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JP2011146506A5 - - Google Patents

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Publication number
JP2011146506A5
JP2011146506A5 JP2010005749A JP2010005749A JP2011146506A5 JP 2011146506 A5 JP2011146506 A5 JP 2011146506A5 JP 2010005749 A JP2010005749 A JP 2010005749A JP 2010005749 A JP2010005749 A JP 2010005749A JP 2011146506 A5 JP2011146506 A5 JP 2011146506A5
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JP
Japan
Prior art keywords
susceptor
vapor phase
phase growth
growth apparatus
glassy carbon
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Pending
Application number
JP2010005749A
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Japanese (ja)
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JP2011146506A (en
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Priority to JP2010005749A priority Critical patent/JP2011146506A/en
Priority claimed from JP2010005749A external-priority patent/JP2011146506A/en
Publication of JP2011146506A publication Critical patent/JP2011146506A/en
Publication of JP2011146506A5 publication Critical patent/JP2011146506A5/ja
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Description

本発明は、上記の知見に基づくもので、その要旨構成は、次の通りである。
(1) 全面にSiCの被覆層を備えるグラファイトカーボンを基材とするサセプタの表面全面を、ガラス状カーボンで被覆したことを特徴とする、気相成長装置用サセプタ。 This invention is based on said knowledge, The summary structure is as follows.
(1) A susceptor for a vapor phase growth apparatus, characterized in that the entire surface of a susceptor based on graphite carbon having a SiC coating layer on the entire surface is coated with glassy carbon .

(2) SiCを基材とするサセプタの表面全面又は少なくともウェーハ支持部を、ガラス状カーボンで被覆したことを特徴とする、気相成長装置用サセプタ。 (2) A susceptor for a vapor phase growth apparatus, characterized in that the entire surface of a susceptor based on SiC or at least a wafer support is coated with glassy carbon .

Claims (7)

全面にSiCの被覆層を備えるグラファイトカーボンを基材とするサセプタの表面全面を、ガラス状カーボンで被覆したことを特徴とする、気相成長装置用サセプタ。 A susceptor for a vapor phase growth apparatus, characterized in that the entire surface of a susceptor based on graphite carbon having a SiC coating layer on the entire surface is coated with glassy carbon . SiCを基材とするサセプタの表面全面又は少なくともウェーハ支持部を、ガラス状カーボンで被覆したことを特徴とする、気相成長装置用サセプタ。 A susceptor for vapor phase growth apparatus, characterized in that the entire surface of a susceptor based on SiC or at least a wafer support is coated with glassy carbon . ガラス状カーボンのショア硬度が、100〜1500HSであることを特徴とする、請求項1又は2に記載の気相成長装置用サセプタ。   3. The susceptor for vapor phase growth apparatus according to claim 1, wherein the glassy carbon has a Shore hardness of 100 to 1500 HS. 前記ガラス状カーボン膜の厚みが、2〜40μmである、請求項1〜3のいずれか一項に記載の気相成長装置用サセプタ。   The susceptor for a vapor phase growth apparatus according to any one of claims 1 to 3, wherein the glassy carbon film has a thickness of 2 to 40 µm. 前記ウェーハ支持部のウェーハ支持面を、該サセプタのザグリ部の外周側から中心に向かって低くなるように、2°以下の角度で傾斜させたことを特徴とする、請求項1〜4のいずれか一項に記載の気相成長装置用サセプタ。   The wafer support surface of the wafer support portion is inclined at an angle of 2 ° or less so as to become lower toward the center from the outer peripheral side of the counterbore portion of the susceptor. A susceptor for a vapor phase growth apparatus according to claim 1. 前記ウェーハが、直径300mm以上のシリコンウェーハであることを特徴とする、請求項1〜5のいずれか一項に記載の気相成長装置用サセプタ。   6. The susceptor for a vapor phase growth apparatus according to any one of claims 1 to 5, wherein the wafer is a silicon wafer having a diameter of 300 mm or more. 請求項1〜6のいずれか一項に記載の気相成長装置用サセプタを用いた、気相成長装置。   A vapor phase growth apparatus using the susceptor for a vapor phase growth apparatus according to any one of claims 1 to 6.
JP2010005749A 2010-01-14 2010-01-14 Susceptor for vapor phase growth device, and vapor phase growth device Pending JP2011146506A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2010005749A JP2011146506A (en) 2010-01-14 2010-01-14 Susceptor for vapor phase growth device, and vapor phase growth device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010005749A JP2011146506A (en) 2010-01-14 2010-01-14 Susceptor for vapor phase growth device, and vapor phase growth device

Publications (2)

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JP2011146506A JP2011146506A (en) 2011-07-28
JP2011146506A5 true JP2011146506A5 (en) 2013-02-28

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JP2010005749A Pending JP2011146506A (en) 2010-01-14 2010-01-14 Susceptor for vapor phase growth device, and vapor phase growth device

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Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5928133B2 (en) * 2012-04-27 2016-06-01 株式会社Sumco Epitaxial silicon wafer manufacturing method
JP5880974B2 (en) * 2013-02-25 2016-03-09 信越半導体株式会社 Method for detecting contamination of epitaxial growth apparatus and method for manufacturing epitaxial wafer
US9799548B2 (en) * 2013-03-15 2017-10-24 Applied Materials, Inc. Susceptors for enhanced process uniformity and reduced substrate slippage
JP6424726B2 (en) 2015-04-27 2018-11-21 株式会社Sumco Susceptor and epitaxial growth apparatus
TWI615917B (en) * 2015-04-27 2018-02-21 Ｓｕｍｃｏ股份有限公司 Susceptor and epitaxial growth device
WO2018207942A1 (en) * 2017-05-12 2018-11-15 東洋炭素株式会社 Susceptor, method for producing epitaxial substrate, and epitaxial substrate
JP7220845B2 (en) * 2019-04-18 2023-02-13 住友金属鉱山株式会社 Susceptor, susceptor regeneration method, and film formation method

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2938926B2 (en) * 1990-04-13 1999-08-25 東芝セラミツクス株式会社 Silicon carbide member and method of manufacturing the same
JPH092895A (en) * 1995-06-15 1997-01-07 Toshiba Ceramics Co Ltd Susceptor made of glassy carbon
JP2002373930A (en) * 2001-06-14 2002-12-26 Hitachi Chem Co Ltd Susceptor
JP2003324106A (en) * 2002-03-01 2003-11-14 Hitachi Kokusai Electric Inc Heat-treatment apparatus, manufacturing method of semiconductor device, and manufacturing method of substrate
JP4019998B2 (en) * 2003-04-14 2007-12-12 信越半導体株式会社 Susceptor and vapor phase growth apparatus

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