CN105755531A - Seed crystal block applicable to mono-like silicon cast ingot - Google Patents
Seed crystal block applicable to mono-like silicon cast ingot Download PDFInfo
- Publication number
- CN105755531A CN105755531A CN201610158974.1A CN201610158974A CN105755531A CN 105755531 A CN105755531 A CN 105755531A CN 201610158974 A CN201610158974 A CN 201610158974A CN 105755531 A CN105755531 A CN 105755531A
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- Prior art keywords
- seed crystal
- crystal blocks
- blocks
- frame
- flat
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/14—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method characterised by the seed, e.g. its crystallographic orientation
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B28/00—Production of homogeneous polycrystalline material with defined structure
- C30B28/04—Production of homogeneous polycrystalline material with defined structure from liquids
- C30B28/06—Production of homogeneous polycrystalline material with defined structure from liquids by normal freezing or freezing under temperature gradient
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention relates to a seed crystal block applicable to a mono-like silicon cast ingot. The seed crystal block comprises a frame seed crystal block abutting against an inner wall on the periphery of a crucible and a plurality of flat-plate seed crystal blocks placed in an area defined by the frame seed crystal block, wherein splicing structures are arranged between every two adjacent flat-plate seed crystal blocks, and the frame seed crystal block comprises a bulge suitable to press upper surfaces of the flat-plate seed crystal blocks from the upper side. The frame seed crystal block comprises the bulge capable of pressing the flat-plate seed crystal blocks, so that the flat-plate seed crystal blocks are fixed and cannot shake after being placed into the crucible; the possibility of warping due to heating of the flat-plate seed crystal blocks is reduced under the extrusion effect of the frame seed crystal block, and the quality of mono-like cast ingot is guaranteed. Besides, by the aid of the frame seed crystal block, the flat-plate seed crystal blocks can be placed in the crucible in a manner closer to horizontal placement, the placed flat-plate seed crystal blocks can be kept horizontal, and a foundation is laid for improvement of the quality of the cast ingot.
Description
Technical field
The present invention relates to class monocrystalline silicon cast ingot seed crystal splicing construction, belong to silicon crystal and manufacture field.
Background technology
In recent years, silicon single crystal and polysilicon are widely used in the field such as photovoltaic solar cell, liquid crystal display.The conventional manufacture method of current class silicon single crystal is directional solidification method, and the method lays cuboid seed crystal, the regularly arranged formation inculating crystal layer of seed crystal in flat crucible bottom.Silicon material is placed in flat crucible, is layed on inculating crystal layer.Being controlled by the temperature of melting stage, after silicon material is melted, seed crystal starts to melt gradually from the face contacted with silicon liquid, realizes the oriented growth of silicon ingot on unfused seed crystal then through oriented heat dissipating, it is thus achieved that the crystal grain similar or the same with seed crystal.
Under the connecting method that cuboid seed crystal is regularly arranged, in the process of directional solidification method growth class monocrystalline, it is easily generated dislocation source, and then causes subsequent crystallographic dislocation multiplication, or form polycrystalline crystal boundary.Showing after deliberation, crystal boundary causes that monocrystalline area ratio declines, and dislocation causes that silicon chip forms substantial amounts of defect, and the photoelectric transformation efficiency of solaode reduces, service life shortens, thus affecting the performance of photovoltaic device.
For this, Chinese invention patent application CN103060892A discloses " a kind monocrystalline silicon cast ingot seed crystal joining method ", changes vertical Mosaic face traditional for seed crystal into Mosaic face with angle of inclination or radian.Adopt the tangential normal direction with flat crucible bottom plane of Mosaic face, the two misaligned seed crystal connecting method, reduce dislocation source by changing the shape of seed crystal, even reduce polycrystalline crystal boundary and produce, it is achieved full monocrystalline, the class crystal growth that dislocation source is few.And then decrease the dislocation defects of silicon chip, improve monocrystalline area ratio, improve the photoelectric transformation efficiency of solaode, extend the life-span of battery, thus improve the performance of photovoltaic device.
