances 0.000 description 7
- 239000007789 gas Substances 0.000 description 5
- 229910052737 gold Inorganic materials 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 4
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- 239000002356 single layer Substances 0.000 description 4
- 238000010894 electron beam technology Methods 0.000 description 3
- 229910002704 AlGaN Inorganic materials 0.000 description 2
- 229910015844 BCl3 Inorganic materials 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
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- 230000004044 response Effects 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 230000002269 spontaneous effect Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 230000005533 two-dimensional electron gas Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000001017 electron-beam sputter deposition Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
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- 238000012545 processing Methods 0.000 description 1
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- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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- H10N30/00—Piezoelectric or electrostrictive devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/30—Piezoelectric or electrostrictive devices with mechanical input and electrical output, e.g. functioning as generators or sensors
- H10N30/302—Sensors
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
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Abstract
The invention discloses a pressure sensor based on a Wheatstone bridge structure and a manufacturing method thereof, relating to the technical field of semiconductor pressure sensors; comprises a bonding wafer, a bonding medium, a substrate, a buffer layer, a barrier layer, a metal wire, a barrier layer, a cavity and an ohmic electrode, wherein the buffer layer 5 is made of gallium nitride, and the barrier layer 6 is made of InxAlyGa1‑x‑yN; the stability of the resistor is ensured, the preparation method is simple, the product manufacturing precision is improved, and the resistor can be used in a high-temperature environment.
Description
Technical Field
The invention relates to the technical field of semiconductor pressure sensors.
Background
The pressure sensor is a transducer which can convert pressure signals into electric signals which can be intuitively acquired, and is widely applied to various aspects of life. At present, the semiconductor pressure sensor is mainly based on Si materials and adopts a silicon cup type film structure. The temperature characteristics of the Si material are poor, and the resistance formed by the diffusion process has changed characteristics at a higher temperature, and the isolation between the PN junction used for isolating the resistance and the substrate also deteriorates. Typically, Si-based pressure sensors can only operate in environments below 120 ℃. In addition, the four Si diffusion resistors with the same resistance have high process requirements, and the process precision and uniformity are difficult to guarantee.
Disclosure of Invention
The invention aims to solve the technical problem of the prior art, and provides a pressure sensor based on a Wheatstone bridge structure and a manufacturing method thereof.
In order to solve the technical problems, the technical scheme adopted by the invention is as follows: the device comprises a bonding wafer, a bonding medium, a substrate, a buffer layer, a metal wire, a barrier layer, a cavity and an ohmic electrode, and is characterized in that: the buffer layer is made of gallium nitride, and the barrier layer is made of InxAlyGa1-x-yAn N-membered compound.
A method of manufacturing a wheatstone bridge based pressure sensor, comprising: providing a wafer material structure, carrying out mesa photoetching, developing, carrying out mesa etching, carrying out ohmic electrode photoetching on a device, carrying out electrode metal evaporation, carrying out high-temperature annealing, carrying out metal wire photoetching, carrying out metal evaporation, carrying out back cavity photoetching, carrying out back cavity etching, depositing a bonding medium, and carrying out wafer bonding to obtain a pressure sensor; a wafer material structure is provided that includes a substrate, a buffer layer on the substrate, and a barrier layer on the buffer layer.
Preferably, the mesa etching method comprises the following steps: mesa isolation is performed on the active region and the rest part of the passive region of the barrier layer by physical and chemical etching, and gas is selected to be Cl2/BCl3And (4) mixing the gases.
Preferably, the method for photoetching the ohmic electrode of the device comprises the following steps: and uniformly coating photoresist on the surface of the wafer after the mesa etching, exposing an ohmic electrode area of the device, and developing to obtain unexposed photoresist, wherein the photoresist-free area is the ohmic electrode area.
Preferably, the method for evaporating the electrode metal comprises the following steps: and (3) sequentially evaporating metal on the surface of the wafer by adopting an electron beam evaporation method in the ohmic electrode area to obtain a metal lamination, namely the ohmic electrode.
Preferably, the metal wire photoetching and metal evaporation method comprises the following steps: uniformly coating photoresist on the surface of the wafer, and exposing the metal wire area of the device by using an exposure machine; developing the photoresist; and after the development is finished, evaporating metal as a device metal wire by adopting a magnetron sputtering or electron beam evaporation method, and stripping to obtain the metal wire.
