CN107301964A - Bernoulli Jacob's base unit and depositing device - Google Patents
Bernoulli Jacob's base unit and depositing device Download PDFInfo
- Publication number
- CN107301964A CN107301964A CN201610237813.1A CN201610237813A CN107301964A CN 107301964 A CN107301964 A CN 107301964A CN 201610237813 A CN201610237813 A CN 201610237813A CN 107301964 A CN107301964 A CN 107301964A
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- Prior art keywords
- stomata
- gas
- wafer
- base unit
- bernoulli jacob
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The present invention proposes a kind of Bernoulli Jacob's base unit and depositing device, in base-plates surface, the stomata with inclination angle is set, the gas of ejection is set to be spread towards pedestal outside, gas piping provides the gas of predetermined pressure for stomata, when wafer is placed on base-plates surface, the gas sprayed by stomata, on the one hand by means of bernoulli principle wafer can be made to be attracted to base-plates surface, on the other hand the gas sprayed spreads to the surrounding of wafer, reacting gas is avoided to enter in the gap between wafer and pedestal in wafer rear formation film, in addition, wafer keeps preset distance with pedestal, realize that wafer is not contacted completely with pedestal, so as to ensure that wafer rear is not in defect, also extra film will not be grown, the performance of wafer can be improved.
Description
Technical field
The present invention relates to field of semiconductor manufacture, more particularly to a kind of Bernoulli Jacob's base unit and depositing device.
Background technology
With the lasting reduction of the characteristic size of semiconductor devices, the thickness evenness of epitaxial layer can influence light
The accuracy of carving technology, one reason for this is that the thin film deposition of the brilliant back of the body.
Fig. 1 a to Fig. 1 c are refer to, wherein, Fig. 1 a are normally placed on pedestal for wafer in the prior art
Structural representation, Fig. 1 b place the structural representation for deviation occur for wafer in the prior art on pedestal, scheme
1c is that wafer is placed on the structural representation on pedestal by thimble (Lift pin).From Fig. 1 a, normally
In the case of, wafer 20 can be placed on pedestal 10, however, due to existing between pedestal 10 and wafer 20
Gap, when carrying out film growth to wafer 20, reacting gas can enter between wafer 20 and pedestal 10
Gap, and in the backside deposition film of wafer 20.As shown in Figure 1 b, when wafer 20, which is placed, deviation occurs,
Gap between wafer 20 and pedestal 10 can increase, and the back side of wafer 20 is grown thicker film 30.
In the another aspect of prior art, wafer can be fixed by the way of thimble, as illustrated in figure 1 c, thimble 40
It is flexible above and below being carried out in pedestal 10, for jack-up wafer 20, however, in the position of the jack-up of thimble 30
Put and the back side other positions of wafer 20 can equally form film 30.
Fig. 2 a to Fig. 2 b are refer to, Fig. 2 a are the structural representation that oxide layer is grown in wafer rear；Fig. 2 b
To carry out the membrane structure schematic diagram of wafer rear after outer layer growth；Specifically, in the growth of the back side of wafer 20
During oxide layer 30, back side meeting existing defects 31 at thimble, when the surface to wafer carries out outer layer growth,
Due to back side existing defects 31, then the uneven silicon layer 32 of a circle can be formed, so as to influence the globality of wafer
Energy.
Refer to Fig. 3 a and Fig. 3 b, Fig. 3 a is the structural representation that there is natural oxidizing layer in wafer rear；
Fig. 3 b are the membrane structure schematic diagram for carrying out wafer rear after outer layer growth；Because there is nature in wafer rear
Oxide layer 30, then need not carry out the growth of extra oxide layer, but at thimble still can existing defects 31,
When the natural oxidizing layer 30 to crystal column surface is removed, wafer rear can also remove part natural oxidizing layer,
So as to expose the back side of wafer 20, then, when carrying out the growth of epitaxial layer to wafer 20, the wafer back of the body
Face can form one layer of more uniform silicon layer 21 and one layer of uneven silicon layer 32, so as to influence the whole of wafer
Performance.
