CN104733300A - Bonded wafer thinning method - Google Patents
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- CN104733300A CN104733300A CN201310717819.5A CN201310717819A CN104733300A CN 104733300 A CN104733300 A CN 104733300A CN 201310717819 A CN201310717819 A CN 201310717819A CN 104733300 A CN104733300 A CN 104733300A
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Abstract
The invention provides a bonded wafer thinning method. Before a device wafer is thinned, the edge of the wafer is ground first through a grinding wheel to remove the arc-shaped edge. According to the method, the bonded wafer is treated through the grinding wheel before the thinning process starts, and the arc-shaped edge of the device wafer is ground off, so the situation that sharp corners are formed on the bonded wafer in the thinning process is effectively avoided, the phenomenon of edge fractures of the device wafer is eradicated, the wafer can be thinned to less than 50 microns on the premise of guaranteeing that the edge of the device wafer does not fracture so as to meet the requirements of the follow-up preparation technology, and the performance of a semiconductor device manufactured later can be guaranteed. Compared with an existing thinning technology, the method has the advantages that no pollution will happen to a thinning machine platform and the follow-up technology, equipment adopted in the method is simple and easy to operate and concise in process, the production efficiency is greatly improved, and the production cost and equipment cost are lowered.
Description
Technical field
The present invention relates to a kind of semiconductor fabrication process, particularly relate to a kind of thining method of bonding wafer.
Background technology
Along with integrated circuit requires more and more higher to the ultrathin of chip, in addition in many field of semiconductor manufacture, such as smart card (Smart Card), MEMS (micro electro mechanical system) (MEMS), LED chip, cmos image sensing chip (CIS), photovoltaic cell (photovoltaic cells), stacking crystal grain (stacked die) and multi-chip package (Multi chip package) etc. is all ultra-thin chip (chip thickness is less than 50 μm), but these ultra-thin chips can not obtain from ultra thin wafer manufacturing process, but by wafer that conventional die manufacturing process obtains, realized by reduction process.Therefore, wafer thinning process is seized of more and more consequence in integrated circuit fabrication process.
Shown in Fig. 1 a-1b, it is to the cutaway view having each step in the most frequently used wafer thinning process flow process.As shown in Figure 1a, will treat that thinned wafer 12 is fixed on process wafer 11 by techniques such as gummeds; As shown in Figure 1 b, treat thinned wafer 12 and carry out grinding and polishing.But adopting this technique by limited for size thinning for device wafer, when being thinned to below 100 μm, treating that the fringe region of thinned wafer just there will be fracture phenomena.Because wafer is generally crystal, when breaking appears in the edge of wafer, crackle can extend gradually along crystal orientation, finally may cause the fracture of whole wafer.In order to make semiconductor device have good performance, when being less than 100 μm until thinning wafer targets thickness, adopt the method for this technology then cannot realize.
In order to by wafer grinding to less target thickness, improve in above-mentioned original technique, Fig. 2 a-2c shows the cutaway view of each step in its flow process of wafer thinning process after improvement.It is relative to the improvements of above-mentioned wafer thinning process: will be fixed on after on process wafer 21 until thinned wafer 22, filling adhesive material 23 in the gap of its corner, and then treat thinned wafer 22 and carry out thinning.Although this technique avoids breaking of Waffer edge to a certain extent, the generation of this problem fundamentally can not be stopped.And, because the corner at bonding wafer is filled with organic binder bond, once Waffer edge breaks, inherently thinning board and subsequent technique are polluted.
Be in the Chinese patent application of CN200910197079 at application number, the technical scheme that a kind of wafer thinning process is relevant can also be found.Fig. 3 a-3c shows the cutaway view of each step in wafer thinning process flow process described in this technical scheme.As shown in Figure 3 a, provide and treat thinned wafer 31; As shown in Figure 3 b, treating thinned wafer 31, to carry out grinding thinning, until stop thickness; As shown in Figure 3 c, treat thinned wafer 31 by the spray nozzle 32 of wet-method etching equipment and carry out spraying corrosion thinning, until predetermined thickness thinning.By above-mentioned two step wafer thinning process, the wafer of thickness requirement can be met.But, in this technical scheme, still there is following Railway Project: 1. owing to having used wet-etching technology, will etching stopping layer be pre-set in the wafer, need the wafer using substrate high-concentration dopant thus, thus the cost of wafer is increased; 2. owing to employing wet-etching technology, this special wet etching machine bench just needing use cost higher, thus too increase equipment cost; Compared to grinding, chemical mechanical milling tech, remove the rete of same thickness, the process time needed for wet-etching technology is longer, makes production efficiency reduce thus, improves production cost.
