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CN106896651A - Exposure method - Google Patents

Exposure method Download PDF

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Publication number
CN106896651A
CN106896651A CN201710045631.9A CN201710045631A CN106896651A CN 106896651 A CN106896651 A CN 106896651A CN 201710045631 A CN201710045631 A CN 201710045631A CN 106896651 A CN106896651 A CN 106896651A
Authority
CN
China
Prior art keywords
substrate
light shield
exposure
face
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201710045631.9A
Other languages
Chinese (zh)
Other versions
CN106896651B (en
Inventor
加藤正纪
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nikon Corp
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Publication of CN106896651A publication Critical patent/CN106896651A/en
Application granted granted Critical
Publication of CN106896651B publication Critical patent/CN106896651B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/24—Curved surfaces
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
    • G03F7/2063—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam for the production of exposure masks or reticles
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70141—Illumination system adjustment, e.g. adjustments during exposure or alignment during assembly of illumination system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
    • G03F7/70833—Mounting of optical systems, e.g. mounting of illumination system, projection system or stage systems on base-plate or ground

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Toxicology (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Liquid Crystal (AREA)

Abstract

The present invention provides a kind of exposure method, and the light beam of the pattern from light shield is projected to the view field for being configured with substrate via projection optical system, and the light shield is configured at the illumination region of illumination light, and the exposure method includes：In a side region in the illumination region and the view field, with along by regulation curvature bending into supporting the side in the light shield and the substrate in the way of the first face of cylinder planar；In the opposing party region in the illumination region and the view field, the opposing party in the light shield and the substrate is supported in the way of along the second face of regulation；The side in the light shield and the substrate that first face supported is rotated along first face, the side in the light shield and the substrate that first face supported is moved up in scan exposure side；With on the plane of exposure of the substrate, will include that the light beam of best focus position at two is projected to the view field on the scan exposure direction.

Description

Exposure method
The present patent application is international filing date on May 2nd, 2014, international application no are PCT/JP2014/062180, enter It is 201480033588.9, entitled " substrate board treatment, device manufacturing method to enter the national applications number of National Phase in China The divisional application of the patent application of method and exposure method ".
Technical field
The pattern of light shield is projected at the substrate for exposing the pattern on substrate and on the substrate the present invention relates to a kind of Reason device, device making method and exposure method.
Background technology
There are a kind of device inspection apparatus for manufacturing the various devices such as the display device or semiconductor of liquid crystal display etc..Device Manufacture system has the substrate board treatments such as exposure device.Substrate board treatment will be formed in being configured at the light shield of illumination region The picture of the pattern on (or graticule) is projected to and is configured on substrate of view field etc., and the pattern is exposed on substrate.Base The light shield used in plate processing unit is usually plane, but known is also had in order to continuous to multiple device patterns on substrate Be scanned exposure and be arranged to cylindrical shape light shield (patent document 1).
In addition, as substrate board treatment, there is a kind of projection aligner being recorded in patent document 2.Patent document 2 Described in projection aligner have：Substrate holder, its with make on one-dimensional movement direction the surface of sensitive substrate with by The mode that the optimal imaging face of the pattern image that projection optical system projection is obtained only inclines ormal weight relatively keeps sensitive substrate On substrate objective table；With keeper driver element, it is moved with the interior incline direction along sensitive substrate during scan exposure Dynamic mode, substrate holder is linkedly made in the optical axis of projection optical system with movement of the substrate objective table in one-dimensional square Side move up.Projection aligner utilizes said structure, can change and throw according to the position of the scan exposure of one-dimensional square Penetrate the focus state of the light beam of plane of exposure in sensitive substrate.
Prior art literature
Patent document
Patent document 1：International Publication No. 2008/029917
Patent document 2：No. 2830492 publications of Japanese Patent No.
The content of the invention
As described in patent document 2, focus state is changed by one side, while be exposed, even if because of light The skew of the relativeness of cover and substrate or the skew of optical system etc. cause the light beam that projection optical system is projected with exposure In the case that relation between face changes, it is also possible to be exposed under the focus state comprising best focus position.By This, can suppress the change of the image contrast of exposure on sensitive substrate (photoresist layer).
But, the projection aligner described in patent document 2 makes substrate relative to projection optics using substrate holder Device (projection optical system) is inclined.Therefore, the adjustment (control) of relative position becomes complicated.Particularly, on to substrate In multiple exposure areas (irradiation) each is by light shield and substrate relative scanning and makes the step-scan side that substrate stepping moves In formula, each exposure area on to substrate is required for inclining for Repetitive controller substrate holder at high speed when being scanned exposure The oblique and movement to focus direction, control becomes complicated, and causes to produce vibration.
In addition, in the substrate board treatment of scan exposure mode, if the exposure region on substrate on scan exposure direction The width in domain is small, then the light exposure for giving sensitive substrate also tails off.Accordingly, it would be desirable to increase the exposure area being projected on substrate Exposure light per unit area illumination, or the speed for slowing down scan exposure.If conversely, on increase scan exposure direction The width of the exposure area on substrate, the then quality (transfer repeatability) of the pattern for being formed sometimes can decline.
The purpose of mode of the invention is to provide at a kind of substrate of the substrate that high-quality can be produced with high production rate Reason device, device making method and exposure method.
A kind of first method of the invention, there is provided substrate board treatment, it is to be placed in illumination light with autogamy in future The light beam of pattern of light shield of illumination region be projected to and be configured with the substrate of the projection optical system of the view field of substrate Reason device, the substrate board treatment has：First supporting member, its side in the illumination region and the view field In region, with along by regulation curvature bending into the way of the first face of cylinder planar come in supporting the light shield and the substrate A side；In second supporting member, its opposing party region in the illumination region and the view field, with along regulation The mode in the second face support the opposing party in the light shield and the substrate；And travel mechanism, it makes first supporting Component rotates, and makes the one party in the light shield and the substrate that first supporting member supported on scan exposure direction Mobile, the projection optical system will include optimal at two on the plane of exposure of the substrate on the scan exposure direction The light beam of focal position is projected to the view field.
A kind of second method of the invention, there is provided device making method, it includes：Supplied to the substrate board treatment To the substrate, the pattern of the light shield is formed on the substrate using the substrate board treatment described in first method.
Third Way of the invention, there is provided a kind of exposure method, its autogamy in future is placed in the illumination region of illumination light The light beam of pattern of light shield be projected to the view field for being configured with substrate, the exposure method includes：In the illumination region and In a side region in the view field, with along by regulation curvature bending into supporting in the way of the first face of cylinder planar A side in the light shield and the substrate；In the opposing party region in the illumination region and the view field, with edge The mode in the second face for specifying to support the opposing party in the light shield and the substrate；Make that first face supported is described One party in light shield and the substrate rotates along first face, makes the light shield and the base that first face is supported One party in plate is moved up in scan exposure side；Will be on the scan exposure direction with the plane of exposure of the substrate Light beam including best focus position at two is projected to the view field.
Invention effect
Mode of the invention, by will there is optimum focusing at two on the scan exposure direction of the plane of exposure of substrate The light beam of position is projected to view field, and the substrate of high-quality can be produced with high production rate.
Brief description of the drawings
Fig. 1 is the figure of the structure of the device inspection apparatus for showing first embodiment.
Fig. 2 is the integrally-built figure of the exposure device (substrate board treatment) for showing first embodiment.
Fig. 3 is the figure of the configuration of the illumination region and view field that show the exposure device shown in Fig. 2.
Fig. 4 is the figure of the structure of the lamp optical system and projection optical system for showing the exposure device shown in Fig. 2.
Fig. 5 is the figure of the state for large showing illuminating bundle and projected light beam on light shield.
Fig. 6 A are the explanatory diagram of the projection image planes with the exposure relation of plane of substrate of the pattern for showing light shield.
Fig. 6 B are the charts of the appearance of the change for showing the defocus amount in exposed width.
Fig. 7 is the integrally-built figure of the exposure device (substrate board treatment) for showing second embodiment.
Fig. 8 is the explanatory diagram of the projection image planes with the exposure relation of plane of substrate of the pattern for showing light shield.
Fig. 9 is a chart for example for showing exposure coordinates and the relation for defocusing.
Figure 10 is to show to defocus with point as a chart for example of the relation of intensity.
Figure 11 is the chart of example of the change with the relation of intensity difference for showing defocus amount.
Figure 12 is a chart for example for showing the relation that defocus amount changes with the contrast of L/S.
Figure 13 be show the contrast of defocus amount and L/S than change relation a chart for example.
Figure 14 is an example for showing the CD of defocus amount and L/S and cutting the relation of level (slice level) Chart.
Figure 15 is a chart for example for showing the relation that defocus amount changes with the contrast of isolated line.
Figure 16 be show the contrast of defocus amount and isolated line than change relation a chart for example.
Figure 17 is a chart for example for showing the CD of defocus amount and isolated line and cutting the relation of level.
Figure 18 is the integrally-built figure of the exposure device (substrate board treatment) for showing the 3rd implementation method.
Figure 19 is the integrally-built figure of the exposure device (substrate board treatment) for showing the 4th implementation method.
Figure 20 is the explanatory diagram of the projection image planes with the exposure relation of plane of substrate of the pattern for showing light shield.
Figure 21 is the flow chart for showing exposure method.
Figure 22 is the flow chart for showing device making method.
Specific embodiment
While one side for implementing mode of the invention (implementation method) to being described in detail referring to the drawings.Following Content described in implementation method is not intended to limit the present invention.In addition, including this area in the inscape of following record Technical staff be being readily apparent that or substantially the same key element.And, the inscape below recorded being capable of appropriate group Close.In addition, not departing from the range of idea of the invention, various omissions, replacement or change can be carried out to inscape. For example, in the following embodiments, although the situation to flexible display is manufactured as device is illustrated, but is not limited In this.Also circuit board, semiconductor substrate etc. can be manufactured as device.
[first embodiment]
The substrate board treatment for applying exposure-processed to substrate of first embodiment is exposure device.In addition, exposure dress Put to be assembled in and the substrate after exposure is applied various treatment come in the device inspection apparatus for manufacturing device.First, for device system The system of making is illustrated.
＜ device inspection apparatus ＞
Fig. 1 is the figure of the structure of the device inspection apparatus for showing first embodiment.Device inspection apparatus 1 shown in Fig. 1 It is streamline (flexible display manufacture streamline) of the manufacture as the flexible display of device.As flexible display, for example There is organic el display etc..The device inspection apparatus 1 use so-called volume to volume (Roll to Roll) mode, the volume to volume (Roll to Roll) mode refers to transport the substrate P from by the supply volume FR1 of flexible substrate P wound into rolls, right After the substrate P for transporting is applied continuously in various treatment, furled the substrate P after treatment as flexible device to recovery volume FR2.In the device inspection apparatus 1 of first embodiment, show to transport the base as the sheet material of film-form from supply volume FR1 Plate P, from the supply volume substrate Ps that transport of FR1 sequentially pass through n platforms processing unit U1, U2, U3, U4, U5 ... Un is until being furled To example of the recovery volume FR2.First, the substrate P for the process object as device inspection apparatus 1 is illustrated.
Substrate P uses such as resin film, the paper tinsel (sheet metal) formed by the metals such as stainless steel or alloy etc..As The material of resin film, containing such as polyvinyl resin, acrylic resin, polyester resin, Ethylene Vinyl Ester Copolymers resin, poly- Vinyl chloride resin, celluosic resin, polyamide, polyimide resin, polycarbonate resin, polystyrene resin, acetic acid It is more than the one or two kinds of in vinylester resin.
Substrate P is preferably selected the unobvious big material of such as thermal coefficient of expansion, to cause actually ignore right Because of the caused deflection that is heated in the various treatment that substrate P applies.Thermal coefficient of expansion can for example be mixed by by inorganic filler It is smaller than threshold value corresponding with technological temperature etc. together in being set in resin film.Inorganic filler for example can be titanium oxide, Zinc oxide, aluminum oxide, silica etc..In addition, substrate P can be by pole that the thickness of the manufactures such as float technique is 100 μm or so The individual layers of thin glass, or the layered product above-mentioned resin film, paper tinsel etc. pasted on the very thin glass and is formed.
The substrate P for constituting by this way is formed by being wound into web-like and rolls up FR1 for the supply, supply volume FR1 It is installed in device inspection apparatus 1.The device inspection apparatus 1 pair for being provided with supply volume FR1 roll up what FR1 was transported from supply Substrate P repeats for manufacturing a various treatment for device.Therefore, the substrate P after treatment is changed into multiple devices and is connected State.That is, the substrate P for being transported from supply volume FR1 is changed into the substrate of layout.Additionally, substrate P can be beforehand through regulation Pre-treatment its surfaction is made into its surface activation, or, by stamped method (minute-pressure mould) etc. surface be formed with for Small next door construction (sag and swell) of precise pattern.
Substrate P after treatment is rolled up FR2 and is recovered by being wound into web-like as recovery.Recovery volume FR2 is pacified Loaded on cutter sweep (not shown).Substrate P of the cutter sweep of recovery volume FR2 after by treatment is installed by each device Part is split (cutting) to form multiple devices.For the size of substrate P, such as width (as the direction of short side) Size be 10cm~2m or so, the size of length direction (as the direction on side long) is more than 10m.Additionally, the size of substrate P It is not limited to above-mentioned size.
Hereinafter, reference picture 1 is illustrated to device inspection apparatus 1.In Fig. 1 using X-direction, Y-direction and Z-direction just The orthogonal coordinate system of friendship.X-direction is to link the direction that FR1 and recovery volume FR2 are rolled up in supply in the horizontal plane, in being Fig. 1 Left and right directions.Y-direction is direction orthogonal with X-direction in the horizontal plane, is the fore-and-aft direction in Fig. 1.Y-direction is used as supply With volume FR1 and the axial direction of recovery volume FR2.Z-direction is vertical, is the above-below direction in Fig. 1.
Device inspection apparatus 1 have substrate feeding device 2, the substrate to being supplied by substrate feeding device 2 of supplying substrate P P applies the processing unit U1~Un of various treatment, returns the substrate that the substrate P for applying treatment by processing unit U1~Un is reclaimed The host control device 5 that receiving apparatus 4, each device to device inspection apparatus 1 are controlled.
Supply volume FR1 is rotatably installed in substrate feeding device 2.Substrate feeding device 2 have from The supply volume FR1 for being installed transports the driven roller R1 of substrate P, the position on width (Y-direction) of adjustment substrate P Marginal position controller EPC1.Driven roller R1 clamps the table back of the body two sides of substrate P while rotating, and substrate P is used along from supply Volume FR1 is transported towards the carrying direction of recovery volume FR2, thus supplies to processing unit U1~Un substrate P.Now, edge Positioner EPC1 is so that substrate P falls ± ten in the position at end (edge) place of width relative to target location Mode in the range of several μm~tens μm or so makes substrate P move in the direction of the width, to correct substrate P in the direction of the width Position.
Recovery volume FR2 is rotatably installed in substrate retracting device 4.Substrate retracting device 4 has will Substrate P after treatment is pulled to the position on width (Y-direction) of the driven roller R2 of recovery volume FR2 sides, adjustment substrate P The marginal position controller EPC2 for putting.Substrate retracting device 4 carries on the back two sides while revolving using the table that driven roller R2 clamps substrate P Turn, to carrying direction pull substrate P, and recovery is rolled up FR2 rotations, thus roll substrate P.Now, marginal position control Device EPC2 processed is constituted in the same manner as marginal position controller EPC1, amendment substrate P position in the direction of the width, to avoid substrate End (edge) on the width of P produces deviation in width.
