CN105957924A - Method for preparing preferred orientation ITO photoelectric thin film by ZnO buffer layer - Google Patents
Method for preparing preferred orientation ITO photoelectric thin film by ZnO buffer layer Download PDFInfo
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- CN105957924A CN105957924A CN201610490384.9A CN201610490384A CN105957924A CN 105957924 A CN105957924 A CN 105957924A CN 201610490384 A CN201610490384 A CN 201610490384A CN 105957924 A CN105957924 A CN 105957924A
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- 238000000034 method Methods 0.000 title claims abstract description 33
- 239000010409 thin film Substances 0.000 title claims abstract description 30
- 239000010408 film Substances 0.000 claims abstract description 41
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 14
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 60
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 30
- 229910052786 argon Inorganic materials 0.000 claims description 30
- 239000011521 glass Substances 0.000 claims description 14
- 238000004544 sputter deposition Methods 0.000 claims description 14
- 238000002360 preparation method Methods 0.000 claims description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 10
- 239000007789 gas Substances 0.000 claims description 10
- 239000001301 oxygen Substances 0.000 claims description 10
- 229910052760 oxygen Inorganic materials 0.000 claims description 10
- 239000013077 target material Substances 0.000 claims description 10
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 10
- 230000005693 optoelectronics Effects 0.000 claims description 9
- 238000004062 sedimentation Methods 0.000 claims description 8
- 238000005520 cutting process Methods 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 239000012300 argon atmosphere Substances 0.000 claims description 5
- 239000012535 impurity Substances 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- 230000003647 oxidation Effects 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 claims 1
- 238000004140 cleaning Methods 0.000 abstract description 4
- 238000005516 engineering process Methods 0.000 abstract description 4
- 239000000463 material Substances 0.000 abstract description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 238000001228 spectrum Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000002233 thin-film X-ray diffraction Methods 0.000 description 2
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 1
- -1 CIGS Chemical compound 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- BERDEBHAJNAUOM-UHFFFAOYSA-N copper(I) oxide Inorganic materials [Cu]O[Cu] BERDEBHAJNAUOM-UHFFFAOYSA-N 0.000 description 1
- LBJNMUFDOHXDFG-UHFFFAOYSA-N copper;hydrate Chemical compound O.[Cu].[Cu] LBJNMUFDOHXDFG-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Electromagnetism (AREA)
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Abstract
The invention discloses a method for preparing a preferred orientation ITO photoelectric thin film by a ZnO buffer layer. The method comprises the steps of cleaning a substrate; preparing a ZnO buffer thin film; and preparing a preferred orientation ITO thin film with a grain structure (222). The ITO transparent conductive thin film prepared by a magnetron sputtering technology is adopted as a single-phase polycrystalline structure and manly comprises grain structures of (211), (222), (400), (440), (622) and the like. The preferred orientation ITO transparent conductive film with the grain structure (222) can be prepared by adding a layer of ZnO buffer layer material, so that the photoelectric property of the ITO transparent conductive thin film is improved.
Description
Technical field
The present invention relates to a kind of method utilizing ZnO buffer to prepare preferred orientation ITO optoelectronic film, belong to solaode neck
Territory.
Background technology
Solaode is a kind of photovoltaic device being transformed into electric energy based on semiconductor pn junction absorption sunlight, its sunlight absorbed layer
Material mainly includes crystalline silicon and compound film such as cadmium telluride, CIGS, Red copper oxide etc..
In crystal silicon solar batteries and film solar battery structure, transparent conductive oxide film all plays an important role, and one
Being to collect photo-generated carrier as electrode, two is to make sunlight pass through this layer as photic zone to arrive absorbed layer.Except above-mentioned use
On the way, transparent conductive oxide film is also used as infrared reflective material；Transparent conductive oxide film is also at light emitting diode
(LED) it is widely used on.Common transparent conductive oxide film includes ITO, AZO and FTO, wherein the light of ITO
Electrical property is best, and the optical transmittance in Ke Jiangguang district reaches 90%.
Magnetically controlled DC sputtering technology as the method for manufacturing thin film of a kind of high speed deposition, the film sample consistency prepared is high,
Deposition velocity is fast, and film performance is stable, and technological parameter controllability is high, is suitable for industrialized production.
