CN106409929B - Main-grid-free full back contact solar cell module - Google Patents
Main-grid-free full back contact solar cell module Download PDFInfo
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- CN106409929B CN106409929B CN201610877970.9A CN201610877970A CN106409929B CN 106409929 B CN106409929 B CN 106409929B CN 201610877970 A CN201610877970 A CN 201610877970A CN 106409929 B CN106409929 B CN 106409929B
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- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052709 silver Inorganic materials 0.000 claims abstract description 7
- 239000004332 silver Substances 0.000 claims abstract description 7
- 230000005611 electricity Effects 0.000 claims description 62
- 238000003466 welding Methods 0.000 claims description 42
- 210000004027 cell Anatomy 0.000 claims description 41
- 238000002161 passivation Methods 0.000 claims description 36
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 33
- 229910052710 silicon Inorganic materials 0.000 claims description 33
- 239000010703 silicon Substances 0.000 claims description 33
- 238000004904 shortening Methods 0.000 claims description 24
- 239000000758 substrate Substances 0.000 claims description 21
- 238000009413 insulation Methods 0.000 claims description 17
- 210000003850 cellular structure Anatomy 0.000 claims description 15
- 239000011159 matrix material Substances 0.000 claims description 10
- 239000002245 particle Substances 0.000 claims description 7
- 239000011230 binding agent Substances 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 239000002390 adhesive tape Substances 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- 239000003822 epoxy resin Substances 0.000 claims description 3
- 239000003292 glue Substances 0.000 claims description 3
- 229920000647 polyepoxide Polymers 0.000 claims description 3
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 claims description 2
- 229910001316 Ag alloy Inorganic materials 0.000 claims description 2
- 229910001152 Bi alloy Inorganic materials 0.000 claims description 2
- 229910001074 Lay pewter Inorganic materials 0.000 claims description 2
- 239000004642 Polyimide Substances 0.000 claims description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 2
- OLXNZDBHNLWCNK-UHFFFAOYSA-N [Pb].[Sn].[Ag] Chemical compound [Pb].[Sn].[Ag] OLXNZDBHNLWCNK-UHFFFAOYSA-N 0.000 claims description 2
- 239000000853 adhesive Substances 0.000 claims description 2
- 230000001070 adhesive effect Effects 0.000 claims description 2
- 238000005275 alloying Methods 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 229920001568 phenolic resin Polymers 0.000 claims description 2
- 239000005011 phenolic resin Substances 0.000 claims description 2
- 229920001721 polyimide Polymers 0.000 claims description 2
- 239000004814 polyurethane Substances 0.000 claims description 2
- 229920002635 polyurethane Polymers 0.000 claims description 2
- 229920005992 thermoplastic resin Polymers 0.000 claims description 2
- 239000002923 metal particle Substances 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 22
- 238000004519 manufacturing process Methods 0.000 abstract description 13
- 238000005520 cutting process Methods 0.000 abstract description 7
- 238000011049 filling Methods 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 38
- 229910004205 SiNX Inorganic materials 0.000 description 21
- 229910052681 coesite Inorganic materials 0.000 description 19
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- 229910052905 tridymite Inorganic materials 0.000 description 19
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 10
- 229910052593 corundum Inorganic materials 0.000 description 10
- 229910001845 yogo sapphire Inorganic materials 0.000 description 10
- 238000010586 diagram Methods 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
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- 238000003475 lamination Methods 0.000 description 6
- 238000007639 printing Methods 0.000 description 6
- 239000002002 slurry Substances 0.000 description 5
- 238000000151 deposition Methods 0.000 description 4
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- 238000006243 chemical reaction Methods 0.000 description 3
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- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
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- 239000004065 semiconductor Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0516—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module specially adapted for interconnection of back-contact solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a main grid-free full back contact solar cell module, which comprises a plurality of back contact solar cells connected in series, wherein each back contact solar cell is formed by cutting back contact solar cells; because a plurality of battery units are cut, the current of each battery piece group string is reduced, and the influence of the resistance loss of the thin grid line is reduced, so that the consumption of silver paste can be reduced, and the filling factors of the battery and the assembly are improved; based on the two points, the battery pack can improve the efficiency of the full back contact battery pack and reduce the process difficulty and the manufacturing cost of the full back contact battery pack.
Description
Technical field
The invention belongs to area of solar cell, and in particular to a kind of no full back contact solar cell component of main grid.