Preferably, the back cavity photolithography method comprises: and uniformly coating photoresist on the back of the wafer, exposing an etching area of the cavity on the back of the device, and developing to obtain unexposed photoresist, wherein the middle area without the photoresist is the cavity to be etched.
Preferably, the method for etching the back cavity comprises the following steps: and etching the back cavity by using an unexposed photoresist part obtained in back cavity photoetching as an etching mask and adopting a physical and chemical etching method.
Preferably, the method for depositing the bonding medium comprises the following steps: and depositing a layer of metal on the surface of the etched back cavity as a wafer bonding medium, and simultaneously depositing the same metal layer on the surface of a wafer substrate with a flat surface.
Preferably, the method for obtaining the pressure sensor by wafer bonding comprises the following steps: and bonding the wafer and the wafer substrate with the bonding medium deposited by a wafer bonding technology, so that a cavity with constant pressure is formed between the back cavity and the substrate.
Adopt the produced beneficial effect of above-mentioned technical scheme to lie in: according to the invention, gallium nitride is used as a buffer layer, the width of a GaN forbidden band is 3.4eV which is 3 times that of a Si material, the wide forbidden band determines the good high-temperature characteristic of the material, and reports prove that a GaN material device can work at 600 ℃ without failure. In addition, the GaN material also has the advantages of high electron concentration, high electron mobility, strong radiation resistance and the like, so that the pressure sensor based on the GaN material can work in extremely complex environments. Spontaneous polarization of GaN material systems and piezoelectric polarization effects form a high concentration of two-dimensional electron gas (2DEG) at the material interface, whose resistance value is extremely sensitive to pressure response. Based on the GaN-based thin film pressure sensor structure adopting the traditional Wheatstone bridge structure, due to the good characteristics of materials, the sensor can work in an extremely severe environment, pressure signal sensing is realized, the stability of the resistor is ensured, the preparation method is simple, and the product manufacturing precision is improved.
Compared with the traditional Si-based film pressure sensor, the invention does not need impurity diffusion, can obtain the resistor with corresponding resistance value by controlling the size of the active area, and the back process is compatible with the traditional MEMS process, so that the prepared sensor can work in extreme environment without failure.
Drawings
FIG. 1 is a schematic structural view of the present invention;
FIG. 2 is a schematic sectional view taken along the line A-A of FIG. 1;
FIG. 3 is a schematic illustration of the wafer material structure of the present invention;
FIG. 4 is a schematic illustration of the mesa lithography, development step of the present invention;
FIG. 5 is a schematic diagram of a mesa etching step of the present invention;
FIG. 6 is a schematic illustration of a photolithographic step for ohmic electrodes of the device of the present invention;
FIG. 7 is a schematic illustration of the electrode metal evaporation step of the present invention;
FIG. 8 is a schematic illustration of a metal wire lithography, metal evaporation step of the present invention;
FIG. 9 is a schematic illustration of a backside cavity photolithography step of the present invention;
FIG. 10 is a schematic view of a backside cavity etch step of the present invention;
FIG. 11 is a schematic illustration of a bonding medium deposition step of the present invention;
fig. 12 is a schematic diagram of a wafer bonding step of the present invention.
In the figure: 1. a GaN device; 2. a cavity film; 3. a cavity 4, a substrate; 5. a buffer layer; 6. a barrier layer; 7. unexposed photoresist; 8. an ohmic electrode; 9. a metal wire; 10. a bonding medium; 11. and bonding the wafer.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and specific embodiments.
Referring to fig. 2, an embodiment of a wheatstone bridge based pressure sensor and a method for manufacturing the same according to the present invention includes a bonded wafer, a bonding medium, a substrate, a buffer layer, a metal wire, a barrier layer, a cavity, and an ohmic electrode, wherein the buffer layer is made of gan and the barrier layer is made of InxAlyGa1-x-yN-complex compound, and thus a bridge resistor is obtained.
Fig. 1 includes metal lines 9, a cavity film 2, and a GAN device 1.
