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CN107611015A - A kind of preparation method of high brightness acid corrosion silicon chip - Google Patents

A kind of preparation method of high brightness acid corrosion silicon chip Download PDF

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Publication number
CN107611015A
CN107611015A CN201710816698.8A CN201710816698A CN107611015A CN 107611015 A CN107611015 A CN 107611015A CN 201710816698 A CN201710816698 A CN 201710816698A CN 107611015 A CN107611015 A CN 107611015A
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CN
China
Prior art keywords
acid
grinding
silicon chip
acid corrosion
fused alumina
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Pending
Application number
CN201710816698.8A
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Chinese (zh)
Inventor
田原
王云彪
窦连水
常耀晖
吕菲
于妍
李静坤
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CETC 46 Research Institute
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CETC 46 Research Institute
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Priority to CN201710816698.8A priority Critical patent/CN107611015A/en
Publication of CN107611015A publication Critical patent/CN107611015A/en
Pending legal-status Critical Current

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  • Mechanical Treatment Of Semiconductor (AREA)
  • ing And Chemical Polishing (AREA)

Abstract

The invention discloses a kind of preparation method of high brightness acid corrosion silicon chip.This method includes grinding technics and sour etching technique, is first ground first using the white fused alumina in coarse grain footpath, and lapping liquid mass ratio is water:White fused alumina:Grinding aid=2:1:0.2;Secondary grinding is carried out using the white fused alumina of fine grain again, lapping liquid mass ratio is water:White fused alumina:Grinding aid=2:(1.5~2):0.2;Acid corrosion liquid volume ratio is nitric acid:Hydrofluoric acid:Glacial acetic acid=5:(2‑2.5):(1‑2).Grinding uses white fused alumina particle diameter as 7.0 μm 10.0 μm first, and secondary grinding uses white fused alumina particle diameter as 3.5 μm 6.5 μm.The surface roughness of silicon chip is 150 200nm after grinding twice, and acid corrosion removal amount is 50 80 μm, and the surface roughness of silicon chip is 40 80nm after acid corrosion.This method is simple, easily operated, can effectively reduce silicon chip acid corrosion removal amount.

