CN107508601B - Noise reduction method based on combined MEMS accelerometer sensor chopping and electronic circuit - Google Patents
Noise reduction method based on combined MEMS accelerometer sensor chopping and electronic circuit Download PDFInfo
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- CN107508601B CN107508601B CN201710561498.2A CN201710561498A CN107508601B CN 107508601 B CN107508601 B CN 107508601B CN 201710561498 A CN201710561498 A CN 201710561498A CN 107508601 B CN107508601 B CN 107508601B
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- capacitance
- mems sensor
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- 238000000034 method Methods 0.000 title abstract description 20
- 230000009467 reduction Effects 0.000 title abstract description 11
- 238000006243 chemical reaction Methods 0.000 claims abstract description 34
- 230000008859 change Effects 0.000 claims abstract description 32
- 239000011159 matrix material Substances 0.000 claims description 41
- 230000001133 acceleration Effects 0.000 claims description 21
- 230000004044 response Effects 0.000 claims description 13
- 230000005284 excitation Effects 0.000 claims description 11
- 230000007704 transition Effects 0.000 claims description 2
- 239000003990 capacitor Substances 0.000 description 19
- 238000005070 sampling Methods 0.000 description 8
- 230000010354 integration Effects 0.000 description 4
- 238000006073 displacement reaction Methods 0.000 description 3
- 230000002596 correlated effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000725 suspension Substances 0.000 description 2
- 230000005483 Hooke's law Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000005226 mechanical processes and functions Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/125—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by capacitive pick-up
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
- H03M3/00—Conversion of analogue values to or from differential modulation
- H03M3/04—Differential modulation with several bits, e.g. differential pulse code modulation [DPCM]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0032—Packages or encapsulation
- B81B7/0035—Packages or encapsulation for maintaining a controlled atmosphere inside of the chamber containing the MEMS
- B81B7/0038—Packages or encapsulation for maintaining a controlled atmosphere inside of the chamber containing the MEMS using materials for controlling the level of pressure, contaminants or moisture inside of the package, e.g. getters
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P21/00—Testing or calibrating of apparatus or devices covered by the preceding groups
- G01P21/02—Testing or calibrating of apparatus or devices covered by the preceding groups of speedometers
- G01P21/025—Testing or calibrating of apparatus or devices covered by the preceding groups of speedometers for measuring speed of fluids; for measuring speed of bodies relative to fluids
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
- H03M3/00—Conversion of analogue values to or from differential modulation
- H03M3/30—Delta-sigma modulation
- H03M3/322—Continuously compensating for, or preventing, undesired influence of physical parameters
- H03M3/324—Continuously compensating for, or preventing, undesired influence of physical parameters characterised by means or methods for compensating or preventing more than one type of error at a time, e.g. by synchronisation or using a ratiometric arrangement
- H03M3/344—Continuously compensating for, or preventing, undesired influence of physical parameters characterised by means or methods for compensating or preventing more than one type of error at a time, e.g. by synchronisation or using a ratiometric arrangement by filtering other than the noise-shaping inherent to delta-sigma modulators, e.g. anti-aliasing
