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CN105870270B - LED extensional superlattice growing methods - Google Patents

LED extensional superlattice growing methods Download PDF

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Publication number
CN105870270B
CN105870270B CN201610379642.6A CN201610379642A CN105870270B CN 105870270 B CN105870270 B CN 105870270B CN 201610379642 A CN201610379642 A CN 201610379642A CN 105870270 B CN105870270 B CN 105870270B
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CN105870270A (en
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黄胜蓝
夏玺华
徐平
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Xiangneng Hualei Optoelectrical Co Ltd
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Xiangneng Hualei Optoelectrical Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen

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Abstract

This application discloses a kind of LED extensional superlattices growing methods, include successively：Processing substrate, low temperature growth buffer layer GaN, the GaN layer that undopes, the N-type GaN layer of growth doping Si, growth MgAlGaN/SiAlN superlattice layers, growth luminescent layer, growing P-type AlGaN layer, p-type GaN layer, the cooling down for growing doping Mg are grown.After the N-type GaN layer of the growth doping Si, before the growth luminescent layer, MgAlGaN/SiAlN superlattice layers are introduced, LED current can be extended, reduce LED driving voltages, LED light is promoted and imitate performance, improve LED luminous intensities.

Description

LED epitaxial superlattice growth method
Technical Field
The application relates to the technical field of LED epitaxial design application, in particular to an LED epitaxial superlattice growth method.
Background
At present, an LED (Light Emitting Diode) is a solid lighting, and has the advantages of small volume, low power consumption, long service life, high brightness, environmental protection, firmness, durability and the like, which are accepted by consumers, and the scale of the domestic production of the LED is gradually enlarged; demand for LED luminance and light efficiency is increasing day by day in the market, and how to grow better epitaxial wafer receives attention increasingly, because the improvement of epitaxial layer crystal quality, the performance of LED device can be promoted, and LED's luminous efficiency, life-span, ageing resistance ability, antistatic capacity, stability can promote along with the promotion of epitaxial layer crystal quality.
However, the current distribution of the N layers epitaxially grown in the conventional sapphire LED is not uniform, which causes the current crowding and the resistance of the N layers to be high, and causes the current distribution of the light emitting layer to be non-uniform, thus the light emitting efficiency is not high.
Disclosure of Invention
In view of this, the present application provides a method for growing an LED epitaxial superlattice, and introduces an MgAlGaN/SiAlN superlattice layer, so as to expand LED current, reduce LED driving voltage, improve LED light efficiency, and improve LED light emission intensity.
In order to solve the technical problem, the following technical scheme is adopted:
an LED epitaxial superlattice growth method is characterized by sequentially comprising the following steps: processing a substrate, growing a low-temperature buffer layer GaN, growing an undoped GaN layer, growing an N-type GaN layer doped with Si, growing a light emitting layer, growing a P-type AlGaN layer, growing a P-type GaN layer doped with Mg, cooling,
after the growing the Si-doped N-type GaN layer and before the growing the light emitting layer, the method further comprises the following steps: growing a MgAlGaN/SiAlN superlattice layer,
the MgAlGaN/SiAlN superlattice layer is grown by the following steps: keeping the pressure of the reaction cavity at 750mbar-900mbar and the temperature at 1000-1100 ℃, and introducing NH with the flow rate of 40000sccm-50000sccm3110L/min-130L/min H2TMAl of 200sccm-250sccm, TMGa of 200sccm-400sccm, Cp of 800sccm-900sccm2Mg, 40sccm-55sccm SiH4Growing a MgAlGaN/SiAlN superlattice layer;
the growing of the MgAlGaN/SiAlN superlattice layer further comprises the following steps:
keeping the pressure of the reaction cavity at 750mbar-900mbar and the temperature at 1000-1100 ℃, and introducing NH with the flow rate of 40000sccm-50000sccm3Cp of 800-900 sccm2Mg, TMGa of 200sccm-400sccm, TMAl of 200sccm-250sccm, and H of 110L/min-130L/min2Growing a MgAlGaN layer with the thickness of 10nm-20 nm;
keeping the pressure of the reaction cavity at 750mbar-900mbar and the temperature at 1000-1100 ℃, and introducing NH with the flow rate of 40000sccm-50000sccm3110L/min-130L/min H2TMAl of 200sccm-250sccm, SiH of 40sccm-55sccm4Growing a SiAlN layer, wherein the doping concentration of Si is 1E18atoms/cm3-5E18atoms/cm3；
The MgAlGaN layer and the SiAlN layer are periodically grown, the growth period is 10-18,
the order of growing the MgAlGaN layer and growing the SiAlN layer may be interchanged.
