CN105914228A - OLED device and OLED display - Google Patents
OLED device and OLED display Download PDFInfo
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- CN105914228A CN105914228A CN201610390681.6A CN201610390681A CN105914228A CN 105914228 A CN105914228 A CN 105914228A CN 201610390681 A CN201610390681 A CN 201610390681A CN 105914228 A CN105914228 A CN 105914228A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2101/00—Properties of the organic materials covered by group H10K85/00
- H10K2101/10—Triplet emission
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/15—Hole transporting layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/18—Carrier blocking layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
- H10K59/351—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels comprising more than three subpixels, e.g. red-green-blue-white [RGBW]
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/86—Series electrical configurations of multiple OLEDs
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Abstract
The invention provides an OLED device and an OLED display. By using the OLED device of the invention, two or more luminescence units are connected in series so that luminescence intensity of the OLED device can be multiplied and a display effect of the OLED display is increased. The OLED display comprises the OLED device. Through carrying out series connection on the two or more luminescence units, the luminescence intensity is multiplied, which is good for motivating a quantum dot film to emit red and green light so as to obtain three primary color light of red, green and blue with high color saturation, and a color gamut of the OLED display is increased. Simultaneously, because luminescent layers corresponding to red, green and blue pixels in the OLED display are blue luminescent layers, a precision metal mask plate is avoided from using and resolution of the OLED display is increased.
Description
Technical field
The present invention relates to Display Technique field, particularly relate to a kind of OLED and OLED display.
Background technology
OLED (Organic Light-Emitting Diode, Organic Light Emitting Diode) display, also referred to as
Display of organic electroluminescence, is a kind of emerging panel display apparatus, due to its have preparation technology simple,
Low cost, low in energy consumption, luminosity is high, operating temperature wide accommodation, volume are frivolous, fast response time,
And be easily achieved colored display and large screen display, be easily achieved and match with driver ic, easily
In realizing the advantages such as Flexible Displays, thus have broad application prospects.
OLED according to type of drive can be divided into passive matrix OLED (Passive Matrix OLED,
PMOLED) and the big class of active array type OLED (Active Matrix OLED, AMOLED) two,
I.e. direct addressin and film transistor matrix addresses two classes.Wherein, AMOLED has the arrangement in array
Pixel, belong to actively display type, luminous efficacy is high, and the large scale being typically used as fine definition shows
Device.
Small-size display (such as mobile phone, panel computer) uses the ratio of displayer more at present
Come the highest, its technology path be use precision metallic mask plate (Fine Metal Mask, FMM) prepare red,
Luminescent layer green, blue, constitutes red, green, blue sub-pixel, thus obtains three sub-pixels of RGB (Side side by side
By Side) the AMOLED display screen of formula.But it is more and more higher to resolution requirement to be as market, it is subject to
The precision of precision metallic mask plate limits, and this technology path also seems more and more unable to do what one wishes, it is impossible to meet
The market demand to resolution.
It addition, the luminous intensity of existing OLED is relatively low, it is unfavorable for that improving OLED shows equally
The display effect of device, Fig. 1 is the structural representation of a kind of existing common top emitting Nan dian Yao device,
This top emitting Nan dian Yao device includes that the total reflection anode 100 set gradually from top to bottom, hole are injected
Layer 200, hole transmission layer 300, electronic barrier layer 400, blue light-emitting 500, electron transfer layer 600,
And semitransparent cathode 700；Described electronic barrier layer 400, blue light-emitting 500 and electron transfer layer 600
Constitute a blue light emitting unit, owing to this top emitting Nan dian Yao device only has a blue light emitting list
Unit, therefore luminous intensity is relatively low so that the display effect of OLED display is poor.
Summary of the invention
It is an object of the invention to provide a kind of OLED, luminous intensity can be improved, be conducive to improving
The display effect of OLED display.
The present invention also aims to provide a kind of OLED display, comprise above-mentioned OLED, can carry
High luminous intensity, beneficially excitation quantum point thin film send red, green glow, obtain the red green of high color saturation
Primary colors light, improves the colour gamut of OLED display, is conducive to improving the resolution of OLED display simultaneously
Rate.
For achieving the above object, present invention firstly provides a kind of OLED, including setting the most successively
The anode put, hole injection layer, hole transmission layer, the first luminescence unit, charge generation layer, second
Light unit and negative electrode；
Wherein, described first luminescence unit includes setting gradually from top to bottom the first electronic barrier layer,
One luminescent layer and the first electron transfer layer, described second luminescence unit includes setting gradually from top to bottom
Second electronic barrier layer, the second luminescent layer and the second electron transfer layer；
Described charge generation layer includes that the electronics set gradually from top to bottom produces layer and hole produces layer.