Background technique
Solar battery is a kind of semiconductor devices for converting light energy into electric energy, lower production cost and higher energy
Amount transformation efficiency is always the target that solar cell industry is pursued.For current conventional solar battery, positive electrode contact
Electrode and negative electrode contact electrode are located at the tow sides of cell piece.The front of battery is light-receiving surface, front metal positive electricity
The covering of pole contact electrode will cause the sunlight of a part of incidence to be reflected by metal electrode, and a part of optics is caused to damage
It loses.The area coverage of the front metal electrode of common crystal silicon solar batteries reduces the front covering of metal electrode 7% or so
The energy conversion efficiency for the battery that can directly improve.
Full back contact solar cell be it is a kind of by positive electrode and negative electrode contact electrode be both placed in cell backside (it is non-by
Smooth surface) battery, the light-receiving surface of the battery is blocked without any metal electrode, to effectively increase the short circuit current of cell piece,
It is improved the energy conversion efficiency of cell piece.
The solar battery of full back contact structure is energy in the crystal silicon solar batteries of current energy industrialized mass production
A kind of highest battery of transformation efficiency, its high transformation efficiency, low component package cost are deep always to be favored by people.?
In previous full back contact solar cell manufacture craft, it is real that metallization process mostly uses the complex plating of process
Existing, this method has outstanding performance in the series resistance for reducing back contact battery, the open-circuit voltage for improving battery really, but should
Method and process is complicated, and the waste of discharge seriously pollutes environment, and with the mainstream method for metallising of current industrialized production not phase
It is compatible therefore larger for the industrialization promotion difficulty of low cost.
If carrying out the metallization of back contact battery using conventional main gate line using the screen printing technique of current mainstream
Two main problems faced when design are (1): between main gate line and the thin grid line of opposite electrode and main gate line and opposite electrode
Insulation between corresponding doped region.(2) because full back contact battery electric current is significantly higher than conventional batteries, in order to reduce main grid
Power loss caused by line resistance on line and thin grid line is needed using wider grid line, and more slurry consumptions bring cost
It steeply rises.
A kind of solution solves between main gate line and the thin grid line of opposite electrode and main gate line and the corresponding doping of opposite electrode
The method of insulation between region is the corresponding region printing insulating layer slurry of positive electrode main grid, only positive-electrode fine on silicon wafer
Grid line and the region peripheral part p+ are not blocked.Likewise, printing insulating layer slurry in the corresponding region of negative electrode main grid, only
The superfine grid line of negative electricity and the region peripheral part n+ are not blocked.The method of this printing insulation paste must have enough thickness,
Otherwise it is easy to that tip breakdown occurs.It cannot pass through high-temperature process, existing sintering process after printing additionally, due to this slurry
It is incompatible with its.The price of above disadvantage and insulation paste valuableness causes the method for printing insulating layer slurry not advised greatly
The use of mould.
Another method solves between main gate line and the thin grid line of opposite electrode and main gate line and opposite electrode is corresponding mixes
Insulation between miscellaneous region is that positive and negative electrode is designed using rich font, and the superfine grid line of negative electricity avoids positive electrode main gate line, positive electrode
Thin grid line avoids negative electrode main gate line.The X-Y scheme of positive and negative electrode in this way does not have staggered place, can solve reverse leakage
Problem.But the drawbacks of this method, is that the corresponding electronics in relationship positive electrode main grid position due to lateral transport distance is difficult to
It is collected by negative electrode, the corresponding hole in negative electrode main grid position is difficult to be collected by positive electrode.In this way, leading to the fill factor of battery
And incident photon-to-electron conversion efficiency is a greater impact.
Summary of the invention
The purpose of the present invention is to provide a kind of no full back contact solar cell components of main grid, this is without the full back contacts of main grid
Solar cell module avoids full back contact battery setting main gate line bring loss in efficiency and process complexity and saves
Main gate line cost；Simultaneously because cut multiple battery units, the electric current of every a string of cell pieces group string is reduced, to reduce
The influence of thin grid line line resistance loss, therefore can reduce the consumption of silver paste, at the same improve the filling of battery and component because
Son；Based on the above two o'clock, which can not only promote the efficiency of full back contact battery component but also can reduce its technique hardly possible
Degree and manufacturing cost.