Known in sum, all there is corresponding problem and defect in above-mentioned existing several reduction process method, therefore, needs the more efficient thining method easily of one, to solve problems of the prior art.
Summary of the invention
The shortcoming of prior art in view of the above, the object of the present invention is to provide a kind of thining method of bonding wafer, for solve in prior art adopt routine wafer reduction process to make wafer grinding to certain thickness after the problem of edge break that occurs, and the pollution to thinning board, subsequent technique adopting coated with adhesive material between bonding wafer to cause in corresponding improvement reduction process and use wet etching to carry out the thinning production efficiency that causes of second time to wafer to reduce, the problem that production cost and equipment cost increase.
For achieving the above object and other relevant objects, the invention provides a kind of thining method of bonding wafer, described method at least comprises:
1) slide glass and device wafer are provided; Described slide glass and device wafer are carried out bonding, forms bonding wafer;
2) emery wheel is used to cut or grinding the device wafer in described bonding wafer, to remove its curved edge;
3) device wafer of described removal curved edge is thinned to required size.
Alternatively, described slide glass and device wafer bonding pattern be metal bonding, the one of sticking together in bonding, anode linkage, low temperature eutectic bonding, several bonding pattern of glass paste bonding.
Alternatively, described slide glass is wafer or glass.
Step 2) in, described use emery wheel cuts or grinding device wafer, at least comprises the following steps:
A) bonding wafer is by vacuum suction at chuck surface, rotate, and device wafer is positioned at above slide glass with certain speed;
B) emery wheel is vertically fixed on driving shaft, rotates with certain speed;
C) adjust emery wheel position, the cutting of setting emery wheel or the polishing width of grinding device Waffer edge, emery wheel carries out cutting until remove its curved edge along the device wafer edge of the polishing width set from top to bottom para-linkage wafer; Or adjustment emery wheel position, the grinding depth of setting emery wheel grinding device Waffer edge, emery wheel carries out grinding until remove its curved edge along the device wafer edge of the grinding depth set para-linkage wafer from outside to inside.
Alternatively, the required polishing width of the emery wheel grinding device Waffer edge of setting is less than or equal to 5mm, and more preferably, the scope of required polishing width is between 1mm to 5mm.
Alternatively, emery wheel by device wafer to slide glass grinding, until be milled to the contact-making surface edge of device wafer and slide glass.
Alternatively, the cutting using the device wafer of emery wheel para-linkage wafer to carry out or grinding are by once cutting or method for grinding or repeatedly cutting or method for grinding realize.
Alternatively, the device wafer of grinding and polishing method to described removal curved edge is adopted to carry out thinning.
Alternatively, carry out thinning size be less than or equal to 50 μm to the device wafer of described removal curved edge, more preferably, thinning size range is between 5 μm to 50 μm.
As mentioned above, the thining method of bonding wafer of the present invention, there is following beneficial effect: before thinning process, in the present invention, use emery wheel para-linkage wafer to process, grind off the edge of device wafer arc, this just effectively prevent in bonding wafer thinning process and occurs wedge angle, and then stopped the generation of device wafer edge break problem, can ensure under the prerequisite that device wafer edge does not break, be thinned to less than 50 μm, to meet the needs of follow-up preparation technology, ensure the performance with latter made semiconductor device.Meanwhile, compared with existing reduction process, the present invention can not cause any pollution to thinning board and subsequent technique, and the equipment used is simple, is easy to operation, and operation is succinct, substantially increases production efficiency, reduces production cost and equipment cost.
Accompanying drawing explanation
Fig. 1 a-1b is shown as the structural representation of each step in a kind of wafer thinning process flow process in prior art.
Fig. 2 a-2c is shown as the structural representation of each step in another kind of wafer thinning process flow process in prior art.
Fig. 3 a-3c is shown as the structural representation of each step in another wafer thinning process flow process in prior art.
Fig. 4 is shown as the flow chart of the thining method of bonding wafer of the present invention.
