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CN107731915A - 半导体器件及利用突变异质结形成金刚石p型导电沟道的方法 - Google Patents

半导体器件及利用突变异质结形成金刚石p型导电沟道的方法 Download PDF

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CN107731915A
CN107731915A CN201710948663.XA CN201710948663A CN107731915A CN 107731915 A CN107731915 A CN 107731915A CN 201710948663 A CN201710948663 A CN 201710948663A CN 107731915 A CN107731915 A CN 107731915A
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diamond
layer
raceway groove
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CN107731915B (zh
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王晶晶
冯志红
蔚翠
周闯杰
刘庆彬
何泽召
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CETC 13 Research Institute
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Abstract

本发明公开了一种半导体器件及利用突变异质结形成金刚石p型导电沟道的方法，涉及半导体器件的制作方法技术领域。所述方法包括：在衬底上形成高阻金刚石层；在所述高阻金刚石层的上表面形成具有受主特性的一层或多层异质单质或化合物，在所述金刚石与受主层的界面处形成一个异质结，在所述金刚石的一侧近结10nm‑20nm处形成二维空穴气，利用二维空穴气作为p型导电沟道。所述方法可使p型金刚石材料沟道内的载流子浓度和迁移率在0℃‑1000℃范围内保持稳定，进而实现金刚石器件在高温环境下正常工作。

