[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

CN104269454B - High-efficiency back contact solar cell back sheet without main grids, high-efficiency back contact solar cell assembly without main grids and manufacturing technology - Google Patents

High-efficiency back contact solar cell back sheet without main grids, high-efficiency back contact solar cell assembly without main grids and manufacturing technology Download PDF

Info

Publication number
CN104269454B
CN104269454B CN201410508549.1A CN201410508549A CN104269454B CN 104269454 B CN104269454 B CN 104269454B CN 201410508549 A CN201410508549 A CN 201410508549A CN 104269454 B CN104269454 B CN 104269454B
Authority
CN
China
Prior art keywords
electrode
layer
solar cell
piece
back contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201410508549.1A
Other languages
Chinese (zh)
Other versions
CN104269454A (en
Inventor
林建伟
夏文进
孙玉海
张育政
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JOLYWOOD (SUZHOU) SUNWATT CO Ltd
Original Assignee
JOLYWOOD (SUZHOU) SUNWATT CO Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by JOLYWOOD (SUZHOU) SUNWATT CO Ltd filed Critical JOLYWOOD (SUZHOU) SUNWATT CO Ltd
Priority to CN201410508549.1A priority Critical patent/CN104269454B/en
Publication of CN104269454A publication Critical patent/CN104269454A/en
Application granted granted Critical
Publication of CN104269454B publication Critical patent/CN104269454B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042PV modules or arrays of single PV cells
    • H01L31/048Encapsulation of modules
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0224Electrodes
    • H01L31/022408Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022441Electrode arrangements specially adapted for back-contact solar cells
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)

Abstract

The invention relates to the field of solar cells, in particular to a high-efficiency back contact solar cell back sheet without main grids, a high-efficiency back contact solar cell assembly without main grids and a manufacturing technology. The high-efficiency back contact solar cell back sheet without the main grids is characterized by sequentially comprising an electric connection layer and a basic layer from top to bottom, and the electric connection layer and the basic layer are connected through adhesive. The electric connection layer comprises multiple wires which are arrayed in parallel and can be used for being electrically connected with a back contact cell. The back contact solar cell back sheet, the back contact solar cell assembly and the manufacturing technology have the advantages of being capable of effectively preventing P electrodes and N electrodes from short-circuiting, low in cost and high in subfissure resistance, efficiency and stability.