Preferably, wherein:
the processing substrate is further provided with: at 1000-1100 deg.CH of (A) to (B)2Introducing H of 100L/min-130L/min under the atmosphere2And keeping the pressure of the reaction cavity at 100mbar-300mbar, and processing the sapphire substrate for 5min-10 min.
Preferably, wherein:
the growing low-temperature buffer layer further comprises:
reducing the temperature to 500-600 ℃, keeping the pressure of the reaction cavity at 300-600 mbar, and introducing NH with the flow rate of 10000-20000 sccm3TMGa of 50sccm-100sccm and H of 100L/min-130L/min2Growing a low-temperature buffer layer GaN with the thickness of 20nm-40nm on a sapphire substrate;
raising the temperature to 1000-1100 ℃, keeping the pressure of the reaction cavity at 300-600 mbar, and introducing the NH with the flow rate of 30000-40000 sccm3H of 100L/min-130L/min2And keeping the temperature stable for 300-500 s, and corroding the low-temperature buffer layer GaN into irregular islands.
Preferably, wherein:
the growing of the undoped GaN layer further comprises the following steps:
raising the temperature to 1000-1200 ℃, keeping the pressure of the reaction cavity at 300mbar-600mbar, and introducing NH with the flow rate of 30000sccm-40000sccm3TMGa of 200sccm-400sccm, H of 100L/min-130L/min2And continuously growing the undoped GaN layer of 2-4 mu m.
Preferably, wherein:
the growing of the Si-doped N-type GaN layer further comprises the following steps:
keeping the pressure and the temperature of the reaction cavity unchanged, and introducing NH with the flow rate of 30000sccm-60000sccm3TMGa of 200sccm-400sccm, H of 100L/min-130L/min220sccm to 50sccm SiH4Continuously growing N-type GaN doped with Si of 3 μm-4 μm with a Si doping concentration of 5E18atoms/cm3-1E19atoms/cm3。
Preferably, wherein:
the growing light-emitting layer is further:
keeping the pressure of the reaction cavity at 300mbar-400mbar and the temperature at 700-750 ℃, and introducing NH with the flow rate of 50000sccm-70000sccm320sccm to 40sccm of TMGa, 1500sccm to 2000sccm of TMIn, 100L/min to 130L/min of N2Growing In doped with In to a thickness of 2.5nm to 3.5nmxGa(1-x)An N layer, wherein x is 0.20-0.25, and the light-emitting wavelength is 450nm-455 nm;
then raising the temperature to 750-850 ℃, keeping the pressure of the reaction cavity at 300mbar-400mbar, and introducing NH with the flow rate of 50000sccm-70000sccm320sccm-100sccm of TMGa and 100L/min-130L/min of N2Growing a GaN layer with the thickness of 8nm-15 nm;
repeating InxGa(1-x)Growth of N, and then repeating growth of GaN to alternately grow InxGa(1-x)The N/GaN luminescent layer has a control cycle number of 7-15.
Preferably, wherein:
the growing of the P-type AlGaN layer further comprises the following steps:
keeping the pressure of the reaction cavity between 200mbar and 400mbar and the temperature between 900 ℃ and 950 ℃, and introducing NH with the flow rate between 50000sccm and 70000sccm3TMGa of 30sccm-60sccm and H of 100L/min-130L/min2TMAl of 100sccm-130sccm, Cp of 1000sccm-1300sccm2Mg, continuously growing a P-type AlGaN layer with the thickness of 50nm to 100nm and the Al doping concentration of 1E20atoms/cm3-3E20atoms/cm3Mg doping concentration of 1E19atoms/cm3-1E20atoms/cm3。
Preferably, wherein:
the growing of the Mg-doped P-type GaN layer further comprises the following steps:
keeping the pressure of the reaction cavity at 400mbar-900mbar and the temperature at 950-1000 ℃, and introducing NH with the flow rate of 50000sccm-70000sccm320sccm-100sccm of TMGa and 100L/min-130L/min of H2Cp of 1000sccm-3000sccm2Mg, continuously growing a P-type GaN layer doped with Mg with the concentration of 1E19atoms/cm and the thickness of 50nm-200nm3-1E20atoms/cm3。
Preferably, wherein:
the cooling further comprises the following steps:
cooling to 650-680 ℃, preserving heat for 20-30 min, then closing the heating system and the gas supply system, and cooling along with the furnace.
