CN204315621U

CN204315621U - A kind of LED flip chip

Info

Publication number: CN204315621U
Application number: CN201420853701.5U
Authority: CN
Inventors: 熊毅; 曾荣昌; 杜金晟; 王跃飞; 李坤锥
Original assignee: Guangzhou Hongli Tronic Co Ltd
Current assignee: Hongli Zhihui Group Co Ltd
Priority date: 2014-12-30
Filing date: 2014-12-30
Publication date: 2015-05-06
Anticipated expiration: 2024-12-30

Abstract

The utility model discloses a kind of LED flip chip, comprise equal and opposite in direction and the electrode of symmetry, be provided with insulating barrier between electrodes; The position that insulating barrier place is corresponding with thimble jacking is provided with metal level.This structure, in the same size and be arranged symmetrically with the flip LED wafer of electrode, when utilizing thimble jacking flip LED wafer, can reduce the probability that flip LED wafer is hindered on thimble top.

Description

A kind of LED flip chip

Technical field

The utility model relates to LED flip chip.

Background technology

LED wafer is the core in LED component, and its major function converts electrical energy into luminous energy, and the main material of LED wafer is monocrystalline silicon.

LED wafer in use generally needs through jacking, adsorption process, and the process of jacking generally to be acted directly in LED wafer and the realization that moves upward by thimble, adsorbs and is realized by sucker.At present, the thimble realizing LED wafer jacking mainly contains glue thimble and steel thimble, and find in actual production process, glue thimble is applied in LED wafer, do not allow rapid wear top to hinder LED wafer, but the life-span of glue thimble is short, therefore, seldom uses glue thimble; And adopt steel thimble, although the long service life of steel thimble, the hardness of invar thimble is large, when its be applied directly to LED wafer non-electrode on, be then easy to top and hinder LED wafer.

Traditional LED wafer is mainly formal dress wafer, as at application number be 201320575791.1 patent documentation in disclose a kind of LED chip, comprise sapphire substrate, epitaxial loayer and Ohmic electrode, described Ohmic electrode comprises P electrode and N electrode, for forward LED wafer, although sapphire substrate is very crisp, but the thickness of sapphire substrate is larger, be generally 130-150 μm, therefore, even steel thimble acts directly on sapphire substrate, be also not easy top and hinder LED wafer, be not easy the phenomenon occurring electric leakage, short circuit and deadlock.

Along with the development of LED wafer, increasing local employing flip chip now.As shown in Figure 1, two electrode 100 sizes of initial flip chip do not wait, electrode is generally metal level, in order to the top lift that thimble can be allowed to act in LED wafer is balanced, thimble general action is at the middle part of LED wafer, for this LED wafer, due to electrode size not etc., therefore, thimble can act on large electrode, instead of other parts of LED wafer, therefore, LED wafer is not easy to be pushed up wound, but, due to differing in size of two electrodes, in die bond process, likely occur that large electrode has contacted with tin cream but the phenomenon that also do not contact with tin cream of small electrode, the uneven situation about offseting with LED wafer die bond of easy generation die bond, in addition, for the LED wafer that electrode size differs, be difficult to the consumption controlling tin cream, therefore, as shown in Figure 2, current flip LED wafer has been developed into the identical and symmetrical structure of two electrode 100 sizes, and plates at middle GAP layer the silicon dioxide layer 200 that a layer thickness is about 1.5 μm, plays the effect of positive and negative insulation and structural defence, but, and make thimble balanced to the top lift of LED wafer, silicon dioxide layer then becomes the position of thimble effect, and silicon dioxide is flimsy, when thimble is applied on silicon dioxide layer, thimble is easy to puncture silicon dioxide layer, causes the electric leakage of flip LED wafer, short circuit, even crashes, even if there are not the problems referred to above, LED wafer also can be made to there is potential safety hazard.

Summary of the invention

For in the same size and be arranged symmetrically with the flip LED wafer of electrode, when utilizing thimble jacking flip LED wafer, hinder the probability of flip LED wafer for reducing thimble top, the utility model provides a kind of LED flip chip.

For achieving the above object, a kind of LED flip chip, comprises equal and opposite in direction and the electrode of symmetry, is provided with insulating barrier between electrodes; The position that insulating barrier place is corresponding with thimble jacking is provided with metal level.Described metal level can be shaping with electrode plating, and other parts between electrode except metal level are still insulating barrier.This structure, thimble acts on the metal level of good toughness in die bond process, instead of original insulating barrier, therefore, when requiring top lift equilibrium, can well prevent thimble top to hinder flip LED wafer, prevents the phenomenon of electric leakage, short circuit and deadlock.

Further, the thickness of metal level is 3-5 μm.Adopt thicker metal level, can better prevent thimble from puncturing metal level.

Further metal level is circular, and metal level is positioned at the centre position of LED flip chip; Corresponding to the position of metal level, insulating barrier extends to form arc-shaped to electrode direction; The insulating barrier of this structure in original space between the broadening metal level of energy and electrode, reaches the object improving insulation property.

Further, described insulating barrier is silicon dioxide insulating layer.

Accompanying drawing explanation

Fig. 1 is the schematic diagram of traditional LED flip chip.

Fig. 2 is the schematic diagram of LED flip chip in prior art.

Fig. 3 is the schematic diagram of the utility model LED flip chip.

Fig. 4 is A-A cutaway view in Fig. 3.

Embodiment

Below in conjunction with the drawings and specific embodiments, the utility model is further elaborated.

As shown in Figure 3 and Figure 4, LED flip chip comprises Sapphire Substrate 1, N layer 2, P layer 3, N pole articulamentum 4, electrode 5, silicon dioxide insulating layer 6.N layer 2 is located at the back side of Sapphire Substrate 1, P layer 3 is located at the back side of N layer 2, N pole articulamentum 4 is connected on N layer 2, wherein an electrode and N pole articulamentum 4 are electrically connected, another electrode and P layer are electrically connected, between electrode and N layer 2, P layer 3, N pole articulamentum 4, establish described silicon dioxide insulating layer 6.

As shown in Figure 3, the equal and opposite in direction of electrode 5, and be arranged symmetrically with.Between two electrodes 5, be provided with insulating barrier 8, insulating barrier 8 is silicon dioxide insulating layer.The position that insulating barrier 8 place is corresponding with thimble jacking is provided with metal level 7, and the thickness of metal level 7 is 3-5 μm, and metal level 7 is circular, and metal level is positioned at the centre position of LED flip chip; Corresponding to the position of metal level, insulating barrier extends to form arc-shaped to electrode direction, and like this, the insulating barrier in original space between the broadening metal level of energy and electrode, reaches the object improving insulation property.

Structure of the present utility model, thimble acts on the large metal level of good toughness thickness 7 in die bond process, instead of original insulating barrier, therefore, when requiring top lift equilibrium, thimble top well can be prevented to hinder flip LED wafer, preventing the phenomenon of electric leakage, short circuit and deadlock.

Claims

1. a LED flip chip, comprises equal and opposite in direction and the electrode of symmetry, is provided with insulating barrier between electrodes; It is characterized in that: on the position that insulating barrier place is corresponding with thimble jacking, be provided with metal level.

2. LED flip chip according to claim 1, is characterized in that: the thickness of metal level is 3-5 μm.

3. LED flip chip according to claim 1, is characterized in that: metal level is for circular, and metal level is positioned at the centre position of LED flip chip; Corresponding to the position of metal level, insulating barrier extends to form arc-shaped to electrode direction.

4. LED flip chip according to claim 1, is characterized in that: described insulating barrier is silicon dioxide insulating layer.