Description

Without main grid, high efficiency back contact solar cell backboard, component and preparation technology
Technical field
The invention belongs to area of solar cell, and in particular to a kind of to carry on the back without main grid, high efficiency back contact solar cell Plate, component and preparation technology.
Background technology
The energy is the material base of mankind's activity, with the continuous development and progress of human society, to the demand of the energy with Day all increasings.Traditional fossil energy belongs to non-renewable energy resources and has been difficult to continue the demand for meeting social development, therefore the whole world Various countries' research in recent years to new forms of energy and renewable origin and using increasingly burning hot.Wherein solar energy generation technology has the sun Light is converted into electric power, using simple and environmentally-friendly pollution-free, energy utilization rate is high etc., advantage is particularly subject to universal attention.Too It is that photo-generated carrier is produced in the case of sunlit using large-area P-N junction diode to generate electricity that sun can generate electricity.
In prior art, occupy an leading position and large-scale commercial crystal-silicon solar cell, its launch site and launch site Electrode is respectively positioned on battery front side (phototropic face), i.e. main grid, auxiliary grid line and is respectively positioned on battery front side.Due to solar energy level silicon material electronicses Diffusion length is shorter, and launch site is conducive to improving the collection efficiency of carrier positioned at battery front side.But due to the grid of battery front side Line blocks part sunlight (about 8%), so that the effective area of shining light of solaode is reduced and have lost one therefrom Portion of electrical current.In addition when cell piece is connected, need to be welded to another piece of battery from the front of one piece of battery with tin-coated copper strip The back side, if using thicker tin-coated copper strip the fragmentation of cell piece can be caused because its is overly hard, if but with thin wide plating Stannum copper strips can cover excessive light again.Therefore, which kind of tin plating welding the loss that series resistance brings can all be brought using And optical loss, while being unfavorable for the sheet of cell piece.In order to solve above-mentioned technical problem, those skilled in the art are by front Electrode is transferred to cell backside, develops without main grid back contact solar cell, and back contacts solar cell refers to the transmitting of battery Region electrode and base electrode are respectively positioned on a kind of solar cell of cell backside.Back contact battery has many good qualities:1. efficiency high, by Lose in the shading for completely eliminating front gate line electrode, so as to improve battery efficiency.2. the sheet of battery, string are capable of achieving All in cell backside, there is no the connection from front to the back side can use thinner silicon chip to the metal connector device that connection is used, So as to reduces cost.3. more attractive, the front color even of battery meets the esthetic requirement of consumer.
The back contacts solar cell various structures such as including MWT, EWT and IBC.Back contacts solar cell large-scale commercial applications metaplasia It is how the series connection of back contacts solar cell is got up and is fabricated to solar components by high efficiency, low cost that the key of product is.MWT The common preparation method of component is to use composite conducting backboard, and conducting resinl is applied in conductive backings, is corresponded on top of the encapsulation material Position punching make conducting resinl through encapsulating material, back contacts solar cell is accurately placed makes conductive back on encapsulating material Conductiving point on plate is contacted with the electrode on back contacts solar cell by conducting resinl, and upper strata EVA is then laid on cell piece And glass, then the module upset being entirely laminated is laminated into laminating machine.There is following defect in this technique:1st, institute The composite conducting backboard for using is the composite conducting metal forming in backboard, usually Copper Foil, and needs to carry out laser incising to Copper Foil Erosion or chemical attack.Because laser ablation is for the fine operation of simple graph, production efficiency slow for complex pattern etching speed It is low, and chemical attack is except needing previously prepared complex-shaped and corrosion resistant mask also to there is environmental pollution and corrosive liquid to height The corrosion of molecule base material.The conductivity type backplane manufacturing process for manufacturing in this way is complicated, and cost is high.2nd, need to sun electricity The encapsulating material of layer is punched out to make conducting resinl through encapsulating material after the piece of pond, because encapsulating material is typically viscoelastic body, Carry out accurate punching difficulty very big.3rd, need accurate spot gluing equipment by conductive glue in the relevant position of backboard, to MWT this Planting the less battery of back contacts point can also operate, back contact battery point of use that quantity big little to the back contacts such as IBC point area Gluing equipment cannot be realized at all.
P-N junction is positioned over cell backside by IBC technologies, and front is blocked while reduce the distance of electronics collection without any, Therefore cell piece efficiency can be increased substantially.IBC batteries front using shallow diffusion, be lightly doped and SiO2The technologies such as passivation layer subtract Few recombination losses, less region is limited in cell backside by diffusion region, these diffusion regions in cell backside into lattice arrangement, Diffusion region metal is contacted to be limited in the range of very little and is rendered as large number of fine contact point.IBC batteries reduce electricity The area in the re-diffusion area at the pond back side, the saturation dark current of doped region can significantly reduce, and open-circuit voltage and conversion efficiency are obtained To improve.Electric current is set to reduce in the transmission range of back surface by large number of little contact point collected current simultaneously, significantly Reduce the series resistance of component.
IBC back contact batteries enjoy industry to pay close attention to due to having the unapproachable high efficiency of conventional solaode, Jing becomes the study hotspot of solar battery technology of new generation.But IBC solar modules P-N junction position phase in prior art Neighbour is relatively closely and at the cell piece back side, it is difficult to component is connected and be prepared into IBC battery modules.To solve the above problems, Prior art also occurs in that various to improvement of the IBC without main grid back contact solar cell, and Sunpower companies are by adjacent P Or N emitter stages by the thin grid line of silver paste silk screen printing be connected most at last electric current is guided to cell piece edge, cell piece edge print The larger solder joint of brush reuses connect band carries out welding series connection, and current field of solar energy forms electricity using screen printing technique always That what is flowed confluxes, such as the patent 201310260260.8 of newest application, and 201310606634.7,201410038687.8, 201410115631.8。
Patent WO2011143341A2 discloses a kind of without main grid back contact solar cell, including substrate, multiple adjacent P doped layers and N doped layers be located at substrate back, P doped layers and N doped layers are laminated with metal contact layer, and P doped layers and Passivation layer is provided between N doped layers and metal contact layer, there is substantial amounts of nanometer connecting hole, the nanometer on the passivation layer Connecting hole connects P doped layers and N doped layers and metal contact layer;But the invention can make electricity using nano-pore connection metal contact layer Resistance increase, and manufacturing process is complicated, there is higher requirement to manufacturing equipment, and the invention can not be multi-disc solaode and electricity Articulamentum is integrated into a module, and cell piece be integrated into after solar module not only ease of assembly into component, and And facilitate connection in series-parallel between adjusting module, such that it is able to the series-parallel system of cell piece in convenient adjustment solar module, Reduce the connection resistance of component.
Patent US 20110041908A1 discloses a kind of back side and has elongated interdigital emitter region and base region The back contact solar battery and its production method in domain, with Semiconductor substrate, the backside surface of Semiconductor substrate is provided with Elongated base region and elongated emitter region, base region is base semiconductor type, and emitter region is provided with and the base The contrary emitter semiconductor type of pole semiconductor type;Elongated emitter region is provided with for making electrical contact with the thin of emitter region Long emitter electrode, elongated base region is provided with the elongated base electrode for making electrical contact with base region;Wherein elongated emitter stage Region has the structure width less than elongated emitter electrode, and wherein elongated base region has than the elongated base stage electricity Minimum structure width.The elongated conductive part that the invention is adopted makes solaode have good current collection performance, however it is necessary that There is the substantial amounts of electric-conductor of setting to carry out effective collected current, therefore cause manufacturing cost to increase, processing step is complicated.
Patent EP2709162A1 discloses a kind of solaode, applies to without main grid back contact solar cell, open The electrode contact unit for being separated from each other and being alternately arranged, by the connector connection electrode osculating element of longitudinal direction, forms " work " Shape electrode structure;It is for the first time cell piece and electrode contact unit but this kind of structure is connected twice on cell piece Connection, then also needs to by connector connection electrode osculating element, and connection twice brings technologic complexity, Yi Jizao Into excessive electrode contact point, " disconnection " or " mistake is even " is likely to result in, is unfavorable for without the whole of main grid back contact solar cell Body performance.
