CN106784387A - A kind of Organic Light Emitting Diode, display base plate and display device - Google Patents
A kind of Organic Light Emitting Diode, display base plate and display device Download PDFInfo
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- CN106784387A CN106784387A CN201710028579.6A CN201710028579A CN106784387A CN 106784387 A CN106784387 A CN 106784387A CN 201710028579 A CN201710028579 A CN 201710028579A CN 106784387 A CN106784387 A CN 106784387A
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- emitting diode
- light emitting
- organic light
- layer
- negative electrode
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
- H10K50/824—Cathodes combined with auxiliary electrodes
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Abstract
The present invention provides a kind of Organic Light Emitting Diode, display base plate and display device, and the Organic Light Emitting Diode includes：Anode, organic layer, negative electrode and it is arranged at and the cathodic modification layer between the negative electrode and the organic layer, the cathodic modification layer can reduce the interface potential barrier between negative electrode and organic layer, improve negative electrode to the electron injection ability of organic layer, so as to improve the efficiency of Organic Light Emitting Diode, Organic Light Emitting Diode power consumption is reduced.
Description
Technical field
The present invention relates to Organic Light Emitting Diode technical field, more particularly to a kind of Organic Light Emitting Diode, display base plate
And display device.
Background technology
At present, OLED (Organic Light Emitting Diode) device is generally made up of anode, organic layer and negative electrode (Cathode) etc..
Because Presence of an interface potential barrier between negative electrode and organic layer, electron injection ability be not high, the efficiency and power consumption of OLED are have impact on.
The content of the invention
In view of this, the present invention provides a kind of Organic Light Emitting Diode, display base plate and display device, existing for solving
Organic light emitting diode device negative electrode and organic layer between Presence of an interface potential barrier, electron injection ability is high, have impact on
The efficiency of machine LED device and the problem of power consumption.
In order to solve the above technical problems, the present invention provides a kind of Organic Light Emitting Diode, including：Anode, organic layer and the moon
Pole, it is characterised in that also include：It is arranged at and is repaiied with the cathodic modification layer between the negative electrode and the organic layer, the negative electrode
Decorations layer can reduce the interface potential barrier between negative electrode and organic layer.
Preferably, the cathodic modification layer is formed using the dopant material of metal and metal fluoride.
Preferably, in the dopant material of metal and metal fluoride, doping ratio the mixing higher than metal fluoride of metal
Miscellaneous ratio.
Preferably, the thickness of the cathodic modification layer is 2~5nm.
Preferably, the cathodic modification layer is formed using metal fluoride.
Preferably, the thickness of the metal fluoride is 0.5nm~1.5nm.
Preferably, the metal is the following combination of any one or more：Cs、Rb、K、Sr、Yb、Ce、Pr、Sm、Na、
Eu, Ba, Ca, Li, Tb, Ge or Y.
Preferably, the metal fluoride is the following combination of any one or more：LiF, NaF, KF, RbF or CsF.
The present invention also provides a kind of organic light-emitting diode display substrate, including above-mentioned Organic Light Emitting Diode.
The present invention also provides a kind of organic LED display device, including above-mentioned organic light-emitting diode display base
Plate.
Above-mentioned technical proposal of the invention has the beneficial effect that：
Increase cathodic modification layer between the negative electrode and organic layer of Organic Light Emitting Diode, for reducing negative electrode and organic layer
Between interface potential barrier, improve negative electrode to the electron injection ability of organic layer, so as to improve the efficiency of Organic Light Emitting Diode, drop
Low Organic Light Emitting Diode power consumption.
Brief description of the drawings
Fig. 1 is the structural representation of the Organic Light Emitting Diode of the embodiment of the present invention one；
Fig. 2 is the structural representation of the Organic Light Emitting Diode of the embodiment of the present invention two.
Specific embodiment
To make the purpose, technical scheme and advantage of the embodiment of the present invention clearer, below in conjunction with the embodiment of the present invention
Accompanying drawing, the technical scheme to the embodiment of the present invention is clearly and completely described.Obviously, described embodiment is this hair
Bright a part of embodiment, rather than whole embodiments.Based on described embodiments of the invention, ordinary skill
The every other embodiment that personnel are obtained, belongs to the scope of protection of the invention.
Unless otherwise defined, technical term used herein or scientific terminology should be in art of the present invention and have
The ordinary meaning that the personage of general technical ability is understood.Used in present patent application specification and claims " the
One ", " second " and similar word are not offered as any order, quantity or importance, and are used only to distinguish different
Part.Equally, the similar word such as " one " or " " does not indicate that quantity is limited yet, but expression has at least one.
The similar word such as " connection " or " connected " is not limited to physics or machinery connection, and can be including electrical
Connection, either directly still indirectly." on ", D score, "left", "right" etc. be only used for representing relative position relation, work as quilt
After the absolute position of description object changes, then the relative position relation also correspondingly changes.