Fig. 5 a-5d is shown as the structural representation of thining method in each step of bonding wafer of the present invention.
Element numbers explanation
11,21 process wafers
12,22,31 thinned wafer is treated
23 binder materials
32 spray nozzles
41 slide glasses
42 device wafers
411 slide glasses and Device wafer contact face
Slide glass and Device wafer contact face in 421 another cases
43 emery wheels
D
1device wafer edge is to the width at bonding wafer contact-making surface edge
D
2the size that slide glass is ground
Embodiment
Below by way of specific instantiation, embodiments of the present invention are described, those skilled in the art the content disclosed by this specification can understand other advantages of the present invention and effect easily.The present invention can also be implemented or be applied by embodiments different in addition, and the every details in this specification also can based on different viewpoints and application, carries out various modification or change not deviating under spirit of the present invention.
Refer to Fig. 4 to Fig. 5 d.It should be noted that, the diagram provided in the present embodiment only illustrates basic conception of the present invention in a schematic way, though only show the assembly relevant with the present invention in graphic but not component count, shape and size when implementing according to reality is drawn, it is actual when implementing, and the kenel of each assembly, quantity and ratio can be a kind of change arbitrarily, and its assembly layout kenel also may be more complicated.
As shown in Fig. 4 to Fig. 5 d, the invention provides the thining method of bonding wafer, described method at least comprises:
1) slide glass 41 and device wafer 42 are provided; Described slide glass 41 and device wafer 42 are carried out bonding, forms bonding wafer;
2) emery wheel 43 is used to cut or grinding described device wafer 42, to remove its curved edge;
3) device wafer 42 of described removal curved edge is thinned to required size.
Concrete, in step 1), refer to S1 step and Fig. 5 a of Fig. 4, a slide glass 41 and device wafer 42 are provided; Described slide glass 41 and device wafer 42 are carried out bonding, forms bonding wafer.In the present embodiment, described device wafer is positioned at above described slide glass 41, as everyone knows, existing device wafer and slide edge are arc, (namely edge thickness is less than interior thickness, thus forms arc at edge), a contact-making surface 411 can be formed after described slide glass 41 and device wafer 42 bonding, because slide glass 41 and device wafer 42 are all that edge thickness is less than interior thickness, so the described slide glass 41 at this contact-making surface edge and device wafer 42 form slit, this slit cross section is roughly " V " shape.
In the present embodiment, device wafer 42 can be any one in following material: stacked silicon, silicon-on-insulator, germanium on insulator SiClx on silicon, insulator, stacked SiGe etc. on germanium on insulator and insulator.Although not shown in Fig. 5 a, device wafer 42 continues usually form MEMS and/or cmos device etc.Wherein MEMS can be the device architecture or complete device do not prepared, and cmos device is such as transistor (such as, NMOS and/or PMOS) etc.In addition, device wafer 42 can also comprise the circuit relevant to transistor, such as interconnection layer and interlayer dielectric layer etc.
In the present embodiment, described slide glass 41 for carrying device wafer 42, to prevent from damaging due to the thinner thickness of device wafer 42 in the follow-up technical process such as thinning.Slide glass 41 can be any wafer or glass.The material of slide glass 41 can be at least one in following mentioned material: stacked SiGe, germanium on insulator SiClx and germanium on insulator etc. on stacked silicon, insulator on glass, silicon, silicon-on-insulator, insulator.Slide glass 41 can be identical with the material of device wafer 42, also can be different.Although the slide glass 41 shown in Fig. 5 a has identical size with device wafer 42, slide glass 41 and device wafer 42 also can be of different sizes.When slide glass 41 is different with device wafer 42 size, preferably, the size (diameter) of device wafer 42 is less than the size (diameter) of slide glass 41.Such as shown in Fig. 5 b.Equally in this embodiment, described device wafer 42 is positioned at above described slide glass 41, also can form a contact-making surface 421 after described slide glass 41 and device wafer 42 bonding.Because slide glass 41 and device wafer 42 are all that edge thickness is less than interior thickness, just there is the slit that slide glass 41 and device wafer 42 are formed in this contact-making surface edge.In this embodiment, identical with institute's detailed examples in this invention of described slide glass 41 and the subsequent treatment after device wafer 42 ' bonding and reduction process, concrete implementation step can with reference to hereinafter described.