The content of the invention
It is an object of the invention to provide a kind of Bernoulli Jacob's base unit and depositing device, wafer and base can be made
Seat is not contacted completely, wafer rear can be avoided to produce extra thin film deposition, it is ensured that the performance of wafer.
To achieve these goals, the present invention proposes a kind of Bernoulli Jacob's base unit, including：
Pedestal, end surface is provided with multiple stomatas, and the other end is provided with axis, and the stomata has inclination angle, made
The gas of ejection spreads towards pedestal outside；
An at least pipe gas piping, in the axis, and through the pedestal, connects the stomata,
The gas of predetermined pressure is provided for the stomata.
Further, in described Bernoulli Jacob's base unit, the stomata is evenly distributed on the pedestal table
Face.
Further, in described Bernoulli Jacob's base unit, the stomata is divided into inner ring stomata and outer ring gas
Hole, the inner ring stomata is close to the central area of the pedestal, and the outer ring stomata is close to the side of the pedestal
Edge region.
Further, in described Bernoulli Jacob's base unit, the gas piping is two independent pipelines,
Respectively inner ring stomata and outer ring stomata provide gas.
Further, in described Bernoulli Jacob's base unit, the inclination angle scope of the stomata is 10 °~60 °.
Further, in described Bernoulli Jacob's base unit, the gas that the gas piping is provided is H2。
In another aspect of the present invention, it is also proposed that a kind of depositing device, including Bai Nu as described above
Niche base device and reaction chamber, Bernoulli Jacob's base unit are arranged in the reaction chamber, and wafer leads to
Bernoulli principle absorption is crossed on the surface of Bernoulli Jacob's base unit.
Further, in described depositing device, the stomata in Bernoulli Jacob's base unit is uniformly distributed
In base-plates surface.
Further, in described depositing device, the stomata is divided into inner ring stomata and outer ring stomata, institute
Inner ring stomata is stated close to the central area of the pedestal, fringe region of the outer ring stomata close to the pedestal.
Further, in described depositing device, the gas piping in Bernoulli Jacob's base unit is two
Bar independent pipeline, respectively inner ring stomata and outer ring stomata provide gas.
Further, in described depositing device, the inclination angle scope of the stomata is 10 °~60 °.
Further, in described depositing device, the gas piping in Bernoulli Jacob's base unit is provided
Gas be H2。
Further, in described depositing device, multitube gas piping is carried in Bernoulli Jacob's base unit
The gas pressure of confession is adjustable.
Compared with prior art, the beneficial effects are mainly as follows：Set to have in base-plates surface and incline
The stomata at angle, makes the gas of ejection towards diffusion on the outside of the pedestal, gas piping provides pre- level pressure for stomata
The gas of power, when wafer is placed on base-plates surface, the gas sprayed by stomata on the one hand can be by means of
Bernoulli principle makes wafer be attracted to base-plates surface, and the gas on the other hand sprayed spreads to the surrounding of wafer,
Reacting gas is avoided to enter in wafer rear formation film in the gap between wafer and pedestal, in addition, wafer
Preset distance is kept with pedestal, realizes that wafer is not contacted completely with pedestal, so as to ensure wafer rear not
Meeting existing defects, will not also grow extra film, it is possible to increase the performance of wafer.
Brief description of the drawings
Fig. 1 a are normally placed on the structural representation on pedestal for wafer in the prior art；
Fig. 1 b place the structural representation for deviation occur for wafer in the prior art on pedestal；
Fig. 1 c are placed on the structural representation on pedestal by thimble for wafer in the prior art；
Fig. 2 a is in the prior art in the structural representations of wafer rear growth oxide layer；
Fig. 2 b are the membrane structure schematic diagram for carrying out wafer rear after outer layer growth in the prior art；
Fig. 3 a are there is the structural representation of natural oxidizing layer in wafer rear in the prior art；
Fig. 3 b are the membrane structure schematic diagram for carrying out wafer rear after outer layer growth in the prior art；
Fig. 4 is the diagrammatic cross-section of Bernoulli Jacob's base unit and depositing device in one embodiment of the invention；
Fig. 5 is the top view of Bernoulli Jacob's base unit in one embodiment of the invention.
