CN106094269B - A kind of etching device - Google Patents
A kind of etching device Download PDFInfo
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- CN106094269B CN106094269B CN201610446172.0A CN201610446172A CN106094269B CN 106094269 B CN106094269 B CN 106094269B CN 201610446172 A CN201610446172 A CN 201610446172A CN 106094269 B CN106094269 B CN 106094269B
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- 238000005530 etching Methods 0.000 title claims abstract description 34
- 230000001154 acute effect Effects 0.000 claims abstract description 11
- 239000004973 liquid crystal related substance Substances 0.000 abstract description 3
- 238000005299 abrasion Methods 0.000 description 15
- 238000010586 diagram Methods 0.000 description 12
- 238000001312 dry etching Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000005611 electricity Effects 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 238000005452 bending Methods 0.000 description 1
- 239000000112 cooling gas Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/1303—Apparatus specially adapted to the manufacture of LCDs
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- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The present invention relates to technical field of liquid crystal display, a kind of etching device is disclosed, for being performed etching to part to be etched, including lower electrode and thimble, lower electrode includes electrode body, it further include multiple first bump structures and multiple second bump structures for being formed in electrode body support surface, first bump structure and the second bump structure are staggered, along perpendicular on the direction of electrode body support surface, the height of first bump structure is greater than the height of the second bump structure, when thimble jacks up the part to be etched being placed on lower electrode, the direction for the frictional force that first bump structure provides part to be etched deviates from the center of electrode body, and it is at an acute angle between the support surface of electrode body, the wearability of the lower electrode of the etching device is stronger, it is longer using the time, product yield is high.
Description
Technical field
The present invention relates to technical field of liquid crystal display more particularly to a kind of etching devices.
Background technique
In technical field of liquid crystal display, the bump structure of dry etching device middle and lower part electrode surface is mainly used for etching
Part to be etched is supported in the process, and the bump structure on general lower electrode surface is as shown in Figure 1 and Figure 2, cylindrical type in Fig. 1
Bump structure is larger compared to the contact area of the bump structure and part to be etched of cabochon in Fig. 2, is also easy to produce stamp nurse and draws not
Good, in Fig. 2, part 01 to be etched is placed on the bump structure 03 on 02 surface of dry etching machine lower electrode, lower electrode 02
The channel for guaranteeing the circulation of the part back side to be etched cooling gas is formed between the surface that is oppositely arranged of part 01 to be etched.
Currently, this general bump structure is although relatively easy, but it is easy to produce various bad such as common print
Flower nurse draws bad, static discharge, part to be etched rupture etc., seriously affects product yield.When thimble 03, which is in, rises station, such as
Shown in Fig. 3, the bending of part 01 to be etched causes edge bump structure 04 to wear, and causes stamp nurse to draw bad, as shown in figure 4, convex
The curved surfaces of point structure 04 are smoothed, it is easier to and it generates stamp nurse and part 01 bad and to be etched is drawn to rupture, and it is more serious
Abrasion causes static discharge and part to be etched 01 to rupture as shown in figure 5, entire bump structure 04 is smoothed.Therefore, one is designed
The wear-resisting lower electrode of kind is just particularly important.
Summary of the invention
The present invention provides a kind of etching device, and the wearability of the lower electrode of the etching device is stronger, longer using the time,
Improve product yield.
In order to achieve the above objectives, the present invention the following technical schemes are provided:
A kind of etching device, for being performed etching to part to be etched, including lower electrode and thimble, the lower electrode
It further include multiple first bump structures and multiple second salient points for being formed in the electrode body support surface including electrode body
Structure, first bump structure and second bump structure are staggered, along perpendicular to the electrode body support surface
Direction on, the height of first bump structure is greater than the height of second bump structure, when thimble will be placed in it is described
When part to be etched on lower electrode jacks up, first bump structure deviates from institute to the direction for the frictional force that part to be etched provides
State the center of electrode body and at an acute angle between the support surface of the electrode body.
In above-mentioned etching device, since the height of the first bump structure is greater than the height of the second bump structure, and first
Bump structure and the second bump structure are staggered, and the top of the first bump structure and the second bump structure, which cooperatively forms, to be concaved towards
The part supporting surface to be etched of electrode body, when thimble jacks up the part to be etched being placed on lower electrode, the first salient point knot
Structure provides part to be etched the center for deviating from electrode body and frictional force at an acute angle between the support surface of electrode body,
Compared with the frictional force that part to be etched in background technique is subject to, the frictional force that the first bump structure provides part to be etched is larger,
So that the part to be etched distance reduction mobile to center during thimble jacks up part to be etched, to reduce to salient point mechanism
Abrasion.