Processing unit U1 is the painting that photonasty functional liquid is applied on the surface of the substrate P supplied from substrate feeding device 2 Coating apparatus.As photonasty functional liquid, using such as photoresist, photonasty silane coupler (hydrophilic and hydrophobic modification agent), Photonasty plating reducing agent, UV curable resin solutions etc..Processing unit U1 sets successively from the upstream side in the carrying direction of substrate P There is applying mechanism Gp1 and drier Gp2.Applying mechanism Gp1 has the roller platen DR1 and roller platen DR1 for being wound with substrate P Relative application roll DR2.Applying mechanism Gp1 is wound in the state of roller platen DR1 in the substrate P that will be supplied, using impressing Roller DR1 and application roll DR2 clamping substrate Ps.Then, applying mechanism Gp1 is rotated by making roller platen DR1 and application roll DR2, While substrate P is moved along direction is carried, while using application roll DR2 coating photonasty functional liquids.Drier Gp2 is by blowing Go out the drying air such as hot blast or dry air, to remove the solute contained in photonasty functional liquid (solvent or water), make The substrate P for being coated with photonasty functional liquid is dried, and photonasty functional layer is formed in substrate P.
Processing unit U2 is in order that the photonasty functional layer for being formed at the surface of substrate P stably will be from processing unit U1 carries the heater that the substrate P come is heated to set point of temperature (for example, several 10~120 DEG C or so).Processing unit U2 is from base The upstream side in the carrying direction of plate P is sequentially provided with heating chamber HA1 and cooling chamber HA2.It is provided with the inside of heating chamber HA1 Multiple rollers and multiple air turning-bar (air turn bar), multiple rollers and multiple air turning-bars constitute removing for substrate P Fortune path.Multiple rollers are set to be in rolling contact with the back side of substrate P, and multiple air turning-bars are arranged to surface not with substrate P The state of side contacts.In order to extend the transport path of substrate P, multiple rollers and multiple air turning-bars are forming removing for the shape that crawls The mode for transporting path is configured.By the substrate P in heating chamber HA1 while being carried by the transport path along the shape that crawls, on one side It is heated to set point of temperature.In order that in the temperature and subsequent handling (processing unit U3) of the substrate P of heating chamber HA1 heating Environment temperature is consistent, and substrate P is cooled to environment temperature by cooling chamber HA2.Multiple is provided with the inside of cooling chamber HA2 Roller, in the same manner as heating chamber HA1, in order to extend the transport path of substrate P, multiple rollers are forming the transport path of the shape that crawls Mode is configured.By the substrate P in cooling chamber HA2 while being carried by the transport path along the shape that crawls, while cooled. Downstream on the carrying direction of cooling chamber HA2 is provided with driven roller R3, driven roller R3 while clamping is by cooling chamber HA2's Substrate P is while rotation, thus supplies substrate P towards processing unit U3.Additionally, heating chamber HA1 to the heating of substrate P in base In the case that plate P is the resin films such as PET (fat of poly terephthalic acid second two) or PEN (PEN), most It is good to be set as no more than its glass transition temperature.
Processing unit (substrate board treatment) U3 is directed to the surface supplied from processing unit U2 and is formed with photosensitive sexual function The exposure device of the pattern such as the circuit of substrate (sensitive substrate) P projection exposure displays of layer or wiring.Details exists It is hereinafter described, processing unit U3 irradiates illuminating bundle by the light shield M of reflection-type, and illuminating bundle is obtained by light shield M reflection To projected light beam projection exposure in substrate P.Processing unit U3 is with the downstream transport to carrying direction from processing unit The driven roller R4 of the substrate P of U2 supplies, the marginal position controller of the position on width (Y-direction) of adjustment substrate P EPC3.Driven roller R4 clamps the table back of the body two sides of substrate P while rotating, and substrate P is transported to the downstream for carrying direction, by This is supplied to substrate supporting cylinder (otherwise referred to as rotating cylinder) in exposure position supporting substrates P.
Marginal position controller EPC3 is constituted in the same manner as marginal position controller EPC1, and amendment substrate P is in width On position so that the width in the substrate P of exposure position (substrate supporting cylinder) turns into target location.In addition, treatment dress In the state of U3 is put with the substrate P imparting slackness after to exposure, two groups of substrate P are transported to the downstream for carrying direction Driven roller R5, R6.Driven roller R5 is cooperated with driven roller R4 before, and the tension force of regulation is assigned on the carrying direction of substrate P.Two Group driven roller R5, R6 is configured in the way of being separated by the interval of regulation on the carrying direction of substrate P.Driven roller R5 holds carrying Substrate P upstream side and rotate, driven roller R6 holds the downstream of the substrate P of carrying and rotates, and thus supplies substrate P To processing unit U4.Now, because substrate P is endowed slackness, it is possible to absorb than driven roller R6 more by carrying direction Downstream the variation of transporting velocity that produces of position, the exposure to substrate P caused by the variation because of transporting velocity can be broken off The influence of light treatment.In addition, in order that the picture of a part for the mask pattern of light shield M relatively aligned with substrate P it is (right It is accurate), aligming microscope AM1, AM2 of the alignment mark that detection is previously formed in substrate P etc. are provided with processing unit U3.
Processing unit U4 is to carry out the development treatment of wet type, nothing to carrying the substrate P after the exposure for coming from processing unit U3 The wet type processing device of electrolysis electroplating processes etc..Have in the inside of processing unit U4：Along vertical (Z-direction) stratification 3 treatment troughs BT1, BT2, BT3 and carrying substrate P multiple rollers.Multiple rollers are forming substrate P successively from 3 treatment troughs The inside of BT1, BT2, BT3 transport path by way of configure.Downstream on the carrying direction for the treatment of trough BT3 is provided with Driven roller R7, driven roller R7 are clamped by the substrate P after treatment trough BT3 while rotate, and thus substrate P is filled towards treatment Put U5 supplies.
Although omitting diagram, processing unit U5 is to doing that the substrate P come from processing unit U4 carryings is dried Dry device.Processing unit U5 removes the drop or mist for being applied in processing unit U4 and having been adhered in the substrate P of wet processed, And the moisture of substrate P is adjusted to the moisture of regulation.By the dry substrate Ps of processing unit U5 by several Reason device is carried to processing unit Un.Then, after processing unit Un is processed, substrate P is rolled up to substrate and reclaims dress Put 4 recovery volume FR2.
Host control device 5 plan as a whole control base board feedway 2, substrate retracting device 4 and multiple processing unit U1~ Un.The control base board feedway 2 of host control device 5 and substrate retracting device 4, reclaim from substrate feeding device 2 to substrate The carrying substrate P of device 4.In addition, host control device 5 synchronously controls multiple processing unit U1~Un with the carrying of substrate P, it is right Substrate P carries out various treatment.
＜ exposure devices (substrate board treatment) ＞
Hereinafter, 2~Fig. 4 of reference picture, to exposure device (the processing substrate dress of the processing unit U3 as first embodiment Put) structure illustrate.Fig. 2 be show first embodiment exposure device (substrate board treatment) it is integrally-built Figure.Fig. 3 is the figure of the configuration of the illumination region and view field that show the exposure device shown in Fig. 2.Fig. 4 is to show Fig. 2 institutes The figure of the lamp optical system of the exposure device for showing and the structure of projection optical system.Hereinafter, processing unit U3 is referred to as exposing Electro-optical device U3.
Exposure device U3 shown in Fig. 2 is so-called scanning-exposure apparatus, and direction carrying substrate P is carried at an edge, on one side Will be formed in cylindrical shape light shield M outer peripheral face mask pattern picture projection exposure on the surface of substrate P.Additionally, in Fig. 2 Middle use X-direction, Y-direction and the orthogonal orthogonal coordinate system of Z-direction, using the orthogonal coordinate system same with Fig. 1.
First, the light shield M used in exposure device U3 is illustrated.Light shield M is for example to use metal cylinder Reflection-type light shield.Light shield M is formed as the cylinder with outer peripheral face (periphery), and diametrically has fixed thickness Degree, the outer peripheral face (periphery) has the radius of curvature R m centered on the first axle AX1 extended along Y-direction.The circumference of light shield M Face is the face P1 of the mask pattern for being formed with regulation.The face P1 of light shield M has：With height from high efficiency to prescribed direction the reflected beams Reflecting part and the reflection suppression portion reflected not to prescribed direction the reflected beams or with poor efficiency.Mask pattern is by high reflection What portion and reflection suppression portion were formed.Herein, as long as reflection suppression portion reduces the light reflected to prescribed direction.Therefore, Reflection suppression portion can absorb light, transmitted light or to the direction reflected light (such as diffusing reflection) in addition to prescribed direction.This Place, can utilize the reflection suppression portion of the material composition light shield M of light absorbing material or transmitted light.Exposure device U3 can make With by metal cylinder make light shield as said structure light shield M.Therefore, exposure device U3 can use the light of low price Cover is exposed.
Additionally, light shield M could be formed with the entirety or a part of the panel pattern corresponding with display device, The panel pattern corresponding with multiple display devices can also be formed with.In addition, light shield M can be around first axle AX1's Multiple panel patterns are repeatedly formed in circumference, it is also possible to be repeatedly formed multiple on the direction parallel with first axle AX1 Small-sized panel pattern.And, light shield M can also be formed with panel pattern and size of the first display device etc. with The panel pattern of the different second display part of one display device.As long as in addition, light shield M has centered on first axle AX1 Radius of curvature for Rm periphery, be not limited to the shape of cylinder.For example, light shield M can also be with circumference The sheet material of the arc-shaped in face.In addition, light shield M can also be laminal, can be with so that circle be copied in laminal light shield M bendings The mode of side face is pasted onto on cylinder element.
Then, the exposure device U3 shown in Fig. 2 is illustrated.Exposure device U3 is at above-mentioned driven roller R4~R6, edge On the basis of positioner EPC3 and aligming microscope AM1, AM2, also have：Light shield maintaining body 11, substrate supporting machine Structure 12, lamp optical system IL, projection optical system PL, slave control device 16.Exposure device U3 is by using light optics The illumination light that system IL, projection optical system PL guiding are projected from light supply apparatus 13, by what is kept by light shield maintaining body 11 The light beam of the pattern of light shield M is projected to the substrate P kept by base supporting mechanism 12.
The each several part of the control exposure device of slave control device 16 U3, is processed each several part.Slave control device 16 Can be device inspection apparatus 1 host control device 5 it is some or all.In addition, slave control device 16 can also Controlled by host control device 5, be other devices different from host control device 5.Slave control device 16 for example has meter Calculation machine.
Light shield maintaining body 11 has：Keep the light shield holding cylinder (light shield holding member) 21 of light shield M, make light shield holding cylinder First drive division 22 of 21 rotations.Light shield holding cylinder 21 keeps light shield in the way of the first axle AX1 of light shield M is as pivot M.First drive division 22 is connected with slave control device 16, and revolves light shield holding cylinder 21 with first axle AX1 as pivot Turn.
Additionally, light shield maintaining body 11 keeps the light shield M of cylinder using light shield holding cylinder 21, but it is not limited to the knot Structure.Light shield maintaining body 11 can also copy the outer peripheral face of light shield holding cylinder 21 to wind and keep laminal light shield M.Separately Outward, can also be maintained at the light shield M of the sheet material in arc-shaped on the outer peripheral face of light shield holding cylinder 21 by light shield maintaining body 11.
Base supporting mechanism 12 has the outer peripheral face supporting substrates P using cylindrical shape and the substrate supporting cylinder that can be rotated 25th, the second drive division 26, a pair of air turning-bar ATB1, ATB2 and a pair of deflector rolls 27,28 of the rotation of substrate supporting cylinder 25 are made. Substrate supporting cylinder 25 is formed as the drum with outer peripheral face (periphery), and the outer peripheral face (periphery) has with the Y direction Radius of curvature R p centered on second axle AX2 of upper extension.Herein, first axle AX1 and the second axle AX2 is parallel to each other, with from Face CL centered on the face that one axle AX1 and the second axle AX2 pass through.A part for the periphery of substrate supporting cylinder 25 turns into supporting base The bearing-surface P2 of plate P.That is, substrate supporting cylinder 25 is wound on its bearing-surface P2 come supporting substrates P by by substrate P.Second drives Dynamic portion 26 is connected with slave control device 16, rotates substrate supporting cylinder 25 with the second axle AX2 as pivot.
A pair of air turning-bar ATB1, ATB2 are respectively arranged on the upper of the carrying direction of substrate P across substrate supporting cylinder 25 Trip side and downstream.A pair of air turning-bars ATB1, ATB2 are located at the face side of substrate P, and are configured at vertical (Z side To) on ratio substrate supporting cylinder 25 bearing-surface P2 sides on the lower position.A pair of deflector rolls 27,28 are across a pair of air turning-bars ATB1, ATB2 and be respectively arranged on substrate P carrying direction upstream side and downstream.One in a pair of deflector rolls 27,28 is led Roller 27 will be carried the substrate P come from driven roller R4 and be guided to air turning-bar ATB1, and another deflector roll deflector roll 28 will turn from air The substrate P come is carried to bar ATB2 to guide to driven roller R5.
Therefore, base supporting mechanism 12 using deflector roll 27 by from driven roller R4 carry come substrate P guide to air steering Bar ATB1, and substrate supporting cylinder 25 will be imported by the substrate P of air turning-bar ATB1.Base supporting mechanism 12 is by using Two drive divisions 26 rotate substrate supporting cylinder 25, come while the bearing-surface P2 supportings using substrate supporting cylinder 25 are directed into substrate branch The substrate P of cylinder 25 is held, while carrying the substrate P to air turning-bar ATB2.Base supporting mechanism 12 utilizes air turning-bar The substrate P that ATB2 will be carried to aerial turning-bar ATB2 is guided to deflector roll 28, and will be guided to driving by the substrate P of deflector roll 28 Roller R5.
Now, the slave control device 16 being connected with the first drive division 22 and the second drive division 26 is kept by making light shield Cylinder 21 and substrate supporting cylinder 25, than synchronous rotary, will be formed in the mask pattern of the face P1 of light shield M with the rotary speed of regulation As continuously repeat projection exposure the substrate P of the bearing-surface P2 for being wound in substrate supporting cylinder 25 surface (copy periphery and The face of bending) on.
Light supply apparatus 13 projects the illuminating bundle EL1 being illuminated to light shield M.Light supply apparatus 13 has light source 31 and leaded light Component 32.Light source 31 is the light source of the light of the wavelength for projecting regulation.Light source 31 is, for example, lamp source or the laser two such as mercury vapor lamp Pole pipe, light emitting diode (LED) pipe etc..The illumination light that light source 31 is projected is, for example, bright line (g lines, h lines, the i projected from lamp source Line), extreme ultraviolet light (DUV light), ArF PRKs (wavelength 193nm) such as KrF PRKs (wavelength 248nm) etc..This Place, the preferred illuminating bundle EL1 for projecting the light containing i lines (wavelength of 365nm) following wavelength of light source 31.Light source 31 can be used From YAG laser (third harmonic laser) project laser (wavelength of 355nm), from YAG laser (four-time harmonic laser) project Laser (wavelength of 266nm) or the laser (wavelength of 248nm) from the injection of KrF PRKs etc. are used as the ripple below i lines The illuminating bundle EL1 of light long.
