CN104465844B - A kind of MoS2/ Si p n joint solar cell devices and preparation method thereof - Google Patents
A kind of MoS2/ Si p n joint solar cell devices and preparation method thereof Download PDFInfo
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- 229910052961 molybdenite Inorganic materials 0.000 title claims abstract description 69
- 229910052982 molybdenum disulfide Inorganic materials 0.000 title claims abstract description 69
- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 title claims abstract description 24
- 238000002360 preparation method Methods 0.000 title claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 70
- 229910052751 metal Inorganic materials 0.000 claims abstract description 54
- 239000002184 metal Substances 0.000 claims abstract description 54
- 238000000034 method Methods 0.000 claims abstract description 19
- 238000000151 deposition Methods 0.000 claims abstract description 7
- 239000010408 film Substances 0.000 claims description 25
- 238000004140 cleaning Methods 0.000 claims description 20
- 239000010409 thin film Substances 0.000 claims description 15
- 239000007789 gas Substances 0.000 claims description 14
- 238000005516 engineering process Methods 0.000 claims description 12
- 230000008569 process Effects 0.000 claims description 11
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 9
- 238000004544 sputter deposition Methods 0.000 claims description 8
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 6
- 150000002500 ions Chemical class 0.000 claims description 6
- 238000001035 drying Methods 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 4
- 239000000919 ceramic Substances 0.000 claims description 3
- 230000007797 corrosion Effects 0.000 claims description 3
- 238000005260 corrosion Methods 0.000 claims description 3
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 238000007731 hot pressing Methods 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 238000007664 blowing Methods 0.000 claims 1
- 239000007788 liquid Substances 0.000 claims 1
- 230000000149 penetrating effect Effects 0.000 claims 1
- 238000005286 illumination Methods 0.000 abstract description 11
- 238000006243 chemical reaction Methods 0.000 abstract description 5
- 238000001755 magnetron sputter deposition Methods 0.000 abstract description 2
- 238000011056 performance test Methods 0.000 abstract description 2
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 6
- 230000004044 response Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 238000001069 Raman spectroscopy Methods 0.000 description 4
- 238000011161 development Methods 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000005265 energy consumption Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- QNWMNMIVDYETIG-UHFFFAOYSA-N gallium(ii) selenide Chemical compound [Se]=[Ga] QNWMNMIVDYETIG-UHFFFAOYSA-N 0.000 description 2
- 238000009776 industrial production Methods 0.000 description 2
- 229910052976 metal sulfide Inorganic materials 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 230000001052 transient effect Effects 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 230000010748 Photoabsorption Effects 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- HVMJUDPAXRRVQO-UHFFFAOYSA-N copper indium Chemical compound [Cu].[In] HVMJUDPAXRRVQO-UHFFFAOYSA-N 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910021389 graphene Inorganic materials 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 238000011086 high cleaning Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000011244 liquid electrolyte Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 239000005543 nano-size silicon particle Substances 0.000 description 1
- 239000002120 nanofilm Substances 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- SPVXKVOXSXTJOY-UHFFFAOYSA-N selane Chemical compound [SeH2] SPVXKVOXSXTJOY-UHFFFAOYSA-N 0.000 description 1
- 229910000058 selane Inorganic materials 0.000 description 1
- 231100000004 severe toxicity Toxicity 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/074—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a heterojunction with an element of Group IV of the Periodic Table, e.g. ITO/Si, GaAs/Si or CdTe/Si solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a kind of MoS2/ Si p n joint solar cell devices and preparation method thereof, the MoS2/ Si p n joint solar cell devices include：MoS2Film layer, as the Si substrates of film layer carrier, electrode and metal In back electrodes before metal Pd.The present invention is by p-type Si substrate surface depositing n-types MoS2Film, so as to form p n knots, have developed MoS2/ Sip n joint solar cell devices.The method includes MoS2The preparation of/Si p n knots makes two parts with metal electrode；Magnetron sputtering technique is first used, MoS is deposited in p Si substrate surfaces2Film, then the making of electrode and metal In back electrodes before metal Pd is respectively completed, so as to constitute completed cell device.The performance test results show：The MoS2/ Si p n junction devices have obvious photovoltaic feature, in 15mW/cm2Under illumination condition, short circuit current is 3.16mA/cm2, open-circuit voltage is 0.13V, and fill factor, curve factor is 0.46, and conversion efficiency is 1.3%.