Compared with the prior art, the method has the following effects:
compared with the traditional method, the LED epitaxial superlattice growth method introduces the MgAlGaN/SiAlN superlattice layer after the Si-doped N-type GaN layer is grown and before the luminescent layer is grown. The MgAlGaN/SiAlN superlattice layer which is a new material uses a high-energy band of GaN as a potential epitaxy barrier electron to be transmitted from the N layer to the light-emitting layer too fast, and electrons which are transmitted in a longitudinal direction and are crowded are blocked by the GaN energy band and spread in a proper transverse direction; meanwhile, the MgAlGaN/SiAlN superlattice layer forms high-concentration two-dimensional electron gas, the transverse mobility of the two-dimensional electron gas is very high, the transverse expansion of electrons is accelerated, and the current is effectively expanded when passing through the MgAlGaN/SiAlN superlattice layer macroscopically, so that the current of a light emitting layer is uniformly distributed, the luminous intensity of the LED is improved, and various electrical parameters of the LED are improved.
Drawings
The accompanying drawings, which are included to provide a further understanding of the application and are incorporated in and constitute a part of this application, illustrate embodiment(s) of the application and together with the description serve to explain the application and not to limit the application. In the drawings:
FIG. 1 is a flow chart of a method of growing an epitaxial superlattice for an LED in accordance with the present invention;
FIG. 2 is a schematic structural diagram of an epitaxial layer of an LED according to the present invention;
FIG. 3 is a schematic structural view of an epitaxial layer of an LED in a comparative example;
the LED comprises a substrate 1, a substrate 2, a low-temperature buffer layer GaN, a U-shaped GaN layer 3, a Si-doped GaN layer 4, a superlattice layer 5, a MgAlGaN layer 5.1, a SiAlN layer 5.2, a luminescent layer 6, a light-emitting layer 6.1 and InxGa(1-x)N layer, 6.2 GaN layer, 7P type AlGaN layer, 8 Mg doped P type GaN layer.
Detailed Description
As used in the specification and in the claims, certain terms are used to refer to particular components. As one skilled in the art will appreciate, manufacturers may refer to a component by different names. This specification and claims do not intend to distinguish between components that differ in name but not function. In the following description and in the claims, the terms "include" and "comprise" are used in an open-ended fashion, and thus should be interpreted to mean "include, but not limited to. "substantially" means within an acceptable error range, and a person skilled in the art can solve the technical problem within a certain error range to substantially achieve the technical effect. Furthermore, the term "coupled" is intended to encompass any direct or indirect electrical coupling. Thus, if a first device couples to a second device, that connection may be through a direct electrical coupling or through an indirect electrical coupling via other devices and couplings. The description which follows is a preferred embodiment of the present application, but is made for the purpose of illustrating the general principles of the application and not for the purpose of limiting the scope of the application. The protection scope of the present application shall be subject to the definitions of the appended claims.
Example 1
Referring to FIG. 2, the present invention uses MOCVD to grow high brightness GaN-based LEDAnd (6) carrying out tablet extending. By using high-purity H2Or high purity N2Or high purity H2And high purity N2The mixed gas of (2) is used as a carrier gas, high-purity NH3As the N source, a metal organic source, trimethyl gallium (TMGa) as the gallium source, trimethyl indium (TMIn) as the indium source, and an N-type dopant, Silane (SiH)4) Trimethylaluminum (TMAl) as the aluminum source and magnesium diclomelate (CP) as the P-type dopant2Mg) substrate is (001) plane sapphire and the reaction pressure is between 70mbar and 900 mbar. The specific growth mode is as follows:
an LED epitaxial superlattice growth method, as shown in fig. 1, sequentially includes: processing a substrate, growing a low-temperature buffer layer GaN, growing an undoped GaN layer, growing an N-type GaN layer doped with Si, growing a light emitting layer, growing a P-type AlGaN layer, growing a P-type GaN layer doped with Mg, cooling,
after the growing of the Si-doped N-type GaN layer and before the growing of the light emitting layer, the method further comprises the following steps: growing a MgAlGaN/SiAlN superlattice layer,
the MgAlGaN/SiAlN superlattice layer is grown by the following steps: keeping the pressure of the reaction cavity at 750mbar-900mbar and the temperature at 1000-1100 ℃, and introducing NH with the flow rate of 40000sccm-50000sccm3110L/min-130L/min H2TMAl of 200sccm-250sccm, TMGa of 200sccm-400sccm, Cp of 800sccm-900sccm2Mg, 40sccm-55sccm SiH4Growing a MgAlGaN/SiAlN superlattice layer;
the growing of the MgAlGaN/SiAlN superlattice layer further comprises the following steps:
keeping the pressure of the reaction cavity at 750mbar-900mbar and the temperature at 1000-1100 ℃, and introducing NH with the flow rate of 40000sccm-50000sccm3Cp of 800-900 sccm2Mg, TMGa of 200sccm-400sccm, TMAl of 200sccm-250sccm, and H of 110L/min-130L/min2Growing a MgAlGaN layer with the thickness of 10nm-20 nm;
keeping the pressure of the reaction cavity at 750mbar-900mbar and the temperature at 1000-1100 ℃, and introducing NH with the flow rate of 40000sccm-50000sccm3110L/min-130L/min H2、200sccm-TMAl of 250sccm, SiH of 40sccm-55sccm4Growing a SiAlN layer, wherein the doping concentration of Si is 1E18atoms/cm3-5E18atoms/cm3；
The MgAlGaN layer and the SiAlN layer are periodically grown, the growth period is 10-18,
the order of growing the MgAlGaN layer and growing the SiAlN layer may be interchanged.