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Theoretical Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Pressure Sensors (AREA)
- Micromachines (AREA)
- Compression, Expansion, Code Conversion, And Decoders (AREA)
- Gyroscopes (AREA)
Abstract
Description
Claims (7)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201261620019P | 2012-04-04 | 2012-04-04 | |
US61/620,019 | 2012-04-04 | ||
CN201310120172.8A CN103368577B (en) | 2012-04-04 | 2013-04-08 | Based on the noise-reduction method and electronic circuit to combination type MEMS accelerometer sensor copped wave |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201310120172.8A Division CN103368577B (en) | 2012-04-04 | 2013-04-08 | Based on the noise-reduction method and electronic circuit to combination type MEMS accelerometer sensor copped wave |
Publications (2)
Publication Number | Publication Date |
---|---|
CN107508601A CN107508601A (en) | 2017-12-22 |
CN107508601B true CN107508601B (en) | 2021-12-28 |
Family
ID=49369232
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2013201717578U Expired - Lifetime CN203261317U (en) | 2012-04-04 | 2013-04-08 | Electronic circuit based on chopping for merged MEMS accelerometer sensor |
CN201310120172.8A Active CN103368577B (en) | 2012-04-04 | 2013-04-08 | Based on the noise-reduction method and electronic circuit to combination type MEMS accelerometer sensor copped wave |
CN201710561498.2A Active CN107508601B (en) | 2012-04-04 | 2013-04-08 | Noise reduction method based on combined MEMS accelerometer sensor chopping and electronic circuit |
Family Applications Before (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2013201717578U Expired - Lifetime CN203261317U (en) | 2012-04-04 | 2013-04-08 | Electronic circuit based on chopping for merged MEMS accelerometer sensor |
CN201310120172.8A Active CN103368577B (en) | 2012-04-04 | 2013-04-08 | Based on the noise-reduction method and electronic circuit to combination type MEMS accelerometer sensor copped wave |
Country Status (2)
Country | Link |
---|---|
KR (1) | KR102045784B1 (en) |
CN (3) | CN203261317U (en) |
Families Citing this family (33)
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US8739626B2 (en) | 2009-08-04 | 2014-06-03 | Fairchild Semiconductor Corporation | Micromachined inertial sensor devices |
EP2616387B1 (en) | 2010-09-18 | 2018-05-16 | Fairchild Semiconductor Corporation | Packaging to reduce stress on microelectromechanical systems |
EP2616772B1 (en) | 2010-09-18 | 2016-06-22 | Fairchild Semiconductor Corporation | Micromachined monolithic 3-axis gyroscope with single drive |
EP2616389B1 (en) | 2010-09-18 | 2017-04-05 | Fairchild Semiconductor Corporation | Multi-die mems package |
KR101938609B1 (en) | 2010-09-18 | 2019-01-15 | 페어차일드 세미컨덕터 코포레이션 | Micromachined monolithic 6-axis inertial sensor |
WO2012037501A2 (en) | 2010-09-18 | 2012-03-22 | Cenk Acar | Flexure bearing to reduce quadrature for resonating micromachined devices |
US8813564B2 (en) | 2010-09-18 | 2014-08-26 | Fairchild Semiconductor Corporation | MEMS multi-axis gyroscope with central suspension and gimbal structure |
KR101332701B1 (en) | 2010-09-20 | 2013-11-25 | 페어차일드 세미컨덕터 코포레이션 | Microelectromechanical pressure sensor including reference capacitor |
EP2619130A4 (en) | 2010-09-20 | 2014-12-10 | Fairchild Semiconductor | Through silicon via with reduced shunt capacitance |
US9062972B2 (en) | 2012-01-31 | 2015-06-23 | Fairchild Semiconductor Corporation | MEMS multi-axis accelerometer electrode structure |
US8978475B2 (en) | 2012-02-01 | 2015-03-17 | Fairchild Semiconductor Corporation | MEMS proof mass with split z-axis portions |
US9488693B2 (en) | 2012-04-04 | 2016-11-08 | Fairchild Semiconductor Corporation | Self test of MEMS accelerometer with ASICS integrated capacitors |
