CN107560521A - A kind of stacking accuracy measurement method at high offset interface and application - Google Patents
A kind of stacking accuracy measurement method at high offset interface and application Download PDFInfo
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- CN107560521A CN107560521A CN201710712593.8A CN201710712593A CN107560521A CN 107560521 A CN107560521 A CN 107560521A CN 201710712593 A CN201710712593 A CN 201710712593A CN 107560521 A CN107560521 A CN 107560521A
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- 239000003550 marker Substances 0.000 claims description 26
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- 238000005259 measurement Methods 0.000 claims description 13
- 239000004973 liquid crystal related substance Substances 0.000 claims description 6
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Abstract
The invention discloses a kind of stacking accuracy measurement method at high offset interface, comprise the following steps：Step S1) select wherein one layer of stack layer to be used as datum layer, select wherein another one or more layers of stack layer to be used as contraposition layer；Step S2) the first mark is set on the datum layer；Step S3) indicate in the contraposition layer corresponding to the position setting second of the described first mark；Step S4) center of first mark and the center of second mark are measured respectively；Step S5) calculate it is described first mark center and it is described second mark center between interval obtain stack precision.
Description
Technical Field
The invention relates to the fields of precision measurement and positioning between stacked layers and the like, in particular to a stacking precision measurement method for a high-offset interface.
Background
In the process of fabricating the liquid crystal panel, a plurality of steps are included, including stacking and combining different functional film layers. When the liquid crystal panels are stacked and combined, different film layers need to be accurately aligned to ensure the overall performance of the liquid crystal panels. Therefore, when the film layers are aligned, the film layers need to be positioned and measured to obtain the stacking accuracy of the film layers.
However, during the measurement, the thickness of the middle process increases, which may cause the alignment layer and the reference layer not to be simultaneously present in the field of view, or the boundary is blurred and cannot be measured by the current stacking accuracy test pattern.
Disclosure of Invention
The purpose of the invention is: the stacking precision measuring method of the high-offset interface is provided, the stacking precision is indirectly obtained by respectively measuring and comparing the positions of the reference layer and the alignment layer, the height difference of the stacking precision in the Z axis is simultaneously solved, and the problem of the well depth of a machine is solved.
The technical scheme for realizing the purpose is as follows: a stacking precision measuring method of a high offset interface comprises the following steps: step S1) selecting one of the stacked layers as a reference layer and selecting another one or more of the stacked layers as an alignment layer; step S2) sets a first flag on the reference layer; step S3) setting a second mark at the position of the alignment layer corresponding to the first mark; step S4) of measuring the center position of the first marker and the center position of the second marker, respectively; step S5) calculates the interval between the center position of the first marker and the center position of the second marker to obtain the stacking accuracy.
In a preferred embodiment of the present invention, the step S4) includes the steps of, step S41) establishing a three-dimensional rectangular coordinate, a Z-axis of which represents a stacking direction of the stacked layers; step S42) identifies the center coordinate position (X1, Y1) of the first marker and the center coordinate position (X2, Y2) of the second marker on the three-dimensional rectangular coordinates.
In a preferred embodiment of the present invention, the first mark and the second mark are respectively provided with a plurality of corresponding marks.
In a preferred embodiment of the present invention, the first mark and the second mark are arranged in an array.
In a preferred embodiment of the present invention, the step S42) includes the following steps: step S421) matching the first mark and the second mark to form a mark group; step S422) measuring the center coordinate position of the first mark and the center coordinate position of the second mark in each mark group after pairing one by one.
In a preferred embodiment of the present invention, when measuring different alignment layers, the steps S41) and S42) further include the following steps: step S43) is performed to correct the focus plane of the measured alignment layer along the Z-axis.
In a preferred embodiment of the present invention, the step S5) includes the steps of step S51) setting an initial interval (a, b) between the center coordinate position of the first flag and the center coordinate position of the second flag, and step S52) calculating the stacking accuracy of the center position of the first flag and the second center position on the X axis and the stacking accuracy on the Y axis, respectively, △ X-X2-X1-a, and △ Y-Y2-Y1-a.