After the Si-doped N-type GaN layer is grown and before the luminescent layer is grown, the step of growing the MgAlGaN/SiAlN superlattice layer is introduced, and the MgAlGaN/SiAlN superlattice layer is grown. The MgAlGaN/SiAlN superlattice layer utilizes a high-energy band of GaN as a potential epitaxy barrier to prevent electrons from being transmitted from the N layer to the light-emitting layer too fast, and electrons which are transmitted in a longitudinal direction and are crowded are prevented from being diffused transversely properly when encountering the energy band of the GaN; meanwhile, the MgAlGaN/SiAlN superlattice layer forms high-concentration two-dimensional electron gas, the transverse mobility of the two-dimensional electron gas is very high, the transverse expansion of electrons is accelerated, and the current is effectively expanded when passing through the MgAlGaN/SiAlN superlattice layer macroscopically, so that the current of a light emitting layer is uniformly distributed, and the luminous intensity of the LED is favorably improved.
Example 2
An example of an application of the LED epitaxial superlattice growth method of the present invention is provided below, with the epitaxial structure shown in fig. 2 and the growth method shown in fig. 1. MOCVD is used to grow high-brightness GaN-based LED epitaxial wafers. By using high-purity H2Or high purity N2Or high purity H2And high purity N2The mixed gas of (2) is used as a carrier gas, high-purity NH3As the N source, a metal organic source, trimethyl gallium (TMGa) as the gallium source, trimethyl indium (TMIn) as the indium source, and an N-type dopant, Silane (SiH)4) Trimethylaluminum (TMAl) as the aluminum source and magnesium diclomelate (CP) as the P-type dopant2Mg), the substrate is (0001) plane sapphire, and the reaction pressure is between 70mbar and 900 mbar. The specific growth mode is as follows:
step 101, processing a substrate:
h at 1000-1100 deg.C2Introducing H of 100L/min-130L/min under the atmosphere2And keeping the pressure of the reaction cavity at 100mbar-300mbar, and processing the sapphire substrate for 5min-10 min.
Step 102, growing a low-temperature buffer layer GaN:
reducing the temperature to 500-600 ℃, keeping the pressure of the reaction cavity at 300-600 mbar, and introducing NH with the flow rate of 10000-20000 sccm3(sccm is standard milliliters per minute), TMGa of 50sccm-100sccm, H of 100L/min-130L/min2Growing a low-temperature buffer layer GaN with the thickness of 20nm-40nm on a sapphire substrate;
raising the temperature to 1000-1100 ℃, keeping the pressure of the reaction cavity at 300-600 mbar, and introducing the NH with the flow rate of 30000-40000 sccm3H of 100L/min-130L/min2And keeping the temperature stable for 300-500 s, and corroding the low-temperature buffer layer GaN into irregular islands.
Step 103, growing an undoped GaN layer:
raising the temperature to 1000-1200 ℃, keeping the pressure of the reaction cavity at 300mbar-600mbar, and introducing NH with the flow rate of 30000sccm-40000sccm3TMGa of 200sccm-400sccm, H of 100L/min-130L/min2And continuously growing the undoped GaN layer of 2-4 mu m.