It is Presence of an interface potential barrier, electron injection between the negative electrode and organic layer that solve existing organic light emitting diode device
Ability is not high, have impact on the efficiency of organic light emitting diode device and the problem of power consumption, and the embodiment of the present invention provides a kind of organic
Light emitting diode, including：Anode, organic layer and negative electrode, it is characterised in that also include：It is arranged at and the negative electrode and described has
Cathodic modification layer between machine layer, the cathodic modification layer can reduce the interface potential barrier between negative electrode and organic layer.
In the embodiment of the present invention, cathodic modification layer is increased between the negative electrode and organic layer of Organic Light Emitting Diode, be used for
The interface potential barrier between negative electrode and organic layer is reduced, negative electrode to the electron injection ability of organic layer is improved, so as to improve organic hair
The efficiency of optical diode, reduces Organic Light Emitting Diode power consumption.
In the embodiment of the present invention, it is preferable that negative electrode can be made of metal or metal alloy material, such as Mg, Ag are closed
Gold, Ca, Al alloy, or Li, Al alloy etc..
Certainly, in some other embodiment of the invention, negative electrode can also be using transparent oxide conductive materials such as ITO
It is made.
In the embodiment of the present invention, the organic layer, can also be including appointing in following film layer in addition to luminescent layer (EML)
One or more of meaning：Hole injection layer (HIL), hole transmission layer (HTL), electronic barrier layer (EBL), electron transfer layer (ETL)
With electron injecting layer (EIL).
Preferably, the organic layer includes：Electron injecting layer and/or electron transfer layer, electron injecting layer and electric transmission
Layer can improve negative electrode to the electron injection ability of organic layer.
In the embodiment of the present invention, the cathodic modification layer can be made of polytype conductive material, as long as can
The interface potential barrier reduced between negative electrode and organic layer is improved, negative electrode to the electron injection ability of organic layer is improved.
Preferably, metal fluoride, metal are at least included in the material that the cathodic modification layer in the embodiment of the present invention is used
Fluoride can occur dissociation reaction with negative electrode, organic layer, generate free radical anion, while interface dipole can also be formed, reduce
Interface potential barrier between negative electrode and organic layer, improves negative electrode to the electron injection ability of organic layer.
In one embodiment of this invention, the cathodic modification layer can be formed only with metal fluoride, metal pentafluoride
Thing is in the case of thinner thickness, it may have electric conductivity, it is preferable that in the embodiment of the present invention, the thickness of the metal fluoride
It is 0.5nm~1.5nm to spend.
Preferably, the metal fluoride can be the combination of any one or more in following material：LiF、NaF、
KF, RbF or CsF.
In another embodiment of the invention, the cathodic modification layer can be using metal and the doping material of metal fluoride
Material is formed.
The metal can be metal of the work function less than predetermined threshold value, metal of such as work function less than 3.1eV, work content
The relatively low metal of number can reduce the potential barrier between negative electrode and organic layer, improve negative electrode to the electron injection ability of organic layer.
Preferably, the metal can be the combination of any one or more in following material：Cs、Rb、K、Sr、Yb、
Ce, Pr, Sm, Na, Eu, Ba, Ca, Li, Tb, Ge or Y.
Preferably, the metal fluoride can be the combination of any one or more in following material：LiF、NaF、
KF, RbF or CsF.
When cathodic modification layer is formed using the dopant material of metal and metal fluoride, metal and metal fluoride are mixed
In miscellaneous material, the doping ratio of the doping ratio higher than metal fluoride of metal, the ratio of the metal fluoride of doping can not mistake
Height, can otherwise influence the electric conductivity of cathodic modification layer.
Preferably, the thickness of the cathodic modification layer is 2~5nm, and the thinner thickness of cathodic modification layer has from without influence
The integral thickness of machine light emitting diode.
The embodiment of the present invention also provides a kind of organic light-emitting diode display substrate, including above-mentioned Organic Light Emitting Diode.
The embodiment of the present invention also provides a kind of organic LED display device, including above-mentioned Organic Light Emitting Diode shows
Show substrate.
The embodiment of the present invention also provides a kind of preparation method of Organic Light Emitting Diode, for making above-mentioned organic light emission two
Pole pipe.
Below in conjunction with drawings and Examples, specific embodiment of the invention is described in further detail.Following reality
Example is applied for illustrating the present invention, but is not limited to the scope of the present invention.
Embodiment one
Fig. 1 is refer to, Fig. 1 is the structural representation of the Organic Light Emitting Diode of the embodiment of the present invention one, the organic light emission
Diode includes：Anode, organic layer, cathodic modification layer and negative electrode, wherein, organic layer includes：Hole injection layer, hole transport
Layer, electronic barrier layer, luminescent layer, electron transfer layer and electron injecting layer.