Description

A kind of preparation method of high brightness acid corrosion silicon chip
Technical field
The present invention relates to semi-conducting material process technology, more particularly to a kind of preparation side of high brightness acid corrosion silicon chip Method.
Background technology
As the process technology using IGBT as the novel power transistor of representative improves constantly, silicon chip is proposed higher Requirement.Due to acid corrosion silicon chip compared with caustic corrosion silicon chip with brighter and cleaner surface, lower roughness, lower surface metal The production efficiency of content and Geng Gao, is increasingly favored.Further, since reducing the needs of cost, some device manufacturers are progressively opened Begin to prepare electronic device using the relatively higher polished silicon wafer of acid corrosion piece alternative cost and epitaxial wafer, this just proposes acid corrosion piece Higher technical requirements, high brightness, high reflectance, the acid corrosion piece of low surface roughness become the requirement of acid corrosion piece. Many industrial technology personnel and scientific research personnel do a lot of work in high brightness etched sheet field, have inquired into erosion removal amount, temperature The influences of the parameter to acid corrosion piece roughness such as degree, acid solution service condition.But routinely prepare the work of high brightness acid corrosion piece Skill is, it is necessary to very big erosion removal amount(Take around 80-120 μm of removal)The brightness of requirement is can be only achieved, undoubtedly causes silicon The waste of material.How to reduce the removal amount of high brightness etched sheet acid corrosion, while ensure that the bright and clean degree of silicon chip surface turns into One the problem of needing to consider.The work that high brightness etched sheet is a system is developed, relies solely on acid corrosion procedure technology Improvement, it is difficult to effectively reduce production high brightness acid corrosion piece acid corrosion removal amount.
The content of the invention
In view of prior art situation, the production for high brightness acid corrosion silicon chip needs, and present invention offer is a kind of simply, has The system of effect, a kind of easily operated method-high brightness acid corrosion silicon chip for reducing high brightness acid etching silicon chip sour erosion removal amount Preparation Method.
The present invention adopts the technical scheme that:A kind of preparation method of high brightness acid corrosion silicon chip, it is characterised in that:The party Method includes grinding technics and sour etching technique, and wherein grinding technics is taken grinds twice, is first carried out using the white fused alumina in coarse grain footpath Grind first, lapping liquid mass ratio is water:White fused alumina:Grinding aid=2:1:0.2;Carried out again using the white fused alumina of fine grain afterwards Secondary grinding, lapping liquid mass ratio are water:White fused alumina:Grinding aid=2:(1.5~2):0.2;Carried out twice after the completion of grinding technics Acid corrosion, acid corrosion liquid volume ratio are nitric acid:Hydrofluoric acid:Glacial acetic acid=5:(2-2.5):(1-2).
For 7.0 μm -10.0 μm, secondary grinding uses white the particle diameter of the present invention for grinding the white fused alumina used first The particle diameter of corundum is 3.5 μm -6.5 μm.
Milling time first of the present invention is 800-1200s;Secondary milling time is 200-500s.
Nitric acid, hydrofluoric acid in acid corrosion liquid of the present invention, the concentration of glacial acetic acid are respectively nitric acid 63%, hydrofluoric acid 49%, glacial acetic acid 99%.
Corrosive liquid temperature of the present invention is 20-25 DEG C, etching time 70-120s.
The invention has the advantages that:Using this method, the table of abrasive sheet is effectively reduced by grinding twice Surface roughness, the surface roughness of silicon chip is 150-200nm after grinding twice, and the removal of acid corrosion is carried out to the silicon chip after grinding Measure as 50-80 μm, the surface roughness of silicon chip is 40-80nm after acid corrosion, effectively reduces postorder acid corrosion removal amount.This hair It is bright simple, easily operated.
Brief description of the drawings
Fig. 1 is the removal amount and silicon chip surface roughness that the present invention uses average grain diameter as 5 μm of white fused alumina grinding silicon chip Graph of relation;
Fig. 2 is that the present invention uses average grain diameter coarse for the acid corrosion removal amount and silicon chip surface of 5 μm of white fused alumina grinding silicon chip The graph of relation of degree.
Embodiment
The invention will be further described with reference to embodiments:
Embodiment:Silicon chip doping type, crystal orientation N<111>P-doped, resistivity are 40-50 Ω ㎝.Grinding uses first The average grain diameter of white fused alumina is 8.5 μm, and lapping liquid proportioning is:10kg white fused aluminas, 20L water, 2L grinding aids, milling time are 1000s.For 5 μm, lapping liquid proportioning is the secondary average grain diameter for grinding the white fused alumina used:16kg white fused aluminas, 20L water, 2L are helped Grinding agent, milling time 400s.Grinding pressure is 0.5psi, grinder rotating speed 10rpm twice.Acid corrosion liquid temperature degree is 21 DEG C, the acid corrosion time is 100s, and acid corrosion liquid volume ratio is:Nitric acid:Hydrofluoric acid:Glacial acetic acid=5:2:2.Nitre in acid corrosion liquid Acid, hydrofluoric acid, the concentration of glacial acetic acid are respectively nitric acid 63%, hydrofluoric acid 49%, glacial acetic acid 99%.
From figure 1 it appears that larger without the abrasive sheet roughness of fine grinding, roughness is about 320nm, secondary grinding Afterwards, the surface roughness of silicon chip gradually reduces, and grinds 200s, when removal amount is 5 μm or so, roughness is about 240nm;Grinding 400s, removal amount, which increases, reaches 9 μm or so, and roughness is reduced to 190 μm or so.But continue to increase milling time, silicon chip surface is thick Rugosity will not be reduced further, and be held in 190 μm or so.
, it is necessary to control sour etching technique, as shown in Figure 2 after obtaining compared with the abrasive sheet of low roughness.Acid corrosion removal amount Substantially linear with silicon chip surface roughness, when removal amount only has 50 μm, roughness is 68nm or so, and works as removal amount When increasing to 100 μm, silicon chip surface roughness can be with as little as 25nm.And can meet to require because roughness is less than 70nm, because This is one can consider that more than 50 μm removal amounts that can reach requirement of silicon slice corrosion.

