CN107732001A - A kind of pressure sensor and its manufacture method based on resistance bridge structure - Google Patents
A kind of pressure sensor and its manufacture method based on resistance bridge structure Download PDFInfo
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- CN107732001A CN107732001A CN201710826236.4A CN201710826236A CN107732001A CN 107732001 A CN107732001 A CN 107732001A CN 201710826236 A CN201710826236 A CN 201710826236A CN 107732001 A CN107732001 A CN 107732001A
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- 238000000034 method Methods 0.000 title claims abstract description 60
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 19
- 239000000463 material Substances 0.000 claims abstract description 40
- 229910002601 GaN Inorganic materials 0.000 claims abstract description 28
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 239000004020 conductor Substances 0.000 claims abstract description 18
- 230000004888 barrier function Effects 0.000 claims abstract description 16
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical group [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052751 metal Inorganic materials 0.000 claims description 34
- 239000002184 metal Substances 0.000 claims description 34
- 229920002120 photoresistant polymer Polymers 0.000 claims description 28
- 238000001259 photo etching Methods 0.000 claims description 23
- 238000005530 etching Methods 0.000 claims description 15
- 150000001875 compounds Chemical class 0.000 claims description 8
- 230000008020 evaporation Effects 0.000 claims description 8
- 238000001704 evaporation Methods 0.000 claims description 8
- 239000011248 coating agent Substances 0.000 claims description 6
- 238000000576 coating method Methods 0.000 claims description 6
- 238000005566 electron beam evaporation Methods 0.000 claims description 4
- 229910015844 BCl3 Inorganic materials 0.000 claims description 3
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 3
- 230000003139 buffering effect Effects 0.000 claims 1
- 238000005036 potential barrier Methods 0.000 claims 1
- 238000002360 preparation method Methods 0.000 abstract description 6
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 235000012431 wafers Nutrition 0.000 description 22
- 239000010410 layer Substances 0.000 description 19
- 238000010586 diagram Methods 0.000 description 10
- 238000005516 engineering process Methods 0.000 description 7
- 239000010931 gold Substances 0.000 description 7
- 238000000137 annealing Methods 0.000 description 5
- 229910052737 gold Inorganic materials 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 4
- 238000010894 electron beam technology Methods 0.000 description 4
- 230000010287 polarization Effects 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 238000000151 deposition Methods 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- 238000001883 metal evaporation Methods 0.000 description 3
- 229910002704 AlGaN Inorganic materials 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 230000002269 spontaneous effect Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000005533 two-dimensional electron gas Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 239000000686 essence Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/30—Piezoelectric or electrostrictive devices with mechanical input and electrical output, e.g. functioning as generators or sensors
- H10N30/302—Sensors
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
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- Manufacturing & Machinery (AREA)
- Pressure Sensors (AREA)
- Measuring Fluid Pressure (AREA)
Abstract
The invention discloses a kind of pressure sensor and its manufacture method based on resistance bridge structure, it is related to semiconductor pressure sensor technical field；It is gallium nitride including bonding wafer, bonding medium, substrate, cushion, barrier layer, plain conductor, barrier layer, cavity and Ohmic electrode, the material of cushion 5, the material of barrier layer 6 is InxAlyGa1‑x‑yN；Ensure the stability of resistance, preparation method is simple, production precision is improved, available for hot environment.
Description
Technical field
The present invention relates to semiconductor pressure sensor technical field.
Background technology
Pressure sensor is a kind of transducer for the electric signal that pressure signal can be converted into intuitively obtaining, wide
The general every aspect for being applied to life.Semiconductor pressure sensor is mainly based upon Si materials at present, using silicon cup formula film knot
Structure.And Si material temperature characteristics are poor, using diffusion technique formed resistance characteristic can change at relatively high temperatures, for every
Decline also occurs from the isolation of resistance and the PN junction of substrate.Usual Si base pressure sensors are only operable on less than 120 DEG C
In the environment of.It is also very high for technological requirement that four resistance identical Si diffusion resistances are obtained in addition, craft precision, uniformity
It is difficult to ensure that.