Because the invention in the current field carries out electric current collection using thin grid line, still use on 5 cun of cell pieces, but Series resistance rising and fill factor, curve factor decline etc. will be run in prior art on generally popular 6 cun or bigger of silicon chip to ask Topic, causes manufactured component power seriously to reduce.IBC batteries in the prior art can also be in adjacent P or N emitter stages Between the relatively wide silver paste grid line of silk screen printing reducing series resistance, but because the increase of silver consuming amount brings drastically going up for cost Rise, while the insulation effect that wide grid line also can be produced between P-N is deteriorated, the problem easily leaked electricity.
And can be formed with the wire that P emitter stages and N emitter stages connect in prior art intersects or it is adjacent relatively closely, the sun Energy battery easily forms short-circuit after touching using a period of time aging and external force, has a strong impact on the globality of battery component Energy.
The content of the invention
Present invention aims to the deficiencies in the prior art, there is provided one kind can effectively prevent P electrode and N electrode short Road, it is resistance to it is hidden split, high efficiency, high stability without main grid, high efficiency back contact solar cell backboard, component and preparation technology, There is preparation process is simple, the advantage that cost is substantially reduced simultaneously.
To reach above-mentioned purpose, the technical solution used in the present invention is:
One kind is described without main grid, high efficiency back contact solar electricity without main grid, high efficiency back contact solar cell backboard Pond backboard is from top to bottom followed successively by electric connection layer and basic unit, is connected by bonding agent between the electric connection layer and basic unit;It is described Electric connection layer includes some conductor wires that can be used for electrical connection back contact battery arranged in parallel.
Keeper is provided with the electric connection layer of the backboard, alignment when being easy to cell piece to be connected with electric connection layer.
The distance between described adjacent conductive line is 0.1mm~20mm.
The material of described conductor wire is any one in gold, silver, copper, aluminum, steel, copper cover aluminum, copper covered steel;The conductor wire Shape of cross section be it is circular, square, oval in any one;The circumscribed circle diameter of the shape of cross section be 0.05mm~ 1.5mm。
Described conductor wire surface is coated with low melting material layer or is coated with conductive adhesive layer;The low melting material be stannum, Any one in leypewter, sn-bi alloy or tin-lead silver alloy;Coating or conductive adhesive layer thickness are 5 μm~50 μm.
The quantity of the conductor wire is 10~500.
The bonding agent is ethylene-vinyl acetate copolymer, vistanex, epoxy resin, polyurethane resin, acrylic acid Any one in resin, organic siliconresin.
The both sides of the electric connection layer are provided with bus bar electrode.
The surface of the bus bar electrode has concaveconvex shape
One kind without main grid, high efficiency back contact solar cell component, including the front layer material, the encapsulation that from top to bottom connect Material, solar cell layer, back contact solar cell backboard, it is characterised in that the solar cell layer includes several electricity Pond piece, the shady face of the cell piece is arranged with the P electrode being connected with p-type doped layer and the N electrode being connected with n-type doping layer, The cell piece is electrically connected with the electric connection layer on backboard, and the back contact solar cell backboard is above-mentioned without main grid, height Efficiency back contact solar cell backboard.
Described is provided with insulating barrier without between main grid, high efficiency back contact solar cell component P electrode and N electrode, The insulating barrier is thermoplastic resin or thermosetting resin.
The resin is ethylene-vinyl acetate copolymer, vistanex, epoxy resin, polyurethane resin, acrylic acid tree Any one or two kinds of combinations in fat, organic siliconresin.
Described is electric by point-like P with the P electrode without main grid, the conductor wire of high efficiency back contact solar cell component Pole or line style P electrode are electrically connected, and the conductor wire is electrically connected with the N electrode by point-like N electrode or line style N electrode.
A diameter of 0.4mm~1.5mm of the point-like P electrode, two adjacent point-like P connected on the same conductor wire The distance between electrode is 0.7mm~10mm, and the width of the line style P electrode is 0.4mm~1.5mm;The point-like N electrode A diameter of 0.4mm~1.5mm, the distance between the two adjacent point-like N electrodes connected on the same conductor wire for 0.7mm~ 10mm, the width of the line style N electrode is 0.4mm~1.5mm.
The total number of the point-like P electrode and the point-like N electrode is 1000~40000.
Any one in silver paste, conducting resinl, scolding tin is coated with the Spot electrodes or wire-type of electrode.
The conducting resinl is low resistivity conductive bonded adhesives, and its main component is conducting particles and polymeric adhesive.
Conducting particles in the conducting resinl is any one in gold, silver, copper, gold-plated nickel, silver-plated nickel or silver-plated copper or several Plant combination;Being shaped as the conducting particles is spherical, any one or several combinations in lamellar, olive-shaped, needle-like;Conducting particles Particle diameter be 0.01 μm~5 μm.
Polymeric adhesive in the conducting resinl is epoxy resin, polyurethane resin, acrylic resin, organic siliconresin In any one or two kinds of combination.
The electric connection layer sub-module of the solar cell backboard is arranged, and is loaded onto and formed after cell piece battery module, dereliction Cell piece in cell piece number that grid, high efficiency back contact solar cell component are included, battery module number, battery module The quantity of number can be limited by below equation;Z represents the total cell piece number of battery component, and Y represents the individual of the battery module Number, X represents the cell piece number that the battery module is included, wherein 1≤Y≤X≤Z;X × Y=Z.
The battery module is connected by the bus bar electrode that electric connection layer both sides are arranged, the battery of the solar cell layer Piece number is 1~120, wherein, including 1~120 battery module, the battery module includes 1~120 cell piece.
A kind of preparation method without main grid, high efficiency back contact solar cell component, comprises the following steps,
Step one:Prepare electric connection layer:In backboard side coated with adhesive, by leading for connection corresponding with cell piece N electrode Electric wire and the conductor wire of connection corresponding with cell piece P electrode are alternately arranged, and fix with the backboard for being coated with binding agent;
Step 2:Solar cell layer is prepared, shady face is provided with the P electrode that is connected with p-type doped layer and is mixed with N-type The cell piece of the N electrode of diamicton connection is electrically connected with the electric connection layer on backboard, and the P bus bar electrodes and the N are confluxed Strip electrode is arranged at the electric connection layer both sides, connects the bus bar electrode on electric connection layer, and the cell piece constitutes solar energy Battery layers;
Step 3:It is successively that the prepared backboard with solar cell layer of front layer material, encapsulating material and step 2 is suitable Sequence is laminated, and is then heated lamination and is obtained battery component.
In step 2, the P electrode and N electrode on the cell piece has in the horizontal plane mirror symmetrical structure, works as battery When the quantity of piece is more than 1, the mode of assembled battery piece is, after first piece of cell piece is connected with electric connection layer, by second block of electricity Pond piece rotates 180 degree in horizontal plane, and the alignment of two panels battery edge makes the P electrode and first piece of cell piece on second piece of cell piece On N electrode the 3rd piece of cell piece is normally placed on a conductor wire, then, make P electrode on the 3rd piece of cell piece and the The N electrode of two pieces of cell pieces repeats aforesaid operations and forms cascaded structure on a conductor wire, forms solar cell layer.
Without arranging keeper on main grid, the electric connection layer of high efficiency back contact solar cell component;
In step 2 the electric connection mode of cell piece and conductor wire be p-type doped layer by being screen printed onto cell piece and Conducting resinl is coated in n-type doping layer, then the cell piece for having coated conducting resinl is put by the keeper on the electric connection layer Be placed on the electric connection layer, the conducting resinl solidify to form P electrode and N electrode in heating process, it is heated after make it is described Conductor wire forms Ohmic contact with the p-type doped layer or the n-type doping layer by the conducting resinl, realizes conductor wire with electricity The electrical connection of pond piece;
Cell piece is by being coated with using plating process on the conductor wire with another kind of electric connection mode of conductor wire Low melting material connects, and then the cell piece is positioned over into the electric connection layer by the keeper on the electric connection layer On, make the conductor wire pass through low melting material melting with the p-type doped layer or the n-type doping layer after heated process Connect fixation and form P electrode and N electrode, realize the electrical connection of conductor wire and cell piece, the low melting material is plating scolding tin, tin-lead Any one in alloy, sn-bi alloy or tin-lead silver alloy.