The illuminating bundle EL1 that light conducting member 32 will be projected from light source 31 is conducted to lamp optical system IL.Light conducting member 32 Relaying module by optical fiber or using speculum etc. is constituted.In addition, light conducting member 32 is being provided with multiple lamp optical system IL In the case of, the illuminating bundle EL1 from light source 31 is separated into multi beam, multi beam illuminating bundle EL1 is conducted to multiple and is illuminated Optical system IL.The illuminating bundle EL1 that light conducting member 32 will be projected from light source 31 is incident to as the light of the polarization state of regulation Polarising beam splitter PBS.Herein, the polarising beam splitter PBS of present embodiment makes the light of the rectilinearly polarized light as S-polarization light Beam reflects, and makes to be transmitted as the light beam of the rectilinearly polarized light of P polarization light.Therefore, light supply apparatus 13 is projected to polarising beam splitter PBS incident illuminating bundle EL1 is changed into the illuminating bundle EL1 of the light beam of rectilinearly polarized light (S-polarization light).
Light supply apparatus 13 projects wavelength and the consistent polarization laser of phase to polarising beam splitter PBS.For example, light source is filled 13 are put in the case where the light beam projected from light source 31 is the light of polarization, using polarization-maintaining fiber as light conducting member 32 in dimension Hold carries out leaded light under the polarization state of the laser of the output of light supply apparatus 13.In addition, for example, it is also possible to using fiber guides from light The light beam of the output of source 31, makes to produce polarization from the light of optical fiber output using polarizer.That is light of the light supply apparatus 13 in random polarization In the case that beam is directed, it is possible to use polarizer makes the light beam polarization of random polarization, it is also possible to using polarising beam splitter PBS The light beam of random polarization is divided into each light beam of P polarization light and S-polarization light, make the light conduct of transmission polarising beam splitter PBS It is incident to a light beam of the lamp optical system IL of system to use, makes by the light of polarising beam splitter PBS as entering The light beam for being incident upon the lamp optical system IL of other systems is used.Other light supply apparatus 13 can also be by using lens etc. Relay optical system come guide from light source 31 output light beam.
Herein, as shown in figure 3, the exposure device U3 of first embodiment assumes that the exposure dress of so-called poly-lens mode Put.Additionally, figure shows in figure 3, the illumination region IR on light shield M that the light shield holding cylinder 21 observed from-Z sides is kept Upward view (left figure of Fig. 3), view field PA in the substrate P that is supported of the substrate supporting cylinder 25 observed from+Z sides bows View (right figure of Fig. 3).The reference X of Fig. 3SMoving direction (the rotation of light shield holding cylinder 21 and substrate supporting cylinder 25 is shown Turn direction).The exposure device U3 of poly-lens mode is to multiple (the being, for example, in the first embodiment 6) illumination on light shield M Region IR1~IR6 irradiates illuminating bundle EL1 respectively, and each illuminating bundle EL1 is reflected in each illumination region IR1~IR6 Multiple (in the first embodiment be, for example, 6) view field in substrate P of multiple projected light beam EL2 projection exposures PA1~PA6.
First, the multiple illumination region IR1~IR6 illuminated using lamp optical system IL are illustrated.Such as Fig. 3 institutes Show, multiple illumination region IR1~IR6 configure the first lighting area across median plane CL on the light shield M of the upstream side of direction of rotation Domain IR1, the 3rd illumination region IR3 and the 5th illumination region IR5, second is configured on the light shield M in the downstream of direction of rotation Illumination region IR2, the 4th illumination region IR4 and the 6th illumination region IR6.Each illumination region IR1~IR6 be in have along Parallel short side and the elongated trapezoidal region on side long that the axial direction (Y-direction) of light shield M extends.Now, trapezoidal each illumination Region IR1~IR6 is the region that its short side is located at outside positioned at median plane CL sides and its side long.First illumination region IR1, the 3rd Illumination region IR3 and the 5th illumination region IR5 are separated by the interval of regulation and configure in the axial direction.In addition, the second illumination region IR2, the 4th illumination region IR4 and the 6th illumination region IR6 are separated by the interval of regulation and configure in the axial direction.Now, second Illumination region IR2 is configured between the first illumination region IR1 and the 3rd illumination region IR3 in the axial direction.Similarly, the 3rd illumination Region IR3 is configured between the second illumination region IR2 and the 4th illumination region IR4 in the axial direction.4th illumination region IR4 is in axle Configuration is between the 3rd illumination region IR3 and the 5th illumination region IR5 upwards.5th illumination region IR5 is configured in the axial direction Between 4th illumination region IR4 and the 6th illumination region IR6.Each illumination region IR1~IR6 is with when the circumferential observation of light shield M Mode (overlap) configuration that the triangular part in the hypotenuse portion of adjacent trapezoidal illumination region overlaps.Additionally, in first embodiment In, each illumination region IR1~IR6 is region of the trapezoidal region but it is also possible to be oblong-shaped.
In addition, light shield M has and being formed with the pattern forming region A3 of mask pattern and not forming the non-pattern of mask pattern Forming region A4.Non- pattern forming region A4 is the region for being difficult reflection for absorbing illuminating bundle EL1, be configured to frame-shaped around Pattern forming region A3.First~the 6th illumination region IR1~IR6 is configured to cover the whole of the Y-direction of pattern forming region A3 Individual width.
Lamp optical system IL and multiple illumination region IR1~IR6 are correspondingly provided with multiple (examples in the first embodiment 6 in this way).Injected respectively from light supply apparatus 13 in multiple lamp optical system (segmentation lamp optical system) IL1~IL6 Illuminating bundle EL1.Each lamp optical system IL1~IL6 respectively by from each illuminating bundle EL1 of the incidence of light supply apparatus 13 conduct to Each illumination region IR1~IR6.That is, the first lamp optical system IL1 conducts to the first illumination region IR1 illuminating bundle EL1, Similarly, the second~the 6th lamp optical system IL2~IL6 conducts to the second~the 6th illumination region IR2 illuminating bundle EL1 ~IR6.Multiple lamp optical system IL1~IL6 across median plane CL, be configured with first, the three, the 5th illumination region IR1, The side (left side of Fig. 2) of IR3, IR5 configures the first lamp optical system IL1, the 3rd lamp optical system IL3 and the 5th photograph Bright optical system IL5.First lamp optical system IL1, the 3rd lamp optical system IL3 and the 5th lamp optical system IL5 It is separated by the interval of regulation in the Y direction and configures.In addition, multiple lamp optical system IL1~IL6 are matching somebody with somebody across median plane CL It is equipped with second, the four, the 6th illumination regions IR2, IR4, the side (right side of Fig. 2) of IR6 configures the second lamp optical system IL2, the 4th lamp optical system IL4 and the 6th lamp optical system IL6.Second lamp optical system IL2, the 4th illumination light System IL4 and the 6th lamp optical system IL6 are separated by the interval of regulation and configure in the Y direction.Now, the second illumination light System IL2 is configured between the first lamp optical system IL1 and the 3rd lamp optical system IL3 in the axial direction.Similarly, Three lamp optical system IL3, the 4th lamp optical system IL4, the 5th lamp optical system IL5 are configured shone second in the axial direction Between bright optical system IL2 and the 4th lamp optical system IL4, the 3rd lamp optical system IL3 and the 5th lamp optical system Between IL5, between the 4th lamp optical system IL4 and the 6th lamp optical system IL6.In addition, the first lamp optical system IL1, the 3rd lamp optical system IL3 and the 5th lamp optical system IL5 and the second lamp optical system IL2, the 4th illumination Optical system IL4 and the 6th lamp optical system IL6 are configured to when being observed from Y-direction be symmetrical.
Then, reference picture 4, the detailed construction to each lamp optical system IL1~IL6 is illustrated.Further, since each shine Bright optical system IL1~IL6 is same structure, so with the first lamp optical system IL1 (hereinafter simply referred to as light opticses System IL) as a example by illustrate.
In order to irradiate illumination region IR (the first illumination region IR1) with uniform illumination, lamp optical system IL applies Ke (Kohler) illumination is strangled, the illuminating bundle EL1 from light supply apparatus 13 is converted to multiple spot light aggregations by Kohler illumination method Into the area source picture of planar.In addition, lamp optical system IL is to fall to penetrating illuminator using polarising beam splitter PBS.Illumination Optical system IL has light optics module ILM, polarised light successively from the light incident side of the illuminating bundle EL1 from light supply apparatus 13 Beam splitter PBS and quarter wave plate 41.
As shown in figure 4, light optics module ILM includes collimation lens 51, compound eye successively from the light incident side of illuminating bundle EL1 Lens 52, multiple collector lens 53, cylindrical lens 54, illuminated field diaphragm 55 and multiple relay lens 56, and it is arranged on the On one optical axis BX1.Emitting side of the collimation lens 51 located at the light conducting member 32 of light supply apparatus 13.The optical axis configuration of collimation lens 51 In on primary optic axis BX1.The face entirety of the light incident side of the irradiation fly's-eye lens 52 of collimation lens 51.Fly's-eye lens 52 is saturating located at collimation The emitting side of mirror 51.The center configuration in the face of the emitting side of fly's-eye lens 52 is on primary optic axis BX1.Fly's-eye lens 52 will come from The illuminating bundle EL1 of collimation lens 51 is divided into multiple spot lights, the light from each spot light is overlapped and is incident to described later Collector lens 53.
Now, generation spot light picture fly's-eye lens 52 emitting side face by from fly's-eye lens 52 via illumination field of view Diaphragm 55 is configured to anti-with the first concave mirror 72 to the various lens of first concave mirror 72 of projection optical system PL described later Pupil plane where penetrating face reaches optical conjugate.Located at the emitting side of fly's-eye lens 52, its optical axis is configured at the to collector lens 53 On one optical axis BX1.Collector lens 53 irradiates the light (illuminating bundle EL1) of each spot light from fly's-eye lens 52, makes illumination light Beam EL1 is overlapped via cylindrical lens 54 on illuminated field diaphragm 55.In the case of no cylindrical lens 54, reach illumination and regard The chief ray of the illuminating bundle EL1 of each point on field diaphragm 55 is parallel with primary optic axis BX1.But, by cylindrical lens 54 Effect so that be changed into mutual in each chief ray Y-direction in fig. 4 of the illuminating bundle EL1 of irradiation illuminated field diaphragm 55 The telecentricity state of parallel (also parallel with primary optic axis BX1), is changed into the gradient root relative to primary optic axis BX1 in XZ planes The non-telecentricity state different successively according to image height position.
Cylindrical lens 54 is that in plane, emitting side, in the piano convex cylindrical lens of convex barrel surface, is set to and illumination light incident side The light incident side of field stop 55 is mutually adjacent.The optical axis of cylindrical lens 54 is configured on primary optic axis BX1, the injection of cylindrical lens 54 The bus of the convex barrel surface of side is set to parallel with the Y-axis in Fig. 4.Thus, just by the illuminating bundle EL1 after cylindrical lens 54 Each chief ray it is mutually parallel with primary optic axis BX1 in the Y direction, it is (tight to certain point on primary optic axis BX1 in XZ planes Say lattice, be in the line that in the Y direction extends orthogonal with primary optic axis BX1) convergence.
The opening portion of illuminated field diaphragm 55 is formed as trapezoidal (rectangle) of shape same with illumination region IR, illumination field of view The center configuration of the opening portion of diaphragm 55 is on primary optic axis BX1.Now, illuminated field diaphragm 55 is utilized from illuminated field diaphragm Relay lens (imaging system) 56, polarising beam splitter PBS, quarter wave plate 41 between 55 to light shield M cylindric face P1 Deng being configured at the face with the illumination region IR optical conjugates on light shield M.Injection of the relay lens 56 located at illuminated field diaphragm 55 Side.The optical axis of relay lens 56 is configured on primary optic axis BX1.Relay lens 56 is via polarising beam splitter PBS and quarter wave plate 41 will expose to the cylindric face P1 (illumination regions of light shield M by the illuminating bundle EL1 of the opening portion of illuminated field diaphragm 55 IR)。
Polarising beam splitter PBS is configured between light optics module ILM and median plane CL.Polarising beam splitter PBS exists Division of wave front face makes to be reflected as the light beam of the rectilinearly polarized light of S-polarization light, makes the light of the rectilinearly polarized light as P polarization light Beam is transmitted.Herein, it is the light beam of the rectilinearly polarized light of S-polarization light to be incident to the illuminating bundle EL1 of polarising beam splitter PBS, is entered The reflected light (projected light beam EL2) from light shield M for being incident upon polarising beam splitter PBS is changed into P polarization light by quarter wave plate 41 The light beam of rectilinearly polarized light.
Thus, polarising beam splitter PBS makes to be incident to the illuminating bundle in division of wave front face from light optics module ILM EL1 reflects, and on the other hand, makes by light shield M reflection and be incident to the projected light beam EL2 transmissions in division of wave front face.Polarised light point Beam device PBS preferably makes to be incident to whole reflections of the illuminating bundle EL1 in division of wave front face, but can also make to be incident to ripple battle array Most of reflection of the illuminating bundle EL1 of face divisional plane, and a part is transmitted or is absorbed using division of wave front face.Equally Ground, polarising beam splitter PBS preferably makes to be incident to whole transmissions of the projected light beam EL2 in division of wave front face, but can also Make most of transmission of the projected light beam EL2 for being incident to division of wave front face, and a part is reflected or is absorbed.
Quarter wave plate 41 is configured between polarising beam splitter PBS and light shield M, by by the photograph of polarising beam splitter PBS Mingguang City beam EL1 is converted to circularly polarized light from rectilinearly polarized light (S-polarization light).The illuminating bundle EL1 of circularly polarized light is converted to light Cover M irradiations.Quarter wave plate 41 will be converted to rectilinearly polarized light (P polarization by the projected light beam EL2 of the circularly polarized light of light shield M reflection Light).
Herein, lamp optical system IL is so that by the projected light beam EL2's of the illumination region IR reflections on the face P1 of light shield M Chief ray in the Y direction with XZ planes in any one of be in the mode of telecentricity state, irradiated to the illumination region IR of light shield M Illuminating bundle EL1.Reference picture 5 illustrates this state.
Fig. 5 is that the lighting area exposed on light shield M is greatly exaggerated to show in XZ planes (plane vertical with first axle AX1) The figure of the state of the projected light beam EL2 of illuminating bundle EL1 and illuminable area the IR reflection of domain IR.As shown in figure 5, above-mentioned illumination Optical system IL is so that the chief ray of the projected light beam EL2 reflected by the illumination region IR of light shield M turns into telecentricity (parallel system) Mode, the chief ray that will expose to the illuminating bundle EL1 of the illumination region IR of light shield M is set to consciously in XZ planes Non- telecentricity state, is set to telecentricity state in the Y direction.
This characteristic of illuminating bundle EL1 is that the cylindrical lens 54 shown in Fig. 4 is assigned.Specifically, when setting from light The circumferential central point Q1 for covering the illumination region IR on the face P1 of M passes through and towards the line and the face P1 of light shield M of first axle AX1 Radius Rm 1/2 circle (Rm/2) intersection point Q2 when, with each chief ray of illuminating bundle EL1 for passing through from illumination region IR in XZ Towards the mode of intersection point Q2 in plane, the curvature of the convex barrel surface of cylindrical lens 54 is set.In this way, anti-in illumination region IR Each chief ray of the projected light beam EL2 for penetrating turns into flat with the straight line passed through from first axle AX1, point Q1, intersection point Q2 in XZ planes The state of row (telecentricity).Certainly, because the curvature by the face P1 of light shield M in the Y direction is considered as infinity, so projected light beam Each chief ray of EL2 also turns into telecentricity state in the Y direction.