But inventor finds through experiment, said method is still at existing defects.Although inclined-plane splicing construction decreases the generation in gap to a certain extent, but make this seed crystal connecting method in seed crystal splicing and silicon material filling process owing to inclined-plane is smooth, it is likely to because pressure causes seed crystal splicing deformation, thus affecting follow-up monocrystalline ingot quality, the splicing of seed crystal is proposed significantly high technology requirement, process allowance degradation.Meanwhile, compact the seed crystal expanded by heating arranged in heating process, it is possible to tilting, the splicing gap between seed crystal can become big, causes subsequent crystallographic dislocation multiplication, or forms polycrystalline crystal boundary.
Summary of the invention
It is an object of the invention to: overcome the defect of above-mentioned prior art, it is proposed to a kind of seed crystal blocks suitable in class monocrystalline silicon cast ingot, its splicing is simple, and monocrystalline ingot quality is higher.
In order to achieve the above object, a kind of seed crystal blocks suitable in class monocrystalline silicon cast ingot that the present invention proposes, including: for leaning against the frame seed crystal blocks of crucible surrounding inwall, with be used for be placed on some flat board seed crystal blocks that described frame seed crystal blocks surrounds in region, having splicing construction between adjacent panels seed crystal blocks, described frame seed crystal blocks has the projection being suitable for pushing down flat board seed crystal blocks upper surface from above.
The present invention is further improved by:
1, described splicing construction is the one in notch, buckle structure, trapezium structure.
2, the lower end of described frame seed crystal blocks has tip, for inserting between the seed crystal fragment being layed in crucible bottom.
3, the top of described projection has the inclined-plane to crucible inner inclination, is used for guiding flat board seed crystal blocks to put underbump under above projection.
The technique that the present invention also proposes a kind monocrystalline silicon cast ingot, it is characterised in that step is as follows:
T1, at flat crucible bottom seed crystal fragment；
T2, frame seed crystal blocks insert seed crystal fragment along crucible surrounding inwall；
T3, the flat board seed crystal blocks entirety spliced is put into crucible, and decline along frame seed crystal blocks, make frame seed crystal blocks push down flat board seed crystal blocks；
T4, on seed crystal blocks lay silicon material；
T5, crucible is put into ingot furnace evacuation；
T6, being controlled by the temperature of melting stage, make that silicon material is melted penetrates into splicing gap, seed crystal starts to melt gradually from the face contacted with silicon liquid；
T7, it is oriented heat radiation, unfused seed crystal realizes the oriented growth of silicon ingot, it is thus achieved that class monocrystalline ingot casting.
In casting ingot process, the order putting into frame seed crystal blocks and flat board seed crystal blocks can be exchanged.That is:
Step T2 replaces with: the flat board seed crystal blocks entirety spliced is put into crucible, makes to leave uniform gap between flat board seed crystal blocks outward flange and crucible internal walls.
Step T3 replaces with: along crucible surrounding inwall, frame seed crystal blocks being inserted the gap between flat board seed crystal blocks outward flange and crucible internal walls, and pressure makes frame seed crystal blocks insert seed crystal fragment down, the projection of frame seed crystal blocks pushes down flat board seed crystal blocks.
The frame seed crystal blocks of the present invention has the projection that can push down flat board seed crystal blocks, therefore namely it is fixed after putting into crucible when flat board seed crystal blocks and can not rock, due to the squeezing action of frame seed crystal blocks, reduce flat board seed crystal blocks and be heated the possibility tilted, it is ensured that monocrystalline ingot quality.In addition, by frame seed crystal blocks, flat board seed crystal blocks can be positioned in crucible closer to level, this is because crucible bottom is difficult to ensure that absolute smooth, also flatness can be reduced after laying seed crystal fragment, and frame seed crystal blocks can play the effect of origin reference location, namely in frame seed crystal blocks on position situation accurately, namely the boss of frame seed crystal blocks defines " horizontal datum ", the flat board seed crystal blocks maintenance level put into can be accomplished by this " horizontal datum ", lay a good foundation for improving ingot quality.