The content of the invention
The technical problem to be solved in the present invention is to be directed to above-mentioned the deficiencies in the prior art, there is provided one kind is based on resistance bridge
The pressure sensor and its manufacture method of structure, application environment temperature is high, ensures the stability of resistance, preparation method is simple, carries
High product makes precision.
In order to solve the above technical problems, the technical solution used in the present invention is：Including bonding wafer, bonding medium, lining
Bottom, cushion, plain conductor, barrier layer, cavity and Ohmic electrode, it is characterised in that：The cushioning layer material is gallium nitride, gesture
Barrier material layer is InxAlyGa1-x-yN multi-element compounds.
A kind of manufacture method of the pressure sensor based on resistance bridge structure, it is characterised in that including：Chip is provided
Material structure-table top photoetching, development-mesa etch-device Ohmic electrode photoetching-electrode metal evaporation-high annealing-metal are led
Lithography, evaporation of metal-back side cavity photoetching-back side cavity etching-bonding medium deposit-bonding chip obtain pressure sensing
Device；There is provided wafer material structure includes the barrier layer on the cushion and cushion on substrate, substrate.
Preferably, the method for mesa etch is：Active area and remainder by physical chemistry etching to barrier layer
Passive region carry out mesa-isolated, gas is chosen for Cl2/BCl3Mixed gas.
Preferably, the method for device Ohmic electrode photoetching is：The uniform resist coating of wafer surface after mesa etch,
Device Ohmic electrode region is exposed, unexposed photoresist is obtained after development, unglazed photoresist region is Ohmic electrode area.
Preferably, the method for electrode metal evaporation is：Method in Ohmic electrode area using electron beam evaporation, in chip
Surface evaporated metal successively, obtain metal laminated, as Ohmic electrode.
Preferably, plain conductor photoetching, the method for evaporation of metal are：In the uniform resist coating of wafer surface, using exposure
Ray machine is exposed to device metal conductor area；Photoresist is developed；Magnetron sputtering or electricity are used after the completion of development
The method of beamlet evaporation, evaporated metal are peeled off as device metal wire, obtain plain conductor.
Preferably, the method for back side cavity photoetching is：Photoresist is uniformly smeared in chip back surface, to device back side cavity
Etch areas be exposed, development obtains unexposed photoresist, and the intermediate region without photoresist is the cavity that need to etch.
Preferably, the method for back side cavity etching is：With the unexposed photoresist part obtained in the cavity photoetching of the back side
For etch mask, back side cavity is performed etching using physical chemistry lithographic method.
Preferably, the method for bonding medium deposit is：Make in the back side housing surface deposition layer of metal that etching is completed
For wafer bonding medium, while same metal level is deposited on the wafer substrate surface of a piece of surfacing.
Preferably, the method that wafer bonding obtains pressure sensor is：By the chip of deposited bonding medium and crystalline substance
Circle substrate by wafer bond techniques bonding together so that between back side cavity and substrate formed a pressure it is constant
Cavity.
It is using beneficial effect caused by above-mentioned technical proposal：The present invention is prohibited using gallium nitride as cushion, GaN
Bandwidth is 3.4eV, is 3 times of Si materials, and wide forbidden band determines the good hot properties of material, and report has proven to GaN materials
Glassware part is operable with 600 DEG C and not failed.Other GaN material also has electron concentration height, and electron mobility is high, Radiation hardness
Many advantages, such as strong, therefore, the pressure sensor based on GaN material, may operate in extremely complicated environment.GaN material system
Spontaneous polarization and piezoelectric polarization effect the two-dimensional electron gas (2DEG) of high concentration, its resistance value can be formed at material interface
It is extremely sensitive to pressure-responsive.The GaN base diaphragm pressure sensor structure of traditional resistance bridge structure is used based on this, due to
The good characteristic of material, this kind of sensor are operable with exceedingly odious environment, realize that pressure signal senses, ensure the steady of resistance
Qualitative, preparation method is simple, improves production precision.
Sensor front technique and general GaN HEMT preparation technologies, back process and existing conventional MEMS technology
Mutually compatible, compared with traditional Si base film pressure sensors, the present invention need not carry out impurity diffusion, by controlling active area
Size is that can obtain the resistance of respective resistance values, and back process is compatible with existing MEMS technology, and obtained sensor can be with work
Make in fail under extreme environment.