Then, to carrying out multiple view fields (exposure area) PA1~PA6 of projection exposure using projection optical system PL Illustrate.As shown in figure 3, multiple illumination region IR1 on multiple view field PA1~PA6 in substrate P and light shield M~ IR6 is accordingly configured.That is, the multiple view field PA1~PA6 in substrate P are carrying the upstream in direction across median plane CL The first view field PA1, the 3rd view field PA3 and the 5th view field PA5 are configured in the substrate P of side, direction is being carried Downstream substrate P on configure the second view field PA2, the 4th view field PA4 and the 6th view field PA6.It is each to throw Shadow zone domain PA1~PA6 is in the elongated trapezoidal of the short side and side long that there is the width (Y-direction) along substrate P to extend Region.Now, trapezoidal each view field PA1~PA6 is that its short side is located at median plane CL sides and its side long is positioned at outside Region.First view field PA1, the 3rd view field PA3 and the 5th view field PA5 are separated by regulation in the direction of the width It is spaced and configures.In addition, the second view field PA2, the 4th view field PA4 and the 6th view field PA6 are in width On be separated by the interval of regulation and configure.Now, the second view field PA2 is configured in the first view field PA1 and in the axial direction Between three view field PA3.Similarly, the 3rd view field PA3 is configured in the second view field PA2 and the 4th throwing in the axial direction Between the PA44 of shadow zone domain.4th view field PA4 is configured in the 3rd view field PA3 and the 5th view field PA5 in the axial direction Between.5th view field PA5 is configured between the 4th view field PA4 and the 6th view field PA6 in the axial direction.Each projection Region PA1~PA6 in the same manner as each illumination region IR1~IR6, so that when being observed from the carrying direction of substrate P, adjacent is trapezoidal View field PA hypotenuse portion triangular part overlap mode (overlaps) configure.Now, view field PA turns into and causes in phase The light exposure of the repeat region of the adjacent view field PA shape substantially the same with the light exposure in unduplicated region.And And, the first~the 6th view field PA1~PA6 is configured to cover whole in the Y-direction of the exposure area A7 exposed in substrate P Individual width.
Herein, in fig. 2, when in XZ viewed in plan, on light shield M from odd number illumination region IR1 (and IR3, IR5) central point to the central point of the illumination region IR2 (and IR4, IR6) of even number week over long distances be set to： In the view field PA1 (and PA3, PA5) from odd number in the substrate P of the bearing-surface P2 for copying substrate supporting cylinder 25 Heart point is substantially equal to the week long range of the central point of the view field PA2 (and PA4, PA6) of even number.Because, The projection multiplying power of each projection optical system PL1~PL6 such as is set at the multiplying power (× 1).
Projection optical system PL and multiple view field PA1~PA6 are correspondingly provided with multiple (example in the first embodiment 6 in this way).In multiple projection optical system (segmentation projection optical system) PL1~PL6, inject respectively from multiple illumination regions Multiple projected light beam EL2 of IR1~IR6 reflections.Each projection optical system PL1~PL6 is by by each projected light beam of light shield M reflection EL2 conducts to each view field PA1~PA6 respectively.That is, the first projection optical system PL1 is by from the first illumination region IR1's Projected light beam EL2 is conducted to the first view field PA1, and similarly, the second~the 6th projection optical system PL2~PL6 will come from Each projected light beam EL2 of the second~the 6th illumination region IR2~IR6 is conducted to the second~the 6th view field PA2~PA6.It is many Individual projection optical system PL1~PL6 is being configured with first, the three, the 5th view field PA1, PA3, PA5 across median plane CL Side (left side of Fig. 2) configure the first projection optical system PL1, the 3rd projection optical system PL3 and the 5th projection optics System PL5.First projection optical system PL1, the 3rd projection optical system PL3 and the 5th projection optical system PL5 are in the Y direction On be separated by the interval of regulation and configure.In addition, multiple projection optical system PL1~PL6 are across median plane CL, the is being configured with 2nd, the side (right side of Fig. 2) of the four, the 6th view field PA2, PA4, PA6 configures the second projection optical system PL2, the 4th Projection optical system PL4 and the 6th projection optical system PL6.Second projection optical system PL2, the 4th projection optical system PL4 and the 6th projection optical system PL6 are separated by the interval of regulation and configure in the Y direction.Now, the second projection optical system PL2 is configured between the first projection optical system PL1 and the 3rd projection optical system system PL3 in the axial direction.Similarly, the 3rd Projection optical system PL3, the 4th projection optical system PL4, the 5th projection optical system PL5 are configured in the second projection in the axial direction Between optical system PL2 and the 4th projection optical system PL4, the 3rd projection optical system PL3 and the 5th projection optical system PL5 Between, between the 4th projection optical system PL4 and the 6th projection optical system PL6.In addition, the first projection optical system PL1, Three projection optical system PL3 and the 5th projection optical system PL5 and the second projection optical system PL2, the 4th projection optics system System PL4 and the 6th projection optical system PL6 is configured to when being observed from Y-direction be symmetrical.
Then, reference picture 4, the detailed structure to each projection optical system PL1~PL6 is illustrated.Further, since each Projection optical system PL1~PL6 is same structure, so with the first projection optical system PL1 (hereinafter simply referred to as projected lights System PL) as a example by illustrate.
Projection optical system PL is by the picture of the mask pattern on the illumination region IR (the first illumination region IR1) on light shield M It is projected in the view field PA in substrate P.Projection optical system PL from the light incident side of the projected light beam EL2 from light shield M successively With above-mentioned quarter wave plate 41, the above-mentioned beam splitter PBS and projection optics module PLM that shakes.
Quarter wave plate 41 and polarising beam splitter PBS can be with lamp optical system IL dual-purposes.In other words, light optics System IL and projection optical system PL shares quarter wave plate 41 and polarising beam splitter PBS.
The projected light beam EL2 of illuminable area IR reflections is being converted to rectilinearly polarized light by quarter wave plate 41 from circularly polarized light After (P polarization light), transmitted through polarising beam splitter PBS, it is changed into the imaging beam of telecentricity and is incident to projection optical system PL and (throws Shadow optics module PLM).
Projection optics module PLM is accordingly set with light optics module ILM.That is, the first projection optical system PL1's The first illumination region IR1 that projection optics module PLM will be illuminated by the light optics module ILM of the first lamp optical system IL1 The picture of mask pattern be projected in the first view field PA1 in substrate P.Similarly, the second~the 6th projection optical system PL2 The projection optics module PLM of~PL6 will be illuminated by the light optics module ILM of the second~the 6th lamp optical system IL2~IL6 The picture of mask pattern of the second~the 6th illumination region IR2~IR6 be projected in the second~the 6th view field in substrate P PA2~PA6.
As shown in figure 4, the picture that projection optics module PLM has the mask pattern made on illumination region IR images in intermediary image First optical system 61 of face P7, make at least a portion reimaging of the intermediary image being imaged by the first optical system 61 in substrate P View field PA the second optical system 62 and be configured at the perspective view diaphragm of the intermediate image plane P7 for being formed with intermediary image 63.In addition, projection optics module PLM is also with focus amendment optical component 64, as skew optical component 65, multiplying power amendment use Optical component 66, rotation correction mechanism 67 and polarization adjustment mechanism (polarization adjustment unit) 68.
First optical system 61 and the second optical system 62 be for example make it is remote obtained from Dai Sen (Dyson) system variant The reflection and refraction optical system of the heart.The optical axis (hereinafter referred to as the second optical axis BX2) of the first optical system 61 and median plane CL essence It is upper orthogonal.First optical system 61 has the first deflecting member 70, the first lens group 71, the first concave mirror 72.First deflection structure Part 70 is the triangular prism with the first reflecting surface P3 and the second reflecting surface P4.First reflecting surface P3 is reflection from polarised light point The projected light beam EL2 of beam device PBS simultaneously makes the projected light beam EL2 of reflection be incident to the first concave mirror by the first lens group 71 72 face.Second reflecting surface P4 be make the projected light beam EL2 reflected by the first concave mirror 72 by the first lens group 71 incidence, And the face that incident projected light beam EL2 is reflected to perspective view diaphragm 63.First lens group 71 includes various lens, various The optical axis of mirror is configured on the second optical axis BX2.First concave mirror 72 is configured at the multiple spot lights for making to be generated by fly's-eye lens 52 By the pupil plane being imaged via the various lens of the concave mirror of illuminated field diaphragm 55 to the first 72 from fly's-eye lens 52.
Projected light beam EL2 from polarising beam splitter PBS is reflected by the first reflecting surface P3 of the first deflecting member 70, from The field of view of the top half of the first lens group 71 by and be incident to the first concave mirror 72.It is incident to the first concave mirror 72 Projected light beam EL2 is reflected by the first concave mirror 72, and from the field of view of the latter half of the first lens group 71 by and it is incident To the second reflecting surface P4 of the first deflecting member 70.The projected light beam EL2 of the second reflecting surface P4 is incident to by the second reflecting surface P4 Reflection, from focus amendment optical component 64 and as skew optical component 65 by and be incident to perspective view diaphragm 63.
Perspective view diaphragm 63 has the opening of the shape of regulation view field PA.That is, can be according to perspective view diaphragm The shape of 63 opening carrys out the shape of regulation view field PA.Therefore, can be by the lamp optical system IL shown in Fig. 4 In the case that the opening shape of illuminated field diaphragm 55 is set to the shape similar to the shape (trapezoidal) of view field PA, can save Omit perspective view diaphragm 63.In addition, the opening shape of illuminated field diaphragm 55 is being set into the rectangle comprising view field PA In the case of, it is necessary to the perspective view diaphragm 63 specified to trapezoidal view field PA.
Second optical system 62 is the structure same with the first optical system 61, across intermediate image plane P7 and the first optical system System 61 is symmetrically arranged.The optical axis (hereinafter referred to as the 3rd optical axis BX3) of the second optical system 62 is with median plane CL substantially just Hand over, it is parallel with the second optical axis BX2.Second optical system 62 has the second deflecting member 80, the second lens group 81, the second concave mirror 82.Second deflecting member 80 has the 3rd reflecting surface P5 and the 4th reflecting surface P6.3rd reflecting surface P5 is made from perspective view The projected light beam EL2 of diaphragm 63 reflect and make the projected light beam EL2 after reflection from the second lens group 81 by and be incident to second The face of concave mirror 82.4th reflecting surface P6 is the projected light beam EL2 reflected by the second concave mirror 82 is led to from the second lens group 81 Cross and face that is incident and making incident projected light beam EL2 be reflected to view field PA.Second lens group 81 includes various lens, The optical axis of various lens is configured on the 3rd optical axis BX3.Second concave mirror 82 is configured at makes what is be imaged on the first concave mirror 72 Multiple spot light pictures by from the first concave mirror 72 via the various lens of the concave mirror 82 of perspective view diaphragm 63 to the second come into The pupil plane of picture.
Projected light beam EL2 from perspective view diaphragm 63 is reflected by the 3rd reflecting surface P5 of the second deflecting member 80, from The field of view of the top half of the second lens group 81 by and be incident to the second concave mirror 82.It is incident to the second concave mirror 82 Projected light beam EL2 is reflected by the second concave mirror 82, from the field of view of the latter half of the second lens group 81 by and be incident to 4th reflecting surface P6 of the second deflecting member 80.The projected light beam EL2 for being incident to the 4th reflecting surface P6 is anti-by the 4th reflecting surface P6 Penetrate, from multiplying power amendment optical component 66 by and be projected to view field PA.Thus, mask pattern on illumination region IR As with etc. multiplying power (× 1) be projected on view field PA.
Focus amendment optical component 64 is configured between the first deflecting member 70 and perspective view diaphragm 63.Focus amendment light Learn the focus state of the adjustment of component 64 projection to the picture of the mask pattern in substrate P.Focus amendment optical component 64 is for example to make The prism of two panels wedge-like reversely (reverse in the X direction in fig. 4) and the integral transparent parallel flat that overlaps.Pass through A pair of prisms are made to be slided along bevel direction in the state of the interval between not changing face relative to each other so that as parallel The variable thickness of flat board.Thus, the effective optical path length to the first optical system 61 is finely adjusted, and to being formed at intermediary image The focus state of the picture of the mask pattern of face P7 and view field PA is finely adjusted.
As skew optical component 65 is configured between the first deflecting member 70 and perspective view diaphragm 63.As skew is used up Component 65 is learned to be adjusted in the way of the picture of mask pattern that can be in micro mobile projector to substrate P in the image planes.As partially Optical component 65 is diverted from one use to another by the tiltable transparent parallel plate glass in XZ planes of Fig. 4 and can inclining in YZ faces for Fig. 4 Oblique transparent parallel plate glass is constituted.By adjusting this respective tilt quantity of two panels parallel plate glass, can make to be formed In the picture micro skew in the x direction or the y direction of intermediate image plane P7 and the mask pattern of view field PA.
Multiplying power amendment optical component 66 is configured between the second deflecting member 80 and substrate P.Multiplying power amendment optics structure Part 66 is for example configured to, and concavees lens, convex lens, concavees lens this 3 are configured at coaxially at predetermined intervals, recessed before and after fixing Mirror, makes the convex lens of centre just be moved up in optical axis (chief ray).Thus, it is formed at the picture of the mask pattern of view field PA While the image formation state of telecentricity is maintained, it is isotropically micro on one side to zoom in or out.Additionally, constituting multiplying power amendment optics 3 optical axises of lens group of component 66 are tilted in XZ planes in the mode parallel with the chief ray of projected light beam EL2.
Rotation correction mechanism 67 for example using executing agency (omit diagram), make the first deflecting member 70 around with the second optical axis BX2 is vertical and the axle parallel with Z axis carries out micro rotation.The rotation correction mechanism 67 is rotated by making the first deflecting member 70, Can make to be formed at the micro rotation in intermediate image plane P7 of the picture of the mask pattern of intermediate image plane P7.
Polarization adjustment mechanism 68 for example using executing agency (omitting diagram), makes quarter wave plate 41 around the axle orthogonal with plate face Rotate to adjust polarization direction.Polarization adjustment mechanism 68 is rotated by making quarter wave plate 41, can be thrown being projected to view field PA The illumination of shadow light beam EL2 is micro-adjusted.
In the projection optical system PL for constituting by this way, each chief ray of the projected light beam EL2 from light shield M with The face P1 of light shield M of the state of telecentricity from illumination region IR is projected, and by quarter wave plate 41 and polarising beam splitter PBS And it is incident to the first optical system 61.The projected light beam EL2 of the first optical system 61 is incident to by the of the first optical system 61 First reflecting surface (level crossing) P3 reflections of one deflecting member 70, and from the first lens group 71 by anti-by the first concave mirror 72 Penetrate.The projected light beam EL2 reflected by the first concave mirror 72 is again from first lens group 71 by and by the first deflecting member 70 Second reflecting surface (level crossing) P4 reflects, and transmits overfocus amendment optical component 64 and enter as skew optical component 65 It is incident upon perspective view diaphragm 63.The projected light beam EL2 passed through from perspective view diaphragm 63 is inclined by the second of the second optical system 62 Turn the 3rd reflecting surface (level crossing) P5 reflections of component 80, reflected by and by the second concave mirror 82 from the second lens group 81.Quilt The projected light beam EL2 of the reflection of the second concave mirror 82 again from the second lens group 81 by and by the second deflecting member 80 it is the 4th anti- Face (level crossing) P6 reflections are penetrated, multiplying power amendment optical component 66 is incident to.From the throwing that multiplying power amendment is projected with optical component 66 Shadow light beam EL2 is incident to the view field PA in substrate P, will become apparent from the picture of mask pattern in illumination region IR with etc. multiplying power (× 1) is projected on view field PA.