Relative to tradition class monocrystalline silicon cast ingot technique, employing the seed crystal blocks of peculiar structure so that in ingot casting process in present invention process, Mosaic face gap can be well controlled, and improves monocrystalline area ratio；And the position-limiting action due to frame seed crystal blocks, it is prevented that seed crystal blocks is heated tilting, improves ingot quality.In addition；In casting ingot process of the present invention, seed crystal joining method is simple, and operator are easily mastered, and joining quality can be effectively ensured, so that class monocrystalline silicon cast ingot technique of the present invention can industrially realize, have stronger practical value.
Accompanying drawing explanation
Below in conjunction with accompanying drawing, the present invention is further illustrated.
Fig. 1 is seed crystal blocks of the present invention splicing schematic diagram.
Number in the figure is schematically as follows: 1-frame seed crystal blocks, 2-flat board seed crystal blocks.
Detailed description of the invention
Below in conjunction with the drawings and specific embodiments, the present invention will be further described.
As shown in Figure 1, the present invention is applicable to the seed crystal blocks of class monocrystalline silicon cast ingot, including: for leaning against the frame seed crystal blocks 1 of crucible surrounding inwall, with be used for be placed on some flat board seed crystal blocks 2 that described frame seed crystal blocks surrounds in region, having splicing construction between adjacent panels seed crystal blocks, frame seed crystal blocks 1 has the projection being suitable for pushing down flat board seed crystal blocks upper surface from above；The top of projection has the inclined-plane to crucible inner inclination, is used for guiding flat board seed crystal blocks to put underbump under above projection；The lower end of frame seed crystal blocks 1 has tip, for inserting between the seed crystal fragment being layed in crucible bottom.The splicing construction of flat board seed crystal blocks is the one in notch, buckle structure, trapezium structure.
Based on the technique of the class monocrystalline silicon cast ingot of this structure, step is as follows:
T1, at flat crucible bottom seed crystal fragment；
T2, frame seed crystal blocks insert seed crystal fragment along crucible surrounding inwall；
T3, the flat board seed crystal blocks entirety spliced is put into crucible, and decline along frame seed crystal blocks, make frame seed crystal blocks push down flat board seed crystal blocks；
T4, on seed crystal blocks lay silicon material；
T5, crucible is put into ingot furnace evacuation；
T6, being controlled by the temperature of melting stage, make that silicon material is melted penetrates into splicing gap, seed crystal starts to melt gradually from the face contacted with silicon liquid；
T7, it is oriented heat radiation, unfused seed crystal realizes the oriented growth of silicon ingot, it is thus achieved that class monocrystalline ingot casting.
In casting ingot process, the order putting into frame seed crystal blocks and flat board seed crystal blocks can be exchanged.That is:
Step T2 replaces with: the flat board seed crystal blocks entirety spliced is put into crucible, makes to leave uniform gap between flat board seed crystal blocks outward flange and crucible internal walls.
Step T3 replaces with: along crucible surrounding inwall, frame seed crystal blocks being inserted the gap between flat board seed crystal blocks outward flange and crucible internal walls, and pressure makes frame seed crystal blocks insert seed crystal fragment down, the projection of frame seed crystal blocks pushes down flat board seed crystal blocks.
In addition to the implementation, the present invention can also have other embodiments.All employings are equal to replacement or the technical scheme of equivalent transformation formation, all fall within the protection domain of application claims.