Step 104, growing an N-type GaN layer doped with Si:
keeping the pressure and the temperature of the reaction cavity unchanged, and introducing NH with the flow rate of 30000sccm-60000sccm3TMGa of 200sccm-400sccm, H of 100L/min-130L/min220sccm to 50sccm SiH4Continuously growing N-type GaN doped with Si of 3 μm-4 μm with a Si doping concentration of 5E18atoms/cm3-1E19atoms/cm3. (wherein 1E19 represents the power of 10 to the power of 19, i.e. 1 x 1019By analogy, atoms/cm3Is a unit of doping concentration, the same applies below)
105, growing an MgAlGaN/SiAlN superlattice layer:
the MgAlGaN/SiAlN superlattice layer is grown by the following steps: keeping the pressure of the reaction cavity at 750mbar-900mbar and the temperature at 1000-1100 ℃, and introducing NH with the flow rate of 40000sccm-50000sccm3110L/min-130L/min H2TMAl of 200sccm-250sccm, TMGa of 200sccm-400sccm, Cp of 800sccm-900sccm2Mg, 40sccm-55sccm SiH4Growing a MgAlGaN/SiAlN superlattice layer;
the growing of the MgAlGaN/SiAlN superlattice layer further comprises the following steps:
keeping the pressure of the reaction cavity at 750mbar-900mbar and the temperature at 1000-1100 ℃, and introducing NH with the flow rate of 40000sccm-50000sccm3Cp of 800-900 sccm2Mg, TMGa of 200sccm-400sccm, TMAl of 200sccm-250sccm, and H of 110L/min-130L/min2Growing a MgAlGaN layer with the thickness of 10nm-20 nm;
keeping the pressure of the reaction cavity at 750mbar-900mbar and the temperature at 1000-1100 ℃, and introducing NH with the flow rate of 40000sccm-50000sccm3110L/min-130L/min H2TMAl of 200sccm-250sccm, SiH of 40sccm-55sccm4Growing a SiAlN layer, wherein the doping concentration of Si is 1E18atoms/cm3-5E18atoms/cm3；
The MgAlGaN layer and the SiAlN layer are periodically grown, the growth period is 10-18,
the order of growing the MgAlGaN layer and growing the SiAlN layer may be interchanged.
Step 106, growing a light emitting layer:
keeping the pressure of the reaction cavity at 300mbar-400mbar and the temperature at 700-750 ℃, and introducing NH with the flow rate of 50000sccm-70000sccm320sccm to 40sccm of TMGa, 1500sccm to 2000sccm of TMIn, 100L/min to 130L/min of N2Growing In doped with In to a thickness of 2.5nm to 3.5nmxGa(1-x)An N layer, wherein x is 0.20-0.25, and the light-emitting wavelength is 450nm-455 nm;
then raising the temperature to 750-850 ℃, keeping the pressure of the reaction cavity at 300-400 mbar, and introducingNH with the flow rate of 50000sccm-70000sccm320sccm-100sccm of TMGa and 100L/min-130L/min of N2Growing a GaN layer with the thickness of 8nm-15 nm;
repeating InxGa(1-x)Growth of N, and then repeating growth of GaN to alternately grow InxGa(1-x)The N/GaN luminescent layer has a control cycle number of 7-15.
Step 107, growing a P-type AlGaN layer:
keeping the pressure of the reaction cavity between 200mbar and 400mbar and the temperature between 900 ℃ and 950 ℃, and introducing NH with the flow rate between 50000sccm and 70000sccm3TMGa of 30sccm-60sccm and H of 100L/min-130L/min2TMAl of 100sccm-130sccm, Cp of 1000sccm-1300sccm2Mg, continuously growing a P-type AlGaN layer with the thickness of 50nm to 100nm and the Al doping concentration of 1E20atoms/cm3-3E20atoms/cm3Mg doping concentration of 1E19atoms/cm3-1E20atoms/cm3。
Step 108, growing a P-type GaN layer doped with Mg:
keeping the pressure of the reaction cavity at 400mbar-900mbar and the temperature at 950-1000 ℃, and introducing NH with the flow rate of 50000sccm-70000sccm320sccm-100sccm of TMGa and 100L/min-130L/min of H2Cp of 1000sccm-3000sccm2Mg, continuously growing a P-type GaN layer doped with Mg with the concentration of 1E19atoms/cm and the thickness of 50nm-200nm3-1E20atoms/cm3。
Step 109, cooling:
cooling to 650-680 ℃, preserving heat for 20-30 min, then closing the heating system and the gas supply system, and cooling along with the furnace.
Example 3
A conventional LED epitaxial superlattice growth method is provided below as a comparative example of the present invention.
The conventional LED epitaxial growth method comprises the following steps (an epitaxial layer structure is shown in figure 3):
1. h at 1000-1100 deg.C2Introducing H of 100L/min-130L/min under the atmosphere2And keeping the pressure of the reaction cavity at 100mbar-300mbar, and processing the sapphire substrate for 5min-10 min.
2.1, reducing the temperature to 500-600 ℃, keeping the pressure of the reaction cavity at 300-600 mbar, and introducing NH with the flow rate of 10000-20000 sccm3(sccm is standard milliliters per minute), TMGa of 50sccm-100sccm, H of 100L/min-130L/min2Growing a low-temperature buffer layer GaN with the thickness of 20nm-40nm on a sapphire substrate;
2.2, raising the temperature to 1000-1100 ℃, keeping the pressure of the reaction cavity at 300-600 mbar and introducing the NH with the flow rate of 30000-40000 sccm3H of 100L/min-130L/min2And keeping the temperature stable for 300-500 s, and corroding the low-temperature buffer layer GaN into irregular islands.