In the present embodiment, the bonding method of slide glass 41 and device wafer 42 can be the one in the multiple bonding pattern that maybe may occur used at present, as metal bonding, sticks together bonding, anode linkage, low temperature eutectic bonding, glass paste bonding etc.Exemplarily, device wafer 42 bonds on the surface of slide glass 41.
In step 2) in, refer to S2 step and Fig. 5 c of Fig. 4, use emery wheel 43 to cut or grinding described device wafer 42, to remove its curved edge.After device wafer 42 bonding of slide glass 41 and known dimensions (diameter), because slide glass 41 and device wafer 42 are all that edge thickness is less than interior thickness (more thinner to edge), so namely slit between the two becomes large from the most edge of its contact-making surface, in the present embodiment, determine after device wafer 42 that is determine and need the curved edge of grinding (namely from the minimum place of slit, namely the edge of contact-making surface starts to cut).
Concrete, use emery wheel 43 pairs of device wafers 42 to carry out edge grinding, at least comprise the following steps:
A) bonding wafer is by vacuum suction on chuck (not shown) surface, rotate, and device wafer 42 is positioned at above slide glass 41 with certain speed;
B) emery wheel 43 is vertically fixed on driving shaft (not shown), rotates with certain speed;
C) adjust emery wheel 43 position, setting emery wheel 43 cuts or the polishing width at grinding device wafer 42 edge, and emery wheel 43 carries out cutting until remove its curved edge along device wafer 42 edge of the polishing width set from top to bottom para-linkage wafer; Or adjustment emery wheel 43 position, setting emery wheel 43 cuts or the grinding depth at grinding device wafer 42 edge, and emery wheel 43 carries out grinding until remove its curved edge along device wafer 42 edge of the grinding depth set para-linkage wafer from outside to inside.
In the present embodiment, the material of emery wheel 43 can be using in current semicon industry or any one of emery wheel material that future may use, and exemplarily, in the present invention, the material of emery wheel 43 is preferably diamond.
In the present embodiment, chuck (not shown) is used for installing and fixing bonding wafer, and makes it therewith to rotate.Chuck can be vacuum chuck or electrostatic chuck, and has driven rotation by motor.
In the present embodiment, the rotation direction of emery wheel 43 and bonding wafer all has adjustability, and the two can rotate with identical direction, also can rotate with contrary direction.
In the present embodiment, emery wheel needs the polishing width of setting can determine according to the oblique angle size of device wafer 42, and namely the minimum place of the slit of bonding wafer is to the distance d of the outer of device wafer 42
1.According to the difference of device wafer size and type, the required polishing width at emery wheel 43. grinding device wafer 42 edge of setting is less than or equal to 5mm, and more preferably, required polishing width scope is between 1mm to 5mm.
Concrete, emery wheel 43 by device wafer 42 to slide glass 41 grinding, until be milled to the contact-making surface 411 of device wafer 42 and slide glass 41; Preferably, emery wheel 43 continues to slide glass 41 grinding, until slide glass 41 is ground away certain size d after being ground to contact-making surface 411
2; More preferably, the size d that is ground of slide glass 41
2it is 20 μm to about 30 μm, to guarantee that the curved edge of device wafer is entirely removed.