Above-mentioned purpose of the invention is achieved through the following technical solutions: a kind of no full back contact solar electricity of main grid
Pond component, including multiple back contact solar baby battery pieces being connected in series, the back contact solar baby battery piece is by back contacts
Solar battery sheet is cut, and the back contact solar baby battery piece includes n-type silicon matrix, the back of the n-type silicon matrix
Face, which is equipped with, to be parallel to each other and alternately arranged p+ doped region and n+ doped region, the p+ doped region and n+ doped region
It is equipped with passivation layer, the passivation layer is equipped with positive-electrode fine grid, and it is corresponding that the positive-electrode fine grid are located at the p+ doped region
It is in contact on position and with the p+ doped region, the superfine grid of negative electricity, the superfine grid position of negative electricity is additionally provided on the passivation layer
It is in contact on the n+ doped region corresponding position and with the n+ doped region, the positive-electrode fine grid and the negative electrode
Thin grid are parallel to each other and are arranged alternately, and the both ends of the positive-electrode fine grid and the both ends of the superfine grid of the negative electricity are misaligned, wherein
One end of the positive-electrode fine grid has jag, the other end phase of the positive-electrode fine grid relative to one end of the superfine grid of negative electricity
The other end of grid superfine for negative electricity have shorten end, one end of the superfine grid of negative electricity relative to the positive-electrode fine grid one
End, which has, shortens end, and the other end of the superfine grid of negative electricity has jag, phase relative to the other end of the positive-electrode fine grid
It, will a wherein back contact solar baby battery using conductive tape or welding when adjacent two back contact solar baby battery pieces are connected in series
The jag of the thin grid of piece is connected with the jag of the opposite polarity thin grid of adjacent back contacts day sun energy baby battery piece, described
The electric current of positive-electrode fine grid and the superfine grid of the negative electricity is exported along the direction of the positive-electrode fine grid and the superfine grid of the negative electricity.
Further, the side of conductive tape or welding of the present invention and a wherein back contact solar baby battery piece
The jag of thin grid is in contact, the polarity of the other side of the conductive tape or welding and adjacent back contact solar baby battery piece
The jag of opposite thin grid is in contact.
Back contact solar baby battery piece of the present invention is cut by back contact solar cell piece, the back after cutting
The structure of contact solar baby battery piece is similar to full back contact battery (IBC), and difference is that this back contact solar is small
Cell piece does not have main gate line, only thin grid line.Because the positive and negative superfine grid line of back contact solar baby battery piece is along thin grid line
There is a relative dislocation in direction, and in this way along thin grid line direction, one end is that positive-electrode fine grid line is prominent, and the other end is negative electrode
Thin grid line is prominent.After battery completes, conductive tape or welding are connected to the jag of the thin grid line of cell piece i.e.
The series connection between cell piece junior unit can be achieved.Specific mode is that the side of conductive tape or welding is connected to certain piece battery
The positive-electrode fine grid line of piece, the other side are connected to the superfine grid line of negative electricity of adjacent a piece of cell piece.
It is further preferred that the shape of conductive tape of the present invention and welding is strip, width is 0.2~6mm.
When adjacent two back contact solars baby battery piece is connected in series, wherein the thin grid of a back contact solar baby battery piece
The spacing shortened between end for shortening the opposite polarity thin grid of end and adjacent back contact solar baby battery piece is 0.4~6mm.
In other words, each positive and negative superfine grid line of back contact solar baby battery piece is having a phase along thin grid line direction
Facilitate the series connection of further battery piece junior unit to dislocation, the front and back of back contact solar baby battery piece is without main grid
Line.
The contracting of conductive tape or welding of the present invention and the wherein positive-electrode fine grid of a back contact solar baby battery piece
Short end and p+ doped region insulation, the negative electrode of the conductive tape or welding and adjacent back contact solar baby battery piece
The shortening end of thin grid and the n+ doped region also insulate.
As a preferred embodiment of the present invention, the conductive tape or welding and a wherein back contact solar
The corresponding position that the silicon substrate of the shortening end side of the positive-electrode fine grid of baby battery piece is in contact is equipped with p+ doped region, described
On p+ doped region at the conductive tape or welding opposite position be equipped with passivation insulation, the conductive tape or welding
The corresponding position being in contact with the silicon substrate of the shortening end side of the superfine grid of negative electricity of adjacent back contact solar baby battery piece
Equipped with n+ doped region, on the n+ doped region with also be provided at the conducting resinl or welding opposite position passivation insulation
Layer.
It designs in this way, convenient for making conductive tape or welding of the present invention and a wherein back contact solar baby battery piece
The shortening end of positive-electrode fine grid and the p+ doped region are not in contact, the conductive tape or welding and the adjacent back contacts sun
The shortening end of the superfine grid of negative electricity of energy baby battery piece and the n+ doped region are not also in contact.Prevent the generation of electric leakage.
As another preferred embodiment of the invention, conductive tape or welding of the present invention connect with wherein one back
It is adulterated equipped with n+ the corresponding position that the silicon substrate of the shortening end side of the positive-electrode fine grid of touching solar energy baby battery piece is in contact
The silicon of the shortening end side of the superfine grid of negative electricity of region, the conductive tape or welding and adjacent back contact solar baby battery piece
The corresponding position that matrix is in contact is equipped with p+ doped region.