And since the height of the first bump structure is greater than the height of the second bump structure, so that the first bump structure is prior to the
Two bump structures abrasion, when the first bump structure is worn down to it is consistent with the second bump structure structure when, the first bump structure and
Second bump structure supports part to be etched simultaneously, and thus, the wearability of the lower electrode of above-mentioned dry etching machine is stronger, when use
Between it is longer, product yield is high.
Preferably, first bump structure is cylindrical type salient point or cabochon salient point, and second bump structure is
Cylindrical type salient point or cabochon salient point.
Preferably, first bump structure is cabochon salient point, the extending direction and the electricity of the cabochon salient point
It is arranged between the body support surface of pole at set angle, the opening direction of the set angle deviates from the electrode body supporting surface
Central area, and less than 90 °.
Preferably, the set angle is more than or equal to 45 °.
Preferably, the range of the set angle is 60 °~80 °.
A kind of etching device, for being performed etching to part to be etched, including lower electrode and thimble, the lower electrode
It further include multiple first bump structures and multiple second salient points for being formed in the electrode body support surface including electrode body
Structure, multiple first bump structures are to be etched to be used to support along the fringe region setting of the electrode body support surface
The fringe region of part, second bump structure intermediate region of the electrode body support surface is set be used to support to
Etch the intermediate region of part；The length of first bump structure is greater than the length of the second bump structure, each described first
At set angle, the opening direction of the set angle between the length direction of bump structure and the electrode body support surface
Away from the central area of the electrode body support surface, and less than 90 °；Along the side perpendicular to the electrode body support surface
To the height of first bump structure is equal to the height of second bump structure, when thimble will be placed in the lower part electricity
When part to be etched on extremely jacks up, the first bump structure friction mechanism deviates from the direction for the frictional force that part to be etched provides
The center of the electrode body and at an acute angle between the support surface of the electrode body.
In above-mentioned etching device, the first bump structure is arranged in the fringe region of electrode body support surface, and first is convex
At set angle between the length direction and electrode body support surface of point structure, the opening direction of set angle deviates from electrode sheet
The central area of body support surface, and less than 90 °, when thimble jacks up the part to be etched being placed on lower electrode, first
The direction for the frictional force that bump structure provides part to be etched deviates from the center of electrode body and the support surface with electrode body
Between it is at an acute angle so that frictional force increases, so that part to be etched is moved to center during part to be etched is jacked up by thimble
Distance reduces, to reduce the abrasion to salient point mechanism.
And since the first bump structure is worn prior to the second bump structure, and first wear the rake of the first bump structure
Point, when the first bump structure is worn down to it is consistent with the second bump structure structure when, the first bump structure and the second bump structure
Part to be etched is supported simultaneously, thus, the wearability of the lower electrode of above-mentioned dry etching machine is stronger, product longer using the time
Yield is high.
Preferably, first bump structure is cabochon salient point.
Preferably, the set angle is more than or equal to 45 °.
Preferably, the range of the set angle is 60 °~80 °.
Detailed description of the invention
Fig. 1 is a kind of structural schematic diagram of the bump structure for lower electrode that background of invention provides；
Fig. 2 is a kind of another structural schematic diagram of the bump structure for lower electrode that background of invention provides；
Fig. 3 is status diagram of the lower electrode provided by Fig. 2 when thimble rises；
Fig. 4 is the status diagram after the abrasion of bump structure provided by Fig. 2；
Fig. 5 is another status diagram after the abrasion of bump structure provided by Fig. 2；
Fig. 6 is a kind of partial structural diagram of lower electrode provided by the invention；
Fig. 7 is a kind of structural schematic diagram of etching device provided by the invention；
Fig. 8 is a kind of another structural schematic diagram of lower electrode provided by the invention；
Fig. 9 is a kind of another structural schematic diagram of lower electrode provided by the invention；
Figure 10 is a kind of another structural schematic diagram of lower electrode provided by the invention；
Figure 11 is a kind of another structural schematic diagram of lower electrode provided by the invention；
Figure 12 is a kind of another structural schematic diagram of lower electrode provided by the invention.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
As shown in Fig. 6 and Fig. 7, a kind of etching device, for being performed etching to part to be etched, including lower electrode and
Thimble, lower electrode include electrode body 1, further include multiple first bump structure, 2 Hes for being formed in electrode body support surface
Multiple second bump structures 3, the first bump structure 2 and the second bump structure 3 are staggered, and support table along perpendicular to electrode body
On the direction in face, the height of the first bump structure 2 is greater than the height of the second bump structure 3, when thimble will be placed in lower electrode
On part to be etched when jacking up, the direction for the frictional force that the first bump structure 2 provides part to be etched deviates from electrode body 1
The heart and at an acute angle between the support surface of electrode body 1.
