CN105705594A - 铜粒分散液和使用该铜粒分散液的导电膜的制造方法 - Google Patents
铜粒分散液和使用该铜粒分散液的导电膜的制造方法 Download PDFInfo
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- CN105705594A CN105705594A CN201480060662.6A CN201480060662A CN105705594A CN 105705594 A CN105705594 A CN 105705594A CN 201480060662 A CN201480060662 A CN 201480060662A CN 105705594 A CN105705594 A CN 105705594A
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- dispersion liquid
- copper
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 78
- 239000010949 copper Substances 0.000 title claims abstract description 68
- 229910052802 copper Inorganic materials 0.000 title claims abstract description 68
- 238000004519 manufacturing process Methods 0.000 title claims description 22
- 239000006185 dispersion Substances 0.000 title abstract description 18
- 239000002245 particle Substances 0.000 title abstract description 11
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims abstract description 33
- 239000012964 benzotriazole Substances 0.000 claims abstract description 29
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 claims abstract description 28
- 238000007639 printing Methods 0.000 claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 238000001291 vacuum drying Methods 0.000 claims abstract description 8
- 238000007650 screen-printing Methods 0.000 claims abstract description 7
- 239000007788 liquid Substances 0.000 claims description 93
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 77
- 238000000034 method Methods 0.000 claims description 42
- 239000004531 microgranule Substances 0.000 claims description 36
- 239000011248 coating agent Substances 0.000 claims description 10
- 238000000576 coating method Methods 0.000 claims description 10
- 150000003851 azoles Chemical class 0.000 claims description 9
- 238000005286 illumination Methods 0.000 claims description 8
- KAESVJOAVNADME-UHFFFAOYSA-N 1H-pyrrole Natural products C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 abstract description 2
- -1 azole compound Chemical class 0.000 abstract description 2
- 239000002612 dispersion medium Substances 0.000 abstract 1
- 238000009413 insulation Methods 0.000 description 40
- 239000000243 solution Substances 0.000 description 17
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 14