Conductive tape of the present invention is preferably the conductive particle of binder package, and the binder is preferably epoxy resin
Conducting resinl, phenolic resin conducting resinl, conductive polyurethane glue, thermoplastic resins conductive glue or polyimides conducting resinl etc., it is described to lead
Electric particle is preferably the particles such as silver, gold, copper or alloying metal；The welding is preferably the copper bar for welding coating package, the weldering
The material for connecing coating is preferably tin, leypewter, sn-bi alloy or tin-lead silver alloy.
The width of the positive-electrode fine grid and the superfine grid of the negative electricity is 20~300 μm.
The back contact solar cell piece is cut into 2~20 back contact solar baby battery pieces.
The thin grid knot at the settable multiple back contact solar baby battery piece back sides of back contact solar cell on piece of the present invention
Structure forms the back contact solar baby battery piece of above structure, can wherein will press a back contact solar baby battery piece after cutting
According to original structural arrangement, adjacent back contact solar baby battery piece rotates 180 °, wherein a back contact solar baby battery piece
The jag of the opposite polarity thin grid of the jag and adjacent back contact solar baby battery piece of thin grid using conductive tape or
Welding connection, can form series winding cell piece.
N-type silicon matrix of the present invention is preferably first handled through surface wool manufacturing using preceding, then using diffusion, laser boring,
The technical combinations such as ion implanting & annealing, exposure mask, etching in the silicon substrate back surface p+ doped region that is arranged alternately with each other of production and
N+ doped region, and the n+FSF of low surface dopant concentration is made in silicon substrate body front surface.
Antireflective overlayer passivation film passivation n+FSF, such as Al are also deposited in front surface of the present invention2O3/ SiNx, SiO2/
SiNx, SiO2/Al2O3/SiNxDeng further preferred SiO2/ SiNx is as front passivating film, film thickness 60-200nm.
Backside deposition increase reflective stacks passivating film, that is, passivation layer to n+, P+ doped region carry out subregion passivation or it is blunt simultaneously
Change, overlayer passivation film can choose Al2O3/SiNx、SiO2/SiNx、SiO2/SiCN、SiO2/SiON etc., further preferred SiO2/
Al2O3For/SiNx as backside passivation film, film thickness is preferably 45-600nm.
After the completion of the preparation of every a string of batteries, module encapsulation techniques and the general components system such as subsequent confluence, lamination, lamination
It is no different as mode.
Compared with prior art, the invention has the following advantages:
(1) current direction is along thin grid bearing on each battery pack string in the present invention, different from conventional setting
Main gate line bring loss in efficiency is arranged so as to avoid full back contact battery in the construction of one main gate line perpendicular to thin grid line
With process complexity and saved main gate line cost；
(2) it since the cutting of back contact solar cell piece forms multiple back contact solar baby battery pieces, reduces every
The electric current of a string of cell piece group strings to reduce the influence of thin grid line line resistance loss, therefore can substantially reduce silver paste
Consumption, while improving the fill factor of battery and component；
(3) it is based on the above two o'clock, battery component of the present invention can not only promote the efficiency of full back contact battery component but also can be with
Reduce its technology difficulty and manufacturing cost.
Detailed description of the invention
Fig. 1 is the structural schematic diagram without the full back contact solar cell of main grid in embodiment 1；
Fig. 2 is in embodiment 1 without the structural schematic diagram after the full back contact solar cell laser cutting of main grid；
Fig. 3 is in embodiment 1 without the complete postrotational schematic diagram of back contact solar cell cutter unit of main grid；
Fig. 4 is the interconnection schematic diagram without the full back contact solar cell of main grid in embodiment 1；
Fig. 5 is the group string schematic diagram in embodiment 1 without the full back contact solar cell of main grid；
Fig. 6 is the structural schematic diagram without the full back contact solar cell of main grid in embodiment 2；
Fig. 7 is in embodiment 2 without the structural schematic diagram after the full back contact solar cell laser cutting of main grid；
1 is n-type silicon matrix, and 2 be n+FSF, and 3 be p+ doped region, and 4 be n+ doped region, and 5 be battery front side passivating film, 6
It is positive-electrode fine grid line for cell backside passivating film, 81,811 be the jag of positive-electrode fine grid, and 812 be the contracting of positive-electrode fine grid
Short end, 82 be the thin grid line of negative electrode, and 821 be the jag of the thin grid of negative electrode, and 822 be the shortening end of the thin grid of negative electrode, and 9 be conduction
Adhesive tape or welding.