Summary of the invention
The technical problem to be solved is: the transparent conductive film using magnetron sputtering technique to prepare is single-phase polycrystalline
Structure, mainly includes (211) (222) (400) (440) (622) homoeocrystalline texture, and the present invention is by increasing layer of ZnO
Cushioning layer material, can prepare the transparent conductive film with (222) preferred orientation, thus improve transparent conduction
The photoelectric properties of thin film.
Technical scheme is as follows:
A kind of method utilizing ZnO buffer to prepare preferred orientation ITO optoelectronic film, comprises the steps:
Step 1: clean substrate；
Step 2: preparation ZnO buffer thin film；
Step 3: the ito thin film of preparation (222) preferred orientation.
Further, described step 1 comprises the steps:
Step 1-1: cutting quartz glass；
Step 1-2: the quartz glass of well cutting is soaked in glass cleaner；
Step 1-3: the quartz glass after glass cleaner soaks uses pure water ultrasonic cleaning；
Step 1-4: the quartz glass high pure nitrogen after pure water ultrasonic cleaning is dried up, is then placed in vacuum chamber.
Further, described step 2 comprises the steps:
Step 2-1: cavity evacuation so that background vacuum reaches 1 × 10-4Pa；
Step 2-2: 1 × 10-4Under the vacuum of Pa, quartz glass silicon, temperature is room temperature～500 DEG C；
Step 2-3: be passed through high-purity argon gas, carries out magnetron sputtering to ZnO target, to remove the oxide of target material surface；
Step 2-4: control argon flow amount scope 5～20sccm so that chamber vacuum degree maintains 0.3～10Pa；
Step 2-5: under an argon atmosphere, the ZnO target using pre-sputtering to process carries out rf magnetron sputtering on quartz glass substrate,
Deposition ZnO film.
Further, in described step 2, the technological parameter of rf magnetron sputtering is:
Target power density 0.5～5W/cm2, argon, technique vacuum 0.3～10Pa, underlayer temperature room temperature～500 DEG C, during deposition
Between 1～50min, film thickness is 5～300nm.
Further, described step 3 comprises the steps:
Step 3-1: use molecular pump that the vacuum of vacuum chamber is extracted into 1 × 10-4Pa；
Step 3-2: ZnO buffer sample will be contained and be heated to 50～200 DEG C；
Step 3-3: be passed through high-purity argon gas and oxygen mixture in vacuum chamber so that air pressure range 0.3Pa of vacuum chamber～10Pa, its
Middle argon concentration 0%～95%, oxygen concentration 5%～100%；
Step 3-4: ITO target carries out pre-sputtering, removes target material surface impurity；
Step 3-5: ITO films prepared by r. f. magnetron sputtering on the sample containing cushion ZnO.
Further, in described step 3, the technological parameter of rf magnetron sputtering is:
Target power density 0.5～3W/cm2, argon, technique vacuum 0.3～10Pa, underlayer temperature room temperature～200 DEG C, during deposition
Between 10～50min, film thickness is 100～500nm.
Beneficial effects of the present invention is as follows:
By increasing ZnO buffer, it is thus achieved that have the ito thin film of (222) preferred orientation, improve the photoelectric properties of ITO.
Accompanying drawing explanation
Fig. 1 is preferred orientation ito thin film XRD figure spectrum；
Fig. 2 is that the ito thin film XRD figure without ZnO buffer is composed；
Fig. 3 is substrate of glass (002) preferred orientation ZnO film XRD figure spectrum.
Detailed description of the invention
Below in conjunction with the accompanying drawings the present invention is described in further detail.
The present invention uses magnetron sputtering technique, first deposits layer of ZnO thin film in clean substrate of glass, by controlling glass base
End temperature is had the ZnO of (002) preferred orientation；Deposit ITO by control preparation technology the most again, i.e. can be had
(222) ito thin film of preferred orientation.Specific embodiment is as follows:
Embodiment one
The first step: substrate cleaning procedure:
1, quartz glass is cut into 2 × 2cm2Size；
2, the quartz glass of well cutting is soaked 24 hours in glass cleaner；
3, the quartz glass after glass cleaner soaks uses 15 megaohms of pure water ultrasonic cleaning 3 times；
4, the quartz glass high pure nitrogen after pure water ultrasonic cleaning is dried up, be then placed in vacuum chamber.