Description
Technical field
The invention belongs to new energy photovoltaic field, a kind of MoS has been concretely related to2/ Si p-n junction the sun
Energy battery device, and MoS is prepared based on magnetron sputtering technique2The method of/Si p-n junction solar cell devices.
Background technology
Since 21st century, with social development and the improvement of people's living standards, demand of the people to the energy
Sharply increase.The increasingly depleted of traditional fossil energy and the destruction that environment is caused gradually is manifested, force various countries by new energy
Development and utilization as national future source of energy development strategy.Solar energy is most universal in new energy, is also relatively early to be made by people
, and with good with power technology compatibility, the advantages of safe.Solar cell is a kind of common by solar energy
Be converted to the device of electric energy.80% is crystal silicon solar energy battery, crystal silicon solar energy battery conversion effect on current photovoltaic market
Rate has reached 24.7%, close to theoretical values 30%.But production process high energy consumption, high cost is big for environment pollution, serious resistance
The large-scale popularization and application of crystal silicon solar energy battery are hindered.Secondly, cadmium telluride (CdTe) and CIGS (CIGS) film are too
Positive energy battery also occupies very big proportion on photovoltaic market.The cadmium telluride (CdTe) and copper and indium of the first solar cell company of the U.S.
The photoelectric transformation efficiency of gallium selenium (CIGS) solar cell has all reached more than 11%, but in cadmium telluride, tellurium is tellurian
Rare element, meanwhile, heavy metal cadmium in cadmium telluride diaphragm solar battery can be polluted to environment in the industrial production.Copper
Indium gallium selenium thin-film solar cells preparation flow is complicated, and high cost, defective products rate is high, and battery initialization layer selenization technology is used
H2Se gases, there is severe toxicity, volatile.These unfavorable conditions all limit this kind of compound in the extensive of area of solar cell
Using.In thin film type solar battery research, dye-sensitized nano film solar battery preparation cost is than relatively low, current this electricity
The laboratory peak efficiency in pond reaches 12%.But due to the presence of liquid electrolyte, the less stable of this battery.Therefore,
A kind of environmental protection is found, low cost efficiently, is stablized, and the solar cell of process is simple has turned into current heat subject.At present
Various novel semiconductor materials are applied to the development of novel thin film solar cell, wherein semiconductor MoS2In photovoltaic art table
The premium properties for revealing is attracted wide attention.
MoS2It is a kind of transient metal sulfide, stable chemical nature, thermal stability is good.Therefore, MoS2As a kind of new
Type two-dimensional layer nano material is widely used in the fields such as physics, material, chemistry.The MoS of stratiform2Have on nanoscale
Two-dimensional structure, this is easier to realize the miniaturization of semiconductor and high energy efficiency electronics core than the three-dimensional bulk structure of nano silicon material
Piece.For example：Individual layer MoS2Transistor it is verified that switch ratio reached 108, and energy consumption is relatively low.Relative to Graphene
Zero band gap, molybdenum bisuphide has regulatable band gap (MoS21.2~1.8eV of energy gap), therefore prepare
Field of photoelectric devices has wide field.Tsai et al. proposes the individual layer MoS obtained using chemical deposition2With p-Si
P-N junction is formd, test result indicate that, the conversion efficiency of the solar cell device of this structure has reached 5.23%, is the knot
The highest conversion efficiency reached in the transient metal sulfide solar cell of structure.But, individual layer MoS2In light absorbs and electronics
Transfer aspect all existing defects.Shanmugam et al. proposes the multilayer MoS deposited on ito glass2With metallic gold (Au)
Form schottky junction, the photoelectricity of the solar cell of the structure changes efficiency and reached 1.8%, but, the preparation process is answered
Miscellaneous, surface defect is more, and bad products rate is high.Comparatively speaking, MoS2Thin-film solar cells preparation process is simple, easy big face
Product growth, nonhazardous material is produced during preparation and use.Meanwhile, with film shape, be conducive to MoS2Material and tradition
Semiconductor Si is overlapped integrated, is especially suitable for large-scale industrial production.