Claims (4)
1. the seed crystal blocks being applicable to class monocrystalline silicon cast ingot, it is characterized in that including: for leaning against the frame seed crystal blocks of crucible surrounding inwall, with be used for be placed on some flat board seed crystal blocks that described frame seed crystal blocks surrounds in region, having splicing construction between adjacent panels seed crystal blocks, described frame seed crystal blocks has the projection being suitable for pushing down flat board seed crystal blocks upper surface from above.
2. the seed crystal blocks suitable in class monocrystalline silicon cast ingot according to claim 1, it is characterised in that: described splicing construction is the one in notch, buckle structure, trapezium structure.
3. the seed crystal blocks suitable in class monocrystalline silicon cast ingot according to claim 1, it is characterised in that: the lower end of described frame seed crystal blocks has tip, for inserting between the seed crystal fragment being layed in crucible bottom.
4. the seed crystal blocks suitable in class monocrystalline silicon cast ingot according to claim 1, it is characterised in that: the top of described projection has the inclined-plane to crucible inner inclination, is used for guiding flat board seed crystal blocks to put underbump under above projection.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610158974.1A CN105755531B (en) | 2016-03-18 | 2016-03-18 | A kind of seed crystal blocks suitable for class monocrystalline silicon cast ingot |
| DE212016000213.9U DE212016000213U1 (en) | 2016-03-18 | 2016-09-12 | Seed crystal block for a quasi-single crystal silicon ingot |
| PCT/CN2016/098669 WO2017156989A1 (en) | 2016-03-18 | 2016-09-12 | Seed crystal block applicable to monocrystal silicon-like cast ingot |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610158974.1A CN105755531B (en) | 2016-03-18 | 2016-03-18 | A kind of seed crystal blocks suitable for class monocrystalline silicon cast ingot |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105755531A true CN105755531A (en) | 2016-07-13 |
| CN105755531B CN105755531B (en) | 2018-03-23 |
Family
ID=56345331
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610158974.1A Expired - Fee Related CN105755531B (en) | 2016-03-18 | 2016-03-18 | A kind of seed crystal blocks suitable for class monocrystalline silicon cast ingot |
Country Status (3)
| Country | Link |
|---|---|
| CN (1) | CN105755531B (en) |
| DE (1) | DE212016000213U1 (en) |
| WO (1) | WO2017156989A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2017156989A1 (en) * | 2016-03-18 | 2017-09-21 | 南通大学 | Seed crystal block applicable to monocrystal silicon-like cast ingot |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11236291A (en) * | 1998-02-25 | 1999-08-31 | Mitsubishi Materials Corp | Crucible for producing silicon ingot having unidirectionally solidified polycrystalline structure |
| CN202265623U (en) * | 2011-06-27 | 2012-06-06 | 光为绿色新能源股份有限公司 | Crucible for polycrystalline ingot furnace to cast mono-like crystalline silicon |
| CN103060892A (en) * | 2012-12-26 | 2013-04-24 | 江西赛维Ldk太阳能高科技有限公司 | Seed crystal splicing method used for monocrystal-like silicone cast ingot |
| CN103952756A (en) * | 2014-05-08 | 2014-07-30 | 江西赛维Ldk太阳能高科技有限公司 | Bonding and splicing method of seed crystals for monocrystal silicon-like cast ingots and crucible for casting ingot |
| CN104131332A (en) * | 2014-08-06 | 2014-11-05 | 江西赛维Ldk太阳能高科技有限公司 | Paving method of seed crystals, pseudo-single crystal silicon wafer and preparation method of pseudo-single crystal silicon wafer |
| CN104775156A (en) * | 2015-04-15 | 2015-07-15 | 南通大学 | Seed crystal splicing structure suitable for directional solidification ingot casting |