3. Raising the temperature to 1000-1200 ℃, keeping the pressure of the reaction cavity at 300mbar-600mbar, and introducing NH with the flow rate of 30000sccm-40000sccm3TMGa of 200sccm-400sccm, H of 100L/min-130L/min2And continuously growing the undoped GaN layer of 2-4 mu m.
4. Keeping the pressure and the temperature of the reaction cavity unchanged, and introducing NH with the flow rate of 30000sccm-60000sccm3TMGa of 200sccm-400sccm, H of 100L/min-130L/min220sccm to 50sccm SiH4Continuously growing N-type GaN doped with Si of 3 μm-4 μm with a Si doping concentration of 5E18atoms/cm3-1E19atoms/cm3。
5. Keeping the pressure and the temperature of the reaction cavity unchanged, and introducing NH with the flow rate of 30000sccm-60000sccm3TMGa of 200sccm-400sccm, H of 100L/min-130L/min22sccm-10sccm SiH4Continuously growing N-type GaN doped with Si of 200nm-400nm with the Si doping concentration of 5E17atoms/cm3-1E18atoms/cm3。
6. Keeping the pressure of the reaction cavity at 300mbar-400mbar and the temperature at 700-750 ℃, and introducing NH with the flow rate of 50000sccm-70000sccm320sccm to 40sccm of TMGa, 1500sccm to 2000sccm of TMIn, 100L/min to 130L/min of N2Growing In doped with In to a thickness of 2.5nm to 3.5nmxGa(1-x)An N layer, wherein x is 0.20-0.25, and the light-emitting wavelength is 450nm-455 nm; then raising the temperature to 750-850 ℃, keeping the pressure of the reaction cavity at 300mbar-400mbar, and introducing NH with the flow rate of 50000sccm-70000sccm320sccm-100sccm of TMGa and 100L/min-130L/min of N2Growing a GaN layer with the thickness of 8nm-15 nm; repeating InxGa(1-x)Growth of N, and then repeating growth of GaN to alternately grow InxGa(1-x)The N/GaN luminescent layer has a control cycle number of 7-15.
7. Keeping the pressure of the reaction cavity between 200mbar and 400mbar and the temperature between 900 ℃ and 950 ℃, and introducing NH with the flow rate between 50000sccm and 70000sccm3TMGa of 30sccm-60sccm and H of 100L/min-130L/min2TMAl of 100sccm-130sccm, Cp of 1000sccm-1300sccm2Mg, continuously growing a P-type AlGaN layer with the thickness of 50nm to 100nm and the Al doping concentration of 1E20atoms/cm3-3E20atoms/cm3Mg doping concentration of 1E19atoms/cm3-1E20atoms/cm3。
8. Keeping the pressure of the reaction cavity at 400mbar-900mbar and the temperature at 950-1000 ℃, and introducing NH with the flow rate of 50000sccm-70000sccm320sccm-100sccm of TMGa and 100L/min-130L/min of H2Cp of 1000sccm-3000sccm2Mg, continuously growing a P-type GaN layer doped with Mg with the concentration of 1E19atoms/cm and the thickness of 50nm-200nm3-1E20atoms/cm3。
9. Cooling to 650-680 ℃, preserving heat for 20-30 min, then closing the heating system and the gas supply system, and cooling along with the furnace.
On the same bench, sample 1 was prepared according to the conventional LED growth method (method of comparative example), and sample 2 was prepared according to the method described in this patent; the difference in the parameters of the epitaxial growth methods of sample 1 and sample 2 is that the present invention introduces a step of growing a MgAlGaN/sian superlattice layer after growing a Si-doped N-type GaN layer, i.e., step 105 in example 2, step 105 is completely different from step 5 in the comparative example, and the growth conditions for growing other epitaxial layers are completely the same (see table 1).
Sample 1 and sample 2 were coated with an ITO layer of about 150nm under the same pre-process conditions, a Cr/Pt/Au electrode of about 1500nm under the same conditions, and a protective layer of SiO under the same conditions2About 100nm, the sample was then ground and cut under the same conditions into 635 μm by 635 μm (25mil by 25mil) chip particles, and then 100 dies were picked from the same positions of sample 1 and sample 2, respectively, and packaged into a white LED under the same packaging process. The photoelectric properties of sample 1 and sample 2 were then tested using an integrating sphere at a drive current of 350 mA.
Table 1 is a table comparing growth parameters of sample 1 and sample 2, and table 2 is a table comparing electrical parameters of sample 1 and sample 2.