In a preferred embodiment of the present invention, in step S51), a is 0 and b is 0.
In a preferred embodiment of the present invention, the first mark is a cross-shaped mark, and the second mark is a cross-shaped mark.
In a preferred embodiment of the present invention, the method for measuring stacking accuracy of a high-break-difference interface is applied to the measurement of a stacked layer of a liquid crystal panel.
The invention has the advantages that: according to the stacking precision measuring method and application of the high-fault-tolerance interface, the positions of the reference layer and the alignment layer are respectively measured and compared, the stacking precision between the stacking layers can be accurately and indirectly obtained in a coordinate mode, meanwhile, the height difference of the stacking precision in the Z axis direction is simultaneously resolved by respectively measuring the central position of the first mark and the central position of the second mark twice, and the problem of the trap depth of a machine table is solved.
Drawings
The invention is further explained below with reference to the figures and examples.
Fig. 1 is a sectional view showing a positional relationship between a first marker and a second marker.
FIG. 2 is a top view of a reference layer and an alignment layer.
FIG. 3 is a flowchart of the steps of example 1.
Fig. 4 is a step flowchart of step S4) in fig. 3.
Fig. 5 is a step flowchart of step S42) in fig. 4.
Fig. 6 is a step flowchart of step S5) in fig. 3.
Fig. 7 is a step flowchart of step S4) of embodiment 2.
Wherein,
1 a reference layer; 2, aligning the layers; 3, film layer;
11 a first flag; 21 second flag.
Detailed Description
The following description of the embodiments refers to the accompanying drawings for illustrating the specific embodiments in which the invention may be practiced. The directional terms used in the present invention, such as "up", "down", "front", "back", "left", "right", "top", "bottom", etc., refer to the directions of the attached drawings. Accordingly, the directional terms used are used for explanation and understanding of the present invention, and are not used for limiting the present invention.
Example 1
The stacking precision measuring method of the high-offset-difference interface comprises the following steps. It should be noted that the present embodiment is described simply by taking two layers of the most basic stacked layers as a description. The detecting instrument of the embodiment adopts a Total Pitch measuring machine.
As shown in fig. 1 to 3, step S1) selects one of the stacked layers as a reference layer 1 and selects another one or more of the stacked layers as an alignment layer 2. In order to clearly explain the positional relationship between the reference layer 1 and the alignment layer 2, in this embodiment, the reference layer 1 is defined as the bottom layer of the stacked layer, and the alignment layer 2 is defined as the penultimate layer of the stacked layer.
Step S2) sets a first flag 11 on the reference layer 1. In this embodiment, the first marks 11 on each of the reference layers 1 are cross-shaped, and the cross-shaped first marks 11 are distributed on the reference layers 1 in an array.
Step S3) sets a second mark 21 at a position of the alignment layer 2 corresponding to the first mark 11. Similarly, in the present embodiment, the second marks 21 are also arranged in a cross shape, and the second marks 21 of the cross shape are distributed on the alignment layer 2 in an array.
As shown in fig. 4 to 5, step S4) measures the center position of the first flag 11 and the center position of the second flag 21, respectively.
Specifically, the step S4) includes the following steps for more concrete visualization of the positions of the first marker 11 and the second marker 21 and for facilitating measurement and calculation of the stacking accuracy.
S41), a three-dimensional rectangular coordinate is established, the Z-axis of which represents the stacking direction of the stacked layers, in this embodiment, a two-dimensional rectangular coordinate may also be established, the two-dimensional rectangular coordinate does not include the Z-axis along the stacking direction of the stacked layers, only one layer is used as the alignment layer 2, therefore, during the alignment measurement, all the second marks 21 on the alignment layer 2 and the first marks 11 on the corresponding reference layer 1 are substantially identical in height, and therefore, during the measurement, the height difference between the alignment layer 2 and the reference layer 1 is identical, so that it can be ignored, if the height of the first mark 11 of the reference layer 1 is H, the height of the alignment layer 2 is H + △ H, and △ H is a fixed value, which represents the layer height of the film layer 3 represented by the alignment layer 2.