Specific embodiment
Embodiment 1
As shown in Figs. 1-5, the full back contact solar cell component of no main grid provided in this embodiment, including multiple be connected in series
Back contact solar baby battery piece, back contact solar baby battery piece cuts by back contact solar cell piece, and back connects
Touching solar energy baby battery piece includes n-type silicon matrix 1, and the back side of n-type silicon matrix 1, which is equipped with, to be parallel to each other and alternately arranged p+ mixes
Miscellaneous region 3 and n+ doped region 4, p+ doped region 3 and n+ doped region 4 are equipped with passivation layer 6, and passivation layer 6 is equipped with positive electricity
Superfine grid 81, positive-electrode fine grid 81 are located on 3 corresponding position of p+ doped region and are in contact with p+ doped region 3, on passivation layer 6
The superfine grid 82 of negative electricity are additionally provided with, the superfine grid 82 of negative electricity are located on 4 corresponding position of n+ doped region and connect with n+ doped region 4
Touching, positive-electrode fine grid 81 and the superfine grid 82 of negative electricity are parallel to each other and are arranged alternately, and the both ends of positive-electrode fine grid 81 and negative electricity are superfine
The both ends of grid 82 are misaligned, and wherein one end of positive-electrode fine grid 81 has jag 811 relative to one end of the superfine grid 82 of negative electricity,
The other end of positive-electrode fine grid 81 has relative to the other end of the superfine grid 82 of negative electricity shortens end 812, and the one of the superfine grid 82 of negative electricity
It holds one end relative to positive-electrode fine grid 81 to have and shortens end 822, the other end of the superfine grid 82 of negative electricity is relative to positive-electrode fine grid
81 other end have jag 821, when adjacent two back contact solars baby battery piece is connected in series, using conductive tape 9 by its
In a back contact solar baby battery piece the superfine grid 82 of negative electricity jag 821 and adjacent back contacts day sun energy baby battery piece
The jags 811 of positive-electrode fine grid 81 connect, the electric current of positive-electrode fine grid 81 and the superfine grid 82 of negative electricity is along positive-electrode fine grid
81 and the superfine grid 82 of negative electricity direction export.
The wherein jag of the side of conductive tape 9 and the wherein superfine grid 82 of negative electricity of a back contact solar baby battery piece
821 are in contact and (connect), the positive-electrode fine grid 81 of the other side of conductive tape 9 and adjacent back contact solar baby battery piece
Jag 811 is in contact and (connects).
The shape of conductive tape 9 is strip, and width is 0.2~6mm.
Conductive tape is the conductive particle of binder package, and binder is epoxide resin conductive adhesive, and conductive particle is silver.
When adjacent two back contact solars baby battery piece is connected in series, wherein the positive electrode of a back contact solar baby battery piece
Between between the shortening end 822 of the superfine grid 82 of negative electricity for shortening end 812 and adjacent back contact solar baby battery piece of thin grid 81
Away from for 0.4~6mm.
The shortening end of conductive tape 9 and the wherein positive-electrode fine grid 81 of a back contact solar baby battery piece in the present embodiment
The insulation of 812 and p+ doped region 3 is not in contact, and conductive tape 9 and the negative electricity of adjacent back contact solar baby battery piece are superfine
The shortening end 822 of grid 82 and n+ doped region 4, which also insulate, not to be in contact.
Be accomplished by the following way and above-mentioned do not contact in the present embodiment: conductive tape 9 and a wherein back contact solar are small
The corresponding position that the silicon substrate of 812 side of shortening end of the positive-electrode fine grid 81 of cell piece is in contact is equipped with p+ doped region, p
On+doped region at 9 opposite position of conductive tape or welding be equipped with passivation layer, use thicker (200~2000nm)
Passivating film 6 realizes the insulation of conductive tape Yu the region p+ n+, conductive tape 9 and adjacent back contact solar baby battery piece
The corresponding positions that are in contact of silicon substrate of 822 side of shortening end of the superfine grid 82 of negative electricity be equipped with n+ doped region, n+ doping
On region with also be provided with passivation insulation at 9 opposite position of conducting resinl, passivation insulation, that is, backside passivation film 6 realizes that p+ mixes
The insulation in miscellaneous region and n+ doped region.
The width of positive-electrode fine grid 81 and the superfine grid 82 of negative electricity is 20~300 μm.
The quantity of back contact solar baby battery piece is 2, as shown in Figs. 1-3.
The thin grid at the settable multiple back contact solar baby battery piece back sides of the present embodiment back contact solar cell on piece
Structure forms the back contact solar baby battery piece of above structure, will wherein press a back contact solar baby battery piece after cutting
According to original structural arrangement, adjacent back contact solar baby battery piece rotates 180 °, as shown in Fig. 2, a wherein back contact solar
The jag of the positive-electrode fine grid 81 of the jag of the superfine grid of the negative electricity of baby battery piece and adjacent back contact solar baby battery piece
It is connected using conductive tape, forms series winding cell piece, as illustrated in figures 4-5.