Embodiment
The Bernoulli Jacob's base unit and depositing device of the present invention are retouched in more detail below in conjunction with schematic diagram
State, which show the preferred embodiments of the present invention, it should be appreciated that those skilled in the art can change herein
The present invention of description, and still realize the advantageous effects of the present invention.Therefore, description below is appreciated that
For the widely known of those skilled in the art, and it is not intended as limitation of the present invention.
For clarity, not describing whole features of practical embodiments.In the following description, public affairs are not described in detail
The function and structure known, because they can make the present invention chaotic due to unnecessary details.It will be understood that
In the exploitation of any practical embodiments, it is necessary to make a large amount of implementation details to realize the specific objective of developer,
For example according to about system or about the limitation of business, another embodiment is changed into by one embodiment.Separately
Outside, it will be understood that this development is probably complicated and time-consuming, but for people in the art
It is only routine work for member.
The present invention is more specifically described by way of example referring to the drawings in the following passage.According to it is following explanation and
Claims, advantages and features of the invention will become apparent from.It should be noted that, accompanying drawing is using very simple
The form of change and use non-accurately ratio, only to it is convenient, lucidly aid in illustrating the embodiment of the present invention
Purpose.
Embodiment one
Fig. 4 and Fig. 5 are refer to, in the present embodiment, it is proposed that a kind of Bernoulli Jacob's base unit, including：Base
Seat 200, the end surface of pedestal 200 is provided with multiple stomatas 210, and the other end is provided with axis 220, described
There is inclination angle in stomata 210, the gas of ejection is spread towards the outside of pedestal 200；An at least pipe gas
Pipeline, in the axis 220, and through the pedestal 200, connects the stomata 210, is described
Stomata provides the gas of predetermined pressure.
Specifically, the stomata 210 is evenly distributed on the surface of the pedestal 200, pedestal is evenly distributed on
During 200 surface, the follow-up absorption affinity provided for wafer is more uniform, it is ensured that wafer can be good at being adsorbed
In the near surface of pedestal 200.
Fig. 5 is refer to, in the present embodiment, 210 points of the stomata is inner ring stomata and outer ring stomata, described
Inner ring stomata is close to the central area of the pedestal 200, and the outer ring stomata is close to the side of the pedestal 200
Edge region.Specifically, the number of inner ring stomata and outer ring stomata can be different, set location can also basis
Different requirements are selected, and are no longer limited herein.
In the present embodiment, the inclination angle scope of the stomata 210 is 10 °~60 °, e.g. 30 °, the inclination angle
The opening of stomata 210 is spread towards the outside of pedestal 200, be easy to gas to spray to absorption in the table of pedestal 200
The surrounding of wafer on face.
In the present embodiment, the gas piping is two independent pipelines, respectively first gas pipeline 231
With second gas pipeline 232, the first gas pipeline 231 provides gas, second gas for inner ring stomata
Body pipeline 232 provides gas for the outer ring stomata.It is pointed out that those skilled in the art ought to know
Dawn, except 2 independent pipelines that the present embodiment is provided, the pipeline of 3 and the above can also be included, herein
Do not repeat.
In the present embodiment, the gas that the gas piping is provided is H2, can so avoid influenceing wafer table
The formation of face silicon produces the pollution of other gases.
In the another aspect of the present embodiment, it is also proposed that a kind of depositing device, including Bai Nu as described above
Niche base device and reaction chamber, Bernoulli Jacob's base unit are arranged in the reaction chamber, and wafer leads to
Bernoulli principle absorption is crossed on the surface of Bernoulli Jacob's base unit.