Second step: preparation ZnO buffer thin film:
1, cavity evacuation so that background vacuum reaches 1 × 10-4Pa；
2,1 × 10-4Under the vacuum of Pa, quartz glass silicon, temperature is room temperature；
3, it is passed through high-purity argon gas, ZnO target is carried out magnetic control pre-sputtering 5 minutes, to remove the oxide of target material surface；
4, argon flow amount scope 20sccm is controlled so that chamber vacuum degree maintains 10Pa；
5, under an argon atmosphere, the ZnO target using pre-sputtering to process carries out rf magnetron sputtering on quartz glass substrate, heavy
Long-pending ZnO film.
The technological parameter of rf magnetron sputtering is:
Target power density 0.5W/cm2, argon, technique vacuum 10Pa, underlayer temperature room temperature, sedimentation time 50min is thin
Film thickness is 300nm.
The ZnO buffer thin film with (002) preferred orientation can be prepared by above-mentioned technique.
3rd step: the ito thin film of preparation (222) preferred orientation:
1, use molecular pump that the vacuum of vacuum chamber is extracted into 1 × 10-4Pa；
2, ZnO buffer film sample will be contained and be heated to 200 DEG C；
3, high-purity argon gas and oxygen mixture it are passed through in vacuum chamber so that air pressure range 0.3Pa of vacuum chamber, wherein argon concentration
95%, oxygen concentration 5%；
4, ITO target pre-sputtering 5 minutes, remove target material surface impurity；
5, ITO films prepared by r. f. magnetron sputtering on the sample containing cushion ZnO.
The technological parameter of rf magnetron sputtering is:
Target power density 3W/cm2, argon, technique vacuum 0.3Pa, underlayer temperature 200 DEG C, sedimentation time 10min is thin
Film thickness is 100nm.
Embodiment two
The first step: substrate cleaning procedure:
1, quartz glass is cut into 2 × 2cm2Size；
2, the quartz glass of well cutting is soaked 24 hours in glass cleaner；
3, the quartz glass after glass cleaner soaks uses 15 megaohms of pure water ultrasonic cleaning 3 times；
4, the quartz glass high pure nitrogen after pure water ultrasonic cleaning is dried up, be then placed in vacuum chamber.
Second step: preparation ZnO buffer thin film:
1, cavity evacuation so that background vacuum reaches 1 × 10-4Pa；
2,1 × 10-4Under the vacuum of Pa, quartz glass silicon, temperature is 300 DEG C of room temperatures～300 DEG C；
3, it is passed through high-purity argon gas, ZnO target is carried out magnetic control pre-sputtering 5 minutes, to remove the oxide of target material surface；
4, argon flow amount scope 10sccm is controlled so that chamber vacuum degree maintains 3Pa；
5, under an argon atmosphere, the ZnO target using pre-sputtering to process carries out rf magnetron sputtering on quartz glass substrate, heavy
Long-pending ZnO film.
The technological parameter of rf magnetron sputtering is:
Target power density 3W/cm2, argon, technique vacuum 3Pa, underlayer temperature 300 DEG C, sedimentation time 20min is thin
Film thickness is 150nm.
The ZnO buffer thin film with (002) preferred orientation can be prepared by above-mentioned technique.
3rd step: the ito thin film of preparation (222) preferred orientation:
1, use molecular pump that the vacuum of vacuum chamber is extracted into 1 × 10-4Pa；
2, ZnO buffer film sample will be contained and be heated to 100 DEG C；
3, high-purity argon gas and oxygen mixture it are passed through in vacuum chamber so that air pressure range 3Pa of vacuum chamber, wherein argon concentration 50%,
Oxygen concentration 50%；
4, ITO target pre-sputtering 5 minutes, remove target material surface impurity；
5, ITO films prepared by r. f. magnetron sputtering on the sample containing cushion ZnO.
The technological parameter of rf magnetron sputtering is:
Target power density 1.5W/cm2, argon, technique vacuum 3Pa, underlayer temperature room temperature 100 DEG C, sedimentation time 30min,
Film thickness is 300nm.