- 238000005345 coagulation Methods 0.000 description 14
- 230000015271 coagulation Effects 0.000 description 14
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 11
- 239000011231 conductive filler Substances 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 9
- 229910052757 nitrogen Inorganic materials 0.000 description 7
- 239000000843 powder Substances 0.000 description 6
- 238000002835 absorbance Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000003860 storage Methods 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 229910052724 xenon Inorganic materials 0.000 description 4
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 239000002270 dispersing agent Substances 0.000 description 3
- 239000002105 nanoparticle Substances 0.000 description 3
- 239000011164 primary particle Substances 0.000 description 3
- 238000003756 stirring Methods 0.000 description 3
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- NWZSZGALRFJKBT-KNIFDHDWSA-N (2s)-2,6-diaminohexanoic acid;(2s)-2-hydroxybutanedioic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O.NCCCC[C@H](N)C(O)=O NWZSZGALRFJKBT-KNIFDHDWSA-N 0.000 description 1
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 150000001565 benzotriazoles Chemical class 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 150000001879 copper Chemical class 0.000 description 1
- JZCCFEFSEZPSOG-UHFFFAOYSA-L copper(II) sulfate pentahydrate Chemical compound O.O.O.O.O.[Cu+2].[O-]S([O-])(=O)=O JZCCFEFSEZPSOG-UHFFFAOYSA-L 0.000 description 1
- 239000013530 defoamer Substances 0.000 description 1
- 239000000839 emulsion Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000349 field-emission scanning electron micrograph Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- IKDUDTNKRLTJSI-UHFFFAOYSA-N hydrazine monohydrate Substances O.NN IKDUDTNKRLTJSI-UHFFFAOYSA-N 0.000 description 1
- 239000010954 inorganic particle Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 235000011121 sodium hydroxide Nutrition 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- RBNWAMSGVWEHFP-UHFFFAOYSA-N trans-p-Menthane-1,8-diol Chemical compound CC(C)(O)C1CCC(C)(O)CC1 RBNWAMSGVWEHFP-UHFFFAOYSA-N 0.000 description 1
- ZIBGPFATKBEMQZ-UHFFFAOYSA-N triethylene glycol Chemical compound OCCOCCOCCO ZIBGPFATKBEMQZ-UHFFFAOYSA-N 0.000 description 1
