CN107040234A - A kind of highly sensitive both-end is to resonant mode surface acoustic wave detector - Google Patents
A kind of highly sensitive both-end is to resonant mode surface acoustic wave detector Download PDFInfo
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- CN107040234A CN107040234A CN201610075248.3A CN201610075248A CN107040234A CN 107040234 A CN107040234 A CN 107040234A CN 201610075248 A CN201610075248 A CN 201610075248A CN 107040234 A CN107040234 A CN 107040234A
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- reflection grating
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- 238000010897 surface acoustic wave method Methods 0.000 title claims abstract description 30
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 239000002184 metal Substances 0.000 claims description 40
- 230000001360 synchronised effect Effects 0.000 claims description 16
- 238000001465 metallisation Methods 0.000 claims description 9
- 230000004044 response Effects 0.000 claims description 7
- 238000003780 insertion Methods 0.000 claims description 6
- 230000037431 insertion Effects 0.000 claims description 6
- 229910003327 LiNbO3 Inorganic materials 0.000 claims description 4
- 229910012463 LiTaO3 Inorganic materials 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- 239000010453 quartz Substances 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 abstract 2
- 230000035945 sensitivity Effects 0.000 description 6
- 238000001514 detection method Methods 0.000 description 4
- 238000003491 array Methods 0.000 description 3
- 239000012141 concentrate Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- WVLBCYQITXONBZ-UHFFFAOYSA-N trimethyl phosphate Chemical group COP(=O)(OC)OC WVLBCYQITXONBZ-UHFFFAOYSA-N 0.000 description 2
- 230000002457 bidirectional effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N29/00—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
- G01N29/02—Analysing fluids
- G01N29/022—Fluid sensors based on microsensors, e.g. quartz crystal-microbalance [QCM], surface acoustic wave [SAW] devices, tuning forks, cantilevers, flexural plate wave [FPW] devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/24—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive
- H03H9/2405—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive of microelectro-mechanical resonators
- H03H9/2468—Tuning fork resonators
- H03H9/2473—Double-Ended Tuning Fork [DETF] resonators
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2291/00—Indexing codes associated with group G01N29/00
- G01N2291/02—Indexing codes associated with the analysed material
- G01N2291/022—Liquids
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2291/00—Indexing codes associated with group G01N29/00
- G01N2291/04—Wave modes and trajectories
- G01N2291/042—Wave modes
- G01N2291/0423—Surface waves, e.g. Rayleigh waves, Love waves
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
The present invention relates to a kind of both-end to resonant mode surface acoustic wave detector, including being produced on the both-end on substrate (1) to resonator, the second interdigital transducer (3) is provided with substrate (1), in the both sides of the second interdigital transducer (3), the first interdigital transducer (2) and third fork finger transducer (4) are set respectively, second interdigital transducer (3) and the first interdigital transducer (2) formation interval (7), the second interdigital transducer (3) and third fork finger transducer (4) formation interval (8)；The opposite side of first interdigital transducer (2) is provided with the first metallic reflection grating array (5), the opposite side of third fork finger transducer (4) is provided with the second metallic reflection grating array (6)；Wherein, interval (7) is equal with interval (8), and 0-3.5 times of the wavelength for above-mentioned interdigital transducer.
Description
Technical Field
The invention relates to a surface acoustic wave detector, in particular to a high-sensitivity double-end-to-resonance surface acoustic wave detector for a sensor.
Background
A Surface Acoustic Wave (SAW) detector, which is a frequency control element of a SAW oscillator, has a performance that directly affects the frequency stability of the oscillator. According to the frequency stability principle of the surface acoustic wave oscillator, the quality factor (Q value) and the insertion loss of the surface acoustic wave detector directly influence the short-term frequency stability of the oscillator, the higher the Q value and the lower the insertion loss, the higher the short-term frequency stability of the oscillator, and the frequency stability of the surface acoustic wave oscillator directly influences the detection lower limit and the sensitivity of the SAW gas sensor. Generally, the device structure of the surface acoustic wave detector is roughly two types, one is a SAW delay line, and the other is a SAW resonator. For the delay line structure, it is easy to provide a larger area for coating the sensitive film, but the device loss of the structure is larger, and the frequency stability of the oscillator is indirectly influenced; the SAW resonator has the characteristics of high quality factor and low loss, and an oscillator formed by the SAW resonator as a frequency control element is easy to start oscillation, but the resonator is difficult to provide a region required by sensitive film forming, and has great advantages for a sensing terminal without manufacturing a chemical film. The invention relates to a double-end-to-resonance type structure surface acoustic wave detector which is applied to a sensor without manufacturing a chemical film, and is hereinafter referred to as a double-end-to-resonator.