The content of the invention
Based on above-mentioned technical problem, the present invention provides a kind of MoS2/ Si p-n junction solar cell devices, and the MoS2/
The preparation method of Si p-n junction solar cell devices.
The adopted technical solution is that：
A kind of MoS2/ Si p-n junction solar cell devices, including MoS2Film layer, as MoS2The Si of film layer carrier
Substrate, metal Pd electrode and metal In electrodes, MoS2Film layer is arranged on Si substrates simultaneously, and metal Pd electrode is arranged on MoS2It is thin
Film surface, metal In electrodes are arranged on Si substrate another sides, and metal Pd electrode is connected Ni metal and leads respectively with metal In electrodes
Line.
Preferably, the MoS2Thin film layer thickness is 70-80nm.
Preferably, the Si substrates are p-type Si single crystalline substrates, and resistivity is 1.2~1.8 Ω cm.
Preferably, the thickness of the metal Pd electrode is 30-40nm, and the thickness of the metal In electrodes is 0.2mm, described
A diameter of 0.1mm of Cu wires.
A kind of MoS2The preparation method of/Si p-n junction solar cell devices, comprises the following steps：
(1) Si substrates are chosen, first time cleaning is carried out to it, then using Si substrates after chemical corrosion method removal cleaning
Surface oxide layer, then to remove surface oxide layer Si substrates carry out second cleaning, Si substrates are done after the completion of cleaning
It is dry；
(2) dried Si substrates are loaded into pallet and is put into vacuum chamber, under Ar gas gaseous environments, using direct magnetic control
Sputtering technology, using the Ions Bombardment MoS for ionizing out2Target, MoS is deposited in Si substrate surfaces2Film layer；
(3) again under vacuum chamber and Ar gas gaseous environments, using magnetically controlled DC sputtering technology, banged using the ion for ionizing out
Pd targets are hit, in MoS2Thin-film surface deposited metal Pd electrodes；
(4) hot pressing mode is used, the compacting of metal In electrodes is completed in Si substrate backs；
(5) Ni metal wire is drawn on metal Pd electrode and metal In electrodes respectively, MoS is completed2/ Si p-n junction the sun
The preparation of energy battery device.
Preferably, in step (1), the Si substrates are p-type Si single crystalline substrates, and size is 10 × 10mm, and resistivity is 1.2
~1.8 Ω cm；The first time cleaning process is as follows：Si substrates with oxide layer are cleaned by ultrasonic in absolute alcohol high
600s；The removal process of the Si substrate surfaces oxide layer is as follows：It is 4% that Si substrates with oxide layer are put into volume fraction
Hydrofluoric acid solution in, and be cleaned by ultrasonic 60s；Second cleaning process is as follows：By Si substrates successively in absolute alcohol high and
Alternately it is cleaned by ultrasonic 3 times in acetone soln, the time span of cleaning is 180s every time；The Si substrates drying process is to use dry
Dry nitrogen dries up Si substrates, and nitrogen gas purity is 99.95%.
Preferably, in step (2), the MoS2Target is MoS2Ceramic target, target purity is 99.9%, the Ar gas gas
Pressure maintains 0.3Pa constant, and target-substrate distance is 50mm, and the depositing temperature of film layer is 380 DEG C, and thin film layer thickness is 70-80nm.
Preferably, in step (3), the Pd targets are Pd metallic targets, and target purity is 99.99%, the Ar gas air pressure
Maintain 3Pa constant, target-substrate distance is 50mm, and the depositing temperature of film layer is 20-25 DEG C, and metal Pd thickness of electrode is 30-40nm.
Preferably, in step (2) and step (3), the back end vacuum of the vacuum chamber is 5 × 10-4Pa, vacuum condition
It is to be obtained jointly by mechanical pump and molecular pump two-stage vacuum pump.
Preferably, in step (4), the thickness of the metal In electrodes is 0.2mm.