- 238000002604 ultrasonography Methods 0.000 description 1
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Abstract
将被苯并三唑等唑化合物被覆的平均粒径为1~100nm的铜微粒和平均粒径为0.3~20μm的铜粗粒,以使铜微粒和铜粗粒的总量为50~90质量%、质量的比例为1:9~5:5的条件分散于乙二醇等分散介质中,得到铜粒分散液,将所得到的铜粒分散液通过丝网印刷或柔版印刷涂布于基板上,通过真空干燥进行预烧成后,通过以100~3000μs的脉冲周期、1600~3600V的脉冲电压照射波长为200~800nm的光来进行光的照射而烧成,藉此在基板上形成导电膜。
Description
技术领域
本发明涉及铜粒分散液,尤其涉及形成电子元器件的电极或电路等的导电膜的制造中所使用的铜粒分散液、以及使用该铜粒分散液的导电膜的制造方法。
背景技术
迄今,作为使用铜粒分散液来制造导电膜的方法,提出了将含有玻璃微粒等无机微粒、感光性有机成分和具有苯并三唑等唑结构的化合物的感光性糊料涂布于基板上,曝光后显影,然后进行烧成,从而形成(导电膜的)图案的方法(例如,参照日本专利特开平9-218508号公报)。
还提出了将含有铜纳米粒的铜油墨溶液(铜粒分散液)印刷于基板表面后使其干燥,然后通过将其暴露于脉冲下而对铜纳米粒进行光烧结来使其融合,以制造光烧结铜纳米粒膜(导电膜)的方法(例如,参照日本专利特表2010-528428号公报)。
另外,作为铜粒分散液,提出了将作为耐氧化性处理使苯并三唑被覆于表面的铜微粒作为导电填料使用的导电油墨(例如,参照日本专利特开2008-285761号公报)。
然而,在日本专利特开平9-218508号公报所记载的方法中,由于需要在将感光性糊料涂布于基板上、曝光后使用显影液来显影,然后在高温(520~610℃)下进行烧成,因此其工序繁杂,无法通过光照射来烧成,还无法在纸膜或PET(聚对苯二甲酸乙二醇酯)膜等不耐热的基板上形成图案。另外,在日本专利特表2010-528428号公报所记载的方法中,含有铜纳米粒的铜油墨溶液(铜粒分散液)的保存稳定性不足。另外,如果将日本专利特开2008-285761号公报所记载的导电油墨作为光烧成用的铜粒分散液来使用,则在将其涂布于基板上后干燥、然后通过光照射而烧成以形成导电膜之际,会在导电膜上产生裂纹,导电性变差。
发明内容
所以,本发明鉴于上述以往的问题,其目的在于提供保存稳定性良好且可通过光烧成形成导电性良好的导电膜的铜粒分散液以及使用该铜粒分散液的导电膜的制造方法。
本发明人为了解决上述技术问题而进行了深入研究,发现通过将被唑化合物被覆的平均粒径为1~100nm的铜微粒和平均粒径为0.3~20μm的铜粗粒分散于分散介质中,能够提供保存稳定性良好且可通过光烧成形成导电性良好的导电膜的铜粒分散液以及使用该铜粒分散液的导电膜的制造方法,从而完成了本发明。
即,本发明的铜粒分散液的特征在于,被唑化合物被覆的平均粒径为1~100nm的铜微粒和平均粒径为0.3~20μm的铜粗粒分散于分散介质中。该铜粒分散液中,铜微粒和铜粗粒的总量优选为50~90质量%,铜微粒的质量与铜粗粒的质量的比例优选为1:9~5:5。另外,唑化合物优选为苯并三唑,分散介质优选为乙二醇。
另外,本发明的导电膜的制造方法的特征在于,通过将上述铜粒分散液涂布于基板上后进行预烧成,然后进行光的照射而烧成,藉此在基板上形成导电膜。该导电膜的制造方法中,铜粒分散液的涂布优选通过丝网印刷或柔版印刷来进行,预烧成优选通过在50~150℃下真空干燥来进行。另外,光的照射优选通过以100~3000μs的脉冲周期、1600~3600V的脉冲电压脉冲照射波长为200~800nm的光来进行,导电膜的厚度优选为1~30μm。
通过本发明,能够提供保存稳定性良好且可通过光烧成形成导电性良好的导电膜的铜粒分散液以及使用该铜粒分散液的导电膜的制造方法。
附图的简要说明
图1是显示实施例1和比较例1的铜微粒的分散液的吸光度的图。
具体实施方式
本发明的铜粒分散液的实施方式中,被唑化合物被覆的平均粒径为1~100nm的铜微粒和平均粒径为0.3~20μm的铜粗粒分散于分散介质中。
平均粒径为1~100nm的铜微粒是容易烧结的粒子,通过利用唑化合物对表面进行被覆,在提高保存稳定性的同时,还提高了光的吸收性,更易通过光照射来烧结。特别是,唑化合物由于在分子内存在共轭双键,因此通过吸收紫外线波长范围(200~400nm)内的光而将其转化为热量,使得铜微粒容易烧结。
另外,平均粒径为0.3~20μm的铜粗粒在通过光照射进行烧成来形成导电膜时防止导电膜上产生裂纹而使导电性变差,并且即使导电膜变厚也能抑制导电性变差。
该铜粒分散液中,铜微粒和铜粗粒的总量优选为50~90质量%,进一步优选为60~80质量%。另外,铜微粒的质量与铜粗粒的质量的比例优选为1:9~5:5。另外,唑化合物优选为苯并三唑。另外,作为分散介质,可使用萜品醇、丁基卡必醇乙酸酯(BCA)、乙二醇、二甘醇、三甘醇等,优选使用乙二醇。
另外,本发明的导电膜的制造方法的实施方式中,通过将上述铜粒分散液涂布于基板上后进行预烧成,然后进行光的照射而烧成,藉此在基板上形成导电膜。