In the double-end-pair resonator, because a resonant structure is adopted, the reflecting grating arrays are arranged at two ends of the transducer to form a resonant cavity, sound waves are limited in the resonant cavity, and the bidirectional loss is extremely low, the very low insertion loss can be obtained, and the frequency stability of the resonator can be improved. However, in order to increase the sensitive area of the resonator, the distance between the interdigital transducers of the resonator is set to be wider (more than ten wavelengths), so that the resonant cavity is longer, and the energy distribution area in the resonant cavity is large and not concentrated enough. When a trace object to be detected is detected, the object to be detected is mainly distributed in the center of a sensitive area of a resonator, and due to the energy distribution characteristic of the conventional long resonant cavity, energy cannot be concentrated in the center of the resonator, so that the sensitivity of the central area is not high enough, and the trace object to be detected is difficult to accurately detect.
Disclosure of Invention
The present invention is directed to solving the above problems of the prior art.
In order to achieve the above object, an embodiment of the present invention provides a two-end-pair resonant surface acoustic wave detector, including a two-end-pair resonator fabricated on a substrate, wherein a second interdigital transducer is disposed on the substrate, a first interdigital transducer and a third interdigital transducer are respectively disposed on two sides of the second interdigital transducer, an interval is formed between the second interdigital transducer and the first interdigital transducer, and an interval is formed between the second interdigital transducer and the third interdigital transducer; and a first metal reflection grating array is arranged on the other side of the first interdigital transducer, and a second metal reflection grating array is arranged on the other side of the third interdigital transducer.
And the synchronous frequency of the first interdigital transducer, the second interdigital transducer and the third interdigital transducer is the same.
The interval formed by the second interdigital transducer and the first interdigital transducer is equal to the interval formed by the second interdigital transducer and the third interdigital transducer, and is 0-3.5 times of the wavelength of the first interdigital transducer, the wavelength of the second interdigital transducer or the wavelength of the third interdigital transducer, wherein the relation of synchronous frequency and wavelength is as follows: where v is the speed of sound in the material, f is the synchronous frequency and λ is the wavelength.
Preferably, the metallization ratios of the first interdigital transducer, the second interdigital transducer, the third interdigital transducer, the first metal reflection grating array and the second metal reflection grating array are equal, and the metallization ratio is 0.1-0.6.
A first metal reflection grating array and a second interdigital transducer form an interval, and a second metal reflection grating array and a third interdigital transducer form an interval; preferably, the first metal reflection grating and the second interdigital transducer form a space equal to the space formed by the second metal reflection grating and the third interdigital transducer, and the space is 0.25-2.5 times the wavelength of the first interdigital transducer, the wavelength of the second interdigital transducer, or the wavelength of the third interdigital transducer.
Preferably, the substrate is 36 ° YX-LiTaO3Substrate, 42 ° YX-LiTaO3Substrate, ST-X quartz substrate, 64-degree YX-LiNbO3Substrate and 41 degree YX-LiNbO3One of the substrates.
Preferably, the synchronization frequency of the first metal reflective grid array and the synchronization frequency of the second metal reflective grid array are the same.
Preferably, the first interdigital transducer, the second interdigital transducer, or the third interdigital transducer has a synchronization frequency 0.95-1.05 times the synchronization frequency of the first metal reflection grating or the second metal reflection grating.
Preferably, the first interdigital transducer, the second interdigital transducer, the third interdigital transducer, the first metal reflection grating and the second metal reflection grating are not weighted.