In above-mentioned etching device, since the height of the first bump structure 2 is greater than the height of the second bump structure 3, and the
One bump structure 2 and the second bump structure 3 are staggered, and the top of the first bump structure 2 and the second bump structure 3 cooperates shape
At the part supporting surface 4 to be etched for concaving towards electrode body 1, when thimble jacks up the part to be etched being placed on lower electrode, the
One bump structure 2 provides the center away from electrode body 1 and between the support surface of electrode body 1 in sharp to part to be etched
The frictional force at angle, compared with the frictional force that part to be etched in background technique is subject to, the first bump structure 2 provides part to be etched
Frictional force is larger, so that the part to be etched distance reduction mobile to center during thimble jacks up part to be etched, to subtract
Few abrasion to salient point mechanism.
And since the height of the first bump structure 2 is greater than the height of the second bump structure 3, so that the first bump structure 2 is first
It is worn in the second bump structure 3, when the first bump structure 2 is worn down to consistent with 3 structure of the second bump structure, the first salient point
Structure 2 and the second bump structure 3 support part to be etched simultaneously, thus, the wearability of the lower electrode of above-mentioned dry etching machine compared with
By force, longer using the time, product yield is high.
In a kind of preferred embodiment, the first bump structure 2 is cylindrical type salient point or cabochon salient point, the second salient point knot
Structure 3 is cylindrical type salient point or cabochon salient point, and cabochon salient point and part to be etched are point contacts, and friction is small, can subtract
It waits a little while,please the abrasion for etching part to cabochon salient point, and uses the lesser cylindrical type salient point of body diameter, can guarantee part to be etched
It rests easily on lower electrode.
First bump structure 2 and the second bump structure 3, which have, is preferable to provide mode as follows:
Mode one, as shown in fig. 6, the first bump structure 2 is cylindrical type salient point, the second bump structure 3 is cabochon salient point；
Mode two, as shown in figure 8, the first bump structure 2 is cylindrical type salient point, the second bump structure 3 is cylindrical type salient point；
Mode three, as shown in Figure 10, the first bump structure 2 are cabochon salient point, and the second bump structure 3 is that cabochon is convex
Point；
Mode two, as shown in figure 9, the first bump structure 2 is cabochon salient point, the second bump structure 3 is cylindrical type salient point.
In mode one, due to the first bump structure 2 height be greater than the second bump structure 3 height, adjacent first
The top of bump structure 2 and the top of the second bump structure 3 cooperatively form the part supporting surface 4 to be etched for concaving towards electrode body 1,
It is point contact between part to be etched and the first bump structure 2 and the second bump structure 3 on part supporting surface 4 to be etched,
Friction is small, and part to be etched is smaller to the abrasion of the first bump structure 2 and the second bump structure 3.
In mode two, due to the first bump structure 2 height be greater than the second bump structure 3 height, adjacent first
The top planes of the top of bump structure 2 and the second bump structure 3 cooperatively form the part to be etched support for concaving towards electrode body 1
Face 4 is point contact between the part to be etched and the first bump structure 2 on part supporting surface 4 to be etched, and friction is small, to
It is smaller to the abrasion of the first bump structure 2 to etch part, part to be etched and the second bump structure on part supporting surface 4 to be etched
It is face contact between 3, can guarantees that part to be etched rests easily on lower electrode.
In mode three, due to the first bump structure 2 height be greater than the second bump structure 3 height, adjacent first
The top of bump structure 2 and the top of the second bump structure 3 cooperatively form the part supporting surface 4 to be etched for concaving towards electrode body 1,
It is point contact between part and cabochon salient point to be etched on part supporting surface 4 to be etched, friction is small, part pair to be etched
The abrasion of cabochon salient point is smaller.
In mode three, due to the first bump structure 2 height be greater than the second bump structure 3 height, adjacent first
The top planes of the top of bump structure 2 and the second bump structure 3 cooperatively form the part to be etched support for concaving towards electrode body 1
Face 4, the first bump structure 2 are cabochon salient point, and part to be etched is smaller to the abrasion of the first bump structure 2, are located at part to be etched
It is face contact between part to be etched and the second bump structure 3 on supporting surface 4, can guarantees that part to be etched rests easily within down
On portion's electrode.