Described first luminescent layer and the second luminescent layer are blue light-emitting, the material of described blue light-emitting
Including 4,4 '-two (2,2)-diphenylethyllene-1,1 biphenyl；The thickness of described first luminescent layer is 5nm～40nm；
The thickness of described second luminescent layer is 5nm～40nm.
Described anode is total reflection anode, and described negative electrode is semitransparent cathode；
Described anode is the composite bed being made up of two indium tin oxide layer clamping one metal levels；Described tin indium oxide
The thickness of layer is 5nm～50nm；The thickness of described metal level is 80nm～1000nm；
The material of described negative electrode includes that lithium, lithium alloy, magnesium, magnesium alloy, calcium, calcium alloy, strontium, strontium close
Gold, lanthanum, lanthanum alloy, cerium, cerium alloy, europium, europium alloy, ytterbium, ytterbium alloy, aluminum, aluminium alloy, caesium,
The combination of one or more in cesium alloy, rubidium and rubidium alloy；The thickness of described negative electrode is 5nm～30nm.
Described electronics produces the material of layer and includes six nitrile six azepine benzophenanthrenes；Described hole produces the material of layer
Including N, N '-diphenyl-N, N '-(1-naphthyl)-1,1 '-biphenyl-4,4 '-diamidogen；Described electronics produces the thickness of layer
5nm～50nm；It is 5nm～50nm that described hole produces the thickness of layer.
The material of described hole injection layer includes six nitrile six azepine benzophenanthrenes；The thickness of described hole injection layer
For 5nm～50nm；
The material of described hole transmission layer includes N, N '-diphenyl-N, N '-(1-naphthyl)-1,1 '-biphenyl-4,4 '-two
Amine；The thickness of described hole transmission layer is 5nm～50nm；
The material of described first electronic barrier layer and the second electronic barrier layer all includes 4,4', 4 " and-three (carbazole-9-
Base) triphenylamine；The thickness of described first electronic barrier layer and the second electronic barrier layer is 5nm～30nm；
Described first electron transfer layer includes two structure sheafs overlapped, wherein the material bag of a structure sheaf
Include 4,7-diphenyl-1,10-phenanthrene quinoline, the material of another structure sheaf includes 4,7-diphenyl-1,10-phenanthrene quinoline with
The mixture of lithium；The thickness of described first electron transfer layer is 5nm～50nm；
The material of described second electron transfer layer includes 4,7-diphenyl-1,10-phenanthrene quinoline；Described second electronics
The thickness of transport layer is 5nm～50nm.
The present invention also provides for a kind of OLED display, including TFT substrate, is located in described TFT substrate
OLED, be located at the encapsulation cover plate above described OLED and be located at described encapsulation cover plate with
Packaging adhesive material between OLED；
Anode that described OLED includes setting gradually from top to bottom, hole injection layer, hole transmission layer,
First luminescence unit, charge generation layer, the second luminescence unit and negative electrode；
Wherein, described first luminescence unit includes setting gradually from top to bottom the first electronic barrier layer,
One luminescent layer and the first electron transfer layer, described second luminescence unit includes setting gradually from top to bottom
Second electronic barrier layer, the second luminescent layer and the second electron transfer layer；Described first luminescent layer and second
Luminescent layer is blue light-emitting；Described charge generation layer includes that the electronics set gradually from top to bottom produces
Layer and hole produce layer；
Described encapsulation cover plate includes cover plate and is located on described cover plate towards described OLED side
Quantum dot film；
Described quantum dot film includes red pixel cell, green pixel cell and blue pixel cells,
Described red pixel cell is red quantum point thin film, and described green pixel cell is green quantum dot film,
Described blue pixel cells is transparent material or through hole；
After applying voltage, described OLED sends blue light, and this blue light excites the described red pixel list of composition
The red quantum point thin film of unit sends HONGGUANG, excites the green quantum dot constituting described green pixel cell thin
Film sends green glow, appears blue light through described blue pixel cells, thus realizes red green blue tricolor and show.
The material of described blue light-emitting includes 4,4 '-two (2,2)-diphenylethyllene-1,1 biphenyl；Described first
The thickness of photosphere is 5nm～40nm；The thickness of described second luminescent layer is 5nm～40nm.
Described anode is total reflection anode, and described negative electrode is semitransparent cathode；
Described anode is the composite bed being made up of two indium tin oxide layer clamping one metal levels；Described tin indium oxide
The thickness of layer is 5nm～50nm；The thickness of described metal level is 80nm～1000nm；
The material of described negative electrode includes that lithium, lithium alloy, magnesium, magnesium alloy, calcium, calcium alloy, strontium, strontium close
Gold, lanthanum, lanthanum alloy, cerium, cerium alloy, europium, europium alloy, ytterbium, ytterbium alloy, aluminum, aluminium alloy, caesium,
The combination of one or more in cesium alloy, rubidium and rubidium alloy；The thickness of described negative electrode is 5nm～30nm.