It is to be noted, emery wheel 43 is used to cut described device wafer 42 or the method for grinding should be not limited only to the method for once cutting or grinding described in step c), the method of following several repeatedly cutting or grinding can also be comprised: (1) adjustment emery wheel 43 position, first set a polishing width, emery wheel 43 carries out grinding, until be ground to desired depth along device wafer 42 edge of the polishing width set from top to bottom para-linkage wafer; Adjustment emery wheel 43 position, resets a polishing width, and emery wheel 43 carries out grinding, until be ground to same depth along device wafer 42 edge of the polishing width set from top to bottom para-linkage wafer; Repeat above-mentioned action, until be milled to the contact-making surface 411 of device wafer 42 and slide glass 41.(2) adjust emery wheel 43 position, first set a polishing width, emery wheel 43 carries out grinding along device wafer 42 edge of the polishing width set from top to bottom para-linkage wafer, is ground to certain depth; Adjustment emery wheel 43 position, resets a polishing width, and emery wheel 43 carries out grinding, until be ground to same depth along device wafer 42 edge of the polishing width set from top to bottom para-linkage wafer; Repeat above-mentioned action, until be milled to the contact-making surface 411 of device wafer 42 and slide glass 41; Adjustment emery wheel 43 position, the grinding depth of setting needed for emery wheel 43 grinding device wafer 42 edge, emery wheel 43 carries out grinding, until be milled to the contact-making surface 411 of device wafer 42 and slide glass 41 along device wafer 42 edge of the grinding depth set para-linkage wafer from outside to inside.(3) adjust emery wheel 43 position, first set a grinding depth, emery wheel 43 carries out grinding, until be milled to the contact-making surface 411 of device wafer 42 and slide glass 41 along device wafer 42 edge of the grinding depth set para-linkage wafer from outside to inside; Adjustment emery wheel 43 position, first set a grinding depth again, emery wheel 43 carries out grinding, until be milled to the contact-making surface 411 of device wafer 42 and slide glass 41 along device wafer 42 edge of the grinding depth set para-linkage wafer from outside to inside, repeat above-mentioned action, until be milled to required grinding depth.Device wafer 42 edge after grinding or cutting complete be rule perpendicular to contact-making surface.
In step 3), refer to S3 step and Fig. 5 d of Fig. 4, the device wafer 42 of described removal curved edge is thinned to required size.
Concrete, use grinding and polishing method to carry out thinning to device wafer 42, described traditional grinding and polishing method should comprise the following steps: roughly ground by bonding wafer, then refining; Described bonding wafer after fine grinding is carried out chemico-mechanical polishing.
Concrete, bonding wafer is roughly ground on polyurethane polishing pad, then refine, roughly grind and refine abrasive material used and comprise aluminium oxide, or the mixture of aluminium oxide and boron carbide, or the mixture making aluminium oxide and carborundum, or the mixture of aluminium oxide, boron carbide and carborundum, when described abrasive material is mixture, the weight fraction that described aluminium oxide accounts for described mixture is greater than 80%.
Concrete, abrasive material 5 ~ 30wt% that corase grind and fine grinding adopt, grinding fluid 0.1 ~ 0.5wt%, surplus is deionized water, and lapping liquid flow is 1 ~ 50ml/min, grinding pressure 50 ~ 150g/cm
2, rotating speed 40 ~ 80r/min, the granularity of the lapping liquid that corase grind adopts is W7, and the granularity of the lapping liquid that fine grinding adopts is W1.5.
Concrete, the described bonding wafer after fine grinding is carried out chemico-mechanical polishing on synthetic leather polishing pad, and chemico-mechanical polishing polishing fluid used comprises: nanometer abrasive 1 ~ 15wt%, oxidant is 1 ~ 3wt%, surfactant 0.01wt%, PH adjusting agent, surplus is deionized water.The size of the granularity of polishing fluid is 20 ~ 60nm, and pH value is 9.5, and polish pressure is 60 ~ 120g/cm2, rotating speed 60 ~ 100r/min.
It is to be noted; the abrasive material proportioning used in corase grind, fine grinding and polishing; the parameters such as flow, pressure and rotating speed can be adjusted according to actual needs accordingly by person skilled in the art scholar, specially illustrate, should too not limit the scope of the invention at this.
Concrete, the thinning size of device wafer 42 after chemico-mechanical polishing is less than or equal to 50 μm, and more preferably, the thinning size range of device wafer 42 is between 5 to 50 μm.
In sum, before thinning process, use emery wheel para-linkage wafer to process in the present invention, grind off the edge of device wafer arc, this just effectively prevent in bonding wafer thinning process and occurs wedge angle, and then stopped the generation of device wafer edge break problem, can ensure, under the prerequisite that device wafer edge does not break, to be thinned to less than 50 μm, to meet the needs of follow-up preparation technology, ensure the performance with latter made semiconductor device.Compared with existing reduction process, the present invention can not cause any pollution to thinning board and subsequent technique, and the equipment used is simple, is easy to operation, and operation is succinct, substantially increases production efficiency, reduces production cost and equipment cost.
Above-described embodiment is illustrative principle of the present invention and effect thereof only, but not for limiting the present invention.Any person skilled in the art scholar all without prejudice under spirit of the present invention and category, can modify above-described embodiment or changes.Therefore, such as have in art usually know the knowledgeable do not depart from complete under disclosed spirit and technological thought all equivalence modify or change, must be contained by claim of the present invention.