该导电膜的制造方法中,铜粒分散液的涂布优选通过丝网印刷或柔版印刷来进行。为了将铜粒分散液通过这样的印刷来进行良好的涂布,还可以向铜粒分散液中添加树脂来调整粘度。另外,预烧成优选通过在50~150℃下真空干燥来进行。另外,光的照射优选通过以100~3000μs的脉冲周期、1600~3600V的脉冲电压照射波长为200~800nm的光来进行。该光照射可通过利用脉冲氙灯等照射光来进行,也可在大气中以短时间进行,还可进行多次。通过该光照射,能够形成厚度为1~30μm且导电性良好的导电膜。
另外,本说明书中,所谓“平均粒径”是指由场发射型扫描电子显微镜(FE-SEM)算出的平均一次粒径。该“平均一次粒径”可通过例如以下方法算出:利用场发射型扫描电子显微镜(FE-SEM)(日立制作所株式会社(株式会社日立製作所)生产的S-4700)以规定的倍率(铜微粒的场合为10万倍,铜粗粒的场合根据形状或大小为2千倍~2万倍(薄片状铜粗粒的场合为2千倍,平均粒子为3.0μm的球状铜粗粒的场合为5千倍,平均粒径为0.5μm的球状铜粗粒的场合为2万倍))对铜微粒或铜粗粒进行观察,随机选取该FE-SEM图像(根据需要可为多幅图像)上任意100个铜微粒或铜粗粒,测量这些粒子(一次粒子)的粒径(图像上的长径),取它们的个数的平均值(作为个数平均径)。
下面,对本发明的铜粒分散液以及使用该铜粒分散液的导电膜的制造方法的实施例进行详细说明。
实施例
实施例1
首先,准备溶液A、溶液B和溶液C,溶液A是将280g作为铜源的五水合硫酸铜、1g作为分散剂的苯并三唑(BTA)和1g水系消泡剂(第一工业制药株式会社(第一工業製薬株式会社)生产的ANTI-FROTHF-244(アンチフロスF-244))溶解于1330g水中而得到的溶液;溶液B是用900g水对200g作为中和剂的50质量%的苛性钠水溶液进行稀释而得到的溶液;溶液C是用1300g水对150g作为还原剂的80质量%的肼水合物进行稀释而得到的溶液。
接着,边搅拌边混合溶液A和溶液B,调整至60℃的温度后,在保持搅拌搅拌的状态下,将溶液C在30秒内全部添加至该混合溶液中,经过5分钟左右,反应结束。使乙二醇流过反应中生成的浆料经固液分离而得到的固体组分,得到了BTA被覆铜微粒分散在乙二醇中的分散液。利用场发射型扫描电子显微镜(FE-SEM)(日立制作所株式会社生产的S-4700)对该分散液中的铜微粒进行观察,结果是铜微粒为(被BTA被覆的)大致球形的微粒,算出的平均粒径为大约50nm。另外,通过该分散液的N2中的示差分析来求得分散液中的铜含量,结果为68质量%。
向该BTA被覆铜微粒粉的分散液中(以使薄片状铜粉与BTA被覆铜微粒粉的质量的比例达到3:7的条件)添加平均粒径为12μm的薄片状铜粉,得到了含有作为导电填料的BTA被覆铜微粉(填料1)和薄片状铜粉(填料2)的铜粒分散液。另外,以使该铜微粒分散液中的导电填料达到67质量%的条件添加乙二醇进行调整。
然后,使用丝网版(SONOCOM株式会社(株式会社ソノコム)生产的目数为500LPI、线径为18μm、丝网厚度为29μm、乳剂厚度为5μm的丝网版),以50mm×0.5mm的大致矩形向基材(柯达公司(Kodak社)生产的喷墨纸)上丝网印刷上述铜粒分散液,印刷次数为1次,作为预烧成在100℃下进行60分钟的真空干燥后,使用脉冲照射装置(Xenon公司(Xenon社)生产的Sinteron2000),以2000μs的脉冲周期、2000V的脉冲电压利用脉冲氙灯照射波长为200~800nm的光,从而得到了导电膜。通过使用激光显微镜(KEYENCE株式会社(株式会社キーエンス)生产的VK-9700)对形成有导电膜的基材的表面与导电膜表面之间的高低差进行100处测量并计算出平均值来求得该导电膜的膜厚,结果是导电膜的膜厚为7.0μm。另外,利用测试仪(CUSTOM公司(CUSTOM社)生产的CDM-03D型)对该导电膜的电阻(线电阻)进行测量,结果为9.8Ω。另外,通过导电膜的膜厚、电阻和面积求得该导电膜的体积电阻率,结果为69μΩ·cm。
另外,使用柔版印刷版,以140mm×5mm的大致矩形在基材(柯达公司生产的喷墨纸)上柔版印刷上述铜粒分散液,网纹容量为20cc/m2,印刷次数为1次,作为预烧成在50℃下进行60分钟的真空干燥后,使用上述脉冲照射装置,以2000μs的脉冲周期、2000V的脉冲电压进行光照射而烧成,从而得到导电膜。利用与上述方法相同的方法求得该导电膜的膜厚,结果为2μm,利用上述的测试仪对电阻(线电阻)进行测量,结果为1.7Ω。另外,通过导电膜的膜厚、电阻和面积求得该导电膜的体积电阻率,结果为12μΩ·cm。
另外,使用柔版印刷版,以140mm×5mm的大致矩形在基材(柯达公司生产的喷墨纸)上柔版印刷上述铜粒分散液,网纹容量为20cc/m2,印刷次数为2次,作为预烧成在50℃下进行60分钟的真空干燥后,使用上述脉冲照射装置,以2000μs的脉冲周期、2000V的脉冲电压进行光照射而烧成,从而得到导电膜。利用与上述方法相同的方法求得该导电膜的膜厚,结果为4μm,利用上述的测试仪对电阻(线电阻)进行测量,结果为1.0Ω。另外,通过导电膜的膜厚、电阻和面积求得该导电膜的体积电阻率,结果为14μΩ·cm。