Described electronics produces the material of layer and includes six nitrile six azepine benzophenanthrenes；Described hole produces the material of layer
Including N, N '-diphenyl-N, N '-(1-naphthyl)-1,1 '-biphenyl-4,4 '-diamidogen；Described electronics produces the thickness of layer
5nm～50nm；It is 5nm～50nm that described hole produces the thickness of layer.
The material of described hole injection layer includes six nitrile six azepine benzophenanthrenes；The thickness of described hole injection layer
For 5nm～50nm；
The material of described hole transmission layer includes N, N '-diphenyl-N, N '-(1-naphthyl)-1,1 '-biphenyl-4,4 '-two
Amine；The thickness of described hole transmission layer is 5nm～50nm；
The material of described first electronic barrier layer and the second electronic barrier layer all includes 4,4', 4 " and-three (carbazole-9-
Base) triphenylamine；The thickness of described first electronic barrier layer and the second electronic barrier layer is 5nm～30nm；
Described first electron transfer layer includes two structure sheafs overlapped, wherein the material bag of a structure sheaf
Include 4,7-diphenyl-1,10-phenanthrene quinoline, the material of another structure sheaf includes 4,7-diphenyl-1,10-phenanthrene quinoline with
The mixture of lithium；The thickness of described first electron transfer layer is 5nm～50nm；
The material of described second electron transfer layer includes 4,7-diphenyl-1,10-phenanthrene quinoline；Described second electronics
The thickness of transport layer is 5nm～50nm；
Described red quantum point includes that the first kernel and the first shell, the material of described first kernel are CdSe,
The material of described first shell is ZnS；Described green quantum dot includes the second kernel and second housing, described
The material of the second kernel is CdSe, and the material of described second housing is ZnS；
The thickness of described red quantum point thin film is 10nm～200nm；The thickness of described green quantum dot film
For 10nm～200nm.
Beneficial effects of the present invention: a kind of OLED that the present invention provides, by by two or more
Luminescence unit be cascaded, the luminous intensity of the OLED that can be multiplied, be conducive to improve
The display effect of OLED display.A kind of OLED display that the present invention provides comprises above-mentioned OLED device
Part, by being cascaded by the luminescence unit of two or more, be multiplied luminous intensity, favorably
Send red, green glow in excitation quantum point thin film, obtain the red green blue tricolor light of high color saturation, improve
The colour gamut of OLED display；Simultaneously because the luminescent layer of corresponding red, green, blue pixel in OLED display
It is blue light-emitting layer, it is to avoid use precision metallic mask plate, is conducive to improving the resolution of OLED display
Rate.
In order to be able to be further understood that inventive feature and technology contents, refer to below in connection with the present invention
Detailed description and accompanying drawing, but accompanying drawing only provide with reference to and explanation use, not be used for the present invention is limited
System.
Accompanying drawing explanation
Below in conjunction with the accompanying drawings, by the detailed description of the invention of the present invention is described in detail, the skill of the present invention will be made
Art scheme and other beneficial effect are apparent.
In accompanying drawing,
Fig. 1 is the structural representation of a kind of existing common top emitting Nan dian Yao device；
Fig. 2 is the structural representation of the OLED of the present invention；
Fig. 3 is the lamination top emitting Nan dian Yao device of the present invention and existing common top emitting blue light
The contrast schematic diagram of the luminous intensity of OLED；
Fig. 4 is the structural representation of the OLED display of the present invention；
Fig. 5 is the spectrogram of the red green blue tricolor light that the OLED display of the present invention sends.
Detailed description of the invention
By further illustrating the technological means and effect thereof that the present invention taked, below in conjunction with the present invention's
Preferred embodiment and accompanying drawing thereof are described in detail.
Refer to Fig. 2, present invention firstly provides a kind of OLED 120, including setting gradually from top to bottom
Anode 10, hole injection layer 20, hole transmission layer the 30, first luminescence unit 40, charge generation layer 50,
Second luminescence unit 60 and negative electrode 70；
The first electronic barrier layer 41 that wherein, described first luminescence unit 40 includes setting gradually from top to bottom,
First luminescent layer 42 and the first electron transfer layer 43；Described second luminescence unit 60 includes depending on from top to bottom
Second electronic barrier layer the 61, second luminescent layer 62 and the second electron transfer layer 63 of secondary setting；Described electricity
Lotus produces electronics generation layer 51 and the hole generation layer 52 that layer 50 includes setting gradually from top to bottom.