Claims (11)
1. a thining method for bonding wafer, is characterized in that, at least comprises the following steps:
1) slide glass and a device wafer are provided; Described slide glass and device wafer are carried out bonding, forms bonding wafer;
2) emery wheel is used to cut or grinding the device wafer in described bonding wafer, to remove its curved edge;
3) device wafer of described removal curved edge is thinned to required size.
2. the thining method of bonding wafer according to claim 1, it is characterized in that: step 1) in, described slide glass and device wafer bonding pattern are metal bonding, the one of sticking together in bonding, anode linkage, low temperature eutectic bonding, glass paste bonding pattern.
3. the thining method of bonding wafer according to claim 1, is characterized in that: step 1) in, described slide glass is wafer or glass.
4. the thining method of bonding wafer according to claim 1, is characterized in that: step 2) in, described use emery wheel cuts or grinding device wafer, at least comprises the following steps:
A) bonding wafer is by vacuum suction at chuck surface, rotate, and device wafer is positioned at above slide glass with certain speed;
B) emery wheel is vertically fixed on driving shaft, rotates with certain speed;
C) adjust emery wheel position, the cutting of setting emery wheel or the polishing width of grinding device Waffer edge, emery wheel carries out cutting until remove its curved edge along the device wafer edge of the polishing width set from top to bottom para-linkage wafer; Or adjustment emery wheel position, the grinding depth of setting emery wheel grinding device Waffer edge, emery wheel carries out grinding until remove its curved edge along the device wafer edge of the grinding depth set para-linkage wafer from outside to inside.
5. the thining method of bonding wafer according to claim 4, is characterized in that: in described step c), and the required polishing width of the emery wheel grinding device Waffer edge of setting is less than or equal to 5mm.
6. the thining method of bonding wafer according to claim 5, is characterized in that: in step c), and the required polishing width scope of the emery wheel grinding device Waffer edge of setting is between 1mm to 5mm.
7. the thining method of bonding wafer according to claim 1, is characterized in that: step 2) in, described emery wheel is cut or grinding, until the contact-making surface edge of described device wafer and slide glass to slide glass by device wafer.
8. the thining method of bonding wafer according to claim 4, it is characterized in that: in described step c), the cutting using the device wafer of emery wheel para-linkage wafer to carry out or grinding are by once cutting or method for grinding or repeatedly cutting or method for grinding realize.
9. the thining method of bonding wafer according to claim 1, is characterized in that: step 3) in, adopt the device wafer of grinding and polishing method to described removal curved edge to carry out thinning.
10. the thining method of bonding wafer according to claim 1, is characterized in that: step 3) in, thinning size is carried out to the device wafer of described removal curved edge and is less than or equal to 50 μm.
The thining method of 11. bonding wafers according to claim 10, is characterized in that: step 3) in, thinning size range is carried out between 5 μm to 50 μm to the device wafer of described removal curved edge.
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| CN109972204B (en) * | 2017-12-28 | 2021-09-17 | 济南晶正电子科技有限公司 | Ultra-thin ultra-flat wafer and method for manufacturing the same |
| CN109065508A (en) * | 2018-08-14 | 2018-12-21 | 济南晶正电子科技有限公司 | A kind of reversed table top composite construction ultra thin wafer and preparation method thereof |
| CN111276397A (en) * | 2018-12-04 | 2020-06-12 | 株式会社迪思科 | Method for processing wafer |
| CN111276397B (en) * | 2018-12-04 | 2024-04-05 | 株式会社迪思科 | Wafer processing method |
| CN110459555A (en) * | 2019-08-29 | 2019-11-15 | 长春长光圆辰微电子技术有限公司 | Manufacturing process method of the back side illumination image sensor crystal round fringes without silicon fiml defect |
| CN112201566A (en) * | 2020-09-22 | 2021-01-08 | 武汉电信器件有限公司 | Wafer thinning method and device and wafer unloading clamp |
| CN113471069A (en) * | 2021-05-10 | 2021-10-01 | 中国电子科技集团公司第十一研究所 | Infrared detector, hybrid chip and back thinning scratch processing method thereof |
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