In the embodiment of the present invention, anode is formed using ITO materials, and negative electrode is formed using metal or metal alloy, and negative electrode is repaiied
Decorations layer is formed using the dopant material of metal and metal fluoride, and the thickness of cathodic modification layer is 2~5nm.
Cathodic modification layer can reduce the interface potential barrier between negative electrode and electron injecting layer, improve negative electrode to electron injecting layer
Electron injection ability, so as to improve the efficiency of Organic Light Emitting Diode, reduce Organic Light Emitting Diode power consumption.
Embodiment two
Fig. 2 is refer to, Fig. 2 is the structural representation of the Organic Light Emitting Diode of the embodiment of the present invention two, the organic light emission
Diode includes：Anode, organic layer, cathodic modification layer and negative electrode, wherein, organic layer includes：Hole injection layer, hole transport
Layer, electronic barrier layer, luminescent layer and electron transfer layer.
In the embodiment of the present invention, anode is formed using ITO materials, and negative electrode is formed using metal or metal alloy, and negative electrode is repaiied
Decorations layer is formed using the dopant material of metal and metal fluoride, and the thickness of cathodic modification layer is 2~5nm.
Cathodic modification layer can reduce the interface potential barrier between negative electrode and electron transfer layer, improve negative electrode to electron transfer layer
Electron injection ability, so as to improve the efficiency of Organic Light Emitting Diode, reduce Organic Light Emitting Diode power consumption.
In the various embodiments described above, Organic Light Emitting Diode can also be included positioned at the anti-of the side away from organic layer of anode
Penetrate metal level.Organic Light Emitting Diode can also include the cathodic protection layer positioned at the side away from organic layer of negative electrode.
The above is the preferred embodiment of the present invention, it is noted that for those skilled in the art
For, on the premise of principle of the present invention is not departed from, some improvements and modifications can also be made, these improvements and modifications
Should be regarded as protection scope of the present invention.
Claims (10)
1. a kind of Organic Light Emitting Diode, including：Anode, organic layer and negative electrode, it is characterised in that also include：It is arranged at and institute
The cathodic modification layer between negative electrode and the organic layer is stated, the cathodic modification layer can reduce the boundary between negative electrode and organic layer
Face potential barrier.
2. Organic Light Emitting Diode according to claim 1, it is characterised in that the cathodic modification layer uses metal and gold
The dopant material for belonging to fluoride is formed.
3. Organic Light Emitting Diode according to claim 2, it is characterised in that the dopant material of metal and metal fluoride
In, the doping ratio of the doping ratio higher than metal fluoride of metal.
4. the Organic Light Emitting Diode according to Claims 2 or 3, it is characterised in that the thickness of the cathodic modification layer is 2
~5nm.
5. Organic Light Emitting Diode according to claim 1, it is characterised in that the cathodic modification layer uses metal pentafluoride
Thing is formed.
6. Organic Light Emitting Diode according to claim 5, it is characterised in that the thickness of the metal fluoride is
0.5nm~1.5nm.
7. Organic Light Emitting Diode according to claim 2, it is characterised in that the metal for it is following any one or it is many
The combination planted：Cs, Rb, K, Sr, Yb, Ce, Pr, Sm, Na, Eu, Ba, Ca, Li, Tb, Ge or Y.
8. the Organic Light Emitting Diode according to claim 2 or 5, it is characterised in that the metal fluoride is following
The combination that one or more of meaning：LiF, NaF, KF, RbF or CsF.
9. a kind of organic light-emitting diode display substrate, it is characterised in that including organic as described in claim any one of 1-8
Light emitting diode.
10. a kind of organic LED display device, it is characterised in that including organic light emission as claimed in claim 9 two
Pole pipe display base plate.
Priority Applications (1)
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| CN201710028579.6A CN106784387A (en) | 2017-01-16 | 2017-01-16 | A kind of Organic Light Emitting Diode, display base plate and display device |
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| CN201710028579.6A CN106784387A (en) | 2017-01-16 | 2017-01-16 | A kind of Organic Light Emitting Diode, display base plate and display device |
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Cited By (4)
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| CN107425130A (en) * | 2017-07-27 | 2017-12-01 | 苏州大学 | Preparation method of inorganic quantum dot light-emitting diode device |
| CN110085765A (en) * | 2019-04-28 | 2019-08-02 | 深圳市华星光电半导体显示技术有限公司 | Display panel and preparation method thereof |
| CN110931650A (en) * | 2019-11-22 | 2020-03-27 | 深圳市华星光电半导体显示技术有限公司 | Organic light-emitting diode device, display panel and preparation method of display panel |
| CN113078271A (en) * | 2020-01-03 | 2021-07-06 | 上海和辉光电有限公司 | Organic electroluminescent device and display device |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107425130A (en) * | 2017-07-27 | 2017-12-01 | 苏州大学 | Preparation method of inorganic quantum dot light-emitting diode device |
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