Concrete, described charge generation layer 50 is for respectively to the first luminescence unit 40 and the second luminescence unit 60
There is provided the electronics needed for its luminescence or hole so that the first luminescence unit 40 is at charge generation layer 50 and anode 10
Effect under luminous, the second luminescence unit 60 is luminous under the effect of charge generation layer 50 and negative electrode 70.The most just
Being to say, the first luminescence unit 40 and the second luminescence unit 60 are connected on anode 10 and negative electrode by charge generation layer 50
Between 70, it is achieved the structure of series type organic LED, luminous efficiency can be increased.
Concrete, described anode 10 is used for injecting holes in hole injection layer 20.
Concrete, described hole injection layer 20 is for being injected into hole transmission layer 30 by hole from anode 10.
Preferably, the material of described hole injection layer 20 includes six nitrile six azepine benzophenanthrenes
(Hexanitrilehexaazatriphenylene, HATCN), the structural formula of described six nitrile six azepine benzophenanthrenes is
Concrete, the thickness of described hole injection layer 20 is 5nm～50nm, preferably 10nm.
Concrete, described hole transmission layer 30 is for by the first electronics of hole transport to the first luminescence unit 40
In barrier layer 41.
Preferably, the material of described hole transmission layer 30 includes N, N '-diphenyl-N, N '-(1-naphthyl)-1,1 '-connection
Benzene-4, and 4 '-diamidogen (N, N '-bis (naphthalen-1-yl)-N, N '-bis (phenyl) benzidine, NPB), described
The structural formula of N, N '-diphenyl-N, N '-(1-naphthyl)-1,1 '-biphenyl-4,4 '-diamidogen is
Concrete, the thickness of described hole transmission layer 30 is 5nm～50nm.
Concrete, described first electronic barrier layer 41 and the second electronic barrier layer 61 are respectively used to limit electronics
In the first luminescent layer 42 and the second luminescent layer 62, and by hole transport to the first luminescent layer 42 and second
In photosphere 62.
Concrete, the material of described first electronic barrier layer 41 and the second electronic barrier layer 61 all includes 4,4', 4 "-
Three (carbazole-9-base) triphenylamine (4,4 ', 4 "-tris (N-carbazolyl) triphenylamine, TCTA), described
4,4', 4 " structural formula of-three (carbazole-9-base) triphenylamine is
Concrete, the thickness of described first electronic barrier layer 41 is 5nm～30nm, preferably 10nm；Described
The thickness of the second electronic barrier layer 61 is 5nm～30nm, preferably 10nm.
Concrete, described first luminescent layer 42 and the second luminescent layer 62 are used for making hole and electronics in luminescent layer
Recombination luminescence.
Preferably, described first luminescent layer 42 and the second luminescent layer 62 are blue light-emitting, and described blue light is sent out
The material of photosphere includes 4,4 '-two (2,2)-diphenylethyllene-1,1 biphenyl
(4,4 '-Bis (2,2-diphenylvinyl)-1,10-biphenyl, DPVBi), described 4,4 '-two (2,2)-stilbene
The structural formula of base-1,1 biphenyl is
Concrete, the thickness of described first luminescent layer 42 is 5nm～40nm, preferably 25nm；Described second
The thickness of luminescent layer 62 is 5nm～40nm, preferably 25nm.
Concrete, described first electron transfer layer 43 will be for being transferred to from charge generation layer 50 injected electrons
In first luminescent layer 42, described second electron transfer layer 63 will be for being transferred to the from negative electrode 70 injected electrons
In two luminescent layers 62.
Concrete, described first electron transfer layer 43 includes two structure sheafs overlapped, a wherein structure sheaf
Material include 4,7-diphenyl-1,10-phenanthrene quinoline (4,7-diphenyl-1,10-phenanthroline, Bphen),
The material of another structure sheaf includes 4,7-diphenyl-1, the mixture of 10-phenanthrene quinoline (Bphen) and lithium (Li),
The thickness of this double-layer structure is both preferably 10nm.The structural formula of described 4,7-diphenyl-1,10-phenanthrene quinoline is
Concrete, the thickness of described first electron transfer layer 43 is 5nm～50nm, preferably 20nm.
Concrete, the material of described second electron transfer layer 63 includes 4,7-diphenyl-1,10-phenanthrene quinoline
(Bphen)。
Concrete, the thickness of described second electron transfer layer 63 is 5nm～50nm, preferably 20nm.
Concrete, described electronics produces layer 51 and is used for producing electronics, and injects electrons into the first luminescence unit
In first electron transfer layer 43 of 40, described hole produces layer 52 and is used for producing hole, and injects holes into
In second electronic barrier layer 61 of the second luminescence unit 60.
Concrete, described electronics produces the material of layer 51 and includes six nitriles six azepine benzophenanthrene (HATCN)；Institute
The material stating hole generation layer 52 includes N, N '-diphenyl-N, N '-(1-naphthyl)-1,1 '-biphenyl-4,4 '-diamidogen
(NPB)。
Concrete, it is 5nm～50nm, preferably 10nm that described electronics produces the thickness of layer 51；Described hole
The thickness producing layer 52 is 5nm～50nm, preferably 10nm.