Description

半导体器件及利用突变异质结形成金刚石p型导电沟道的 方法
技术领域
本发明涉及半导体器件的制作方法技术领域，尤其涉及一种半导体器件及利用突变异质结形成金刚石p型导电沟道的方法。
背景技术
金刚石作为一种宽禁带半导体材料，其拥有5.5eV的禁带宽度，高的热导率（其热导率为12Wcm-1•K-1），高的击穿场强（> 10 MV/cm），稳定的化学特性和极强的抗辐照性能，这些都使其成为制作高频、大功率、抗辐射、耐高温和电力电子器件的理想材料。而制作半导体器件的必要条件之一就是在高阻的金刚石材料上实现有效的导电沟道。现行的制作高效的p型导电沟道的方法之一就是利用表面处理在金刚石表面形成由被C-H键所覆盖的氢端基金刚石，利用C-H键与空气中近表面吸附层中的水分子和CO2分子等极性分子相互作用，通过电子转移，在近表面形成导电p型导电沟道。由于近表面提供受主的吸附层主要是由环境中的空气提供，这就使这个近表面系统受环境影响非常大，而易受破坏，尤其是高温工作时，极性分子会解吸附，从金刚石近表面逃逸出去，从而造成p型沟道失效。
在传统元素掺杂方法，一般采用硼元素进行p型掺杂，这种掺杂方式的基本物理机制为杂质电离释放多余载流子，而在低掺杂浓度下，杂质电离被强烈抑制，激活率不足1%不足，在高掺杂浓度下，引入掺杂还会导致较强的电离杂质散射，影响载流子迁移率，使载流子迁移率几乎降至0。这两种方法都使得金刚石器件的应用受到了限制。而金刚石自身的优势正是极好的热导性能、耐高温特性和耐辐照特性，当将其用于制作耐高温器件时，p沟道热稳定性差这个短板恰恰限制了金刚石器件发挥其自身优势。因此，实现稳定的沟道，是推进金刚石高温功率器件走向应用的必经之路。
发明内容
本发明所要解决的技术问题是如何提供一种可使p型金刚石材料沟道内的载流子浓度和迁移率在0℃-1000℃范围内保持稳定的金刚石p型导电沟道的方法。
为解决上述技术问题，本发明所采取的技术方案是：一种利用突变异质结形成金刚石p型导电沟道的方法，其特征在于包括如下步骤：
在衬底上形成高阻金刚石层；
将所述高阻金刚石处理为氢终端金刚石，使其上表面具有C-H键；
在所述氢终端金刚石层的上表面形成具有受主特性的一层或多层异质单质或化合物，在所述氢终端金刚石层与受主层的界面处形成一个异质结，在所述氢终端金刚石层的一侧近结10nm-20nm处形成二维空穴气，利用二维空穴气作为p型导电沟道。
进一步的技术方案在于：所述方法在形成受主特性的一层或多层异质单质或化合物之前还包括将高阻金刚石层进行抛光处理或外延生长处理，获得光滑上表面的步骤。
进一步的技术方案在于：在衬底上利用MPCVD方法生长高阻金刚石层。
进一步的技术方案在于：所述单质为硼B、氮N、氟F、锂Li、钠Na、钙Ga、镁Mg、钾K、硅Si、锗Ge、锌Zn或铁Fe。
进一步的技术方案在于：所述化合物为BxNy、GaxNy 、AlxNy、SixNy，BxNy、FexNy、GaxOy、AlxOy、SixOy、HfxOy、FexOy、BxFy、GaxFy 、AlxFy、SixFy、BxFy、AlxGayNz或SixByNz，其中x、y和z的值为化合物中相应元素原子的个数，与相应元素的化合价有关。
本发明还公开了一种半导体器件，其特征在于：包括衬底，所述衬底的上表面设有高阻金刚石层，所述高阻金刚石层的上表面形成有C-H键；所述金刚石层的上表面设有具有受主特性的一层或多层异质单质或化合物，在所述金刚石与受主层的界面处形成一个异质结，在所述金刚石的一侧近结10nm-20nm处形成二维空穴气，利用二维空穴气作为p型导电沟道。
进一步的技术方案在于：在所述高阻金刚石层与受主层之间设有外延金刚石层。
进一步的技术方案在于：所述具有受主特性的一层或多层异质单质或化合物的厚度为1nm-100μm。
进一步的技术方案在于：所述单质为硼B、氮N、氟F、锂Li、钠Na、钙Ga、镁Mg、钾K、硅Si、锗Ge、锌Zn或铁Fe。
进一步的技术方案在于：所述化合物为BxNy、GaxNy 、AlxNy、SixNy，BxNy、FexNy、GaxOy、AlxOy、SixOy、HfxOy、FexOy、BxFy、GaxFy 、AlxFy、SixFy、BxFy、AlxGayNz或SixByNz，其中x、y和z的值为化合物中相应元素原子的个数，与相应元素的化合价有关。
采用上述技术方案所产生的有益效果在于：对于本发明所述方法中这种极化掺杂而言，利用具有C-H终端的金刚石与受主层的极化作用，形成二维空穴气。掺杂是由材料本身的极化效应导致，受温度影响几可忽略，在极低温度下亦保持较稳定的掺杂效率；而杂质电离散射的消除也大大的提高了材料中的载流子迁移率。
附图说明
图1是本发明实施例一所述方法的流程图；
图2是本发明实施例一所述半导体器件的结构示意图；
图3是本发明实施例二所述方法的流程图；
图4是本发明实施例二所述半导体器件的结构示意图；
图5是本发明实施例二所述方法的流程图；
图6是本发明实施例二所述半导体器件的结构示意图；
图7是本发明实施例所述半导体器件的能带原理图：
其中：1、衬底2、高阻金刚石层3、受主层4、二维空穴气5、外延金刚石层6、金刚石与受主层的界面。
具体实施方式
下面结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明的一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
在下面的描述中阐述了很多具体细节以便于充分理解本发明，但是本发明还可以采用其他不同于在此描述的其它方式来实施，本领域技术人员可以在不违背本发明内涵的情况下做类似推广，因此本发明不受下面公开的具体实施例的限制。
实施例一
总体的，如图1所示，本发明公开了一种利用突变异质结形成金刚石p型导电沟道的方法，包括如下步骤：
S101：在衬底1上形成高阻金刚石层2；