Claims (5)

  1. A kind of 1. preparation method of high brightness acid corrosion silicon chip, it is characterised in that:This method includes grinding technics and acid corrosion work Skill, wherein grinding technics are taken grinds twice, is first ground first using the white fused alumina in coarse grain footpath, and lapping liquid mass ratio is Water:White fused alumina:Grinding aid=2:1:0.2;Secondary grinding is carried out using the white fused alumina of fine grain again afterwards, lapping liquid mass ratio is Water:White fused alumina:Grinding aid=2:(1.5~2):0.2;Acid corrosion is carried out after the completion of grinding technics twice, acid corrosion liquid volume ratio is Nitric acid:Hydrofluoric acid:Glacial acetic acid=5:(2-2.5):(1-2).
  2. A kind of 2. preparation method of high brightness acid corrosion silicon chip according to claim 1, it is characterised in that:Grinding is adopted first The particle diameter of white fused alumina is 7.0 μm -10.0 μm, and the secondary particle diameter for grinding the white fused alumina used is 3.5 μm -6.5 μm.
  3. A kind of 3. preparation method of high brightness acid corrosion silicon chip according to claim 2, it is characterised in that:When grinding first Between be 800-1200s;Secondary milling time is 200-500s.
  4. A kind of 4. preparation method of high brightness acid corrosion silicon chip according to claim 1, it is characterised in that:In acid corrosion liquid Nitric acid, hydrofluoric acid, the concentration of glacial acetic acid be respectively nitric acid 63%, hydrofluoric acid 49%, glacial acetic acid 99%.
  5. A kind of 5. preparation method of high brightness acid corrosion silicon chip according to claim 4, it is characterised in that:Corrosive liquid temperature For 20-25 DEG C, etching time 70-120s.
CN201710816698.8A 2017-09-12 2017-09-12 A kind of preparation method of high brightness acid corrosion silicon chip Pending CN107611015A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109545663A (en) * 2018-12-12 2019-03-29 中国电子科技集团公司第四十六研究所 A kind of silicon corrosion machining process of high flat degree
CN110277307A (en) * 2019-05-28 2019-09-24 天津中环领先材料技术有限公司 A kind of process preparing single side high brightness sour piece

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1109636A (en) * 1993-12-28 1995-10-04 佳能株式会社 Semiconductor substrate and process for producing same
US20020142619A1 (en) * 2001-03-30 2002-10-03 Memc Electronic Materials, Inc. Solution composition and process for etching silicon
CN1428463A (en) * 2001-12-20 2003-07-09 瓦克硅电子股份公司 Crystal seed for making monocrystalline silicon and method for making monocrystalline silicon
CN102069448A (en) * 2009-10-28 2011-05-25 硅电子股份公司 Method for producing a semiconductor wafer

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1109636A (en) * 1993-12-28 1995-10-04 佳能株式会社 Semiconductor substrate and process for producing same
US20020142619A1 (en) * 2001-03-30 2002-10-03 Memc Electronic Materials, Inc. Solution composition and process for etching silicon
CN1428463A (en) * 2001-12-20 2003-07-09 瓦克硅电子股份公司 Crystal seed for making monocrystalline silicon and method for making monocrystalline silicon
CN102069448A (en) * 2009-10-28 2011-05-25 硅电子股份公司 Method for producing a semiconductor wafer

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109545663A (en) * 2018-12-12 2019-03-29 中国电子科技集团公司第四十六研究所 A kind of silicon corrosion machining process of high flat degree
CN110277307A (en) * 2019-05-28 2019-09-24 天津中环领先材料技术有限公司 A kind of process preparing single side high brightness sour piece
CN110277307B (en) * 2019-05-28 2022-02-11 天津中环领先材料技术有限公司 Process method for preparing single-side high-brightness sour bean curd slices

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