In a kind of preferred embodiment, as shown in figure 11, the first bump structure 2 is cabochon salient point, cabochon salient point
It is arranged between extending direction and electrode body support surface at set angle, the opening direction of set angle deviates from electrode body branch
The central area in support face, and less than 90 °.The top of the first adjacent bump structure 2 and the top planes of the second bump structure 3
Cooperatively form the part supporting surface 4 to be etched for concaving towards electrode body 1, the first bump structure 2 is cabochon salient point, and part to be etched is to the
The abrasion of one bump structure 2 is smaller, when the first bump structure 2 is worn up to it is consistent with the height of the second bump structure 3 when, on thimble top
During playing part to be etched, the first bump structure 2 provides in electrode body 1 part to be etched contacted therewith
The heart and frictional force at an acute angle between the support surface of electrode body 1 so that frictional force increase so that thimble will be to be etched
The distance reduction that part to be etched is mobile to center during part jacks up is lost, to reduce the abrasion to salient point mechanism.And due to
The height of one bump structure 2 is greater than the height of the second bump structure 3, so that the first bump structure 2 is ground prior to the second bump structure 3
Damage, and the sloping portion of the first bump structure 2 is first worn, when the first bump structure 2 is worn down to and 3 structure of the second bump structure
When consistent, the first bump structure 2 and the second bump structure 3 support part to be etched simultaneously.
Specifically, set angle is more than or equal to 45 °.According to practical feelings such as the size of lower electrode and part to be etched, thickness
Condition selects set angle, wherein set angle may be selected 45 °, 50 °, 55 °, 60 °, 65 °, 70 °, 75 °, 80 °, 85 °.
Specifically, the range of set angle is 60 °~80 °, preferable 60 °, 65 °, 70 °, 75 °, 80 ° of set angle.
As shown in figure 12, a kind of etching device, for being performed etching to part to be etched, including lower electrode and thimble,
Lower electrode includes electrode body 1, further includes multiple first bump structures 2 and multiple for being formed in electrode body support surface
Two bump structures 3, multiple first bump structures 2 are to be etched to be used to support along the fringe region setting of electrode body support surface
The intermediate region of electrode body support surface is arranged in be used to support part to be etched in the fringe region of part, the second bump structure 3
Intermediate region；The length of first bump structure 2 is greater than the length of the second bump structure 3, the length of each the first bump structure 2
It spends at set angle between direction and electrode body support surface, the opening direction of set angle deviates from electrode body support surface
Central area, and less than 90 °；Along the direction perpendicular to electrode body support surface, the height of the first bump structure 2 is equal to the
The height of two bump structures 3, when thimble jacks up the part to be etched being placed on lower electrode, first bump structure rubs
The direction for the frictional force that wiping mechanism provides part to be etched deviates from the center of electrode body 1 and the support surface with electrode body 1
Between it is at an acute angle.
In above-mentioned etching device, the first bump structure 2 is arranged in the fringe region of electrode body support surface, and first is convex
At set angle between the length direction and electrode body support surface of point structure 2, the opening direction of set angle deviates from electrode
The central area of body support surface, and less than 90 °, when thimble jacks up the part to be etched being placed on lower electrode, the
The direction for the frictional force that one bump structure 2 provides part to be etched away from electrode body center and with the support of electrode body
It is at an acute angle between surface, so that frictional force increases, so that part to be etched is to center shifting during part to be etched is jacked up by thimble
Dynamic distance reduces, to reduce the abrasion to salient point mechanism.
And since the first bump structure 2 is worn prior to the second bump structure 3, and first wear the inclination of the first bump structure 2
Part, when the first bump structure 2 is worn down to consistent with 3 structure of the second bump structure, the first bump structure 2 and the second salient point
Structure 3 supports part to be etched simultaneously, thus, the wearability of the lower electrode of above-mentioned dry etching machine is stronger, and it is longer using the time,
Product yield is high.
As shown in figure 12, in a kind of preferred embodiment, the first bump structure 2 is cabochon salient point, the second bump structure 3
For cabochon salient point, when thimble jacks up the part to be etched being placed on lower electrode, the first bump structure 2 is convex prior to second
Point structure 3 is worn, and first wears the sloping portion of the first bump structure 2, when the first bump structure 2 is worn down to and the second salient point
When 3 structure of structure is consistent, the first bump structure 2 and the second bump structure 3 support part to be etched simultaneously, thus, above-mentioned dry method is carved
The wearability of the lower electrode of erosion machine is stronger, longer using the time, and product yield is high.