KR102045784B1 (en) * | 2012-04-04 | 2019-11-18 | 페어차일드 세미컨덕터 코포레이션 | Noise reduction method with chopping for a merged mems accelerometer sensor |
KR102058489B1 (en) | 2012-04-05 | 2019-12-23 | 페어차일드 세미컨덕터 코포레이션 | Mems device front-end charge amplifier |
US9069006B2 (en) | 2012-04-05 | 2015-06-30 | Fairchild Semiconductor Corporation | Self test of MEMS gyroscope with ASICs integrated capacitors |
EP2647952B1 (en) | 2012-04-05 | 2017-11-15 | Fairchild Semiconductor Corporation | Mems device automatic-gain control loop for mechanical amplitude drive |
EP2647955B8 (en) | 2012-04-05 | 2018-12-19 | Fairchild Semiconductor Corporation | MEMS device quadrature phase shift cancellation |
KR101999745B1 (en) | 2012-04-12 | 2019-10-01 | 페어차일드 세미컨덕터 코포레이션 | Micro-electro-mechanical-system(mems) driver |
US9625272B2 (en) | 2012-04-12 | 2017-04-18 | Fairchild Semiconductor Corporation | MEMS quadrature cancellation and signal demodulation |
DE102013014881B4 (en) | 2012-09-12 | 2023-05-04 | Fairchild Semiconductor Corporation | Enhanced silicon via with multi-material fill |
US9835647B2 (en) | 2014-03-18 | 2017-12-05 | Fairchild Semiconductor Corporation | Apparatus and method for extending analog front end sense range of a high-Q MEMS sensor |
CN104535796A (en) * | 2014-12-18 | 2015-04-22 | 清华大学 | Three-electrode micromechanical accelerometer digital close-loop control circuit and interface circuit thereof and three-electrode micromechanical accelerometer system |
US9976924B2 (en) | 2015-04-20 | 2018-05-22 | Infineon Technologies Ag | System and method for a MEMS sensor |
US9897504B2 (en) * | 2015-04-20 | 2018-02-20 | Infineon Technologies Ag | System and method for a MEMS sensor |
CN106067823B (en) * | 2015-04-20 | 2020-12-08 | 英飞凌科技股份有限公司 | Systems and methods for MEMS sensors |
US20170003315A1 (en) * | 2015-06-30 | 2017-01-05 | Freescale Semiconductor, Inc. | Mems sensor devices having a self-test mode |
CN105915219B (en) * | 2016-04-08 | 2019-07-12 | 中国科学院微电子研究所 | An analog-to-digital conversion circuit |
DE102016109118A1 (en) * | 2016-05-18 | 2017-11-23 | Infineon Technologies Ag | Circuit architecture for a measuring device, a level converter circuit, a charge pumping stage and a charge pump and method for operating these |
CN106452448A (en) * | 2016-10-20 | 2017-02-22 | 湘潭芯力特电子科技有限公司 | Switched capacitor integrator with chopping function |
DE102017209096A1 (en) * | 2017-05-31 | 2018-12-06 | Robert Bosch Gmbh | Evaluation circuit for a capacitive acceleration sensor and device for detecting an acceleration |
CN109813341B (en) * | 2019-02-26 | 2023-10-31 | 南京理工大学 | A silicon micromachined gyroscope driving force coupling error online self-calibration system |
CN112564711B (en) * | 2021-02-20 | 2021-06-01 | 坤元微电子(南京)有限公司 | Continuous time chopping Delta Sigma modulator |
CN117805437B (en) * | 2024-02-29 | 2024-05-28 | 华中科技大学 | An electrostatic accelerometer with AC/DC hybrid circuit to reduce 1/f noise of readout circuit |
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CN1961485A (en) * | 2004-05-28 | 2007-05-09 | 皇家飞利浦电子股份有限公司 | Bitstream controlled reference signal generation for a sigma-delta modulator |
CN101213461A (en) * | 2005-06-03 | 2008-07-02 | 辛纳普蒂克斯公司 | Methods and systems for detecting a capacitance using SIGMA-DELTA measurement techniques |
CN101832788A (en) * | 2009-03-11 | 2010-09-15 | 中国科学院电子学研究所 | Capacitor continuous time reading circuit adopting chopped wave stabilizing technology |
CN102332894A (en) * | 2010-06-10 | 2012-01-25 | 阿尔卑斯电气株式会社 | Digital filter |
CN203261317U (en) * | 2012-04-04 | 2013-10-30 | 快捷半导体(苏州)有限公司 | Electronic circuit based on chopping for merged MEMS accelerometer sensor |
Family Cites Families (10)
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FR2790095B1 (en) * | 1999-02-18 | 2001-04-06 | Siemens Automotive Sa | CURRENT MEASURING DEVICE AND CORRESPONDING METHOD |