The energy amplitude difference of two longitudinal modes in the frequency response curve of the surface acoustic wave detector is larger than 10dB, the Q value is larger than 2000, and the insertion loss is smaller than 6 dB.
The double-end-pair resonant surface acoustic wave detector provided by the embodiment of the invention shortens the distance between the interdigital transducers, optimizes the metallization ratio of the interdigital transducers and the metal reflection grating array, shortens the resonant cavity, concentrates the energy of the resonator more and improves the detection sensitivity of the surface acoustic wave detector.
Drawings
Fig. 1 is a schematic structural diagram of a three-transducer structure two-terminal resonator according to an embodiment of the present invention.
Fig. 2 is a frequency response curve for a two-terminal-to-resonator for a three-transducer configuration provided by an embodiment of the present invention.
Fig. 3 is a graph of the frequency response of a two-terminal-to-resonator of a conventional three-transducer configuration.
Fig. 4 shows the test response results of the three-transducer structure two-terminal-to-resonator and the existing three-transducer structure two-terminal-to-resonator provided by the embodiment of the invention, and the test sample is dimethyl methyl phosphate (DMMP).
Detailed Description
The technical solution of the present invention is further described in detail by the accompanying drawings and embodiments. It is to be understood that this example is for illustrative purposes only and is not intended to limit the scope of the present invention.
Fig. 1 is a schematic structural diagram of a three-transducer structure two-terminal resonator according to an embodiment of the present invention. As shown in fig. 1, the two-terminal-to-resonance type surface acoustic wave detector of the present embodiment includes a three-transducer structure two-terminal-to-resonator fabricated on a substrate 1. The two-terminal pair resonator with the three-transducer structure is formed by taking an ST-X quartz plate as a substrate 1(Euler angles are (0 degrees, 132.75 degrees and 0 degrees)), arranging a first conventional interdigital transducer 2, a second interdigital transducer 3 and a third interdigital transducer 4 on the substrate 1 in parallel, and arranging two metal reflection grating arrays (a first metal reflection grating array 5 and a second metal reflection grating array 6) on the substrate 1. The first metal reflection grating array 5 is arranged on the outer side of the first interdigital transducer 2 and is parallel to the first interdigital transducer 2; the second metal reflection grating array 6 is arranged outside the third interdigital transducer 4 and is parallel to the third interdigital transducer 4.
The first interdigital transducer 2, the second interdigital transducer 3, the third interdigital transducer 4, the first metal reflection grating array 5 and the second metal reflection grating array 6 are all not weighted.
The first interdigital transducer 2, the second interdigital transducer 3 and the third interdigital transducer 4 have the same synchronous frequency, the 2 metal reflection grating synchronous frequencies are also the same, and the synchronous frequency of the interdigital transducers is 0.95-1.05 times of the metal reflection grating synchronous frequency (within the range, the relation between the synchronous frequency f and the wavelength lambda is that v is lambda multiplied by f, and v is the sound velocity in the material).
The distance between the first interdigital transducer 2 and the second interdigital transducer 3, that is, the distance 7, and the distance between the second interdigital transducer 3 and the third interdigital transducer 4, that is, the distance 8, are equal to each other, and are 0 to 3.5 times (any range) the wavelength of the first interdigital transducer 2, the wavelength of the second interdigital transducer 3, or the wavelength of the third interdigital transducer 4.
The distance between the first metal reflection grating 5 and the first interdigital transducer 2, that is, the distance 9, is equal to the distance between the second metal reflection grating 6 and the third interdigital transducer 4, that is, the distance 10, and is 0.25 to 2.5 times (any range) the wavelength of the first interdigital transducer 2, the wavelength of the second interdigital transducer 3, or the wavelength of the third interdigital transducer 4.
Since the metallization ratio directly affects the reflection coefficient of the fingers and the spacing between the transducers can change the frequency difference between the two longitudinal modes, in practical operation, the appropriate metallization ratio and the multiples of the two synchronous frequencies, as well as the spacing between adjacent interdigital transducers and the spacing between a reflection grating array and its adjacent interdigital transducers, should be selected according to the substrate material and practical requirements to optimize the resonator performance.