The n-type silicon matrix of back contact solar cell piece is first handled through surface wool manufacturing using preceding, then utilizes diffusion, laser
The p+ doping that the technical combinations such as punching, ion implanting & annealing, exposure mask, etching are arranged alternately with each other in the production of silicon substrate back surface
Region and n+ doped region, and the n+FSF of low surface dopant concentration is made in silicon substrate body front surface.
Antireflective overlayer passivation film passivation n+FSF, such as Al are also deposited in front surface of the present invention2O3/ SiNx, SiO2/
SiNx, SiO2/Al2O3/SiNxDeng further preferred SiO2/ SiNx is as front passivating film, film thickness 60-200nm.
Backside deposition increases your passivation layer of reflective stacks passivating film and carries out subregion passivation or blunt simultaneously to n+, P+ doped region
Change, overlayer passivation film can choose Al2O3/SiNx、SiO2/SiNx、SiO2/SiCN、SiO2/SiON etc., further preferred SiO2/
Al2O3For/SiNx as backside passivation film, film thickness is preferably 45-600nm.
After the completion of the preparation of every a string of batteries, module encapsulation techniques and the general components system such as subsequent confluence, lamination, lamination
It is no different as mode.
The above-mentioned full back contact solar cell component of no main grid the preparation method is as follows:
(1) N-shaped single crystal silicon substrate 1 is selected, resistivity is 1~30 Ω cm, with a thickness of 50~300 μm, the silicon substrate
It is first handled through surface wool manufacturing using preceding, then utilizes the technology groups such as diffusion, laser boring, ion implanting & annealing, exposure mask, etching
It closes and makes the p+ doped region 3 and n+ doped region 4 being arranged alternately with each other in silicon substrate back surface, made in silicon substrate body front surface
The n+FSF 2 of low surface dopant concentration.
(2) front surface deposition antireflective overlayer passivation film 5 is passivated n+FSF, such as Al2O3/ SiNx, SiO2/ SiNx, SiO2/
Al2O3/ SiNx etc., selects SiO here2/ SiNx is as front passivating film, and film thickness is 60~200nm, and it is folded that rear surface deposition increases reflection
Layer passivating film 6 is carried out subregion passivation to n+ doped region, P+ doped region or is passivated simultaneously, and overlayer passivation film can choose
Al2O3/SiNx、SiO2/SiNx、SiO2/SiCN、SiO2/ SiON etc., selects SiO here2/Al2O3/ SiNx as backside passivation film,
Film thickness is 45~600nm.
(3) positive electrode contact point is made on p+ doped region 3, and negative electrode contact point is made on n+ doped region 4, is connect
Contact can republish in such a way that printing silver paste directly burns backside passivation film or using first laser opening or electricity
The mode of plating metal contacts dot shape without limitation, single contact point face to form the Ohmic contact of contact point and silicon substrate
Product is 100 μm2~30000 μm2。
(4) it anneals or is sintered so that contact point and silicon substrate form good Ohmic contact and solidify thin grid line,
Electric current is exported in n+ doped region and p+ doped region surface printing thin grid line connection electrode contact point, the width of thin grid line is
20~300 μm, the thin grid of battery plus-negative plate are interdigitated arrangement.
(5) above-mentioned back contact solar cell piece is cut, forms the back contact solar of above structure after cutting
Baby battery piece, one end of the positive-electrode fine grid of back contact solar baby battery piece has relative to one end of the superfine grid of negative electricity to be protruded
The length at end, jag is 0.2~3mm, and the other end of the positive-electrode fine grid of back contact solar baby battery piece is relative to negative electricity
The other end of superfine grid, which has, shortens end.
(6) after battery completes, electricity can be realized in the jag that conductive tape is connected to the thin grid line of cell piece
Series connection between the piece junior unit of pond, specific mode are that the side of conductive tape or welding is connected to the positive electricity of certain piece cell piece
Superfine grid line, the other side are connected to the superfine grid line of negative electricity of adjacent a piece of cell piece.
(7) after the completion of every a string of batteries preparation, module encapsulation techniques and the general components such as subsequent confluence, lamination, lamination
Production method is similar.
Embodiment 2
Unlike the first embodiment:
As shown in fig. 6-7, using welding by the jag of the wherein superfine grid of negative electricity of a back contact solar baby battery piece
It connects with the jag of the positive-electrode fine grid of adjacent back contacts day sun energy baby battery piece, positive-electrode fine grid and the superfine grid of negative electricity
Electric current is exported along the direction of positive-electrode fine grid and the superfine grid of negative electricity.