Gallium nitride is used as a buffer layer, the width of a GaN forbidden band is 3.4eV which is 3 times that of a Si material, the wide forbidden band determines the good high-temperature characteristic of the material, and reports prove that a GaN material device can work at 600 ℃ without failure. In addition, the GaN material also has the advantages of high electron concentration, high electron mobility, strong radiation resistance and the like, so that the pressure sensor based on the GaN material can work in extremely complex environments. Spontaneous polarization of GaN material systems and piezoelectric polarization effects form a high concentration of two-dimensional electron gas (2DEG) at the material interface, whose resistance value is extremely sensitive to pressure response. Based on the GaN-based thin film pressure sensor structure adopting the traditional Wheatstone bridge structure, due to the good characteristics of materials, the sensor can work in an extremely severe environment, pressure signal sensing is realized, the stability of the resistor is ensured, the preparation method is simple, and the product manufacturing precision is improved.
The material of the barrier layer is InxAlyGa1-x-yAn N-membered compound; the buffer layer is made of GaN, and comprises InAlGaN quaternary compounds with different component concentrations, InAlN, AlGaN and InGaN ternary compounds with different component concentrations, AlN, InN and the like. Substrate materials include, but are not limited to, sapphire, SiC, Si, and the like.
A method of manufacturing a wheatstone bridge based pressure sensor, comprising: providing a wafer material structure, carrying out mesa photoetching, developing, carrying out mesa etching, carrying out ohmic electrode photoetching on a device, carrying out electrode metal evaporation, carrying out high-temperature annealing, carrying out metal wire photoetching, carrying out metal evaporation, carrying out back cavity photoetching, carrying out back cavity etching, depositing a bonding medium, and carrying out wafer bonding to obtain a pressure sensor; the wafer material structure comprises a substrate, a buffer layer on the substrate and a barrier layer on the buffer layer, wherein the buffer layer is made of gallium nitride.
Compared with the traditional Si-based film pressure sensor, the invention does not need impurity diffusion, can obtain the resistor with corresponding resistance value by controlling the size of the active area, and the back process is compatible with the traditional MEMS process, so that the prepared sensor can work in extreme environment without failure.
As shown in fig. 3, a wafer material structure is provided: providing InxAlyGa1-x-yN/GaN material wafer, substrate 4 material can be selected and not limited to sapphire, SiC, Si, GaN, etc.; the GaN buffer layer 5 and the barrier layer 6 are In with a certain thickness and component concentrationxAlyGa1-x-yN, including but not limited to InAlGaN quaternary compounds with different component concentrations, InAlN, AlGaN, InGaN ternary compounds with different component concentrations, AlN, InN and the like.
As shown in fig. 4, mesa lithography, development: carrying out organic and inorganic cleaning on the wafer, carrying out mesa photoetching after the mark manufacturing is finished, uniformly coating photoresist on the surface of the wafer, and selecting a single layer or multiple layers according to the requirement; exposing the source and drain of the device by using a contact exposure machine or an electron beam exposure machine; selecting a developing solution according to the photoresist for developing; in fig. 5, the unexposed photoresist 7 left after development is on the barrier layer, and the area covered under the unexposed photoresist 7 is the mesa.
As shown in fig. 5, the mesa etching method includes: mesa isolation is performed on the active region and the rest part of the passive region of the barrier layer by physical and chemical etching, and gas is selected to be Cl2/BCl3The gases are mixed and the unexposed photoresist 7 is removed.
As shown in fig. 6, the method for photoetching the ohmic electrode of the device is as follows: uniformly coating photoresist on the surface of the wafer after the mesa etching, and selecting a single layer or multiple layers according to the requirement; and exposing the ohmic electrode area of the device by using a contact type exposure machine or an electron beam exposure machine, and developing to obtain the unexposed photoresist 7, wherein the photoresist-free area is the ohmic electrode area.
As shown in fig. 7, the method for evaporating the electrode metal is as follows: sequentially evaporating metal with a certain thickness on the surface of the wafer by adopting an electron beam evaporation method in the ohmic electrode area to obtain a metal lamination, and obtaining an ohmic electrode 8 after stripping is finished; the metal stack can be selected from the group consisting of, but not limited to, Ti/Al/Ni/Au, Si/Ti/Al/Ni/Au, Ti/Al/Pt/Au, etc.