In this embodiment, in order to improve the sensitivity of the central region of the detector and the Q value of the device, obtain low loss, and achieve the largest possible frequency spacing and amplitude difference between the two modes, the cavity needs to be shortened, and the fingers need to have larger reflection coefficients, so that 3 interdigital transducers and 2 metal reflective grating arrays thereof all adopt a metallization ratio of 0.3. The synchronous frequency of the interdigital transducers is 1.003 times of the synchronous frequency of the reflection grating array, and the intervals between the adjacent interdigital transducers are equal, namely the interval 7 and the interval 8 are equal and are 1.5 times of the wavelength of the transducers. The distance between the first reflection grating array 5 and the first interdigital transducer 2 adjacent to the first reflection grating array is equal to the distance between the second reflection grating array 6 and the third interdigital transducer 4 adjacent to the second reflection grating array, and is 1.25 times of the wavelength of the transducers.
Fig. 2 is a frequency response curve for a two-terminal-to-resonator for a three-transducer configuration provided by an embodiment of the present invention.
As shown in fig. 2, the center frequency of the two-terminal pair resonator of the three-transducer structure provided in this embodiment is 512.6MHz, the insertion loss is 3.8dB, and the Q value is 2092.
Fig. 4 shows test response results for a three-transducer structure two-terminal-to-resonator and an existing three-transducer structure two-terminal-to-resonator provided by an embodiment of the present invention.
The double-end-to-resonator with the three-transducer structure and the existing double-end-to-resonator with the three-transducer structure provided by the embodiment of the invention detect the same object to be detected, and the object to be detected is dimethyl methyl phosphate (DMMP). As shown in fig. 4, it can be seen that the detection sensitivity of the two-terminal-to-resonator with the three-transducer structure provided by the embodiment of the present invention is significantly higher than that of the existing two-terminal-to-resonator with the three-transducer structure.
The double-end-pair resonant surface acoustic wave detector provided by the embodiment of the invention shortens the distance between the interdigital transducers, optimizes the metallization ratio of the interdigital transducers and the metal reflection grating array, shortens the resonant cavity, concentrates the energy of the resonator more and improves the detection sensitivity of the surface acoustic wave detector.
The above-mentioned embodiments are intended to illustrate the objects, technical solutions and advantages of the present invention in further detail, and it should be understood that the above-mentioned embodiments are merely exemplary embodiments of the present invention, and are not intended to limit the scope of the present invention, and any modifications, equivalent substitutions, improvements and the like made within the spirit and principle of the present invention should be included in the scope of the present invention.
Claims (7)
1. A double-end-pair resonant surface acoustic wave detector comprises a double-end-pair resonator manufactured on a substrate (1), and is characterized in that a second interdigital transducer (3) is arranged on the substrate (1), a first interdigital transducer (2) and a third interdigital transducer (4) are respectively arranged on two sides of the second interdigital transducer (3), the second interdigital transducer (3) and the first interdigital transducer (2) form a gap (7), and the second interdigital transducer (3) and the third interdigital transducer (4) form a gap (8); a first metal reflection grating array (5) is arranged on the other side of the first interdigital transducer (2), and a second metal reflection grating array (6) is arranged on the other side of the third interdigital transducer (4); wherein,
the synchronous frequencies of the first interdigital transducer (2), the second interdigital transducer (3) and the third interdigital transducer (4) are the same;
the interval (7) is equal to the interval (8) and is 0-3.5 times the wavelength of the first interdigital transducer (2), the second interdigital transducer (3) or the third interdigital transducer (4), wherein the synchronous frequency has a relation with the wavelength: where v is the speed of sound in the material, f is the synchronous frequency and λ is the wavelength.
2. A saw sensor as claimed in claim 1, characterized in that the metallization ratios of the first interdigital transducer (2), the second interdigital transducer (3), the third interdigital transducer (4), the first metal reflection grid array (5), the second metal reflection grid array (6) are equal, the metallization ratio being 0.1-0.6.