另外,使用柔版印刷版,以140mm×5mm的大致矩形在基材(柯达公司生产的喷墨纸)上柔版印刷上述铜粒分散液,网纹容量为20cc/m2,印刷次数为3次,作为预烧成在50℃下进行60分钟的真空干燥后,使用上述脉冲照射装置,以2000μs的脉冲周期、2000V的脉冲电压进行光照射而烧成,从而得到导电膜。利用与上述方法相同的方法求得该导电膜的膜厚,结果为6μm,利用上述的测试仪对电阻(线电阻)进行测量,结果为0.6Ω。另外,通过导电膜的膜厚、电阻和面积求得该导电膜的体积电阻率,结果为13μΩ·cm。
另外,将通过该实施例得到的铜粒分散液在室温下于氮气中静置一个月,通过目视来确认有无凝集,结果未发现凝集。另外,使用按这样静置一个月后的铜粒分散液,通过与上述方法相同的方法来制作导电膜,结果其电阻和体积电阻率几乎没有变化。
比较例1
除了溶液A不含作为分散剂的苯并三唑(BTA)以外,通过与实施例1相同的方法来得到铜粒分散液(导电填料:67质量%)。另外,利用场发射型扫描电子显微镜(FE-SEM)(日立制作所株式会社生产的S-4700)对该分散液中的铜微粒进行观察,结果是铜微粒为大致球形的微粒,算出的平均粒径为大约50nm。
使用该铜粒分散液,通过与实施例1相同的方法来制作导电膜、测量其电阻(线电阻),并且求得膜厚和体积电阻率。其结果是,对铜粒分散液进行丝网印刷所得到的导电膜的电阻(线电阻)为54Ω,膜厚为7.0μm,体积电阻率为378μΩ·cm。另外,对铜粒分散液进行柔版印刷所得到的导电膜在厚度为2μm和4μm的场合下,电阻(线电阻)由于过载(OL)而无法测量,从而无法求得体积电阻率,在厚度为6μm的场合下,电阻(线电阻)为20.6Ω,体积电阻率为441μΩ·cm。
另外,将由该比较例得到的铜粒分散液在室温下于氮气中静置一个月,通过目视来确认有无凝集,结果发现了由于氧化而发生的变色和凝集。
比较例2
除了溶液A不含作为分散剂的苯并三唑(BTA)以外,通过与实施例1相同的方法来得到导电填料的分散液,向该分散液中以达到相对于该分散液中的铜微粒为2质量%的条件添加苯并三唑(BTA),得到含有BTA的铜粒分散液(导电填料:67质量%)。另外,利用场发射型扫描电子显微镜(FE-SEM)(日立制作所株式会社生产的S-4700)对该分散液中的铜微粒进行观察,结果为大致球形的微粒,算出的平均粒径为大约50nm。
使用该铜粒分散液,通过与实施例1相同的方法来制作导电膜、测量其电阻(线电阻),并且求得膜厚和体积电阻率。结果是,对铜粒分散液进行丝网印刷所得到的导电膜的电阻(线电阻)为19.2Ω,膜厚为7.0μm,体积电阻率为134μΩ·cm。另外,对铜粒分散液进行柔版印刷所得到的导电膜在厚度为2μm和4μm的场合下,电阻(线电阻)由于过载(OL)而无法测量,从而无法求得体积电阻率,在厚度为6μm的场合下,电阻(线电阻)为21.7Ω,体积电阻率为465μΩ·cm。
另外,将由该比较例得到的铜粒分散液在室温下于氮气中静置一个月,通过目视来确认有无凝集,结果发现了由于氧化而发生的变色和凝集。
实施例2
除了使BTA被覆铜微粒粉与薄片状铜粉的质量的比例为5:5以外,通过与实施例1相同的方法来得到铜粒分散液(导电填料:67质量%)。
使用该铜粒分散液,通过与实施例1相同的方法来进行柔版印刷而制作导电膜、测量其电阻(线电阻),并且求得体积电阻率。其结果是,在厚度为2μm的场合下,电阻(线电阻)为1.5Ω,体积电阻率为11μΩ·cm,在厚度为4μm的场合下,电阻(线电阻)为1.2Ω,体积电阻率为17μΩ·cm,在厚度为6μm的场合下,电阻(线电阻)为1.3Ω,体积电阻率为28μΩ·cm。
另外,将由该实施例得到的铜粒分散液在室温下于氮气中静置一个月,通过目视来确认有无凝集,结果未发现凝集。另外,使用按这样静置一个月后的铜粒分散液,通过与上述方法相同的方法来制作导电膜,结果其电阻和体积电阻率几乎没有变化。
实施例3~5
除了使用平均粒径为0.5μm的球状铜粉代替薄片状铜粉并使BTA被覆铜微粒粉的质量与球状铜粉的质量的比例分别为1:9(实施例3)、3:7(实施例4)、5:5(实施例5)以外,通过与实施例1相同的方法得到了铜粒分散液(导电填料:67质量%)。
使用这些铜粒分散液,通过与实施例1相同的方法来进行柔版印刷而制作导电膜、测量其电阻(线电阻),并且求得体积电阻率。结果是,使用实施例3的铜粒分散液所得到的导电膜在厚度为2μm的场合下,电阻(线电阻)为8.1Ω,体积电阻率为58μΩ·cm,在厚度为4μm的场合下,电阻(线电阻)为6.9Ω,体积电阻率为99μΩ·cm,在厚度为6μm的场合下,电阻(线电阻)为3.3Ω,体积电阻率为71μΩ·cm。另外,使用实施例4的铜粒分散液所得到的导电膜在厚度为2μm的场合下,电阻(线电阻)为9.4Ω,体积电阻率为67μΩ·cm,在厚度为4μm的场合下,电阻(线电阻)为5.1Ω,体积电阻率为73μΩ·cm,在厚度为6μm的场合下,电阻(线电阻)为3.3Ω,体积电阻率为71μΩ·cm。另外,使用实施例5的铜粒分散液所得到的导电膜在厚度为2μm的场合下,电阻(线电阻)为2.6Ω,体积电阻率为19μΩ·cm,在厚度为4μm的场合下,电阻(线电阻)为1.9Ω,体积电阻率为27μΩ·cm,在厚度为6μm的场合下,电阻(线电阻)为1.4Ω,体积电阻率为30μΩ·cm。
另外,将通过这些实施例得到的铜粒分散液在室温下于氮气中静置一个月,通过目视来确认有无凝集,结果未发现凝集。另外,使用按这样静置一个月后的铜粒分散液,通过与上述方法相同的方法来制作导电膜,结果其电阻和体积电阻率几乎没有变化。
实施例6~7