Brief description of the drawings
Fig. 1 is the structural representation of the present invention；
Fig. 2 is the cross-sectional view in Fig. 1 A-A directions；
Fig. 3 is the schematic diagram of wafer material structure of the present invention；
Fig. 4 is table top photoetching of the present invention, the schematic diagram of development step；
Fig. 5 is the schematic diagram of mesa etch step of the present invention；
Fig. 6 is the schematic diagram of device Ohmic electrode lithography step of the present invention；
Fig. 7 is the schematic diagram of electrode metal evaporation step of the present invention；
Fig. 8 is plain conductor photoetching of the present invention, the schematic diagram of evaporation of metal step；
Fig. 9 is the schematic diagram of cavity lithography step in the back side of the present invention；
Figure 10 is the schematic diagram of cavity etch step in the back side of the present invention；
Figure 11 is the schematic diagram of bonding medium depositing step of the present invention；
Figure 12 is the schematic diagram of wafer bonding step of the present invention.
In figure：1st, GaN device；2nd, cavity film；3rd, cavity 4, substrate；5th, cushion；6th, barrier layer；7th, unexposed light
Photoresist；8th, Ohmic electrode；9th, plain conductor；10th, bonding medium；11st, it is bonded wafer.
Embodiment
The present invention is further detailed explanation with reference to the accompanying drawings and detailed description.
As shown in Fig. 2 one for the present invention a kind of pressure sensor and its manufacture method based on resistance bridge structure
Individual embodiment, including bonding wafer, bonding medium, substrate, cushion, plain conductor, barrier layer, cavity and Ohmic electrode, institute
It is gallium nitride to state cushioning layer material, abarrier layer material InxAlyGa1-x-yN multi-element compounds, make obtain bridge resistor according to this.
Fig. 1 includes plain conductor 9, cavity film 2 and GAN devices 1.
Using gallium nitride as cushion, GaN energy gaps are 3.4eV, are 3 times of Si materials, wide forbidden band determines
The good hot properties of material, report have proven to GaN material device and are operable with 600 DEG C not fail.Other GaN material also has
Many advantages, such as electron concentration is high, and electron mobility is high, and Radiation hardness is strong, therefore, the pressure sensor based on GaN material can
To work in extremely complicated environment.The spontaneous polarization of GaN material system and piezoelectric polarization effect can at material interface shape
It is extremely sensitive to pressure-responsive into the two-dimensional electron gas (2DEG) of high concentration, its resistance value.Based on this using traditional Hui Sidun electricity
The GaN base diaphragm pressure sensor structure of bridge structure, due to the good characteristic of material, this kind of sensor is operable with exceedingly odious
Environment, realize pressure signal sense, ensure the stability of resistance, preparation method is simple, improve production precision.
Abarrier layer material is InxAlyGa1-x-yN multi-element compounds；Including being not limited in different component concentration
InAlGaN quaternary compounds, InAlN, AlGaN, InGaN ternary compound of different component concentration, and AlN, InN etc., delay
It is GaN to rush layer.Backing material includes being not limited in sapphire, SiC, Si etc..
A kind of manufacture method of the pressure sensor based on resistance bridge structure, including：Wafer material structure-platform is provided
Face photoetching, development-mesa etch-device Ohmic electrode photoetching-electrode metal evaporation-high annealing-plain conductor photoetching, metal
Evaporation-back side cavity photoetching-back side cavity etching-bonding medium deposit-bonding chip obtains pressure sensor；Chip material is provided
Expect that structure includes the barrier layer on the cushion and cushion on substrate, substrate, cushioning layer material is gallium nitride.
Sensor front technique and general GaN HEMT preparation technologies, back process and existing conventional MEMS technology
Mutually compatible, compared with traditional Si base film pressure sensors, the present invention need not carry out impurity diffusion, by controlling active area
Size is that can obtain the resistance of respective resistance values, and back process is compatible with existing MEMS technology, and obtained sensor can be with work
Make in fail under extreme environment.