Described heating process uses heating cushion in cell piece front;The heating-up temperature of the heating cushion is 40~80 DEG C.
Described mode of heating is any one or several combinations in infra-red radiation, Resistant heating, Hot-blast Heating, is heated Temperature is 150~500 DEG C.
The plating process is any one in hot-dip, plating or chemical plating.
Without silk screen printing at the insulating barrier of main grid, high efficiency back contact solar cell component between P electrode and N electrode Upper thermoplastic resin or thermosetting resin.
In without main grid, the preparation method of high efficiency back contact solar cell component, the parameter root being laminated described in step 3 Set according to the vulcanization characteristics of encapsulating material, the encapsulating material is EVA, laminating parameters are 145 DEG C of laminateds 16 minutes.
Because above-mentioned technical proposal is used, the present invention has the advantage that compared with prior art:
1st, this invention removes the shading of front gate line electrode is lost, so as to improve battery efficiency;
2nd, the sheet of the achievable battery of the present invention, the metal connector device being used in series is eliminated all in cell backside Connection of the past battery from front to the back side, thus thinner silicon chip can be used, so as to reduces cost;
3rd, back contacts solar cell of the invention is generally applicable to the various structures such as MWT, EWT and IBC, and practicality is higher;
4th, the integrated photovoltaic system of the component of the technology of the present invention production can be avoided thoroughly because one piece of cell piece occurs hidden splitting And lose certain electric current and cause the electric current of whole group string that the problem for substantially reducing will occur, due to the proposed nothing of this invention Main grid back of the body winding displacement technology realizes the Mulit-point Connection between electric conductor and cell piece, manufactures, transports so as to improve whole system Hidden the splitting produced during defeated, installation and use has high tolerance with fine fisssure, embodies good overall performance;
5th, electrode of solar battery is contacted with electric connection layer multiple spot distributing in the present invention, is reduced electronics and is collected distance, greatly The series resistance of amplitude reduction component;
6th, the present invention realizes the collection of battery electron using electric connection layer is prepared without main grid winding displacement technology so that prepare Technique is simpler, greatly reduces the production cost of solaode;
7th, it is used herein without main grid back contact solar cell without the need for main grid, substantially reduce the usage amount of silver paste, make The manufacturing cost of back contact battery is substantially reduced;
8th, the setting of present invention setting bus bar electrode concaveconvex shape can increase the contact area of electrode, reduce resistance.
The technology of the present invention can realize the welding between electric conductor and cell piece, can increase substantially the long-term of component Reliability.It is Mulit-point Connection between IBC batteries and electric conductor in component prepared by this technology, junction point distribution is more dense, can be with Thousand of or even tens of thousands of are reached, is more optimized with the path of fine fisssure position electric current conduction in hidden the splitting of silicon chip, therefore because fine fisssure is made Into loss be greatly reduced, the Quality advance of product.Generally in photovoltaic system, cell piece generation is hidden to split rear cell piece top Subregion can depart from main grid, and the electric current that this region produces cannot be collected.Photovoltaic system is all by the way of series connection Matrix is formed, with obvious bucket effect, the whole group string when the generation of a piece of cell piece is hidden to be split and lose certain electric current Electric current will occur significantly to reduce, so as to the generating efficiency for causing whole group string is greatly lowered.The group produced using the technology The integrated photovoltaic system of part can ideally avoid problems from occurring, and winding displacement technology is carried on the back without main grid due to what this invention was proposed The Mulit-point Connection between electric conductor and cell piece is realized, whole photovoltaic system is made to manufacturing, transporting, install and used Hidden the splitting produced in journey has high tolerance with hallrcuts.Can be illustrated with a simply example, conventional art life The solar components of product are like common glass, and a point has been crashed monolithic glass and just crushed, and with without main grid back of the body row The component of line technology production seems then doubling safety glass, and fragmentation seems in appearance unsightly, but entirely The function of keeping out wind and rain of glass also exists.The traditional set of cells string technique of this technological break-through, makes battery arrangement freer, tightlier It is close, it is expected to using the component of above-mentioned technology less lighter, for the project development of downstream, this means that less in installation accounting for Ground area, lower roof load-bearing requirements and lower human cost.Low cost, efficiently can be solved without main grid back of the body winding displacement technology The connectivity problem of the back contacts solar cell of rate, replaces silver-colored main grid to reduce into by using copper cash or other conductive metal materials This, realizes the real industrial-scale production of back contacts solar cell, and reduces cost while efficiency is improved, is photovoltaic system There is provided in hgher efficiency, cost it is lower, stability is higher, it is resistance to it is hidden split outstanding photovoltaic module, greatly promote photovoltaic system with pass The competitiveness of the system energy.
Another advantage without main grid high efficiency back contact solar cell backboard that the present invention is used is that have positioning mark Show, in the ad-hoc location of back contact solar cell backboard anchor point is printed with.Back contact solar cell backboard anchor point Design principle is that the relative position of the metal wire on anchor point and backboard is accurately fixed, and can be easy to carrying on the back by CCD technologies Anchor point on plate is identified, by recognizing that anchor point accurately can will scribble the back contact solar cell piece of conducting resinl The relevant position of back contact solar cell backboard is positioned over, P electrode and N electrode is made on back contact battery piece with conductive backings Corresponding conductive wire is contacted by conducting resinl.
It is used herein without main grid back contact solar cell overall structure with routine without main grid back contact solar Battery is basically identical, but electric in its P after silver paste sintering and the test of power stepping are completed without main grid back contact solar cell Thermoplasticity or heat cured resin on silk screen printing at insulating barrier between pole and N electrode.On the one hand this resin can play point From the effect of insulation P electrode and N electrode, bonding is on the one hand played in lamination process without main grid back contact solar cell piece and The effect of backboard.
Description of the drawings
Fig. 1 point-like is without main grid back contact solar cell piece schematic rear view
Fig. 2 line styles are without main grid back contact solar cell piece schematic rear view
Fig. 3 conductor wire sectional views (Fig. 3 a, monolayer material conductor wire surface chart;Fig. 3 b, with materials at two layers conductor wire section Figure;Fig. 3 c, with trilaminate material conductor wire sectional view)
Fig. 4 contains schematic diagram of the electric connection layer without main grid, high efficiency back contact solar cell backboard
Fig. 5 embodiments 1 and 2 contain the solar module office without main grid, high efficiency back contact solar cell backboard Portion's sectional view
The solar cell layer partial schematic diagram of Fig. 6 solar modules
Fig. 7 embodiments 3 contain the local without main grid, the solar module of high efficiency back contact solar cell backboard Sectional view
1st, be copper, the metal material such as aluminum or steel, 2, be the metal materials such as the aluminum different from 1 or steel;3rd, be stannum, tin-lead, stannum Bismuth or tin-lead silver metal solder;4th, n-type doping layer;41st, point-like N electrode;42nd, line style N electrode area;43 and N electrode connection N conductor wires;44th, line style N electrode;5th, p-type doped layer;51st, point-like P electrode;52nd, line style P electrode area;53 and P electrode connection P conductor wires;54th, line style P electrode;6th, n type single crystal silicon matrix;7th, insulating barrier;8th, front layer material;81st, back contact solar electricity Pond backboard;82nd, encapsulating material;9th, bus bar electrode;91st, N bus bar electrodes;92nd, P bus bar electrodes;10th, solaode Layer;11st, basic unit;12nd, electric connection layer.
Specific embodiment
Embodiment 1
As shown in figure 4, one kind is without main grid, high efficiency back contact solar cell backboard, including electric connection layer 12 and basic unit 11, solar cell backboard wide cut 651mm, length 662mm.Connected by bonding agent between electric connection layer 12 and basic unit 11;Electricity Articulamentum 12 includes some conductor wires that can be used for electrical connection back contact battery piece arranged in parallel.