Concrete, described negative electrode 70 is used for injecting electrons in the second electron transfer layer 63.
Preferably, described anode 10 is total reflection anode, and described negative electrode 70 is semitransparent cathode so that this
Bright OLED constitutes top emission OLED device.
Preferably, described anode 10 is be made up of two tin indium oxides (ITO) layer clamping one metal level compound
Layer；The thickness of described indium tin oxide layer is 5nm～50nm, preferably 15nm；The thickness of described metal level is
80nm～1000nm, preferably 150nm；The material of described metal level can be silver (Ag) or aluminum (Al).
Concrete, the material of described negative electrode 70 is usually low work function metal material, as included lithium (Li), lithium
Alloy, magnesium (Mg), magnesium alloy, calcium (Ca), calcium alloy, strontium (Sr), strontium alloy, lanthanum (La),
Lanthanum alloy, cerium (Ce), cerium alloy, europium (Eu), europium alloy, ytterbium (Yb), ytterbium alloy, aluminum (Al),
The combination of one or more in aluminium alloy, caesium (Cs), cesium alloy, rubidium (Rb) and rubidium alloy.Excellent
Choosing, the thickness of described negative electrode 70 is 5nm～30nm.
Preferably, described negative electrode 70 is to be superposed the laminated film constituted with silver layer by magnesium layer, the thickness of described magnesium layer
Degree is preferably 2nm, and the thickness of described silver layer is preferably 15nm.
Preferably, described negative electrode 70 uses vacuum deposition method film forming.
When the first luminescent layer 42 in Fig. 2 and the second luminescent layer 62 are blue light-emitting, and anode 10 is for being all-trans
Shining sun pole, when negative electrode 70 is semitransparent cathode, the OLED of the present invention i.e. constitutes lamination top emitting blue light
OLED, under same current density, by lamination top emitting Nan dian Yao device and Fig. 1 of the present invention
The luminous intensity of shown common top emitting Nan dian Yao device contrasts, the result obtained such as Fig. 3 institute
Show, from figure 3, it can be seen that the luminous intensity of the lamination top emitting Nan dian Yao device of the present invention is higher than
More than 1 times of the luminous intensity of existing common top emitting Nan dian Yao device.
Above-mentioned OLED, by the luminescence unit of two or more is cascaded, can be at double
Increase the luminous intensity of OLED, be conducive to improving the display effect of OLED display.
Referring to Fig. 4 and Fig. 2, the present invention also provides for a kind of OLED display, including TFT substrate 110, sets
OLED 120 in described TFT substrate 110, it is located at the cap above described OLED 120
Plate 130 and be located at the packaging adhesive material 150 between described encapsulation cover plate 130 and OLED 120；
As in figure 2 it is shown, described OLED 120 includes anode 10, the hole note set gradually from top to bottom
Enter layer 20, hole transmission layer the 30, first luminescence unit 40, charge generation layer the 50, second luminescence unit 60,
And negative electrode 70；
The first electronic barrier layer 41 that wherein, described first luminescence unit 40 includes setting gradually from top to bottom,
First luminescent layer 42 and the first electron transfer layer 43, described second luminescence unit 60 includes the most successively
The second electronic barrier layer the 61, second luminescent layer 62 and the second electron transfer layer 63 arranged；Described first
Photosphere 42 and the second luminescent layer 62 are blue light-emitting；Described charge generation layer 50 includes the most successively
The electronics arranged produces layer 51 and hole produces layer 52；
Described encapsulation cover plate 130 includes cover plate 131 and is located on described cover plate 131 towards described OLED device
The quantum dot film 140 of part 120 side；
Described quantum dot film 140 includes red pixel cell 141, green pixel cell 142 and blue picture
Element unit 143, described red pixel cell 141 is red quantum point thin film, described green pixel cell 142
For green quantum dot film, described blue pixel cells 143 is transparent material or through hole；
After applying voltage, described OLED 120 sends blue light, and this blue light excites the described red picture of composition
The red quantum point thin film of element unit 141 sends HONGGUANG, excites the green constituting described green pixel cell 142
Quantum dot film sends green glow, appears blue light through described blue pixel cells 143, thus realizes RGB
Three primary colors shows.
Concrete, described packaging adhesive material 150, for bonding encapsulation cover plate 130 and OLED 120, makes envelope
OLED 120 is formed and seals protection by capping plate 130, intercepts water and oxygen invading OLED 120
Erosion.
Concrete, described red quantum point includes the first kernel and the first shell, the material of described first kernel
For cadmium selenide (CdSe), the material of described first shell is zinc sulfide (ZnS)；Described green quantum dot bag
Including the second kernel and second housing, the material of described second kernel is CdSe, the material of described second housing
For ZnS.