The projection image planes of the pattern of ＜ light shields and the exposure relation of plane ＞ of substrate
Hereinafter, projection image planes of the reference picture 6A and Fig. 6 B to the pattern of the light shield of the exposure device U3 of first embodiment Exposure relation of plane with substrate is illustrated.Fig. 6 A are the pass of the projection image planes with the plane of exposure of substrate of the pattern for showing light shield The explanatory diagram of system.Fig. 6 B are the changes of the focal position (defocus amount) for roughly showing to be projected on the pattern image in view field Explanatory diagram.
Exposure device U3 is imaged projected light beam EL2 by projection optical system PL, is consequently formed the throwing of the pattern of light shield M Image plane Sm.Projection image planes Sm is the position for being imaged the pattern of light shield M, is the position for turning into optimum focusing.Herein, light shield M Curved surface (being curve in ZX planes) configuration with radius of curvature as described above as Rm.Thus, projection image planes Sm also turns into curvature Radius is the curved surface of Rm.In addition, exposure device U3 is using the surface of substrate P as plane of exposure Sp.Herein, plane of exposure Sp refers to substrate The surface of P.Substrate P is held in the substrate supporting cylinder 25 of drum as described above.Thus, plane of exposure Sp is as radius of curvature The curved surface (being curve in ZX planes) of Rp.In addition, the side orthogonal with scan exposure direction of projection image planes Sm and plane of exposure Sp To the axle for being curved surface.
Therefore, projection image planes Sm and plane of exposure Sp is relative to scan exposure direction (substrate supporting cylinder 25 as shown in Figure 6A Outer peripheral face circumference) bending face.Therefore, projection image planes Sm bends with following face alternate position spike, i.e. in view field In the chief ray of projected light beam EL2 between the end positions of the exposed width A on the scan exposure direction of PA and center The face alternate position spike for being Δ Fm to the maximum on direction, plane of exposure Sp bends with following face alternate position spike, i.e. in view field PA Scan exposure direction on exposed width A end positions and center between projected light beam EL2 chief ray side The upward face alternate position spike for being Δ Fp to the maximum.Herein, as shown in Figure 6A, exposure device U3 carries out actual exposure with to projection image planes Sm Plane of exposure Sp (surface of substrate P) where light time turns into the mode of actual exposure face Spa, by the first axle AX1 and base of light shield M Second axle AX2 e axle supportings of plate supporting cylinder 25 are in exposure device main body.
Actual exposure face Spa intersects at two different position FC1, FC2 on scan exposure direction from projection image planes Sm. Additionally, exposure device U3 is adjusted by the position of each optical component to projection optical system PL, or protected using light shield The one party held in mechanism 11 and base supporting mechanism 12 is micro-adjusted to light shield M with the interval of substrate P, or focusing Amendment optical component 64 is adjusted, and can change actual exposure face Spa (being focused in normal direction relative to projection image planes Sm Adjustment direction) on position.
Projection image planes Sm and actual exposure face Spa is set as the exposed width on the scan exposure direction of view field PA In A, two different positions FC1, FC2 are intersected at respectively.Therefore, position FC1 in exposed width A and position FC2 difference By the pattern image of light shield M with best focus projection exposure in the surface of substrate P.In addition, the position in exposed width A In region between FC1 and position FC2, optimum focusing face (projection image planes Sm) and actual exposure as the pattern image being projected Face Spa compares the rear focus state being located behind, the region in the outside between position FC1 and position FC2, as what is be projected The optimum focusing face (projection image planes Sm) of pattern image is compared with the Spa of actual exposure face positioned at the prefocusing state in front.
That is, on the surface of substrate P along actual exposure face Spa from an end As of exposed width A towards another end In the case of portion Ae, the pattern image in substrate P is exposed in the position for exposing end As when starting with the defocus amount of regulation, Hereafter, defocus amount process over time and reduce, in position, FC1 is exposed with optimum focusing (defocus amount is zero) state.If By the best focus of position FC1, then defocus amount reversely increases, and is become maximum in the center FC3 of exposed width A Defocus amount.The center FC3 of exposed width A is reduced as flex point, hereafter defocus amount, and in position, FC2 is again with optimum focusing Be exposed to pattern image in substrate P by state.If by the best focus of position FC2, defocus amount increases again, pattern image Another end Ae that is exposed on terminate.In this way, region and position FC1 between position FC1 and position FC2 and position FC2 it Between the symbol that defocuses of the direction for defocusing in region in outside be different.
As described above, being moved to from the end As of the exposed width A of view field PA with the peripheral speed for specifying in substrate P In a period of the Ae of end, as shown in Figure 6B, projection is to each point in the pattern image in substrate P under prefocusing state (position As) Start to be exposed, while according to best focus (position FC1), rear focus state (position FC3), best focus (position Put FC2), the order of prefocusing state (position Ae) continuously change, while being exposed in substrate P.It is poly- on the longitudinal axis of Fig. 6 B Burnt position (or defocus amount) is zero to refer to, the difference (Sm-Spa) of the position of projection image planes Sm and the position of actual exposure face Spa The best focus of vanishing.Additionally, the transverse axis of Fig. 6 B represents the linear position of exposed width A, but can also be Position in the circumferential direction of the outer peripheral face of substrate supporting cylinder 25.
Defocus amount under the prefocusing state (positive direction) of end As, Ae of exposed width A, center FC3's Imaging performance (resolution ratio, the depth of focus), throwing of the defocus amount under focus state (negative direction) according to projection optical system PL afterwards The exposed width A of shadow zone domain PA, the minimum dimension for answering projected light cover pattern, the curvature of the face P1 (projection image planes Sm) of light shield M Radius Rm, substrate supporting cylinder 25 outer peripheral face (the plane of exposure Spa in substrate P) radius of curvature R p and determine appropriate model Enclose.Specific numerical example is explained below, like this, is continuously changed by interior during the scan exposure of whole exposed width A Become focus state, in mask pattern, particularly single fine rule or discrete contact hole (pillar through hole) can be amplified Etc. the depth of focus that isolated patterns seem.
In addition, in the present embodiment, drum is set to by by the surface of the face P1 of light shield M and substrate P, can be right The plane of exposure of the projection image planes on scan exposure direction that mask pattern is projected on that substrate P side obtains and the substrate being exposed Assign drum poor.Therefore, exposure device U3 is only by the rotary motion of light shield M and substrate supporting cylinder 25, it becomes possible to according to The position on scan exposure direction in view field PA continuously changes focus state, and, it is prevented from relative to reality The image contrast change of the focusing in matter.In addition, in the present embodiment, due to making in scan exposure with view field PA Two positions on direction set exposed width A as the mode of optimum focusing, it is possible to reducing in exposed width A Average defocus amount, and increase exposed width A.Thereby, it is possible in the case where the illumination of projected light beam EL2 is reduced, or, Light shield M on scan exposure direction is accelerated or in the case of the sweep speed of substrate P, it is ensured that suitable light exposure, thus, Substrate can be processed with high efficiency.Further, since average defocus amount can be reduced relative to exposed width, so also It is able to maintain that quality.
In the present embodiment, according to exposed width A coordinate position (perimeter locations) makes focal position difference to carry out Exposure, its result is to be tired out the pattern image being projected in substrate P with different focus states on whole exposed width A As turning into the final picture intensity distribution being formed on the plane of exposure of substrate P obtained from meter.Herein, the picture being accumulated by is entered Row explanation, for the purpose of simplifying the description, first, using point as intensity distribution illustrates its concept.Generally, put as intensity distribution is right with it There is dependency relation than degree.The only point of the position with defocus amount z is as intensity distribution I on optical axis direction (focus variations direction) (z) such as following formula.Herein, the wavelength of illuminating bundle EL1 is set to λ, by the numerical aperture of the substrate-side of projection optical system PL NA is set to, I will be set in the intensity distribution of preferable best focus positiono,
As Δ Dz=(pi/2/λ) × NA2During × z,
Put as intensity distribution I (z) is
I (z)=[Sin (Δ Dz)/(Δ Dz)]2×Io。
When using this point as intensity distribution I (z), corresponding with exposed width A aggregate-value can be obtained (or average Value), and, the defocus amount in actual center (the center FC3 in Fig. 6 A) can be taken on transverse axis, as emulation And obtain the intensity distribution of each defocus amount.Accordingly, focus state (projection image planes Sm and actual exposure are adjusted by exposure device U3 The position relationship of face Spa), the intensity distribution (image contrast) of the pattern image obtained in exposure can be adjusted to optimal shape State.
In addition, generally, the resolution ratio R and depth of focus DOF of projection optical system PL are expressed from the next.
R=k1 λ/NA (0 ＜ k1≤1)
DOF=k2 λ/NA2(0 ＜ k2≤1)
Herein, k1, k2 be can because conditions of exposure, photosensitive material (photoresist etc.) or exposure after development treatment Or the factor changed into film process, the k1 factors of resolution ratio R in the range of general 0.4≤k1≤0.8, the depth of focus The k2 factors of DOF can probably be expressed as k2 ≈ 1.
The definition of the depth of focus DOF based on this projection optical system PL, in the present embodiment, preferably adjustment in advance Approx to meet following relational expression.
[mathematical expression 1]
DOF/2 ＜ (Δ Rm+ Δ Rp)≤3DOF
Herein, surface (the actual exposure face of the radius of curvature R m based on projection image planes Sm (the face P1 of light shield M), substrate P Spa radius of curvature R p and exposed width A), obtain Δ Rm, Δ Rp with following formula respectively.
[mathematical expression 2]
[mathematical expression 3]
It can be seen from the formula, Δ Rm and Δ Rp is illustrated respectively in Δ Fm, the Δ Fp shown in Fig. 6 A.In addition, above-mentioned Relational expression 1 preferably further meets DOF ＜ (Δ Rm+ Δ Rp).It is above-mentioned to meet in the exposure device U3 of present embodiment The mode of relational expression 1 determines exposed width A, radius of curvature R m, Rp, by meeting above-mentioned relational expression 1, can either maintain shape Into the quality (Line-width precision, positional precision, registration accuracy etc.) of the various patterns in the display panel in substrate P, again can Improve productivity.It is described in detail using second embodiment for this point.
In addition, in the present embodiment, the excursion of the defocus amount in by exposed width A, i.e. by shown in Fig. 6 B The defocus amount in positive direction at end As, Ae and the defocus amount in the negative direction at the center FC3 of exposed width A Difference when being set to Δ DA, the relation between depth of focus DOF according to projection optical system PL is preferably set to satisfaction 0.5 The relation of≤(Δ DA/DOF)≤3, is more preferably set as satisfaction 1≤(Δ DA/DOF).It is set as completely by by exposure device U3 The sufficient relation, can either maintain quality (Line-width precision, the position essence of the various patterns of the display panel being formed in substrate P Degree, registration accuracy etc.), productivity can be improved again.Also it is described in detail using second embodiment for this point.
In addition, exposure device U3 is preferably set to, and as Fig. 6 B of present embodiment, the projection image of the pattern of light shield M Differences of the actual exposure face Spa of face Sm and substrate P on scan exposure direction is with the centre bit of the exposed width A of view field PA FC3 is put for axle is changed in the way of line symmetrical (being in fig. 6b symmetrical).
In addition, in the present embodiment, as shown in Figure 6B, can be carried out to following two values obtained by cumulative calculation Compare, the position relationship of projection image planes Sm and actual exposure face Spa is set in the mode for making both roughly equal, this two by tiring out The value being calculated refers to, being positive end As to position FC1 from defocus amount in the exposed width A of view field PA Interval and the interval from the position FC2 to end Ae in the defocus amount of positive direction is accumulated by value (absolute value), With the value for being accumulated by the defocus amount of negative direction in the interval being negative position FC1 to position FC2 from defocus amount (definitely Value).
Multiple projection optics module PLM are at least configured two by the exposure device U3 of present embodiment on scan exposure direction Row, in the Y-direction orthogonal with scan exposure direction, make the end (three of the view field PA of adjacent projection optics module PLM Angled portion) overlap each other so that the pattern of light shield M continuous exposure in the Y direction.Thus, suppress because adjacent in the Y direction The contrast or light exposure of the pattern image at continual-connecting-part (overlapping region) place between Liang Ge view fields PA are different and produce band The deviation of shape.In the present embodiment, on this basis, with the view field on actual exposure face Spa (surface of substrate P) Best focus position is formed with two the mode of (position FC1, FC2) and sets projection image planes Sm on scan exposure direction in PA With the position relationship of actual exposure face Spa, therefore, it is possible to reduce because projecting image planes Sm and actual exposure face in scan exposure The change of the image contrast that the dynamic that the position relationship of Spa somewhat changes is defocused and produced.Thus, it is also possible to reduce adjacent The difference of the image contrast that the overlapping region between view field PA produces such that it is able to manufacture the unconspicuous high-quality of continual-connecting-part Flexible display panels.
As in this embodiment, it is arranged in and scanning exposure by each view field PA of multiple projection optics module PLM When in the orthogonal Y-direction of light direction (X-direction), to substrate in the whole width on the scan exposure direction of each view field PA Illumination (intensity of exposure light) on P carry out it is accumulative obtained from aggregate-value preferably in the Y side orthogonal with scan exposure direction To any position on all constants.Additionally, some coincidence of the end of Liang Ge view fields PA adjacent in the Y direction Part (overlapping region of triangle), be also set in an aggregate-value for delta-shaped region and another delta-shaped region Adding up to for aggregate-value is identical with the aggregate-value of not overlapping region.Thereby, it is possible to suppress light exposure orthogonal with scan exposure direction Direction on change.
In addition, exposure device U3 is set to cylinder by by projection image planes Sm and plane of exposure Sp (actual exposure face Spa) Face, even if configuring multiple (configuration odd number and even number two are arranged) projected lights on scan exposure direction as in this embodiment Module PLM is learned, due to projecting the pass of image planes Sm and plane of exposure Sp (actual exposure face Spa) in each projection optics module PLM It is all same, so still being able to adjust their relation together.As the projection aligner of common poly-lens mode, In the case that projection image planes and plane of exposure are plane, for example, in the view field of the projection optics module of odd number, if The increase depth of focus and plane of exposure (surfaces of planar substrates) is inclined relative to projection image planes, then in the projected light of even number Be difficult to allow larger can be produced to defocus in the view field for learning module.On the other hand, as in this embodiment, pass through Projection image planes Sm and plane of exposure Sp (actual exposure face Spa) is set to barrel surface, on scan exposure direction two are arranged in Row projection optics module PLM can be by the of the pivot of cylindric light shield M in the focusing adjustment of each view field PA Second axle AX2 of the pivot of one axle AX1 and substrate supporting cylinder 25 intervals in z-direction or each projection optics mould Group PLM in multiplying power amendment with the adjustment of optical component 66 simple realization.Thereby, it is possible to be pressed down using simple apparatus structure Make and change relative to the image contrast for defocusing.Due to the change of image contrast can either be suppressed, scan exposure area can be increased again The exposed width in domain, so can also improve production efficiency.