3. A saw-surface-wave detector as claimed in claim 1, characterized in that the first metal reflection grating (5) and the second interdigital transducer (3) form a space (9), and the second metal reflection grating (6) and the third interdigital transducer (4) form a space (10);
the interval (9) and the interval (10) are equal and are 0.25-2.5 times of the wavelength of the first interdigital transducer (2), the wavelength of the second interdigital transducer (3) or the wavelength of the third interdigital transducer (4).
4. Surface acoustic wave detector as claimed in claim 1, characterized in that said substrate (1) is 36 ° YX-LiTaO3Substrate, 42 ° YX-LiTaO3Substrate, ST-X quartz substrate, 64-degree YX-LiNbO3Substrate and 41 degree YX-LiNbO3One of the substrates.
5. A surface acoustic wave detector as claimed in claim 1, characterized in that the synchronization frequencies of said first metal reflection grid array (5) and said second metal reflection grid array (6) are the same;
the synchronous frequency of the first interdigital transducer (2), the second interdigital transducer (3) or the third interdigital transducer (4) is 0.95-1.05 times of the synchronous frequency of the first metal reflection grating array (5) or the second metal reflection grating array (6).
6. A saw-surface transducer detector as claimed in claim 1, characterized in that the first interdigital transducer (2), the second interdigital transducer (3), the third interdigital transducer (4), the first metal reflection grating array (5) and the second metal reflection grating array (6) are unweighted.
7. A surface acoustic wave detector as set forth in claims 1-6, characterized in that the difference in energy amplitude of two longitudinal modes in the frequency response curve of said surface acoustic wave detector is > 10dB, Q value > 2000 and insertion loss < 6 dB.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201610075248.3A CN107040234A (en) | 2016-02-03 | 2016-02-03 | A kind of highly sensitive both-end is to resonant mode surface acoustic wave detector |
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| CN201610075248.3A CN107040234A (en) | 2016-02-03 | 2016-02-03 | A kind of highly sensitive both-end is to resonant mode surface acoustic wave detector |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109194302A (en) * | 2018-07-17 | 2019-01-11 | 中国科学院声学研究所 | A kind of three transducer by double-end of surface acoustic wave is to resonator |
| CN109374157A (en) * | 2018-09-14 | 2019-02-22 | 北京遥测技术研究所 | A kind of surface acoustic wave pressure sensor based on loss detection |
| CN110057910A (en) * | 2019-03-08 | 2019-07-26 | 天津大学 | Using the method for removable dual probe piezoelectric transducer measurement film adherability |
| CN111879853A (en) * | 2020-07-16 | 2020-11-03 | 中国科学院声学研究所 | Surface acoustic wave resonant detector of shear wave mode |
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| CN101865884A (en) * | 2009-11-24 | 2010-10-20 | 中国科学院声学研究所 | Single-mode protruding double-end resonant surface acoustic wave detector |
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| CN205647458U (en) * | 2016-02-03 | 2016-10-12 | 中国科学院声学研究所 | High sensitivity's bi -polar is to resonant mode surface acoustic wave detector |
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| US3886504A (en) * | 1974-05-20 | 1975-05-27 | Texas Instruments Inc | Acoustic surface wave resonator devices |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109194302A (en) * | 2018-07-17 | 2019-01-11 | 中国科学院声学研究所 | A kind of three transducer by double-end of surface acoustic wave is to resonator |
| CN109374157A (en) * | 2018-09-14 | 2019-02-22 | 北京遥测技术研究所 | A kind of surface acoustic wave pressure sensor based on loss detection |
| CN110057910A (en) * | 2019-03-08 | 2019-07-26 | 天津大学 | Using the method for removable dual probe piezoelectric transducer measurement film adherability |
| CN110057910B (en) * | 2019-03-08 | 2021-08-17 | 天津大学 | Method for measuring film adhesion by adopting movable double-probe piezoelectric sensor |
| CN111879853A (en) * | 2020-07-16 | 2020-11-03 | 中国科学院声学研究所 | Surface acoustic wave resonant detector of shear wave mode |
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