S102：在所述高阻金刚石层2的上表面外延生长外延金刚石层5；
S103：将所述外延金刚石层5处理为氢终端金刚石，使其上表面具有C-H键；
S104：在所述氢终端金刚石层的上表面形成具有受主特性的一层或多层异质单质或化合物，在所述氢终端金刚石与受主层3的界面处形成一个异质结，在所述氢终端金刚石层的一侧近结10nm-20nm处形成二维空穴气4，利用二维空穴气4作为p型导电沟道。
与上述方法相对应的，如图2所示，本发明还公开了一种半导体器件，包括衬底1，所述衬底1的上表面设有高阻金刚石层2，所述高阻金刚石层2的上表面为光滑设置或设有外延金刚石层5，外延金刚石层5的上表面具有C-H键；在光滑的高阻金刚石层2的上表面或外延金刚石层5的上表面设有具有受主特性的一层或多层异质单质或化合物，在所述金刚石与受主层3的界面处形成一个异质结，在所述金刚石的一侧近结10nm-20nm处形成二维空穴气4，利用二维空穴气4作为p型导电沟道。
优选的，本发明所述方法中可利用现有技术中的任意一种方法获得高阻金刚石层2。优选的：在高阻金刚石层的上表面处理的方法可以为机械抛光、化学抛光等任意抛光方法；外延生长金刚石层的方法可以为物理气相沉积、化学气相沉积、溶胶凝胶、转移等任意薄膜生长方法；
优选的：任意与金刚石接触在界面处可以产生受主特性的一层或多层异质单质或化合物，单质包括：硼（B）、氮（N）、氟（F）、锂（Li）、钠（Na）钙（Ga）、镁(Mg)、钾(K)、硅（Si）、锗(Ge)锌（Zn）、铁(Fe)等可以固体形式存在的任意单质；化合物包括：BxNy、GaxNy 、AlxNy、SixNy，BxNy、FexNy氮化物、GaxOy 、AlxOy、SixOy、HfxOy、FexOy等氧化物或BxFy、GaxFy 、AlxFy、SixFy，BxFy等氟化物，以及AlxGayNz、SixByNz等三元化合物。其中x、y和z的值为化合物中相应元素原子的个数，与相应元素的化合价有关。
本发明所述方法中这种极化掺杂而言，利用具有C-H终端的金刚石与受主层的极化作用，形成二维空穴气。掺杂是由材料本身的极化效应导致，受温度影响几可忽略，在极低温度下亦保持较稳定的掺杂效率；而杂质电离散射的消除也大大的提高了材料中的载流子迁移率。图7是本发明实施例所述半导体器件的能带原理图。图7中左侧为受主层，右侧为金刚石层，为导带底，为费米能级，为价带顶。
实施例二
如图3所示，本发明实施例公开了一种利用突变异质结形成金刚石p型导电沟道的方法，包括如下步骤：
S201：在Si衬底1上利用MPCVD方法生长500μm厚的高阻金刚石2；
S202：利用机械抛光与化学抛光相结合的方法，将所述高阻金刚石2表面研磨至粗糙度1nm；
S203：处理后得到的所述金刚石置于MPCVD设备中，抽真空至10-6mbar，然后通入CH4和H2的混合气，其中CH4流量为1000mL/min，H2流量为20L/min，反应室压力100mbar，生长时间5小时，沉积500nm高质量金刚石外延膜；
S204：将步骤S203处理后得到的金刚石置于MPCVD设备中，利用氢等离子体将金刚石处理为氢终端金刚石，材料表面为C-H键；
S205：取出样品后，在原子层淀积设备中常温淀积10 nm的氮化硼BN受主层，形成金刚石-氮化硼BN异质结。
S206：取出样品后，制作电极，利用霍尔测试系统测试异质结结构的导电特性，样品为p型，载流子迁移率1000cm2/Vs。
如图4所示，本发明实施例公开了一种半导体器件，包括衬底1，衬底1为硅衬底，所述衬底1的上表面设有高阻金刚石层2，所述高阻金刚石层2的上表面设有外延金刚石层5，外延金刚石层5经过处理后使其表面具有C-H键，外延金刚石层5的上表面设有具有受主特性的一层或多层氮化硼BN（受主层3）。所述金刚石与受主层3的界面处形成一个异质结，在所述金刚石的一侧近结10nm-20nm处形成二维空穴气4，利用二维空穴气4作为p型导电沟道。
实施例三
如图5所示，本发明实施例公开了一种利用突变异质结形成金刚石p型导电沟道的方法，包括如下步骤：
S201：利用机械抛光与化学抛光相结合的方法将高阻金刚石衬底表面研磨至粗糙度1nm；
S202：处理后得到的金刚石置于MPCVD设备中，抽真空至10-6mbar，然后通入CH4和H2的混合气，其中CH4流量为1000mL/min，H2流量为20L/min，反应室压力100mbar，生长时间5小时，沉积500nm高质量金刚石外延膜；
S203：将步骤S202处理后得到的金刚石置于MPCVD设备中，利用氢等离子体将金刚石处理为氢终端金刚石，材料表面为C-H键；
S204：取出样品后，在MOCVD设备中在1000℃温度下沉积20 nm的氮化铝(AlN)受主层，形成金刚石-氮化铝（AlN）异质结。
S205：取出样品后，制作电极，利用霍尔测试系统测试异质结结构的导电特性，样品为p型，载流子迁移率2000cm2/Vs。
如图6所示，本发明实施例公开了一种半导体器件，包括衬底1，所述衬底1为高阻金刚石，所述衬底1的上表面设有外延金刚石层5，外延金刚石层5经过处理后使其表面具有C-H键，外延金刚石层5的上表面设有具有受主特性的一层或多层氮化铝AlN（受主层3）。所述金刚石与受主层3的界面处形成一个异质结，在所述金刚石的一侧近结10nm-20nm处形成二维空穴气4，利用二维空穴气4作为p型导电沟道。
本发明所述方法利用异质结界面处材料组分突变，导致极化强度和导带带阶的突变，在异质结界面处会出现大量的呈准二维分布的自由空穴，形成二维空穴气。以BN/金刚石为例，BN是一种易获得的二元固溶体，且和金刚石具有较小的晶格失配，两者可以构成异质结，利用C-H端基的金刚石与受主层的极化作用，从而在异质结界面能带弯曲处的三角形势垒中获得二维空穴气(2DHG)，二维电子气被限制在界面处很薄的一层中，并且和电离杂质散射中心在物理位置上分离，从而能够获得非常高的迁移率。