[second embodiment]
Hereinafter, reference picture 7 is illustrated to the exposure device U3a of second embodiment.Additionally, in order to avoid the note for repeating Carry, illustrated only for the part different from first embodiment, for the part same with first embodiment, mark Note is illustrated with first embodiment identical reference.Fig. 7 is the exposure device for showing second embodiment (at substrate Reason device) integrally-built figure.The exposure device U3 of first embodiment is protected using cylindric substrate supporting cylinder 25 The structure of the substrate P passed through from view field PA is held, but the exposure device U3a of second embodiment is to be by substrate P supporting Structure that is plane and being held in moveable base supporting mechanism 12a.
In the exposure device U3a of second embodiment, base supporting mechanism 12a is plane with substrate P is remained Substrate objective table 102 and substrate objective table 102 is scanned along the X direction in the face orthogonal with median plane CL mobile Mobile device (omits diagram).Therefore, substrate P is except flexible fine sheet (resin film such as PET, PEN, very thin bending Glass sheet, thin metal sheet metal etc.) beyond, or almost unbending individual glass substrate.
Because the bearing-surface P2 of the substrate P of Fig. 7 is plane (radius of curvature ∞) substantially parallel with XY faces, thus by from Light shield M reflection and from each projection optics module PLM by and be incident upon the chief ray of projected light beam EL2 in substrate P and XY puts down Face is vertical.
In addition, in this second embodiment also in the same manner as Fig. 2 above, when in XZ viewed in plan, from cylindrical shape Light shield M on illumination region IR1 (and IR3, IR5) central point to illumination region IR2 (and IR4, IR6) central point Untill girth be set as, the central point with the view field PA1 (and PA3, PA5) from the substrate P for copying bearing-surface P2 The air line distance in X-direction to the central point of the second view field PA2 (and PA4, PA6) is substantially equal.
Also it is the mobile device of the control base board supporting device 12a of slave control device 16 in the exposure device U3a of Fig. 7 (line motor of scan exposure or the executing agency of fine motion etc.), the rotation with light shield holding cylinder 21 synchronously drives base Plate objective table 102.
Hereinafter, projection image planes and substrate of the reference picture 8 to the mask pattern in the exposure device U3a of second embodiment Exposure relation of plane is illustrated.Fig. 8 is explanatory diagram of the projection image planes with the exposure relation of plane of substrate for showing mask pattern.
The pattern that exposure device U3a forms light shield M by being imaged projected light beam EL2 by projection optical system PL Projection image planes Sm1.The face that the cylindric mask pattern face that image planes Sm1 is light shield M is imaged under best focus is projected, is in Barrel surface.Herein, because the curved surface that the illumination region IR on light shield M is radius of curvature R m1 as described above (is round in XZ planes Arc) a part, so projection image planes Sm1 be also radius of curvature R m1 curved surface (being circular arc in XZ planes) a part.Separately Outward, the plane surface that projection has the substrate P of the picture of mask pattern turns into plane of exposure Sp1 (radius of curvature ∞).Therefore, as schemed Shown in 8, the projection image planes Sm1 of the view field PA of projection image planes Sm1 (left side) and even number of the view field PA of odd number (right side) bends to cylindrical shape in scan exposure direction (X-direction), in the same manner as shown in Fig. 6 A above, in projected area In exposed width A on the scan exposure direction of domain PA, with the focal position as two ends and at the center of exposed width A Face alternate position spike (focus variations width) Δ Fm of the difference of focal position.Herein, when scan exposure so that match somebody with somebody on the surface of substrate P It is placed in actual exposure face Spa1.Because plane of exposure Sp1 and actual exposure face Spa1 are planes, so sweeping in view field PA Retouch in the exposed width A in exposure directions, the variable quantity of the surface location of Z-direction is 0.Actual exposure face Spa1 is set as and throwing Image plane Sm1 intersects at different two position FC1, the FC2 on scan exposure direction separate.That is, exposure device U3a passes through Multiplying power amendment optical component 66 in projection optical system PL etc. is adjusted, or makes light shield maintaining body 11 (first Axle AX1) and substrate objective table 102 in one party fine motion in z-direction, will project image planes Sm1 and actual exposure face The relative position relation of Spa1 is set as the state of regulation.
Two positions FC1, FC2 are respectively the light shields come with best focus in exposure projections image planes Sm1 in the position The position of pattern image.
Thus, in the present embodiment, by the rotary motion of cylindric light shield M, it is also possible in scan exposure direction Exposed width A in enter to exercise the scan exposure that focus state continuously changes within the limits prescribed, and, phase can be suppressed Image contrast for actual focus variations changes.Like this, even if plane of exposure Sp1 (actual exposure face Spa1) is flat Face, by the way that the cylinder planar that image planes Sm1 is set to be bent upwards in scan exposure side will be projected, still without tilted substrates P, it becomes possible to The effect of the depth of focus for obtaining seeming increasing the mask pattern picture being exposed in substrate P, and image contrast can be suppressed Change.This action effect by the pattern image projection exposure from common plane light shield in being supported to cylinder planar Similarly it is obtained in that in the case of the surface (plane of exposure) of substrate.
Additionally, in this case, due to face alternate position spike (focus variations width) the Δ Fm shown in Fig. 8 with it is preceding The Δ Rm of the formula 2 in face is identical, so being obtained by following formula.
[mathematical expression 4]
Therefore, if based on the formula 2, trial carries out projection state or imaging characteristic of the exposure device U3a of Fig. 7 etc. Various emulation, then can obtain the result such as Fig. 9~Figure 17.
Additionally, when the emulation is carried out, the radius Rm of the face P1 (projection image planes Sm1) of cylindric light shield M is set to 250mm (diametersIt is 500mm), the wavelength X of the illuminating bundle EL1 of exposure is set to i lines (365nm), by projection optics system System PL be set to numerical aperture NA be 0.0875 etc. multiplying power preferred view system, by plane of exposure Sp1 (actual exposure faces Spa1) it is set to the plane that radius of curvature is ∞.If the k2 factors of the depth of focus DOF for depending on technique are set into 1.0, this The depth of focus DOF for planting projection optical system PL passes through λ/NA2And draw width be approximately 48 μm (relative to optimum focusing face substantially ± 24 μm of scope).Additionally, in following emulation, for convenience, it is 40 μm that depth of focus DOF also is set into width sometimes (relative to substantially ± 20 μm of the scope in optimum focusing face).
Next, Fig. 9 shows defocus properties Cms of this projection optical system PL in exposed width A, transverse axis represent with The center of exposed width A is the coordinate of the X-direction of origin, and the longitudinal axis represents the throwing of with best focus position as origin (zero point) The defocus amount of image plane Sm1.The chart of the Fig. 9 also depicting in formula 2 be above set to 20mm by exposed width A and make this The coordinate position of width A change between -10mm~+10mm obtained from face alternate position spike Δ Rm.As the diagram of Fig. 9, because The face P1 (projection image planes Sm1) of light shield M cylinder planar is bent on scan exposure direction and so that defocusing in exposed width A Characteristic Cm changes in arc-shaped.
Figure 10 is in the defocus properties Cm shown in Fig. 9, putting the change width as intensity relative to depth of focus DOF such as How the chart that is emulated is changed, and transverse axis represents error, the projected light because of the surface of substrate P or the face precision in mask pattern face Aberration in image planes direction of system PL etc. and in issuable focus direction fuzzy quantity (surface of substrate P relative to dissipate The skew in a focus direction of burnt characteristic Cm), the longitudinal axis is represented a little as the value of intensity.In Fig. 10, defocus properties in fig .9 On the premise of Cm, the point calculated in the case of will being 0 × DOF in depth of focus DOF as intensity distribution in exposed width A The point at center (origin) as intensity 1.0 are set to be standardized.Figure 11 is to changing in arc-shaped in exposed width A The chart that the variable quantity of the defocus properties Cm of Fig. 9 is emulated with an example of the relation of intensity difference (Strength Changes amount). Figure 12 be in the optimum focusing set for device with by defocusing of being produced by device it is when being set to 24 μm, in exposed width In the defocus properties Cm and line and interval (L/S, L＆S of arc-shaped change in A：Line and space) pattern contrast change Between relation the chart that is emulated of an example.Figure 13 is similarly to changing in arc-shaped in exposed width A Defocus properties Cm and L/S patterns contrast than change the chart of another example that is emulated of relation.Figure 14 It is to being in the defocus properties Cm of arc-shaped change and the CD values (critical dimension) of L/S patterns in exposed width A and cutting position The chart for example that accurate relation is emulated.Figure 15 is to defocusing spy in arc-shaped change in exposed width A Property Cm and isolated line (ISO patterns) a chart for example being emulated of the relation that changes of contrast.Figure 16 be to In exposed width A in the defocus properties Cm of arc-shaped change and the contrast of isolated line than the relation of change carried out emulation The chart of another example.Figure 17 is in the defocus properties Cm of arc-shaped change and the CD values of isolated line to the A in exposed width And cut the chart for example that the relation of level is emulated.
First, under these conditions, as shown in Figure 10, obtain to be in defocusing for arc-shaped change in exposed width A The point relative to defocus amount that characteristic Cm is produced in the case of being distributed in units of depth of focus DOF is as intensity distribution I (z). Point is obtained as intensity distribution using previously described expression formula.
I (z)=[Sin (Δ Dz)/(Δ Dz)]2×Io,
Δ Dz=(pi/2/λ) × NA2×z
Then, it is assumed that take various values in the defocus width of arc-shaped change in exposed width A, 0,1 is for example taken × DOF, 2DOF, 3 × DOF, the situation of 4 × DOF, calculate by by defocus amount it is average be set to optimum focusing in the way of adjust base Point in the case of plate is as intensity distribution.In addition, taking various values in the defocus width of arc-shaped change in exposed width A Situation, on the basis of the defocus amount and its slit width, calculate point picture in the case where it is defocused from the position strong Degree distribution.Like this, summarize when each exposed width A for utilizing the exposed width A for calculating uniquely to determine is interior in circular arc The point during defocus width of shape change is as intensity distribution and the relation for defocusing.Specifically, respectively in exposure device U3a In exposed width in the defocus width of arc-shaped ground change take 0,0.5 × DOF, 1 × DOF, 1.5 × DOF, 2 × DOF, 2.5 × DOF, 3 × DOF, 3.5 × DOF, the situation of 4 × DOF, calculate focusing error that point assumes as intensity distribution and upon exposure, scattered Burnt relation.
Then, it is assumed that take various values in the defocus properties Cm of arc-shaped change in exposed width A, 0 is for example taken × DOF, 1 × DOF, 2 × DOF, 3 × DOF, the situation of 4 × DOF, calculate with by the average side for being set to optimum focusing of defocus amount Formula adjusts the point in the case of substrate P as intensity distribution.In addition, for the defocusing in arc-shaped change in exposed width A Characteristic Cm takes the situation of various values, on the basis of the defocus amount and its slit width, calculates the feelings for defocusing it from the position Point under condition is as intensity distribution.Like this, summarize to be respectively to be defocused using what the exposed width A for calculating uniquely determined Point during characteristic Cm is as intensity distribution and the relation for defocusing.Specifically, respectively for will be emulated as exposure device U3a On the basis of set defocus properties Cm as shown in Figure 9 take 0 × DOF, 0.5 × DOF, 1 × DOF, 1.5 × DOF, 2 × DOF, 2.5 × DOF, 3 × DOF, 3.5 × DOF, the situation of 4 × DOF, calculate point as intensity distribution is missed with the focusing for assuming upon exposure The relation of difference (relative to the skew of set projection image planes Sm1 and the position relationship that should be set on the surface of substrate P).This Chart equivalent to Figure 10.
In Fig. 10, transverse axis is set to defocus amount [μm], the longitudinal axis is set to standardized point as intensity level.Further, since Exposure device U3a carries out the rotary motion that cylindric mask pattern face projects image planes Sm1, and projected light beam EL2 is projected to In substrate P, so there is 2 changes in the focusing error envisioned in exposure.Therefore, the positive side and the shape of the point picture of minus side for defocusing State is somewhat different.In the present embodiment, the picture intensity and the picture intensity of the position for -40 μm of the position for+40 μm will be defocused Position as symmetrical intensity is used as optimum focusing.As shown in the chart of Figure 10, as the amplitude based on rotation becomes big, i.e. Become big along defocus properties Cm as shown in Figure 9 with exposure area internal defocusing width, the point in optimum focusing is as intensity Reduce, the point when defocusing also reduces as the change of intensity.
Hereinafter, calculate for the various situations for changing the defocus properties Cm in exposed width A in arc-shaped change Point calculates point as the difference of the maxima and minima of intensity as Strength Changes, further, calculates in exposed width A internal defocusings Characteristic Cm differs only by the point of two points of 0.5DOF as the difference of Strength Changes.Figure 11 illustrates the result of calculation.Figure 11's is vertical Axle represents two points as the difference component of Strength Changes, and transverse axis is represented when making defocus properties Cm require guards escorting prisoners when 0.5DOF changes The object of component.That is, on the transverse axis of Figure 11, such as leftmost point is to change defocus properties Cm as intensity difference (about 0.02) During 0 × DOF and change 0.5 × DOF when difference.According to the simulation result of the Figure 11, point works as defocus properties as the difference of Strength Changes During states of the Cm from the State Transferring of the amount for having changed 0.5 × DOF to the amount for having changed 1 × DOF, and as defocus properties Cm from change Changed 2.5 × DOF amount State Transferring to the amount for having changed 3 × DOF state when, integrally differ greatly.That is, 0.5 × In the range of DOF~3 × DOF, relative to the change of defocus amount, point is preferable as the gentle effect of Strength Changes change.Therefore, along The defocus amount of defocus properties Cm is set as that effect is preferable during the amplitude of 0.5 times~3 times of depth of focus DOF.
Additionally, in the chart shown in Figure 10, being made with the thickness coating photoresist for specifying on the surface to substrate P In the case of for photosensitive layer, the point formed as picture on the photoresist is as the value of intensity is according to the resist for being used Deng and it is different, but according to experiment in the case where the k1 factors of resolution ratio are 0.5 or so, a main points is generally 0.6 as intensity More than, it becomes possible to form picture.
Herein, if the desired focusing error of exposure device to be set to the definition λ/NA of depth of focus DOF2Untill Defocus width (is set to ± 24 μm) in the present embodiment, then by by the amplitude for the defocusing i.e. defocus width in exposure area 2.5 × DOF is set to, can make to be reduced as the change of intensity, so as to form the picture of mask pattern well.
Hereinafter, various computings are carried out for the situation that will be used for projected light cover pattern and be set to L/S (line/interval) pattern. Herein, below, the consideration object that will be defocused is set to the scope of the definition of the depth of focus, it is, setting in the present embodiment It is ± 24 μm.L/S (line/interval) pattern be by the online cross direction of linear pattern that a plurality of line width is 2.5 μm with 2.5 μm of intervals It is arranged as the pattern of clathrate.Further, because image formation state is different also according to lighting condition, so in present embodiment In, it is that illumination numerical aperture σ is set to 0.7 by the lighting condition based on lamp optical system IL.
First, the situation for turning to various values is become for the defocus properties Cm made shown in Fig. 9, i.e., as described above, for In units of 0.5DOF become turn to 0 × DOF, 0.5 × DOF, 1 × DOF, 1.5 × DOF, 2 × DOF, 2.5 × DOF, 3 × DOF, The situation of 3.5 × DOF, 4 × DOF, the light intensity distributions and DOF/2 for calculating the L/S pattern images of best focus defocus shape State, i.e., with+24 μm or -24 μm light intensity distributions of the L/S pattern images of the state for defocusing.