As described in Figure 5, it is a kind of including the above-mentioned solar battery group without main grid, high efficiency back contact solar cell backboard Part, including the front layer material 8, solar cell layer 10, the backboard 81 that from top to bottom connect, wherein, if solar cell layer 10 includes A dry cell piece, the shady face of cell piece is arranged with the P electrode being connected with p-type doped layer 5 and the N that is connected with n-type doping layer 5 is electric Pole.It is point-like P electrode 51 in P electrode, is point-like N electrode 41 in N electrode, point-like P electrode 51 and point-like N electrode 41 is alternateed The total number of arrangement, point-like P electrode 51 and point-like N electrode 41 is 1000~40000.Point-like P electrode 51 it is a diameter of The distance between 0.5mm, adjacent point-like P electrode 51 are 2mm.A diameter of 0.6mm of point-like N electrode 41, adjacent point-like N electrode 41 The distance between be 2mm, the centre distance between the line of point-like P electrode 51 and the line of point-like N electrode 41 be 1mm.Cell back Face insulating resin uses EVA resin.It is that 156 × 156mm back contact batteries piece is corresponding with 150 conductor wires by every area, Wherein 75 are electrically connected by point-like P electrode 51 with the P electrode of cell piece, and remaining 75 by point-like N electrode 41 and N electrode Electrical connection.Cell conversion efficiency is 20.3%.
It is a kind of including the above-mentioned preparation without main grid, the solar module of high efficiency back contact solar cell backboard 81 Method is comprised the following steps:
1st, prepare without main grid, high efficiency back contact solar cell backboard 81:As shown in figure 4, every back contact battery piece Correspondence is arranged 150 conductor wires in corresponding 156*156mm areas, wherein 75 are corresponding with point-like N electrode 41, it is remaining 75 It is corresponding with point-like P electrode 51.In basic unit 11 side coating adhesive for polyurethane, will with the corresponding conductor wire of point-like N electrode 41 and It is alternately arranged with the corresponding conductor wire of point-like P electrode 51, conductor wire is fixed on by polyacrylic acid adhesive for the phase of backboard 81 Position is answered, prepares as shown in Figure 4 without main grid, high efficiency back contact solar cell backboard 81, and be followed successively by from top to bottom First row winding displacement is to the 4th row's winding displacement.
Conductive line length corresponding with point-like N electrode 41 is 154mm, and conductive line length corresponding with point-like P electrode 51 is 298mm, is alternately arranged 600 conductor wires, becomes first row bus-bar construction as shown in Figure 4, i.e., often row can correspond to 4 156* The back contact battery piece of 156mm areas;Arrangement second row winding displacement, by 300 with the corresponding length of point-like P electrode 51 be 298mm Conductor wire arrangement so as in first row bus-bar construction, with the corresponding conductor wire of point-like N electrode 41 on the same line;Row The 3rd row's winding displacement is arranged, 300 conductor wires with the corresponding length of point-like N electrode 41 for 298mm is arranged so as to arrange with second row In line structure, with the corresponding conductor wire of point-like P electrode 51 on the same line;The 4th row's winding displacement is arranged, by 300 and point-like P The corresponding length of electrode 51 is arranged for the conductor wire of 154mm so as to corresponding with point-like N electrode 41 with the 3rd row's bus-bar construction Conductor wire on the same line.
As shown in the 3a figures in Fig. 3, conductor wire is aluminium wire, and cross sectional dimensions are 0.7*0.2mm.Using polyacrylic acid gluing Tinsel is fixed on the relevant position of backboard 81 for agent.
2nd, solar cell layer is prepared:Using being screen printed onto on cell piece on all contacting points positions, uniform coating is conductive Glue, forms point-like P electrode 51 and point-like N electrode 41.Conductive glue amount is 0.2mg on each contact point.The high score of conducting resinl Sub- bonding agent uses the epoxy resin of heat cure, and the particle diameter of wherein conducting particles is 0.3 μm of flake silver powder.As shown in fig. 6, will The first piece back contact battery piece for scribbling conducting resinl is positioned according to the keeper on backboard 81, is positioned over the upper left of backboard 81 Then second back contact battery piece is rotated 180 ° by angle, hot setting in horizontal plane, when two panels battery edge aligns, is made Point-like P electrode 51 is exactly in and is led with the same of first piece back contact battery point-like N electrode 41 on second back contact battery piece On electric wire.The like form cascaded structure as shown in Figure 6.Laying is completed into as shown in Figure 6 in the both sides of electric connection layer 12 Using the general busbar of the routine of 5 × 0.22mm cross-sectional areas the conductor wire being connected with point-like P electrode 51 is confluxed by P respectively Strip electrode 92 connects, and the conductor wire being connected with point-like N electrode 41 is connected by N bus bar electrodes 91.4 strings are produced, 4 are often gone here and there Piece, the solar cell layer 10 of totally 16 back contacts.
3rd, solar module is prepared:As shown in figure 5, being sequentially placed last layer EVA works on solar cell layer 10 It is encapsulating material 82 and glass as front layer material 8.By after stacking module send into laminating machine be laminated, laminating parameters according to The vulcanization characteristics of EVA is set, usually 145 DEG C of laminateds 16 minutes.Finally the module that lamination is completed is carried out gold is installed Belong to frame, rosette is installed and power test and visual examination is carried out.
The power parameter of above-mentioned 16 back contacts components is as follows:
Embodiment 2
As shown in figure 4, one kind is without main grid, high efficiency back contact solar cell backboard 81, including electric connection layer 12 and base Layer 11, wide cut 986mm of solar cell backboard 81, length 1662mm.Connected by bonding agent between electric connection layer 12 and basic unit 11 Connect;Electric connection layer 12 includes some conductor wires that can be used for electrical connection back contact battery arranged in parallel.
As described in Figure 5, it is a kind of including the above-mentioned solaode without main grid, high efficiency back contact solar cell backboard 81 Component, including the front layer material 8, solar cell layer 10, the backboard 81 that from top to bottom connect, wherein, solar cell layer 10 includes Several cell pieces, the shady face of cell piece is arranged with the P electrode being connected with p-type doped layer 4 and the N being connected with n-type doping layer 5 Electrode.It is point-like P electrode 51 in P electrode, is point-like N electrode 41 in N electrode, point-like P electrode 51 and point-like N electrode 41 is mutually handed over Total number for arrangement, point-like P electrode 51 and point-like N electrode 41 is 1000~40000.Point-like P electrode 51 it is a diameter of The distance between 0.8mm, adjacent point-like P electrode 51 are 4mm.A diameter of 0.8mm of point-like N electrode 41, adjacent point-like N electrode 41 The distance between be 4mm, the centre distance between the line of point-like P electrode 51 and the line of point-like N electrode 41 be 1mm.Cell back Face insulating resin uses EVA resin.Cell conversion efficiency 20.3%.By every area be 156 × 156mm back contact batteries piece with 76 conductor wires are relative, wherein 38 are electrically connected by point-like P electrode 51 with the P electrode of cell piece, remaining 38 pass through point Shape N electrode 41 is electrically connected with N electrode.
It is a kind of including the above-mentioned preparation without main grid, the solar module of high efficiency back contact solar cell backboard 81 Method is comprised the following steps:
1st, prepare without main grid, high efficiency back contact solar cell backboard 81:As shown in figure 4, every back contact battery piece Correspondence is arranged 76 conductor wires in correspondence 156*156mm areas, wherein 38 corresponding with point-like N electrode 41, remaining 38 and The correspondence of point-like P electrode 51.In the side coating adhesive for polyurethane of basic unit 11, with the corresponding conductor wire of point-like N electrode 41 and point-like P The corresponding conductor wire of electrode 51 is alternately arranged.Conductor wire is fixed on by polyacrylic acid adhesive for the relevant position of backboard 81, Prepare as shown in Figure 4 without main grid, high efficiency back contact solar cell backboard 81, and be followed successively by first row row from top to bottom Line is to the 6th row's winding displacement.
Conductive line length corresponding with point-like N electrode 41 is 154mm, and conductive line length corresponding with point-like P electrode 51 is 298mm, is alternately arranged 760 conductor wires, becomes first row bus-bar construction as shown in Figure 4, i.e., often row can correspond to 10 156* The back contact battery piece of 156mm areas;Arrangement second row winding displacement, by 380 with the corresponding length of point-like P electrode 51 be 298mm Conductor wire arrangement so as in first row bus-bar construction, with the corresponding conductor wire of point-like N electrode 41 on the same line;Row The 3rd row's winding displacement is arranged, 380 conductor wires with the corresponding length of point-like N electrode 41 for 298mm is arranged so as to arrange with second row In line structure, with the corresponding conductor wire of point-like P electrode 51 on the same line;By the arrangement of second row winding displacement and the 3rd row's winding displacement Mode, is arranged in order the 4th and the 5th row's winding displacement;The 6th row's winding displacement is arranged, is with the corresponding length of point-like P electrode 51 by 380 The conductor wire arrangement of 154mm so as to in the 5th row's bus-bar construction, with the corresponding conductor wire of point-like N electrode 41 in same straight line On.
As shown in the 3c figures in Fig. 3, conductor wire is the tin metal silk with three-decker, including innermost layer steel wire 3 is straight Footpath is 0.8mm, the layers of copper in intermediate layer, thickness 0.2mm, and outermost layer is tin coating, thickness 0.3mm.The cross section of tin metal silk For circle, diameter 1.3mm..