| CN104775148A (en) * | 2015-04-15 | 2015-07-15 | 南通大学 | Seed crystal splicing method for monocrystalline-like silicon cast ingot |
| CN104831343A (en) * | 2015-04-15 | 2015-08-12 | 南通大学 | Seed crystal splicing structure for ingot casting |
| CN105316758A (en) * | 2015-11-11 | 2016-02-10 | 常州天合光能有限公司 | Seed crystal laying method and single crystal growth method through ingotting |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104818521A (en) * | 2015-04-15 | 2015-08-05 | 南通大学 | Seed crystal splicing structure for like single crystal silicon cast ingot |
| CN105603508B (en) * | 2016-03-18 | 2018-03-30 | 南通大学 | A kind of seed crystal splicing construction suitable for class monocrystalline silicon cast ingot |
| CN105755531B (en) * | 2016-03-18 | 2018-03-23 | 南通大学 | A kind of seed crystal blocks suitable for class monocrystalline silicon cast ingot |
| CN105603509B (en) * | 2016-03-18 | 2018-03-30 | 南通大学 | A kind of class monocrystalline silicon production technique based on directional solidification ingot casting |
| CN105586632B (en) * | 2016-03-18 | 2018-03-30 | 南通大学 | One species monocrystalline silicon cast ingot technique |
-
2016
- 2016-03-18 CN CN201610158974.1A patent/CN105755531B/en not_active Expired - Fee Related
- 2016-09-12 WO PCT/CN2016/098669 patent/WO2017156989A1/en active Application Filing
- 2016-09-12 DE DE212016000213.9U patent/DE212016000213U1/en not_active Expired - Lifetime
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11236291A (en) * | 1998-02-25 | 1999-08-31 | Mitsubishi Materials Corp | Crucible for producing silicon ingot having unidirectionally solidified polycrystalline structure |
| CN202265623U (en) * | 2011-06-27 | 2012-06-06 | 光为绿色新能源股份有限公司 | Crucible for polycrystalline ingot furnace to cast mono-like crystalline silicon |
| CN103060892A (en) * | 2012-12-26 | 2013-04-24 | 江西赛维Ldk太阳能高科技有限公司 | Seed crystal splicing method used for monocrystal-like silicone cast ingot |
| CN103952756A (en) * | 2014-05-08 | 2014-07-30 | 江西赛维Ldk太阳能高科技有限公司 | Bonding and splicing method of seed crystals for monocrystal silicon-like cast ingots and crucible for casting ingot |
| CN104131332A (en) * | 2014-08-06 | 2014-11-05 | 江西赛维Ldk太阳能高科技有限公司 | Paving method of seed crystals, pseudo-single crystal silicon wafer and preparation method of pseudo-single crystal silicon wafer |
| CN104775156A (en) * | 2015-04-15 | 2015-07-15 | 南通大学 | Seed crystal splicing structure suitable for directional solidification ingot casting |
| CN104775148A (en) * | 2015-04-15 | 2015-07-15 | 南通大学 | Seed crystal splicing method for monocrystalline-like silicon cast ingot |
| CN104831343A (en) * | 2015-04-15 | 2015-08-12 | 南通大学 | Seed crystal splicing structure for ingot casting |
| CN105316758A (en) * | 2015-11-11 | 2016-02-10 | 常州天合光能有限公司 | Seed crystal laying method and single crystal growth method through ingotting |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2017156989A1 (en) * | 2016-03-18 | 2017-09-21 | 南通大学 | Seed crystal block applicable to monocrystal silicon-like cast ingot |
Also Published As
| Publication number | Publication date |
|---|---|
| DE212016000213U1 (en) | 2018-06-06 |
| WO2017156989A1 (en) | 2017-09-21 |
| CN105755531B (en) | 2018-03-23 |
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Inventor after: Wang Qiang Inventor after: Wu Tingxi Inventor after: Song Shuaidi Inventor after: Deng Jie Inventor after: Chen Yun Inventor after: Zhao Youfei Inventor after: Zhang Xiaobing Inventor before: Wang Qiang Inventor before: Zhou Haifeng Inventor before: Deng Jie Inventor before: Zhao Youfei Inventor before: Zhang Xiaobing |
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