High-temperature annealing: and carrying out rapid high-temperature annealing on the wafer in the N2 atmosphere by using rapid annealing equipment, and selecting different annealing temperatures and annealing times according to different structures of the metal lamination to realize ohmic contact of the electrode.
As shown in fig. 8, the metal wire lithography and metal evaporation method includes: uniformly coating photoresist on the surface of the wafer, and selecting a single layer or multiple layers according to requirements; exposing the metal wire area of the device by using a contact type exposure machine or an electron beam exposure machine; selecting a developing solution according to the photoresist to develop the photoresist; after the development is finished, a magnetron sputtering or electron beam evaporation method is adopted to evaporate metal with a certain thickness to be used as a device metal lead 9, such as Ti/Au, Pt/Au, Ni/Au and the like; and stripping the photoresist to further strip the metal wire 9.
As shown in fig. 9, the back cavity photolithography method includes: and uniformly coating photoresist on the back of the wafer, exposing an etching area of the cavity on the back of the device by adopting a double-sided contact type exposure machine, selecting corresponding developing solution for developing, and developing to obtain unexposed photoresist 7, wherein the middle area without the photoresist is the cavity to be etched.
As shown in fig. 10, the method for etching the back cavity includes: etching the back cavity by using an unexposed photoresist part obtained in back cavity photoetching as an etching mask by adopting a physical and chemical etching method, and selecting corresponding etching gas and etching power according to different substrate materials; and determining different etching depths according to different sensitivity requirements, and removing the photoresist after etching.
As shown in fig. 11, the method of deposition of the bonding medium is: depositing a layer of metal on the etched back cavity surface as a wafer bonding medium 10, wherein the metal can be single-layer gold or multi-layer composite metal lamination, and the obtaining mode can be electron beam evaporation, sputtering or electroplating and the like; and simultaneously depositing the same metal layer on the surface of a wafer substrate with a smooth surface.
As shown in fig. 12, a method for bonding a wafer to obtain a pressure sensor includes: and bonding the wafer and the substrate on which the bonding medium is deposited by a wafer bonding technology, so that a cavity with constant pressure is formed between the back cavity and the substrate.
Through the steps, the manufacturing of the GaN film pressure sensor is completed. When pressure signal testing is carried out, the GaN film is used as a pressure sensing end, the two opposite-angle electrodes are respectively used as an input end and an output end, and the pressure signal sensing can be realized by measuring the voltage values of the output ends under different pressure conditions. The structure can reduce the process processing difficulty of the pressure sensor to a certain degree and realize the sensing of pressure signals under extreme conditions.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and improvements made within the spirit and principle of the present invention are intended to be included within the scope of the present invention.
Claims (10)
1. A pressure sensor based on a Wheatstone bridge structure comprises a bonded wafer 11, a bonding medium 10, a substrate 4, a buffer layer 5, a metal wire 9, a barrier layer 6, a cavity 3 and an ohmic electrode 8, and is characterized in that: the buffer layer 5 is made of gallium nitride; the barrier layer material is InxAlyGa1-x-yN multi-component compound.
2. The method of claim 1, further comprising: providing a wafer material structure, carrying out mesa photoetching, developing, carrying out mesa etching, carrying out ohmic electrode photoetching on a device, carrying out electrode metal evaporation, carrying out high-temperature annealing, carrying out metal wire photoetching, carrying out metal evaporation, carrying out back cavity photoetching, carrying out back cavity etching, depositing a bonding medium, and carrying out wafer bonding to obtain a pressure sensor; the method for etching the table top comprises the following steps: the active area of the barrier layer 6 and the rest passive area are isolated mesa by physical and chemical etching, and the wafer material structure is provided and comprises a substrate 4, a buffer layer 5 on the substrate and a barrier layer 6 on the buffer layer 5.
3. The method of claim 2, wherein the gas for mesa isolation of the active region and the rest of the passive region of the barrier layer 6 by physical-chemical etching is selected from a mixture of Cl2/BCl 3.
4. The method of claim 2, wherein the ohmic electrode of the device is fabricated by photolithography: and uniformly coating photoresist on the surface of the wafer after the mesa etching, exposing an ohmic electrode area of the device, and developing to obtain unexposed photoresist 7, wherein the photoresist-free area is the ohmic electrode area.