2nd, solar cell layer 10 is prepared:Led using uniform coating is screen printed onto on cell piece on all contacting points positions Electric glue, forms point-like P electrode 51 and point-like N electrode 41.Conductive glue amount is 25mg on each contact point.The high score of conducting resinl Sub- bonding agent uses the polyurethane resin of heat cure, and conducting particles therein is the gold-plated nickel ball of 0.5 μm of particle diameter.Conduction will be scribbled The first piece back contact battery piece of glue is positioned according to the keeper on backboard 81, is positioned over the upper left corner of backboard 81, high temperature Solidification, then rotates 180 ° by second back contact battery piece in horizontal plane, when two panels battery edge aligns, makes second back of the body Point-like P electrode 51 on contact cell piece is exactly in and is in same with the point-like N electrode 41 in first piece back contact battery On conductor wire.The like form cascaded structure as shown in Figure 6.By laying complete it is as shown in Figure 6 in electric connection layer 12 The conductor wire being connected with point-like P electrode 51 is passed through P by both sides respectively using the general busbar of routine of 5 × 0.22mm cross-sectional areas Bus bar electrode 92 connects, and the conductor wire being connected with point-like N electrode 41 is connected by N bus bar electrodes 91.6 strings are produced, often String 10, the solar cell layer 10 of totally 60 back contacts.
3rd, solar module is prepared:As shown in figure 5, being sequentially placed last layer EVA works on solar cell layer 10 It is encapsulating material 82 and glass as front layer material 8.By after stacking module send into laminating machine be laminated, laminating parameters according to The vulcanization characteristics of EVA is set, usually 145 DEG C of laminateds 16 minutes.Finally the module that lamination is completed is carried out into metal edges Power test and visual examination are installed and carried out to frame and rosette.
The power parameter of above-mentioned 60 back contacts components is as follows:
Comparative example 1 and 2 using the back contact battery component of back of the body winding displacement technology production it can be seen that can obtain very high Fill factor, curve factor, so as to improve the generating efficiency of component, while the size of winding displacement is less, i.e. the more fill factor, curve factors of quantity of winding displacement Higher, component efficiency is also higher, with good economic benefit.
Embodiment 3
As shown in figure 4, one kind is without main grid, high efficiency back contact solar cell backboard 81, including electric connection layer 12 and base Layer 11, wide cut 986mm of solar cell backboard 81, length 1662mm.Connected by bonding agent between electric connection layer 12 and basic unit 11 Connect;Electric connection layer 12 includes some conductor wires that can be used for electrical connection back contact battery arranged in parallel.
As described in Figure 5, it is a kind of including the above-mentioned solaode without main grid, high efficiency back contact solar cell backboard 81 Component, including the front layer material 8, solar cell layer 10, the backboard 81 that from top to bottom connect, wherein, solar cell layer 10 includes Several cell pieces, cell piece includes n type single crystal silicon matrix 6, and its back side has p-type doped layer 5 and n-type doping layer 4, wherein P Type doped layer 5 is provided with line style P electrode area 52, and n-type doping layer 4 is provided with line style N electrode area 42, line style P electrode area 52 and line Type N electrode area 42 is alternately arranged.The width of line style P electrode area 52 is 0.7mm, the distance between adjacent line style P electrode area 52 for 2~ 3mm.The width of line style N electrode area 42 is 0.5mm, and the distance between adjacent line style N electrode area 42 is 2~3mm, line style P electrode area Centre distance between 52 and line style N electrode area 42 is 1.5~3mm.Cell conversion efficiency is 20.5%.Line style P electrode area 52 Insulating barrier is provided between line style N electrode area 42, insulating barrier is thermoplastic resin or thermosetting resin.It is by every area 156 × 156mm back contact batteries piece is corresponding with 76 conductor wires, wherein 38 by line style P electrode area 52 and the P of cell piece Type doped layer 5 is electrically connected, and remaining 38 are electrically connected by line style N electrode area 42 with n-type doping layer 4.
It is a kind of including the above-mentioned preparation without main grid, the solar module of high efficiency back contact solar cell backboard 81 Method is comprised the following steps:
1st, prepare without main grid, high efficiency back contact solar cell backboard 81:As shown in figure 4, every back contact battery piece Correspondence is arranged 76 conductor wires in corresponding 156*156mm areas, wherein 38 are corresponding with line style N electrode area 42, remaining 38 Root is corresponding with line style P electrode area 52.In the side coating adhesive for polyurethane of basic unit 11, corresponding with line style N electrode area 42 will lead The corresponding conductor wire of electric wire and line style P electrode area 52 is alternately arranged, and conductor wire is fixed on into backboard by polyacrylic acid adhesive 81 relevant position, prepare it is as shown in Figure 4 without main grid, high efficiency back contact solar cell backboard 81, and from top to bottom First row winding displacement is followed successively by the 6th row's winding displacement.
It is 154mm with the corresponding conductive line length in line style N electrode area 42, with the corresponding conductive line length in line style P electrode area 52 Spend for 298mm, be alternately arranged 76 conductor wires, become first row bus-bar construction as shown in Figure 4, i.e., often row can correspond to 10 The back contact battery piece of 156*156mm areas;Arrangement second row winding displacement, be with the corresponding length in line style P electrode area 52 by 380 The conductor wire arrangement of 298mm so as in first row bus-bar construction, with the corresponding conductor wire in line style N electrode area 42 with always On line;The 3rd row's winding displacement is arranged, 380 conductor wires with the corresponding length in line style N electrode area 42 for 298mm is arranged so as to In with second row bus-bar construction, with the corresponding conductor wire in line style P electrode area 52 on the same line;By second row winding displacement and the 3rd The arrangement mode of row's winding displacement, is arranged in order the 4th and the 5th row's winding displacement;The 6th row's winding displacement is arranged, by 380 and line style P electrode area 52 corresponding length are arranged for the conductor wire of 154mm so as to corresponding with line style N electrode area 42 with the 5th row's bus-bar construction Conductor wire is on the same line.
As shown in the 3b figures in Fig. 3, wherein, conductor wire is the tin metal silk with double-layer structure, including internal layer is copper Layer, diameter 0.3mm, outer layer is tin coating, thickness 0.025mm, and the alloying component of tin layers is tin-lead 60/40, i.e., containing 60% Stannum and 40% lead.The cross section of tin metal silk is circle, a diameter of 0.35mm.
2nd, solar cell layer 10 is prepared:It is fixed that first piece back contact battery piece is carried out according to the keeper on backboard 81 Position, is positioned over the upper left corner of backboard 81, then second back contact battery piece is rotated into 180 ° in horizontal plane, on two panels battery side Edge aligns, and the line style P electrode area 52 on second back contact battery piece is exactly in and the line in first piece back contact battery Type N electrode area 42 is on same conductor wire.The like form cascaded structure as shown in Figure 6.Finally by arrange 6 Go here and there, often string 10, the solar battery sheet of totally 60 back contacts and tin metal silk apply small pressure and carried out with hot blast Heating, melt tin-lead solder on tin metal silk and with back contact battery piece on electrode district Ohm connection, in line style P electricity Line style P electrode 54 is formed on polar region 52, line style N electrode 44 is formed in line style N electrode area 42, form series connection as shown in Figure 6 Structure.Use the general busbar of routine of 5 × 0.22mm cross-sectional areas respectively will be with the both sides of electric connection layer 12 that complete of laying The conductor wire of the connection of line style P electrode 51 is connected by P bus bar electrodes 92, and the conductor wire being connected with line style N electrode is confluxed by N Strip electrode 91 connects.6 strings as shown in Figure 6 are produced, often string 10, the solar cell layer 10 of totally 60 back contacts.Hot blast Heating-up temperature is 300~400 DEG C.
3rd, solar module is prepared:As shown in fig. 7, being sequentially placed last layer EVA works on solar cell layer 10 It is encapsulating material 82 and glass as front layer material 8.By after stacking module send into laminating machine be laminated, laminating parameters according to The vulcanization characteristics of EVA is set, usually 145 DEG C of laminateds 16 minutes.Finally the module that lamination is completed is carried out gold is installed Belong to frame, rosette is installed and power test and visual examination is carried out.
The power parameter of above-mentioned 60 back contacts components is as follows:
From the experiment parameter of embodiment 1-3, the employing back contacts solar cell backboard 81 prepared by the present invention is sealed The solar module of dress can obtain very high fill factor, curve factor, so as to improve the generating efficiency of component.Can effectively prevent Only short-circuit, resistance to hidden between P electrode and N electrode split, high efficiency, high stability, while the technology has preparation process is simple, into Originally the advantage for substantially reducing.
Above-mentioned detailed description is illustrating for the possible embodiments for invention, and the embodiment simultaneously is not used to limit this Bright the scope of the claims, all equivalence enforcements or change without departing from the present invention, should be contained in the scope of the claims of the present invention.
In addition, those skilled in the art can also the claims in the present invention scope of disclosure and spirit in do other forms with Various modifications, addition and replacement in details.Certainly, these are made according to present invention spirit various modifications, addition and replacement Deng change, all should be included within scope of the present invention.