Compared with prior art, the method have the benefit that：
The present invention deposits MoS by p-Si substrate surfaces2Film, forms p-n junction, the photovoltaic having using the p-n junction
Effect, have developed a kind of MoS2/ Si p-n junction solar cell devices.Test result shows：It is 15mW/cm in power2Illumination
Under the conditions of, prepared MoS2/ Si p-n junction solar cells have obvious photovoltaic performance, short circuit current 3.16mA/cm2, open
Road voltage 0.13V, fill factor, curve factor 0.46, photoelectric transformation efficiency 1.3%.Meanwhile, the MoS2/ Si p-n junction solar cells have
Response time is fast, and repeatability is high, weaker photo attenuation effect, with low cost, steady performance, and preparation method
Simply, energy consumption is low, environmental protection.
Brief description of the drawings
The invention will be further described with reference to the accompanying drawings and detailed description：
Fig. 1 is prepared MoS2The Raman spectrograms of/Si p-n junctions.
Fig. 2 is MoS2The structural representation of/Si p-n junction solar cell device performance measurements.
Fig. 3 is MoS2The photovoltaic performance curve of/Si p-n junction solar cell devices.
Fig. 4 is MoS2/ Si p-n junction solar cell device short circuit currents with illumination condition response performance.
Fig. 5 is MoS2/ Si p-n junction solar cell device open-circuit voltages with illumination condition response performance.
Specific embodiment
The present invention utilizes magnetically controlled DC sputtering technology, and MoS is deposited in p-Si Semiconductor substrates2Film layer, forms p-n
Knot.When there is illumination, in the presence of built in field, there is diffusion and drift about in photo-generated carrier, final p-n junction two ends form one
The photovoltage of individual stabilization, i.e. photovoltaic effect.
Below to MoS2The structure and preparation method of/Si p-n junction solar cell devices are described in detail.
A kind of MoS2/ Si p-n junction solar cell devices, including MoS2Film layer, as MoS2The Si of film layer carrier
Electrode and metal In back electrodes before substrate, metal Pd.MoS2Film layer is arranged on Si substrate surfaces, MoS2Thin film layer thickness is 70-
80nm, Si substrate are p-type Si single crystalline substrates, and resistivity is 1.2~1.8 Ω cm.Electrode is arranged on MoS before metal Pd2Film
Layer surface, metal In back electrodes are arranged on Si substrate backs.Electrode is connected Ni metal respectively with metal In back electrodes before metal Pd
Wire.The thickness of electrode is 30-40nm before metal Pd, and the thickness of metal In back electrodes is 0.2mm, Cu wires it is a diameter of
0.1mm。
Above-mentioned MoS2The preparation method of/Si p-n junction solar cell devices, comprises the following steps：
(1) p-type Si single crystalline substrates are chosen, size is 10 × 10mm, and resistivity is 1.2~1.8 Ω cm, and the is carried out to it
Once clean, then using Si substrate surface oxide layers after chemical corrosion method removal cleaning, then to removal surface oxide layer
Si substrates carry out second cleaning, and Si substrates are dried after the completion of cleaning.
(2) dried Si substrates are loaded into pallet and is put into vacuum chamber, the back end vacuum of vacuum chamber is 5 × 10-4Pa,
Under Ar gas gaseous environments, using magnetically controlled DC sputtering technology, using the Ions Bombardment MoS for ionizing out2Target, in Si substrate tables
Face deposits MoS2Film layer.The MoS2Target is MoS2Ceramic target, target purity is 99.9%, and the Ar gas air pressure is maintained
0.3Pa is constant, and target-substrate distance is 50mm, and the depositing temperature of film layer is 380 DEG C, and thin film layer thickness is 70-80nm.
(3) again under vacuum chamber and Ar gas gaseous environments, using magnetically controlled DC sputtering technology, banged using the ion for ionizing out
Pd targets are hit, in MoS2Electrode before thin-film surface deposited metal Pd.The back end vacuum of the vacuum chamber is 5 × 10-4Pa, institute
Pd targets are stated for Pd metallic targets, target purity is 99.99%, the Ar gas air pressure maintenance 3Pa is constant, and target-substrate distance is 50mm, thin
The depositing temperature of film layer is 20-25 DEG C, and thickness of electrode is 30-40nm before metal Pd.
(4) hot pressing mode is used, the compacting of metal In back electrodes is completed in Si substrate backs.The metal In back electrodes
Thickness is 0.2mm.