除了使用平均粒径为3.0μm的球状铜粉代替薄片状铜粉、使BTA被覆铜微粒粉的质量与球状铜粉的质量的比例分别为3:7(实施例6)、5:5(实施例7)以外,通过与实施例1相同的方法得到了铜粒分散液(导电填料:67质量%)。
使用这些铜粒分散液,通过与实施例1相同的方法来进行柔版印刷而制作导电膜、测量其电阻(线电阻),并且求得体积电阻率。结果是,使用实施例6的铜粒分散液所得到的导电膜在厚度为2μm的场合下,电阻(线电阻)为3.1Ω,体积电阻率为22μΩ·cm,在厚度为4μm的场合下,电阻(线电阻)为1.4Ω,体积电阻率为20μΩ·cm,在厚度为6μm的场合下,电阻(线电阻)为1.2Ω,体积电阻率为26μΩ·cm。另外,使用实施例7的铜粒分散液所得到的导电膜在厚度为2μm的场合下,电阻(线电阻)为4.0Ω,体积电阻率为29μΩ·cm,在厚度为4μm的场合下,电阻(线电阻)为2.8Ω,体积电阻率为40μΩ·cm,在厚度为6μm的场合下,电阻(线电阻)为3.6Ω,体积电阻率为77μΩ·cm。
另外,将通过这些实施例得到的铜粒分散液在室温下于氮气中静置一个月,通过目视来确认有无凝集,结果未发现凝集。另外,使用按这样静置一个月后的铜粒分散液,通过与上述方法相同的方法来制作导电膜,结果是其电阻和体积电阻率几乎没有变化。
比较例3
除了未使用薄片状铜粉以外,通过与实施例1相同的方法得到了铜粒分散液(导电填料:67质量%)。
使用该铜粒分散液,通过与实施例1相同的方法来进行柔版印刷而制作导电膜、测量其电阻(线电阻),并且求得体积电阻率。结果是,在厚度为4μm的场合下,电阻(线电阻)为82.0Ω,体积电阻率为11.71μΩ·cm,在厚度为6μm的场合下,电阻(线电阻)由于过载(OL)而无法测量,从而无法求得体积电阻率。
另外,将通过该实施例得到的铜粒分散液在室温下于氮气中静置一个月,通过目视来确认有无凝集,结果未发现凝集。
这些实施例和比较例的铜粒分散液的制造条件和使用该铜粒分散液所制得的导电膜的线电阻以及体积电阻示于表1~表3。
表1
表2
表3
另外,向实施例1的(被BTA被覆的)铜微粒和比较例1的(未被BTA被覆的)铜微粒中分别添加0.05质量%左右的乙二醇(EG)后利用超声波使其分散而得到分散液,利用紫外可见光分光光度计(岛津制作所株式会社(株式会社島津製作所)生产的UV-1800)对这些分散液测得的250~1100nm的波长范围内的吸光度(Abs)示于图1。从图1可知,BTA溶解于EG而得的溶液由于存在吸收紫外线区域的共轭双键因此波长300nm以下的吸光度升高,实施例1的(被BTA被覆的)铜微粒的分散液也由于被覆铜微粒的BTA因此波长300nm以下的吸光度升高,但是比较例1的(未被BTA被覆的)铜微粒的分散液的波长300nm以下的吸光度却未升高。
如果使用由本发明的铜粒分散液制造而成的导电膜形成IC标签用天线等RFID标签用天线,安装该RFID标签用天线来制造(由IC标签和天线构成的)嵌体,则能够制造具有实用通信距离的IC标签等RFID标签。
Claims (10)
1.一种铜粒分散液,其特征在于,被唑化合物被覆的平均粒径为1~100nm的铜微粒和平均粒径为0.3~20μm的铜粗粒分散于分散介质中。
2.如权利要求1所述的铜粒分散液,其特征在于,所述铜粒分散液中的所述铜微粒和所述铜粗粒的总量为50~90质量%。
3.如权利要求1所述的铜粒分散液,其特征在于,所述铜粒分散液中的所述铜微粒的质量与所述铜粗粒的质量的比例为1:9~5:5。
4.如权利要求1所述的铜粒分散液,其特征在于,所述唑化合物为苯并三唑。
5.如权利要求1所述的铜粒分散液,其特征在于,所述分散介质为乙二醇。
6.一种导电膜的制造方法,其特征在于,通过将权利要求1~5中任一项所述的铜粒分散液涂布于基板上后进行预烧成,然后进行光的照射而烧成,藉此在基板上形成导电膜。
7.如权利要求6所述的导电膜的制造方法,其特征在于,所述铜粒分散液的涂布通过丝网印刷或柔版印刷来进行。
8.如权利要求6所述的导电膜的制造方法,其特征在于,所述预烧成通过在50~150℃下真空干燥来进行。
9.如权利要求6所述的导电膜的制造方法,其特征在于,所述光的照射通过以100~3000μs的脉冲周期、1600~3600V的脉冲电压照射波长为200~800nm的光来进行。
10.如权利要求6所述的导电膜的制造方法,其特征在于,所述导电膜的厚度为1~30μm。
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Families Citing this family (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9112003B2 (en) | 2011-12-09 | 2015-08-18 | Asm International N.V. | Selective formation of metallic films on metallic surfaces |
JP2015133317A (ja) * | 2013-12-10 | 2015-07-23 | Dowaエレクトロニクス株式会社 | 導電性ペーストおよびそれを用いた導電膜の製造方法 |
US9895715B2 (en) | 2014-02-04 | 2018-02-20 | Asm Ip Holding B.V. | Selective deposition of metals, metal oxides, and dielectrics |