Claims (10)

1.一种利用突变异质结形成金刚石p型导电沟道的方法，其特征在于包括如下步骤：
在衬底（1）上形成高阻金刚石层（2）；
将所述高阻金刚石处理为氢终端金刚石，使其上表面具有C-H键；
在所述氢终端金刚石层的上表面形成具有受主特性的一层或多层异质单质或化合物，在所述氢终端金刚石与受主层（3）的界面处形成一个异质结，在所述氢终端金刚石层的一侧近结10nm-20nm处形成二维空穴气（4），利用二维空穴气（4）作为p型导电沟道。
2.如权利要求1所述的利用突变异质结形成金刚石p型导电沟道的方法，其特征在于：所述方法在形成受主特性的一层或多层异质单质或化合物之前还包括将高阻金刚石层进行抛光处理或外延生长处理，获得光滑上表面的步骤。
3.如权利要求1所述的利用突变异质结形成金刚石p型导电沟道的方法，其特征在于：在衬底上利用MPCVD方法生长高阻金刚石层（2）。
4.如权利要求1所述的利用突变异质结形成金刚石p型导电沟道的方法，其特征在于：所述单质为硼B、氮N、氟F、锂Li、钠Na、钙Ga、镁Mg、钾K、硅Si、锗Ge、锌Zn或铁Fe。
5.如权利要求1所述的利用突变异质结形成金刚石p型导电沟道的方法，其特征在于：所述化合物为BxNy、GaxNy 、AlxNy、SixNy，BxNy、FexNy、GaxOy 、AlxOy、SixOy、HfxOy、FexOy、BxFy、GaxFy 、AlxFy、SixFy、BxFy、AlxGayNz或SixByNz，其中x、y和z的值为化合物中相应元素原子的个数，与相应元素的化合价有关。
6.一种半导体器件，其特征在于：包括衬底（1），所述衬底（1）的上表面设有高阻金刚石层（2），所述高阻金刚石层（2）的上表面形成有C-H键；所述金刚石层的上表面设有具有受主特性的一层或多层异质单质或化合物，在所述金刚石与受主层（3）的界面处形成一个异质结，在所述金刚石的一侧近结10nm-20nm处形成二维空穴气（4），利用二维空穴气（4）作为p型导电沟道。
7.如权利要求6所述的半导体器件，其特征在于：在所述高阻金刚石层（2）与受主层（3）之间设有外延金刚石层（5）。
8.如权利要求6所述的半导体器件，其特征在于：所述具有受主特性的一层或多层异质单质或化合物的厚度为1nm-100μm。
9.如权利要求6或8所述的半导体器件，其特征在于：所述单质为硼B、氮N、氟F、锂Li、钠Na、钙Ga、镁Mg、钾K、硅Si、锗Ge、锌Zn或铁Fe。
10.如权利要求6或8所述的半导体器件，其特征在于：所述化合物为BxNy、GaxNy 、AlxNy、SixNy，BxNy、FexNy、GaxOy 、AlxOy、SixOy、HfxOy、FexOy、BxFy、GaxFy 、AlxFy、SixFy、BxFy、AlxGayNz或SixByNz，其中x、y和z的值为化合物中相应元素原子的个数，与相应元素的化合价有关。
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