(5) draw the Ni metal wire of a diameter of 0.1mm before the metal Pd on electrode and metal In back electrodes respectively, complete
MoS2The preparation of/Si p-n junction solar cell devices.
In step (1), the first time cleaning process is as follows：Si substrates with oxide layer is ultrasonic in absolute alcohol high
Cleaning 600s；The removal process of the Si substrate surfaces oxide layer is as follows：Si substrates with oxide layer are put into volume fraction
In for 4% hydrofluoric acid solution, and it is cleaned by ultrasonic 60s；Second cleaning process is as follows：By Si substrates successively in high-purity wine
Alternately it is cleaned by ultrasonic 3 times in essence and acetone soln, the time span of cleaning is 180s every time；The Si substrates drying process is to use
Drying nitrogen dries up Si substrates, and nitrogen gas purity is 99.95%.
In step (2) and step (3), the vacuum condition is obtained jointly by mechanical pump and molecular pump two-stage vacuum pump.
Effect of the invention is further illustrated with reference to performance measurements：
Fig. 1 is the Raman spectrograms of MoS2/Si p-n junctions.Raman shift 373cm in figure-1And 410cm-1Scattering peak is
MoS2The characteristic peak of film, corresponds in plane vibration pattern (E respectively1 2g) and out-of-plane vibration pattern (A1g).Raman shift 520cm-1For
The scattering peak of Si substrates.
Fig. 2 is MoS2The structural representation of/Si p-n junction solar cell device performance measurements.In performance test process
In, the positive direction for defining electric current is to flow to electrode before metal Pd by metal In back electrodes.
Fig. 3 is MoS2The photovoltaic performance curve of/Si p-n junction solar cell devices.Two curves represent respectively it is dark and
15mW/cm2VA characteristic curve under illumination condition.As illustrated, prepared MoS2/ Si p-n junction solar cell devices
I-V curve reveal obvious asymmetric feature, this is primarily due to MoS2Film has good with the p-n junction that Si substrates are formed
Good rectification characteristic.In 15mW/cm2Under illumination condition, the MoS2/ Si p-n junction solar cell devices show good light
Volt property：Open-circuit voltage 0.13V, short-circuit current density 3.16mA/cm2, and the MoS2/ Si p-n junction solar cell devices
Fill factor, curve factor be 0.46, conversion efficiency has reached 1.3%.At home and abroad there is no MoS under this structure at present2/ Si p-n junctions
The report of solar cell device.
Fig. 4 is MoS2/ Si p-n junction solar cell device short circuit currents with illumination condition response performance.Test voltage
It is 0V.As illustrated, by changing the illumination condition residing for it, prepared MoS2/ Si p-n junction solar cell devices, in light
According to condition, electric current rapidly increases to 3.16mA/cm2, in dark condition, electric current reduces rapidly.
Fig. 5 is MoS2/ Si p-n junction solar cell device open-circuit voltages with illumination condition response performance.Test voltage
It is 0V.As illustrated, by changing the illumination condition residing for it, prepared MoS2/ Si p-n junctions solar cell device is showed
Go out good photo absorption property, there is fast response time, in stable condition, repeated high.