US10047435B2 (en) | 2014-04-16 | 2018-08-14 | Asm Ip Holding B.V. | Dual selective deposition |
US9490145B2 (en) * | 2015-02-23 | 2016-11-08 | Asm Ip Holding B.V. | Removal of surface passivation |
EP3317724B1 (en) * | 2015-07-03 | 2022-10-26 | National Research Council of Canada | Self-aligning metal patterning based on photonic sintering of metal nanoparticles |
US10428421B2 (en) | 2015-08-03 | 2019-10-01 | Asm Ip Holding B.V. | Selective deposition on metal or metallic surfaces relative to dielectric surfaces |
US10566185B2 (en) | 2015-08-05 | 2020-02-18 | Asm Ip Holding B.V. | Selective deposition of aluminum and nitrogen containing material |
US10121699B2 (en) | 2015-08-05 | 2018-11-06 | Asm Ip Holding B.V. | Selective deposition of aluminum and nitrogen containing material |
US10814349B2 (en) | 2015-10-09 | 2020-10-27 | Asm Ip Holding B.V. | Vapor phase deposition of organic films |
US10695794B2 (en) | 2015-10-09 | 2020-06-30 | Asm Ip Holding B.V. | Vapor phase deposition of organic films |
US11081342B2 (en) | 2016-05-05 | 2021-08-03 | Asm Ip Holding B.V. | Selective deposition using hydrophobic precursors |
US10453701B2 (en) | 2016-06-01 | 2019-10-22 | Asm Ip Holding B.V. | Deposition of organic films |
US10373820B2 (en) | 2016-06-01 | 2019-08-06 | Asm Ip Holding B.V. | Deposition of organic films |
US9803277B1 (en) | 2016-06-08 | 2017-10-31 | Asm Ip Holding B.V. | Reaction chamber passivation and selective deposition of metallic films |
US11430656B2 (en) | 2016-11-29 | 2022-08-30 | Asm Ip Holding B.V. | Deposition of oxide thin films |
JP7169072B2 (ja) | 2017-02-14 | 2022-11-10 | エーエスエム アイピー ホールディング ビー.ブイ. | 選択的パッシベーションおよび選択的堆積 |
US11501965B2 (en) | 2017-05-05 | 2022-11-15 | Asm Ip Holding B.V. | Plasma enhanced deposition processes for controlled formation of metal oxide thin films |
WO2018213018A1 (en) | 2017-05-16 | 2018-11-22 | Asm Ip Holding B.V. | Selective peald of oxide on dielectric |
US10900120B2 (en) | 2017-07-14 | 2021-01-26 | Asm Ip Holding B.V. | Passivation against vapor deposition |
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JP2020119737A (ja) * | 2019-01-23 | 2020-08-06 | 大陽日酸株式会社 | 導電性ペースト、導電膜付き基材、導電膜付き基材の製造方法 |
US11965238B2 (en) | 2019-04-12 | 2024-04-23 | Asm Ip Holding B.V. | Selective deposition of metal oxides on metal surfaces |