S42) identifies the center coordinate position (X1, Y1) of the first marker 11 and the center coordinate position (X2, Y2) of the second marker 21 on three-dimensional rectangular coordinates.
In the present embodiment, the stacking accuracy is measured more effectively and accurately; the second marks 21 on the alignment layer 2 are provided in plural, and the first marks 11 on the same reference layer 1 are provided in plural in correspondence. The first marks 11 and the second marks 21 are arranged in an array. Therefore, the stacking precision of different point positions on the same alignment layer 2 can be measured in multiple groups, and the stacking precision of the whole alignment layer 2 can be conveniently and comprehensively judged. Specifically, the step S42) includes the following steps.
S421) the first flag 11 and the second flag 21 are paired to form a flag group.
S422) measuring the center coordinate position of the first marker 11 and the center coordinate position of the second marker 21 in each of the marker sets after the pairing one by one.
As shown in fig. 6, step S5) calculates the interval between the center position of the first marker 11 and the center position of the second marker 21 to obtain the stacking accuracy. In this step, when the alignment layer 2 pair is located on the reference layer 1, there is an initial alignment position, and when the reference layer 1 and the alignment layer 2 are represented by the first mark 11 and the second mark 21, respectively, then at the initial position, the S5) includes the following steps.
S51) sets an initial interval (a, b) of the center coordinate position of the first marker 11 and the center coordinate position of the second marker 21. In step S51), a is set to 0 and b is set to 0. In this step, the initial position is a preset ideal alignment position, and if a is 0 and b is 0, the center positions of the first mark 11 and the second mark 21 are overlapped in an ideal state.
S52) respectively calculating the stacking accuracy of the center position of the first mark 11 and the second center position on the X axis and the stacking accuracy on the Y axis, △ X-X2-X1-a, △ Y-Y2-Y1-a, △ X, △ Y between the second mark 21 and the first mark 11, which are measured at different points on the same alignment layer 2, are respectively measured in multiple sets, so as to form a calculation list, and then processing is performed by a weighted average value or other functions, so as to obtain the stacking accuracy of the whole alignment layer 2.
Example 2
The difference between this embodiment and embodiment 1 is that in this embodiment, multiple layers of alignment layers 2 can be measured simultaneously in steps, and during measurement, one reference layer 1 is selected, different alignment layers 2 are aligned first, and then measured point by point, so-called point by point measurement, that is, the stacking accuracy of a first point position, such as the stacking accuracy of the second mark 21 on the first alignment layer 2 and the first mark 11 on the reference layer 1, is measured first, and the stacking accuracy of the second mark 21 on the second alignment layer 2 and the first mark 11 on the reference layer 1 is measured. Therefore, during measurement, since the thicknesses (heights) of the alignment layer 2 and the reference layer 1 are different, the focus plane of the measured alignment layer 2 along the Z-axis needs to be corrected to ensure that the measurement machine can clearly find the measurement marks (such as the first mark 11 and the second mark 21).
Therefore, as shown in fig. 7, in the present embodiment, when the different alignment layers 2 are measured, the following steps are further included between the step S41) and the step S42): s43) correcting the measured focal plane of the alignment layer 2 along the Z-axis.
The method for measuring the stacking accuracy of the high-break-difference interface in the embodiment 1 and the embodiment 2 is applied to the measurement of the stacked layers of the liquid crystal panel.
The present invention is not limited to the above preferred embodiments, and any modifications, equivalent substitutions and improvements made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. A stacking precision measuring method of a high-offset-difference interface is characterized by comprising the following steps:
step S1) selecting one of the stacked layers as a reference layer and selecting another one or more of the stacked layers as an alignment layer;
step S2) sets a first flag on the reference layer;
step S3) setting a second mark at the position of the alignment layer corresponding to the first mark;
step S4) of measuring the center position of the first marker and the center position of the second marker, respectively;
step S5) calculates the interval between the center position of the first marker and the center position of the second marker to obtain the stacking accuracy.