In a kind of preferred embodiment, set angle is more than or equal to 45 °.According to the size of lower electrode and part to be etched,
The actual conditions such as thickness select set angle, wherein set angle may be selected 45 °, 50 °, 55 °, 60 °, 65 °, 70 °, 75 °,
80°、85°。
Specifically, the range of set angle is 60 °~80 °, preferable 60 °, 65 °, 70 °, 75 °, 80 ° of set angle.
Obviously, those skilled in the art can carry out various modification and variations without departing from this hair to the embodiment of the present invention
Bright spirit and scope.In this way, if these modifications and changes of the present invention belongs to the claims in the present invention and its equivalent technologies
Within the scope of, then the present invention is also intended to include these modifications and variations.
Claims (9)
1. a kind of etching device, for being performed etching to part to be etched, including lower electrode and thimble, the lower electrode packet
Include electrode body, which is characterized in that further include being formed in multiple first bump structures of the electrode body support surface and more
A second bump structure, first bump structure and second bump structure are staggered, along perpendicular to the electrode sheet
On the direction of body support surface, the height of first bump structure is greater than the height of second bump structure, when thimble will
When being placed in part to be etched on the lower electrode and jacking up, frictional force that first bump structure provides part to be etched
Direction is away from the center of the electrode body and at an acute angle between the support surface of the electrode body.
2. etching device according to claim 1, which is characterized in that first bump structure be cylindrical type salient point or
Cabochon salient point, second bump structure are cylindrical type salient point or cabochon salient point.
3. etching device according to claim 1, which is characterized in that first bump structure is cabochon salient point, institute
It states between the extending direction of cabochon salient point and the electrode body support surface into set angle, the opening of the set angle
Direction deviates from the central area of the electrode body support surface, and less than 90 °.
4. etching device according to claim 3, which is characterized in that the set angle is more than or equal to 45 °.
5. etching device according to claim 4, which is characterized in that the range of the set angle is 60 °~80 °.
6. a kind of etching device, for being performed etching to part to be etched, including lower electrode and thimble, the lower electrode packet
Include electrode body, which is characterized in that further include being formed in multiple first bump structures of the electrode body support surface and more
A second bump structure, multiple first bump structures are arranged along the fringe region of the electrode body support surface to be used for
Support the fringe region of part to be etched, second bump structure be arranged in the intermediate region of the electrode body support surface with
It is used to support the intermediate region of part to be etched；The length of first bump structure is greater than the length of the second bump structure, each
At set angle, the set angle between the length direction and the electrode body support surface of a first bump structure
Opening direction deviate from the central area of the electrode body support surface, and less than 90 °；Along perpendicular to the electrode body branch
The direction on surface is supportted, the height of first bump structure is equal to the height of second bump structure, when thimble will be placed in
When part to be etched on the lower electrode jacks up, frictional force that the first bump structure friction mechanism provides part to be etched
Direction away from the center of the electrode body and at an acute angle between the support surface of the electrode body.
7. etching device according to claim 6, which is characterized in that first bump structure is cabochon salient point.
8. etching device according to claim 6, which is characterized in that the set angle is more than or equal to 45 °.
9. etching device according to claim 8, which is characterized in that the range of the set angle is 60 °~80 °.
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| CN113917720B (en) * | 2021-10-20 | 2022-07-05 | 苏州众芯联电子材料有限公司 | Method for manufacturing lower electrode with compact floating point surface structure |
| CN114038336B (en) * | 2021-12-06 | 2023-02-07 | 武汉华星光电半导体显示技术有限公司 | Profiling device, manufacturing method of display panel and display panel |
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| CN104332380A (en) * | 2014-09-02 | 2015-02-04 | 合肥京东方光电科技有限公司 | Electrode used for dry etching device and preparation method thereof, and dry etching device |
| CN105080803A (en) * | 2015-08-21 | 2015-11-25 | 京东方科技集团股份有限公司 | Base plate bearing structure, pressure reduction drying device and pressure reduction drying method |
| CN105304446A (en) * | 2015-09-18 | 2016-02-03 | 京东方科技集团股份有限公司 | Lower electrode base platform of dry etching device and dry etching device |
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| CN106094269A (en) | 2016-11-09 |
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