5. The method of claim 2, wherein the electrode metal is evaporated by a method comprising: and (3) sequentially evaporating metal on the surface of the wafer by adopting an electron beam evaporation method in the ohmic electrode area to obtain a metal lamination, namely the ohmic electrode 8.
6. The method of claim 2, wherein the metal wire is etched and evaporated by the following steps: uniformly coating photoresist on the surface of the wafer, and exposing the metal wire area of the device by using an exposure machine; developing the photoresist; after the development is finished, a magnetron sputtering or electron beam evaporation method is adopted to evaporate metal to be used as the metal conducting wire 9 of the device, and the metal conducting wire 9 is obtained after stripping.
7. The method of claim 2, wherein the backside cavity lithography comprises: and uniformly coating photoresist on the back of the wafer, exposing an etching area of the cavity on the back of the device, and developing to obtain unexposed photoresist, wherein the middle area without the photoresist is the cavity to be etched.
8. The method for manufacturing a wheatstone bridge based pressure sensor as claimed in claim 2, wherein the back cavity etching method comprises: and etching the back cavity by using an unexposed photoresist part obtained in back cavity photoetching as an etching mask and adopting a physical and chemical etching method.
9. The method of claim 2, wherein the bonding medium is deposited by a method comprising: and depositing a layer of metal on the surface of the etched back cavity as a wafer bonding medium, and simultaneously depositing the same metal layer on the surface of a wafer substrate with a flat surface.
10. The method as claimed in claim 2, wherein the wafer bonding process is performed by: the wafer and the wafer substrate, on which the bonding medium 10 has been deposited, are bonded together by a wafer bonding technique such that a cavity 3 with a constant pressure is formed between the back cavity and the substrate.
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| CN108598253B (en) * | 2018-02-28 | 2021-12-24 | 中国电子科技集团公司第十三研究所 | Preparation method of Si-based GaN pressure sensor |
| CN108400235B (en) * | 2018-02-28 | 2021-06-15 | 中国电子科技集团公司第十三研究所 | Preparation method of Si-based GaN pressure sensor |
| CN108389959A (en) * | 2018-02-28 | 2018-08-10 | 中国电子科技集团公司第十三研究所 | A kind of bridge type GaN pressure sensors preparation method and device |
| CN108376735A (en) * | 2018-02-28 | 2018-08-07 | 中国电子科技集团公司第十三研究所 | A kind of bridge type GaN pressure sensors preparation method and device |
| CN108414120B (en) * | 2018-02-28 | 2021-06-15 | 中国电子科技集团公司第十三研究所 | Preparation method of Si-based GaN pressure sensor |
| CN108414121B (en) * | 2018-02-28 | 2021-06-15 | 中国电子科技集团公司第十三研究所 | GaN pressure sensor preparation method and device |
| CN108519174B (en) * | 2018-03-27 | 2020-09-08 | 中国电子科技集团公司第十三研究所 | GaN bridge type absolute pressure sensor and manufacturing method thereof |
| CN109682510B (en) * | 2018-12-07 | 2021-05-04 | 中国电子科技集团公司第十三研究所 | GaN high-temperature pressure sensor |
| CN117147023B (en) * | 2023-11-01 | 2024-02-13 | 合肥美镓传感科技有限公司 | Gallium nitride pressure sensor and manufacturing method thereof |
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| CN101520350A (en) * | 2009-03-24 | 2009-09-02 | 无锡市纳微电子有限公司 | Process for manufacturing improved high-sensitivity low pressure sensor chip |
| CN103582951A (en) * | 2011-05-17 | 2014-02-12 | Hrl实验室有限责任公司 | GaN HEMT with a back gate connected to the source |
| CN106206930A (en) * | 2016-07-15 | 2016-12-07 | 中国电子科技集团公司第十三研究所 | Pressure transducer and preparation method thereof |
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| CN101520350A (en) * | 2009-03-24 | 2009-09-02 | 无锡市纳微电子有限公司 | Process for manufacturing improved high-sensitivity low pressure sensor chip |
| CN103582951A (en) * | 2011-05-17 | 2014-02-12 | Hrl实验室有限责任公司 | GaN HEMT with a back gate connected to the source |
| CN106206930A (en) * | 2016-07-15 | 2016-12-07 | 中国电子科技集团公司第十三研究所 | Pressure transducer and preparation method thereof |
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