As shown in Figure 3, there is provided wafer material structure：In is providedxAlyGa1-x-yN/GaN material wafers, the material of substrate 4 can be with
Selection is not limited in sapphire, SiC, Si, GaN etc.；GaN cushions 5, barrier layer 6 are certain thickness and concentration of component
InxAlyGa1-x-yN, including it is not limited in the InAlGaN quaternary compounds of different component concentration, different component concentration
InAlN, AlGaN, InGaN ternary compound, and AlN, InN etc..
As shown in figure 4, table top photoetching, development：Organic and inorganic cleaning is carried out to chip, after completing label creating, carries out platform
Face photoetching, in the uniform resist coating of wafer surface, single or multiple lift can be chosen according to demand；Using contact exposure machine, or
Person's electron beam exposure apparatus is exposed to device source leakage；Developer solution is chosen according to photoresist to be developed；In 5 in figure on barrier layer
For the unexposed photoresist 7 left after development, institute overlay area is table top to unexposed photoresist 7 below.
As shown in figure 5, the method for mesa etch is：Active area and remainder by physical chemistry etching to barrier layer
Passive region carry out mesa-isolated, gas is chosen for Cl2/BCl3Mixed gas, and remove unexposed photoresist 7.
As shown in fig. 6, the method for device Ohmic electrode photoetching is：Wafer surface after mesa etch uniformly applies photoetching
Glue, single or multiple lift can be chosen according to demand；Using contact exposure machine, or electron beam exposure apparatus is to device Ohmic electrode
Region is exposed, and unexposed photoresist 7 is obtained after development, and unglazed photoresist region is Ohmic electrode area.
As shown in fig. 7, the method for electrode metal evaporation is：Method in Ohmic electrode area using electron beam evaporation, in crystalline substance
Certain thickness metal is evaporated on piece surface successively, obtain it is metal laminated, after the completion of stripping, as Ohmic electrode 8；It is metal laminated can
Include being not limited in Ti/Al/Ni/Au, Si/Ti/Al/Ni/Au, Ti/Al/Pt/Au etc. to choose.
High annealing：Using short annealing equipment, quick high-temp annealing is carried out to chip in N2 atmosphere, folded according to metal
Layer different structure, chooses different annealing temperatures and annealing time, realizes the Ohmic contact of electrode.
As shown in figure 8, plain conductor photoetching, the method for evaporation of metal are：In the uniform resist coating of wafer surface, according to need
Single or multiple lift can be chosen by asking；Device metal conductor area is carried out using contact exposure machine, or electron beam exposure apparatus
Exposure；Developer solution is chosen according to photoresist to develop to photoresist；Steamed after the completion of development using magnetron sputtering or electron beam
The method of hair, certain thickness metal is evaporated as device metal wire 9, such as Ti/Au, Pt/Au, Ni/Au etc.；And stripper light
Photoresist, further peel off and obtain plain conductor 9.
As shown in figure 9, the method for back side cavity photoetching is：Photoresist is uniformly smeared in chip back surface, using double contact
Formula exposure machine is exposed to the etch areas of device back side cavity, is chosen corresponding developer solution and is developed, and development obtains not
Exposure photo-etching glue 7, the intermediate region without photoresist are the cavity that need to be etched.
As shown in Figure 10, the method for back side cavity etching is：With the unexposed photoresist portion obtained in the cavity photoetching of the back side
It is divided into etch mask, back side cavity is performed etching using physical chemistry lithographic method, different according to backing material chooses phase
Corresponding etching gas and etching power；Different etching depths is determined according to different sensitivity requirements, etching completion is gone
Except photoresist.
As shown in figure 11, the method for bonding medium deposit is：In the back side housing surface deposition layer of metal that etching is completed
As wafer bonding medium 10, metal can choose single layer of gold or multilayer composite metal lamination, and acquisition pattern can select electricity
Beamlet evaporation, sputtering or plating etc.；Same metal level is deposited on the wafer substrate surface of a piece of surfacing simultaneously.
As shown in figure 12, the method that wafer bonding obtains pressure sensor is：By the chip of deposited bonding medium with
Substrate by wafer bond techniques bonding together so that the constant sky of a pressure is formed between back side cavity and substrate
Chamber.