Concrete, the thickness of described red quantum point thin film is 10nm～200nm, preferably 30nm.
Concrete, the thickness of described green quantum dot film is 10nm～200nm, preferably 30nm.
Concrete, the thickness of described hole injection layer 20 is 5nm～50nm, preferably 10nm.
Preferably, the material of described hole injection layer 20 includes six nitriles six azepine benzophenanthrene (HATCN).
Concrete, the thickness of described hole transmission layer 30 is 5nm～50nm.
Preferably, the material of described hole transmission layer 30 includes N, N '-diphenyl-N, N '-(1-naphthyl)-1,1 '-connection
Benzene-4,4 '-diamidogen (NPB).
Concrete, the thickness of described first electronic barrier layer 41 is 5nm～30nm, preferably 10nm；Described
The thickness of the second electronic barrier layer 61 is 5nm～30nm, preferably 10nm.
Concrete, the material of described first electronic barrier layer 41 and the second electronic barrier layer 61 all includes 4,4', 4 "-
Three (carbazole-9-base) triphenylamine (TCTA).
Concrete, the thickness of described first luminescent layer 42 is 5nm～40nm, preferably 25nm；Described second
The thickness of luminescent layer 62 is 5nm～40nm, preferably 25nm.
Concrete, the material of described blue light-emitting includes 4,4 '-two (2,2)-diphenylethyllene-1,1 biphenyl
(DPVBi)。
Concrete, the thickness of described first electron transfer layer 43 is 5nm～50nm, preferably 20nm.
Concrete, described first electron transfer layer 43 includes two structure sheafs overlapped, a wherein structure sheaf
Material include 4,7-diphenyl-1,10-phenanthrene quinoline, the material of another structure sheaf includes 4,7-diphenyl-1,10-
Luxuriant and rich with fragrance quinoline (Bphen) and the mixture of lithium (Li), the thickness of this double-layer structure is both preferably 10nm.
Concrete, the thickness of described second electron transfer layer 63 is 5nm～50nm, preferably 20nm.
Concrete, the material of described second electron transfer layer 63 includes 4,7-diphenyl-1,10-phenanthrene quinoline
(Bphen)。
Concrete, it is 5nm～50nm that described electronics produces the thickness of layer 51, and described hole produces the film of layer 52
Thickness is 5nm～50nm.
Concrete, described electronics produces the material of layer 51 and includes six nitriles six azepine benzophenanthrene (HATCN)；Institute
The material stating hole generation layer 52 includes N, N '-diphenyl-N, N '-(1-naphthyl)-1,1 '-biphenyl-4,4 '-diamidogen
(NPB)。
Concrete, described anode 10 is total reflection anode, and described negative electrode 70 is semitransparent cathode so that OLED
Device constitutes top emission OLED device.
Preferably, described anode 10 is the composite bed being made up of two indium tin oxide layer clamping one metal levels；Described
The thickness of indium tin oxide layer is 5nm～50nm, preferably 15nm；The thickness of described metal level is
80nm～1000nm, preferably 150nm；The material of described metal level can be silver or aluminum.
Concrete, the material of described negative electrode 70 is usually low work function metal material, as include lithium, lithium alloy,
Magnesium, magnesium alloy, calcium, calcium alloy, strontium, strontium alloy, lanthanum, lanthanum alloy, cerium, cerium alloy, europium, europium close
One or more in gold, ytterbium, ytterbium alloy, aluminum, aluminium alloy, caesium, cesium alloy, rubidium and rubidium alloy
Combination.Preferably, the thickness of described negative electrode 70 is 5nm～30nm.
Preferably, described negative electrode 70 is to be superposed the laminated film constituted with silver layer by magnesium layer, the thickness of described magnesium layer
Degree is preferably 2nm, and the thickness of described silver layer is preferably 15nm.
Preferably, described negative electrode 70 uses vacuum deposition method film forming.
As it is shown in figure 5, the spectrogram of the red green blue tricolor light sent for the OLED display of the present invention,
In chromaticity coordinates system, the chromaticity coordinates of this Red Green Blue light is respectively HONGGUANG (0.70,0.30),
Green glow (0.15,0.76), blue light (0.12,0.08), it can be seen that the OLED display of the present invention is sent out
The Red Green Blue light gone out is respectively provided with higher color saturation, and the OLED of the present invention is shown
The colour gamut of device is up to 122.6%.
Above-mentioned OLED display, OLED therein is by by the luminescence unit string of two or more
Being linked togather, the luminous intensity of the OLED that can be multiplied, beneficially excitation quantum point thin film sends
Red and green glow, obtains the red green blue tricolor light of high color saturation, improves OLED display simultaneously
Colour gamut.