In the present embodiment there is provided first gas pipeline 231 and second gas pipeline 232 can basis
Different requirements carries out the regulation of gas pressure, and two pipe pipelines are independent to be mutually independent of each other.In the present embodiment,
By bernoulli principle by wafer adsorption on pedestal, and with pedestal keep preset space length, can be good at keeping away
Exempt from pedestal pollution wafer, additionally it is possible to make heat radiation of the pedestal to wafer more uniform, it is to avoid wafer formation sliding
Dislocation, improves the performance of wafer.
To sum up, in Bernoulli Jacob's base unit provided in an embodiment of the present invention and depositing device, in base-plates surface
Stomata with inclination angle is set, makes the gas of ejection towards diffusion on the outside of the pedestal, gas piping is stomata
The gas of predetermined pressure is provided, when wafer is placed on base-plates surface, the gas sprayed by stomata, on the one hand
Wafer can be made to be attracted to base-plates surface by means of bernoulli principle, the gas on the other hand sprayed is to wafer
Surrounding diffusion, it is to avoid reacting gas enters in wafer rear formation film in gap between wafer and pedestal,
In addition, wafer keeps preset distance with pedestal, realize that wafer is not contacted completely with pedestal, so as to ensure
Wafer rear is not in defect, will not also grow extra film, it is possible to increase the performance of wafer.
The preferred embodiments of the present invention are above are only, any restriction effect is not played to the present invention.Appoint
What person of ordinary skill in the field, in the range of technical scheme is not departed from, to the present invention
The technical scheme and technology contents of exposure make any type of equivalent substitution or modification etc. variation, belong to without departing from
The content of technical scheme, still falls within protection scope of the present invention.
Claims (13)
1. a kind of Bernoulli Jacob's base unit, it is characterised in that including：
Pedestal, end surface is provided with multiple stomatas, and the other end is provided with axis, and the stomata has inclination angle, made
The gas of ejection spreads towards pedestal outside；
An at least pipe gas piping, in the axis, and through the pedestal, connects the stomata,
The gas of predetermined pressure is provided for the stomata.
2. Bernoulli Jacob's base unit as claimed in claim 1, it is characterised in that the stomata is uniformly distributed
In the base-plates surface.
3. Bernoulli Jacob's base unit as claimed in claim 2, it is characterised in that the stomata is divided into inner ring
Stomata and outer ring stomata, the inner ring stomata is close to the central area of the pedestal, and the outer ring stomata is close
The fringe region of the pedestal.
4. Bernoulli Jacob's base unit as claimed in claim 3, it is characterised in that the gas piping is two
Bar independent pipeline, respectively inner ring stomata and outer ring stomata provide gas.
5. Bernoulli Jacob's base unit as claimed in claim 1, it is characterised in that the inclination angle model of the stomata
Enclose for 10 °~60 °.
6. Bernoulli Jacob's base unit as claimed in claim 1, it is characterised in that the gas piping is provided
Gas be H2。
7. a kind of depositing device, it is characterised in that including Bernoulli Jacob's base unit as claimed in claim 1
And reaction chamber, Bernoulli Jacob's base unit is in the reaction chamber, and it is former that wafer passes through Bernoulli Jacob
Reason absorption is on the surface of Bernoulli Jacob's base unit.
8. depositing device as claimed in claim 7, it is characterised in that in Bernoulli Jacob's base unit
Stomata is evenly distributed on base-plates surface.
9. depositing device as claimed in claim 8, it is characterised in that the stomata be divided into inner ring stomata and
Outer ring stomata, the inner ring stomata is close to the central area of the pedestal, and the outer ring stomata is close to the base
The fringe region of seat.
10. depositing device as claimed in claim 9, it is characterised in that in Bernoulli Jacob's base unit
Gas piping be two independent pipelines, respectively inner ring stomata and outer ring stomata provides gas.