Claims (5)

1. the preparation method without main grid, high efficiency back contact solar cell component, comprises the following steps,
Step one:Prepare backboard:In basic unit's side coated with adhesive, by the conductor wire of connection corresponding with cell piece N electrode and with The conductor wire of cell piece P electrode correspondence connection is alternately arranged, and fixes with the basic unit for being coated with binding agent, is formed and has electrical connection Layer and the backboard of basic unit, arrange keeper on electric connection layer;
Step 2:Solar cell layer is prepared, shady face is provided with the P electrode and and n-type doping layer being connected with p-type doped layer The cell piece of the N electrode of connection is electrically connected with the electric connection layer on backboard, and P bus bar electrodes and N bus bar electrodes are arranged at The electric connection layer both sides, connect the bus bar electrode on electric connection layer, and the cell piece constitutes solar cell layer;
In this step, the electric connection mode of cell piece and conductor wire is p-type doped layer and N-type by being screen printed onto cell piece Conducting resinl is coated on doped layer, the conducting resinl is low resistivity conductive bonded adhesives, and its main component is conducting particles and high score Sub- bonding agent, the particle diameter of the conducting particles is 0.01 μm~5 μm, then the cell piece for having coated conducting resinl is passed through into the electricity Keeper on articulamentum is positioned on the electric connection layer, and the conducting resinl solidify to form P electrode in heating process and N is electric Pole, it is heated after make the conductor wire form ohm by the conducting resinl with the p-type doped layer or the n-type doping layer to connect Touch, realize the electrical connection of conductor wire and cell piece;
Cell piece is by being coated with eutectic using plating process on the conductor wire with another kind of electric connection mode of conductor wire Point material connection, is then positioned over the cell piece on the electric connection layer, Jing by the keeper on the electric connection layer Make the conductor wire solid by low melting material fusion welding with the p-type doped layer or the n-type doping layer after heating process P electrode and N electrode are shaped as, the electrical connection of conductor wire and cell piece is realized, the low melting material is leypewter, the conjunction of stannum bismuth Any one in gold or tin-lead silver alloy;
Heating cushion is used in heating process in cell piece front;The heating-up temperature of the heating cushion is 40~80 DEG C;
Step 3:Successively by the order of the backboard with solar cell layer prepared by front layer material, encapsulating material and step 2 It is laminated, then heats lamination and obtain battery component.
2. the preparation method without main grid, high efficiency back contact solar cell component according to claim 1, its feature exists In the P electrode and N electrode on the cell piece has in the horizontal plane mirror symmetrical structure, when the quantity of cell piece is more than 1 When, the mode of assembled battery piece is, after first piece of cell piece is connected with electric connection layer, second piece of cell piece is revolved in horizontal plane Turnback, two panels battery edge alignment makes the N electrode in the P electrode and first piece of cell piece on second piece of cell piece at one On conductor wire, the 3rd piece of cell piece is then normally placed, make the P electrode on the 3rd piece of cell piece electric with the N of second piece of cell piece Pole is repeated aforesaid operations and forms cascaded structure on a conductor wire, forms solar cell layer.
3. the preparation method without main grid, high efficiency back contact solar cell component according to claim 1, its feature exists In plating process is any one in hot-dip, plating or chemical plating.
4. the preparation method without main grid, high efficiency back contact solar cell component according to claim 1, its feature exists In thermoplastic resin or thermosetting resin on silk screen printing at the insulating barrier between P electrode and N electrode.
5. the preparation method without main grid, high efficiency back contact solar cell component according to claim 1, its feature exists In the parameter of the lamination is set according to the vulcanization characteristics of encapsulating material, and the encapsulating material is EVA, and laminating parameters are 145 DEG C of laminateds 16 minutes.
CN201410508549.1A 2014-09-28 2014-09-28 High-efficiency back contact solar cell back sheet without main grids, high-efficiency back contact solar cell assembly without main grids and manufacturing technology Active CN104269454B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201410508549.1A CN104269454B (en) 2014-09-28 2014-09-28 High-efficiency back contact solar cell back sheet without main grids, high-efficiency back contact solar cell assembly without main grids and manufacturing technology