US11139163B2 (en) | 2019-10-31 | 2021-10-05 | Asm Ip Holding B.V. | Selective deposition of SiOC thin films |
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008285761A (ja) * | 2002-11-12 | 2008-11-27 | Dowa Electronics Materials Co Ltd | 微粒子銅粉 |
TW201022152A (en) * | 2008-09-19 | 2010-06-16 | Asahi Glass Co Ltd | Conductive filler, conductive paste and article having conductive film |
JP2011253868A (ja) * | 2010-06-01 | 2011-12-15 | Hitachi Chem Co Ltd | p型拡散層形成組成物、並びに、太陽電池セルおよびその製造方法 |
CN102870167A (zh) * | 2010-01-25 | 2013-01-09 | 日立化成工业株式会社 | 电极用膏状组合物和光伏电池 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09218508A (ja) | 1996-02-08 | 1997-08-19 | Toray Ind Inc | 感光性ペースト |
EP1683592A4 (en) * | 2003-10-20 | 2010-11-10 | Harima Chemicals Inc | FINE METAL PARTICLES AND FINE METAL OXIDE PARTICLES AS DRY POWDER, AND USE THEREOF |
US7517382B2 (en) * | 2005-04-20 | 2009-04-14 | Gang Zhao | Production of fine particle copper powders |
US10231344B2 (en) | 2007-05-18 | 2019-03-12 | Applied Nanotech Holdings, Inc. | Metallic ink |
US20120009353A1 (en) * | 2008-01-31 | 2012-01-12 | Industrial Technology Research Institute | Method for manufacturing a substrate with surface structure by employing photothermal effect |
TWI401205B (zh) * | 2008-01-31 | 2013-07-11 | Ind Tech Res Inst | 利用光熱效應製作應用基板的方法 |
JP5820202B2 (ja) * | 2010-09-30 | 2015-11-24 | Dowaエレクトロニクス株式会社 | 導電性ペースト用銅粉およびその製造方法 |
KR101918323B1 (ko) * | 2011-05-18 | 2018-11-13 | 도다 고교 가부시끼가이샤 | 구리 분말, 구리 페이스트, 도전성 도막의 제조 방법 및 도전성 도막 |
JP5342603B2 (ja) * | 2011-05-23 | 2013-11-13 | 福田金属箔粉工業株式会社 | 焼成ペースト用銅微粒子および銅焼成膜の形成方法 |
JP2015133317A (ja) * | 2013-12-10 | 2015-07-23 | Dowaエレクトロニクス株式会社 | 導電性ペーストおよびそれを用いた導電膜の製造方法 |
-
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Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008285761A (ja) * | 2002-11-12 | 2008-11-27 | Dowa Electronics Materials Co Ltd | 微粒子銅粉 |
TW201022152A (en) * | 2008-09-19 | 2010-06-16 | Asahi Glass Co Ltd | Conductive filler, conductive paste and article having conductive film |
CN102870167A (zh) * | 2010-01-25 | 2013-01-09 | 日立化成工业株式会社 | 电极用膏状组合物和光伏电池 |
JP2011253868A (ja) * | 2010-06-01 | 2011-12-15 | Hitachi Chem Co Ltd | p型拡散層形成組成物、並びに、太陽電池セルおよびその製造方法 |
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