TABLE 1 comparison of growth parameters
TABLE 2 comparison of the electrical parameters of the products of sample 1 and sample 2
As can be seen from the data comparison in table 2, in comparison with sample 1, the light efficiency of sample 2 is increased from 133.8Lm/w to 145.2Lm/w, the voltage is decreased from 3.2V to 3.12V, the reverse voltage is increased from 36V to 37.02V, the light emitting wavelength is reduced, the leakage current is reduced, and the yield of 2KV is increased from 92.20% to 93.50%, so the following conclusions can be drawn:
through the growth method provided by the patent, the LED light effects are numbered, the brightness is obviously improved, and other LED electrical parameters are also improved. Experimental data proves that the scheme of this patent can show the feasibility that promotes LED product light efficiency.
According to the embodiments, the application has the following beneficial effects:
compared with the traditional method, the LED epitaxial superlattice growth method has the advantages that the MgAlGaN/SiAlN superlattice layer grows after the Si-doped N-type GaN layer grows and before the luminescent layer grows. The novel MgAlGaN/SiAlN superlattice layer uses the high-energy band of GaN as a potential epitaxy barrier electron to be transmitted from the N layer to the light-emitting layer too fast, and electrons which are transmitted in a longitudinal direction and are crowded are blocked by the GaN energy band and spread in a proper transverse direction; meanwhile, the MgAlGaN/SiAlN superlattice layer forms high-concentration two-dimensional electron gas, the transverse mobility of the two-dimensional electron gas is very high, the transverse expansion of electrons is accelerated, and the current is effectively expanded when passing through the MgAlGaN/SiAlN superlattice layer macroscopically, so that the current of a light emitting layer is uniformly distributed, the luminous intensity of the LED is improved, and various electrical parameters of the LED are improved.
As will be appreciated by one skilled in the art, embodiments of the present application may be provided as a method, apparatus, or computer program product. Accordingly, the present application may take the form of an entirely hardware embodiment, an entirely software embodiment or an embodiment combining software and hardware aspects. Furthermore, the present application may take the form of a computer program product embodied on one or more computer-usable storage media (including, but not limited to, disk storage, CD-ROM, optical storage, and the like) having computer-usable program code embodied therein.
The foregoing description shows and describes several preferred embodiments of the present application, but as aforementioned, it is to be understood that the application is not limited to the forms disclosed herein, but is not to be construed as excluding other embodiments and is capable of use in various other combinations, modifications, and environments and is capable of changes within the scope of the inventive concept as expressed herein, commensurate with the above teachings, or the skill or knowledge of the relevant art. And that modifications and variations may be effected by those skilled in the art without departing from the spirit and scope of the application, which is to be protected by the claims appended hereto.

Claims (8)

1. An LED epitaxial superlattice growth method is characterized by sequentially comprising the following steps: processing a substrate, growing a low-temperature buffer layer GaN, growing an undoped GaN layer, growing an N-type GaN layer doped with Si, growing a light emitting layer, growing a P-type AlGaN layer, growing a P-type GaN layer doped with Mg, cooling,
after the growing the Si-doped N-type GaN layer and before the growing the light emitting layer, the method further comprises the following steps: growing a MgAlGaN/SiAlN superlattice layer,
the MgAlGaN/SiAlN superlattice layer is grown by the following steps: the pressure of the reaction cavity is kept between 750mbar and 900mbar, and the temperature is kept at 1000 DEG CNH with the flow rate of 40000sccm to 50000sccm is introduced at the temperature of minus 1100 DEG C3110L/min-130L/min H2TMAl of 200sccm-250sccm, TMGa of 200sccm-400sccm, Cp of 800sccm-900sccm2Mg, 40sccm-55sccm SiH4Growing a MgAlGaN/SiAlN superlattice layer;
the growing of the MgAlGaN/SiAlN superlattice layer further comprises the following steps:
keeping the pressure of the reaction cavity at 750mbar-900mbar and the temperature at 1000-1100 ℃, and introducing NH with the flow rate of 40000sccm-50000sccm3Cp of 800-900 sccm2Mg, TMGa of 200sccm-400sccm, TMAl of 200sccm-250sccm, and H of 110L/min-130L/min2Growing a MgAlGaN layer with the thickness of 10nm-20 nm;
keeping the pressure of the reaction cavity at 750mbar-900mbar and the temperature at 1000-1100 ℃, and introducing NH with the flow rate of 40000sccm-50000sccm3110L/min-130L/min H2TMAl of 200sccm-250sccm, SiH of 40sccm-55sccm4Growing a SiAlN layer, wherein the doping concentration of Si is 1E18atoms/cm3-5E18atoms/cm3；
The MgAlGaN layer and the SiAlN layer are periodically grown, the growth period is 10-18,
the sequence of growing the MgAlGaN layer and the SiAlN layer can be interchanged; wherein,
the growing light-emitting layer is further:
keeping the pressure of the reaction cavity at 300mbar-400mbar and the temperature at 700-750 ℃, and introducing NH with the flow rate of 50000sccm-70000sccm320sccm to 40sccm of TMGa, 1500sccm to 2000sccm of TMIn, 100L/min to 130L/min of N2Growing In doped with In to a thickness of 2.5nm to 3.5nmxGa(1-x)An N layer, wherein x is 0.20-0.25, and the light-emitting wavelength is 450nm-455 nm;
then raising the temperature to 750-850 ℃, keeping the pressure of the reaction cavity at 300mbar-400mbar, and introducing NH with the flow rate of 50000sccm-70000sccm320sccm-100sccm of TMGa and 100L/min-130L/min of N2Growing a GaN layer with the thickness of 8nm-15 nm;
repeating InxGa(1-x)Growth of N, and then repeating growth of GaN to alternately grow InxGa(1-x)N/The number of the control cycles of the GaN luminescent layer is 7-15.