Based on the result of calculation, contrast is calculated under each state of the defocus condition of best focus and DOF/2 Change, Figure 12 be draw the change figure.The transverse axis of Figure 12 represents the defocus properties in arc-shaped change in exposed width A The defocus width of Cm, the longitudinal axis represents contrast, and the contrast change of best focus is set into 0 μm (BestF), will defocus shape The contrast change of state is set to ± 24 μm of Def.In addition, based on the result shown in Figure 12, it is optimal poly- figure 13 illustrates calculating The ratio between the contrast [0 μm (BestF)] of coke-like state and the contrast [± 24 μm of Def] of DOF/2 defocus conditions, i.e., [0 μm (BestF) result of]/[± 24 μm of Def].Transverse axis is set in exposed width A Figure 13 the defocus properties in arc-shaped change The defocus width of Cm, contrast is set to by the longitudinal axis.
In addition, calculating the CD of the defocus width of the defocus properties Cm in each exposed width A in arc-shaped change (Critical Dimension：Critical dimension) value [μm] and assume photoresist cut level (as luminous intensity). Additionally, calculating the CD values in the case where defocusing as ± 24 μm, calculating cuts level in the case of optimum focusing.In Figure 14 In the result of calculation is shown.The transverse axis of Figure 14 represents dissipating on the defocus properties Cm in arc-shaped change in exposed width A Burnt width, the left side of the longitudinal axis represents CD values, and right side represents the relative light intensity for cutting level.
As shown in figure 14, in the case where the picture to be projected is L/S patterns, relative to the amplitude for defocusing in exposure area Change, the change (change of CD values) of line width is less, and as shown in Figure 12 above, contrast is changed greatly.But, such as Figure 13 It is shown, it is known that as the amplitude that defocuses becomes big, the contrast under best focus with it is right under ± 24 μm of defocus conditions Than the ratio between degree close to 1.Like this, the circumference in the projection image planes Sm1 along cylinder planar sets the scanning exposure of exposed width A In light mode, by defocus width of the increase based on the defocus properties Cm changed in arc-shaped in exposed width A, it is right to make Than degree ratio close to 1, the difference of the image contrast of the image contrast and defocus condition of best focus is reduced.Thus, it is being cylinder In the case of the light shield M (cylindric projection image planes Sm1) of shape, only by rotary motion, it becomes possible to enter to be about in optimum focusing When the change of contrast and the contrast when defocusing suppress to obtain very little, the line width of the pattern that can realize both suppressing exposure Change, increase projection image planes Sm1 and the variation surplus in focus direction (radial direction of barrel surface) on the surface of substrate P are swept again Retouch exposure.
Hereinafter, various computings are carried out for the situation that the pattern of light shield is set to isolated line pattern.Herein, below, also will The consideration object for defocusing is set to the scope of the definition of depth of focus DOF, i.e. be set to ± 24 μm in the present embodiment.It is isolated The pattern of line is the linear pattern that line width is 2.5 μm.Further, because image formation state is different also according to lighting condition, so 0.7 will be set to as the illumination numerical aperture σ of lighting condition.
In the same manner as the situation of the L/S patterns for emulating before, first, turned to for the defocus properties Cm shown in Fig. 9 is become The situation of various values, i.e., as described above, in units of 0.5DOF become turn to 0 × DOF, 0.5 × DOF, 1 × DOF, 1.5 × DOF, 2 × DOF, 2.5 × DOF, 3 × DOF, 3.5 × DOF, the situation of 4 × DOF, calculate the isolated of best focus The light intensity distributions of line pattern picture, the defocus condition of DOF/2, that is, calculate isolated in the state of+24 μm or -24 μm are defocused The light intensity distributions of line pattern picture.Based on the result of calculation, obtain and as shown in figure 15 defocus width relative to every 0.5DOF The variation characteristic of the image contrast of the change of degree.
The transverse axis of Figure 15 represents the defocus width of the defocus properties Cm in arc-shaped change in exposed width A, longitudinal axis table Show the contrast of isolated line pattern image.In addition, based on the result shown in Figure 15, in the same manner as Figure 13 before, showing in figure 16 Go out to calculate the ratio between the contrast [0 μm (BestF)] of best focus and the contrast [± 24 μm of Def] of DOF/2 defocus conditions, That is the result of [0 μm (BestF)]/[± 24 μm of Def].Figure 16 using transverse axis as in exposed width A in arc-shaped change dissipate The ratio between the defocus width of burnt characteristic Cm, the longitudinal axis is spent as a comparison.
In addition, calculating the CD of the defocus width of the defocus properties Cm in each exposed width A in arc-shaped change (Critical Dimension) value [μm] and assume photoresist cut level (as luminous intensity).Additionally, calculating CD values in the case where defocusing as ± 24 μm, level is cut in the case of optimum focusing.Figure 17 illustrates the calculating As a result.The transverse axis of Figure 17 represents the defocus width on the defocus properties Cm in arc-shaped change in exposed width A, the longitudinal axis Left side represents CD values, and right side represents the relative light intensity for cutting level.As shown in figure 17, compared with for the situation of L/S patterns, In the case that pattern is isolated line, the change relative to the contrast of the change of the amplitude for defocusing in exposure area is smaller.With It is relative, it is known that in the case where pattern is isolated line, relative to the change of defocus amount, the change of line width (CD values) is bigger.
Therefore, by will be increased based on defocus width caused by the defocus properties Cm changed in arc-shaped in exposed width A Greatly such as 2.5 × DOF or 3.0 × DOF, even if the focal position of setting produces variation, it is also possible to prevent from being exposed in substrate P The line width variation of the pattern of light.That is, even if in exposure because of various reasons, causing projection image planes Sm1 and substrate P set in advance The relative position relation in a focus direction on surface change, it is also possible to prevent from becoming relative to the line width of the focus variations Change such that it is able to keep display panel, the quality of electronic device for being manufactured in substrate P successively well.In addition, understanding just to exist For the isolated line of 2.5 μm of line width during optimum focusing, 2.5 μm cut level with will based in exposed width A in circle The defocus width increase of the defocus properties Cm of arcuation change and be changed into value greatly, be as a result that relative to defocusing, the change of line width also becomes It is small.
In addition, Figure 14 and Figure 17 before use, the difference for cutting level to the difference based on pattern is compared When, if the defocus width based on the defocus properties Cm changed on circular arc in exposed width A is set into 2.25 × DOF, Relative to both L/S patterns and isolated line pattern to cut level (luminous intensity) substantially uniform.Therefore, by will be based on defocusing The defocus width of characteristic Cm is set to the scope of 2.25 × DOF, even if the mask pattern mixed in L/S patterns and isolated line pattern In the case of, it is also possible to manufacture the substrate of high-quality.Thus, it is not necessary to consider to cut level on L/S patterns with isolated line pattern Line width amendment (OPC, line width skew) of required mask pattern etc., can coexist both in the case of inconsistent.In addition, not Must for line width amendment (OPC, skew) light shield of reforming, or multiple light shields are manufactured to adjust, therefore, it is possible to reduce system The step of making and cost.In addition, set skew to line width to change the line width of a part for mask pattern, thus, additionally it is possible to anti- Only produce in this part that the depth of focus narrows etc. in turn is bad.
[the 3rd implementation method]
Hereinafter, reference picture 18 is illustrated for the exposure device U3b of the 3rd implementation method.Additionally, in order to avoid repeating Record, illustrated only for the part different from second embodiment, for the composition portion same with second embodiment Minute mark is noted with second embodiment identical reference to illustrate.Figure 18 is the exposure device for showing the 3rd implementation method The integrally-built figure of (substrate board treatment).The exposure device U3a of second embodiment is to use the light reflected with light shield to make It is the structure of the reflection-type light shield of projected light beam, the exposure device U3b of the 3rd implementation method is made using the light for transmiting light shield It is the structure of the transmission-type light shield of projected light beam.
In the exposure device U3b of the 3rd implementation method, there is light shield maintaining body 11a the light shield for keeping light shield MA to keep Cylinder 21a, the deflector roll 93 of supporting light shield holding cylinder 21a, driven roller 94, the drive division 96 for driving light shield holding cylinder 21a.
Light shield holding cylinder 21a forms the light cover of the illumination region IR being configured with light shield MA.In the present embodiment, light Cover includes face (below, the title that line segment (bus) is obtained around axle (central shaft of the drum) rotation parallel with the line segment It is barrel surface).Barrel surface is, for example, outer peripheral face of the outer peripheral face of cylinder, cylinder etc..Light shield holding cylinder 21a by such as glass or Quartz etc. is constituted, and in the cylindrical shape of the thickness with regulation, its outer peripheral face (barrel surface) forms light cover.That is, in this embodiment party In formula, the illumination region IR on light shield MA bends to the cylinder planar of the radius of curvature R m for having regulation from center line.Light shield is protected Hold the part of the radial direction observation from light shield holding cylinder 21a and the pattern registration of light shield MA in a 21a, such as light shield holding cylinder Middle bodies of the 21a in Y direction in addition to two sides, has translucency relative to illuminating bundle EL1.
Light shield MA is made into very thin glass plate (such as μ of thickness 100~500 for example in the good short strip shape of flatness M) using the plane sheet material light shield for foring by light shield layers such as chromium the transmission-type of pattern on a face, it is made to copy light shield The outer peripheral face of holding cylinder 21a bends, and is used with winding (laminating) in the state of the outer peripheral face.Light shield MA have do not form figure The non-pattern forming region of case, is attached to light shield holding cylinder 21a in non-pattern forming region.Light shield MA can keep from light shield Cylinder 21a departs from.Light shield MA is wound in by transparent cylinder mother metal structure with the light shield M of first embodiment it is equally possible that replacing Into light shield holding cylinder 21a, and the outer peripheral face in the light shield holding cylinder 21a being made up of transparent cylinder mother metal is directly hidden using chromium etc. Photosphere draw to be formed mask pattern come it is integrated.In this case, light shield holding cylinder 21a also realizes the supporting member of light shield Function.
Deflector roll 93 and driven roller 94 extend along the Y direction parallel with the central shaft of light shield holding cylinder 21a.Deflector roll 93 And driven roller 94 is arranged to be rotated around the axle parallel with central shaft.On deflector roll 93 and the respective axial direction of driven roller 94 The external diameter of end is bigger than the profile of other parts, and the end is external with light shield holding cylinder 21a.In this way, deflector roll 93 and driven roller The 94 light shield MA for being arranged to not kept with light shield holding cylinder 21a are contacted.Driven roller 94 is connected with drive division 96.Driven roller 94 is led to Crossing to conduct the torque supplied from drive division 96 to light shield holding cylinder 21a makes the light shield holding cylinder 21a be rotated around central shaft.
Additionally, light shield maintaining body 11a have a deflector roll 93, but quantity be not limit, or two with On.Similarly, light shield maintaining body 11a have a driven roller 94, but quantity be not limit, or two with On.At least one of deflector roll 93 and driven roller 94 are configured in the inner side of light shield holding cylinder 21a, it is also possible to light shield holding cylinder Connect in 21a.In addition, in light shield holding cylinder 21a from the radial direction of light shield holding cylinder 21a observe when not with the pattern registration of light shield MA Part (two sides of Y direction) can have translucency relative to illuminating bundle EL1, it is also possible to without translucency.Separately Outward, one of deflector roll 93 and driven roller 94 or both can also be for example round table-like, and central shaft (rotary shaft) is with Heart axle is not parallel.
The light supply apparatus 13a of present embodiment has light source (omitting diagram) and lamp optical system ILa.Light optics System ILa has and each the multiple (example for correspondingly arranging in the Y-axis direction in multiple projection optical system PL1~PL6 Such as 6) lamp optical system ILa1~ILa6.Light source can use various light in the same manner as above-mentioned various light supply apparatus 13a Source.The Illumination Distribution of the illumination light projected from light source is homogenized, for example, distributed to multiple via light conducting members such as optical fiber and illuminated Optical system ILa1~ILa6.
Multiple lamp optical system ILa1~ILa6 have multiple optical components such as lens respectively.Multiple lamp optical systems ILa1~ILa6 has respectively：Such as integrated optics system, lens pillar, fly's-eye lens etc., using uniform Illumination Distribution Illuminating bundle EL1 irradiation illumination regions IR.In the present embodiment, multiple lamp optical system ILa1~ILa6 are configured at light shield The inner side of holding cylinder 21a.Multiple lamp optical system IL1~IL6 are kept from the inner side of light shield holding cylinder 21a by light shield respectively Cylinder 21a, illuminates to each illumination region on the light shield MA that the outer peripheral face of light shield holding cylinder 21a is kept.
The light that light supply apparatus 13a guiding is projected by lamp optical system ILa1~ILa6 from light source, the illumination light that will be guided Beam EL1 is from light shield holding cylinder 21a internal irradiations to light shield MA.Light supply apparatus 13 is using illuminating bundle EL1 with uniform brightness pair The part (illumination region IR) for the light shield MA that light shield maintaining body 11a is kept is illuminated.Additionally, light source can be only fitted to The inner side of light shield holding cylinder 21a, it is also possible to which configuration is in the outside of light shield holding cylinder 21a.In addition, light source can also be filled with exposure Put U3b points of other devices (external device (ED)) opened.
Exposure device U3b in the case where transmission-type light shield is used as light shield, also in the same manner as exposure device U3, U3a, The position for being set to be reached on plane of exposure best focus as described above with exposure relation of plane by will project image planes has Relation at two, can obtain effect similar to the above.
[the 4th implementation method]
Hereinafter, reference picture 19 is illustrated for the exposure device U3c of the 4th implementation method.Additionally, in order to avoid repeating Record, illustrated only for the part different from first embodiment, for the composition portion same with first embodiment Minute mark is noted with first embodiment identical reference to illustrate.Figure 19 is the exposure device for showing the 4th implementation method The integrally-built figure of (substrate board treatment).The exposure device U3 of first embodiment is by the light shield of cylindric reflection-type M is held in the structure of rotatable light shield holding cylinder 21, and the exposure device U3c of the 4th implementation method is by flat reflection Type light shield MB is held in the structure of moveable light shield maintaining body 11b.
In the exposure device U3c of the 4th implementation method, light shield maintaining body 11b has the plane light shield MB's of holding Light shield objective table 110, make light shield objective table 110 scanned along the X direction in the plane orthogonal with median plane CL movement movement Device (omits diagram).
Because the face P1 of the light shield MB of Figure 19 is substantially the plane parallel with X/Y plane, so the throwing reflected from light shield MB The chief ray of shadow light beam EL2 is vertical with X/Y plane.Therefore, from being illuminated to each illumination region IR1~IR6 on light shield MB Lamp optical system IL1~IL6 illuminating bundle EL1 chief ray be also configured as it is vertical with X/Y plane.
In the case where the chief ray of the illuminating bundle EL1 illuminated to light shield MB is vertical with X/Y plane, polarising beam splitter PBS is Brewster (Brewster) angle θ B to be incident to the incidence angle θ 1 of the chief ray of the illuminating bundle EL1 of quarter wave plate 41, And the chief ray mode vertical with X/Y plane of the illuminating bundle EL1 reflected by quarter wave plate 41 is configured.With the polarized light beam splitting The configuration change of device PBS, the configuration of light optics module ILM is also suitably changed.