By above step, that is, complete the making of the GaN film pressure sensor of the present invention.Carrying out pressure signal survey
During examination, end is perceived using GaN film as pressure, using diagonal two electrode as input/output terminal, measures different pressures condition
The magnitude of voltage of lower output end is the sensing that pressure signal can be achieved.The technique that the structure can reduce pressure sensor to a certain degree
Difficulty of processing, realize the sensing of pressure signal under extreme condition.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all essences in the present invention
All any modification, equivalent and improvement made within refreshing and principle etc., should be included in the scope of the protection.
Claims (10)
1. a kind of pressure sensor based on resistance bridge structure, including bonding wafer 11, bonding medium 10, substrate 4, buffering
Layer 5, plain conductor 9, barrier layer 6, cavity 3 and Ohmic electrode 8, it is characterised in that：The material of cushion 5 is gallium nitride；Gesture
Barrier material layer is InxAlyGa1-x-yN multi-element compounds.
2. a kind of manufacture method of pressure sensor based on resistance bridge structure according to claim 1, its feature
It is to include：There is provided wafer material structure-table top photoetching, development-mesa etch-device Ohmic electrode photoetching-electrode metal steams
Hair-high annealing-plain conductor photoetching, evaporation of metal-back side cavity photoetching-back side cavity etching-bonding medium deposit-chip
Bonding obtains pressure sensor；There is provided wafer material structure includes the potential barrier on the cushion 5 and cushion 5 on substrate 4, substrate
Layer 6.
3. a kind of manufacture method of pressure sensor based on resistance bridge structure according to claim 2, its feature
The method for being the mesa etch is：Etched by physical chemistry to the active area of barrier layer 6 and the passive region of remainder
Mesa-isolated is carried out, gas is chosen for Cl2/BCl3Mixed gas.
4. a kind of manufacture method of pressure sensor based on resistance bridge structure according to claim 2, its feature
The method for being the device Ohmic electrode photoetching is：The uniform resist coating of wafer surface after mesa etch, to device Europe
Nurse electrode zone is exposed, and unexposed photoresist 7 is obtained after development, and unglazed photoresist region is Ohmic electrode area.
5. a kind of manufacture method of pressure sensor based on resistance bridge structure according to claim 2, its feature
It is that the method that the electrode metal evaporates is：Method in Ohmic electrode area using electron beam evaporation, in wafer surface successively
Evaporated metal, obtain metal laminated, as Ohmic electrode 8.
6. a kind of manufacture method of pressure sensor based on resistance bridge structure according to claim 2, its feature
It is that the plain conductor photoetching, the method for evaporation of metal are：In the uniform resist coating of wafer surface, using exposure machine to device
Plain conductor region is exposed；Photoresist is developed；Using magnetron sputtering or electron beam evaporation after the completion of development
Method, evaporated metal are peeled off as device metal wire 9, obtain plain conductor 9.
7. a kind of manufacture method of pressure sensor based on resistance bridge structure according to claim 2, its feature
The method for being the back side cavity photoetching is：Photoresist is uniformly smeared in chip back surface, to the etched area of device back side cavity
Domain is exposed, and development obtains unexposed photoresist, and the intermediate region without photoresist is the cavity that need to be etched.
8. a kind of manufacture method of pressure sensor based on resistance bridge structure according to claim 2, its feature
It is that the method that the back side cavity etches is：Covered using the unexposed photoresist part obtained in the cavity photoetching of the back side as etching
Film, back side cavity is performed etching using physical chemistry lithographic method.
9. a kind of manufacture method of pressure sensor based on resistance bridge structure according to claim 2, its feature
It is that the method that the bonding medium deposits is：Layer of metal is deposited as wafer bonding in the back side housing surface that etching is completed
Medium, while same metal level is deposited on the wafer substrate surface of a piece of surfacing.
10. a kind of manufacture method of pressure sensor based on resistance bridge structure according to claim 2, its feature
It is that the method that the wafer bonding obtains pressure sensor is：The chip of deposited bonding medium 10 is led to wafer substrate
Cross wafer bond techniques bonding together so that the constant cavity 3 of a pressure is formed between back side cavity and substrate.