Welding connects with the silicon substrate of the shortening end side of the wherein positive-electrode fine grid of a back contact solar baby battery piece
The corresponding position of touching is equipped with n+ doped region, the shortening of welding and the superfine grid of negative electricity of adjacent back contact solar baby battery piece
The corresponding position that the silicon substrate of end side is in contact is equipped with p+ doped region.
Accordingly even when being sent out using the general backside passivation film of insulation performance without worry welding and following doped region
The problem of raw electric leakage, the thickness of backside passivation film can lower significantly, without making back particularly with superior insulation effect
Face passivating film.
Although the present invention is disclosed as above with embodiment, its protection scope being not intended to limit the invention, such as is led
The material of electric adhesive tape or welding can also be the other materials that Summary is enumerated, and herein be only to enumerate, and be not construed as limiting,
The graphic structure of thin grid can also carry out exchange adjustment, such as the position of p+ doped region and n+ doped region can be exchanged,
Back contact solar cell piece, can also be cut by the position of adjustment the positive-electrode fine grid and the superfine grid of negative electricity of adaptability simultaneously
2 or more, preferably 2~20, back contact solar cell on piece p+ doped region, p+ doped region, positive-electrode fine grid and
Baby battery piece after cutting can be combined by the structure of the superfine grid of negative electricity, any to be familiar with those skilled in the art,
In made change and retouching without departing from the spirit and scope of the invention, it is within the scope of protection of the invention.
Claims (10)
1. a kind of full back contact solar cell component of no main grid, it is characterized in that: including multiple back contact solars being connected in series
Baby battery piece, the back contact solar baby battery piece are cut by back contact solar cell piece, the back contacts sun
Can baby battery piece include n-type silicon matrix, the back side of the n-type silicon matrix, which is equipped with, to be parallel to each other and alternately arranged p+ doped region
Domain and n+ doped region, the p+ doped region and n+ doped region are equipped with passivation layer, and the passivation layer is equipped with positive electrode
Thin grid, the positive-electrode fine grid are located on the p+ doped region corresponding position and are in contact with the p+ doped region, described
Be additionally provided with the superfine grid of negative electricity on passivation layer, the superfine grid of negative electricity be located on the n+ doped region corresponding position and with the n+
Doped region is in contact, and the positive-electrode fine grid and the superfine grid of the negative electricity are parallel to each other and are arranged alternately, the positive-electrode fine
The both ends of grid and the both ends of the superfine grid of the negative electricity are misaligned, wherein one end of the positive-electrode fine grid is relative to the superfine grid of negative electricity
One end there is jag, the other ends of the positive-electrode fine grid has relative to the other end of the superfine grid of negative electricity shortens end, institute
The one end for stating the superfine grid of negative electricity has relative to one end of the positive-electrode fine grid shortens end, the other end of the superfine grid of negative electricity
There is the other end relative to the positive-electrode fine grid jag to adopt when adjacent two back contact solars baby battery piece is connected in series
With conductive tape or welding by the wherein jag of the thin grid of a back contact solar baby battery piece and the adjacent back contacts sun
The jag series connection of the opposite polarity thin grid of energy baby battery piece, the electric current edge of the positive-electrode fine grid and the superfine grid of the negative electricity
The direction export of the positive-electrode fine grid and the superfine grid of the negative electricity.
2. the full back contact solar cell component of no main grid according to claim 1, it is characterized in that: the conductive tape or
The side of welding is in contact with the jag of the wherein thin grid of a back contact solar baby battery piece, the conductive tape or welding
The other side be in contact with the jag of the opposite polarity thin grid of adjacent back contact solar baby battery piece.
3. the full back contact solar cell component of no main grid according to claim 2, it is characterized in that: the conductive tape and
The shape of welding is strip, and width is 0.2~6mm.
4. the full back contact solar cell component of no main grid according to claim 3, it is characterized in that: adjacent two back contacts are too
When positive energy baby battery piece is connected in series, wherein the shortening end of the thin grid of a back contact solar baby battery piece and the adjacent back contacts sun
The spacing of the opposite polarity thin grid of energy baby battery piece shortened between end is 0.4~6mm.
5. the full back contact solar cell component of no main grid according to claim 1-4, it is characterized in that: described lead
Electric adhesive tape or welding and wherein the shortening end of the positive-electrode fine grid of a back contact solar baby battery piece and the p+ doped region
The shortening end of the superfine grid of negative electricity of insulation, the conductive tape or welding and adjacent back contact solar baby battery piece and the n+
Doped region also insulate.