In addition, in the case where the chief ray of the projected light beam EL2 reflected from light shield MB is vertical with X/Y plane, projection optics The angle of the first reflecting surface P3 of the first deflecting member 70 that first optical system 61 of module PLM has is set to, to coming from The projected light beam EL2 of polarising beam splitter PBS is reflected, and the projected light beam EL2 after reflection is entered by the first lens group 71 It is incident upon the first concave mirror 72.Specifically, by the first reflecting surface P3 of the first deflecting member 70 be set to substantially with the second optical axis BX2 (X/Y plane) is at 45 °.
In addition, in the 4th implementation method, in the same manner as Fig. 2 above, when in XZ viewed in plan, from light shield MB The central point of illumination region IR1 (and IR3, IR5) set to the girth of the central point of illumination region IR2 (and IR4, IR6) It is set to, with the central point of the view field PA1 (and PA3, PA5) from the substrate P for copying bearing-surface P2 to the second projected area The girth of the central point of domain PA2 (and PA4, PA6) is substantially equal.
In the exposure device U3c of Figure 19, slave control device 16 also controls the mobile device of light shield maintaining body 11b (line motor of scan exposure, executing agency of fine motion etc.), the rotation with substrate supporting cylinder 25 synchronously drives light shield Objective table 110.In the exposure device U3c of Figure 19, in the +X direction synchronizing moving to light shield MB and after carrying out scan exposure, The action (backrush) of the initial position for needing to be back to -X direction into enforcement light shield MB.Therefore, advise substrate supporting cylinder 25 Continuously rotation comes at the uniform velocity constantly in the case of carrying substrate P, during light shield MB carries out rolling back action, not in base constant speed degree Pattern exposure is carried out on plate P, but panel pattern dispersedly (discretely) is formed on the carrying direction of substrate P.But, In practical application, it is assumed that the speed (being herein peripheral speed) of the substrate P in scan exposure and the speed of light shield MB is 50~ 100mm/s, if therefore can be contracted with the maximum speed driving light shield objective table 110 of such as 500mm/s in light shield MB backrush Blank between the small panel pattern being formed in substrate P on direction is carried.
Hereinafter, projection image planes and base of the reference picture 20 for the pattern of the light shield of the exposure device U3c of the 4th implementation method The exposure relation of plane of plate is illustrated.Figure 20 is the exposure relation of plane of the projection image planes with substrate of the pattern for showing light shield Explanatory diagram.
The pattern that exposure device U3c forms light shield MB by being imaged projected light beam EL2 by projection optical system PL Projection image planes Sm2.Projection image planes Sm2 is the position of the pattern imaging of light shield MB, is the position for reaching optimum focusing.Herein, light Cover MB is configured to plane as described above.Thus, projection image planes Sm2 is also plane (being straight line in ZX planes).In addition, exposure The surface of the substrate P of device U3c turns into plane of exposure Sp.Herein, plane of exposure Sp refers to the surface of substrate P.Substrate P is as described above It is held on the substrate supporting of drum cylinder 25.Thus, plane of exposure Sp becomes curved surface of the radius of curvature for Rp (in ZX planes It is curve).In addition, the direction orthogonal with scan exposure direction of plane of exposure Sp turns into the axle of curved surface.Therefore, as shown in figure 20, Plane of exposure Sp turns into the curve bent relative to scan exposure direction.Plane of exposure Sp is on the scan exposure direction of view field PA Exposed width A in the variable quantity of position be Δ P.Projection image planes Sm2 is plane.Therefore, projection image planes Sm2 is in view field The variable quantity of the position in exposed width A on the scan exposure direction of PA is 0.Herein, exposure device U3c is by plane of exposure Sp phases Position for projection image planes Sm2 is set to actual exposure face Spa.Actual exposure face Spa on scan exposure direction with projection image Face Sm2 intersects at two different positions Pa2, Pb2.Additionally, exposure device U3c can be by adjusting projection optical system PL's The position of each optical component, or adjust light using the one party in light shield maintaining body 11b and base supporting mechanism 12 Interval between cover MB and substrate P, so as to change position of the plane of exposure relative to projection image planes Sm2.
Exposure device U3c makes projection image planes Sm2 intersecting in different two positions Pa2, Pb2 from actual exposure face Spa, by This, in exposed width A, the position Pa2 on the Spa of actual exposure face, focus state is changed into optimum focusing, in actual exposure face Position Pb2 on Spa, focus state is changed into optimum focusing.
Even if the surface of light shield MB is set to plane by exposure device U3c, the surface of substrate P is set to drum, Also can assign and mask pattern is projected on scan exposure obtained from substrate P side in the same manner as exposure device U3, U3a, U3b Projection image planes Sm2 on direction is poor with drum with the plane of exposure Sp of the substrate P being exposed.And, the throwing of exposure device U3c Image plane Sm2 intersects at two different positions Pa2, Pb2 from actual exposure face Spa, in two different positions, plane of exposure Focus state reaches optimum focusing.
Thus, exposure device U3c can also utilize the rotary motion of light shield holding cylinder 21, and on scan exposure direction Focus state is set continuously to change in exposed width A, and, it is prevented from becoming relative to the image contrast of actual focusing Change.In addition, exposure device U3c can obtain the various effects same with exposure device U3.Even if in this way, will only project image planes In the case of curved surface being set to one of plane of exposure (surface of substrate P), it is also possible to obtain and image planes and plane of exposure will be projected Both of which is set to the same effect of situation of curved surface.
Herein, exposure device U3c can obtain the defocus width changed in arc-shaped in exposed width A according to following formula Δ, following formula is by the circular cylinder radius r of the projection image planes Sm2 on scan exposure direction of the substrate P of above-mentioned expression formula1It is set to 0 obtains.
Δ=r2-((r2 2)-(A/2)2)1/2
Herein, in exposure device U3c, because the radius of curvature of the projection image planes Sm2 of mask pattern is ∞, so exposing Defocus properties Cm in optical width A in arc-shaped change only can just be obtained by formula 3 above.That is, in the feelings of exposure device U3c Defocus properties Cm (=Δ Rp) under condition is obtained according to following formula.
[mathematical expression 5]
Additionally, being kept with curved surface in the light shield maintaining body and base supporting mechanism of the exposure device of present embodiment A side as the first supporting member, the side supported using curved surface or plane is used as the second supporting member.
＜ exposure methods ＞
Hereinafter, reference picture 21, illustrate for exposure method.Figure 21 is the flow chart for showing exposure method.
In the exposure method shown in Figure 21, first, substrate P is supported on bearing-surface P2 using base supporting mechanism (step S101), light shield M (step S102) is supported using light shield maintaining body on the P1 of face.Thus, light shield M turns into substrate P Aspectant state.Additionally, the order of step S101 and step S102 can also be overturned.In addition, certain in face P1, bearing-surface P2 , used as the first face, the opposing party is used as the second face for one side.First face is the shape into cylinder planar with regulation curvature bending.
Then, focal position (step S103) of the adjustment relative to plane of exposure.Specifically, on the surface for being set in substrate P On view field PA exposed width A in, focal position is set on scan exposure direction comprising two optimum focusings The position of position.
After the completion of the adjustment of focal position, start to make substrate P and light shield M relatively move on scan exposure direction (turn It is dynamic) (step S104).That is, using at least one party in base supporting mechanism and light shield maintaining body, proceeding by makes substrate P The action moved up in scan exposure side with least one party in light shield M.
After relative movement is started, start to projection projected light beam (step S105) in view field PA.That is, autogamy in future The light beam for being placed in the pattern of the light shield of the illumination region IR of illumination light is projeced into the view field PA for being configured with substrate P.Thus, scheme Exposure method shown in 21 is incident upon on scan exposure direction comprising optimal at two on the plane of exposure of substrate P to view field The light beam of focal position.
Exposure method as described above, the light beam of focal position has been have adjusted by projection, can be in the plane of exposure of substrate On, the light beam for including best focus position at two on scan exposure direction is projected to view field.On obtaining The various effects stated.Additionally, in the present embodiment, illustrate to adjust the situation of focal position, but can also be by device Setting, making on scan exposure direction the position of best focus position at comprising two turns into focal position.
＜ device making methods ＞
Hereinafter, reference picture 22, illustrate to device making method.Figure 22 is shown using the device of device inspection apparatus The flow chart of manufacture method.
In the device making method shown in Figure 22, first, such as display based on self-emission devices such as organic EL is carried out The function and performance design of panel, circuit pattern, the wiring pattern (step S201) needed using the design such as CAD.Then, it is based on Light shield M (step S202) of the layer amount needed for being made by the pattern of each layer in the various layers of the designs such as CAD.In addition, Prepare to be wound with the supply as the flexible substrate P (resin film, metal foil film, plastics etc.) of the base material of display panel in advance With volume FR1 (step S203).Additionally, the substrate P of the web-like prepared in step S203 can be as needed to its surface The substrate for being modified, the substrate for being formed with basalis (such as minute asperities based on impressing mode) in advance, are laminated in advance There is the substrate of photosensitive functional membrane or hyaline membrane (insulating materials).
Then, formed in substrate P by constitute display panel device electrode, wiring, dielectric film, TFT (partly lead by film Body) etc. composition backsheet layer, and form luminous based on self-emission devices such as organic EL in the way of being laminated on the backboard Layer (display pixel portion) (step S204).In step S204, the exposure illustrated in each implementation method above is used Any one of device U3, U3a, U3b, U3c are exposed treatment.Also include carrying out photoresist layer in exposure-processed The conventional photo-mask process of exposure, but also include being coated with substitution photoresist the substrate of photonasty silane coupling material P carries out pattern exposure and is formed on the surface using hydrophily and hydrophobic pattern, or for electroless plating to sense The catalyst of photosensitiveness carries out the operation of pattern exposure.The developing procedure of photoresist is carried out in conventional photo-mask process, Implementation forms the wet type operation of the pattern (wiring, electrode etc.) of metal film in non-electrolytic plating method, or utilization contains silver nanoparticle Printing process that electrically conductive ink of particle etc. draws a design etc..
Then, base is cut by each display panel device being continuously manufactured by the substrate P of strip by volume mode Plate P, stickup protective film (environment reply barrier layer) and/or colored filter etc. on the surface of each display panel device, from And assembly device (step S205).Then, carry out inspection operation, check display panel device whether normally function, be It is no to meet desired performance and characteristic (step S206).By the above, display panel (flexible display) can be manufactured.
Description of reference numerals
1 device inspection apparatus
2 substrate feeding devices
4 substrate retracting devices
5 host control devices
11 light shield maintaining bodies
12 base supporting mechanisms
13 light supply apparatuses
16 slave control devices
21 light shield holding cylinder
25 substrate supportings cylinder
31 light sources
32 light conducting members
41 quarter wave plates
51 collimation lenses
52 fly's-eye lenses
53 collector lenses
54 cylindrical lenses
55 illuminated field diaphragms
56 relay lens
61 first optical systems
62 second optical systems
63 perspective view diaphragms
64 focus amendment optical components
65 as skew optical component
66 multiplying power amendment optical components
67 rotation correction mechanisms
68 polarization adjustment mechanisms
70 first deflecting members
71 first lens groups
72 first concave mirrors
80 second deflecting members
81 second lens groups
82 second concave mirrors
110 light shield objective tables
P substrates
FR1 supplies are rolled up
FR2 recovery is rolled up
U1~Un processing units
U3 exposure devices (substrate board treatment)
M light shields
MA light shields
AX1 first axles
The axles of AX2 second
P1 light covers
P2 bearing-surfaces
P7 intermediate image planes
EL1 illuminating bundles
EL2 projected light beams
Rm radius of curvature
Rp radius of curvature
CL median planes
PBS polarising beam splitters
IR1~IR6 illumination regions
IL1~IL6 lamp optical systems
ILM light optics modules
PA1~PA6 view fields
PLM projection optics modules

Claims (10)

1. a kind of exposure method, the light beam of the pattern from light shield is projected to the throwing for being configured with substrate via projection optical system Shadow zone domain, wherein, the light shield is configured at the illumination region of illumination light, and the exposure method is characterised by, including：
In a side region in the illumination region and the view field, with along specifying curvature bending into cylinder planar The mode in the first face support the side in the light shield and the substrate；
In the opposing party region in the illumination region and the view field, propped up in the way of along the second face of regulation Hold the opposing party in the light shield and the substrate；
The side in the light shield and the substrate that first face supported is rotated along first face, make first face A side in the light shield and the substrate that are supported moves up in scan exposure side；With
On the plane of exposure of the substrate, the light beam projection of best focus position at two will be included on the scan exposure direction To the view field.
2. a kind of exposure method, the light beam that autogamy in future is placed in the pattern of the light shield of illumination region is projected via projection optical system To the view field of the plane of exposure for being configured at substrate, it is characterised in that including：
In a side region in the illumination region and the view field, with along specifying curvature bending into cylinder planar The mode in the first face support the side in the light shield and the substrate；
In the opposing party region in the illumination region and the view field, propped up in the way of along the second face of regulation Hold the opposing party in the light shield and the substrate；With
Make the side in the light shield and the substrate being supported by along first face in rotary moving along first face, The opposing party in the light shield and the substrate being supported by along second face is set to be moved up in scan exposure side,
During the scan exposure of the movement based on the light shield and the substrate, by first face, second face, described Projection optical system is set as, two on the light beam scan exposure direction respectively in the view field separate Place, best focus are reached on the plane of exposure of the substrate.
3. exposure method as claimed in claim 1 or 2, it is characterised in that
The light beam that will be projected by the projection optical system the view field on the scan exposure direction Midpoint defocus amount be set to Δ and the depth of focus be set to DOF in the case of, to meet 0.5<The mode of Δ/DOF≤3, point The projection optical system, first face, second face are not set.
4. exposure method as claimed in claim 3, it is characterised in that
So as to meet the mode of 1≤Δ/DOF in relation between the defocus amount Δ and the depth of focus DOF, institute is set State projection optical system, first face, second face.
5. exposure method as claimed in claim 3, it is characterised in that
The projection image planes and the base of the pattern of the light shield are projected under best focus by the projection optical system The difference of the distance in a focus direction of the plane of exposure of plate is set to, with the view field on the scan exposure direction The center of width symmetrically change in line on the scan exposure direction for axle.
6. exposure method as claimed in claim 5, it is characterised in that
On first face, the light shield is set to have held the light shield into cylinder planar twelve Earthly Branches with the regulation curvature bending,
The substrate is supported with second face.
7. exposure method as claimed in claim 5, it is characterised in that
On first face, the substrate is set to have held the substrate into cylinder planar twelve Earthly Branches with the regulation curvature bending,
The light shield is supported with second face.
8. exposure method as claimed in claims 6 or 7, it is characterised in that
Second face into cylinder planar and supports the substrate with one party in the light shield with the curvature bending that specifies.
9. exposure method as claimed in claim 5, it is characterised in that
First face is set so as to the song apart specified with the first axle of the light shield holding cylinder rotated around first axle The outer peripheral face of rate radius, the pattern of the light shield is formed with the outer peripheral face of the light shield holding cylinder.
10. exposure method as claimed in claim 9, it is characterised in that
The substrate is the flexible sheet material in the direction that the scan exposure direction is set to side long,
Second face is set so as to the substrate supporting cylinder around the second axle rotation abreast configured with the first axle The outer peripheral face of the radius of curvature apart specified with second axle,
Using the substrate supporting cylinder periphery surface bearing described in flexible sheet material.
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