JP2000329786A (en) * | 1999-05-24 | 2000-11-30 | Hokuriku Electric Ind Co Ltd | Acceleration detecting device provided with piezoelectric acceleration sensor |
US6556345B1 (en) * | 2001-06-21 | 2003-04-29 | Onetta, Inc. | Optical network equipment with control and data paths |
US6975258B2 (en) * | 2003-01-23 | 2005-12-13 | Corporation For National Research Initiatives | Circuit for direct digital delta-sigma conversion of variable electrical capacitance |
WO2006034177A1 (en) * | 2004-09-17 | 2006-03-30 | Analog Devices, Inc. | Multi-bit continuous-time front-end sigma-delta adc using chopper stabilization |
WO2006132960A1 (en) * | 2005-06-03 | 2006-12-14 | Synaptics Incorporated | Methods and systems for detecting a capacitance using sigma-delta measurement techniques |
US7538705B2 (en) * | 2006-07-25 | 2009-05-26 | Microchip Technology Incorporated | Offset cancellation and reduced source induced 1/f noise of voltage reference by using bit stream from over-sampling analog-to-digital converter |
US8000789B2 (en) * | 2006-09-28 | 2011-08-16 | Medtronic, Inc. | Capacitive interface circuit for low power sensor system |
JP2008157917A (en) * | 2006-11-28 | 2008-07-10 | Toshiba Corp | Circuit for detecting capacity difference |
US8031094B2 (en) * | 2009-09-11 | 2011-10-04 | Apple Inc. | Touch controller with improved analog front end |
-
2013
- 2013-04-03 KR KR1020130036311A patent/KR102045784B1/en active Active
- 2013-04-08 CN CN2013201717578U patent/CN203261317U/en not_active Expired - Lifetime
- 2013-04-08 CN CN201310120172.8A patent/CN103368577B/en active Active
- 2013-04-08 CN CN201710561498.2A patent/CN107508601B/en active Active
Patent Citations (5)
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CN1961485A (en) * | 2004-05-28 | 2007-05-09 | 皇家飞利浦电子股份有限公司 | Bitstream controlled reference signal generation for a sigma-delta modulator |
CN101213461A (en) * | 2005-06-03 | 2008-07-02 | 辛纳普蒂克斯公司 | Methods and systems for detecting a capacitance using SIGMA-DELTA measurement techniques |
CN101832788A (en) * | 2009-03-11 | 2010-09-15 | 中国科学院电子学研究所 | Capacitor continuous time reading circuit adopting chopped wave stabilizing technology |
CN102332894A (en) * | 2010-06-10 | 2012-01-25 | 阿尔卑斯电气株式会社 | Digital filter |
CN203261317U (en) * | 2012-04-04 | 2013-10-30 | 快捷半导体(苏州)有限公司 | Electronic circuit based on chopping for merged MEMS accelerometer sensor |
Also Published As
Publication number | Publication date |
---|---|
KR102045784B1 (en) | 2019-11-18 |
CN103368577B (en) | 2017-08-08 |
CN107508601A (en) | 2017-12-22 |
CN103368577A (en) | 2013-10-23 |
CN203261317U (en) | 2013-10-30 |
KR20130112792A (en) | 2013-10-14 |
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Address after: Jiangsu province Suzhou Industrial Park Tong Road No. 1 Applicant after: Fairchild Semiconductor (Suzhou) Co., Ltd. Applicant after: Fairchild Semiconductor Corp. Address before: Suzhou City, Jiangsu province 215021 Jiangsu province Suzhou Industrial Park Tong Road No. 1 Applicant before: Fairchild Semiconductor (Suzhou) Co., Ltd. Applicant before: Fairchild Semiconductor Corp. |
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Effective date of registration: 20190724 Address after: Floor 1, Building 2, 235 Chengbei Road, Jiading District, Shanghai Applicant after: Shanghai Xirui Technology Co., Ltd. Address before: Arizona, USA Applicant before: Fairchild Semiconductor Corp. |
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Address after: 200000 room 307, floor 3, No. 1328, Dingxi Road, Changning District, Shanghai Applicant after: Shanghai Sirui Technology Co.,Ltd. Address before: Floor 1, building 2, No. 235, Chengbei Road, Jiading District, Shanghai, 201800 Applicant before: Shanghai Silicon Technology Co.,Ltd. |
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