Embodiment three
The first step: substrate cleaning procedure:
1, quartz glass is cut into 2 × 2cm2Size；
2, the quartz glass of well cutting is soaked 24 hours in glass cleaner；
3, the quartz glass after glass cleaner soaks uses 15 megaohms of pure water ultrasonic cleaning 3 times；
4, the quartz glass high pure nitrogen after pure water ultrasonic cleaning is dried up, be then placed in vacuum chamber.
Second step: preparation ZnO buffer thin film:
1, cavity evacuation so that background vacuum reaches 1 × 10-4Pa；
2,1 × 10-4Under the vacuum of Pa, quartz glass silicon, temperature is room temperature 500 DEG C；
3, it is passed through high-purity argon gas, ZnO target is carried out magnetic control pre-sputtering 5 minutes, to remove the oxide of target material surface；
4, argon flow amount scope 5sccm is controlled so that chamber vacuum degree maintains 0.3Pa；
5, under an argon atmosphere, the ZnO target using pre-sputtering to process carries out rf magnetron sputtering on quartz glass substrate, heavy
Long-pending ZnO film.
The technological parameter of rf magnetron sputtering is:
Target power density 5W/cm2, argon, technique vacuum 0.3Pa, underlayer temperature room temperature 500 DEG C, sedimentation time 3min,
Film thickness is 20nm.
The ZnO buffer thin film with (002) preferred orientation can be prepared by above-mentioned technique.
3rd step: the ito thin film of preparation (222) preferred orientation:
1, use molecular pump that the vacuum of vacuum chamber is extracted into 1 × 10-4Pa；
2, ZnO buffer film sample will be contained and be heated to 50 DEG C；
3, high-purity argon gas and oxygen mixture it are passed through in vacuum chamber so that air pressure range 10Pa of vacuum chamber, wherein argon concentration
0%, oxygen concentration 100%；
4, ITO target pre-sputtering 5 minutes, remove target material surface impurity；
5, ITO films prepared by r. f. magnetron sputtering on the sample containing cushion ZnO.
The technological parameter of rf magnetron sputtering is:
Target power density 0.5W/cm2, argon, technique vacuum 10Pa, underlayer temperature 50 DEG C, sedimentation time 10min is thin
Film thickness is 100nm.
It is shown to be through XRD test by the sample of above-mentioned post processing and there is the transparent conductive oxide of (222) preferred orientation
Thin film, display is in FIG.
Fig. 2 is the ito thin film without preferred orientation.
Fig. 3 is substrate of glass (002) preferred orientation ZnO film XRD figure spectrum.
The foregoing is only presently preferred embodiments of the present invention, not in order to limit the present invention.All spirit in the present invention and former
Any amendment, equivalent and the improvement etc. made within then, should be included within the scope of the present invention.
Claims (6)
1. the method utilizing ZnO buffer to prepare preferred orientation ITO optoelectronic film, comprises the steps:
Step 1: clean substrate；
Step 2: preparation ZnO buffer thin film；
Step 3: the ito thin film of preparation (222) preferred orientation.
A kind of side utilizing ZnO buffer to prepare preferred orientation ITO optoelectronic film the most according to claim 1
Method, it is characterised in that: described step 1 comprises the steps:
Step 1-1: cutting quartz glass；
Step 1-2: the quartz glass of well cutting is soaked in glass cleaner；
Step 1-3: the quartz glass after glass cleaner soaks uses pure water ultrasonic cleaning；
Step 1-4: the quartz glass high pure nitrogen after pure water ultrasonic cleaning is dried up, is then placed in vacuum chamber
In.
A kind of side utilizing ZnO buffer to prepare preferred orientation ITO optoelectronic film the most according to claim 1
Method, it is characterised in that: described step 2 comprises the steps:
Step 2-1: cavity evacuation so that background vacuum reaches 1 × 10-4Pa；
Step 2-2: 1 × 10-4Under the vacuum of Pa, quartz glass silicon, temperature is room temperature～500 DEG C；
Step 2-3: be passed through high-purity argon gas, carries out magnetron sputtering to ZnO target, to remove the oxidation of target material surface
Thing；
Step 2-4: control argon flow amount scope 5～20sccm so that chamber vacuum degree maintains 0.3～10Pa；
Step 2-5: under an argon atmosphere, the ZnO target using pre-sputtering to process is carried out on quartz glass substrate
Rf magnetron sputtering, deposits ZnO film.