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| CN201710826236.4A CN107732001B (en) | 2017-09-14 | 2017-09-14 | Pressure sensor based on Wheatstone bridge structure and manufacturing method thereof |
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| CN108376735A (en) * | 2018-02-28 | 2018-08-07 | 中国电子科技集团公司第十三研究所 | A kind of bridge type GaN pressure sensors preparation method and device |
| CN108389959A (en) * | 2018-02-28 | 2018-08-10 | 中国电子科技集团公司第十三研究所 | A kind of bridge type GaN pressure sensors preparation method and device |
| CN108400235A (en) * | 2018-02-28 | 2018-08-14 | 中国电子科技集团公司第十三研究所 | The preparation method of Si base GaN pressure sensors |
| CN108414120A (en) * | 2018-02-28 | 2018-08-17 | 中国电子科技集团公司第十三研究所 | The preparation method of Si base GaN pressure sensors |
| CN108414121A (en) * | 2018-02-28 | 2018-08-17 | 中国电子科技集团公司第十三研究所 | A kind of GaN pressure sensors preparation method and device |
| CN108519174A (en) * | 2018-03-27 | 2018-09-11 | 中国电子科技集团公司第十三研究所 | GaN bridge type absolute pressure pressure sensors and production method |
| CN108598253A (en) * | 2018-02-28 | 2018-09-28 | 中国电子科技集团公司第十三研究所 | The preparation method of Si base GaN pressure sensors |
| CN109682510A (en) * | 2018-12-07 | 2019-04-26 | 中国电子科技集团公司第十三研究所 | GaN high-temp pressure sensor and preparation method |
| CN117147023A (en) * | 2023-11-01 | 2023-12-01 | 合肥美镓传感科技有限公司 | Gallium nitride pressure sensor and manufacturing method thereof |
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| CN108598253A (en) * | 2018-02-28 | 2018-09-28 | 中国电子科技集团公司第十三研究所 | The preparation method of Si base GaN pressure sensors |
| CN108389959A (en) * | 2018-02-28 | 2018-08-10 | 中国电子科技集团公司第十三研究所 | A kind of bridge type GaN pressure sensors preparation method and device |
| CN108400235A (en) * | 2018-02-28 | 2018-08-14 | 中国电子科技集团公司第十三研究所 | The preparation method of Si base GaN pressure sensors |
| CN108414120A (en) * | 2018-02-28 | 2018-08-17 | 中国电子科技集团公司第十三研究所 | The preparation method of Si base GaN pressure sensors |
| CN108414121A (en) * | 2018-02-28 | 2018-08-17 | 中国电子科技集团公司第十三研究所 | A kind of GaN pressure sensors preparation method and device |
| CN108376735A (en) * | 2018-02-28 | 2018-08-07 | 中国电子科技集团公司第十三研究所 | A kind of bridge type GaN pressure sensors preparation method and device |
| CN108400235B (en) * | 2018-02-28 | 2021-06-15 | 中国电子科技集团公司第十三研究所 | Preparation method of Si-based GaN pressure sensor |
| CN108598253B (en) * | 2018-02-28 | 2021-12-24 | 中国电子科技集团公司第十三研究所 | Preparation method of Si-based GaN pressure sensor |
| CN108519174A (en) * | 2018-03-27 | 2018-09-11 | 中国电子科技集团公司第十三研究所 | GaN bridge type absolute pressure pressure sensors and production method |
| CN108519174B (en) * | 2018-03-27 | 2020-09-08 | 中国电子科技集团公司第十三研究所 | GaN bridge type absolute pressure sensor and manufacturing method thereof |
| CN109682510A (en) * | 2018-12-07 | 2019-04-26 | 中国电子科技集团公司第十三研究所 | GaN high-temp pressure sensor and preparation method |
| CN117147023A (en) * | 2023-11-01 | 2023-12-01 | 合肥美镓传感科技有限公司 | Gallium nitride pressure sensor and manufacturing method thereof |
| CN117147023B (en) * | 2023-11-01 | 2024-02-13 | 合肥美镓传感科技有限公司 | Gallium nitride pressure sensor and manufacturing method thereof |
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