2. The LED epitaxial superlattice growth method as claimed in claim 1, wherein,
the processing substrate is further provided with: h at 1000-1100 deg.C2Introducing H of 100L/min-130L/min under the atmosphere2And keeping the pressure of the reaction cavity at 100mbar-300mbar, and processing the sapphire substrate for 5min-10 min.
3. The LED epitaxial superlattice growth method as claimed in claim 1, wherein,
the growing low-temperature buffer layer further comprises:
reducing the temperature to 500-600 ℃, keeping the pressure of the reaction cavity at 300-600 mbar, and introducing NH with the flow rate of 10000-20000 sccm3TMGa of 50sccm-100sccm and H of 100L/min-130L/min2Growing a low-temperature buffer layer GaN with the thickness of 20nm-40nm on a sapphire substrate;
raising the temperature to 1000-1100 ℃, keeping the pressure of the reaction cavity at 300-600 mbar, and introducing the NH with the flow rate of 30000-40000 sccm3H of 100L/min-130L/min2And keeping the temperature stable for 300-500 s, and corroding the low-temperature buffer layer GaN into irregular islands.
4. The LED epitaxial superlattice growth method as claimed in claim 1, wherein,
the growing of the undoped GaN layer further comprises the following steps:
raising the temperature to 1000-1200 ℃, keeping the pressure of the reaction cavity at 300mbar-600mbar, and introducing NH with the flow rate of 30000sccm-40000sccm3TMGa of 200sccm-400sccm, H of 100L/min-130L/min2And continuously growing the undoped GaN layer of 2-4 mu m.
5. The LED epitaxial superlattice growth method as claimed in claim 1, wherein,
the growing of the Si-doped N-type GaN layer further comprises the following steps:
keeping the pressure and the temperature of the reaction cavity unchanged, and introducing NH with the flow rate of 30000sccm-60000sccm3TMGa of 200sccm-400sccm, H of 100L/min-130L/min220sccm to 50sccm SiH4Continuously growing N-type GaN doped with Si of 3 μm-4 μm with a Si doping concentration of 5E18atoms/cm3-1E19atoms/cm3。
6. The LED epitaxial superlattice growth method as claimed in claim 1, wherein,
the growing of the P-type AlGaN layer further comprises the following steps:
keeping the pressure of the reaction cavity between 200mbar and 400mbar and the temperature between 900 ℃ and 950 ℃, and introducing NH with the flow rate between 50000sccm and 70000sccm3TMGa of 30sccm-60sccm and H of 100L/min-130L/min2TMAl of 100sccm-130sccm, Cp of 1000sccm-1300sccm2Mg, continuously growing a P-type AlGaN layer with the thickness of 50nm to 100nm and the Al doping concentration of 1E20atoms/cm3-3E20atoms/cm3Mg doping concentration of 1E19atoms/cm3-1E20atoms/cm3。
7. The LED epitaxial superlattice growth method as claimed in claim 1, wherein,
the growing of the Mg-doped P-type GaN layer further comprises the following steps:
keeping the pressure of the reaction cavity at 400mbar-900mbar and the temperature at 950-1000 ℃, and introducing NH with the flow rate of 50000sccm-70000sccm320sccm-100sccm of TMGa and 100L/min-130L/min of H2Cp of 1000sccm-3000sccm2Mg, continuously growing a P-type GaN layer doped with Mg with the concentration of 1E19atoms/cm and the thickness of 50nm-200nm3-1E20atoms/cm3。
8. The LED epitaxial superlattice growth method as claimed in claim 1, wherein,
the cooling further comprises the following steps:
cooling to 650-680 ℃, preserving heat for 20-30 min, then closing the heating system and the gas supply system, and cooling along with the furnace.
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