2. The method for measuring the stacking accuracy of a high-step interface according to claim 1, wherein the step S4) comprises the steps of:
step S41), establishing a three-dimensional rectangular coordinate, a Z-axis of which represents a stacking direction of the stacked layers;
step S42) of identifying the center coordinate position (X) of the first marker on the three-dimensional rectangular coordinates1，Y1) And the center coordinate position (X) of the second mark2，Y2)。
3. The method for measuring the stacking accuracy of a high-step interface according to claim 2, wherein a plurality of the first marks and a plurality of the second marks are provided in correspondence with each other.
4. The method of claim 2, wherein the first and second markers are arranged in an array.
5. The method for measuring the stacking accuracy of a high-step-difference interface according to claim 3, wherein the step S42) comprises the following steps:
step S421) matching the first mark and the second mark to form a mark group;
step S422) measuring the center coordinate position of the first mark and the center coordinate position of the second mark in each mark group after pairing one by one.
6. The method for measuring the stacking accuracy of high-profile interfaces as claimed in claim 2, wherein the step S41) and the step S42) further comprises the following steps when measuring different alignment layers:
step S43) is performed to correct the focus plane of the measured alignment layer along the Z-axis.
7. The method for measuring the stacking accuracy of a high-step interface according to claim 2, wherein the step S5) comprises the steps of:
step S51) setting an initial interval (a, b) of the center coordinate position of the first marker and the center coordinate position of the second marker;
step S52) calculates the stacking accuracy of the center position of the first flag and the second center position on the X axis and the stacking accuracy on the Y axis, △ X2-X1-a，△Y＝Y2-Y1-a。
8. The method for measuring the stacking accuracy of a high-step interface according to claim 7, wherein in step S51), a-0 and b-0 are set.
9. The method of claim 1, wherein the first mark is a cross shape and the second mark is a cross shape.
10. The method for measuring the stacking accuracy of a high-profile interface as claimed in claim 1, wherein the method is applied to the measurement of the stacked layers of the liquid crystal panel.
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| CN1359023A (en) * | 2000-12-12 | 2002-07-17 | 国际商业机器公司 | Thin layer material aligning method, substrate assembling method and aligning device |
| CN101197299A (en) * | 2006-12-08 | 2008-06-11 | 中芯国际集成电路制造(上海)有限公司 | Film stress detecting method |
| CN101789386A (en) * | 2009-01-24 | 2010-07-28 | 南亚科技股份有限公司 | Method for chip alignment |
| CN104979330A (en) * | 2014-04-10 | 2015-10-14 | 上海和辉光电有限公司 | A multilayer structure having offset measurement marks and an offset measurement method thereof |
| CN106483692A (en) * | 2016-12-28 | 2017-03-08 | 武汉华星光电技术有限公司 | Maked corrections the stacking precision methods measuring between high offset film layer by focus |
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- 2017-08-18 CN CN201710712593.8A patent/CN107560521A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1359023A (en) * | 2000-12-12 | 2002-07-17 | 国际商业机器公司 | Thin layer material aligning method, substrate assembling method and aligning device |
| CN101197299A (en) * | 2006-12-08 | 2008-06-11 | 中芯国际集成电路制造(上海)有限公司 | Film stress detecting method |
| CN101789386A (en) * | 2009-01-24 | 2010-07-28 | 南亚科技股份有限公司 | Method for chip alignment |
| CN104979330A (en) * | 2014-04-10 | 2015-10-14 | 上海和辉光电有限公司 | A multilayer structure having offset measurement marks and an offset measurement method thereof |
| CN106483692A (en) * | 2016-12-28 | 2017-03-08 | 武汉华星光电技术有限公司 | Maked corrections the stacking precision methods measuring between high offset film layer by focus |
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