11. depositing device as claimed in claim 7, it is characterised in that the inclination angle scope of the stomata is
10 °~60 °.
12. depositing device as claimed in claim 7, it is characterised in that in Bernoulli Jacob's base unit
Gas piping provide gas be H2。
13. depositing device as claimed in claim 7, it is characterised in that in Bernoulli Jacob's base unit
The gas pressure that multitube gas piping is provided is adjustable.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610237813.1A CN107301964A (en) | 2016-04-15 | 2016-04-15 | Bernoulli Jacob's base unit and depositing device |
| TW105126457A TW201738937A (en) | 2016-04-15 | 2016-08-18 | Bernoulli susceptor and deopsition equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610237813.1A CN107301964A (en) | 2016-04-15 | 2016-04-15 | Bernoulli Jacob's base unit and depositing device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107301964A true CN107301964A (en) | 2017-10-27 |
Family
ID=60137056
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610237813.1A Pending CN107301964A (en) | 2016-04-15 | 2016-04-15 | Bernoulli Jacob's base unit and depositing device |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN107301964A (en) |
| TW (1) | TW201738937A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107326434A (en) * | 2016-04-28 | 2017-11-07 | 上海新昇半导体科技有限公司 | Bernoulli Jacob's pedestal |
| CN112309950A (en) * | 2019-07-26 | 2021-02-02 | 上海宏轶电子科技有限公司 | Wafer cleaning machine platform |
| CN113291814A (en) * | 2021-05-28 | 2021-08-24 | 艾华(无锡)半导体科技有限公司 | Suction disc group for sucking multiple wafers |
| EP4120331A4 (en) * | 2020-03-12 | 2024-05-01 | Beijing NAURA Microelectronics Equipment Co., Ltd. | Chuck structure of semiconductor cleaning device and semiconductor cleaning device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102687262A (en) * | 2009-12-23 | 2012-09-19 | Memc电子材料有限公司 | Semiconductor wafer transport system |
| JP2015103701A (en) * | 2013-11-26 | 2015-06-04 | Ｎｅｃディスプレイソリューションズ株式会社 | Non-contact holding mechanism |
| CN104813460A (en) * | 2012-11-27 | 2015-07-29 | 盛美半导体设备（上海）有限公司 | Substrate supporting apparatus |
-
2016
- 2016-04-15 CN CN201610237813.1A patent/CN107301964A/en active Pending
- 2016-08-18 TW TW105126457A patent/TW201738937A/en unknown
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102687262A (en) * | 2009-12-23 | 2012-09-19 | Memc电子材料有限公司 | Semiconductor wafer transport system |
| CN104813460A (en) * | 2012-11-27 | 2015-07-29 | 盛美半导体设备（上海）有限公司 | Substrate supporting apparatus |
| JP2015103701A (en) * | 2013-11-26 | 2015-06-04 | Ｎｅｃディスプレイソリューションズ株式会社 | Non-contact holding mechanism |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107326434A (en) * | 2016-04-28 | 2017-11-07 | 上海新昇半导体科技有限公司 | Bernoulli Jacob's pedestal |
| CN112309950A (en) * | 2019-07-26 | 2021-02-02 | 上海宏轶电子科技有限公司 | Wafer cleaning machine platform |
| EP4120331A4 (en) * | 2020-03-12 | 2024-05-01 | Beijing NAURA Microelectronics Equipment Co., Ltd. | Chuck structure of semiconductor cleaning device and semiconductor cleaning device |
| CN113291814A (en) * | 2021-05-28 | 2021-08-24 | 艾华(无锡)半导体科技有限公司 | Suction disc group for sucking multiple wafers |
| CN113291814B (en) * | 2021-05-28 | 2022-09-16 | 艾华(无锡)半导体科技有限公司 | Suction disc group for sucking multiple wafers |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201738937A (en) | 2017-11-01 |
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Application publication date: 20171027 |