6. the full back contact solar cell component of no main grid according to claim 5, it is characterized in that: the conductive tape or
Welding is in contact corresponding with the silicon substrate of the shortening end side of the wherein positive-electrode fine grid of a back contact solar baby battery piece
P+ doped region is equipped at position, on the p+ doped region with passivation is equipped at the conductive tape or welding opposite position
The shortening end side of the superfine grid of negative electricity of insulating layer, the conductive tape or welding and adjacent back contact solar baby battery piece
The corresponding position that silicon substrate is in contact is equipped with n+ doped region, opposite with the conducting resinl or welding on the n+ doped region
It answers and also is provided with passivation insulation at position.
7. the full back contact solar cell component of no main grid according to claim 5, it is characterized in that: the conductive tape or
Welding is in contact corresponding with the silicon substrate of the shortening end side of the wherein positive-electrode fine grid of a back contact solar baby battery piece
N+ doped region, the superfine grid of negative electricity of the conductive tape or welding and adjacent back contact solar baby battery piece are equipped at position
The corresponding position that is in contact of silicon substrate of shortening end side be equipped with p+ doped region.
8. the full back contact solar cell component of no main grid according to claim 1-4, it is characterized in that: described lead
Electric adhesive tape is the conductive particle of binder package, and the binder is epoxide resin conductive adhesive, phenolic resin conducting resinl, polyurethane
Conducting resinl, thermoplastic resins conductive glue or polyimides conducting resinl, the conductive particle are silver, gold, copper or alloying metal particle；
The welding is the copper bar for welding coating package, and the material of the welding coating is tin, leypewter, sn-bi alloy or tin-lead silver
Alloy.
9. the full back contact solar cell component of no main grid according to claim 1-4, it is characterized in that: it is described just
The width of the thin grid of electrode and the superfine grid of the negative electricity is 20~300 μm.
10. the full back contact solar cell component of no main grid according to claim 1-4, it is characterized in that: described
Back contact solar cell piece is cut into 2~20 back contact solar baby battery pieces.
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| CN201610877970.9A CN106409929B (en) | 2016-09-30 | 2016-09-30 | Main-grid-free full back contact solar cell module |
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| CN106653881B (en) * | 2017-02-24 | 2018-12-25 | 泰州中来光电科技有限公司 | A kind of back contact solar cell string and preparation method thereof and component, system |
| CN106960891A (en) * | 2017-03-09 | 2017-07-18 | 杭州福斯特应用材料股份有限公司 | A kind of photovoltaic transparent composite membrane and preparation method and application |
| CN106876486B (en) * | 2017-03-24 | 2018-11-09 | 浙江隆基乐叶光伏科技有限公司 | String formation connection structure, component and the method for P-type crystal silicon back contacts double-side cell |
| CN106816486B (en) * | 2017-04-01 | 2018-12-25 | 泰州中来光电科技有限公司 | Battery strings of a kind of N-type IBC solar battery patch connection and preparation method thereof, component and system |
| CN106920854B (en) * | 2017-04-20 | 2018-07-31 | 泰州中来光电科技有限公司 | A kind of densely arranged solar cell string and preparation method and its component, system |
| CN107195702A (en) * | 2017-05-19 | 2017-09-22 | 晶澳（扬州）太阳能科技有限公司 | It is a kind of new without the full back contact solar cell piece of grid line |
| CN109004050A (en) * | 2017-06-07 | 2018-12-14 | 江苏赛拉弗光伏系统有限公司 | A kind of no hot spot imbrication photovoltaic module |
| CN109560146B (en) * | 2017-09-22 | 2021-02-23 | 比亚迪股份有限公司 | Battery with a battery cell |
| CN107863396A (en) * | 2017-11-02 | 2018-03-30 | 南京日托光伏科技股份有限公司 | A kind of back-contact solar module and preparation method |
| CN110010711A (en) * | 2019-04-24 | 2019-07-12 | 通威太阳能（成都）有限公司 | A kind of solar cell module and its processing technology of the front without welding |
| CN111628028B (en) * | 2020-06-23 | 2024-09-24 | 陕西众森电能科技有限公司 | Back contact solar cell module adopting conductive composite film for series connection |
| CN112701169A (en) * | 2020-12-14 | 2021-04-23 | 百力达太阳能股份有限公司 | Solar cell for enhancing welding strength after cutting and cutting method thereof |
| CN112909132A (en) * | 2021-03-22 | 2021-06-04 | 江苏赛拉弗光伏系统有限公司 | Preparation method of single crystalline silicon solar cell capable of increasing output voltage |
| CN113745373A (en) * | 2021-08-31 | 2021-12-03 | 泰州中来光电科技有限公司 | Back contact solar cell, back contact solar module, preparation method and system |
| CN114023832A (en) * | 2021-11-05 | 2022-02-08 | 晶科能源(海宁)有限公司 | Main-grid-free IBC battery unit and IBC battery assembly |
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