In sum, the present invention provides a kind of OLED and OLED display.The OLED of the present invention
Device, by being cascaded by the luminescence unit of two or more, can be multiplied OLED
Luminous intensity, be conducive to improve OLED display display effect.The OLED display bag of the present invention
Containing above-mentioned OLED, by the luminescence unit of two or more is cascaded, it is multiplied and sends out
Light intensity, beneficially excitation quantum point thin film send red, green glow, and the RGB three obtaining high color saturation is former
Coloured light, improves the colour gamut of OLED display；Simultaneously because corresponding red, green, blue picture in OLED display
The luminescent layer of element is blue light-emitting layer, it is to avoid use precision metallic mask plate, is conducive to improving OLED and shows
Show the resolution of device.
The above, for the person of ordinary skill of the art, can be according to the technical side of the present invention
Other various corresponding changes and deformation are made in case and technology design, and all these change and deformation are all answered
Belong to the protection domain of the claims in the present invention.
Claims (10)
1. an OLED, it is characterised in that the anode (10) that includes setting gradually from top to bottom,
Hole injection layer (20), hole transmission layer (30), the first luminescence unit (40), charge generation layer (50),
Second luminescence unit (60) and negative electrode (70)；
Wherein, described first luminescence unit (40) includes the first electronic blocking set gradually from top to bottom
Layer (41), the first luminescent layer (42) and the first electron transfer layer (43), described second luminescence unit (60)
Including the second electronic barrier layer (61) set gradually from top to bottom, the second luminescent layer (62) and second
Electron transfer layer (63)；
Described charge generation layer (50) includes that the electronics set gradually from top to bottom produces layer (51) and sky
Cave produces layer (52).
2. OLED as claimed in claim 1, it is characterised in that described first luminescent layer (42)
Be blue light-emitting with the second luminescent layer (62), the material of described blue light-emitting include 4,4 '-two (2,2)-
Diphenylethyllene-1,1 biphenyl；The thickness of described first luminescent layer (42) is 5nm～40nm；Described second
The thickness of luminescent layer (62) is 5nm～40nm.
3. OLED as claimed in claim 1, it is characterised in that described anode (10) is for being all-trans
Shining sun pole, described negative electrode (70) is semitransparent cathode；
Described anode (10) is the composite bed being made up of two indium tin oxide layer clamping one metal levels；Described oxygen
The thickness changing indium tin layer is 5nm～50nm；The thickness of described metal level is 80nm～1000nm；
The material of described negative electrode (70) include lithium, lithium alloy, magnesium, magnesium alloy, calcium, calcium alloy, strontium,
Strontium alloy, lanthanum, lanthanum alloy, cerium, cerium alloy, europium, europium alloy, ytterbium, ytterbium alloy, aluminum, aluminium alloy,
The combination of one or more in caesium, cesium alloy, rubidium and rubidium alloy；The thickness of described negative electrode (70)
For 5nm～30nm.
4. OLED as claimed in claim 1, it is characterised in that described electronics produces layer (51)
Material include six nitrile six azepine benzophenanthrenes；Described hole produces the material of layer (52) and includes N, N '-hexichol
Base-N, N '-(1-naphthyl)-1,1 '-biphenyl-4,4 '-diamidogen；Described electronics produces the thickness of layer (51)
5nm～50nm；It is 5nm～50nm that described hole produces the thickness of layer (52).
5. OLED as claimed in claim 1, it is characterised in that described hole injection layer (20)
Material include six nitrile six azepine benzophenanthrenes；The thickness of described hole injection layer (20) is 5nm～50nm；
The material of described hole transmission layer (30) includes N, N '-diphenyl-N, N '-(1-naphthyl)-1,1 '-biphenyl
-4,4 '-diamidogen；The thickness of described hole transmission layer (30) is 5nm～50nm；
The material of described first electronic barrier layer (41) and the second electronic barrier layer (61) all includes 4,4', 4 "-
Three (carbazole-9-base) triphenylamine；Described first electronic barrier layer (41) and the second electronic barrier layer (61)
Thickness be 5nm～30nm；
Described first electron transfer layer (43) includes two structure sheafs overlapped, wherein a structure sheaf
Material includes 4, and 7-diphenyl-1,10-phenanthrene quinoline, the material of another structure sheaf includes 4, and 7-diphenyl-1,10-is luxuriant and rich with fragrance
Quinoline and the mixture of lithium；The thickness of described first electron transfer layer (43) is 5nm～50nm；
The material of described second electron transfer layer (63) includes 4,7-diphenyl-1,10-phenanthrene quinoline；Described
The thickness of two electron transfer layers (63) is 5nm～50nm.