Claims (2)
1. a kind of MoS2The preparation method of/Si p-n junction solar cell devices, it is characterised in that the device includes MoS2Film
Layer, as MoS2The Si substrates of film layer carrier, metal Pd electrode and metal In electrodes, MoS2Film layer is splashed using direct magnetic control
The technology of penetrating is deposited on Si substrates simultaneously, and metal Pd electrode is deposited on MoS using magnetically controlled DC sputtering technology2Thin-film surface, gold
Category In electrodes are arranged on Si substrate another sides, and metal Pd electrode is connected Ni metal wire respectively with metal In electrodes；The MoS2
Thin film layer thickness is 70-80nm；The Si substrates are p-type Si single crystalline substrates, and resistivity is 1.2~1.8 Ω cm；The metal
The thickness of Pd electrodes is 30-40nm, and the thickness of the metal In electrodes is 0.2mm, a diameter of 0.1mm of the Cu wires；System
Preparation Method is comprised the following steps：
(1) Si substrates are chosen, first time cleaning is carried out to it, then using Si substrate surfaces after chemical corrosion method removal cleaning
Oxide layer, then to remove surface oxide layer Si substrates carry out second cleaning, Si substrates are dried after the completion of cleaning；
(2) dried Si substrates are loaded into pallet and is put into vacuum chamber, under Ar gas gaseous environments, using magnetically controlled DC sputtering
Technology, using the Ions Bombardment MoS for ionizing out2Target, MoS is deposited in Si substrate surfaces2Film layer；
(3) again under vacuum chamber and Ar gas gaseous environments, using magnetically controlled DC sputtering technology, using the Ions Bombardment Pd for ionizing out
Target, in MoS2Thin-film surface deposited metal Pd electrodes；
(4) hot pressing mode is used, the compacting of metal In electrodes is completed in Si substrate backs；
(5) Ni metal wire is drawn on metal Pd electrode and metal In electrodes respectively, MoS is completed2/ Si p-n junction solar-electricities
The preparation of pond device；
In step (1), the Si substrates are p-type Si single crystalline substrates, and size is 10 × 10mm, and resistivity is 1.2~1.8 Ω
cm；The first time cleaning process is as follows：Si substrates with oxide layer are cleaned by ultrasonic 600s in absolute alcohol high；The Si
The removal process of substrate surface oxide layer is as follows：Si substrates with oxide layer are put into the hydrofluoric acid that volume fraction is 4% molten
In liquid, and it is cleaned by ultrasonic 60s；Second cleaning process is as follows：By Si substrates successively in absolute alcohol high and acetone soln
Alternately it is cleaned by ultrasonic 3 times, the time span of cleaning is 180s every time；The Si substrates drying process is to be served as a contrast Si with drying nitrogen
Bottom blowing is done, and nitrogen gas purity is 99.95%；
In step (2), the MoS2Target is MoS2Ceramic target, target purity is 99.9%, and the Ar gas air pressure maintains 0.3Pa
Constant, target-substrate distance is 50mm, and the depositing temperature of film layer is 380 DEG C, and thin film layer thickness is 70-80nm；
In step (3), the Pd targets are Pd metallic targets, and target purity is 99.99%, and the Ar gas air pressure maintains 3Pa constant,
Target-substrate distance is 50mm, and the depositing temperature of film layer is 20-25 DEG C, and metal Pd thickness of electrode is 30-40nm；
In step (4), the thickness of the metal In electrodes is 0.2mm.
2. a kind of MoS according to claim 12The preparation method of/Si p-n junction solar cell devices, it is characterised in that：
In step (2) and step (3), the back end vacuum of the vacuum chamber is 5 × 10-4Pa, vacuum condition is by mechanical pump and divides
Sub- pump two-stage vacuum pump is obtained jointly.
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| CN105226125B (en) * | 2015-09-06 | 2017-01-18 | 中国石油大学(华东) | Pd-MoS2 heterojunction photovoltaic solar cell device and preparation method thereof |
| CN105244414B (en) * | 2015-10-20 | 2017-04-12 | 华中科技大学 | Molybdenum disulfide / silicon heterojunction solar energy cell and preparation method thereof |
| CN105161576B (en) * | 2015-10-20 | 2017-04-12 | 华中科技大学 | Preparation method of Schottky solar cell based on molybdenum disulfide |
| CN105702776B (en) * | 2016-02-03 | 2017-03-15 | 北京科技大学 | A kind of self-driven photo-detector and preparation method thereof |
| CN106129796A (en) * | 2016-08-09 | 2016-11-16 | 广东工业大学 | The MoS prepared based on magnetron sputtering method2saturable absorption body thin film and corresponding ultrashort pulse fiber laser |
| CN107887469A (en) * | 2017-10-19 | 2018-04-06 | 苏州科技大学 | A kind of selenizing molybdenum/silicon heterogenous solar cell and preparation method thereof |
| CN109904238B (en) * | 2019-01-14 | 2021-06-08 | 中国科学院半导体研究所 | Schottky field effect transistor based on silicon and transition metal sulfide and preparation method thereof |
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| CN104049022A (en) * | 2014-06-10 | 2014-09-17 | 中国石油大学(华东) | Molybdenum disulfide/silicon heterogeneous film component with hydrogen sensitivity effect as well as preparation method and application thereof |
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