A kind of side utilizing ZnO buffer to prepare preferred orientation ITO optoelectronic film the most according to claim 1
Method, it is characterised in that: in described step 2, the technological parameter of rf magnetron sputtering is:
Target power density 0.5～5W/cm2, argon, technique vacuum 0.3～10Pa, underlayer temperature room temperature
～500 DEG C, sedimentation time 1～50min, film thickness is 5～300nm.
A kind of side utilizing ZnO buffer to prepare preferred orientation ITO optoelectronic film the most according to claim 1
Method, it is characterised in that: described step 3 comprises the steps:
Step 3-1: use molecular pump that the vacuum of vacuum chamber is extracted into 1 × 10-4Pa；
Step 3-2: ZnO buffer sample will be contained and be heated to 50～200 DEG C；
Step 3-3: be passed through high-purity argon gas and oxygen mixture in vacuum chamber so that the air pressure range of vacuum chamber
0.3Pa～10Pa, wherein argon concentration 0%～95%, oxygen concentration 5%～100%；
Step 3-4: ITO target carries out pre-sputtering, removes target material surface impurity；
Step 3-5: ITO films prepared by r. f. magnetron sputtering on the sample containing cushion ZnO.
A kind of side utilizing ZnO buffer to prepare preferred orientation ITO optoelectronic film the most according to claim 1
Method, it is characterised in that: in described step 3, the technological parameter of rf magnetron sputtering is:
Target power density 0.5～3W/cm2, argon, technique vacuum 0.3～10Pa, underlayer temperature room temperature
～200 DEG C, sedimentation time 10～50min, film thickness is 100～500nm.
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| CN201610490384.9A CN105957924A (en) | 2016-06-28 | 2016-06-28 | Method for preparing preferred orientation ITO photoelectric thin film by ZnO buffer layer |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106854754A (en) * | 2016-12-16 | 2017-06-16 | 桂林电子科技大学 | A kind of preparation method of 400 main peak crystal face height preferred orientation ito thin film |
| CN111785440A (en) * | 2020-05-25 | 2020-10-16 | 先导薄膜材料（广东）有限公司 | Preparation method of ITO thin film and ITO transparent conductive glass |
| CN112831768A (en) * | 2021-01-04 | 2021-05-25 | 南京佑天金属科技有限公司 | Preparation method and application of hafnium nitride film with high crystallization quality |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102102187A (en) * | 2009-12-17 | 2011-06-22 | 中环股份有限公司 | Method for preparing transparent conductive films with crystalline structures |
| EP2599751A1 (en) * | 2010-07-29 | 2013-06-05 | Mitsubishi Materials Corporation | Indium tin oxide powder, production method therefor, transparent conductive composition, and indium tin hydroxide |
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2016
- 2016-06-28 CN CN201610490384.9A patent/CN105957924A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102102187A (en) * | 2009-12-17 | 2011-06-22 | 中环股份有限公司 | Method for preparing transparent conductive films with crystalline structures |
| EP2599751A1 (en) * | 2010-07-29 | 2013-06-05 | Mitsubishi Materials Corporation | Indium tin oxide powder, production method therefor, transparent conductive composition, and indium tin hydroxide |
Non-Patent Citations (1)
| Title |
|---|
| X.W. SUN, L.D. WANG, H.S. KWOK: "Improved ITO thin films with a thin ZnO buffer layer by sputtering", 《THIN SOLID FILMS》 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106854754A (en) * | 2016-12-16 | 2017-06-16 | 桂林电子科技大学 | A kind of preparation method of 400 main peak crystal face height preferred orientation ito thin film |
| CN111785440A (en) * | 2020-05-25 | 2020-10-16 | 先导薄膜材料（广东）有限公司 | Preparation method of ITO thin film and ITO transparent conductive glass |
| CN112831768A (en) * | 2021-01-04 | 2021-05-25 | 南京佑天金属科技有限公司 | Preparation method and application of hafnium nitride film with high crystallization quality |
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