6. an OLED display, it is characterised in that include TFT substrate (110), be located at described TFT
OLED (120) on substrate (110), it is located at the encapsulation of described OLED (120) top
Cover plate (130) and be located at the encapsulation between described encapsulation cover plate (130) and OLED (120)
Glue material (150)；
Described OLED (120) includes anode (10), the hole injection layer set gradually from top to bottom
(20), hole transmission layer (30), the first luminescence unit (40), charge generation layer (50), second
Light unit (60) and negative electrode (70)；
Wherein, described first luminescence unit (40) includes the first electronic blocking set gradually from top to bottom
Layer (41), the first luminescent layer (42) and the first electron transfer layer (43), described second luminescence unit (60)
Including the second electronic barrier layer (61) set gradually from top to bottom, the second luminescent layer (62) and second
Electron transfer layer (63)；Described first luminescent layer (42) and the second luminescent layer (62) are blue light emitting
Layer；Described charge generation layer (50) includes that the electronics set gradually from top to bottom produces layer (51) and sky
Cave produces layer (52)；
Described encapsulation cover plate (130) include cover plate (131) and be located on described cover plate (131) towards
The quantum dot film (140) of described OLED (120) side；
Described quantum dot film (140) includes red pixel cell (141), green pixel cell unit
(142) and blue pixel cells (143), described red pixel cell (141) is that red quantum point is thin
Film, described green pixel cell (142) is green quantum dot film, described blue pixel cells (143)
For transparent material or through hole；
After applying voltage, described OLED (120) sends blue light, and this blue light excites composition described red
The red quantum point thin film of color pixel unit (141) sends HONGGUANG, excites the described green pixel cell of composition
(142) green quantum dot film sends green glow, appears indigo plant through described blue pixel cells (143)
Light, thus realize red green blue tricolor and show.
7. OLED display as claimed in claim 6, it is characterised in that the material of described blue light-emitting
Material includes 4,4 '-two (2,2)-diphenylethyllene-1,1 biphenyl；The thickness of described first luminescent layer (42) is
5nm～40nm；The thickness of described second luminescent layer (62) is 5nm～40nm.
8. OLED display as claimed in claim 6, it is characterised in that described anode (10) is complete
Reflection anode, described negative electrode (70) is semitransparent cathode；
Described anode (10) is the composite bed being made up of two indium tin oxide layer clamping one metal levels；Described oxygen
The thickness changing indium tin layer is 5nm～50nm；The thickness of described metal level is 80nm～1000nm；
The material of described negative electrode (70) include lithium, lithium alloy, magnesium, magnesium alloy, calcium, calcium alloy, strontium,
Strontium alloy, lanthanum, lanthanum alloy, cerium, cerium alloy, europium, europium alloy, ytterbium, ytterbium alloy, aluminum, aluminium alloy,
The combination of one or more in caesium, cesium alloy, rubidium and rubidium alloy；The thickness of described negative electrode (70)
For 5nm～30nm.
9. OLED display as claimed in claim 6, it is characterised in that described electronics produces layer (51)
Material include six nitrile six azepine benzophenanthrenes；Described hole produces the material of layer (52) and includes N, N '-hexichol
Base-N, N '-(1-naphthyl)-1,1 '-biphenyl-4,4 '-diamidogen；Described electronics produces the thickness of layer (51)
5nm～50nm；It is 5nm～50nm that described hole produces the thickness of layer (52).
10. OLED display as claimed in claim 6, it is characterised in that described hole injection layer (20)
Material include six nitrile six azepine benzophenanthrenes；The thickness of described hole injection layer (20) is 5nm～50nm；
The material of described hole transmission layer (30) includes N, N '-diphenyl-N, N '-(1-naphthyl)-1,1 '-biphenyl
-4,4 '-diamidogen；The thickness of described hole transmission layer (30) is 5nm～50nm；
The material of described first electronic barrier layer (41) and the second electronic barrier layer (61) all includes 4,4', 4 "-
Three (carbazole-9-base) triphenylamine；Described first electronic barrier layer (41) and the second electronic barrier layer (61)
Thickness be 5nm～30nm；
Described first electron transfer layer (43) includes two structure sheafs overlapped, wherein a structure sheaf
Material includes 4, and 7-diphenyl-1,10-phenanthrene quinoline, the material of another structure sheaf includes 4, and 7-diphenyl-1,10-is luxuriant and rich with fragrance
Quinoline and the mixture of lithium；The thickness of described first electron transfer layer (43) is 5nm～50nm；
The material of described second electron transfer layer (63) includes 4,7-diphenyl-1,10-phenanthrene quinoline；Described
The thickness of two electron transfer layers (63) is 5nm～50nm；
Described red quantum point includes that the first kernel and the first shell, the material of described first kernel are CdSe,
The material of described first shell is ZnS；Described green quantum dot includes the second kernel and second housing, described
The material of the second kernel is CdSe, and the material of described second housing is ZnS；
The thickness of described red quantum point thin film is 10nm～200nm；The thickness of described green quantum dot film
For 10nm～200nm.
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