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201410508549.1A CN104269454B (en) 2014-09-28 2014-09-28 High-efficiency back contact solar cell back sheet without main grids, high-efficiency back contact solar cell assembly without main grids and manufacturing technology

Publications (2)

Publication Number Publication Date
CN104269454A CN104269454A (en) 2015-01-07
CN104269454B true CN104269454B (en) 2017-04-26

Family

ID=52160961

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201410508549.1A Active CN104269454B (en) 2014-09-28 2014-09-28 High-efficiency back contact solar cell back sheet without main grids, high-efficiency back contact solar cell assembly without main grids and manufacturing technology

Country Status (1)

Country Link
CN (1) CN104269454B (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105845754A (en) * 2016-04-14 2016-08-10 泰州中来光电科技有限公司 Solar energy cell module, preparing method, assembly and system for the cell module
CN106502040B (en) * 2016-11-18 2019-06-04 中国电子科技集团公司第四十一研究所 Lithography mask version for chemical milling process production gold plated copper strip micro-force sensing line
CN111725335A (en) * 2019-03-18 2020-09-29 福建金石能源有限公司 HBC high-efficiency solar cell back electrode connection and packaging integrated structure
CN114361266B (en) * 2020-09-28 2024-03-22 苏州阿特斯阳光电力科技有限公司 Photovoltaic module
CN117832301B (en) * 2024-03-05 2024-06-14 金阳(泉州)新能源科技有限公司 Back contact battery string, manufacturing method thereof and photovoltaic module

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102437216A (en) * 2011-09-19 2012-05-02 友达光电股份有限公司 Solar module
CN103329285A (en) * 2011-02-16 2013-09-25 三菱电机株式会社 Solar cell, solar cell module and method of joining lead wire of solar cell
CN103890968A (en) * 2011-10-31 2014-06-25 E.I.内穆尔杜邦公司 Integrated back-sheet for back contact photovoltaic module

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102010017180A1 (en) * 2010-06-01 2011-12-01 Solarworld Innovations Gmbh Solar cell, solar module, and method for wiring a solar cell, and contact wire
CN104064608B (en) * 2014-05-28 2016-08-24 晶澳(扬州)太阳能科技有限公司 A kind of without main grid back contact solar cell assembly and preparation method thereof

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103329285A (en) * 2011-02-16 2013-09-25 三菱电机株式会社 Solar cell, solar cell module and method of joining lead wire of solar cell
CN102437216A (en) * 2011-09-19 2012-05-02 友达光电股份有限公司 Solar module
CN103890968A (en) * 2011-10-31 2014-06-25 E.I.内穆尔杜邦公司 Integrated back-sheet for back contact photovoltaic module

Also Published As

Publication number Publication date
CN104269454A (en) 2015-01-07

Similar Documents

Publication Publication Date Title
CN104282788B (en) Main-grid-free high-efficiency back contact solar cell module, main-grid-free high-efficiency back contact solar cell assembly and manufacturing technology of main-grid-free high-efficiency back contact solar cell assembly
CN104576778B (en) Without main grid high efficiency back contact solar cell, component and its preparation technology
CN104810423B (en) New no main grid high efficiency back contact solar cell and component and preparation technology
CN104253169B (en) Without main grid, high efficiency back contact solar cell module, assembly and preparation technology
CN104269462B (en) Back contact solar cell back sheet without main grids, back contact solar cell assembly without main grids and manufacturing technology
CN104269453B (en) Without main grid, high-level efficiency back contact solar cell backboard, assembly and preparation technology
CN204348742U (en) Without main grid high efficiency back contact solar cell and assembly thereof
CN104269454B (en) High-efficiency back contact solar cell back sheet without main grids, high-efficiency back contact solar cell assembly without main grids and manufacturing technology
CN215815896U (en) Solar cell module
CN204651328U (en) Novel without main grid high efficiency back contact solar cell and assembly thereof
CN204204882U (en) Without main grid high efficiency back contact solar cell assembly
CN204204885U (en) Without main grid high efficiency back contact solar cell backboard
CN204230264U (en) Without main grid high efficiency back contact solar cell backboard and assembly
CN104319301A (en) Main gate-free, high-efficiency and back-contact solar battery backplane, assembly and preparation process
CN104347746A (en) Main-grid-free high-efficiency back contact solar battery module, main-grid-free high-efficiency back contact solar battery assembly and preparation process
CN204088340U (en) Without main grid high efficiency back contact solar cell backboard
CN204088345U (en) Without main grid high efficiency back contact solar cell module and assembly
CN204088344U (en) Without main grid high efficiency back contact solar cell module and assembly
CN204144285U (en) Without main grid high efficiency back contact solar cell module and assembly
CN204088342U (en) Without main grid high efficiency back contact solar cell assembly
CN110429153A (en) A kind of stacked wafer moudle interconnection architecture and preparation method thereof
CN204088341U (en) Without main grid high efficiency back contact solar cell backboard and assembly
CN104347737B (en) Without main grid, high efficiency back contact solar cell module, assembly and preparation technology
CN110660880B (en) Back contact solar cell module production method and back contact solar cell module
CN204144274U (en) Without main grid high efficiency back contact solar cell module and assembly

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant